CN116497440A - Silicon wafer epitaxial growth base support frame and device - Google Patents

Abstract

The present disclosure provides a silicon wafer epitaxial growth base support frame and device, the base support frame includes: a support column; and a plurality of support arms extending radially outwardly and axially upwardly from the longitudinal axis of the support column, the support arms including first and second ends opposite in their axially upwardly extending direction, the first ends being connected to the support column, the second ends supporting with the support column a susceptor for carrying silicon wafers; each supporting arm is provided with a convex lens, and a plurality of convex lenses corresponding to the supporting arms are configured as follows: in the axial direction of the support column, the convex lenses can refract radiant heat energy through the convex lenses and converge towards a predetermined area on a silicon wafer carried on the susceptor. The silicon wafer epitaxial growth base support frame and the device can improve the resistivity uniformity of an epitaxial layer.

Description

Silicon wafer epitaxial growth base support frame and device

Technical Field

The invention relates to the technical field of silicon wafer epitaxial growth, in particular to a silicon wafer epitaxial growth base support frame and a device.

Background

The epitaxial growth process of a silicon wafer is an important process in the manufacturing process of semiconductor chips, and the process refers to the process that a silicon single crystal layer with controllable resistivity and thickness, no crystal originated particle (Crystal Originated Particles, COP) defect and no oxygen precipitation is grown on a polished silicon wafer under certain conditions. Epitaxial growth of silicon wafers mainly comprises growth methods such as vacuum epitaxial deposition, vapor phase epitaxial deposition, liquid phase epitaxial deposition and the like, wherein the vapor phase epitaxial deposition is most widely applied. Epitaxial layers are obtained by reacting a silicon source gas with hydrogen to form monocrystalline silicon and depositing on the surface of the silicon wafer in a high temperature environment, and doping the epitaxial layers by introducing dopants (common dopants include B2H6 and PH 3) to obtain the required resistivity.

The epitaxial growth device comprises a reaction chamber formed by surrounding an upper quartz bell jar and a lower quartz bell jar, wherein a base for bearing a silicon wafer is arranged in the reaction chamber, and a base supporting part for supporting the base is arranged in the reaction chamber. Because the gas enters the chamber in a single direction during the epitaxial growth process, the silicon wafer needs to rotate during the growth process to ensure uniform growth. Therefore, the susceptor support portion can fix the susceptor and drive the susceptor to rotate, so that epitaxial growth can be uniformly performed on the substrate. Outside the quartz bell jar, a heating bulb for providing reaction energy is arranged, and heat is provided for the reaction by means of heat radiation.

For epitaxial growth of silicon wafers, the uniformity of resistivity directly affects the electrical properties of the semiconductor. The reason for the poor uniformity of the resistivity of the epitaxial wafer is mainly that the resistivity of the local area of the epitaxial wafer is high, so that the uniformity of the resistivity of the whole epitaxial wafer is poor. In general, the resistivity of the epitaxial layer is affected by temperature, and the higher the temperature, the smaller the area resistivity, and the difference is generated between the temperature of the shielding part of the base support part of the base and the temperature of other parts due to the existence of the base support part, so that the problem of non-uniform temperature of the whole base is caused, the local area resistivity of the silicon wafer is caused to be larger, and the uniformity of the surface resistivity of the epitaxial wafer is caused to be poor.

Disclosure of Invention

The embodiment of the disclosure aims to provide a silicon wafer epitaxial growth base support frame and a device, which can improve the resistivity uniformity of an epitaxial wafer.

The technical scheme provided by the embodiment of the disclosure is as follows:

a silicon wafer epitaxial growth susceptor support stand comprising: a support column; and a plurality of support arms extending radially outwardly and axially upwardly from the longitudinal axis of the support column, the support arms including first and second ends opposite in their axially upwardly extending direction, the first ends being connected to the support column, the second ends supporting with the support column a susceptor for carrying silicon wafers; each supporting arm is provided with a convex lens, and a plurality of convex lenses corresponding to the supporting arms are configured as follows: in the axial direction of the support column, the convex lenses can refract radiant heat energy through the convex lenses and converge towards a predetermined area on a silicon wafer carried on the susceptor.

Illustratively, the convex lens comprises at least one lenticular lens structure extending along the length of the support arm, and the lenticular lens structure is configured to refract radiant heat energy through the lenticular lens structure and converge toward an annular region of a wafer carried on the susceptor at a distance R/2 from the center of the wafer, wherein the wafer comprises a body region and an edge region at the periphery of the body region, R being the radius of the body region.

Illustratively, the lenticular lens structure is a single-sided lenticular lens, and a convex surface of the lenticular lens structure is disposed toward the base.

Illustratively, the lenticular lens structure is integrally formed with the support arm.

Illustratively, each of the support arms is provided with a plurality of convex lenses sequentially arranged along the length direction thereof.

The silicon wafer comprises a silicon wafer, a plurality of support arms and a plurality of silicon wafers, wherein each support arm is provided with four convex lenses along the length direction of the support arm, the four convex lenses are configured to refract radiation heat energy through the convex lenses and converge towards an annular region which is carried on the base and is at a distance of R/2 from the center of the silicon wafer, the silicon wafer comprises a main body region and an edge region positioned at the periphery of the main body region, and R is the radius of the main body region; or alternatively

The number of the supporting arms is four, the four supporting arms are uniformly distributed around the circumferential direction of the supporting column, three convex lenses are distributed on each supporting arm along the length direction of each supporting arm, the four supporting arms are configured to be aligned with the <100> crystal orientation of the silicon wafer borne on the base in the axial direction of the supporting column, and the plurality of the convex lenses on the four supporting arms are configured to be capable of refracting radiant heat energy through the convex lenses and converging towards the area where the <100> crystal orientation of the silicon wafer borne on the base is located.

Illustratively, the support arm is the same material as the convex lens.

Illustratively, the material of the support arm is quartz, and the material of the convex lens is quartz.

The convex lens comprises a convex surface arranged towards the base, the central angle alpha corresponding to the arc-shaped length of the radial outer edge of the convex surface in the circumferential direction is 10 degrees < alpha <15 degrees, and the width of the convex lens along the direction perpendicular to the axial direction of the supporting arm where the convex lens is positioned is 10-15 mm.

A silicon wafer epitaxial growth apparatus, the apparatus comprising:

a base for carrying a silicon wafer;

the silicon wafer epitaxial growth base support frame is positioned below the base.

Illustratively, the apparatus further comprises:

the reaction chamber is used for accommodating the base and comprises an upper bell jar and a lower bell jar, the upper bell jar and the lower bell jar are enclosed together to form the reaction chamber, the base separates the reaction chamber into an upper reaction chamber and a lower reaction chamber, and the silicon wafer is placed in the upper reaction chamber;

the heating piece is divided into an upper heating piece and a lower heating piece, the upper heating piece and the lower heating piece are respectively arranged outside the reaction chamber, a high-temperature environment for vapor phase epitaxy deposition is provided for the reaction chamber through the upper bell jar and the lower bell jar, and the base support frame is positioned on a radiation path of the lower heating piece for radiating heat to the base;

the gas inlet is arranged on the side wall of the reaction chamber and is used for sequentially conveying cleaning gas and silicon source gas into the reaction chamber; a kind of electronic device with high-pressure air-conditioning system

And the exhaust port is arranged on the side wall of the reaction chamber and is used for exhausting the reaction tail gas of each of the cleaning gas and the silicon source gas out of the reaction chamber.

The beneficial effects brought by the embodiment of the disclosure are as follows:

according to the silicon wafer epitaxial growth base support frame and the device provided by the embodiment of the disclosure, the convex lenses are respectively arranged on each support arm of the base support frame, radiation heat energy is refracted and converged to the preset area of the silicon wafer by utilizing the optical characteristics of the convex lenses, and the preset area can be an area which is formed by shielding the radiation heat energy by the support arms and causes uneven resistivity of an epitaxial wafer in the related technology, so that the problem of uniform temperature of the whole base due to shielding of a radiation heat source by the support arms can be solved, and the problem of uniformity of resistivity of the epitaxial wafer can be further improved.

Drawings

FIG. 1 shows an epitaxial layer resistivity profile when using a prior art wafer epitaxial growth susceptor support stand;

FIG. 2 shows the result of 35 point resistivity in the diametric direction of an epitaxial layer when using a prior art wafer epitaxial growth susceptor support stand;

FIG. 3 is a schematic view showing the structure of a silicon wafer epitaxial growth apparatus according to an embodiment of the present disclosure;

FIG. 4 is a schematic view showing a structure of a support frame for a silicon wafer epitaxial growth susceptor according to one embodiment of the present disclosure;

FIG. 5 is a top view of a silicon wafer epitaxial growth susceptor support stand provided in one embodiment of the present disclosure;

FIG. 6 is a schematic view showing the structure of a convex lens on a support arm in a support frame of a silicon wafer epitaxial growth susceptor according to one embodiment of the present disclosure;

FIG. 7 shows an epitaxial layer resistivity measurement spot profile;

FIG. 8 is a schematic view of a support frame for a silicon wafer epitaxial growth susceptor according to another embodiment of the present disclosure;

FIG. 9 is a top view of a silicon wafer epitaxial growth susceptor support stand provided in accordance with another embodiment of the present disclosure;

FIG. 10 is a schematic view of a support frame for a silicon wafer epitaxial growth susceptor according to another embodiment of the present disclosure;

FIG. 11 is a top view of a silicon wafer epitaxial growth susceptor support stand provided in accordance with another embodiment of the present disclosure;

fig. 12 is a schematic diagram showing the positional relationship between the silicon wafer and four support arms in the support frame of the epitaxial growth susceptor shown in fig. 11.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present disclosure. It will be apparent that the described embodiments are some, but not all, of the embodiments of the present disclosure. All other embodiments, which can be made by one of ordinary skill in the art without the need for inventive faculty, are within the scope of the present disclosure, based on the described embodiments of the present disclosure.

Unless defined otherwise, technical or scientific terms used in this disclosure should be given the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," and the like, as used in this disclosure, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. Likewise, the terms "a," "an," or "the" and similar terms do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed.

Before explaining the silicon wafer epitaxial growth susceptor support frame and the device provided in the embodiments of the present disclosure in detail, the following description is necessary for the related art:

in the related art, the silicon wafer epitaxial growth apparatus may include a susceptor, a susceptor support frame, a heating member, and the like, wherein the susceptor support frame is supported below the susceptor, the silicon wafer is carried onto the susceptor, and the susceptor support frame are rotatable during epitaxial layer growth to improve epitaxial layer growth uniformity on the surface of the silicon wafer.

The inventor of the present disclosure found through research that, as the temperature of the epitaxial layer on the silicon wafer is affected by the temperature of the susceptor below the silicon wafer, and the susceptor support frame is located below the susceptor and is located on the heat radiation path of the lower heating element, part of the heat of the susceptor can be shielded, so that the temperature of the final susceptor in different areas is different, and the problem of uneven resistivity of the epitaxial layer is further caused.

Taking an epitaxial layer formed after epitaxial growth of a silicon wafer by using a silicon wafer epitaxial growth device in the related art as an example, a resistivity distribution diagram of the epitaxial layer is illustrated in fig. 1, and the difference of color levels represents the difference of the resistivity of the epitaxial layer. Among them, epitaxial layer resistivity detection can be performed using a device model QC3000e from Semilab. As can be seen from fig. 1, there is a color difference between different regions at a certain distance from the center of the silicon wafer, and the inventor researches that the reason for the color difference between the regions is that the support arm affects the distribution of the thermal field, thereby affecting the growth rate of the epitaxial layer, and finally resulting in the difference of the resistivity of the epitaxial layer.

In order to solve the above problems, as shown in fig. 3 and 4, an embodiment of the present disclosure provides a silicon wafer epitaxial growth susceptor support frame 200, including: a support column 210; and a plurality of support arms 220 extending radially outwardly and axially upwardly from the longitudinal axis of the support column 210, the support arms 220 including first and second ends opposite in their axially upwardly extending direction, the first ends being connected to the support column 210 and the second ends supporting with the support column 210 a susceptor 100 for carrying a silicon wafer 10;

each of the support arms 220 is provided with a convex lens 221, and the convex lenses 221 corresponding to the support arms 220 are configured to: in the axial direction of the support column 210, the plurality of convex lenses 221 are capable of refracting radiant heat energy through the convex lenses 221 and converging toward a predetermined area on the silicon wafer 10 carried on the susceptor 100.

According to the silicon wafer epitaxial growth susceptor support frame 200 provided by the embodiment of the present disclosure, the convex lenses 221 are respectively disposed on each support arm 220 of the susceptor support frame 200, and radiant heat energy is refracted and converged to a predetermined area of the silicon wafer 10 by utilizing the optical characteristics of the convex lenses 221, wherein the predetermined area may be an area including the uneven resistivity of an epitaxial wafer caused by the shielding of the silicon wafer by the support arms in the related art, so that the problem of uniform overall temperature of the susceptor 100 caused by the shielding of the radiant heat source by the support arms 220 can be improved, and the problem of uniform resistivity of the epitaxial wafer can be further improved.

It should be noted that the predetermined area may be adjusted according to silicon wafers 10 of different sizes, susceptor supporting frames 200 of different structures, and the like, and the predetermined area should be a position corresponding to a ring-shaped area with different color levels in the epitaxial layer resistivity distribution result.

As an exemplary embodiment, as shown in fig. 4 and 5, the convex lens 221 includes at least one lenticular lens structure extending along the length of the supporting arm 220, and the lenticular lens structure is configured to refract radiant heat energy through the lenticular lens structure and to converge toward a predetermined region of the silicon wafer carried on the susceptor from the silicon wafer. By adopting the above scheme, the convex lens is designed into a columnar convex lens structure, so that the heat conductivity coefficient of the whole supporting arm 220 is ensured to be approximately the same, and further, the effect of shielding heat radiation at each position in the length direction of the supporting arm 220 is ensured to be approximately the same, and the possibility of introducing other unnecessary changes due to the addition of the convex lens 221 is reduced.

In some embodiments, the lenticular lens structure may be integrally formed with the support arm 220, in other words, the lenticular lens structure may be directly used as the body of the support arm 220 instead of the cylindrical support arm in the related art, so that the arrangement of the lenticular lens structure does not affect the path of the heat radiation, and is more beneficial to uniformity of temperature distribution.

It will of course be appreciated that in other embodiments not shown, the convex lens may be coupled to the support arm in other ways.

Further, in some embodiments, as shown in fig. 6, the lenticular lens structure is a single-sided lenticular lens, and the convex surface 221a of the lenticular lens structure is disposed toward the base 100. Illustratively, in one specific embodiment, as shown in fig. 6, one surface of the lenticular lens structure is a convex surface 221a, and the other opposite surface is a plane surface.

In other embodiments, not shown, the lenticular lens structure may have a convex surface 221a on one side and a concave surface on the other side, so long as the lenticular lens structure is capable of refracting radiant heat energy and converging the radiant heat energy at a predetermined area of the support arm 220.

Taking a 300mm diameter wafer 10 as an example, when the wafer 10 is placed in the susceptor 100, the epitaxial layer of the wafer 10 may have a significant difference in thickness from other regions at one half of the radius of the wafer 10 due to the shielding of the backside support arms 220. Thus, in some embodiments, the lenticular lens structure is configured to be able to refract radiant heat energy via the lenticular lens structure towards an annular region of the wafer carried on the susceptor at a distance R/2 from the wafer center, that is, the predetermined region comprises an annular region at a distance R/2 from the wafer center. Wherein the silicon wafer 10 comprises a main body area A and an edge area B positioned at the periphery of the main body area, and R is the radius of the main body area A.

Taking the measurement point of the resistivity uniformity of the epitaxial layer as shown in fig. 7 as an example, the resistivity values of 9 points on the silicon wafer 10 were tested for calculation: p1 is a central point, P2, P3, P4, P5 are 4 points at R/2, P6, P7, P8, P9 are 4 points at the edge, and the width of the edge region B is removed, for example, the coverage area of the edge region B is from the point at the outermost periphery of the silicon wafer 10 to a position 5mm from the edge of the silicon wafer 10. The maximum value of the resistivity measured at 9 points P1 to P9 is denoted as Rmax, the minimum value is denoted as Rmin, and the calculation method of the resistivity uniformity is (Rmax-Rmin)/(rmax+rmin) ×100%.

Fig. 2 shows the radial resistivity profile of the wafer 10. It can be seen that the resistivity is higher in the R/2 region (-100 mm to 100 mm) shielded by the base support 200.

In this embodiment, as shown in fig. 4, the number of the supporting arms 220 is three, and the three supporting arms 220 are uniformly distributed around the circumference of the supporting column 210. It should be understood that the number of the supporting arms 220 is not limited to three, and in practical applications, the supporting arms 220 should be uniformly distributed sequentially around the circumference of the supporting column 210.

It should be noted that, in other embodiments, the position of the predetermined area may be adaptively adjusted according to the size of the silicon wafer 10, the structure of the supporting arm 220, and the like. For example, as shown in fig. 10 to 12, four support arms 220 are configured to be aligned with the <100> crystal orientation of the silicon wafer 10 carried on the susceptor 100 in the axial direction of the support column 210, and the plurality of convex lenses 221 on the four support arms 220 are configured to be capable of refracting radiant heat energy through the convex lenses 221 and converging toward the region where the <100> crystal orientation of the silicon wafer 10 carried on the susceptor 100 is located. That is, the predetermined region may further include a region where the <100> crystal orientation of the silicon wafer 10 is located.

Specifically, the uniformity of the thickness of the epitaxial layer directly affects the flatness of the epitaxial wafer during epitaxial growth. In general, the thickness of the epitaxial layer is greatly affected by temperature, and the epitaxial layer grows faster in the region with higher temperature, and vice versa. In addition, the crystal orientation of the substrate has a very obvious effect on the flatness of the epitaxial layer. In particular, taking a silicon wafer with a <100> crystal plane as an example, the epitaxial layer growth rate is higher in the region of the <110> crystal orientation group than in the region of the <100> crystal orientation group, mainly because the crystal growth rate is different between different crystal planes (the crystal plane growth rate with higher atomic density is smaller), and the thickness uniformity of the silicon wafer is poor due to the thickness difference. Therefore, in the above scheme, the number of the supporting arms is four, and by arranging the convex lenses in each supporting arm, radiant heat at the position of the <100> crystal phase area can be refracted and converged by the convex lenses on the four supporting arms, so that the temperature at the position of the <100> crystal phase area is improved, the uniform distribution of a thermal field is ensured, and the thickness uniformity and flatness of the epitaxial wafer are improved.

In addition, the support arm 220 is illustratively made of the same material as the convex lens 221, e.g., quartz is used for both the support arm 220 and the convex lens 221. By adopting the above scheme, the support arm 220 and the convex lens 221 can be guaranteed to have the same thermal conductivity as much as possible, and new impurities can not be introduced in the epitaxial growth process on the basis of changing the structure of the original base support frame 200.

Further, the convex lens 221 is not limited to the lenticular lens structure shown in fig. 6. In other exemplary embodiments, as shown in fig. 8 to 11, each of the support arms 220 is provided with a plurality of convex lenses 221 sequentially arranged along the length direction thereof, wherein

The convex lenses 221 are configured to refract radiant heat energy through the convex lenses 221 and converge toward an annular region of the silicon wafer 10 carried on the susceptor 100 at a distance R/2 from the center of the silicon wafer, wherein the silicon wafer 10 includes a body region a and an edge region B located at the periphery of the body region, R being the radius of the body region a;

or alternatively

The number of the supporting arms 220 is four, the four supporting arms 220 are configured to align with the <100> crystal orientation of the silicon wafer 10 carried on the susceptor 100 in the axial direction of the supporting column 210, and the plurality of convex lenses 221 on the four supporting arms 220 are configured to be capable of refracting radiant heat energy through the convex lenses and converging toward the region where the <100> crystal orientation of the silicon wafer 10 carried on the susceptor 100 is located.

Specifically, in one embodiment, as shown in fig. 8 and 9, the number of the supporting arms 220 is three, the three supporting arms 220 are uniformly distributed around the circumference of the supporting column 210, each supporting arm 220 is distributed with four convex lenses 221 along the length direction of the supporting arm, and the four convex lenses 221 are configured to be capable of refracting radiant heat energy through the convex lenses and converging toward an annular region of a silicon wafer carried on the susceptor at a distance R/2 from the center of the silicon wafer, wherein the silicon wafer includes a main body region and an edge region located at the periphery of the main body region, and R is a radius of the main body region.

In this embodiment, the convex lens 221 may be made of the same material as the supporting arm 220, such as quartz.

For example, the convex lenses 221 may be double-sided convex lenses, and the arrangement space between the convex lenses 221 may be reasonably adjusted according to actual requirements.

In another embodiment, as shown in fig. 10 to 12, the number of the supporting arms 220 is four, the four supporting arms 220 are uniformly distributed around the circumferential direction of the supporting column 210, three convex lenses 221 are distributed along the length direction of each supporting arm 220, the four supporting arms 220 are configured to align with the <100> crystal orientation of the silicon wafer 10 carried on the susceptor 100 in the axial direction of the supporting column 210, and the plurality of convex lenses on the four supporting arms are configured to be capable of refracting radiant heat energy through the convex lenses and converging toward the region where the <100> crystal orientation of the silicon wafer carried on the susceptor is located.

In this embodiment, the convex lens 221 may be made of the same material as the supporting arm, for example, quartz.

For example, the convex lenses 221 may be double-sided convex lenses, and the arrangement space between the convex lenses 221 may be reasonably adjusted according to actual requirements.

In addition, it should be noted that, the plurality of convex lenses 221 can refract the radiant heat energy through the convex lenses 221 and converge toward the predetermined area on the silicon wafer 10 carried on the susceptor 100, and specifically, the silicon wafers with different sizes can be adapted by reasonably adjusting specific structural dimension parameters (such as the bending degree of the convex surface, the size of the lens, etc.) of the convex lenses 221.

For example, as an exemplary embodiment, taking a silicon wafer of a certain diameter size (for example, a silicon wafer of 300mm diameter) as an example, the convex lens 221 may be specifically configured to: as shown in fig. 6, the convex lens 221 includes a convex surface disposed toward the base 100, a circle center angle α corresponding to an arc length of a radially outer edge of the convex surface in a circumferential direction ranges from 10 ° < α <15 °, and a width d of the convex lens 221 along a direction perpendicular to an axial direction of the support arm where the convex lens is located ranges from 10 mm to 15mm. By reasonably designing the center angle corresponding to the arc length of the convex surface of the convex lens 221, the width of the convex lens 221, and the like, the convex lens 221 radiates heat energy to a predetermined area on the silicon wafer 10.

In addition, it is required to ensure that the radiant heat energy refracted by the convex lens 221 can exactly compensate the heat energy difference between the predetermined region of the silicon wafer 10 and other regions. Specifically, when the temperature of the epitaxial furnace is calibrated, the power and the like of the heating element can be calibrated and adjusted, so that the requirement that the radiation heat energy refracted by the convex lens can exactly compensate the heat energy difference between the preset area and other areas of the silicon wafer when the set temperature is reached is met. In addition, as shown in fig. 3, an embodiment of the present disclosure further provides a silicon wafer epitaxial growth apparatus, where the apparatus includes:

a susceptor 100 for carrying the silicon wafer 10;

the base support 200 provided in the embodiments of the present disclosure is located below the base 100, and the base support 200 is located below the base 100.

Illustratively, a reaction chamber for accommodating the susceptor 100 includes an upper bell jar 300 and a lower bell jar 400, which together enclose to form the reaction chamber, the susceptor 100 dividing the reaction chamber into an upper reaction chamber and a lower reaction chamber, the silicon wafer 10 being placed in the upper reaction chamber;

the heating element 500 is divided into an upper heating element and a lower heating element, which are respectively arranged outside the reaction chamber, and provide a high-temperature environment for vapor phase epitaxy deposition for the reaction chamber through the upper bell jar 300 and the lower bell jar 400;

wherein the base support 200 is located in a radiation path of the heating member for radiating heat to the base 100.

Illustratively, the silicon wafer epitaxial growth apparatus further comprises:

an inlet 600 disposed on a sidewall of the reaction chamber for sequentially delivering a cleaning gas and a silicon source gas into the reaction chamber;

and an exhaust port 700 provided on a sidewall of the reaction chamber for exhausting the reaction tail gas of each of the cleaning gas and the silicon source gas from the reaction chamber.

The following points need to be described:

(1) The drawings of the embodiments of the present disclosure relate only to the structures related to the embodiments of the present disclosure, and other structures may refer to the general design.

(2) In the drawings for describing embodiments of the present disclosure, the thickness of layers or regions is exaggerated or reduced for clarity, i.e., the drawings are not drawn to actual scale. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.

(3) The embodiments of the present disclosure and features in the embodiments may be combined with each other to arrive at a new embodiment without conflict.

The above is merely a specific embodiment of the disclosure, but the protection scope of the disclosure should not be limited thereto, and the protection scope of the disclosure should be subject to the claims.

Claims (11)

1. A silicon wafer epitaxial growth susceptor support stand comprising: a support column; and a plurality of support arms extending radially outwardly and axially upwardly from the longitudinal axis of the support column, the support arms including first and second ends opposite in their axially upwardly extending direction, the first ends being connected to the support column, the second ends supporting with the support column a susceptor for carrying silicon wafers; it is characterized in that the method comprises the steps of,

each supporting arm is provided with a convex lens, and a plurality of convex lenses corresponding to the supporting arms are configured as follows: in the axial direction of the support column, the convex lenses can refract radiant heat energy through the convex lenses and converge towards a predetermined area on a silicon wafer carried on the susceptor.

2. The silicon wafer epitaxial growth susceptor support frame of claim 1 wherein said convex lens comprises at least one lenticular lens structure extending along a length of the support arm, wherein

The columnar convex lens structure is configured to be capable of refracting radiation heat energy through the columnar convex lens structure and converging towards an annular region of a silicon wafer carried on the base at a distance of R/2 from the center of the silicon wafer, wherein the silicon wafer comprises a main body region and an edge region positioned at the periphery of the main body region, and R is the radius of the main body region; or alternatively

The number of the supporting arms is four, the four supporting arms are configured to be aligned with the <100> crystal orientation of the silicon wafer carried on the base in the axial direction of the supporting column, and the plurality of convex lenses on the four supporting arms are configured to be capable of refracting radiant heat energy through the convex lenses and converging towards the area where the <100> crystal orientation of the silicon wafer carried on the base is located.

3. The support frame of claim 2, wherein the lenticular lens structure is a single-sided lenticular lens, and the convex surface of the lenticular lens is disposed toward the susceptor.

4. The silicon wafer epitaxial growth susceptor support stand of claim 2,

the columnar convex lens structure and the supporting arm are integrally formed.

5. The silicon wafer epitaxial growth susceptor support stand of claim 1, wherein,

each supporting arm is provided with a plurality of convex lenses which are sequentially arranged along the length direction of the supporting arm; wherein the method comprises the steps of

The convex lenses are configured to be capable of refracting radiant heat energy through the convex lenses and converging towards an annular region of a silicon wafer carried on the base at a distance of R/2 from the center of the silicon wafer, wherein the silicon wafer comprises a main body region and an edge region located at the periphery of the main body region, and R is the radius of the main body region; or alternatively

The number of the supporting arms is four, the four supporting arms are configured to be aligned with the <100> crystal orientation of the silicon wafer carried on the base in the axial direction of the supporting column, and the plurality of convex lenses on the four supporting arms are configured to be capable of refracting radiant heat energy through the convex lenses and converging towards the area where the <100> crystal orientation of the silicon wafer carried on the base is located.

6. The silicon wafer epitaxial growth susceptor support stand of claim 5,

four convex lenses are distributed on each supporting arm along the length direction of each supporting arm; or alternatively

The number of the supporting arms is four, the four supporting arms are uniformly distributed around the circumferential direction of the supporting column, and each supporting arm is provided with three convex lenses along the length direction of each supporting arm.

7. The silicon wafer epitaxial growth susceptor support stand of claim 1 wherein said support arm is of the same material as said convex lens.

8. The silicon wafer epitaxial growth susceptor support stand of claim 7, wherein the material of the support arm is quartz and the material of the convex lens is quartz.

9. The support frame according to any one of claims 1 to 8, wherein the convex lens comprises a convex surface disposed toward the susceptor, a radius angle α corresponding to an arc length of a radially outer edge of the convex surface in a circumferential direction is 10 ° < α <15 °, and a width of the convex lens along a direction perpendicular to an axial direction of the support arm in which the convex lens is located is 10 to 15mm.

10. A silicon wafer epitaxial growth apparatus, the apparatus comprising:

a base for carrying a silicon wafer;

a silicon wafer epitaxial growth susceptor support stand according to any one of claims 1 to 9, located below the susceptor.

11. The silicon wafer epitaxial growth apparatus of claim 10, further comprising:

the reaction chamber is used for accommodating the base and comprises an upper bell jar and a lower bell jar, the upper bell jar and the lower bell jar are enclosed together to form the reaction chamber, the base separates the reaction chamber into an upper reaction chamber and a lower reaction chamber, and the silicon wafer is placed in the upper reaction chamber;

the heating piece is divided into an upper heating piece and a lower heating piece, the upper heating piece and the lower heating piece are respectively arranged outside the reaction chamber, a high-temperature environment for vapor phase epitaxy deposition is provided for the reaction chamber through the upper bell jar and the lower bell jar, and the base support frame is positioned on a radiation path of the lower heating piece for radiating heat to the base;

the gas inlet is arranged on the side wall of the reaction chamber and is used for sequentially conveying cleaning gas and silicon source gas into the reaction chamber; a kind of electronic device with high-pressure air-conditioning system

And the exhaust port is arranged on the side wall of the reaction chamber and is used for exhausting the reaction tail gas of each of the cleaning gas and the silicon source gas out of the reaction chamber.