CN116497453A - Hot pressing device applied to seed crystal bonding and seed crystal bonding method - Google Patents
Hot pressing device applied to seed crystal bonding and seed crystal bonding method Download PDFInfo
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- CN116497453A CN116497453A CN202310506982.0A CN202310506982A CN116497453A CN 116497453 A CN116497453 A CN 116497453A CN 202310506982 A CN202310506982 A CN 202310506982A CN 116497453 A CN116497453 A CN 116497453A
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- seed crystal
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- 239000013078 crystal Substances 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000007731 hot pressing Methods 0.000 title claims description 25
- 238000003825 pressing Methods 0.000 claims abstract description 18
- 239000003292 glue Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 4
- 229910001369 Brass Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010951 brass Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000005056 compaction Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000007770 graphite material Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 239000004484 Briquette Substances 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 5
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The application relates to a be applied to seed crystal bonding's hot press unit and seed crystal bonding method in carborundum new material technical field, hot press unit includes: a base, wherein a first annular groove is formed on one side of the base, and the base is positioned in an area surrounded by the first annular groove to form a bearing surface of seed crystal; the positioning ring is provided with a connecting end at one end, and the connecting end is matched with the first annular groove; and the pressing block is matched with the inner ring of the positioning ring, and one side of the pressing block forms a contact surface of the seed crystal. The hot press device can gradually discharge bubbles in the seed crystal bonding glue from the center to the periphery, and enables the seed crystal to be pressed in a balanced mode, so that bonding results of high flatness are achieved for the seed crystal relative base and the seed crystal, and the seed crystal can be subjected to subsequent crystal growth in a flatter mode.
Description
Technical Field
The application relates to the technical field of new silicon carbide materials, in particular to a hot pressing device applied to seed crystal bonding and a seed crystal bonding method.
Background
The third generation wide band gap semiconductor material represented by silicon carbide (SiC) is the core for developing high-power, high-frequency and high-temperature, strong-radiation-resistant blue laser, ultraviolet detector and other technologies. At present, a physical vapor transport method is generally adopted for growing silicon carbide, namely raw materials are heated and sublimated into vapor phase substances in a thermal field, and the vapor phase substances move upwards under the action of a temperature gradient until the vapor phase substances meet the surface of a seed crystal with low temperature and lattice adaptation, so that crystals are crystallized and grown on the surface of the seed crystal.
There are many factors affecting the growth of silicon carbide single crystals, of which the seed crystal is the key factor. Typically, the SiC seed crystal is secured by bonding the seed crystal to the crucible cover with a bonding agent, then pressing the seed crystal against the seed crystal face with a weight, and flattening the seed crystal in a vacuum hot-press environment to cause the seed crystal to bond as flat as possible to the crucible cover. However, the method generally causes insufficient flatness of the wafer due to uneven stress of the seed wafer and bubbles existing in the bonding process of the seed wafer, and cracks and even chipping of the wafer can be caused by uneven stress under severe conditions. The defect of flatness can seriously affect the quality of the subsequent crystal growth process.
Disclosure of Invention
In view of the problems existing in the background art, the application provides a hot pressing device applied to seed crystal bonding, which can improve the bonding effect of seed crystals and enable the seed crystals to carry out the subsequent crystal growth in a smoother mode.
According to an aspect of the present invention, there is provided a hot press apparatus for seed crystal bonding, comprising: a base, wherein a first annular groove is formed on one side of the base, and the base is positioned in an area surrounded by the first annular groove to form a bearing surface of seed crystal; the positioning ring is provided with a connecting end at one end, and the connecting end is matched with the first annular groove; and the pressing block is matched with the inner ring of the positioning ring, and one side of the pressing block forms a contact surface of the seed crystal.
Through using the hot press device in this technical scheme, with the holding ring suit on the base, make the axis perpendicular to the loading surface of base of holding ring, afterwards, evenly scribble bonding glue on the loading surface of base, place the seed crystal on bonding glue level, slowly insert the holding ring and place the briquetting on the seed crystal by the one end of contact surface, make contact surface and seed crystal lean on, and there is not obvious gap between briquetting and the holding ring, thereby under the environment of the vacuum hot pressing of follow-up hot pressing process, through the holding ring and cooperate the self weight of briquetting, restrict the briquetting and take place tiny displacement, make the pressure that the briquetting pressed on the seed crystal more balanced, both can reduce the seed crystal and produce the possibility of crackle even chipping because of the atress is uneven, can obtain the bonding result that seed crystal relative base and seed crystal all reach high flatness by oneself under the balanced pressurized condition of seed crystal again, make can carry out the long brilliant of the next step with more level mode.
In addition, the hot press device according to the application can also have the following additional technical characteristics:
in some embodiments of the invention, the thermal conductivity of the compact at least near one end of the contact surface tapers from the center to the edge.
In some embodiments of the invention, the compact is a metal material and the base is a graphite material.
In some embodiments of the invention, the compact includes a substrate and a thermally conductive layer attached to one end of the substrate;
the contact surface is one side of the heat conduction layer far away from the substrate;
the heat conductivity coefficient of the matrix is smaller than that of the heat conducting layer;
the heat conductivity coefficient of the heat conducting layer gradually decreases from the center to the edge.
In some embodiments of the invention, the substrate has a thermal conductivity of 14.7 to 15.2W/m.k and the thermally conductive layer has a thermal conductivity of 100 to 400W/m.k.
In some embodiments of the invention, the heat conducting layer comprises a central circular plate, a first annular plate sleeved on the central circular plate and a second annular plate sleeved on the first annular plate;
the central circular plate is made of pure copper, and the heat conductivity coefficient is 398W/m.k;
the first annular plate is made of pure aluminum, and the heat conductivity coefficient is 236W/m.k;
the second annular plate is made of brass, and the heat conductivity coefficient is 109W/m.k.
In some embodiments of the invention, the retaining ring is a graphite material.
In some embodiments of the present invention, three or more threaded holes are formed on the sidewall of the positioning ring at equal intervals, and the threaded holes are communicated with the inner side and the outer side of the positioning ring and are perpendicular to the axis of the positioning ring.
According to another aspect of the present invention, there is provided a seed crystal bonding method for bonding seed crystals using the above-described hot press apparatus for seed crystal bonding, comprising: sleeving the positioning ring on a base with a bearing surface stuck with graphite paper; uniformly and evenly coating bonding glue on the central vacant position of the base; the seed crystal is flatly placed on the bonding glue, and a certain degree of compaction operation is carried out; slowly and flatly placing the pressing block on the seed crystal to enable the contact surface to be abutted against the seed crystal; placing the whole set of device in vacuum hot-pressing equipment for solidification; and cooling, taking out the whole set of device, and bonding the seed crystal and the base.
In some embodiments of the invention, after the seed crystal is placed in the vacuum autoclave, the vacuum autoclave is evacuated to a temperature of 5X 10 -3 And then heating for 1-4 hours to 370-400 ℃ under Pa, and keeping the temperature for 4-7 hours.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
FIG. 1 is a schematic view showing the overall structure of a hot press device according to an embodiment of the present application;
FIG. 2 is a cross-sectional view showing the internal structure of the hot press;
fig. 3 is a schematic diagram of a structure embodying a compact.
The reference numerals in the drawings are as follows: 1. a base; 11. a first ring groove; 2. a positioning ring; 21. a threaded hole; 22. a second ring groove; 3. briquetting; 31. a base; 32. a center circular plate; 33. a first annular plate; 34. a second annular plate; 4. seed crystal; 5. bonding glue; 6. and (5) a bolt.
Detailed Description
It should be understood that the described embodiments are merely some, but not all, of the embodiments of the present application. All other embodiments, based on the embodiments herein, which would be apparent to one of ordinary skill in the art without making any inventive effort, are intended to be within the scope of the present application.
When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples are not representative of all implementations consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with some aspects of the present application as detailed in the accompanying claims.
In the description of the present application, it should be understood that the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context. Furthermore, in the description of the present application, unless otherwise indicated, "a plurality" means two or more. "and/or", describes an association relationship of an association object, and indicates that there may be three relationships, for example, a and/or B, and may indicate: a exists alone, A and B exist together, and B exists alone. The character "/" generally indicates that the context-dependent object is an "or" relationship.
The hot pressing device and the seed crystal bonding method applied to seed crystal bonding provided in the embodiments of the present application are described below with reference to the accompanying drawings.
The embodiment of the application discloses a hot pressing device applied to seed crystal bonding. As shown in fig. 1 and 2, the hot pressing device comprises a base 1, a positioning ring 2 and a pressing block 3; wherein, one side of the base 1 is provided with a first annular groove 11, and the base 1 is positioned in the area surrounded by the first annular groove 11 to form a bearing surface of the seed crystal 4; one end of the positioning ring 2 forms a connecting end which is matched with the first annular groove 11; the pressing block 3 is matched with the inner ring of the positioning ring 2, and one side of the pressing block 3 forms a contact surface of the seed crystal 4.
Through using the hot press device in this technical scheme, with holding ring 2 suit on base 1, make the axis perpendicular to of holding ring 2 the loading surface of base 1, later level scribble bonding glue 5 on the loading surface of base 1, place seed crystal 4 on bonding glue 5 level, slowly insert holding ring 2 and level place on seed crystal 4 by the one end of contact surface with briquetting 3, make contact surface and seed crystal 4 paste, and there is not obvious gap between briquetting 3 and the holding ring 2, thereby under the environment of the vacuum hot pressing of follow-up hot pressing process, through holding ring 2 and cooperation briquetting 3's own weight, restrict briquetting 3 and take place tiny displacement, make the pressure of briquetting 3 pressure on seed crystal 4 more balanced, both can reduce seed crystal 4 and produce the possibility that crackle even bursts due to the atress is uneven, can also under the balanced circumstances of pressurized of seed crystal 4, obtain the bonding result that seed crystal 4 relative base 1 and seed crystal 4 self all reach high flatness, make seed crystal 4 can carry out the long brilliant of the next step with more level mode.
In some embodiments of the present invention, as shown in fig. 1 and 2, three or more threaded holes 21 are formed on the sidewall of the positioning ring 2 at equal intervals, and the threaded holes 21 communicate with the inside and the outside of the positioning ring 2 and are perpendicular to the axis of the positioning ring 2. After the press block 3 is inserted into the positioning ring 2 and pressed on the seed crystal 4, the bolts 6 can be screwed into the threaded holes 21 and pressed against the side wall of the press block 3, and the press block 3 is further fixed by a plurality of bolts 6 in a multipoint balance manner so as to further prevent the press block 3 from being displaced in the hot pressing process.
Specifically, four screw holes 21 in the present embodiment are formed in the sidewall of the retainer ring 2 at equal intervals.
In some embodiments of the present invention, as shown in fig. 2, the first ring groove 11 is communicated with the outer peripheral surface of the base 1, a second ring groove 22 is formed on one end surface of the positioning ring 2 to form a connecting end, the second ring groove 22 is communicated with the inner peripheral surface of the positioning ring 2, the second ring groove 22 has the same inner diameter shape as the first ring groove 11 and the same ring width, and the positioning ring 2 and the base 1 are in seamless insertion connection through the first ring groove 11 and the second ring groove 22.
Furthermore, the positioning ring 2 and the base 1 can be connected through threads, and further reinforced through a screwing mode.
In some embodiments of the invention, as shown in fig. 2, the thermal conductivity of the compact 3 at least near one end of the contact surface gradually decreases from the center radially to the edge. The setting that the thermal conductivity coefficient of the one end that briquetting 3 is close to the contact surface radially reduces by the center to the edge gradually for under the environment of the vacuum hot pressing of hot pressing process, the efficiency that briquetting 3 was thermally conductive to seed crystal 4 is from center to the gradual slowing all around, can be better with the bubble in the bonding glue 5 from center to the gradual discharge all around, greatly avoided the bubble in the bonding glue 5 to gather because of unable effective discharge center, reduced and made the glue layer unstable relatively poor situation of long crystalline volume in later stage because of bubble gathering.
In some embodiments of the present invention, the pressing block 3 is made of metal, and the base 1 and the positioning ring 2 are made of graphite. Under the vacuum hot-pressing environment of the hot-pressing procedure, compared with a metal material, the heat conductivity coefficient of graphite is reduced along with the temperature rise, and even tends to be in an adiabatic state, so that the heat transfer effect of the base 1 and the positioning ring 2 is far smaller than that of the pressing block 3, and bubbles in the bonding glue 5 are gradually discharged from the center to the periphery by better utilizing the arrangement that the heat conductivity coefficient of one end of the pressing block 3 close to a contact surface is gradually reduced from the center to the edge under the condition that the influence of the heat transfer of the base 1 and the positioning ring 2 is reduced as much as possible.
In some embodiments of the present invention, as shown in fig. 2 and 3, the compact 3 includes a base 31 and a heat conductive layer connected to one end of the base 31; the contact surface is the side of the heat conducting layer away from the substrate 31; the thermal conductivity of the substrate 31 is smaller than that of the thermal conductive layer; the thermal conductivity of the thermally conductive layer decreases gradually from the center radially to the edge. The heat in the vacuum hot-pressing environment is transferred to the heat conducting layer through the matrix 31, and then the heat conducting layer is transferred to the seed crystal 4 from the center to the edge in a layering manner more finely, so that the control accuracy of air bubble discharge in the bonding glue 5 is improved, and the residual of air bubbles is further reduced.
Specifically, in the present embodiment, the thermal conductivity of the substrate 31 is 14.7-15.2W/m.k, the substrate 31 is made of stainless steel, and the thermal conductivity of the thermal conductive layer is 100-400W/m.k. Further, the heat conduction layer comprises a central circular plate 32, a first annular plate 33 sleeved on the central circular plate 32 and a second annular plate 34 sleeved on the first annular plate 33; wherein, the material of the central circular plate 32 is pure copper, and the heat conductivity coefficient is 398W/m.k; the first annular plate 33 is made of pure aluminum, and the heat conductivity coefficient is 236W/m.k; the second ring plate 34 is made of brass and has a thermal conductivity of 109W/m.k.
It should be noted that, the heat conducting layer may also be formed by combining one central circular plate 32 with one, three or four annular plates, etc., specifically, the heat conducting layer may be selected according to the diameter of the seed crystal 4 and matched with the material with corresponding heat conductivity coefficient, and the radius of the central circular plate 32 and the annular width of each annular plate may be reasonably distributed, for example, the radius of the central circular plate 32 and the annular width of each annular plate are set to be equal.
The embodiment also provides a seed crystal bonding method, which bonds seed crystals by using the hot pressing device applied to seed crystal bonding, and comprises the following steps:
s1, sleeving a positioning ring 2 on a base 1 with a bearing surface stuck with graphite paper.
S2, uniformly and evenly coating adhesive glue 5 on the central vacant position of the base 1.
And S3, smoothly placing the seed crystal 4 on the bonding glue 5, and performing compaction operation to a certain extent.
And S4, slowly and flatly placing the pressing block 3 on the seed crystal 4, and further fixing the pressing block 3 through the bolts 6 on the positioning ring 2 so that the contact surface is abutted against the seed crystal 4.
S5, placing the whole set of device in vacuum hot-pressing equipment for solidification; after the seed crystal 4 is placed in the vacuum hot-pressing equipment, the vacuum hot-pressing equipment is vacuumized to 5 multiplied by 10 -3 And then heating for 1-4 hours to 370-400 ℃ under Pa, and keeping the temperature for 4-7 hours.
And S6, cooling and taking out the whole device, and bonding the seed crystal 4 and the base 1.
The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (10)
1. A hot press apparatus for seed crystal bonding, comprising:
a base, wherein a first annular groove is formed on one side of the base, and the base is positioned in an area surrounded by the first annular groove to form a bearing surface of seed crystal;
the positioning ring is provided with a connecting end at one end, and the connecting end is matched with the first annular groove;
and the pressing block is matched with the inner ring of the positioning ring, and one side of the pressing block forms a contact surface of the seed crystal.
2. The apparatus according to claim 1, wherein the thermal conductivity of at least one end of the compact near the contact surface is gradually decreased from the center to the edge.
3. The apparatus of claim 2, wherein the briquette is a metal material and the base is a graphite material.
4. The apparatus of claim 3, wherein the compact comprises a base and a thermally conductive layer attached to one end of the base;
the contact surface is one side of the heat conduction layer far away from the substrate;
the heat conductivity coefficient of the matrix is smaller than that of the heat conducting layer;
the heat conductivity coefficient of the heat conducting layer gradually decreases from the center to the edge.
5. The apparatus of claim 4, wherein the substrate has a thermal conductivity of 14.7-15.2W/m.k and the thermally conductive layer has a thermal conductivity of 100-400W/m.k.
6. The apparatus according to claim 5, wherein the heat conductive layer comprises a center circular plate, a first ring plate sleeved on the center circular plate, and a second ring plate sleeved on the first ring plate;
the central circular plate is made of pure copper, and the heat conductivity coefficient is 398W/m.k;
the first annular plate is made of pure aluminum, and the heat conductivity coefficient is 236W/m.k;
the second annular plate is made of brass, and the heat conductivity coefficient is 109W/m.k.
7. The apparatus of any one of claims 3-6, wherein the retaining ring is graphite.
8. The heat pressing device for seed crystal bonding according to any one of claims 1 to 6, wherein three or more threaded holes are formed in the side wall of the positioning ring at equal intervals, and the threaded holes are communicated with the inner side and the outer side of the positioning ring and are perpendicular to the axis of the positioning ring.
9. A seed crystal bonding method for bonding seed crystals by using the hot press device for bonding seed crystals according to any one of claims 1 to 8, comprising:
sleeving the positioning ring on a base with a bearing surface stuck with graphite paper;
uniformly and evenly coating bonding glue on the central vacant position of the base;
the seed crystal is flatly placed on the bonding glue, and a certain degree of compaction operation is carried out;
slowly and flatly placing the pressing block on the seed crystal to enable the contact surface to be abutted against the seed crystal;
placing the whole set of device in vacuum hot-pressing equipment for solidification;
and cooling, taking out the whole set of device, and bonding the seed crystal and the base.
10. The method of bonding seed crystals according to claim 9, wherein after the seed crystals are placed in the vacuum hot-pressing apparatus, the vacuum hot-pressing apparatus is evacuated to 5X 10 -3 And then heating for 1-4 hours to 370-400 ℃ under Pa, and keeping the temperature for 4-7 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310506982.0A CN116497453A (en) | 2023-05-04 | 2023-05-04 | Hot pressing device applied to seed crystal bonding and seed crystal bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310506982.0A CN116497453A (en) | 2023-05-04 | 2023-05-04 | Hot pressing device applied to seed crystal bonding and seed crystal bonding method |
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| Publication Number | Publication Date |
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| CN116497453A true CN116497453A (en) | 2023-07-28 |
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| CN202310506982.0A Pending CN116497453A (en) | 2023-05-04 | 2023-05-04 | Hot pressing device applied to seed crystal bonding and seed crystal bonding method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117987932A (en) * | 2024-04-03 | 2024-05-07 | 常州臻晶半导体有限公司 | Stamping device and method for bonding and sintering seed crystals by liquid phase method |
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2023
- 2023-05-04 CN CN202310506982.0A patent/CN116497453A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117987932A (en) * | 2024-04-03 | 2024-05-07 | 常州臻晶半导体有限公司 | Stamping device and method for bonding and sintering seed crystals by liquid phase method |
| CN117987932B (en) * | 2024-04-03 | 2024-06-11 | 常州臻晶半导体有限公司 | Stamping device and method for bonding and sintering seed crystals |
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