CN116606138A - Piezoelectric ceramic and preparation method and application thereof - Google Patents
Piezoelectric ceramic and preparation method and application thereof Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 144
- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- 238000005245 sintering Methods 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 38
- 239000002994 raw material Substances 0.000 claims abstract description 33
- 230000008569 process Effects 0.000 claims abstract description 29
- 238000000498 ball milling Methods 0.000 claims description 25
- 230000010287 polarization Effects 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
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- 238000004519 manufacturing process Methods 0.000 claims description 6
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- 230000032683 aging Effects 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000001680 brushing effect Effects 0.000 claims description 4
- 238000011056 performance test Methods 0.000 claims description 4
- 239000000835 fiber Substances 0.000 claims description 2
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- 238000004321 preservation Methods 0.000 abstract description 7
- 238000000280 densification Methods 0.000 abstract description 6
- 229910052783 alkali metal Inorganic materials 0.000 abstract description 4
- 230000008859 change Effects 0.000 abstract description 3
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- 229910052700 potassium Inorganic materials 0.000 abstract description 3
- 230000000087 stabilizing effect Effects 0.000 abstract description 3
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- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 3
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- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
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- FSAJRXGMUISOIW-UHFFFAOYSA-N bismuth sodium Chemical compound [Na].[Bi] FSAJRXGMUISOIW-UHFFFAOYSA-N 0.000 description 1
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- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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Abstract
A piezoelectric ceramic and a preparation method and application thereof relate to the field of piezoelectric ceramics. The method is different from the two-step sintering process of the traditional sintering process, and realizes the densification sintering of the lead-free piezoelectric ceramic by effectively controlling the change of the sintering temperature and the heat preservation time and the formula of raw materials; the piezoelectric ceramic preparation method provided by the application reduces volatilization of alkali metal elements such as K, na at high temperature, is favorable for stabilizing the stoichiometric ratio of a formula, reduces generation of mixed phases, and improves the density and the process stability of the ceramic; the piezoelectric ceramic has higher piezoelectric performance, density and mechanical performance, and is environment-friendly; the piezoelectric ceramic provided by the application has wide application prospect, can be applied to an optical fiber scanner in the laser display field and is configured as an actuating part, and the actuating part utilizes the inverse piezoelectric effect of the piezoelectric ceramic to control the optical fiber on the actuating part to perform vibration scanning, so that laser scanning imaging is realized.
Description
Technical Field
The application relates to the field of piezoelectric ceramics, in particular to a piezoelectric ceramic, a preparation method and application thereof.
Background
In recent years, piezoelectric ceramics have been widely used in fields such as machinery and electronics industry due to their excellent ferroelectric and piezoelectricity properties. The traditional lead zirconate titanate (PZT) base piezoelectric ceramic has excellent piezoelectric performance, and the device performance can be adjusted by doping modification to meet different requirements, so that the traditional lead zirconate titanate (PZT) base piezoelectric ceramic is the piezoelectric ceramic which is most widely used at present. However, the content of lead oxide in the lead-based piezoelectric ceramic material accounts for about 70% of the total amount of the raw materials, and serious harm is brought to human beings and ecological environment in the production, use and waste post-treatment processes. In recent years, the use of lead-containing electronic materials is prohibited by legislation in various countries in the world, such as the act of "restriction of harmful substances in electric and electronic devices" (WEEE) by the european meeting, the "household electronic product recovery act" passed in japan, and the "electronic information product pollution control management" issued by the information industry department of China in 2006, all strictly define the content of harmful substances such as lead in electronic devices. Therefore, the development of a novel environment-friendly lead-free piezoelectric ceramic material which can replace lead-based piezoelectric ceramics has become one of the development hot spots in the worldwide piezoelectric ceramic field.
Currently, lead-free piezoelectric ceramics can be mainly classified into three structures, namely, perovskite structure, tungsten bronze structure and bismuth layered structure. Among them, perovskite structure piezoelectric ceramics become the most widely studied lead-free piezoelectric ceramics at present due to the characteristics of excellent piezoelectric performance, compatibility of the preparation process and the traditional lead-based ceramic process, and the like. The common perovskite lead-free piezoelectric ceramic mainly comprises BT base and bismuth sodium titanate (Bi 0.5 Na 0.5 TiO 3 BNT) group and potassium sodium niobate (K) 0.5 Na 0.5 NbO 3 KNN) based, and the like. Wherein the BT piezoelectric ceramic has a lower Curie temperature (T C About 120 ℃ and the sintering temperature is high (about 1350 ℃), currently, more is applied to dielectric materials due to their high dielectric properties; BNT ceramics have limited further applications due to their large coercive field (Ec. Apprxeq.73 kV/cm) at room temperature, low depolarization temperature (about 100 ℃); whereas KNN-based lead-free piezoelectric ceramics are excellent in piezoelectric properties and Curie temperature (T C And 410 c) is considered to be the lead-free piezoelectric ceramic system most likely to replace PZT-based piezoelectric ceramics at present.
However, the existing KNN-based lead-free piezoelectric ceramic has the defect of low piezoelectric performance, low compactness and low material stability.
Disclosure of Invention
The application aims to provide piezoelectric ceramics which have higher piezoelectric performance, density and mechanical performance and are environment-friendly.
The application also aims to provide a preparation method of the piezoelectric ceramic, which has simple preparation process and low energy consumption, adopts a two-step sintering process which is different from the traditional sintering process, can realize densification and sintering of the piezoelectric ceramic by controlling the change of the sintering temperature and the heat preservation time, does not need complex sintering equipment such as hot-press sintering, plasma sintering and the like, can realize sintering and densification by using a common sintering furnace, reduces the equipment cost and is beneficial to industrial production; in addition, the preparation method of the piezoelectric ceramic reduces volatilization of alkali metal elements such as K, na and the like at high temperature, is favorable for stabilizing the stoichiometric ratio of the formula, reduces generation of mixed phases, and improves the density and the process stability of the ceramic.
Another object of the present application is to provide an application of piezoelectric ceramics, which is applied in the field of laser display technology, and which is configured as an actuator in a laser display device.
The application solves the technical problems by adopting the following technical scheme.
The application provides a preparation method of piezoelectric ceramics, which comprises the following steps:
and (3) batching: selecting raw materials according to chemical formula (0.96) [ K ] 0.48 Na 0.52 Nb 0.949 Li 0.001 Sb 0.05 O 3 ]-0.04[Bi 0.5 (K 0.15 Na 0.85 ) 0.5 Zr (x) Hf (1-x) O 3 ]Calculating and batching to obtain a first raw material; wherein x=0.05 to 0.35;
ball milling: ball milling is carried out on the first raw material to obtain a first sample;
presintering: the first sample is kept at 850-950 ℃ for 6-10 hours to obtain a second sample;
and (3) forming: performing molding processing on the second sample according to the target molding form to obtain a molded third sample;
and (3) glue discharging: maintaining the temperature of the third sample at 500-950 ℃ for glue discharging to obtain a fourth sample;
sintering: sintering the fourth sample to obtain a fifth sample;
silver electrode: brushing silver paste on the upper and lower surfaces of the fifth sample, and preserving heat at 500-900 ℃ for 10-40min to obtain a sixth sample;
high-voltage polarization: and (3) placing the sixth sample in a constant temperature environment of 20-90 ℃, and applying high pressure of 2-4kv for polarization, wherein the pressure maintaining time is 15-30min.
Optionally, in a preferred embodiment of the present application, the third sample is a piezoelectric ceramic plate;
the forming process of the piezoelectric ceramic piece comprises the following steps: and grinding the second sample, and then sequentially granulating and tabletting to obtain the third sample.
Preferably, in the preferred embodiment of the present application, a binder polyvinyl alcohol solution with a mass fraction of 5-12% is further added when granulating after grinding the second sample.
Further, in a preferred embodiment of the present application, the sintering process of the piezoelectric ceramic sheet includes: and (3) preserving the temperature of the fourth sample at 1100-1200 ℃ for 1-15min, cooling to 900-1060 ℃, and preserving the temperature for 3-25h to obtain a fifth sample.
Further, in the preferred embodiment of the present application, the cooling rate is 5-20 ℃/min during the cooling to 900-1060 ℃.
Optionally, in a preferred embodiment of the present application, x=0.05 to 0.25.
Optionally, in a preferred embodiment of the present application, x=0.15.
Further alternatively, in the preferred embodiment of the present application, when the ball milling process is performed on the first sample, absolute ethanol is added into the first sample, and then the ball milling process is performed, wherein the ball milling time is 8-24 hours, and the corresponding rotational speed of the ball mill is 150-500 rpm;
the preparation method of the piezoelectric ceramic further comprises the following steps: and aging the piezoelectric ceramic obtained after high-voltage polarization for 24 hours at normal temperature, and then performing performance test.
The application also provides piezoelectric ceramics, which are prepared according to the preparation method of the piezoelectric ceramics.
The application also provides application of the piezoelectric ceramic, which is applied to the technical field of display, wherein the technical field of display is the technical field of laser display;
the laser display technology includes a laser display device including a fiber scanner including an actuation portion, the piezoceramic being configured as the actuation portion.
The piezoelectric ceramic provided by the embodiment of the application and the preparation method and application thereof have the beneficial effects that: the preparation method of the piezoelectric ceramic provided by the embodiment of the application has the advantages that the preparation process is simple, the energy consumption is low, the adopted two-step sintering process is different from the traditional sintering process, the densification sintering of the piezoelectric ceramic can be realized by controlling the change of the sintering temperature and the heat preservation time, meanwhile, complicated sintering equipment such as hot press sintering, plasma sintering and the like is not needed, the sintering densification can be realized by using a common sintering furnace, the equipment cost is reduced, and the industrial production is facilitated; in addition, the piezoelectric ceramic preparation method provided by the embodiment of the application reduces volatilization of alkali metal elements such as K, na at high temperature, is favorable for stabilizing the stoichiometric ratio of the formula and reducing generation of mixed phases, thereby improving the density and the process stability of the ceramic; the piezoelectric ceramic provided by the application has higher piezoelectric performance, density and mechanical performance, and is environment-friendly; when the piezoelectric ceramic provided by the application is applied to the technical field of laser display, the piezoelectric ceramic can be configured as an actuator in a laser scanning device, has good piezoelectric driving performance and stability, and has good and wide application prospect.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is an XRD pattern of KNLS-BKNZxH (1-x) base piezoelectric ceramic provided by an embodiment of the application;
FIG. 2 is an SEM image of KNNLS-BKNZxH (1-x) based piezoelectric ceramic provided by an embodiment of the application;
FIG. 3 shows the piezoelectric property d of KNLS-BKNZxH (1-x) -based piezoelectric ceramic provided by the embodiment of the application 33 And Curie temperature T C ；
FIG. 4 is a graph showing the dielectric temperature curves of KNNLS-BKNZxH (1-x) piezoelectric ceramics according to the embodiment of the application, wherein, when X is 0.05, 0.15, 0.25 and 0.35, the graph in FIG. 4a, the graph in FIG. 4b, the graph in FIG. 4c and the graph in FIG. 4d respectively represent the dielectric temperature curves of the KNNLS-BKNZxH (1-x) piezoelectric ceramics;
FIG. 5 shows the dielectric loss and the dielectric constant of KNLS-BKNZxH (1-x) piezoelectric ceramic provided by the embodiment of the application;
FIG. 6 shows the mechanical quality factor and the electromechanical coupling coefficient of KNLS-BKNZxH (1-x) piezoelectric ceramic provided by the embodiment of the application.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below. The specific conditions are not noted in the examples and are carried out according to conventional conditions or conditions recommended by the manufacturer. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
The piezoelectric ceramic of the embodiment of the application, and the preparation method and application thereof are specifically described below.
The preparation method of the piezoelectric ceramic provided by the embodiment of the application comprises the following steps:
s1, proportioning: selecting corresponding raw materials according to element requirement, and further preparing the material according to chemical formula (0.96) [ K ] 0.48 Na 0.52 Nb 0.949 Li 0.001 Sb 0.05 O 3 ]-0.04[Bi 0.5 (K 0.15 Na 0.85 ) 0.5 Zr (x) Hf (1-x) O 3 ]Calculating and batching to obtain a first raw material; the term "Bi 0.5 (K 0.15 Na 0.85 ) 0.5 Zr (x) Hf (1-x) O 3 ]X in the constituent elements represents Zr 4+ The value of x is in the range of 0.05-0.35. It is emphasized that，[Bi 0.5 (K 0.15 Na 0.85 ) 0.5 Zr (x) Hf (1-x) O 3 ]The K element in the constituent elements is not necessarily the one of K element in other embodiments, but may be other alkali metal elements such as sodium and lithium.
It is further noted that in the examples of the present application, the chemical formula (0.96) [ K ] 0.48 Na 0.52 Nb 0.949 Li 0.001 Sb 0.05 O 3 ]-0.04[Bi 0.5 (K 0.15 Na 0.85 ) 0.5 Zr (x) Hf (1-x) O 3 ]In the calculation and batching, each element is greater than 99% pure with respect to the chosen raw material, and alternatively the raw material providing the K element may be K 2 CO 3 The raw material for providing Na element can be Na 2 CO 3 The raw material for providing Nb element can be Nb 2 O 5 The raw material for providing Li element can be Li 2 CO 3 The raw material for providing Sb element can be Sb 2 O 3 The raw material for providing Bi element may be Bi 2 O 3 The raw material for providing Zr element can be ZrO 2 The raw material for providing Hf element may be HfO 2 . It should be emphasized that, in other embodiments of the present application, the raw materials corresponding to each element are not limited to the raw materials provided in the embodiments of the present application, and may be other raw materials corresponding to each element, so long as they can provide the corresponding element for the first raw material.
Alternatively, in the preferred embodiment of the present application, x=0.05, 0.15, 0.25 and 0.35. In addition to x=0.05, 0.15, 0.25, and 0.35 in the embodiment of the present application, x may be any value between 0.05 and 0.35, such as 0.1, 0.2, 0.3, and the like in other embodiments of the present application. It should be emphasized that the preferred range of example x of the present application is 0.05 to 0.15, with a preferred point value of x of 0.15.
Further, in order to facilitate the explanation of the embodiment of the present application, the chemical formula of the raw material formula of the embodiment of the present application is (0.96) [ K ] 0.48 Na 0.52 Nb 0.949 Li 0.001 Sb 0.05 O 3 ]-0.04[Bi 0.5 (K 0.15 Na 0.85 ) 0.5 Zr (x) Hf (1-x) O 3 ]Can be abbreviated as KNNLS-BKNZxH (1-x). It is emphasized that by selecting the raw materials in terms of moles during the dosing process, the specific formulation of the first raw material is controlled from the elements and the corresponding proportions, i.e. Li is used first + 、Sb 5+ Partial substitution of elements (KNaNbO) 3 ) Nb of (b) 5+ Then, a new component BKNZH is added, so that the piezoelectric performance and the temperature stability of the ceramic are improved, the KNN-based piezoelectric ceramic is modified, and the KNNLS-BKNZxH (1-x) piezoelectric ceramic is formed, so that a good material structure foundation is provided for all excellent performances of the final piezoelectric ceramic.
S2, ball milling: ball milling is carried out on the first raw material to obtain a first sample. It should be noted that, by ball milling the first raw material, the powder dispersibility of the first raw material can be better, and the specific surface is larger, so as to facilitate the next step of presintering. It should be emphasized that in the preferred embodiment of the present application, preferably, when the ball milling process is performed on the first sample, absolute ethanol is added to the first sample to sufficiently dissolve and disperse the first raw material, and then the ball milling process is performed, the ball milling time is limited to 8-24 hours, and the rotational speed of the corresponding ball mill is limited to 150-500 rpm, so as to ensure the optimal ball milling effect.
S3, presintering: and (3) preserving the temperature of the first sample at 850-950 ℃ for 6-10h to obtain a second sample. It should be noted that, presintering is a heat treatment process for the first sample, and aims to improve the composition and microstructure of the first sample, so as to increase the subsequent processing efficiency and reduce the processing cost.
S4, forming: and carrying out molding processing on the second sample according to the target molding form to obtain a molded third sample.
Optionally, in a preferred embodiment of the present application, the third sample is a piezoelectric ceramic sheet, i.e. the target molding form is a sheet. Specifically, the forming process of the piezoelectric ceramic sheet includes: and grinding the second sample, and then sequentially granulating and tabletting to obtain a third sample. The second sample was ground and then granulated, and a binder polyvinyl alcohol solution was added in an amount of 5 to 12% by mass. Granulation and tabletting can be facilitated by the addition of binders. And in other embodiments of the application, the binder is not limited to polyvinyl alcohol solution, but may be other binders.
It should be further noted that the form of the piezoelectric ceramic provided in the embodiment of the present application is not just one of the piezoelectric ceramic sheets described above, but may be another target forming form, such as a piezoelectric ceramic tube (tubular shape).
S5, glue discharging: and (3) preserving the temperature of the third sample at 500-950 ℃ for glue discharging to obtain a fourth sample. The purpose of the adhesive removal is to remove various additives during molding, such as the binder polyvinyl alcohol, after molding.
S6, sintering: sintering the fourth sample to obtain a fifth sample. Specifically, when the piezoelectric ceramic sheet is formed, the sintering process of the piezoelectric ceramic sheet includes: and (3) preserving the temperature of the fourth sample at 1100-1200 ℃ for 1-15min, cooling to 900-1060 ℃, and preserving the temperature for 3-25h to obtain a fifth sample. Wherein, in the process of cooling to 900-1060 ℃, the cooling speed is 5-20 ℃/min.
The S6 sintering process is an important step of sintering the fourth sample into ceramic, and the heat preservation parameter and the cooling parameter are both important indexes in the sintering process, so that the essential attribute of the fifth sample as ceramic is determined. In order to optimize and control the good performance of the fifth sample as the piezoelectric ceramic, the embodiment of the application only needs to be limited in the process of cooling to 900-1060 ℃ when sintering, wherein the cooling speed is 5-20 ℃/min (the cooling speed can inhibit the grain boundary migration after a communicated framework is formed among grains in the ceramic microstructure, and the ceramic sample is fully dense by utilizing the grain boundary diffusion effect).
It is further emphasized that the two-step sintering method provided in the embodiment of the present application has a better advantage over the conventional solid phase method, in particular, for the conventional solid phase method sintering, since a long-time heat preservation at a high temperature is required, pores and grain boundaries can move together, and as a result, grains grow gradually, and pores shrink gradually, thereby improving the density, but in the later stage of sintering, due to the bridging effect between grain boundaries, the migration rate of the pores is reduced, even a fixed-binding phenomenon occurs, and at this time, the pores leave the grain boundaries and are enclosed in the grains, resulting in lengthening of diffusion path of a substance, reducing diffusion rate, and making further shrinkage and elimination of the pores almost impossible. In this case, further sintering is difficult to improve the density of the ceramic, and conversely, the grain size is continuously increased, even the abnormal growth phenomenon of a few grains occurs, so that the residual small pores are more packed into the deep of the large grains, which is disadvantageous to the performance and use of the ceramic. The two-step sintering of the novel process provided by the embodiment of the application does not need high-temperature long-time heat preservation, the abnormal growth phenomenon of crystal grains can be eliminated, and particularly, the subcritical unstable state of pores in the ceramic can be realized for the first-step sintering of the two-step sintering, so that important basic conditions are provided for the subsequent second-step low-temperature sintering. However, for the second sintering at low temperature, the ceramic particles are frozen, the grain boundary forms a 'bridging' structure, the migration of pores is limited, and the migration of grain boundary is also limited, and under the condition of long-time heat preservation, the activation energy of grain boundary diffusion is smaller than that of grain boundary migration, so that the grain boundary diffusion becomes a main mechanism of ceramic densification and plays an important role in obtaining grains with uniform size.
S7, silver electrode: brushing silver paste on the upper and lower surfaces of the fifth sample, and preserving heat at 500-900 ℃ for 10-40min to obtain a sixth sample. It should be noted that, in other embodiments of the present application, the electrode may be silver coated by sintering, chemical deposition and vacuum coating of the silver layer.
S8, high-voltage polarization: and (3) placing the sixth sample in a constant temperature environment of 20-90 ℃, and applying high pressure of 2-4kv for polarization, wherein the pressure maintaining time is 15-30min. The piezoelectric performance of the ceramic is maximized by orienting the internal electrical domains of the ceramic by high-voltage polarization.
Further, the preparation method of the piezoelectric ceramic provided by the embodiment of the application further comprises an aging test, namely: the piezoelectric ceramic obtained after high-voltage polarization is aged for 24 hours at normal temperature, and then performance test is carried out (various indexes are detected after aging stabilization to see whether the expected performance requirement is met).
It should be emphasized that, in the method for preparing a piezoelectric ceramic according to the embodiment of the present application, any parameter value related to the parameter range may be any point value corresponding to the parameter range, and is not limited to the point value or the preferred value given in the embodiment, for example, in the ball milling process, the ball milling time is limited to 8-24h, the rotational speed of the corresponding ball mill is limited to 150-500 rpm, the ball milling time may be any time (for example, 8.5 hours, 9 hours or 10 hours, etc.) in the 8-24h interval, the rotational speed of the ball mill is any rotational speed (for example, 160 rpm, 182 rpm, 265 rpm, etc.) in the parameter interval, and therefore, in the embodiment of the present application, the point value in the parameter interval cannot be listed one by one, so that the corresponding parameter range substantially represents each point value of the parameter interval range, and the parameter adjustment is not fully exemplified in the embodiment of the present application.
The application also provides piezoelectric ceramics, which are prepared by the preparation method of the piezoelectric ceramics provided by the embodiment of the application. The piezoelectric ceramic provided by the embodiment of the application has higher piezoelectric property, density and mechanical property, and is environment-friendly.
The application also provides application of the piezoelectric ceramic, and the piezoelectric ceramic is applied to the technical field of display. Optionally, the display technology field is a laser display technology field. The laser display technology includes a laser display device, the laser display device includes an optical fiber scanner, the optical fiber scanner includes an actuating portion, the piezoelectric ceramic is configured as the actuating portion, and the actuating portion controls the optical fiber on the actuating portion to perform vibration scanning by using the inverse piezoelectric effect of the piezoelectric ceramic, so as to realize laser scanning imaging. It should be noted that, the application of the piezoelectric ceramic provided by the embodiment of the present application is not limited to the actuating portion provided by the embodiment of the present application and may be applied to components configured in other fields, such as an atomization sheet, in other embodiments of the present application, so long as the piezoelectric effect or the inverse piezoelectric effect of the piezoelectric ceramic provided by the embodiment of the present application may be utilized.
The features and capabilities of the present application are described in further detail below in connection with the examples.
Example 1
The embodiment provides a preparation method of piezoelectric ceramics, which comprises the following specific preparation processes:
1. and (3) batching: formula (0.96) [ K ] according to the application, according to the selected starting materials and molar mass 0.48 Na 0.52 Nb 0.949 Li 0.001 Sb 0.05 O 3 ]-0.04[Bi 0.5 (K 0.15 Na 0.85 ) 0.5 Zr (x) Hf (1-x) O 3 ]Calculating and batching to obtain a first raw material; wherein x represents Zr 4+ X=0.05.
2. Ball milling: ball milling is carried out on the first raw material to obtain a first sample. Specifically, the prepared first raw material is put into a ball milling tank filled with ball milling beads, absolute ethyl alcohol is added, and the mixture is transferred to a ball mill for ball milling for 8-24 hours at a rotating speed of 150-500 rpm.
3. Presintering: transferring the first sample into a muffle furnace, and preserving heat for 6-10h at 850-950 ℃ to obtain a second sample.
4. Granulating and tabletting; the second sample was placed in a mortar, finely ground, granulated with a binder PVA solution (5-12 wt%), poured into a die having a diameter of 10-15mm, and tabletted with a powder tablet press under a pressure of 10-20MPa to obtain a third sample.
5. And (3) glue discharging: transferring the third sample into a glue discharging furnace, and preserving heat at 500-950 ℃ to discharge glue to obtain a fourth sample.
6. Sintering: sintering the fourth sample by adopting a two-step sintering method to obtain a fifth sample; specifically, the sintering temperature in the first step is 1100-1200 ℃, the temperature is kept for 1-15min, then the temperature is quickly reduced to 900-1060 ℃, and the temperature is kept for 3-25h.
7. Silver electrode: brushing silver paste on the upper and lower surfaces of the fifth sample obtained after sintering, and then preserving heat at 500-900 ℃ for 10-40min to obtain a sixth sample;
8. high-voltage polarization: and (3) placing the sixth sample in a constant-temperature silicone oil bath at 20-90 ℃, and applying high pressure of 2-4kv for polarization, wherein the pressure maintaining time is 15-30min. It should be noted that, after aging for 24 hours at normal temperature after polarization, electrical performance test can be performed.
The embodiment also provides a piezoelectric ceramic, which is prepared by the preparation method of the piezoelectric ceramic provided by the embodiment.
The embodiment also provides application of the piezoelectric ceramic, which is applied to the technical field of laser display. Specifically, the laser display technology includes a laser display device, the laser display device includes an optical fiber scanner, the optical fiber scanner includes an actuating portion, and the actuating portion is made of the piezoelectric ceramics provided in the present embodiment. The actuator controls the optical fiber on the actuator to perform vibration scanning by the principle of inverse piezoelectric effect of piezoelectric ceramics.
Example 2
The piezoelectric ceramic provided in this example is substantially the same as that provided in example 1 in that the formulation ratio of the formulation used in the preparation process is different from that of example 1, and the formulation ratio of Zr in the preparation process is different from that of example 1 4+ The molar quantity x of (2) is 0.15.
Example 3
The piezoelectric ceramic provided in this example is substantially the same as that provided in example 1 in that the formulation ratio of the formulation used in the preparation process is different from that of example 1, and the formulation ratio of Zr in the preparation process is different from that of example 1 4+ The molar mass x of (2) is 0.25.
Example 4
The piezoelectric ceramic provided in this example is substantially the same as that provided in example 1 in that the formulation ratio of the formulation used in the preparation process is different from that of example 1, and the formulation ratio of Zr in the preparation process is different from that of example 1 4+ The molar weight x of (2) was 0.35.
Further, in order to verify and explain the technical effects of the piezoelectric ceramic and the preparation and the application thereof provided by the embodiment of the application, the application is described by explaining part of the samples of the embodiment provided by the application, in particular:
referring to FIG. 1, FIG. 1 shows the XRD pattern of the KNNLS-BKNZxH (1-x) based leadless piezoelectric ceramic according to the embodiment of the application, as shown in FIG. 1, the KNNLS-BKNZxH (1-x) leadless piezoelectric ceramic has a single perovskite structure, which indicates that the addition of the new component BKNZxH (1-x) leads the ceramic to have a stable solid solution, when x=0.05 and 0.15, the KNNLS-BKNZxH (1-x) piezoelectric ceramic has an R-T multiphase coexisting crystal structure, when x is>At 0.15, the phase structure of KNNLS-BKNZxH (1-x) piezoelectric ceramic changes, the double peak changes into single peak, and the single peak mainly shows a three-phase structure, which indicates Zr 4+ /Hf + Has great influence on the phase structure of the KNNLS-BKNZxH (1-x) leadless piezoelectric ceramic, and has optimal piezoelectric performance when the KNNLS-BKNZxH (1-x) ceramic has an R-T multiphase coexisting crystal structure (x=0.05 and 0.15).
Further, fig. 2 is an SEM image of a KNNLS-BKNZxH (1-x) based leadless piezoelectric ceramic provided in an embodiment of the present application, from which it is known that the KNNLS-BKNZxH (1-x) piezoelectric ceramic has a dense crystal structure mainly composed of large grains of 20-30 μm and small grains filled in gaps of the large grains when x=0.05 and 0.15>At 0.15, the large grains gradually decrease, which indicates that with Zr 4+ /Hf + Is increased by surplus Zr 4+ Gradually precipitate on the grain boundary, and inhibit the growth of grains.
Further, FIG. 3 shows the piezoelectric property d of the KNNLS-BKNZxH (1-x) -based leadless piezoelectric ceramic provided by the embodiment of the application 33 And Curie temperature T C From the data in the figures, it is clear that the KNNLS-BKNZxH (1-x) piezoelectric ceramic has the best piezoelectric performance (d 33 =570±10pc/N) and a higher curie temperature (T C =216℃), which is consistent with the analytical results of XRD and SEM.
Further, fig. 4 is a graph showing a dielectric constant (1000 hz) and a dielectric loss of the KNNLS-BKNZxH (1-x) piezoelectric ceramic provided by the embodiment of the application, that is, fig. 5 is a dielectric loss and a dielectric constant of the KNNLS-BKNZxH (1-x) piezoelectric ceramic provided by the embodiment of the application, and it is known that when x=0.15, the piezoelectric ceramic has a higher dielectric constant 3352 and a lower dielectric loss 0.0286.
Further, fig. 6 shows the mechanical quality factor and the electromechanical coupling coefficient of the KNNLS-BKNZxH (1-x) piezoelectric ceramic provided by the embodiment of the application, and when x=0.15, the KNNLS-BKNZxH (1-x) piezoelectric ceramic has the best mechanical properties, that is qm=31 and kp=0.63, which are consistent with the XRD, SEM and piezoelectric properties/dielectric properties results described above.
In summary, the piezoelectric ceramic preparation method provided by the embodiment of the application utilizes a two-step sintering method different from the traditional sintering method, and prepares the KNLS-BKNZxH (1-x) piezoelectric ceramic by adding the second component, wherein the ceramic has an R-T multiphase coexisting crystal structure at normal temperature, and has higher density and excellent piezoelectric performance and mechanical performance: d, d 33 ＝570±10pC/N，T C ＝216℃，tanδ＝0.0286，ε γ =3352, qm=31, kp=0.63, which is comparable to PZT piezoelectric ceramics, so that it can be judged that the lead-free piezoelectric ceramics of the system has a better research prospect.
The embodiments described above are some, but not all embodiments of the application. The detailed description of the embodiments of the application is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Claims (10)
1. The preparation method of the piezoelectric ceramic is characterized by comprising the following steps of:
and (3) batching: selecting raw materials according to chemical formula (0.96) [ K ] 0.48 Na 0.52 Nb 0.949 Li 0.001 Sb 0.05 O 3 ]-0.04[Bi 0.5 (K 0.15 Na 0.85 ) 0.5 Zr (x) Hf (1-x) O 3 ]Calculating and batching to obtain a first raw material;wherein x=0.05 to 0.35;
ball milling: ball milling is carried out on the first raw material to obtain a first sample;
presintering: the first sample is kept at 850-950 ℃ for 6-10 hours to obtain a second sample;
and (3) forming: performing molding processing on the second sample according to the target molding form to obtain a molded third sample;
and (3) glue discharging: maintaining the temperature of the third sample at 500-950 ℃ for glue discharging to obtain a fourth sample;
sintering: sintering the fourth sample to obtain a fifth sample;
silver electrode: brushing silver paste on the upper and lower surfaces of the fifth sample, and preserving heat at 500-900 ℃ for 10-40min to obtain a sixth sample;
high-voltage polarization: and (3) placing the sixth sample in a constant temperature environment of 20-90 ℃, and applying high pressure of 2-4kv for polarization, wherein the pressure maintaining time is 15-30min.
2. The method for producing a piezoelectric ceramic according to claim 1, wherein the third sample is a piezoelectric ceramic sheet;
the forming process of the piezoelectric ceramic piece comprises the following steps: and grinding the second sample, and then sequentially granulating and tabletting to obtain the third sample.
3. The method for producing a piezoelectric ceramic according to claim 2, wherein a binder polyvinyl alcohol solution having a mass fraction of 5 to 12% is further added when granulating after grinding the second sample.
4. The method of manufacturing a piezoelectric ceramic according to claim 2, wherein the sintering process of the piezoelectric ceramic sheet includes: and (3) preserving the temperature of the fourth sample at 1100-1200 ℃ for 1-15min, cooling to 900-1060 ℃, and preserving the temperature for 3-25h to obtain a fifth sample.
5. The method according to claim 4, wherein the temperature reduction rate is 5-20 ℃/min during the temperature reduction to 900-1060 ℃.
6. The method of producing a piezoelectric ceramic according to any one of claims 1 to 5, wherein x=0.05 to 0.25.
7. The method of manufacturing a piezoelectric ceramic according to claim 6, wherein x=0.15.
8. The method for preparing piezoelectric ceramics according to claim 1, wherein when the first sample is subjected to ball milling treatment, absolute ethyl alcohol is added into the first sample and then ball milling treatment is performed, wherein the ball milling time is 8-24 hours, and the rotating speed of the corresponding ball mill is 150-500 revolutions per minute;
the preparation method of the piezoelectric ceramic further comprises the following steps: and aging the piezoelectric ceramic obtained after high-voltage polarization for 24 hours at normal temperature, and then performing performance test.
9. A piezoelectric ceramic, characterized in that the piezoelectric ceramic is produced by the production method of the piezoelectric ceramic according to claims 1 to 8.
10. The use of the piezoelectric ceramic according to claim 9, wherein the piezoelectric ceramic is applied to the field of display technology, the field of display technology being the field of laser display technology;
the laser display technology includes a laser display device including a fiber scanner including an actuation portion, the piezoceramic being configured as the actuation portion.
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