CN116564858A - Plasma implanter and plasma implantation method - Google Patents

Plasma implanter and plasma implantation method Download PDF

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Publication number
CN116564858A
CN116564858A CN202310610468.1A CN202310610468A CN116564858A CN 116564858 A CN116564858 A CN 116564858A CN 202310610468 A CN202310610468 A CN 202310610468A CN 116564858 A CN116564858 A CN 116564858A
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Prior art keywords
ionized
gas
electrons
plasma
ionization chamber
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CN202310610468.1A
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Inventor
张浩楠
孟宪宇
张全飞
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GTA Semiconductor Co Ltd
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GTA Semiconductor Co Ltd
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Priority to CN202310610468.1A priority Critical patent/CN116564858A/en
Publication of CN116564858A publication Critical patent/CN116564858A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

The application provides a plasma implanter and a plasma implantation method, wherein the plasma implanter comprises an ionization chamber for ionizing gas to be ionized into electrons; the gas supply system is used for conveying gas to be ionized to the ionization chamber through a gas supply pipeline; and the heating device is arranged between the air supply system and the ionization chamber and is used for providing heat for the gas to be ionized. Wherein, before the gas to be ionized enters the ionization chamber, the heating device obtains initial energy for outer electron of the gas to be ionized so as to increase the speed of ionization electron of the ionization chamber. Embodiments of the present disclosure may increase the rate of ionized electrons, and may result in more electrons. Compared with the prior art, the method shortens the time for ionizing the inert gas, increases the number of electrons ionized in the same time, correspondingly reduces the flow rate of the inert gas or the filament voltage increased for achieving the number of ionized electrons, and further increases the service life of the ion implantation pulse electric field.

Description

Plasma implanter and plasma implantation method
Technical Field
The present application relates to the field of semiconductor manufacturing technology, and in particular, to a plasma implanter and a plasma implantation method.
Background
The semiconductor doping process is usually accelerated and guided by a plasma implanter, ions to be doped are incident into a wafer material in the form of an ion beam, and atoms or molecules in the ion beam and the material undergo a series of physicochemical reactions to finally stay in the material, so that the optimization or change of the surface property of the material is realized.
In general, the plasma injection adopts filament heating or microwave mode to bombard the outer electrons of inert gas so as to separate from atomic nuclei into free electrons, and then sprays the free electrons into beam current to neutralize the positive ions, so that positive potential accumulation is reduced when the beam current is injected into a wafer, and damage to the wafer is reduced. However, the existing plasma shower technology can cause longer time for ionizing inert gas and fewer inert gas electrons are generated, so that the neutralization speed of beam particle beams is slower, and the quantity requirement of inert gas electrons in the process cannot be met. Or the electrons of the ionized inert gas are increased by increasing the flow of the inert gas or increasing the voltage on the filament, but the life cycle of the process of the plasma implanter is shortened.
Thus, a new plasma implantation scheme is needed.
Disclosure of Invention
In view of this, embodiments of the present disclosure provide a plasma implanter and a plasma implantation method for use in a semiconductor wafer doping process.
The embodiment of the specification provides the following technical scheme:
embodiments of the present specification provide a plasma implanter including
An ionization chamber for ionizing a gas to be ionized into electrons;
the gas supply system is used for conveying the gas to be ionized to the ionization chamber through a gas supply pipeline;
the heating device is arranged between the air supply system and the ionization chamber and is used for providing heat for the gas to be ionized;
wherein the heating device obtains initial energy for outer electrons of the gas to be ionized before the gas to be ionized enters the ionization chamber so as to increase the speed of ionized electrons of the ionization chamber.
In some alternatives, the heating means is fixed outside the gas supply duct close to the ionization chamber.
In some alternatives, the heating means comprises a heating bag and the gas to be ionized comprises an inert gas.
In some alternatives, the heating bag is made of a high temperature resistant material.
In some alternatives, the temperature of the heated pouch is greater than or equal to 200 ℃ and less than 400 ℃.
In some alternatives, the heating device is detachably disposed outside the air supply pipeline.
The embodiment of the specification also provides a plasma implantation method, which adopts the plasma implanter according to any one of the technical schemes, and comprises the following steps:
the gas supply system conveys the gas to be ionized through a gas supply pipeline;
the heating device provides heat for the gas to be ionized so as to enable electrons on the outer layer of the gas to be ionized to obtain initial energy;
the ionization chamber ionizes the gas to be ionized to obtain an initial energy.
In some embodiments, the plasma implantation method further includes:
the heating device provides heat for the gas to be ionized in a heat transfer mode.
Compared with the prior art, the beneficial effects that above-mentioned at least one technical scheme that this description embodiment adopted can reach include at least:
by adding a heating device which does not pollute the vacuum environment to endow the inert gas with initial energy, the inert gas outer electrons with initial energy in the embodiment of the specification are relatively easy to be impacted into free electrons under the constraint of atomic nuclei. Therefore, the speed of ionized electrons can be increased to obtain more electrons, the time for ionizing inert gas is shortened, the number of electrons ionized in the same time is increased, the flow of inert gas or filament voltage increased for achieving the number of ionized electrons can be correspondingly reduced, and the service life of the plasma injection pulse electric field is prolonged.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a prior art plasma implanter;
FIG. 2 is a schematic view of a partial structure of a plasma implanter according to the present application;
fig. 3 is a flow chart of a plasma implantation method of the present application.
Detailed Description
Embodiments of the present application are described in detail below with reference to the accompanying drawings.
Other advantages and effects of the present application will become apparent to those skilled in the art from the present disclosure, when the following description of the embodiments is taken in conjunction with the accompanying drawings. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the present application. The present application may be embodied or carried out in other specific embodiments, and the details of the present application may be modified or changed from various points of view and applications without departing from the spirit of the present application. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
It is noted that various aspects of the embodiments are described below within the scope of the following claims. It should be apparent that the aspects described herein may be embodied in a wide variety of forms and that any specific structure and/or function described herein is merely illustrative. Based on the present application, one skilled in the art will appreciate that one aspect described herein may be implemented independently of any other aspect, and that two or more of these aspects may be combined in various ways. For example, apparatus may be implemented and/or methods practiced using any number and aspects set forth herein. In addition, such apparatus may be implemented and/or such methods practiced using other structure and/or functionality in addition to one or more of the aspects set forth herein.
It should also be noted that the illustrations provided in the following embodiments merely illustrate the basic concepts of the application by way of illustration, and only the components related to the application are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated.
In addition, in the following description, specific details are provided in order to provide a thorough understanding of the examples. However, it will be understood by those skilled in the art that the present invention may be practiced without these specific details.
The existing plasma shower technology can cause longer time for ionizing inert gas and fewer inert gas electrons are generated, so that the neutralization speed of beam particle beams is slower, and the quantity requirement of inert gas electrons in the process cannot be met. As shown in fig. 1, an air supply system 10 supplies inert gas into an ionization chamber, and bombards outer electrons of the inert gas to be free electrons by heating filaments of a shower gun 20, and then sprays the free electrons to a wafer on a target 40 after neutralizing positive ions in an ion beam in a shielding case 30. The shower gun uses a power system 50 to heat the filament. However, this results in longer ionization times for the inert gas and fewer electrons being generated from the inert gas.
Even if the ionization of the inert gas electrons is increased by increasing the flow of the inert gas or increasing the voltage across the filament, this shortens the life cycle of the pulsed electric field (PEF, pulse Electric Field) of the plasma implanter.
Based on this, the embodiments of the present specification propose a new plasma implantation scheme: based on the existing plasma implanter, a heating device can be added, and the heating device is arranged between the air supply system and the ionization chamber. When the inert gas passes through the gas supply system and enters the ionization chamber, the heat generated by the heating device is absorbed through heat transfer, and the initial energy is given to the outer electrons of the inert gas, so that the electrons are easier to bombard after the inert gas enters the ionization chamber, the speed of ionized electrons is increased, and more electrons can be obtained. Therefore, the electron ionization of the inert gas is not needed to be increased by increasing the flow of the inert gas or increasing the voltage on the filament, and the life cycle of the pulsed electric field in the process of the plasma implantation process is prolonged. Compared with the prior art, the method shortens the time for ionizing the inert gas, increases the number of electrons ionized in the same time, correspondingly reduces the flow rate of the inert gas or the filament voltage increased for achieving the number of ionized electrons, and prolongs the service life of the PEF (Pulse Electric Field ) of the ion implanter.
The following describes the technical solutions provided by the embodiments of the present application with reference to the accompanying drawings.
As shown in fig. 1 and 2, the plasma implanter of the embodiments of the present specification includes an ionization chamber, an air supply system, and a heating device. Specifically, an ionization chamber is used for ionizing the gas to be ionized into electrons. The gas supply system is used for conveying the gas to be ionized to the ionization chamber through a gas supply pipeline. The heating device is arranged between the air supply system and the ionization chamber and is used for providing heat for the gas to be ionized. Wherein, before the gas to be ionized enters the ionization chamber, the heating device obtains initial energy for outer electron of the gas to be ionized so as to increase the speed of ionization electron of the ionization chamber. Wherein the gas to be ionized comprises an inert gas, such as Xe (xenon). Inert gases have very low ionization energy.
By arranging the heating device 60 between the air supply system 10 and the ionization chamber (corresponding chamber of the shower gun 20), heat generated by the heating device 60 is absorbed through heat transfer before the inert gas passes through the air supply system 10 and the ionization chamber, and initial energy is given to electrons on the outer layer of the inert gas, so that the heated inert gas is easier to bombard after being subjected to the ionization chamber, the speed of ionized electrons is increased, and more electrons are obtained to perform physical and chemical reactions with the wafer.
Therefore, the plasma implanter of the embodiments of the present disclosure can reduce the time for ionization of the inert gas, shorten the time for ionization of the inert gas, and increase the number of electrons ionized in the same time, as compared to the prior art tools. Compared with the prior art that the flow rate of inert gas or the filament voltage is increased for achieving the number of ionized electrons, the embodiment of the specification does not need to increase inert gas or filament voltage, and further the service life of the pulse electric field of the ion implanter is prolonged.
In some embodiments the heating means is fixed outside the gas supply duct close to said ionization chamber.
As shown in FIG. 2, a heating device is additionally arranged at the rear section of the air supply system before entering the ionization chamber, the heating device is fixedly arranged at the outer side of the air supply pipeline, a layer of heating bag is wrapped at the outer side of the tail end of the air supply pipeline in some embodiments, inert gas in the pipeline is heated in a heat transfer mode, the outer layer of electrons is endowed with initial kinetic energy, and thus the heated inert gas is easier to bombard after entering the reaction chamber, the speed of ionized electrons is increased, and more electrons can be obtained.
Therefore, the plasma implanter of the embodiments of the present disclosure can reduce the time for ionization of the inert gas, shorten the time for ionization of the inert gas, and increase the number of electrons ionized in the same time, as compared to the prior art tools. Compared with the prior art that the flow rate of inert gas or the filament voltage is increased for achieving the number of ionized electrons, the embodiment of the specification does not need to increase inert gas or filament voltage, and further the service life of the pulse electric field of the ion implanter is prolonged.
In some embodiments, the heating device comprises a heating pouch.
Since the plasma injection process cannot pollute the vacuum environment, the heating device cannot heat by using an electrode for exciting hot electrons, and the heating device 60 comprises a heating bag 61, and a layer of heating bag 61 (refer to fig. 2) is wrapped on the outer side of the air supply pipeline, so that inert gas in the pipeline is heated in a heat transfer mode, and initial kinetic energy is given to outer electrons. The electrons are more easily bombarded after the heated inert gas enters the ionization chamber, so that the speed of the ionized electrons is increased, and more electrons can be obtained. In some embodiments the heating pouch may be heated using a power source.
In some embodiments the temperature of the heating bag is greater than or equal to 200 ℃ and less than 400 ℃. The heating bag is made of high temperature resistant material.
In combination with the whole structure of the embodiment, the temperature of the heating bag cannot be too high or too low in order to not pollute the vacuum environment of electron ionization. The temperature is set to be more than or equal to 200 ℃ and less than 400 ℃ and is fixed at the tail end of the inert gas supply pipeline, if the temperature of the heating bag is too high, the metal pipeline ionizes inert gas in advance, and the quantity of electrons ionized by the final ionization chamber is influenced, so that the temperature of the heating bag is insufficient to cause the metal structure of the gas supply system pipeline to excite hot electrons. Therefore, the temperature of the gas can be raised in a thermal ionization mode, so that electrons on the outer layer of the inert gas have energy which is initially separated from the constraint of atomic nuclei, electrons on the outer layer of the inert gas are more easily bombarded by electrons thermally excited by the cathode, the time for ionizing the inert gas is shortened, more electrons are generated, and the flow rate of the inert gas or the filament voltage which needs to be increased can be reduced.
In some embodiments, the heating device is removably disposed outside the air supply duct.
In combination with the above embodiments, the heating device according to the embodiments of the present disclosure may be detachably disposed outside the air supply pipe. Therefore, the heating device realizes convenient disassembly and convenient maintenance. Specifically, a layer of heating bag is wrapped on the outer side of the air supply pipeline before entering the ionization chamber at the rear section of the air supply system, and the heating bag is detachably arranged.
Therefore, the plasma implanter of the embodiments of the present disclosure can reduce the time for ionization of the inert gas, shorten the time for ionization of the inert gas, and increase the number of electrons ionized in the same time, as compared to the prior art tools. Compared with the prior art that the flow rate of inert gas or the filament voltage is increased for achieving the number of ionized electrons, the embodiment of the specification does not need to increase inert gas or filament voltage, and further the service life of the pulse electric field of the ion implanter is prolonged.
In combination with the above-mentioned plasma implanter, fig. 3 provides a plasma implantation method, and as shown in fig. 3, the plasma implantation method according to the embodiment of the present disclosure includes steps S310 to S330. Wherein, in step S310, the gas supply system conveys the gas to be ionized through the gas supply pipe. In step S320, the heating device provides heat to the gas to be ionized, so that electrons on the outer layer of the gas to be ionized obtain initial energy. Step S330, the ionization chamber ionizes to obtain the gas to be ionized with initial energy.
With the plasma implanter of the above embodiment, the inert gas passes through the gas supply system of the room temperature vacuum environment, and the gas supply system delivers the gas to be ionized through the gas supply pipeline. At this time, the outer electrons in the inert gas have no energy. But the initial energy of electrons outside the inert gas can be obtained after continuing to pass through the added heating device. The initial energy still does not allow the outer electrons to break free from the confinement of the nuclei.
And further the inert gas, which has acquired the initial energy, is continuously delivered to the ionization chamber. The inert gas with initial kinetic energy is continuously conveyed to the ionization chamber, and then the inert gas molecules are bombarded by secondary electrons generated by the impact of hot electrons excited by the cathode on the metal cover after the ionization chamber. Compared with inert gas outer electrons without initial energy in the prior art, the inert gas outer electrons with initial kinetic energy in the embodiment of the specification are relatively easy to be impacted into free electrons under the constraint of atomic nuclei. The rate of ionized electrons can be increased and more electrons can be obtained. Compared with the prior art, the method shortens the time for ionizing the inert gas, increases the number of electrons ionized in the same time, correspondingly reduces the flow rate of the inert gas or the filament voltage increased for achieving the number of ionized electrons, and further increases the service life of the ion implantation pulse electric field.
In some embodiments, the heating means provides heat to the gas to be ionized by means of heat transfer.
In combination with the above embodiment, the vacuum environment of plasma implantation is not polluted, and the added heating device provides heat for the gas to be ionized in a heat transfer mode. The inert gas in the pipeline of the air supply system is heated in a heat transfer mode to endow the outer layer of electrons with initial kinetic energy, and the initial kinetic energy cannot break away the binding of atomic nuclei of the outer layer of electrons, so that the metal structure of the pipeline of the air supply system is insufficient to excite hot electrons.
And then the inert gas molecules are bombarded by secondary electrons generated by the impact of cathode-excited hot electrons on the metal cover after entering the ionization chamber. Compared with the inert gas outer electron without initial kinetic energy in the prior art, the inert gas outer electron with initial kinetic energy in the embodiment of the specification is relatively easy to be impacted into free electrons under the constraint of atomic nuclei. The rate of ionized electrons can be increased and more electrons can be obtained. Compared with the prior art, the method shortens the time for ionizing the inert gas, increases the number of electrons ionized in the same time, correspondingly reduces the flow rate of the inert gas or the filament voltage increased for achieving the number of ionized electrons, and further increases the service life of the ion implantation pulse electric field.
It is noted that the terms "first," "second," "third," "fourth," and the like in the description and claims of the invention and in the foregoing figures, if any, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein.
The same and similar parts of the embodiments in this specification are all mutually referred to, and each embodiment focuses on the differences from the other embodiments. In particular, for the product embodiments described later, since they correspond to the methods, the description is relatively simple, and reference is made to the description of parts of the system embodiments.
The foregoing is merely specific embodiments of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions easily conceivable by those skilled in the art within the technical scope of the present application should be covered in the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (8)

1. A plasma implanter, the plasma implanter comprising:
an ionization chamber for ionizing a gas to be ionized into electrons;
the gas supply system is used for conveying the gas to be ionized to the ionization chamber through a gas supply pipeline;
the heating device is arranged between the air supply system and the ionization chamber and is used for providing heat for the gas to be ionized;
wherein the heating device obtains initial energy for outer electrons of the gas to be ionized before the gas to be ionized enters the ionization chamber so as to increase the speed of ionized electrons of the ionization chamber.
2. The plasma implanter according to claim 1, wherein the heating device is affixed outside of a gas supply conduit proximate the ionization chamber.
3. The plasma implanter according to claim 1, wherein the heating device comprises a heating bag and the gas to be ionized comprises an inert gas.
4. The plasma implanter according to claim 3, wherein the heater bag is made of a high temperature resistant material.
5. The plasma implanter according to claim 3, wherein the temperature of the heated bag is greater than or equal to 200 ℃ and less than 400 ℃.
6. The plasma implanter according to claim 1, wherein the heating device is removably disposed outside the gas supply conduit.
7. A plasma implantation method, characterized in that a plasma implanter according to any of claims 1-6 is used, comprising the steps of:
the gas supply system conveys the gas to be ionized through a gas supply pipeline;
the heating device provides heat for the gas to be ionized so as to enable electrons on the outer layer of the gas to be ionized to obtain initial energy;
the ionization chamber ionizes the gas to be ionized to obtain an initial energy.
8. The plasma implantation method according to claim 7, further comprising:
the heating device provides heat for the gas to be ionized in a heat transfer mode.
CN202310610468.1A 2023-05-26 2023-05-26 Plasma implanter and plasma implantation method Pending CN116564858A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310610468.1A CN116564858A (en) 2023-05-26 2023-05-26 Plasma implanter and plasma implantation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310610468.1A CN116564858A (en) 2023-05-26 2023-05-26 Plasma implanter and plasma implantation method

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CN116564858A true CN116564858A (en) 2023-08-08

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