CN116590679A - Vacuum magnetron sputtering horizontal double-sided coating system - Google Patents

Abstract

The invention discloses a vacuum magnetron sputtering horizontal double-sided coating system, which comprises a vacuumizing mechanism, an inlet chamber, a heating chamber, a transfer chamber and a coating chamber, wherein the inlet chamber, the transfer chamber and the coating chamber are sequentially connected, the heating chamber and the transfer chamber are connected, a magnetron sputtering system and a rotatable turntable are arranged on the coating chamber, a plurality of substrate mounting positions are arranged on the turntable in an annular array manner, the magnetron sputtering system comprises an upper cathode magnetron sputtering assembly and a lower cathode magnetron sputtering assembly which are respectively positioned above and below the turntable, the vacuumizing mechanism comprises a low vacuum pump set, a high vacuum pump set and a deep cooling pump set, and the coating chamber is connected with at least one group of low vacuum pump sets, at least one group of high vacuum pump sets and at least one group of deep cooling pump sets. The invention can realize synchronous film plating on both sides of the substrate, and the prepared film has strong adhesive force, compact film, good uniformity, stable film formation and high efficiency, and is suitable for plating of conductive films, semiconductors, superhard AR films, cut-off filters, vehicle-mounted laser radars and other film layers.

Description

Vacuum magnetron sputtering horizontal double-sided coating system

Technical Field

The invention belongs to the technical field of magnetron sputtering coating, and particularly relates to a vacuum magnetron sputtering horizontal double-sided coating system.

Background

The magnetron sputtering coating is a coating technology which takes a coating material as a target cathode, utilizes argon ions to bombard the target material to generate cathode sputtering, and sputters target atoms onto a workpiece to form a deposition layer. With the continuous development of modern industry and the continuous improvement of product quality requirements, the requirements on coating technology are also continuously improved. For products requiring double-sided coating, the prior art has many defects, such as that one side needs to be coated and the other side needs to be coated, which obviously reduces coating efficiency, and the substrate needs to be subjected to turn-over or turn-around operation to coat the other side, which reduces the uniformity of coating on both sides of the substrate. For another example, when a conductive film needs to be plated on a plastic substrate, the existing plating process is difficult to realize at one time, and the problems of discontinuous working procedures, poor integrated forming effect, low production efficiency, environmental pollution and the like exist. Moreover, the existing multiple double-sided coating equipment is large in size and occupied area, and the production cost is greatly increased. Therefore, it is necessary to provide a film plating apparatus having the characteristics of good uniformity, stable film formation, high efficiency, and the like.

Disclosure of Invention

Aiming at the problems in the prior art, the invention aims to provide a vacuum magnetron sputtering horizontal double-sided coating system, wherein synchronous coating can be realized on two sides of a substrate, the coating layers coated on two sides of the same substrate are more uniform and consistent, the coating layer errors coated on different substrates are smaller, the coating chamber is subjected to multistage vacuum pumping, the large-scale and high-precision vacuum degree adjustment is realized, and the four chambers are compact in arrangement, perfect in function and stable and reliable in operation; the lower cathode magnetron sputtering assembly is driven by the lower cathode, so that the lower cathode magnetron sputtering assembly is convenient to mount, dismount and maintain, and the coating system combines the technologies of machinery, electricity, control, vacuum, heating, transmission, ion cleaning, evaporation, magnetron sputtering, materials, chemical industry and the like, and the prepared film has strong adhesive force, compact film, good uniformity, stable film formation, high efficiency, intelligence, low failure rate and easy maintenance; the method is suitable for plating of film layers such as conductive films, semiconductors, superhard AR films, cut-off filters, vehicle-mounted laser radars and the like.

In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:

the utility model provides a horizontal two-sided coating film system of vacuum magnetron sputtering, including evacuating mechanism, the entry room, the heating chamber, transfer room and coating film room, the entry room, transfer room and coating film room connect gradually, heating chamber and transfer room are connected, be equipped with magnetron sputtering system and rotatable carousel that arranges horizontally on the coating film room, the carousel is located the coating film room, a plurality of substrate installation positions that are used for installing the substrate are arranged to annular array on the carousel, magnetron sputtering system includes at least one set of upper cathode magnetron sputtering subassembly and at least one set of lower cathode magnetron sputtering subassembly, upper cathode magnetron sputtering subassembly and lower cathode magnetron sputtering subassembly are located the top and the below of carousel respectively, evacuating mechanism includes at least two sets of low vacuum pump sets, at least one set of high vacuum pump sets and at least one set of cryopump sets, at least one set of low vacuum pump sets, at least one set of high vacuum pump sets and at least one set of cryopump sets are connected to the coating film room.

As a further improvement of the above technical scheme:

preferably, the inlet chamber, the transfer chamber and the coating chamber are sequentially arranged on a straight line, and the heating chamber is arranged at one side of the transfer chamber.

Preferably, a vacuum manipulator is arranged in the transfer chamber, and the vacuum manipulator transfers the substrate among the inlet chamber, the heating chamber and the coating chamber.

Preferably, a first carrier basket for supporting a substrate to be coated or a substrate after coating is completed is arranged in the inlet chamber, a second carrier basket for supporting the substrate is arranged in the heating chamber, the first carrier basket is arranged in the inlet chamber in a lifting manner, and the second carrier basket is arranged in the heating chamber in a lifting manner.

Preferably, a heating assembly for heating the substrate is further provided in the heating chamber, the heating assembly being arranged on the second carrier basket.

Preferably, the coating chamber comprises a cavity side wall, a top cover and a lower bottom, wherein the cavity side wall, the top cover and the lower bottom enclose an internal containing cavity of the coating chamber, and the top cover is detachably covered on the top surface of the cavity side wall and the lower bottom is positioned on the bottom surface of the side wall.

Preferably, the double-sided coating system further comprises a door lifting assembly, wherein the door lifting assembly is connected with and drives the top cover to descend to cover the top surface of the side wall of the cavity or drives the top cover to ascend to be separated from the side wall of the cavity.

Preferably, a plurality of groups of upper cathode magnetron sputtering assemblies are arranged, the plurality of groups of upper cathode magnetron sputtering assemblies are arranged on the top cover of the coating chamber at intervals, a plurality of groups of lower cathode magnetron sputtering assemblies are arranged, and the plurality of groups of lower cathode magnetron sputtering assemblies are arranged on the lower bottom of the coating chamber at intervals.

Preferably, the double-sided coating system further comprises at least one group of lower cathode driving assemblies, wherein the lower cathode driving assemblies are positioned below the lower bottom of the coating chamber, and the lower cathode driving assemblies support and drive the lower cathode magnetron sputtering assemblies to ascend or descend or move out of the position right below the lower bottom or move into the position right below the lower bottom.

Preferably, two groups of low vacuum pump sets are arranged, the inlet chamber, the heating chamber and the transfer chamber share one group of low vacuum pump sets, and the coating chamber is connected with the other group of low vacuum pump sets

The beneficial effects of the invention are as follows:

1) The double sides of the turntable can be provided with a plurality of pairs of rotating cathodes, an ICP ion source system and an AF evaporation system, which can meet the single/double-sided coating process requirements of various products, and when in double-sided coating, the two sides of the substrate can realize synchronous coating; the ICP plasma source has high gas cracking rate which can reach about 90%, high radio frequency conversion efficiency of the integrated matcher and high ion energy density, and is beneficial to the stability of long-term process.

2) The plurality of substrate mounting positions on the turntable are uniformly arranged at intervals in an annular array, and when the turntable rotates, the substrates on the substrate mounting positions revolve around the same central shaft, so that the film layers plated on the two sides of the same substrate are more uniform and consistent, and the film layer errors plated on different substrates are smaller;

3) The turntable can adapt to wafers and products with various specifications and sizes, and can also be provided with water cooling, so that the customization requirement is met.

4) The film coating chamber realizes multistage vacuumizing through a low vacuum pump set, a high vacuum pump set and a cryogenic pump set, and realizes large-scale and high-precision vacuum degree adjustment;

5) The four chambers are compact in arrangement, perfect in function and stable and reliable in operation;

6) The lower cathode magnetic control sputtering component is lifted or lowered or moved out of the position right below the lower bottom or moved into the position right below the lower bottom through the lower cathode driving component, so that the lower cathode magnetic control sputtering component is convenient to mount, dismount and maintain, the top cover is detachably covered on the top of the coating chamber, and components in the coating chamber can be conveniently mounted and dismounted through the detachable arrangement of the top cover;

7) The vacuum manipulator in the transfer chamber can carry the substrate among the inlet chamber, the heating chamber and the coating chamber, and the coating system combines the technologies of machinery, electricity, control, vacuum, heating, transmission, ion cleaning, evaporation, magnetron sputtering, materials, chemical industry and the like, is suitable for the requirements of the modern industrial coating industry, and has the characteristics of strong adhesive force of the prepared film, compact film, good uniformity, stable film forming, high efficiency, intelligentization, low failure rate, easy maintenance and the like;

8) The method is suitable for plating of film layers such as conductive films, semiconductors, superhard AR films, cut-off filters, vehicle-mounted laser radars and the like.

9) The vacuum cleaning mechanical arm is adopted for cleaning and conveying, the film plating chamber is in a stable vacuum environment for a long time, the vacuum is not broken, the process state is stable, one-time double-sided film formation can be met, the low-temperature film formation is realized, the film formation repeatability is good, and the film quality is stable.

Drawings

Fig. 1 is a schematic diagram of the structure of an embodiment of the present invention.

Fig. 2 is a schematic view of another view structure of an embodiment of the present invention.

Fig. 3 is a schematic structural diagram of the working principle of the invention.

FIG. 4 is a schematic view of a coating chamber according to one embodiment of the present invention.

Fig. 5 is a schematic structural view of a turntable according to an embodiment of the present invention.

Fig. 6 is a schematic diagram of the structure of a turntable and a rotation mechanism according to an embodiment of the present invention.

Fig. 7 is a schematic structural view of a turntable with water-cooled tubes according to an embodiment of the present invention.

FIG. 8 is a schematic diagram of a heating assembly according to one embodiment of the invention.

Fig. 9 is a schematic view of a lower cathode drive assembly according to an embodiment of the invention.

FIG. 10 is a schematic view of a second carrier basket and heating assembly according to one embodiment of the present invention.

Fig. 11 is another view of fig. 10.

Detailed Description

The following describes specific embodiments of the present invention in detail with reference to the drawings. It should be understood that the detailed description and specific examples, while indicating and illustrating the invention, are not intended to limit the invention.

Spatially relative terms, such as "above … …," "above … …," "upper surface at … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial location relative to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "above" or "over" other devices or structures would then be oriented "below" or "beneath" the other devices or structures. Thus, the exemplary term "above … …" may include both orientations of "above … …" and "below … …". The device may also be positioned in other different ways (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

A vacuum magnetron sputtering horizontal double-sided coating system is shown in figures 1-11, and comprises a control system, a vacuum pumping mechanism, a door lifting assembly, at least one group of lower cathode driving assemblies 7 and four chambers, wherein the four chambers are respectively an inlet chamber 1, a heating chamber 2, a transfer chamber 3 and a coating chamber 4. The inlet chamber 1, the transfer chamber 3 and the coating chamber 4 are connected in sequence, and the heating chamber 2 is connected with the transfer chamber 3.

In this embodiment, the inlet chamber 1, the transfer chamber 3 and the coating chamber 4 are arranged in this order in a straight line. The heating chamber 2 is arranged at one side of the transfer chamber 3 such that the inlet chamber 1, the transfer chamber 3 and the heating chamber 2 form an L-shape. The inlet chamber 1, the heating chamber 2, the transfer chamber 3 and the coating chamber 4 are positioned on the same horizontal plane, namely a horizontal module structure is formed.

And a gate valve is respectively arranged between the transfer chamber 3 and the coating chamber 4 and between the transfer chamber 3 and the heating chamber 2, and the gate valve can be arranged or not arranged between the transfer chamber 3 and the inlet chamber 1, so that the communication and the separation of two adjacent chambers are realized through the switch of the gate valve. The gate valve is electrically connected with the control system, and the switch of the gate valve is controlled by the control system.

In this embodiment, the transfer chamber 3 and the inlet chamber 1 are in communication, i.e. no gate valve is provided between the transfer chamber 3 and the inlet chamber 1.

In this embodiment, the gate valve is a pneumatic rectangular gate valve.

In this embodiment, the inlet chamber 1, the heating chamber 2 and the transfer chamber 3 are rectangular cavities, the inlet chamber 1 and the transfer chamber 3 are provided with two inlets and outlets, and the two inlets and outlets of the inlet chamber 1 can be arranged on two adjacent or opposite sides. The two entrances and exits of the transfer chamber 3 are arranged on two opposite sides.

A first carrier basket is arranged in the inlet chamber 1 and is used for supporting a substrate to be coated or a substrate after coating is completed. The substrates are arranged in multiple layers at intervals on the first carrier basket, thus fully utilizing the space in the inlet chamber 1. The first carrier basket is arranged in the inlet chamber 1 in a lifting manner, and is driven by a lifting driving assembly to ascend or descend, wherein the lifting driving assembly can adopt a power component in the prior art.

The heating chamber 2 is provided therein with a heating unit 21 and a second carrier basket 22, as shown in fig. 10 and 11, the second carrier basket 22 for supporting a substrate is provided in the same manner as the first carrier basket, and the second carrier basket 22 is provided in the heating chamber 2 so as to be liftable. The heating assembly 21 is used for heating the substrate on the second carrier basket 22 in the heating chamber 2 to realize preheating and baking treatment. Preferably, the heating assembly 21 is disposed on the second carrier basket 22.

In this embodiment, the heating element 21 is an armored heater, and the heating range is from room temperature to 150 ℃. The sheathed heater is controlled by PID. As shown in fig. 8, the heating element 21 for the sheathed heater is embedded in an aluminum plate, and the aluminum plate is placed on both sides of each substrate on the second carrier basket 22, so as to heat the substrates.

The transfer chamber 3 is internally provided with a vacuum manipulator 31, and the vacuum manipulator 31 is electrically connected with a control system. The vacuum robot 31 is responsible for substrate transport and turnover. The vacuum robot 31 may transfer substrates between the inlet chamber 1, the heating chamber 2 and the coating chamber 4, i.e. the vacuum robot 31 may transfer substrates on a first carrier basket in the inlet chamber 1 to a second carrier basket 22 in the heating chamber 2, or transfer substrates on a second carrier basket 22 in the heating chamber 2 to a turntable 41 (described in detail later) in the coating chamber 4, or transfer substrates in the coating chamber 4 to a first carrier basket in the inlet chamber 1.

In this embodiment, the vacuum manipulator 31 is a three-axis single-arm clean manipulator suitable for vacuum environment, and the arm joint part is sealed by magnetic fluid. Repeated positioning accuracy is within 0.1 mm. The vacuum robot 31 may be a three-axis single-arm cleaning robot available in the market.

The first carrier basket and the second carrier basket 22 may be manufactured using products known in the art. In this embodiment, the first carrier basket and the second carrier basket 22 have the same structure, and are all from Shenzhen east Hongxin equipment Co.

The coating chamber 4 comprises a chamber side wall 41', a top cover 42' and a bottom. The side wall 41', the top cover 42' and the bottom enclose an inner cavity of the coating chamber 4. The top cover 42' covers the top surface of the cavity side wall 41' and the bottom is positioned on the bottom surface of the side wall 41'. The top cover 42 'is detachably covered on the top surface of the cavity side wall 41' to realize the installation and the detachment of the components in the coating chamber 4. The cavity side wall 41' is provided with a through hole communicated with the transfer chamber 3. And (5) polishing the inner surface of the coating chamber 4. The periphery of the target position of the coating chamber 4 is provided with an observation window, so that the working condition in the coating chamber 4 can be observed conveniently. The viewing window may be provided on the side wall 41 'or the top cover 42'.

In addition, a protective shield is arranged in the coating chamber 4 to prevent the target particles from sputtering on the inner wall of the coating chamber 4, but not to block the target particles from sputtering on the substrate on the turntable 41.

The coating chamber 4 is supported on the ground or the workbench through the support frame, so that the lower bottom of the coating chamber 4 is lifted away from the ground or the workbench, namely, a certain distance is reserved between the lower bottom of the coating chamber 4 and the ground or the workbench.

The door lift assembly is connected and drives the top cover 42 'down to cover the top surface of the cavity side wall 41' or drives the top cover 42 'up to disengage from the cavity side wall 41'. The top cover 42 'can be sealed by a seal when it is covered on the top surface of the cavity side wall 41'.

In this embodiment, the door lifting assembly includes a plurality of sets of cylinders or hydraulic cylinders, which are arranged around the film plating chamber 4 at intervals, one end of each cylinder or hydraulic cylinder is connected to the ground or a workbench, and the other end is connected to the top of the top cover 42'. In addition, a drag chain 45 is disposed around the plating chamber 4 to bind and comb the wires of the electrical components on the top cover 42'.

The coating chamber 4 is provided with a turntable 41, a rotating mechanism 42, an ICP ion source 43 and a magnetron sputtering system.

The turntable 41 is detachably mounted in the coating chamber 4. As shown in fig. 5 to 7, the turntable 41 has a disk structure, and a plurality of substrate mounting positions 411 are arranged on the turntable 41 in an annular array, and the substrate mounting positions 411 are circular through holes penetrating the turntable 41. The circumference of the substrate mounting position 411 is provided with a circle of steps, and when the substrate is mounted on the substrate mounting position 411, the substrate is supported on the steps of the substrate mounting position 411 so that other parts of the substrate are not blocked except for the contact part of the edge of the substrate and the steps.

In this embodiment, the turntable 41 is made of aluminum, the turntable 41 is provided with a water cooling pipe 412, and the water cooling pipe 412 is connected with an external water supply system through a gas-liquid slip ring, so that the water supply to the water cooling pipe 412 is not affected when the turntable 41 rotates. The water cooling pipe 412 on the turntable 41 is one, that is, only one water inlet and one water outlet, and the water cooling pipe 412 sequentially bypasses each substrate mounting position 411, that is, the water cooling pipe 412 is surrounded outside the substrate along the circumference of the substrate.

In this embodiment, the turntable 41 has a dimension Φ1900×35mm.

The turntable 41 is adaptable to a variety of sizes of wafers and products, in this embodiment, 4-12 inches.

When the specification of the substrate is changed, a different turntable 41 can be replaced, so that the specification of the substrate mounting position 411 on the new turntable 41 is suitable for the new substrate specification, and an annular matching piece can be mounted on the substrate mounting position 411 of the original turntable 41, so that the matching piece is suitable for the new substrate.

The rotating mechanism 42 is connected to and drives the turntable 41 to rotate in a horizontal plane, and when the turntable 41 rotates, the substrates on the turntable 41 revolve around a central axis, which is the central axis of rotation of the turntable 41. The turntable 41 is positioned in the middle part of the coating chamber 4, and a space is reserved above and below the turntable 41. The turntable 41 is arranged horizontally. The rotation mechanism 42 is electrically connected to the control system.

In this embodiment, the rotation mechanism 42 is a DD motor, i.e., a DD direct drive motor. The rotating speed of the turntable 41 is 1-80 r/min, and the speed is stepless adjustable. The turntable 41 is detachably connected to a DD motor, and a seal is achieved between the DD motor and the turntable 41 by means of a magnetic fluid seal to transfer rotational movement into the sealed chamber.

The vacuumizing mechanism is used for vacuumizing the inlet chamber 1, the heating chamber 2, the transfer chamber 3 and the coating chamber 4. The evacuation mechanism includes at least one set of low vacuum pump sets 51, at least one set of high vacuum pump sets 52, and at least one set of cryopump sets.

The inlet chamber 1, the heating chamber 2 and the transfer chamber 3 are vacuumized through the low vacuum pump set 51, the coating chamber 4 is vacuumized through the low vacuum pump set 51 and the high vacuum pump set 52, or is vacuumized through the cryopump set, the low vacuum pump set 51, the high vacuum pump set 52 and the cryopump set realize different degrees of vacuumization for the chambers, and the maximum vacuumization degree of the low vacuum pump set 51, the high vacuum pump set 52 and the cryopump set is sequentially increased.

In this embodiment, two groups of low vacuum pump sets 51 and three rough pumping valves are provided, the inlet chamber 1, the heating chamber 2 and the transfer chamber 3 share one low vacuum pump set 51, and the film plating chamber 4 uses one low vacuum pump set 51 alone.

In this embodiment, the low vacuum pump set 51 includes a dry screw vacuum pump, a low vacuum pipe, a front valve and a pipe inflation valve, the dry screw vacuum pump is connected to a chamber to be pumped through the low vacuum pipe, and the low vacuum pipe is provided with the inflation valve, the vacuum gauge and the leak detector.

The rough pumping valve is arranged at the joint of the corresponding chamber and the low vacuum pipeline. The three rough pumping valves are respectively arranged on the top cover 42' of the film plating chamber 4, the top of the heating chamber 2 and the top of the inlet chamber 1, namely, the heating chamber 2 and the inlet chamber 1 are respectively connected with the same dry screw vacuum pump through low vacuum pipelines, and as the inlet chamber 1 and the transfer chamber 3 are communicated, a rough pumping valve is arranged in a large communicated space between the inlet chamber 1 and the transfer chamber 3. The coating chamber 4 is connected with another dry screw vacuum pump through a low vacuum pipeline.

The high vacuum pump set 5 is installed on the film plating chamber 4, and the high vacuum pump set 52 comprises a plurality of molecular pumps 521, a low temperature catcher and corresponding high vacuum valves. Preferably, the molecular pump 521 is mounted on the top cover 42', bottom and side walls 41' of the plating chamber 4.

In this embodiment, six molecular pumps 521 are provided, and three spaces above and below the turntable 41 in the plating chamber 4 are provided.

The ICP ion source 43 is provided with two sets disposed above and below the turntable 41 in the coating chamber 4, respectively. Two sets of ICP ion sources 43 are mounted on the top and bottom covers 42 'and 42', respectively, of the coating chamber 4.

The magnetron sputtering system includes at least one set of upper cathode magnetron sputtering assembly 441, at least one set of lower cathode magnetron sputtering assembly 442, and at least two sets of AF evaporation systems 443.

The upper cathode magnetron sputtering assembly 441 includes a cathode structure and a power supply, wherein in this embodiment, the cathode structure is a dual-target intermediate frequency rotating cathode, and the power supply is a 10KW intermediate frequency power supply. Each pair of rotating cathodes is controlled by a separate power supply. Each pair of rotating cathodes is provided with a gas distribution pipeline for supplying gas in the coating chamber 4, and the gas distribution pipeline is provided with a flowmeter.

In this embodiment, the gas supplied through the gas distribution pipe equipped with the rotating cathode is Ar.

The structure of the lower cathode magnetron sputtering assembly 442 is the same as that of the upper cathode magnetron sputtering assembly 441.

Upper and lower magnetron sputtering assemblies 441 and 442 are mounted above and below turntable 41, respectively. At least one set of AF evaporation systems 443 is also mounted above and below the turntable 41, respectively.

The upper cathode magnetron sputtering assembly 441 and at least one set of AF evaporation systems 443 are mounted on the top cover 42' of the coating chamber 4, and the lower cathode magnetron sputtering assembly 442 and at least one set of AF evaporation systems 443 are mounted on the lower bottom of the coating chamber 4.

The lower cathode driving assembly 7 as shown in fig. 9, the lower cathode driving assembly 7 is located below the lower bottom of the coating chamber 4. The lower cathode drive assembly 7 includes a drawer rail 71, a lift platform 72 and drive components. The lift platform 72 is slidably provided on the drawer rail 71, and the lift platform 72 is locked by bolts after being slid on the drawer rail 71 to any position along a straight line. The lifting platform 72 is a scissor type lifting structure, and the lifting platform 72 comprises a lower supporting seat 721, an upper supporting seat 723 and two groups of scissor type components, wherein the two groups of scissor type components are arranged at intervals in parallel, the upper end of each scissor type component is connected with the upper supporting seat 723, and the lower end of each scissor type component is connected with the lower supporting seat 721. The lower support 721 is provided with a plurality of bolt holes, and the lower support 721 is slidably disposed on the drawer rail 71 and is locked by bolts passing through the bolt holes after sliding to any position. The scissor assembly includes two connecting rods 722 hinged to each other in the middle. The lower ends of the two connection rods 722 are connected to the lower support base 721 and the upper ends are connected to the upper support base 723, wherein the lower end of one connection rod 722 is hinged to the lower support base 721 and the upper end is slidable along the bottom of the upper support base 723, and the upper end of the other connection rod 722 is hinged to the upper support base 723 and the lower end is slidable on the lower support base 721. The upper supporting seat 723 is supported with a cathode door assembly 73, the cathode door assembly 73 is composed of a lower cathode magnetron sputtering component 442 and a corresponding sealing door, an installation position for a through hole is arranged on the lower bottom of the coating chamber 4, when the cathode door assembly 73 is inserted into the installation position, the lower cathode magnetron sputtering component 442 enters the coating chamber 4, and the sealing door and the lower bottom are oppositely combined to realize sealing connection. The drive member is connected to and drives at least one connecting rod 722 to rotate, so that the scissor assembly drives the cathode door assembly 73 to ascend or descend. The lifting platform 72 is driven manually or electrically to slide along the drawer rail 71.

The number of groups of the lower cathode driving assemblies 7 is the same as the number of groups of the lower cathode magnetron sputtering assemblies 442, and when a plurality of groups of the lower cathode driving assemblies 7 are arranged, the straight lines of the drawer guide rails 71 of the plurality of groups of the lower cathode driving assemblies 7 intersect at one point.

The AF evaporation system 443 is an apparatus for plating an AF film by a vacuum evaporation plating method. The AF evaporation system 443 employs a prior art evaporation coating apparatus.

In this embodiment, three sets of upper cathode magnetron sputtering assemblies 441, three sets of lower cathode magnetron sputtering assemblies 442, and two sets of AF evaporation systems 443 are provided. One group of ICP ion sources 43, one group of AF evaporation systems 443 and three groups of upper cathode magnetron sputtering assemblies 441 are arranged on the top cover 42' of the coating chamber 4 at intervals, and the other group of ICP ion sources 43, the other group of AF evaporation systems 443 and three groups of lower cathode magnetron sputtering assemblies 442 are arranged on the lower bottom of the coating chamber 4 at intervals. The three sets of lower cathode magnetron sputtering assemblies 442 are respectively supported on the three sets of lower cathode driving assemblies 7, and the lower cathode magnetron sputtering assemblies 442 ascend or descend or move out of the position right below the lower bottom or move into the position right below the lower bottom through the lower cathode driving assemblies 7 so as to facilitate the installation, the disassembly and the maintenance of the lower cathode magnetron sputtering assemblies 442.

The control system is electrically connected with each electrical component, and the full-automatic or semi-automatic control of each electrical component is realized by setting a control program, and the specific program can be flexibly set according to application occasions and is not repeated here.

The coating chamber is also provided with a matched operating table 8 and an electric control cabinet 9.

Based on the above structure, the film plating method of the present invention comprises the steps of:

step S1: and (3) feeding: the substrate to be coated is placed on a first carrier basket in the inlet chamber 1.

In this step, the inlet chamber 1 is in communication with the outside, i.e., the inlet chamber 1 is not in a vacuum state, and the gate valve between the relay chamber 3 and the heating chamber 2, and the gate valve between the relay chamber 3 and the plating chamber 4 are closed. After the loading is completed, the inlet chamber 1 and the door communicated with the outside are closed.

Step S2: a vacuum is drawn on the inlet chamber 1.

In this step, the door communicating the inlet chamber 1 with the outside is closed, the rough pumping valve at the top of the inlet chamber 1 is opened, and the low vacuum pump unit 51 performs vacuum pumping on the inlet chamber 1.

When the vacuum degree in the inlet chamber 1 reaches the set value, the vacuum pumping operation of the low vacuum pump unit 51 to the inlet chamber 1 is stopped.

Step S3: the vacuum robot 31 in the transfer chamber 3 transfers the substrate on the first carrier basket in the inlet chamber 1 to the second carrier basket 22 in the heating chamber 2, and the substrate is heated in the heating chamber 2.

In this step, the gate valve between the heating chamber 2 and the transfer chamber 3 is opened, and the gate valve between the plating chamber 4 and the transfer chamber 3 is closed. After the substrate in the inlet chamber 1 is carried into the heating chamber 2, the gate valve between the heating chamber 2 and the transfer chamber 3 is closed, and the substrate is heated in the heating chamber 2.

During the process of transporting the substrate from the inlet chamber 1 to the heating chamber 2, the first carrier basket and the second carrier basket 22 are raised or lowered according to a set program to match the repeated running path and action of the vacuum robot 31.

Step S4: the vacuum robot 31 in the transfer chamber 3 transfers the substrates on the second carrier basket 22 in the heating chamber 2 to the turntable 41 in the plating chamber 4.

In this step, after the substrate is heated in the heating chamber 2, the gate valve between the plating chamber 4 and the transfer chamber 3 is opened, and the vacuum robot 31 transports the substrate in the heating chamber 2 into the plating chamber 4. During carrying, the rotating mechanism 42 drives the turntable 41 to rotate, the second carrier basket 22 is matched with the turntable to lift, the vacuum manipulator 31 sequentially carries a plurality of substrates on the second carrier basket 22 in the heating chamber 2 onto a plurality of substrate mounting positions 411 on the turntable 41, and finally, a gate valve between the film plating chamber 4 and the transfer chamber 3 is closed.

Step S5: the substrate is coated on both sides in the coating chamber 4.

In this step, the rotating mechanism 42 drives the turntable 41 to rotate, and the upper cathode magnetron sputtering assembly 441 and the lower cathode magnetron sputtering assembly 442 respectively coat the two surfaces of the substrate from above and below the turntable 41.

Before coating, the coating chamber 4 is vacuumized and the vacuum degree is accurately controlled through a low vacuum pump group 51, a high vacuum pump group 52 and a cryogenic pump group on the coating chamber 4.

Step S6: the vacuum robot 31 in the transfer chamber 3 transfers the substrate coated in the coating chamber 4 to the first carrier basket in the inlet chamber 1.

In this step, after the film plating is completed, the gate valve between the film plating chamber 4 and the transfer chamber 3 is opened, the rotary mechanism 42 drives the turntable 41 to rotate, and the vacuum manipulator 31 sequentially carries the plurality of substrates of the plurality of substrate mounting positions 411 on the turntable 41 in the film plating chamber 4 onto the first carrier basket in the inlet chamber 1.

Step S7: and (3) blanking: the inlet chamber 1 is deflated and opened, and the substrate coated on the first carrier basket is taken out.

In the step, after the substrates with the films coated in the coating chamber 4 are conveyed into the inlet chamber 1, the gate valve between the coating chamber 4 and the transfer chamber 3 and the gate valve between the heating chamber 2 and the transfer chamber 3 are closed, and then the inlet chamber 1 is deflated and opened.

Obviously, the first carrier basket and the second carrier basket 22 are arranged in a liftable manner in the above process, so that the vacuum manipulator 31 can sequentially transfer the plurality of substrates on the first carrier basket or the second carrier basket 22 to the target position according to the set route.

Finally, what is necessary here is: the above embodiments are only for further detailed description of the technical solutions of the present invention, and should not be construed as limiting the scope of the present invention, and some insubstantial modifications and adjustments made by those skilled in the art from the above description of the present invention are all within the scope of the present invention.

Claims (10)

1. The utility model provides a horizontal two-sided coating film system of vacuum magnetron sputtering, a serial communication port, including evacuating mechanism, entry room (1), heating chamber (2), transfer room (3) and coating film room (4), entry room (1), transfer room (3) and coating film room (4) connect gradually, heating chamber (2) are connected with transfer room (3), be equipped with magnetron sputtering system and rotatable carousel (41) of arranging horizontally on coating film room (4), carousel (41) are located coating film room (4), a plurality of substrate installation positions (411) that are used for installing the substrate have been arranged to annular array on carousel (41), magnetron sputtering system includes at least one set of upper cathode magnetron sputtering subassembly (441) and at least one set of lower cathode magnetron sputtering subassembly (442), upper cathode magnetron sputtering subassembly (441) and lower cathode magnetron sputtering subassembly (442) are located the top and the below of carousel (41) respectively, evacuating mechanism includes at least two sets of low vacuum pump group (51), at least one set of high vacuum pump group (52) and at least one set of deep vacuum pump group, coating film room (4) connects at least one set of low vacuum pump group (52) and at least one set of deep vacuum pump group.

2. The double-sided coating system of claim 1, wherein: the inlet chamber (1), the transfer chamber (3) and the coating chamber (4) are sequentially arranged on a straight line, and the heating chamber (2) is arranged on one side of the transfer chamber (3).

3. The double-sided coating system of claim 1, wherein: the transfer chamber (3) is internally provided with a vacuum manipulator (31), and the vacuum manipulator (31) transfers the substrate among the inlet chamber (1), the heating chamber (2) and the coating chamber (4).

4. A double-sided coating system according to claim 3, wherein: the inlet chamber (1) is internally provided with a first carrier basket for supporting a substrate to be coated or a substrate after coating is completed, the heating chamber (2) is internally provided with a second carrier basket (22) for supporting the substrate, the first carrier basket is arranged in the inlet chamber (1) in a lifting manner, and the second carrier basket (22) is arranged in the heating chamber (2) in a lifting manner.

5. The double-sided coating system of claim 4, wherein: a heating component (21) for heating the substrate is also arranged in the heating chamber (2), and the heating component (21) is arranged on the second carrier basket (22).

6. The double-sided coating system according to any one of claims 1 to 5, wherein: the coating chamber (4) comprises a cavity side wall (41 '), a top cover (42 ') and a lower bottom, wherein the cavity side wall (41 '), the top cover (42 ') and the lower bottom enclose an inner containing cavity of the coating chamber (4), and the top cover (42 ') is detachably covered on the top surface of the cavity side wall (41 ') and the lower bottom is located on the bottom surface of the side wall (41 ').

7. The double-sided coating system of claim 6, wherein: the double-sided coating system also comprises a door lifting assembly, wherein the door lifting assembly is connected with and drives the top cover (42 ') to descend to cover the top surface of the side wall (41') of the cavity or drives the top cover (42 ') to ascend to be separated from the side wall (41') of the cavity.

8. The double-sided coating system of claim 6, wherein: the magnetron sputtering device is provided with a plurality of groups of upper cathode magnetron sputtering components (441), the upper cathode magnetron sputtering components (441) are arranged on a top cover (42') of the coating chamber (4) at intervals, a plurality of groups of lower cathode magnetron sputtering components (442) are arranged on the lower bottom of the coating chamber (4) at intervals, and the lower cathode magnetron sputtering components (442) are arranged on the lower bottom of the coating chamber.

9. The double-sided coating system of claim 8, wherein: the double-sided coating system further comprises at least one group of lower cathode driving assemblies (7), wherein the lower cathode driving assemblies (7) are positioned below the lower bottom of the coating chamber (4), and the lower cathode driving assemblies (7) support and drive the lower cathode magnetron sputtering assemblies (442) to ascend or descend or move out of the position right below the lower bottom or move into the position right below the lower bottom.

10. The double-sided coating system of claim 1, wherein: two groups of low vacuum pump sets (51) are arranged, the inlet chamber (1), the heating chamber (2) and the transfer chamber (3) share one group of low vacuum pump sets (51), and the coating chamber (4) is connected with the other group of low vacuum pump sets (51).