CN1164933C - Capacity humidometer - Google Patents
Capacity humidometer Download PDFInfo
- Publication number
- CN1164933C CN1164933C CNB021125201A CN02112520A CN1164933C CN 1164933 C CN1164933 C CN 1164933C CN B021125201 A CNB021125201 A CN B021125201A CN 02112520 A CN02112520 A CN 02112520A CN 1164933 C CN1164933 C CN 1164933C
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- Prior art keywords
- electric capacity
- conductive plate
- humidity sensitive
- capacitor
- capacity
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Abstract
The present invention provides a capacitive humidity measurer. The capacitive humidity measurer is compatible with a CMOS process and comprises a capacitive humidity sensor. One end of a capacitor of the capacitive humidity measurer is connected with a driving signal input end, and the other end is connected with a sensitive capacitor; a connection point of the capacitor and the sensitive capacitor is connected with an input end of a gate amplifier composed of an MOS pipe; one end of an output capacitor is in a grounding state, and the other end is the signal output end of the present invention; all the circuits are integrated on one piece of chip; the humidity sensitive capacitor is composed of an upper conductive plate and a lower conductive plate, wherein a gap is formed between the upper conductive plate and the lower conductive plate, and the upper conductive plate and the lower conductive plate are separated by supporting materials; a plurality of small holes are arranged on the upper conductive plate; in the humidity sensitive capacitor, a heating resistor is arranged under the lower conductive plate; an isolating layer is arranged between the lower conductive plate and the heating resistor; and the humidity sensitive capacitor Cx and the gate amplifying circuit formed by the MOS pipe are integrated on one piece of silicon chip by a standard CMOS process.
Description
Technical field:
The present invention is a kind of moisture detector that is used for surveying instrument, especially a kind of measurement mechanism of being made up of the capacitor type humidity sensor of and COMS process compatible.
Background technology:
Humidity sensor is based on to be made on the basis that physical influence relevant with humidity or chemical reaction can take place its functional material.It has the function that the humidity physical quantity can be converted to electric signal.The variation of the breathing that these functions can be by the resistance relevant with temperature or changes in capacitance, length or volume and some electrical quantity of junction device or MOS device comes accomplished.It is widely used at aspects such as military, meteorological, agricultural, industry (particularly weaving, electronics, food industry), medical treatment, building and household electrical appliance.
At present, humidity sensor is various in style, but with regard to its employed wet sensory material, mainly contains electrolyte and macromolecular compound wet sensory material, semiconductor ceramic material and elemental semiconductor and porous metal oxide semiconductor material etc.The electrolyte humidity sensor has shortcomings such as measurement range is narrow, repeatability is poor, serviceable life is short.The macromolecular compound humidity sensor has advantages such as wet sensing performance is good, sensitivity height, but has shortcomings such as degradation under high temperature and the super-humid conditions, poor stability, anticorrosive and anti-contamination ability.The semiconductor ceramic material humidity sensor have the wet performance of impression better, produce simple, cost is low, but the response time lack advantages such as heated wash, accurately measure poor performance under difficulty, the high temperature, be difficult to shortcomings such as integrated but also exist.
Summary of the invention:
Goal of the invention
Purpose of the present invention just provides that a kind of response speed is fast, chemical stability good, bear high temperature and the low temperature ability is strong, all devices are integrated in the capacity humidometer on the chip piece.
Technical scheme
Capacity humidometer of the present invention on circuit structure by humidity sensitive electric capacity, electric capacity, metal-oxide-semiconductor and resistance R, output capacitance C
0Form, one termination signal input part of electric capacity, another termination humidity sensitive electric capacity, the tie point of electric capacity and humidity sensitive electric capacity connects the input end of the gated amplifier of being made up of metal-oxide-semiconductor, one end ground connection of output capacitance, the other end is the signal output part of this device, and above circuit all is integrated on the chip piece; Humidity sensitive electric capacity is made up of last current-carrying plate, lower conducting plate, leaves the space between last current-carrying plate and lower conducting plate, and is separated by propping material, is provided with many apertures on last current-carrying plate; In the humidity sensitive electric capacity, below lower conducting plate, be provided with a heating resistor, between lower conducting plate and heating resistor, be provided with separation layer.
Technique effect
Adopt humidity sensitive capacitance detecting air humidity of the present invention, method and structure is all very simple, again since on a silicon chip integrated and the incorporate small signal amplifier of humidity sensitive electric capacity, therefore disturb little, precision is high, volume is little, be easy to adopt standard CMOS process production, can effectively reduce total cost.
Description of drawings:
Fig. 1 is an electrical schematic diagram of the present invention, and capacitor C is wherein arranged
Ref, the humidity sensitive capacitor C
x, metal-oxide-semiconductor M
1, M
2, M
3, M
4, M
5, resistance R, output capacitance C
0
Fig. 2 is the humidity sensitive capacitor C
xStructural representation.Last current-carrying plate A, lower conducting plate B, propping material C, heating resistor E, separation layer F are wherein arranged.
Embodiment
The present invention adopts silicon as rapidoprint, and the electric capacity of wherein measuring humidity is made up of two-layer current-carrying plate up and down.The spacing of two pole plates is controlled by propping material C.Opened a lot of aperture D on the current-carrying plate of upper strata so as gas permeable in two-plate.When humidity changes in the air, will cause the variation of electric capacity specific inductive capacity, and then electric capacity is also changed.In order to improve the response time, heating resistor E be placed on electric capacity below, can improve response speed by adding the aqueous vapor in the heat abstraction sensitization capacitance.Because electric capacitance change is very little, it is that gated amplifier also is made on the chip that an integrated capacitance amplifies.The present invention is by the humidity sensitive capacitor C
x, capacitor C
Ref, metal-oxide-semiconductor M
1, M
2,, M
3, M
4,, M
5Reach resistance R, output capacitance C
oForm capacitor C
RefA termination signal input part V
In, another termination humidity sensitive capacitor C
x, capacitor C
RefWith the humidity sensitive capacitor C
xTie point connect by metal-oxide-semiconductor M
1, M
2,, M
3, M
4,, M
5The input end of the gated amplifier of forming, output capacitance C
oAn end ground connection, the other end is the signal output part of this device, above circuit all is integrated on the chip piece.This integrated capacitance amplifier directly zooms into electric signal with the variation of electric capacity.So reading is easy and disturb little.The principle of work of this circuit is as follows: as drive signal V
InDuring for high level, will be to capacitor C
Ref, the humidity sensitive capacitor C
xCharging.The humidity sensitive capacitor C
xLast voltage satisfies:
Work as C
x＞＞C
RefThe time,
As drive signal V
InWhen constant, voltage and this capacitance are inversely proportional on the sensitization capacitance.This voltage exports on the output capacitance after gating amplifies, thereby obtains the humidity sensitive capacitor C
xLast voltage changes with the numerical value change of sensitization capacitance, and irrelevant with the distributed capacitance of other parts of circuit.
The manufacturing 1 of embodiment 1:CMOS compatible type humidity sensor integrated chip.
At first design sensitization capacitance structure and domain, for the CMOS integrated circuit production technology compatibility of standard, heating resistor adopts the P trap to realize, the silicon layer that bottom electrode adopts high phosphorus to mix up, the electrode of top layer adopts the polycrystalline that heavily mixes up.This polycrystalline is formation of grid of metal-oxide-semiconductor.Medium in the middle of the electric capacity is a field oxide.Total system adopts the P trap CMOS technology of standard to realize.After finishing the flowing water of circuit chip, entire chip covers with silicon nitride and glue and aperture above Fig. 2 is left in photoetching.Adopt on the standard integrated circuit technology buffered hydrofluoric acid solution commonly used to remove oxide layer under the aperture then.Entire chip has just prepared like this.
The manufacturing 2 of embodiment 2:CMOS compatible type humidity sensor integrated chip.
The manufacture method of this chip all is the CMOS technology of standard fully with top the same.It is different with first kind that the sensitization capacitance structure of difference shown in being formed mode.In this structure, heating resistor adopts heavily doped silicon layer.Bottom electrode adopts the polycrystalline that heavily mixes up.This polycrystalline is with the formation of grid of metal-oxide-semiconductor.Medium in the middle of the electric capacity is the oxide layer of low temperature deposition.Upper electrode adopts metal.Total system still can adopt P trap CMOS technology to realize.Metal lead wire adopts the gold layer.After finishing circuit chip flowing water, entire chip covers with silicon nitride and glue and top aperture is left in photoetching.Adopt on the standard integrated circuit technology buffered hydrofluoric acid solution commonly used to remove oxide layer under the aperture then.Entire chip has just prepared like this.Can carry out the scribing pressure welding as required, encapsulation etc. are so that form little measuring system.
Claims (4)
1, a kind of capacity humidometer is characterized in that this device is by humidity sensitive electric capacity (C
x), electric capacity (C
Ref), metal-oxide-semiconductor (M
1, M
2,, M
3, M
4,, M
5) and resistance (R), output capacitance (C
0) form electric capacity (C
Ref) a termination signal input part (V
In), another termination humidity sensitive electric capacity (C
x), electric capacity (C
Ref) and humidity sensitive electric capacity (C
x) tie point connect by metal-oxide-semiconductor (M
1, M
2,, M
3, M
4,, M
5) input end of the gated amplifier formed, output capacitance (C
0) an end ground connection, the other end is the signal output part of this device, above circuit all is integrated on the chip piece.
2, capacity humidometer according to claim 1 is characterized in that humidity sensitive electric capacity (C
x) form by last current-carrying plate (A), lower conducting plate (B), between last current-carrying plate (A) and lower conducting plate (B), leave the space, and separate by propping material (C), on last current-carrying plate, be provided with many apertures (D).
3, capacity humidometer according to claim 1 and 2 is characterized in that humidity sensitive electric capacity (C
x) in, below lower conducting plate (B), be provided with a heating resistor (E), between lower conducting plate (B) and heating resistor (E), be provided with separation layer (F).
4, capacity humidometer according to claim 1 and 2 is characterized in that adopting the CMOS technology of standard with humidity sensitive electric capacity (C
x) and by metal-oxide-semiconductor (M
1, M
2,, M
3, M
4,, M
5) the gating amplifying circuit formed is integrated on the silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021125201A CN1164933C (en) | 2002-01-11 | 2002-01-11 | Capacity humidometer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021125201A CN1164933C (en) | 2002-01-11 | 2002-01-11 | Capacity humidometer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1357759A CN1357759A (en) | 2002-07-10 |
| CN1164933C true CN1164933C (en) | 2004-09-01 |
Family
ID=4742072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021125201A Expired - Fee Related CN1164933C (en) | 2002-01-11 | 2002-01-11 | Capacity humidometer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1164933C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1327215C (en) * | 2005-03-08 | 2007-07-18 | 东南大学 | Relative humidity sensor compatible of CMOS process |
| CN102253091A (en) * | 2011-04-19 | 2011-11-23 | 东南大学 | Capacitive relative humidity sensor based on graphene oxide |
| CN103076372B (en) * | 2012-12-29 | 2015-02-11 | 东南大学 | Capacitive-type humidity sensor |
| CN103630582B (en) * | 2013-12-11 | 2016-02-10 | 江苏物联网研究发展中心 | A kind of MEMS humidity sensor and preparation method |
| EP3489646A1 (en) * | 2017-11-23 | 2019-05-29 | AT & S Austria Technologie & Systemtechnik Aktiengesellschaft | Determining a physical quantity by means of a native component carrier |
-
2002
- 2002-01-11 CN CNB021125201A patent/CN1164933C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1357759A (en) | 2002-07-10 |
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Granted publication date: 20040901 Termination date: 20210111 |
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| CF01 | Termination of patent right due to non-payment of annual fee |