CN116598403A

CN116598403A - Semiconductor assembly

Info

Publication number: CN116598403A
Application number: CN202310089678.0A
Authority: CN
Inventors: 简妙珊; 梁凯杰; 郑伟德; 邱国铭
Original assignee: Lite On Technology Corp
Current assignee: Lite On Technology Corp
Priority date: 2022-02-14
Filing date: 2023-02-08
Publication date: 2023-08-15
Also published as: CN219735040U; CN219759608U

Abstract

The invention provides a semiconductor component. The semiconductor component is provided with a substrate, a retaining wall, a light-emitting unit and a reflecting glue layer. The substrate has a bearing surface. The retaining wall is arranged on the bearing surface and provided with an inner side surface, and the inner side surface and the bearing surface define a containing space. The light-emitting unit is arranged in the accommodating space and is borne on the bearing surface, and the light-emitting unit is provided with an upper light-emitting surface and a side light-emitting surface. The reflecting glue layer is arranged in the accommodating space and is positioned between the inner side surface and the side luminous surface. The reflective adhesive layer comprises a base resin, an ultraviolet light absorber and light reflective particles. The reflecting glue layer can prevent the silicon-oxygen resin in the reflecting glue layer from being damaged by a mechanism of physical reflection and chemical absorption, thereby achieving the effect of improving the reliability of the semiconductor component.

Description

Semiconductor assembly

Technical Field

The present invention relates to a semiconductor device, and more particularly, to a semiconductor device with high reliability.

Background

The LED has the advantages of low power consumption, long service life and good light emitting effect. By selecting different semiconductor materials, the light emitting diode can also generate light rays with different wavelengths. Accordingly, light emitting devices manufactured by light emitting diodes have gradually replaced various light sources on the market.

The materials and the metal electrode in the light-emitting diode are easy to oxidize due to external moisture and oxygen. Therefore, silicone resin is generally used as a packaging adhesive to encapsulate the light emitting diode, so as to prevent moisture and oxygen from contacting the light emitting diode.

The silicon-oxygen bonds (bond energy 193.5 kcal/mol) in the silicone resin have a higher bonding energy than the carbon-carbon bonds (bond energy 145 kcal/mol) in the organic material. However, silicone resins may still undergo bond breakage for extended periods of time in high temperature or high energy (e.g., ultraviolet light) operating environments. Once the bond is broken, the light transmittance of the silicone resin is reduced, and the light emitting effect of the light emitting component is further reduced. To specifically evaluate the reliability of the light emitting device, operation tests (Wet High Temperature Operating Life, WHTOL) can be performed under different operating power conditions in a high temperature and high humidity environment.

Fig. 11 shows a conventional semiconductor device using a single silicone resin 80 as the encapsulation compound. In the semiconductor device, the silicone 80 completely encapsulates the light emitting diode 90 and forms a dome-shaped package structure. However, the semiconductor device shown in fig. 11 cannot pass the reliability test of WHTOL (withstand time of 500 hours) and is subject to the phenomena of gel cracking and luminance decay under the operating environment with 90% relative humidity and 60 ℃.

Therefore, how to improve the reliability of the semiconductor device by improving the structure or the material has become a direction of research in the art, so as to realize the operation with high power in the working environment with high temperature and high humidity and maintain a certain light emitting effect.

Disclosure of Invention

The invention aims to solve the technical problem of providing a semiconductor component aiming at the defects of the prior art.

In order to solve the above technical problems, one of the technical solutions adopted in the present invention is to provide a semiconductor device. The semiconductor component comprises a substrate, a retaining wall, a light-emitting unit and a reflecting glue layer. The substrate has a bearing surface. The retaining wall is arranged on the bearing surface and provided with an inner side surface, and the inner side surface and the bearing surface define a containing space. The light-emitting unit is arranged in the accommodating space and is borne on the bearing surface, and the light-emitting unit is provided with an upper light-emitting surface and a side light-emitting surface. The reflecting glue layer is arranged in the accommodating space and is positioned between the inner side surface and the side luminous surface. The reflective adhesive layer comprises a base resin, an ultraviolet light absorber and light reflective particles.

In order to solve the above-mentioned problems, another technical solution adopted by the present invention is to provide a semiconductor device. The semiconductor component comprises a substrate, a light-emitting unit, a nano-chip, a first reflecting glue layer and a light-transmitting glue layer. The substrate has a bearing surface. The light-emitting unit is arranged on the bearing surface and is provided with an upper light-emitting surface and a side light-emitting surface. The zener chip is arranged on the bearing surface. The first reflecting glue layer coats the Zener chip, and the material of the first reflecting glue layer comprises a first silicon-based resin, an ultraviolet light absorber and light reflecting particles. The light-transmitting glue layer is used for coating the light-emitting unit, the Zener chip and the first reflecting glue layer, and the material of the light-transmitting glue layer comprises fluorine resin.

In order to solve the above-mentioned problems, another aspect of the present invention is to provide a semiconductor device. The semiconductor component comprises a substrate, a light-emitting unit, a nano-chip, a first reflecting glue layer and a light-transmitting glue layer. The substrate is provided with a bearing surface, the bearing surface is provided with a central area and a peripheral area, and the peripheral area surrounds the central area. The light-emitting unit is arranged in the central area and is provided with an upper light-emitting surface and a side light-emitting surface. The zener chip is disposed in the peripheral region. The first reflecting glue layer coats the Zener chip, and the material of the first reflecting glue layer comprises a first silicon-based resin, an ultraviolet light absorber and light reflecting particles. The light-transmitting adhesive layer is arranged in the central area and covers the upper light-emitting surface and the side light-emitting surface, and the material of the light-transmitting adhesive layer comprises fluorine resin.

In order to solve the above-mentioned problems, another aspect of the present invention is to provide a semiconductor device. The semiconductor component comprises a substrate, a light-emitting unit, a nano-chip, a first reflecting glue layer and a light-transmitting glue layer. The substrate is provided with a bearing surface, the bearing surface is provided with a central area and a peripheral area, and the peripheral area surrounds the central area. The light-emitting unit is arranged in the central area and is provided with an upper light-emitting surface and a side light-emitting surface. The zener chip is disposed in the central region. The first reflecting glue layer coats the Zener chip, and the material of the first reflecting glue layer comprises a first silicon-based resin, an ultraviolet light absorber and light reflecting particles. The transparent glue layer is arranged in the central area and covers the light-emitting unit, the Zener chip and the first reflecting glue layer, and the transparent glue layer is made of fluorine resin.

For a further understanding of the nature and the technical aspects of the present invention, reference should be made to the following detailed description of the invention and the accompanying drawings, which are provided for purposes of reference only and are not intended to limit the invention.

Drawings

Fig. 1 is a schematic cross-sectional view of a semiconductor device according to a first embodiment of the present invention.

Fig. 2 is a schematic cross-sectional view of a semiconductor device according to a second embodiment of the present invention.

Fig. 3 is a schematic cross-sectional view of a semiconductor device according to a third embodiment of the present invention.

Fig. 4 is a schematic cross-sectional view of a semiconductor device according to a fourth embodiment of the present invention.

Fig. 5 is a schematic cross-sectional view of a semiconductor device according to a fifth embodiment of the present invention.

Fig. 6 is a schematic cross-sectional view of a semiconductor device according to a sixth embodiment of the present invention.

Fig. 7 is a schematic cross-sectional view of a semiconductor device according to a seventh embodiment of the present invention.

Fig. 8 is a schematic cross-sectional view of a semiconductor device according to an eighth embodiment of the present invention.

Fig. 9 is a schematic cross-sectional view of a semiconductor device according to a ninth embodiment of the present invention.

Fig. 10 is a schematic cross-sectional view of a semiconductor device according to a tenth embodiment of the present invention.

Fig. 11 is a schematic side view of a prior art semiconductor device.

Detailed Description

The following is a description of embodiments of the disclosed "semiconductor device" by way of specific examples.

In order to solve the problem of insufficient reliability of the existing light-emitting component, the invention provides a semiconductor component. The semiconductor component is provided with the reflecting glue layer, and the reflecting glue layer surrounds the periphery of the light-emitting unit but does not completely cover the light-emitting unit. The reflecting glue layer can prevent the silicon-oxygen resin in the reflecting glue layer from being damaged by a mechanism of physical reflection and chemical absorption, thereby achieving the effect of improving the reliability of the semiconductor component and simultaneously ensuring a certain light emitting effect.

Referring to fig. 1, the semiconductor device of the present invention includes: a substrate 10, a retaining wall 20, a light emitting unit 30 and a reflective adhesive layer 40.

The substrate 10 has a carrying surface 11. The substrate 10 has a circuit structure 12 thereon, and the circuit structure 12 can electrically connect the light emitting unit 30 with an external circuit. For example, the substrate 10 may be an aluminum nitride substrate or an aluminum oxide substrate, but the invention is not limited thereto.

The retaining wall 20 is disposed on the carrying surface 11 and has an inner side 21. The bearing surface 11 and the inner side surface 21 define a containing space. In an exemplary embodiment, the inner surface 21 may be a roughened surface, and the roughened surface may increase the reflection effect of the retaining wall 20, thereby improving the light emitting effect of the semiconductor device. In embodiments, not shown in part, the base plate 10 and the retaining wall 20 may be integrally formed.

The light emitting unit 30 is disposed in the accommodating space and is carried on the carrying surface 11. As shown in fig. 1, the light emitting unit 30 is fixed on the carrying surface 11 through the die bond 15. The die bond 15 may be silver paste, gold solder paste or solder paste. The light emitting unit 30 has an upper light emitting surface 31 and side light emitting surfaces 32. The upper light emitting surface 31 is interconnected with the side light emitting surface 32, the upper light emitting surface 31 being located on the side of the light emitting unit 30 facing away from the carrying surface 11.

The light emitting unit 30 may include one or more light emitting diode chips. And, the kind of the light emitting diode chip may be, but not limited to, a horizontal light emitting diode chip, a vertical light emitting diode chip, or a flip-chip light emitting diode chip.

In an exemplary embodiment, the light emitting unit 30 may generate light with ultraviolet wavelength, that is, the light emitting unit 30 may include an ultraviolet light emitting diode or a light emitting diode capable of generating ultraviolet light through wavelength conversion.

In an exemplary embodiment, a protection layer 33 (shown in fig. 2) may be optionally covered around the light emitting unit 30. That is, the protective layer 33 is formed on the upper light emitting surface 31 and the side light emitting surface 32 of the light emitting unit 30. The material of the protection layer 33 is a transparent colloid, and the protection layer 33 can prevent the light emitting unit 30 from contacting with external moisture.

The reflective adhesive layer 40 is disposed in the accommodating space and located between the inner side surface 21 and the side light emitting surface 32. The reflective adhesive layer 40 surrounds the light emitting unit 30 and contacts the side light emitting surface 32, but the reflective adhesive layer 40 does not cover the upper light emitting surface 31. That is, the reflective adhesive layer does not cover the light emitting unit 30, and the height of the reflective adhesive layer 40 on the side adjacent to the side light emitting surface 32 is lower than the height of the upper light emitting surface 31 with respect to the carrying surface 11.

In an exemplary embodiment, the reflective adhesive layer 40 forms a concave surface (concave surface) 41 (shown in fig. 1) between the retaining wall 20 and the light emitting unit 30. That is, the height of the reflective adhesive layer 40 on the side adjacent to the side light emitting surface 32 is lower than the height on the side adjacent to the inner side 21 with respect to the carrying surface 11. In this way, the reflection effect of the reflective adhesive layer 40 on the light can be improved, and the reflected ultraviolet light can be prevented from entering the adhesive again, so as to improve the reliability of the semiconductor device.

In another embodiment, the reflective adhesive layer 40 may also form a concave curved surface (concave surface) between the retaining wall 20 and the light emitting unit 30. That is, the height of the reflective adhesive layer 40 on the side adjacent to the side light emitting surface 32 may be higher than the height on the side adjacent to the inner side 21 with respect to the carrying surface 11. However, the present invention is not limited thereto.

The reflective adhesive layer 40 is a transparent adhesive layer for light to pass through. When the thickness H1 of the reflective adhesive layer 40 is too thick, the light emitting effect of the semiconductor device is adversely affected, and thus the thickness H1 of the reflective adhesive layer 40 needs to be less than 300 μm. In addition, in order to achieve the effect of reflecting and absorbing ultraviolet light, the thickness H1 of the reflective adhesive layer 40 is greater than 50 micrometers. In the present specification, the thickness H1 of the reflective adhesive layer 40 refers to a thickness of the reflective adhesive layer 40 formed on a side adjacent to the side light emitting surface 32 with respect to the carrying surface 11.

And, the reflective adhesive layer 40 has a function of reflecting and absorbing ultraviolet light. The reflective adhesive layer 40 includes a base resin, an ultraviolet light absorber, and a light reflective particle.

The base resin is a silicone resin, specifically, the base resin may be a silicone resin having a methyl group, and a thermosetting silicone resin may be selected according to the need. For example, the base resin may be methyl silica gel, methyl phenyl vinyl silica gel, or a combination thereof.

The ultraviolet light absorber absorbs ultraviolet light (particularly UVA having a wavelength of 250 nm to 400 nm) and converts light energy of the ultraviolet light into heat energy. The ultraviolet light absorber can prevent the bond breakage of the base resin due to the irradiation of light through a mechanism of chemical absorption.

The light reflective particles can improve the reflectivity of light, and through a physical reflection mechanism, the light reflective particles can prevent the base resin from breaking bonds due to irradiation of the light. The particle size of the light reflective particles is 0.2 to 20 microns. If the particle size of the light reflection particles is too large, the sizing materials are easy to mix unevenly, so that the reflection effect is poor. If the particle size of the light reflecting particles is too small, the light reflecting particles are likely to settle and accumulate at the bottom, resulting in a decrease in the reflection effect at the bottom of the reflecting glue layer 40. The light reflective particles may be, for example, polytetrafluoroethylene particles or zirconium dioxide particles. However, the present invention is not limited thereto.

In an exemplary embodiment, the ultraviolet light absorber is contained in an amount of 0.1 to 15 parts by weight based on 100 parts by weight of the total weight of the base resin. If the content of the ultraviolet light absorber is too high, the ultraviolet light absorber absorbs too much light, resulting in a decrease in brightness of the semiconductor device. In addition, the solvent of the ultraviolet light absorber reacts with the silicone resin, so that the silicone resin is not easy to cure. If the content of the ultraviolet light absorber is too low, ultraviolet light may deteriorate the silicon-based resin, thereby adversely affecting the reliability of the semiconductor device.

In an exemplary embodiment, the content of the light reflecting particles is 5 to 75 parts by weight, preferably 25 to 50 parts by weight, based on 100 parts by weight of the total weight of the base resin. If the content of the light reflection particles is too high, the viscosity of the sizing material is also increased, so that the problem of difficult dispensing is generated. If the content of the light reflection particles is too low, the light emitting effect of the semiconductor component cannot be effectively improved.

In addition to the base resin, the ultraviolet light absorber, and the light reflective particles, the reflective paste layer 40 may further include a hindered amine light stabilizer (hindered amine light stabilizer, HALS). The hindered amine light stabilizer has the effect of repairing broken bonds, so that broken bonds of the base resin due to irradiation of light can be prevented.

In an exemplary embodiment, the hindered amine light stabilizer is present in an amount of 0.1 to 15 parts by weight based on 100 parts by weight of the total weight of the base resin. If the content of the hindered amine light stabilizer is too high, the solvent of the hindered amine light stabilizer reacts with the silicone resin, so that the silicone resin is not easily cured. If the content of the ultraviolet light absorber is too low, the reliability of the semiconductor device cannot be improved.

First embodiment

Referring to fig. 1, a semiconductor device according to a first embodiment of the present invention includes: the light emitting device comprises a substrate 10, a retaining wall 20, a light emitting unit 30 and a reflecting glue layer 40.

The substrate 10 is an aluminum nitride substrate. The retaining wall 20, the light emitting unit 30 and the reflective adhesive layer 40 are disposed on the supporting surface 11 of the substrate 10, the retaining wall 20 surrounds the light emitting unit 30, and the reflective adhesive layer 40 is formed between the retaining wall 20 and the light emitting unit 30.

In detail, the reflective adhesive layer 40 contacts the inner side 21 of the retaining wall 20 and the side light emitting surface 32 of the light emitting unit 30, but does not cover the upper light emitting surface 31. The height of the reflective glue layer 40 on the side adjacent to the side light emitting surface 32 is lower than or equal to the height of the upper light emitting surface 31 with respect to the carrying surface 11.

The reflective glue layer 40 has a concave surface 41 on the side facing away from the bearing surface 11. The height of the reflective glue layer 40 on the side adjacent to the side light emitting surface 32 is lower than the height of the upper light emitting surface 31 with respect to the carrying surface 11. Therefore, the reflection effect and the reliability of the semiconductor component on light can be improved.

The light emitting unit 30 is disposed on the circuit structure 12 through the die bond 15 and is electrically connected to the circuit structure 12. The circuit structure 12 is embedded and arranged on the substrate 10, and is partially exposed from the carrying surface 11 of the substrate 10 and the other surface opposite to the carrying surface 11. In this way, the light emitting unit 30 can be electrically connected to an external circuit through the circuit structure 12, so as to achieve the effect of supplying power to the semiconductor device.

In order to confirm that the semiconductor device of the present invention has high reliability, semiconductor devices of experimental examples 1 to 2 and comparative examples 1 to 5 were prepared according to the structure of the semiconductor device in the first embodiment, and the light emitting effect test and the reliability test were performed on the semiconductor devices of experimental examples 1 to 2 and comparative examples 1 to 5, and the results are shown in table 1.

In the light emitting effect test, the semiconductor device was supplied with 0.3 w of power to generate light, and the light emitting intensity of the semiconductor device in comparative example 1 was defined as 100%, so as to facilitate evaluation of the correlation between the light emitting intensity and the reliability.

In the reliability test, the reliability of the semiconductor device was evaluated by normal temperature lighting (temperature: 25 ℃) and wet lighting (temperature: 60 ℃, humidity: 90%). After 500 hours of normal temperature lighting and warm and humid lighting, if the structural integrity can be maintained and the brightness is attenuated to be less than 30% of the initial brightness, the structure is represented by 'qualification', and if the structure has the problem of damage or peeling, or the brightness attenuation is greater than or equal to 30% of the initial brightness, the structure is represented by 'disqualification'.

Experimental examples 1 to 2 are different from comparative examples 1 to 5 in that: the composition in the reflective glue layer 40 is different. Specifically, the reflective adhesive layers 40 of the experimental examples 1 to 2 include a base resin, an ultraviolet light absorber, and light reflective particles, and the reflective adhesive layer 40 of the experimental example 2 further includes a hindered amine light stabilizer. The ultraviolet light absorber and the light reflective particles were not added simultaneously to the reflective adhesive layers 40 of comparative examples 1 to 5. The specific components of the reflective adhesive layer 40 in experimental examples 1 to 2 and comparative examples 1 to 5 are listed in table 1. In experimental examples 1 to 2 and comparative examples 1 to 5, the light reflective particles were polytetrafluoroethylene particles (Teflon), the ultraviolet light absorber was 2- (2, 4-dihydroxyphenyl) -4, 6-bis (2, 4-dimethyl-phenyl) -1,3, 5-triazine, and the hindered amine light stabilizer was bis (2, 6-tetramethyl-1- (octyloxy) -4-piperidinyl) ester. The thickness H1 of the reflective adhesive layer 40 is 200 micrometers to 300 micrometers.

If the thickness H1 of the reflective adhesive layer 40 is too thick, the reflective effect is rather reduced. In addition, more uv light is reflected to the light-transmitting layer (the first light-transmitting layer or the second light-transmitting layer), and the light-transmitting layer is cracked. If the thickness H1 of the reflective adhesive layer 40 is too thin, the reflective effect is similar to that of the transparent layer, and the effect of improving the reliability of the semiconductor device cannot be achieved.

TABLE 1

As can be seen from the results of Table 1, the reflective adhesive layer 40 includes the base resin, the ultraviolet light absorber and the light reflective particles, which can improve the reliability of the semiconductor device and maintain a certain light emitting effect.

Specifically, the semiconductor device of example 1 passed the 1500 hour reliability test when it was lighted at a power of less than 40 mW. The semiconductor device of example 2 passed the 2000-hour reliability test when it was lighted at a power of less than 40 mW. The semiconductor device of comparative example 1 failed the 168 hour reliability test when it was lighted at a power of less than 40 milliwatts. The semiconductor device in comparative example 2 passed the reliability test for 500 hours when it was light-emitting at a power of less than 40 mW, but the light-emitting effect was poor, and only 61% of the light-emitting effect of the semiconductor device in comparative example 1 was achieved. The semiconductor device in comparative example 3 causes a key-breaking problem when light is emitted at a power of less than 10 milliwatts. The semiconductor device of comparative example 4 passed the 500-hour reliability test when it was lighted at a power of less than 20 mW. The semiconductor device of comparative example 5 failed the 168 hour reliability test when supplied with 40 milliwatts of power.

In order to confirm the tolerance of the semiconductor device of the present invention under severe temperature conditions, semiconductor devices of experimental examples 2, 3 were prepared according to the structure of the semiconductor device in the first embodiment. The semiconductor devices of examples 2 and 3 were subjected to thermal shock test (thermal shock), and the results are shown in Table 2.

In experimental examples 2 and 3, the light reflective particles, the ultraviolet light absorber and the hindered amine light stabilizer are the same as those described above, and thus, the description thereof will not be repeated. The base resin used in experimental example 2 was a silicon-based resin having a low hardness (hardness after curing is Shore a 52), and the base resin used in experimental example 3 was a silicon-based resin having a high hardness (hardness after curing is Shore D35).

The specific components of the reflective adhesive layer 40 in experimental examples 2 and 3 are shown in table 2. The thickness H1 of the reflective adhesive layer 40 is 200 micrometers to 300 micrometers.

In the temperature impact test, the temperature was varied at a rate of 40 ℃ per minute in a temperature range of-40 ℃ to 125 ℃ to evaluate the endurance of the semiconductor component under severe temperature conditions. After 1000 cycles of temperature change, the structural integrity is maintained, and is indicated as "acceptable" if the structure is stripped or destroyed, and is indicated as "unacceptable".

TABLE 2

From the results of table 2, it can be seen that the semiconductor device of the present invention has good tolerance under severe temperature conditions. Specifically, the semiconductor devices of examples 2 and 3 maintained structural integrity after 1000 cycles of temperature change.

Second embodiment

Referring to fig. 2, a semiconductor device according to a second embodiment of the present invention is similar to the semiconductor device (fig. 1) of the first embodiment, and includes: the light emitting device comprises a substrate 10, a retaining wall 20, a light emitting unit 30 and a reflecting glue layer 40. The second embodiment differs from the first embodiment in that: the light emitting unit 30 is covered with a protective layer 33.

The protective layer 33 is formed on the upper light emitting surface 31 and the side light emitting surface 32 of the light emitting unit 30 to achieve the effect of protecting the light emitting unit 30. In addition, the protection layer 33 may also prevent the light emitting unit 30 from being in contact with external moisture. The protective layer 33 includes a transparent silica gel (e.g., fluorine-based resin).

Third embodiment

Referring to fig. 3, a semiconductor device according to a third embodiment of the present invention is similar to the semiconductor device (fig. 1) of the first embodiment, and includes: the light emitting device comprises a substrate 10, a retaining wall 20, a light emitting unit 30 and a reflecting glue layer 40. The third embodiment differs from the first embodiment in that: the semiconductor device further includes a first light transmissive adhesive layer 50.

The first transparent adhesive layer 50 is disposed on the supporting surface 11 and located between the substrate 10 and the reflective adhesive layer 40. The first transparent adhesive layer 50 can allow ultraviolet light to pass through and absorb a little of the ultraviolet light. The thickness H2 of the first transparent adhesive layer 50 on the side adjacent to the side light emitting surface 32 is 50 micrometers to 100 micrometers with respect to the carrying surface 11.

The first transparent adhesive layer 50 includes a first base resin and an ultraviolet light absorber. The ultraviolet light absorber is contained in an amount of 0.1 to 2 parts by weight based on 100 parts by weight of the total weight of the first base resin. The first base resin is a silicone resin, specifically, the first base resin may be a silicone resin having a methyl group, and a thermosetting silicone resin may be selected according to the requirement.

In an exemplary embodiment, the first transparent adhesive layer 50 may further include a hindered amine light stabilizer. The addition of the hindered amine light stabilizer can further enhance the ultraviolet light absorption effect of the first light transmissive adhesive layer 50. The content of the hindered amine light stabilizer is 0.1 to 15 parts by weight based on 100 parts by weight of the total weight of the first base resin.

In order to confirm that the semiconductor device of the present invention has high reliability, the semiconductor device of experimental example 5 was prepared according to the structure of the semiconductor device of the third embodiment, and the semiconductor device of experimental example 5 was subjected to a light emitting effect test and a reliability test, and the results are shown in table 3. The data of experimental example 1 are also presented in table 3 for comparison. In the light emission effect test, the light emission intensity of the semiconductor device in comparative example 1 was defined as 100% for comparison.

In experimental example 5, the light reflective particles, the ultraviolet light absorber and the hindered amine light stabilizer are the same as those described above, and thus, the description thereof will be omitted. The specific components of the reflective adhesive layer 40 and the first transparent adhesive layer 50 in experimental example 5 are shown in table 3. The thickness H1 of the reflective adhesive layer 40 is 200 micrometers to 300 micrometers, and the thickness H2 of the first light-transmitting adhesive layer 50 is 5 to 150 micrometers. If the thickness H2 of the first transparent adhesive layer 50 is too thick, the ultraviolet light is easily absorbed, resulting in a reduced light emitting effect of the semiconductor device. If the thickness H2 of the first transparent adhesive layer 50 is too thin, the process is not easy to be performed, and it is difficult to control the quality of the semiconductor device.

TABLE 3 Table 3

As can be seen from the results of Table 3, the reflective adhesive layer 40 and the first transparent adhesive layer 50 can improve the reliability of the semiconductor device and maintain a certain light emitting effect. Specifically, the semiconductor device of example 5 passed the 500-hour reliability test when it was lighted at a power of less than 40 mW.

Fourth embodiment

Referring to fig. 4, fig. 4 is a scanning electron microscope image of a semiconductor device according to a fourth embodiment of the invention. The semiconductor device of the fourth embodiment of the present invention is similar to the semiconductor device of the third embodiment (fig. 3), and includes: the light emitting device comprises a substrate 10, a retaining wall 20, a light emitting unit 30, a reflecting glue layer 40 and a first light transmitting glue layer 50. The fourth embodiment differs from the third embodiment in that: the semiconductor device further includes a second light transmissive adhesive layer 60.

The second transparent adhesive layer 60 is disposed on the carrying surface 11 and located between the substrate 10 and the first transparent adhesive layer 50. The second light transmissive adhesive layer 60 absorbs most of the ultraviolet light. The thickness H3 of the second transparent adhesive layer 60 on the side adjacent to the side light emitting surface 32 is 70 micrometers to 150 micrometers with respect to the carrying surface 11.

The second transparent adhesive layer 60 includes a second base resin and an ultraviolet light absorber. And, the concentration of the ultraviolet light absorber in the second light-transmitting glue layer 60 is higher than that in the first light-transmitting glue layer 50. The ultraviolet light absorber is contained in an amount of 5 to 15 parts by weight based on 100 parts by weight of the total weight of the second base resin. The second base resin is a silicone resin, specifically, the second base resin may be a silicone resin having a methyl group, and a thermosetting silicone resin may be selected according to the requirement. The ultraviolet light absorber can absorb ultraviolet light (especially UVA with the wavelength of 250-400 nanometers), and can prevent the second base resin from being broken by the irradiation of light through a chemical absorption mechanism.

In order to confirm that the semiconductor device of the present invention has high reliability, the semiconductor devices of examples 6 and 7 were prepared according to the structure of the semiconductor device of the fourth embodiment, and the light emitting effect test and the reliability test were performed on the semiconductor devices of examples 6 and 7, and the results are shown in table 4. The data of examples 1 and 5 are also shown in Table 4 for comparison. In the light emission effect test, the light emission intensity of the semiconductor device in comparative example 1 was defined as 100% for comparison.

In experimental examples 6 and 7, the light reflective particles, the ultraviolet light absorber and the hindered amine light stabilizer are the same as those described above, and thus, the description thereof will not be repeated. The specific compositions of the reflective adhesive layer 40, the first light-transmitting adhesive layer 50 and the second light-transmitting adhesive layer 60 in experimental examples 6 and 7 are shown in table 4. The thickness H1 of the reflective adhesive layer 40 is 200 micrometers to 300 micrometers, the thickness H2 of the first light-transmitting adhesive layer 50 is 100 micrometers to 200 micrometers, and the thickness H3 of the second light-transmitting adhesive layer 60 is less than 100 micrometers. If the thickness H3 of the second transparent adhesive layer 60 is too thick, the space where the reflective adhesive layer 40 can be disposed is compressed, and the overall light emitting effect of the semiconductor device is reduced. If the thickness H3 of the second transparent adhesive layer 60 is too thin, the reliability of the semiconductor device cannot be effectively improved.

TABLE 4 Table 4

As can be seen from the results of Table 4, the arrangement of the reflective adhesive layer 40, the first transparent adhesive layer 50 and the second transparent adhesive layer 60 can improve the reliability of the semiconductor device and maintain a certain light emitting effect. Specifically, the semiconductor device of example 6 passed the 1000-hour reliability test when it was lighted at a power of less than 40 mW. The semiconductor device of example 7 passed the 1500 hour reliability test when it was illuminated at a power of less than 40 milliwatts.

Passive components, such as zener chips, are also often mounted in semiconductor devices. A typical passive component absorbs light emitted from the light emitting unit. The present invention also provides a solution for covering or shielding the passive component with the reflective colloid to reduce the light absorption effect of the passive component, and the solution is described in detail below with reference to the fifth to tenth embodiments.

Fifth embodiment

Referring to fig. 5, a semiconductor device according to a fifth embodiment of the present invention includes: the light emitting device comprises a substrate 10, a light emitting unit 30, a zener chip 70, a first reflective adhesive layer 80 and a light transmitting adhesive layer 90.

The carrying surface 11 of the substrate 10 is provided with a circuit structure 12, and the circuit structure 12 is embedded and arranged on the substrate 10 and is partially exposed from the carrying surface 11 of the substrate 10 and the other surface opposite to the carrying surface 11.

The light emitting unit 30 is disposed on the circuit structure 12 through the die bond 15 and is electrically connected to the circuit structure 12. The die bond 15 may be silver paste, gold solder paste or solder paste. In this way, the light emitting unit 30 can be electrically connected to an external circuit through the circuit structure 12, so as to achieve the effect of supplying power to the semiconductor device.

The carrying surface 11 of the base plate 10 is provided with an outer limit member 14. In an exemplary embodiment, the outer limiting member 14 is looped around the bearing surface 11 to form a region 110. In this way, the light-transmitting adhesive layer 90 can be formed only in the region 110 due to the limitation of the outer limiting member 14.

The outer limiting member 14 may be made of metal or plastic. For example, the outer limiting member 14 may be made of metal such as copper or gold, or may be made of glue such as epoxy or silicone. When the outer limit member 14 is a metal material, it may be formed by electroplating, and when the outer limit member 14 is a plastic material, it may be formed by molding or other means. However, the invention is not limited thereto.

In an exemplary embodiment, the outer limit 14 has a diameter of 3 mm to 3.5 mm. Preferably, the outer limit 14 has a diameter of 3.2 mm to 3.25 mm. The height of the outer limiting member 14 is preferably higher than the light emitting layer of the light emitting unit 30, and also higher than the height of the zener chip 70.

The light emitting unit 30 is disposed on the carrying surface 11 and is located in the region 110. The structure of the light emitting unit 30 is as described in the first embodiment, and will not be described herein.

The zener chip 70 is disposed on the carrying surface 11 and is located in the region 110. The zener chip 70 can prevent the light emitting unit 30 from being broken down by reverse current. Therefore, the zener chip 70 can protect circuits and components.

The first reflective adhesive layer 80 encapsulates the zener chip 70 and forms a dome-shaped surface on the carrying surface 11. The first layer of reflective glue 80 is located in the circular area 110. The first reflective adhesive layer 80 can reduce the light absorption effect of the zener chip 70, and can also be used to protect the zener chip 70 from being peeled off or damaged from the substrate 10 during the baking or molding process. Accordingly, the arrangement of the first reflective adhesive layer 80 can enhance the reliability of the semiconductor device.

For this purpose, the first reflective adhesive layer 80 includes a first silicon-based resin, an ultraviolet light absorber, and light reflective particles.

Specifically, the first silicon-based resin may be a silicon-based resin having a methyl group, and a thermosetting silicon-based resin may be selected according to the requirement. For example, the first silicon-based resin may be methyl silica gel, methyl phenyl vinyl silica gel, or a combination thereof. The ultraviolet light absorber and the light reflective particles are as described above and will not be described again.

In an exemplary embodiment, the ultraviolet light absorber is contained in the first reflective adhesive layer 80 in an amount of 0.1 to 2 parts by weight based on 100 parts by weight of the total weight of the first silicon-based resin. For example: 0.2, 0.4, 0.6, 0.8, 1.0, 1.2, 1.4, 1.6 or 1.8 parts by weight.

In an exemplary embodiment, the content of the light reflective particles in the first reflective adhesive layer 80 is 5 to 75 parts by weight based on 100 parts by weight of the total weight of the first silicon-based resin. For example: 15 parts by weight, 25 parts by weight, 35 parts by weight, 45 parts by weight, 55 parts by weight or 65 parts by weight.

The first reflective glue layer 80 may further include a hindered amine light stabilizer in addition to the first silicon-based resin, the ultraviolet light absorber, and the light reflective particles.

In an exemplary embodiment, the content of the hindered amine light stabilizer in the first reflective adhesive layer 80 is 0.1 to 15 parts by weight based on 100 parts by weight of the total weight of the first silicon-based resin. For example: 3 parts by weight, 6 parts by weight, 9 parts by weight or 12 parts by weight.

The thickness H4 of the first reflective adhesive layer 80 may be 150 micrometers to 200 micrometers with respect to the carrying surface 11. For example, the thickness H4 of the first reflective adhesive layer 80 may be 160 microns, 170 microns, 180 microns, or 190 microns.

The light-transmitting adhesive layer 90 is disposed on the carrying surface 11 and located in the region 110. The light-transmitting glue layer 90 encapsulates the light-emitting unit 30, the zener chip 70 and the first reflective glue layer 80, and forms a dome-shaped surface on the carrying surface 11. The transparent adhesive layer 90 can protect the light emitting unit 30 and the zener chip 70, thereby improving the reliability of the semiconductor device. The light-transmitting adhesive layer 90 includes a fluorine-based resin (fluorine). The thickness H4 of the first reflective adhesive layer 80 is 150 to 200 micrometers with respect to the carrying surface 11. If the thickness H4 of the first reflective adhesive layer 80 is too thick, the space where the transparent adhesive layer 90 can be disposed is compressed, and the overall light emitting effect of the semiconductor device is reduced. If the thickness H4 of the first reflective adhesive layer 80 is too thin, the zener chip 70 cannot be effectively protected, and the reliability of the semiconductor device cannot be effectively improved.

The thickness H5 of the light transmissive adhesive layer 90 may be 500 micrometers to 850 micrometers. For example, the thickness H5 of the light transmissive adhesive layer 90 may be 550 microns, 600 microns, 650 microns, 700 microns, 750 microns, or 800 microns.

Sixth embodiment

Referring to fig. 6, a semiconductor device according to a sixth embodiment of the present invention is similar to the semiconductor device (fig. 5) according to the fifth embodiment, and includes: the light emitting device comprises a substrate 10, a light emitting unit 30, a zener chip 70, a first reflective adhesive layer 80 and a light transmitting adhesive layer 90. The difference between the sixth embodiment and the fifth embodiment is that: a reflective layer 34 is provided around the light emitting unit 30.

The reflective layer 34 is disposed on the side light emitting surface 32 of the light emitting unit 30 to concentrate the light generated by the light emitting unit 30 and achieve the effect of protecting the light emitting unit 30. In addition, the reflective layer 34 may also prevent the light emitting unit 30 from being in contact with external moisture. The reflective layer 34 includes a transparent silica gel and light reflective particles (e.g., silicone and polytetrafluoroethylene particles).

In order to confirm that the semiconductor device of the present invention has high reliability, semiconductor devices of experimental examples 8 and 9 were prepared according to the structures of the semiconductor devices of the fifth and sixth embodiments, respectively. Further, according to the semiconductor device shown in fig. 11, a semiconductor device of comparative example 6 was prepared.

Comparative example 6 differs from experimental examples 8 and 9 in that: the semiconductor device of comparative example 6 did not have the first reflective adhesive layer 80. That is, the zener chip 70 is not covered by the first reflective adhesive layer 80.

In experimental examples 8 and 9, the light reflective particles, the ultraviolet light absorber and the hindered amine light stabilizer are the same as those described above, and thus, the description thereof will not be repeated. The specific composition of the first reflective adhesive layer 80 in experimental examples 8 and 9 is shown in table 5. The material of the light-transmitting glue layer 90 in the experimental examples 8 and 9 and the comparative example 6 was fluorine resin. The semiconductor devices of examples 8 and 9 and comparative example 6 were subjected to a light emission effect test and a reliability test, and the results are shown in table 5. In the light emission effect test, the light emission intensity of the semiconductor device in comparative example 6 was defined as 100% for comparison.

TABLE 5

As can be seen from the results of Table 5, the first reflective adhesive layer 80 encapsulates the Zener chip 70, thereby improving the reliability of the semiconductor device and maintaining a certain light emitting effect. The reflective layer 34 is formed around the light emitting unit 30, so that the effect of protecting the light emitting unit 30 can be achieved, and the light emitting effect and reliability of the semiconductor device can be improved.

Seventh embodiment

Referring to fig. 7, a semiconductor device according to a seventh embodiment of the present invention is similar to the semiconductor device (fig. 5) of the fifth embodiment, and includes: the light emitting device comprises a substrate 10, a light emitting unit 30, a zener chip 70, a first reflective adhesive layer 80 and a light transmitting adhesive layer 90.

The seventh embodiment differs from the fifth embodiment in that: the base plate 10 is provided with an inner limiting member 13 to divide the circular region 110 into a central region 111 and a peripheral region 112. The light-transmitting glue layer 90 is located in the central area 111, and the light-transmitting glue layer 90 only covers the light-emitting unit 30, but does not cover the zener chip 70 and the first reflective glue layer 80.

The bearing surface 11 of the substrate 10 is provided with an inner limiter 13 and an outer limiter 14. The inner limiting member 13 and the outer limiting member 14 are respectively wound on the bearing surface 11 to form a region. The inner limiting member 13 is surrounded by the outer limiting member 14, and the inner limiting member 13 and the outer limiting member 14 are concentrically arranged.

By the arrangement of the inner limiting member 13, the region 110 can be divided into a central region 111 and a peripheral region 112. That is, the inner stopper 13 surrounds the central region 111 and separates the central region 111 from the peripheral region 112.

For example, the inner limiting member 13 surrounds the bearing surface 11 to form a region, i.e. a central region 111. The outer limiting member 14 surrounds the inner limiting member 13, so that an annular region, i.e., a peripheral region 112, is formed between the inner limiting member 13 and the outer limiting member 14. That is, the peripheral region 112 surrounds the central region 111 and is partitioned by the inner stopper 13.

In an exemplary embodiment, the ratio of the diameter of the inner limiting member 13 to the diameter of the outer limiting member 14 is 1:1.75 to 1:2. however, the invention is not limited thereto.

In an exemplary embodiment, the diameter of the inner limiting member 13 is 1.5 mm to 2.0 mm. Preferably, the diameter of the inner limiting member 13 is 1.7 mm to 1.9 mm. The outer limit 14 has a diameter of 3 mm to 3.5 mm. Preferably, the outer limit 14 has a diameter of 3.2 mm to 3.25 mm. However, the invention is not limited thereto.

The height of the inner limiting member 13 and the outer limiting member 14 is preferably higher than the position of the light emitting layer of the light emitting unit 30. In an exemplary embodiment, the height of the inner limiting member 13 may be 50 micrometers to 100 micrometers. The height of the outer limit 14 may be 150 microns to 200 microns. However, the invention is not limited thereto.

In an exemplary embodiment, the width of the inner limiting member 13 may be 100 micrometers to 150 micrometers. The width of the outer limit 14 may be 100 microns to 250 microns. However, the invention is not limited thereto.

The inner limiting member 13 may be made of metal or plastic. In some embodiments, the inner limiting member 13 is made of metal, and the outer limiting member 14 is made of plastic. In some embodiments, the inner limiting member 13 is made of plastic, and the outer limiting member 14 is made of metal. In other embodiments, the inner limiting member 13 and the outer limiting member 14 are both made of plastic. However, the invention is not limited thereto.

Eighth embodiment

Referring to fig. 8, a semiconductor device according to an eighth embodiment of the present invention is similar to the semiconductor device (fig. 7) according to the seventh embodiment, and includes: the substrate 10, the light emitting unit 30, the zener chip 70, a second reflective adhesive layer 80' and the light-transmitting adhesive layer 90.

The eighth embodiment differs from the seventh embodiment in that: the zener chip 70 is covered by the second reflective adhesive layer 80', and the second reflective adhesive layer 80' completely covers the peripheral region 112.

In the eighth embodiment, the second reflective adhesive layer 80' is disposed between the inner limiting member 13 and the outer limiting member 14 (the peripheral region 112), and forms a concave surface (as shown in fig. 8) on the carrying surface 11. The second reflective adhesive layer 80' has a lower height adjacent to the inner limiting member 13 than the outer limiting member 14 with respect to the supporting surface 11.

In another embodiment, the second reflective adhesive layer 80' may form a concave curved surface (concave surface) between the inner limiting member 13 and the outer limiting member 14 (peripheral region 112). That is, the second reflective adhesive layer 80' may have a higher height on the side adjacent to the inner limiting member 13 than on the side adjacent to the outer limiting member 14 with respect to the supporting surface 11. However, the present invention is not limited thereto. However, the present invention is not limited thereto.

The second reflective adhesive layer 80' is a transparent adhesive layer for light to pass through. The material of the second reflective glue layer 80' includes a second silicon-based resin, an ultraviolet light absorber, and light reflective particles.

Specifically, the second silicon-based resin may be a silicon-based resin having a methyl group, and a thermosetting silicon-based resin may be selected according to the requirement. For example, the second silicon-based resin may be methyl silica gel, methyl phenyl vinyl silica gel, or a combination thereof. The ultraviolet light absorber, the light reflective particles and the hindered amine light stabilizer are as described above and will not be described again.

In an exemplary embodiment, the ultraviolet light absorber is contained in the second reflective adhesive layer 80' in an amount of 0.1 to 2 parts by weight based on 100 parts by weight of the total weight of the second silicon-based resin. For example: 0.2, 0.4, 0.6, 0.8, 1.0, 1.2, 1.4, 1.6 or 1.8 parts by weight.

In an exemplary embodiment, the content of the light reflective particles in the second reflective adhesive layer 80' is 5 to 75 parts by weight based on 100 parts by weight of the total weight of the second silicon-based resin. For example: 15 parts by weight, 25 parts by weight, 35 parts by weight, 45 parts by weight, 55 parts by weight or 65 parts by weight.

The second reflective glue layer 80' may further comprise a hindered amine light stabilizer in addition to the second silicon-based resin, the ultraviolet light absorber, and the light reflective particles.

In an exemplary embodiment, the content of the hindered amine light stabilizer in the second reflective adhesive layer 80' is 0.1 to 15 parts by weight based on 100 parts by weight of the total weight of the second silicon-based resin. For example: 3 parts by weight, 6 parts by weight, 9 parts by weight or 12 parts by weight.

The thickness H6 of the second reflective adhesive layer 80' may be 150 micrometers to 200 micrometers with respect to the carrying surface 11. For example, the thickness H6 of the second reflective adhesive layer 80' may be 160 microns, 170 microns, 180 microns, or 190 microns.

In order to confirm that the semiconductor device of the present invention has high reliability, semiconductor devices of experimental examples 10 and 11 were prepared according to the structures of the semiconductor devices of the seventh embodiment and the eighth embodiment, respectively. Further, according to the semiconductor device shown in fig. 11, a semiconductor device of comparative example 6 was prepared.

Comparative example 6 differs from experimental examples 10 and 11 in that: the semiconductor device of comparative example 6 did not have the first or second reflective adhesive layers 80 and 80'. That is, the zener chip 70 is not covered by the first reflective adhesive layer 80 or the second reflective adhesive layer 80'.

In the experimental examples 10 and 11, the light reflective particles, the ultraviolet light absorber and the hindered amine light stabilizer are the same as those described above, and thus, the description thereof will not be repeated. The specific components of the first reflective adhesive layer 80 or the second reflective adhesive layer 80' in experimental examples 10 and 11 are listed in table 6. The material of the light-transmitting glue layer 90 in the experimental examples 10 and 11 and the comparative example 6 was fluorine resin. The semiconductor devices of examples 10 and 11 and comparative example 6 were subjected to a light emission effect test and a reliability test, and the results are shown in table 6. In the light emission effect test, the light emission intensity of the semiconductor device in comparative example 6 was defined as 100% for comparison.

The thickness H6 of the second reflective adhesive layer 80' is 150 micrometers to 200 micrometers. If the thickness H6 of the second reflective adhesive layer 80' is too thick, the space where the transparent adhesive layer 90 can be disposed is compressed, and the overall light emitting effect of the semiconductor device is reduced. If the thickness H6 of the second reflective adhesive layer 80' is too thin, the zener chip 70 cannot be effectively protected, and the reliability of the semiconductor device cannot be effectively improved.

TABLE 6

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As can be seen from the results of Table 6, the reliability of the semiconductor device can be improved and the light emitting effect can be maintained to a certain extent no matter the first or second reflective adhesive layer 80, 80' is used to cover the Zener chip 70.

Ninth embodiment

Referring to fig. 9, a semiconductor device according to a ninth embodiment of the present invention is similar to the semiconductor device according to the eighth embodiment (fig. 8), and includes: the light emitting device comprises a substrate 10, a light emitting unit 30, a zener chip 70, a first reflective adhesive layer 80, a second reflective adhesive layer 80' and a light transmitting adhesive layer 90.

The ninth embodiment differs from the eighth embodiment in that: the zener chip 70 is located in the central area 111, and the first reflective adhesive layer 80 is used to cover the zener chip 70. Therefore, the light-transmitting glue layer 90 encapsulates the light-emitting unit 30, the zener chip 70 and the first reflective glue layer 80 at the same time.

In the ninth embodiment, the second reflective adhesive layer 80' surrounds the light transmissive adhesive layer 90 to form a uniform and dense waterproof layer. In this way, external moisture or air can be prevented from contacting the light emitting unit 30 or the zener chip 70, thereby improving the reliability of the semiconductor device.

Tenth embodiment

Referring to fig. 10, a semiconductor device according to a tenth embodiment of the present invention is similar to the semiconductor device (fig. 9) of the ninth embodiment, and includes: the light emitting device comprises a substrate 10, a light emitting unit 30, a zener chip 70, a first reflective adhesive layer 80, a second reflective adhesive layer 80' and a light transmitting adhesive layer 90. The tenth embodiment differs from the ninth embodiment in that: a reflective layer 34 is provided around the light emitting unit 30.

The reflective layer 34 is formed on the side light emitting surface 32 of the light emitting unit 30 to concentrate the light generated by the light emitting unit 30 and to protect the light emitting unit 30, and the reflective layer 34 can prevent the light emitting unit 30 from contacting with external moisture. The material of the reflective layer 34 includes a transparent silica gel and light reflective particles (e.g., silicone and polytetrafluoroethylene particles). In order to confirm that the semiconductor device of the present invention has high reliability, semiconductor devices of experimental examples 12 and 13 were prepared according to the structures of the semiconductor device of the ninth and tenth embodiments, respectively. Further, according to the semiconductor device shown in fig. 11, a semiconductor device of comparative example 6 was prepared.

Comparative example 6 differs from experimental examples 12 and 13 in that: the semiconductor device of comparative example 6 did not have the first reflective adhesive layer 80. That is, the zener chip 70 is not covered by the first reflective adhesive layer 80.

In experimental examples 12 and 13, the light reflective particles, the ultraviolet light absorber and the hindered amine light stabilizer are the same as those described above, and thus, the description thereof will not be repeated. The specific compositions of the first and second reflective adhesive layers 80 and 80' in examples 12 and 13 are shown in Table 7. The material of the light-transmitting glue layer 90 in the experimental examples 12 and 13 and the comparative example 6 was fluorine resin. The semiconductor devices of examples 12 and 13 and comparative example 6 were subjected to a light emission effect test and a reliability test, and the results are shown in table 7. In the light emission effect test, the light emission intensity of the semiconductor device in comparative example 6 was defined as 100% for comparison.

TABLE 7

As can be seen from the results of table 7, the reflective layer 34 is formed on the surface of the light emitting unit 30, so that the effect of protecting the light emitting unit 30 is achieved, and the light emitting effect and reliability of the semiconductor device can be improved.

As can be seen from the above description, the arrangement of the reflective adhesive layer 40, the first reflective adhesive layer 80 or the second reflective adhesive layer 80' can prevent the silicone resin in the reflective adhesive layer from being damaged by the mechanism of physical reflection and chemical absorption, thereby improving the reliability of the semiconductor device and maintaining a certain light emitting effect.

In addition, the present invention can divide the carrying surface 11 into a central area 111 and a peripheral area 112 by the arrangement of the inner limiting member 13 and the outer limiting member 14, so as to divide the first reflective adhesive layer 80, the second reflective adhesive layer 80' and the transparent adhesive layer 90, thereby further improving the reliability of the semiconductor device.

The foregoing disclosure is only a preferred embodiment of the present invention and is not intended to limit the scope of the claims, so that all equivalent technical changes made by the application of the present invention and the accompanying drawings are included in the scope of the claims.

Claims

1. A semiconductor assembly, the semiconductor assembly comprising:

a substrate having a bearing surface;

the retaining wall is arranged on the bearing surface and is provided with an inner side surface, and the bearing surface and the inner side surface define a containing space;

the light-emitting unit is arranged in the accommodating space and is borne on the bearing surface, and the light-emitting unit is provided with an upper light-emitting surface and a side light-emitting surface; and

the reflecting glue layer is arranged in the accommodating space and positioned between the inner side surface and the side luminous surface; the reflective adhesive layer comprises a base resin, an ultraviolet light absorber and light reflective particles.

2. The semiconductor assembly of claim 1, wherein a height of the reflective glue layer on a side adjacent to the side light emitting surface is lower than a height of the upper light emitting surface with respect to the bearing surface.

3. The semiconductor assembly of claim 1, wherein the reflective glue layer contacts the side light emitting surface and the inner side surface, the reflective glue layer having a lower height adjacent the side light emitting surface than adjacent the inner side surface relative to the carrier surface.

4. The semiconductor device of claim 1, wherein the reflective adhesive layer forms a concave-up curved surface or a concave-down curved surface between the retaining wall and the light emitting unit.

5. The semiconductor assembly of claim 1, wherein the thickness of the reflective glue layer on a side adjacent to the side light emitting face is 180 microns to 300 microns relative to the bearing face.

6. The semiconductor component according to claim 1, wherein the ultraviolet light absorber is contained in an amount of 0.1 to 15 parts by weight based on 100 parts by weight of the total weight of the base resin.

7. The semiconductor component according to claim 1, wherein the content of the light reflecting particles is 5 parts by weight to 75 parts by weight based on 100 parts by weight of the total weight of the base resin.

8. The semiconductor device of claim 1, wherein the reflective glue layer material further comprises a hindered amine light stabilizer.

9. The semiconductor assembly of claim 8, wherein the hindered amine light stabilizer is present in an amount of 0.1 to 15 parts by weight based on 100 parts by weight of the total weight of the base resin.

10. The semiconductor device of claim 1, further comprising a first light transmissive adhesive layer disposed between the substrate and the reflective adhesive layer; the material of the first light-transmitting glue layer comprises a first base resin and an ultraviolet light absorber.

11. The semiconductor component according to claim 10, wherein the ultraviolet light absorber is contained in an amount of 0.1 to 2 parts by weight based on 100 parts by weight of the total weight of the first base resin.

12. The semiconductor assembly of claim 10, wherein the first light transmissive adhesive layer has a thickness of 50 microns to 100 microns on a side adjacent the side light emitting face relative to the bearing face.

13. The semiconductor package according to claim 10, wherein the first light-transmitting glue layer further comprises a hindered amine light stabilizer in an amount of 0.1 to 15 parts by weight based on 100 parts by weight of the total weight of the first base resin.

14. The semiconductor device of claim 10, further comprising a second layer of light transmissive adhesive disposed between the substrate and the first layer of light transmissive adhesive; the second light-transmitting glue layer comprises a second base resin and an ultraviolet light absorber, and the content of the ultraviolet light absorber in the second light-transmitting glue layer is higher than that of the ultraviolet light absorber in the first light-transmitting glue layer.

15. The semiconductor assembly of claim 14, wherein the ultraviolet light absorber is present in the second light transmissive adhesive layer in an amount of 5 to 15 parts by weight based on 100 parts by weight of the total weight of the second base resin.

16. The semiconductor assembly of claim 14, wherein the second light transmissive adhesive layer has a thickness of 70 microns to 150 microns on a side adjacent the side light emitting face relative to the bearing face.

17. The semiconductor device of claim 14, wherein the second light transmissive adhesive layer further comprises a hindered amine light stabilizer in an amount of 0.1 to 15 parts by weight based on 100 parts by weight of the total weight of the light transmissive adhesive.

18. The semiconductor assembly of claim 1, wherein the base resin is methyl silicone, methyl phenyl vinyl silicone, or a combination thereof.

19. The semiconductor package according to claim 1, wherein the upper light emitting surface and the side light emitting surface of the light emitting unit are formed with a protective layer, and the material forming the protective layer is a light-transmitting silica gel.