CN116626459A - Experimental method for time-lapse breakdown and total dose irradiation coupling effect of PDSOI device - Google Patents
Experimental method for time-lapse breakdown and total dose irradiation coupling effect of PDSOI device Download PDFInfo
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- CN116626459A CN116626459A CN202310327705.3A CN202310327705A CN116626459A CN 116626459 A CN116626459 A CN 116626459A CN 202310327705 A CN202310327705 A CN 202310327705A CN 116626459 A CN116626459 A CN 116626459A
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- 238000002474 experimental method Methods 0.000 title claims abstract description 73
- 230000015556 catabolic process Effects 0.000 title claims abstract description 61
- 230000001808 coupling effect Effects 0.000 title description 8
- 230000008878 coupling Effects 0.000 claims abstract description 15
- 238000010168 coupling process Methods 0.000 claims abstract description 15
- 238000005859 coupling reaction Methods 0.000 claims abstract description 15
- 238000012360 testing method Methods 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 15
- 238000012546 transfer Methods 0.000 claims description 13
- 230000005855 radiation Effects 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 11
- 230000036962 time dependent Effects 0.000 abstract description 5
- 238000006731 degradation reaction Methods 0.000 abstract description 3
- 239000000523 sample Substances 0.000 description 47
- 239000004065 semiconductor Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
- G01R31/2623—Circuits therefor for testing field effect transistors, i.e. FET's for measuring break-down voltage therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
- G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
- G01R31/1263—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
- G01R31/129—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation of components or parts made of semiconducting materials; of LV components or parts
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/30—Nuclear fission reactors
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- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention relates to a coupling experimental method for time breakdown and total dose irradiation of a PDSOI device, which comprises the following steps: s1: acquiring a PDSOI device as a sample to be measured, and dividing the sample to be measured into two groups; setting the experimental temperature as T1; s2: preheating a first group of samples to be tested, and performing a time-lapse breakdown experiment after the temperature reaches T1; s3: performing a total dose irradiation experiment on a second group of samples to be tested; s4: preheating a second group of samples to be tested after the total dose irradiation experiment is carried out, and carrying out a time-lapse breakdown experiment after the temperature reaches T1; s5: and classifying and analyzing the experimental data of the two groups of samples to be tested. According to the experimental method, the time-dependent breakdown effect and the total dose irradiation effect of the PDSOI are coupled, stress is applied to the device at a specific temperature, degradation data generated by sensitive parameters of the device after the two effects are coupled with each other at different environment temperatures are obtained, and condition setting in the experiment can be flexibly changed according to requirements.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to an experimental method for the coupling effect of time-lapse breakdown and total dose irradiation of a PDSOI device.
Background
Modern aerospace industry electronic equipment is developed towards high performance, long service life, high reliability and the like, so that new requirements are also put on the performance and reliability of bottom-layer switching devices in integrated circuits. Integrated circuits and electronic components will be subjected to varying degrees of multi-stress coupling in the earth's surface, the atmospheric altitude, and the space. If electronic equipment carried by an artificial earth satellite, a manned aircraft or a space detector and the like does not have enough comprehensive reliability, the sensitive parameters of the electronic equipment can have unexpected drifting under the action of multiple stresses such as electricity, irradiation and the like, so that soft errors and even irreversible permanent failures are caused. Meanwhile, compared with a bulk Silicon device, a Silicon-on-insulator (SOI) device eliminates latch-up effect, reduces soft error rate, parasitic capacitance and leakage current, and has simpler device isolation process and more convenient shallow junction manufacture. As device dimensions continue to shrink, the time-dependent breakdown effect of SOI devices remains an important reliability issue. And because of the presence of the buried oxide layer, the investigation into its total dose damage is much more complex than for a corresponding bulk silicon device. When both the time-dependent breakdown stress and the total dose irradiance stress are applied, the SOI device will experience a time-dependent breakdown and total dose irradiance coupling effect. SOI devices are classified into Fully Depleted Silicon On Insulator (FDSOI) and Partially Depleted Silicon On Insulator (PDSOI). For a PDSOI device, compared with an FDSOI device, the body contact can be realized relatively simply, and the back gate coupling effect is not obvious, so that the device has wide application in the space field.
Electronic devices operating in a space environment are subjected to coupling stresses that are not just single radiation stresses, but multiple stresses such as electrical stresses, temperature stresses, and irradiance stresses. The prior art can only obtain experimental data of single stress, and cannot simulate the coupling stress of a PDSOI device in a real working environment.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides an experimental method for the coupling effect of time-lapse breakdown and total dose irradiation of a PDSOI device. The technical problems to be solved by the invention are realized by the following technical scheme:
the embodiment of the invention provides an experimental method for the coupling effect of time-lapse breakdown and total dose irradiation of a PDSOI device, which comprises the following steps:
s1: acquiring a PDSOI device as a sample to be measured, and dividing the sample to be measured into two groups; setting the experimental temperature as T1;
s2: preheating a first group of samples to be tested, and performing a time-lapse breakdown experiment after the temperature reaches T1;
s3: performing a total dose irradiation experiment on a second group of samples to be tested;
s4: preheating a second group of samples to be tested after the total dose irradiation experiment is carried out, and carrying out a time-lapse breakdown experiment after the temperature reaches T1;
s5: and classifying and analyzing the experimental data of the two groups of samples to be tested.
In one embodiment of the present invention, the experimental method of the coupling effect of the time-lapse breakdown and the total dose irradiation of the PDSOI device further comprises:
s6: replacing T1 with T2, and repeating S1 to S4 for the new samples to be tested to obtain experimental data of two groups of new samples to be tested at the temperature of T2;
s7: experimental data at T2 temperature were classified and analyzed.
In one embodiment of the invention, the time-lapse breakdown test comprises:
s101: carrying out initial electrical property test on a sample to be tested;
s102: judging whether the sample to be tested fails according to the initial electrical characteristic test result, if so, replacing the sample to be tested and repeating S101-S102; if the sample is effective, collecting effective samples and recording experimental data;
s103: applying an over-time breakdown stress to the effective sample;
s104: performing sensitive parameter test on the effective sample after the time breakdown stress is applied;
s105: judging whether the sample fails according to the sensitive parameter test result, stopping the experiment on the failed sample, and finishing the test; and S103-S105, repeating the stress increasing time for the effective sample until the sample fails, and ending the experiment.
In one embodiment of the invention, the stress voltage, the device bias voltage, the stress failure determination condition and the stress time in the time-lapse breakdown experiment can be adjusted according to experimental requirements.
In one embodiment of the invention, the total dose irradiation experiment comprises the steps of:
s201: carrying out initial electrical property test on a sample to be tested;
s202: judging whether the sample to be tested fails according to the initial electrical characteristic test result, if so, replacing the sample to be tested and repeating S101-S102; if the sample is effective, collecting effective samples and recording experimental data;
s203: carrying out a total dose irradiation experiment on the effective sample by an irradiation source;
s204: and finishing the irradiation experiment when the irradiation dose reaches the set dose point.
In one embodiment of the invention, the irradiation dose may be adjusted according to experimental requirements.
In one embodiment of the invention, the initial electrical characteristic test is a scan of the transfer characteristic and a scan of the output characteristic over a normal operating voltage range.
In one embodiment of the present invention, the experimental data of the two groups of samples to be tested are classified according to the following classification criteria: the test data of the irradiation-free stress and the time-free breakdown stress, which are obtained after the step S2, of the first group of samples to be tested are obtained; and S3-S4, obtaining experimental data of irradiation stress and non-time-lapse breakdown stress of the second group of samples to be tested, and obtaining experimental data of irradiation stress and time-lapse breakdown stress.
In one embodiment of the invention, the total dose irradiation experiments use irradiation sources that are 60 Co-gamma radiation source with a dose rate of 200rad (Si)/s.
In one embodiment of the invention, the experimental temperature is 25-150 ℃.
Compared with the prior art, the invention has the beneficial effects that:
the experimental method of the invention couples the time-lapse breakdown effect and the total dose irradiation effect of the PDSOI, applies stress to the device at a specific temperature, can obtain degradation data generated by sensitive parameters of the device after the two effects are mutually coupled at different environmental temperatures, and can flexibly change the condition setting in the experiment according to the requirements.
Drawings
FIG. 1 is a schematic flow chart of a coupling experimental method of time-lapse breakdown and total dose irradiation of a PDSOI device of the present invention;
FIG. 2 is a flow chart of an experimental method of the present invention for breakdown over time;
FIG. 3 is a flow chart of a total dose irradiation experiment in the experimental method of the present invention;
FIG. 4 is a graph of transfer characteristics of a PDSOI device obtained experimentally in the experimental method of the present invention;
FIG. 5 is an initial transfer characteristic of a sample;
FIG. 6 is an extracted transconductance curve;
FIG. 7 is a schematic diagram of the connection of the cartridge, the heating device and B1500A.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but embodiments of the present invention are not limited thereto.
Example 1
Referring to fig. 1, a flow chart of a coupling experimental method of time-lapse breakdown and total dose irradiation of the PDSOI device of the present invention in fig. 1 includes:
s1: acquiring a PDSOI device as a sample to be measured, and dividing the sample to be measured into two groups; setting the experimental temperature as T1;
specifically, at least 15 samples per group were tested at a temperature of 25℃to 150 ℃.
S2: preheating a first group of samples to be tested, and performing a time-lapse breakdown experiment after the temperature reaches T1;
s3: performing a total dose irradiation experiment on a second group of samples to be tested;
s4: preheating a second group of samples to be tested after the total dose irradiation experiment is carried out, and carrying out a time-lapse breakdown experiment after the temperature reaches T1;
s5: and classifying and analyzing the experimental data of the two groups of samples to be tested.
Specifically, after S5, the method further includes:
s6: replacing T1 with T2, and repeating S1 to S4 for the new samples to be tested to obtain experimental data of two groups of new samples to be tested at the temperature of T2;
s7: experimental data at T2 temperature were classified and analyzed.
Specifically, the experimental data of the two groups of experimental samples are classified according to the following classification basis: the test data of the irradiation-free stress and the time-free breakdown stress, which are obtained after the step S2, of the first group of samples to be tested are obtained; and S3-S4, obtaining experimental data of irradiation stress and non-time-lapse breakdown stress of the second group of samples to be tested, and obtaining experimental data of irradiation stress and time-lapse breakdown stress. The experimental data includes transfer characteristic curves, output characteristic curves, threshold voltages, subthreshold slopes, transconductance curves, etc.
Referring to fig. 2, fig. 2 is a flow chart of an experimental method of the present invention for time-lapse breakdown experiments, including:
s101: carrying out initial electrical property test on a sample to be tested;
s102: judging whether the sample to be tested fails according to the initial electrical characteristic test result, if so, replacing the sample to be tested and repeating S101-S102; if the sample is effective, collecting effective samples and recording experimental data;
s103: applying an over-time breakdown stress to the effective sample;
s104: performing sensitive parameter test on the effective sample after the time breakdown stress is applied;
s105: judging whether the sample fails according to the sensitive parameter test result, stopping the experiment on the failed sample, and finishing the test; and S103-S105, repeating the stress increasing time for the effective sample until the sample fails, and ending the experiment.
Specifically, it is necessary to provide a continuous and stable voltage stress and a constant temperature for the test sample in the time-lapse breakdown test, and to ensure that the whole test process is not subjected to external mechanical vibration or electromagnetic interference. When the high-temperature experiment is carried out, the device needs to be preheated, so that the device is stabilized to the specified temperature and then tested. First, an initial electrical characteristic test is performed for a sample to be tested. The initial electrical characteristic test may be a sweep of the transfer characteristic and a sweep of the output characteristic over a normal operating voltage range. After confirming that the curve of the sample to be tested is normal, the sample can be judged to be used for experiments. When the B1500A semiconductor parameter analyzer is used for applying the breakdown stress with time, the stress voltage, the bias voltage of the device and the stress failure judging conditions are required to be set according to the specification parameters of the sample to be tested. During the stress application process, a certain time interval can be set to scan the transfer characteristic curve of the device. When the failure condition is reached, the computer automatically stops the experiment and saves the data. The stress time can be flexibly adjusted according to the requirement.
Specifically, the sample specification is the normal operating voltage of the sample and the breakdown voltage.
Referring to fig. 3, fig. 3 is a flowchart of a total dose irradiation experiment in the experimental method of the present invention, including:
s201: carrying out initial electrical property test on a sample to be tested;
s202: judging whether the sample to be tested fails according to the initial electrical characteristic test result, if so, replacing the sample to be tested and repeating S101-S102; if the sample is effective, collecting effective samples and recording experimental data;
s203: carrying out a total dose irradiation experiment on the effective sample by an irradiation source;
s204: and finishing the irradiation experiment when the irradiation dose reaches the set dose point.
Specifically, the total dose irradiation experiment requires an irradiation source, and the irradiation source used in the invention is 60 Co-gamma ray irradiation source. The dose rate was 200rad (Si)/s. The initial electrical property test of the sample is also required before the experiment starts, as is described by the time lapse breakdown experimental procedure. The radiation source is placed in a deep well before the irradiation experiment starts, the device to be tested is fixed on a special test circuit board and placed around the radiation source, and the device to be tested is connected to a power supply of a control room through a special long wire so as to provide stable bias voltage. Total dose measurementThe test points were 100krad (Si), 200krad (Si), 300krad (Si), 400krad (Si), 500krad (Si). The device was subjected to basic parameter and characteristic tests as each set dose point was reached. No temperature stress is applied during irradiation. To ensure the accuracy of the irradiation test, the test also uses a high-precision semiconductor parameter analyzer B1500A, and uses a computer programming test to extract the electrical parameters. The irradiation dose can be flexibly adjusted according to the requirements.
Referring to fig. 4, fig. 4 is a graph of transfer characteristics of a PDSOI device obtained by experiments in the experimental method of the present invention. The transfer characteristic curves of the PDSOI device in the process of time-lapse breakdown experiments before and after irradiation are shown in the figure. Key sensitive parameters of MOSFETs such as threshold voltage, subthreshold slope, transconductance curve and the like can be conveniently extracted. The experimental variables such as stress time, irradiation dose and the like can be flexibly adjusted according to requirements, and the experimental environment temperature must be consistent with the previous experiment.
Referring to fig. 5 and 6, fig. 5 is an initial transfer characteristic curve of a sample, and fig. 6 is an extracted transconductance curve. The maximum value point of the slope of the transfer characteristic curve is taken as a tangent, and the abscissa of the intersection point of the tangent and the x axis is obtained by subtracting 0.5 times V d Namely, threshold voltage; differentiating the transfer characteristic curve, wherein the whole differential curve is a transconductance curve; converting transfer characteristic curve to semi-logarithmic coordinate, deriving it, defining according to subthreshold slopeAnd (5) directly calculating.
Referring to fig. 7, fig. 7 is a schematic diagram illustrating a connection manner of the test cartridge, the heating device and the B1500A. The high temperature experiment is to put the device into a constant temperature box and then to perform the experiment when the temperature reaches the specified temperature. Since the B1500A semiconductor parameter analyzer is connected to the probe through the coaxial cable for current or voltage input/output, the probe and the coaxial cable are not resistant to high temperature, and damage may occur when the temperature reaches 70 ℃. The test of the die, typically via coaxial cable connection to the probes, can only be performed at room temperature. The method uses DIP24 to package the device, and uses a customized high temperature resistant test box and a high temperature resistant coaxial cable to carry out high temperature test. The device is connected with the high-temperature-resistant cable through an internal circuit of the test box, the high-temperature-resistant cable extends to the outside of the heating equipment through a connecting channel on the heating equipment, and the high-temperature-resistant cable is connected with a coaxial cable of the B1500A semiconductor parameter analyzer.
Under the experimental method of the embodiment, the time-dependent breakdown effect and the total dose irradiation effect of the PDSOI are coupled, stress is applied to the device at a specific temperature, degradation data generated by the sensitivity parameters of the device after the two effects are coupled with each other at different environment temperatures can be obtained, and the condition setting in the experiment can be flexibly changed according to requirements.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (10)
1. The experimental method for coupling the time breakdown and the total dose irradiation of the PDSOI device is characterized by comprising the following steps:
s1: acquiring a PDSOI device as a sample to be measured, and dividing the sample to be measured into two groups; setting the experimental temperature as T1;
s2: preheating a first group of samples to be tested, and performing a time-lapse breakdown experiment after the temperature reaches T1;
s3: performing a total dose irradiation experiment on a second group of samples to be tested;
s4: preheating a second group of samples to be tested after the total dose irradiation experiment is carried out, and carrying out a time-lapse breakdown experiment after the temperature reaches T1;
s5: and classifying and analyzing the experimental data of the two groups of samples to be tested.
2. The method of experimental coupling between time-lapse breakdown and total dose irradiation of a PDSOI device according to claim 1, further comprising the steps of:
s6: replacing T1 with T2, and repeating S1 to S4 for the new samples to be tested to obtain experimental data of two groups of new samples to be tested at the temperature of T2;
s7: experimental data at T2 temperature were classified and analyzed.
3. The method of experimental coupling of time-lapse breakdown and total dose irradiation of a PDSOI device according to claim 1, wherein the time-lapse breakdown experiment comprises the steps of:
s101: carrying out initial electrical property test on a sample to be tested;
s102: judging whether the sample to be tested fails according to the initial electrical characteristic test result, if so, replacing the sample to be tested and repeating S101-S102; if the sample is effective, collecting effective samples and recording experimental data;
s103: applying an over-time breakdown stress to the effective sample;
s104: performing sensitive parameter test on the effective sample after the time breakdown stress is applied;
s105: judging whether the sample fails according to the sensitive parameter test result, stopping the experiment on the failed sample, and finishing the test; and S103-S105, repeating the stress increasing time for the effective sample until the sample fails, and ending the experiment.
4. The method for coupling between time-lapse breakdown and total dose irradiation of a PDSOI device according to claim 1, wherein the stress voltage, the bias voltage, the stress failure determination condition and the stress time in the time-lapse breakdown experiment can be adjusted according to experimental requirements.
5. The method of coupling between time-lapse breakdown and total dose irradiation of a PDSOI device according to claim 1, wherein the total dose irradiation experiment comprises the steps of:
s201: carrying out initial electrical property test on a sample to be tested;
s202: judging whether the sample to be tested fails according to the initial electrical characteristic test result, if so, replacing the sample to be tested and repeating S101-S102; if the sample is effective, collecting effective samples and recording experimental data;
s203: carrying out a total dose irradiation experiment on the effective sample by an irradiation source;
s204: and finishing the irradiation experiment when the irradiation dose reaches the set dose point.
6. The method of claim 1, wherein the dose of radiation used in the total dose radiation experiment is adjustable according to the experimental requirements.
7. The method of experimental coupling between time lapse breakdown and total dose irradiation of a PDSOI device according to either of claims 3 or 4, wherein the initial electrical characteristic test is a scan of the transfer characteristic and a scan of the output characteristic in the normal operating voltage range.
8. The method for coupling between time-lapse breakdown and total dose irradiation of a PDSOI device according to claim 1, wherein the experimental data of the two groups of samples to be tested are classified according to the following criteria: the test data of the irradiation-free stress and the time-free breakdown stress, which are obtained after the step S2, of the first group of samples to be tested are obtained; and S3-S4, obtaining experimental data of irradiation stress and non-time-lapse breakdown stress of the second group of samples to be tested, and obtaining experimental data of irradiation stress and time-lapse breakdown stress.
9. The method for coupling between time-lapse breakdown and total dose irradiation of a PDSOI device according to claim 1, wherein the irradiation source used in the total dose irradiation experiment is 60 Co-gamma radiation source with a dose rate of 200rad (Si)/s.
10. The method of experimental coupling between time-lapse breakdown and total dose irradiation of a PDSOI device according to claim 1, wherein the experimental temperature is 25-150 ℃.
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