CN116586789A

CN116586789A - Laser perforating method and preparation method of semiconductor device

Info

Publication number: CN116586789A
Application number: CN202310854604.1A
Authority: CN
Inventors: 陈彦亨
Original assignee: Shenghejing Micro Semiconductor Jiangyin Co Ltd
Current assignee: SJ Semiconductor Jiangyin Corp
Priority date: 2023-07-13
Filing date: 2023-07-13
Publication date: 2023-08-15

Abstract

The application provides a laser perforating method and a preparation method of a semiconductor device. The laser perforating method comprises the following steps: taking n opening positions to be processed and prepared on a substrate as a group, carrying out laser irradiation for a time on a previous opening position, then moving to carry out laser irradiation for b time on a next opening position, and sequentially moving until all opening positions of the group are subjected to laser irradiation for preset times to process through holes with required sizes at all opening positions, wherein the preset times are the total number of laser irradiation required for completing opening at the corresponding opening position, n is an integer greater than or equal to 3, a and b are integers less than the corresponding preset times, the n openings are arranged in a multi-row multi-array, the moving punching process is spiral movement, and the previous opening position is not adjacent to the next opening position. The application can effectively avoid the heat accumulation effect in the laser tapping process, avoid the defects of tapping deformation, layering of the subsequent process and the like, and is beneficial to improving the production yield.

Description

Laser perforating method and preparation method of semiconductor device

Technical Field

The application relates to the technical field of semiconductors, in particular to a back-end packaging method, and particularly relates to a laser perforating method and a preparation method of a semiconductor device.

Background

Laser drilling is a method of preparing vias commonly used in semiconductor device fabrication. Especially in the back-end packaging process, laser drilling is widely used. For example, conventionally, a hole penetrating a printed wiring board is formed by laser drilling on a printed wiring board in which metal foils are laminated on both sides of an insulating board.

The laser drilling process generally includes drilling a calibration hole penetrating the printed wiring board using a laser, photographing a positioning hole, determining a laser irradiation position according to the photographed position of the calibration hole, and irradiating the laser irradiation position with the laser to form a hole to the printed wiring board. There are three main modes of laser irradiation: (a) Single pulse: drilling holes by single pulse laser; (b) Percure: the drilling depth is increased by using multiple pulse lasers, but the drilling aperture is larger than the diameter of the focused light spot by the method; (c) Trepanning: when the drilling aperture is larger than the focused beam diameter, the drilling aperture is enlarged by moving the beam trajectory.

The existing laser perforation method is to continuously irradiate laser on the same perforation position until the production of the through holes with the required size is completed, and then continuously irradiate the next hole, and the like until the production of all the through holes is completed.

The inventors have found through extensive studies that such a method of continuously irradiating a location with laser light until a single via is completed may result in less energy accumulation and less dissipation during irradiation, resulting in a heat accumulation effect. And along with the increase of the size of the opening, the laser dotting times of a single hole are more, the laser energy is more, and finally the heat accumulation phenomenon at the edge of the opening is more serious, so that the layering of a wiring layer (RDL) and a polyimide layer (PI) in the subsequent process can be caused, and the electrical failure of the device is caused. In addition, heat accumulation may also cause deformation of the through holes, resulting in a decrease in production yield.

It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solution of the present application and is presented for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background of the application section.

Disclosure of Invention

In view of the above-mentioned drawbacks of the prior art, an object of the present application is to provide a laser drilling method and a method for manufacturing a semiconductor device, which are used for solving the problems that in the prior art, a laser drilling method for continuously irradiating a location until a single hole is processed causes energy to accumulate and not dissipate in the irradiation process, so that heat accumulation occurs at the edge of the hole, resulting in delamination in the subsequent process and deformation of the through hole, resulting in reduced device performance, and the like.

In order to achieve the above object, the present application provides a laser drilling method, including: taking n opening positions to be processed and prepared on a substrate as a group, carrying out laser irradiation for a time on a previous opening position, then moving to carry out laser irradiation for b time on a next opening position, and sequentially moving until all opening positions of the group are subjected to laser irradiation for preset times to process through holes with required sizes at all opening positions, wherein the preset times are the total number of laser irradiation required for completing opening at the corresponding opening position, n is an integer greater than or equal to 3, a and b are integers less than the corresponding preset times, the n openings are arranged in a multi-row multi-array, the moving punching process is spiral movement, and the previous opening position is not adjacent to the next opening position.

Optionally, n is greater than or equal to 10, and a and b are both less than or equal to one third of the corresponding preset times.

Alternatively, the sizes of the openings are the same, the sizes of a and b are the same, and the energy and the irradiation time of each laser irradiation are the same.

More optionally, the energy per laser irradiation is 0.2W-3W.

Optionally, the method of moving the previous hole location a times of laser irradiation and then moving the previous hole location b times of laser irradiation includes moving the substrate or moving the laser.

Optionally, the next hole position is moved to b laser shots and the hole position irradiated before is cooled.

More optionally, the method of cooling the previously irradiated open hole location includes natural cooling and/or purging with a cooling gas.

The application also provides a preparation method of the semiconductor device, which comprises the steps of preparing an opening on a substrate by adopting the laser opening method in any scheme, and then manufacturing a conductive structure in the opening.

Further, the preparation method of the semiconductor device is a device packaging method, comprising the steps of:

providing a support substrate;

forming a sacrificial layer on a support substrate;

forming a conductive interconnection layer on the sacrificial layer;

disposing a chip on the conductive interconnect layer;

forming a plastic sealing layer for coating the chip;

forming a rewiring layer on the surface of the chip, wherein the rewiring layer is electrically connected with the chip and the conductive interconnection layer;

forming an electrical lead-out structure on the rewiring layer;

removing the support substrate to expose the sacrificial layer;

preparing a plurality of openings in the sacrificial layer, wherein the openings expose the conductive interconnection layer, by using the laser opening method in any of the above schemes;

a conductive structure is formed in the opening in electrical contact with the conductive interconnect layer.

As described above, the laser drilling method and the preparation method of the semiconductor device provided by the application have the following beneficial effects: the improved flow design of the application can effectively avoid the heat accumulation effect generated by continuous laser irradiation of a single opening in a short time on the premise of ensuring that the size of the opened hole is consistent with that of the hole before optimization, can avoid the defects of deformation of the opening, layering of the subsequent process and the like, and is beneficial to improving the production yield.

Drawings

Fig. 1 is a schematic process diagram of a laser drilling method according to an embodiment of the application.

Fig. 2 is a schematic process diagram of another embodiment of the laser drilling method according to the present application.

Fig. 3 is a schematic view showing a substrate provided in the method for manufacturing a semiconductor device according to the present application.

Fig. 4 is a schematic diagram illustrating a sacrificial layer formed on a substrate in the method for manufacturing a semiconductor device according to the present application.

Fig. 5 is a schematic view showing a process for forming a conductive interconnect layer in the method for manufacturing a semiconductor device according to the present application.

Fig. 6 is a schematic diagram showing chip bonding in the method for manufacturing a semiconductor device according to the present application.

Fig. 7 is a schematic diagram illustrating a molding layer formed in the method for manufacturing a semiconductor device according to the present application.

Fig. 8 is a schematic diagram of a surface planarization process performed on a plastic sealing layer in the method for manufacturing a semiconductor device according to the present application.

Fig. 9 is a schematic view showing formation of a rewiring layer in the method for manufacturing a semiconductor device according to the present application.

Fig. 10 is a schematic diagram showing formation of an electrical extraction structure in the method for manufacturing a semiconductor device according to the present application.

Fig. 11 is a schematic view showing a substrate removal process in the method for manufacturing a semiconductor device according to the present application.

Fig. 12 is a schematic view showing an opening formed in a sacrificial layer in the method for manufacturing a semiconductor device according to the present application.

Detailed Description

Other advantages and effects of the present application will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present application with reference to specific examples. The application may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present application. As described in detail in the embodiments of the present application, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present application. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.

For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present.

In the context of the present application, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present application by way of illustration, and only the components related to the present application are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex. In order to make the illustration as concise as possible, not all structures are labeled in the drawings.

The existing laser perforation method is to continuously irradiate laser on the same perforation position until the production of the through holes with the required size is completed, and then continuously irradiate the next hole position for processing, and the like until the production of all the through holes is completed. The inventor has found through extensive research that this method can lead to less energy accumulation and dissipation in the irradiation process, resulting in heat accumulation effect and affecting device performance. In this regard, the inventors of the present application have made extensive studies and have proposed an improvement.

Specifically, the present embodiment provides a laser drilling method, including: taking n opening positions 11 to be processed and prepared on a substrate as a group, and starting laser irradiation opening after positioning the opening positions 11 and setting the laser irradiation positions of the opening positions 11. In the process of perforating, the previous perforating position 11 is subjected to a laser irradiation and then is moved to the next perforating position 11 to be subjected to b laser irradiation, and the laser irradiation is sequentially carried out until all perforating positions 11 in the group are subjected to laser irradiation for preset times until the laser irradiation energy of each perforating position 11 reaches a preset value, so that through holes with required sizes are machined in each perforating position 11, wherein the preset times are the total laser irradiation times required for completing the perforating of the corresponding perforating position 11, the energy preset value is the total laser energy value required for completing the perforating of the corresponding perforating position 11, n is an integer greater than or equal to 3, and a and b are integers smaller than the corresponding preset times. And preferably, the difference between a and b and the corresponding preset times is more than or equal to 3. That is, in this embodiment, the laser irradiation is performed at intervals of a plurality of times for each opening position 11, and the energy of each laser irradiation for a single opening position 11 is smaller than the total energy required for forming an opening of a desired size, and the preparation of each opening is completed after the plurality of times of irradiation at intervals. In the process of performing laser irradiation on the next position after the laser irradiation on the previous opening position 11 is completed, heat generated by the laser irradiation in the previous opening position 11 can be released, and heat accumulation is avoided. In addition, in this embodiment, the n openings are arranged in a multi-row and multi-column (the number of rows and the number of columns are all preferably greater than or equal to 3) array, the moving and punching process is spiral movement, and the position of the previous opening and the position of the next opening are not adjacent, so as to avoid the thermal interference of the adjacent openings to the greatest extent, and improve the heat accumulation effect.

The improved flow design of the laser drilling method provided by the application can effectively avoid the heat accumulation effect generated by continuous laser irradiation of a single hole in a short time on the premise of ensuring that the size of the hole to be drilled is consistent with that of the hole before optimization, can avoid the defects of deformation of the hole, layering of the subsequent process and the like, and is beneficial to improving the production yield.

In principle, each hole location 11 is transferred to the next hole location 11 after a laser shots are completed, and the hole locations 11 before that have time to emit heat, so that heat accumulation can be avoided. And theoretically, the longer the interval is, the more sufficient the heat is dissipated, the better the effect is. However, the inventors have found in practice that the interval between several laser shots at the same aperture location 11 is not to be too long or too short. Too short results in insufficient heat dissipation, too long results in too long a movement path, and the alignment requirements for the equipment are very high. The inventors have found through a lot of experiments that n is preferably 10 or more, and a and b are preferably one third or less of the preset number of times. In this embodiment, the sizes of all openings in the same group may be the same or different, and accordingly, the total energy of laser irradiation required to complete the preparation of each opening may be the same or different. The laser irradiation preset times of different openings can be the same or different. However, in order to simplify the process, it is preferable that the sizes of the openings be the same, and the laser irradiation preset times be the same for each of the openings. For example, in a preferred embodiment, n is 25, a and b are 1, and the predetermined number of laser shots for each aperture is 6, i.e. each aperture position 11 requires 6 laser shots, e.g. 6 single pulse shots. Specifically, the spot of the laser irradiation at each opening position 11 is the same and is approximately equal to half the size of each opening. The laser irradiation positions of each of the opening positions 11 are distributed in a central symmetry along the center of each of the opening positions 11.

In the punching process, the adjacent hole positions 11 may be sequentially subjected to a single laser irradiation in the manner shown in fig. 1 (the numerals in fig. 1 indicate the laser irradiation ordinal numbers). For example, the first hole location 11 is irradiated with the first laser, then the second adjacent hole location 11 is irradiated with the second laser, then the third hole location 11 is irradiated with the third laser, then the first hole location 11 is irradiated with the fourth laser, the third hole location 11 is irradiated with the fifth laser … …, and so on, until the number of times of laser irradiation on all the hole locations 11 reaches the corresponding preset number of times, and the preparation of all the holes is completed. Although this approach can improve thermal effect accumulation to a great extent, as device integration increases, the distribution of openings becomes increasingly dense and the spacing between adjacent openings becomes smaller. Thus, in the preferred embodiment provided by the application, after the previous aperture position 11 is irradiated with the laser, it is preferable to move to the next aperture position 11 not adjacent thereto for laser irradiation so as to minimize thermal crosstalk.

The array arrangement of the single set of openings may be as desired, such as according to the device layout. For example, in one example, as shown in fig. 2 (the arrow in fig. 2 indicates the general direction of movement during the moving perforation), n holes are arranged in an array of 5X5, the moving perforation is a spiral movement, and the former hole position 11 and the latter hole position 11 are not adjacent, for example, are separated by more than one hole position 11. The jump type moving punching mode can effectively avoid thermal crosstalk of different areas, and the stepping type mode is helpful for ensuring moving and aligning accuracy. Meanwhile, the layout of through holes, such as capacitor holes, in the semiconductor device mostly adopts array arrangement, such as hexagonal array arrangement, so that the laser hole opening mode of the embodiment is highly matched with the layout of the device, and the hole opening yield is guaranteed.

In the case where the total irradiation energy of each aperture position 11 reaches a preset value, the energy and irradiation time of each laser irradiation may be the same or different. In a preferred example, however, the energy and irradiation time of each laser irradiation are the same. This can reduce the work of adjusting the technological parameters of the equipment and improve the production efficiency.

The total energy of laser irradiation and the energy of single laser irradiation at each aperture position 11 may be determined as needed, for example, according to conditions such as aperture size, substrate material, and laser device model. In a preferred example, however, the energy per laser shot is 0.2W-3W, which minimizes heat build-up while ensuring good hole opening.

In one example, the method of moving the previous hole site 11 a times of laser irradiation and then moving the next hole site 11 b times of laser irradiation is to move the substrate. I.e. the laser irradiation position remains unchanged, after the first irradiation of the previous hole site 11, the substrate is moved so that the second hole site 11 is in the laser irradiation position, and so on.

In another embodiment, the method of moving the previous hole position 11 a times of laser irradiation and then moving the next hole position 11 b times of laser irradiation is to move the laser. That is, the substrate is kept still, and after the laser irradiation at the previous hole position 11 is completed, the device is moved so that the laser is positioned above the corresponding next hole position 11.

In another example, a device capable of emitting a plurality of laser beams may be selected, wherein the positions of the laser beams correspond to the respective hole positions 11, and laser above the corresponding hole positions 11 is gradually opened for irradiation during the punching process. This approach does not require moving the substrate or equipment, and ensures good alignment, with only high equipment requirements.

In the present embodiment, the laser pulses used are of ns order, and the interval between each laser beam and the second laser beam is only ns (10 ^-9 Second). If the traditional processing mode of continuously carrying out laser irradiation on the same hole is adopted, the heat effect accumulation is very serious, and the actual product is damaged. Therefore, the inventor makes a great deal of researches to develop the scheme, and moves the previous hole position to b times of laser irradiation on the next hole position after a times of laser irradiation on the previous hole position, and naturally cools the previous hole position in the process of laser irradiation on the next hole position, so that the aim of avoiding heat effect accumulation caused by continuous processing is achieved. The natural cooling method is adopted without additional cooling equipment, and the operation is simple.

In another embodiment, to accelerate the heat dissipation from the previous irradiation position, a cooling medium may be introduced to accelerate the cooling of the irradiated hole positions 11 while moving to laser irradiation of the next hole position 11. Or in addition to conventional natural cooling, a cooling medium is introduced to accelerate cooling of the irradiated open-pore locations 11. The method of performing the accelerated cooling may be a method of purging with a cooling gas, or may be a method of performing the cooling with a cooling plate having a structure similar to the size of the opening. For example, a plurality of columnar structures with the size similar to that of the opening are arranged on the cooling plate, and when laser irradiation is carried out on the next opening position, the columnar structures of the cooling plate are contacted with the previous irradiation position to realize accurate heat dissipation and cooling. In the case of cooling with a cooling gas, to avoid the cooling gas interfering with the laser irradiation at other locations (e.g., to avoid laser disturbance due to gas flow), a device such as a collimator may be used to precisely direct the cooling gas to the aperture location 11 where cooling is desired. The gas is utilized to sweep and cool, so that the cleaning effect can be achieved, and the punching yield can be improved. Further, in some examples, it is possible to detect whether the previous irradiation meets the criterion, for example, whether the irradiation position is accurate or not, or the like, simultaneously with cooling the previous hole position 11 without additionally increasing the detection time.

The application also provides a preparation method of the semiconductor device, which comprises the steps of preparing a through hole on a substrate by adopting the laser perforation method in any scheme, and then manufacturing a conductive structure in the through hole. The foregoing description of the laser drilling method may be referred to herein in its entirety and is not repeated for the sake of brevity.

As an example, a method of fabricating a conductive structure in a via hole may employ a metal filling method such as an electroplating method, a physical vapor deposition method, or the like. In other examples, already fabricated conductive structures may be disposed within the via, such as by passing conductive lines, such as copper lines, through the via to electrically connect device structures located at both ends of the via.

The preparation method of the semiconductor device can be used for manufacturing various types of contact holes in the front-end chip manufacturing process. The method for manufacturing a semiconductor device according to the present application is particularly suitable for manufacturing an interconnection via hole in a package substrate in a back-end packaging process, and a back-end packaging method using the laser drilling method according to the present application will be described in detail with reference to the accompanying drawings.

Specifically, the method for manufacturing the semiconductor device provided in the present embodiment includes the steps of:

first, as shown in fig. 3, a support substrate 12 is provided, and the support substrate 12 may be a semiconductor material such as a silicon wafer, a glass substrate, a metal substrate, or a substrate of other materials, or may be a composite substrate. In a preferred example, the support substrate 12 is a transparent substrate, such as a glass substrate, which will facilitate subsequent peeling. After the support substrate 12 is provided, cleaning may be performed to remove contamination from the surface of the support substrate 12.

Then, a sacrificial layer 13 is formed on the surface of the support substrate 12, resulting in the structure shown in fig. 4. The sacrificial layer 13 may be a single-layer or multi-layer structure. For example, in one example, the sacrificial layer 13 includes a photo-thermal conversion material layer on the surface of the support substrate 12 and a polymer material layer such as an epoxy resin layer on the surface of the photo-thermal conversion material layer, or may be an inorganic material layer such as a silicon oxide layer. Methods of forming the sacrificial layer 13 include, but are not limited to, a coating method and a chemical vapor deposition method.

A conductive interconnect layer 14 is then formed over the sacrificial layer 13, resulting in the structure shown in fig. 5. The conductive interconnect layer 14 may be a single metal line layer. In a preferred example, the conductive interconnect layer 14 includes a dielectric layer and a metal line layer disposed within the dielectric layer and on a surface of the dielectric layer, and may further include a conductive post disposed over and electrically connected to the metal line layer. The conductive pillars are, for example, copper pillars. The structure of the conductive interconnect layer 14 is not limited thereto, and is not strictly limited thereto.

Next, the chip 15 is disposed, for example, the chip 15 is adhered to the conductive interconnect layer 14 with a non-functional surface through an adhesive material, so as to obtain a structure as shown in fig. 6, and the functional surface (i.e., the pad surface) of the chip 15 is away from the conductive interconnect layer 14. As an example, the non-functional surface of the chip 15 is formed with an adhesive material layer in advance by a back-bonding process, and the chip 15 is adhered to the conductive interconnect layer 14 by the adhesive material layer. The number of the chips 15 may be single or plural, and when plural, the plural chips 15 may be arranged at intervals on the same plane or stacked one on top of the other. The chip 15 may be various types of active and/or passive devices. In other embodiments, die 15 is soldered to conductive interconnect layer 14, conductive interconnect layer 14 is exposed at a location of conductive interconnect layer 14 corresponding to the soldered die 15, and conductive interconnect layer 14 is electrically connected to die 15 by soldering. After the chip 15 is bonded to the conductive interconnect layer 14, the chip 15 may be underfilled, and the electrical connection between the chip 15 and the conductive interconnect layer 14 is covered with a polymer material such as epoxy, so as to avoid moisture infiltration and contamination. In yet another embodiment, the chip 15 is pre-formed with TSV vias (not shown), through which the pads of the functional side of the chip 15 are connected to its non-functional side. In this manner, electrical connection between the conductive interconnect layer 14 and the re-routing layer 17 formed in a subsequent process step may be directly achieved through TSV vias in the chip 15.

And then plastic packaging is carried out. The plastic layer 16 covering the die 15 and the conductive interconnect layer 14 may be formed, for example, by a combination of one or more of compression molding, transfer molding, liquid encapsulation, vacuum lamination, spin coating, etc., to provide the structure shown in fig. 7, followed by a planarization process, including but not limited to chemical mechanical polishing, to expose the top surface of the die 15, to provide the structure shown in fig. 8.

A re-wiring layer 17 electrically connected to the chip 15 and the conductive interconnect layer 14 is then formed over the molding layer 16, resulting in the structure shown in fig. 9. The rewiring layer 17 may be of a single-layer or multi-layer structure, and is not particularly limited.

Next, an electrical lead-out structure 18 electrically connected to the rewiring layer 17 is formed, for example, by performing a ball-mounting process, resulting in the structure shown in fig. 10.

Next, the structure obtained by completing the fabrication of the electrical lead-out structure 18 is inverted on the carrier plate 19. That is, the entire structure shown in fig. 10 is placed on the carrier 19 with the electrical lead-out structure 18 facing downward, and then the package substrate is removed to expose the sacrificial layer 13, resulting in the structure shown in fig. 11. The carrier 19 includes, but is not limited to, a metal plate, and the structure obtained in the previous step may be fixed on the carrier 19 by means of a fixing member such as a fixing ring. The method of removing the package support substrate 12 may be an etching method, a surface planarization method, or the like. In a preferred example, in the case where the sacrificial layer 13 includes a light-heat conversion material layer, a laser irradiation method may be used in this step, so that the package substrate is peeled from the light-heat conversion layer until the polymer layer such as the epoxy layer in the sacrificial layer 13 is exposed.

Then, a plurality of openings 20 exposing the conductive interconnect layer 14 are formed in the sacrificial layer 13 by using the laser opening method described in any of the foregoing schemes, resulting in the structure shown in fig. 12.

After forming the openings 20, conductive structures (not shown) are formed in the openings 20 that are in electrical contact with the conductive interconnect layer 14. For example, a ball-mounting process may be used to form solder balls (not shown) in the openings that are electrically connected to the conductive interconnect layer 14, a physical vapor deposition process may be used to form conductive pillars (not shown) in the openings 20 that are electrically connected to the conductive interconnect layer 14, or a substrate that has been prepared with a conductive structure may be bonded to the structure shown in fig. 12, and then the carrier 19 may be removed.

The method for manufacturing a semiconductor device according to this embodiment is particularly suitable for wafer level packaging, that is, hundreds of thousands of structures shown in fig. 12 are manufactured on the same wafer at the same time, and then dicing is performed, and the individual structures obtained by dicing are respectively connected to a packaging frame, which is not developed in detail.

In summary, the laser hole opening method provided by the application comprises the following steps: taking n opening positions to be processed and prepared on a substrate as a group, carrying out laser irradiation for a time on a previous opening position, then moving to carry out laser irradiation for b time on a next opening position, and sequentially moving until all opening positions of the group are subjected to laser irradiation for preset times to process through holes with required sizes at all opening positions, wherein the preset times are the total number of laser irradiation required for completing opening at the corresponding opening position, n is an integer greater than or equal to 3, a and b are integers less than the corresponding preset times, the n openings are arranged in a multi-row multi-array, the moving punching process is spiral movement, and the previous opening position is not adjacent to the next opening position. The application can effectively avoid the heat accumulation effect generated by continuous laser irradiation of a single open pore in a short time on the premise of ensuring that the size of the open pore is consistent with that of the pore before optimization, can avoid the defects of open pore deformation, layering of the subsequent process and the like, and is beneficial to improving the production yield. Therefore, the application effectively overcomes various defects in the prior art and has high industrial utilization value.

The above embodiments are merely illustrative of the principles of the present application and its effectiveness, and are not intended to limit the application. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the application. Accordingly, it is intended that all equivalent modifications and variations of the application be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims

1. A laser drilling method, characterized in that the laser drilling method comprises:

taking n opening positions to be processed and prepared on a substrate as a group, carrying out laser irradiation for a time on a previous opening position, then moving to carry out laser irradiation for b time on a next opening position, and sequentially moving until all opening positions of the group are subjected to laser irradiation for preset times to process through holes with required sizes at all opening positions, wherein the preset times are the total number of laser irradiation required for completing opening at the corresponding opening position, n is an integer greater than or equal to 3, a and b are integers less than the corresponding preset times, the n openings are arranged in a multi-row multi-array, the moving punching process is spiral movement, and the previous opening position is not adjacent to the next opening position.

2. The laser drilling method of claim 1, wherein n is 10 or more and each of a and b is one third or less of a corresponding predetermined number of times.

3. The method of claim 1, wherein the openings are the same size, a and b are the same size, and the energy and time of each laser irradiation are the same.

4. A laser drilling method according to claim 3, wherein the energy of each laser irradiation is 0.2W-3W.

5. The laser drilling method of claim 1, wherein the method of moving a laser shots from a previous drilling position to b laser shots from a next drilling position comprises moving the substrate or moving the laser.

6. A laser drilling method according to any one of claims 1 to 5, characterized in that the previously irradiated drilling position is cooled while moving to b laser shots of the next drilling position.

7. The laser drilling method according to claim 6, wherein the method of cooling the previously irradiated drilling position includes a natural cooling method and/or a method of purging with a cooling gas.

8. A method of manufacturing a semiconductor device, comprising the steps of forming an opening in a substrate by the laser opening method according to any one of claims 1 to 7, and then forming a conductive structure in the opening.

9. The method of manufacturing a semiconductor device according to claim 8, wherein the method of manufacturing a semiconductor device is a device packaging method, comprising the steps of: