CN116454179A - Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode - Google Patents

Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode Download PDF

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CN116454179A
CN116454179A CN202310699550.6A CN202310699550A CN116454179A CN 116454179 A CN116454179 A CN 116454179A CN 202310699550 A CN202310699550 A CN 202310699550A CN 116454179 A CN116454179 A CN 116454179A
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layer
algan
emitting diode
light
quantum
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CN116454179B (en
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程龙
郑文杰
高虹
刘春杨
胡加辉
金从龙
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Jiangxi Zhao Chi Semiconductor Co Ltd
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Jiangxi Zhao Chi Semiconductor Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract

The invention discloses a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode, and relates to the field of semiconductor photoelectric devices. The light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, an undoped AlGaN layer, an N-type AlGaN layer, an active layer, an electron blocking layer, a P-type AlGaN layer and a P-type contact layer which are sequentially deposited on the substrate; the active layer includes a plurality of quantum well layers and quantum barrier layers alternately stacked; each quantum well layer comprises a Si-doped AlN layer, an Al quantum dot layer, an AlGaN wrapping layer and an AlGaN covering layer which are sequentially laminated; the AlN quantum dot layer comprises a plurality of Al quantum dots distributed on the Si-doped AlN layer in an array manner; the AlGaN wrapping layer comprises a plurality of AlGaN wrapping shells wrapped on the Al quantum dots one by one. By implementing the invention, the luminous efficiency of the light-emitting diode can be effectively improved.

Description

Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode
Technical Field
The invention relates to the field of semiconductor photoelectric devices, in particular to a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode.
Background
Currently, an ultraviolet LED mainly adopts AlGaN as a main growth material, and an epitaxial structure thereof specifically comprises an AlN buffer layer, an undoped AlGaN layer, an N-type AlGaN layer, an active layer, an electron blocking layer, a P-type AlGaN layer and a P-type contact layer. Among them, the active layer (multiple quantum well layer) is made of AlGaN, and it is difficult to prepare an AlGaN thin film with high crystal quality because Al atoms have a large viscosity coefficient and low mobility. Therefore, a large spontaneous polarization and a built-in electric field caused by piezoelectric polarization effect exist in the AlGaN multi-quantum well, so that the energy band of the quantum well is bent, the electron hole wave function is separated in space, the radiation recombination efficiency of electron holes is reduced, and the luminous efficiency is reduced.
Disclosure of Invention
The invention aims to solve the technical problem of providing a light-emitting diode epitaxial wafer and a preparation method thereof, which can effectively improve the luminous efficiency.
The invention also solves the technical problem of providing a light-emitting diode with high luminous efficiency.
In order to solve the problems, the invention discloses a light-emitting diode epitaxial wafer, which comprises a substrate, and a buffer layer, an undoped AlGaN layer, an N-type AlGaN layer, an active layer, an electron blocking layer, a P-type AlGaN layer and a P-type contact layer which are sequentially deposited on the substrate; the active layer includes a plurality of quantum well layers and quantum barrier layers alternately stacked; each quantum well layer comprises a Si doped AlN layer, an Al quantum dot layer, an AlGaN wrapping layer and an AlGaN covering layer which are sequentially laminated;
the AlN quantum dot layer comprises a plurality of Al quantum dots distributed on the Si-doped AlN layer in an array manner; the AlGaN wrapping layer comprises a plurality of AlGaN wrapping shells wrapped on the Al quantum dots one by one.
As an improvement of the technical scheme, the ratio of the Al component in the AlGaN cladding layer is larger than that in the AlGaN cladding layer.
As an improvement of the technical scheme, the Al component in the AlGaN coating layer accounts for 0.4-0.45, and the Al component in the AlGaN coating layer accounts for 0.25-0.4.
As an improvement of the technical scheme, the thickness of the Si-doped AlN layer is 0.1-10 nm, and the Si doping concentration is 1 multiplied by 10 16 cm -3 ~1×10 18 cm -3 ；
The height of the Al quantum dots is 0.1 nm-5 nm, and the distance between adjacent Al quantum dots is 10 nm-30 nm;
the thickness of the AlGaN wrapping shell is 0.5 nm-10 nm;
the thickness of the AlGaN covering layer is 0.5 nm-4.5 nm.
As an improvement of the technical scheme, the cross section of the AlGaN wrapping shell is spherical or hemispherical.
As an improvement of the technical scheme, the stacking cycle number of the active layer is 2-20;
the quantum barrier layer is Al x Ga 1-x And an N layer having a thickness of 3nm to 15nm and x=0.6 to 0.8.
Correspondingly, the invention also discloses a preparation method of the light-emitting diode epitaxial wafer, which is used for preparing the light-emitting diode epitaxial wafer and comprises the following steps:
providing a substrate, and sequentially growing a buffer layer, an undoped AlGaN layer, an N-type AlGaN layer, an active layer, an electron blocking layer, a P-type AlGaN layer and a P-type contact layer on the substrate; the active layer includes a plurality of quantum well layers and quantum barrier layers alternately stacked;
each quantum well layer comprises a Si-doped AlN layer, an Al quantum dot layer, an AlGaN wrapping layer and an AlGaN covering layer which are sequentially laminated;
the AlN quantum dot layer comprises a plurality of Al quantum dots distributed on the Si-doped AlN layer in an array manner; the AlGaN wrapping layer comprises a plurality of AlGaN wrapping shells wrapped on the Al quantum dots one by one.
As an improvement of the technical scheme, the growth temperature of the Si-doped AlN layer is 900-1100 ℃, and the growth pressure is 50-300 torr;
the growth temperature of the Al quantum dot layer is 850-950 ℃ and the growth pressure is 300-500 torr;
the growth temperature of the AlGaN wrapping layer is 800-900 ℃, the growth pressure is 300-500 torr, and the V/III ratio is 500-1500;
the growth temperature of the AlGaN coating is 1000-1200 ℃, the growth pressure is 50-300 torr, and the V/III ratio is 2000-3000.
As an improvement of the technical proposal, the growth atmosphere of the Si-doped AlN layer and the AlGaN coating layer is N 2 And NH 3 Is a mixed gas of (a) and (b); wherein N is 2 And NH 3 The volume ratio of (2) is 1:10-10:1.
Correspondingly, the invention also discloses a light-emitting diode, which comprises the light-emitting diode epitaxial wafer.
The implementation of the invention has the following beneficial effects:
1. in the light-emitting diode epitaxial wafer, each quantum well layer comprises a Si-doped AlN layer, an Al quantum dot layer, an AlGaN wrapping layer and an AlGaN covering layer; si is introduced into the Si-doped AlN layer, so that a piezoelectric field caused by mismatch stress can be effectively shielded, the adverse effect of QCSE effect is relieved, and the radiation recombination efficiency is improved. In addition, the Si-doped AlN layer provides a flat surface for the subsequent Al quantum dot layer, reduces the contact angle of the Al quantum dot layer, and avoids agglomeration of Al atoms in the Al quantum dot layer caused by too low migration rate of the Al atoms. The Al quantum dot layer ensures the distribution density of the AlGaN wrapping layer deposited later, and avoids the problem of crystal quality reduction caused by premature fusion of AlGaN wrapping shells in the AlGaN wrapping layer. The AlGaN coating promotes the uniform distribution of Al components in the subsequent AlGaN coating, avoids the aggregation of Al atoms, and strengthens the localized effect of the quantum well. Therefore, by relieving the adverse effect of the QCSE effect, the crystal lattice quality is improved, the radiation recombination efficiency is improved, and the luminous efficiency of the light-emitting diode epitaxial wafer is effectively improved.
2. The AlGaN wrapping layer comprises a plurality of mutually separated AlGaN wrapping shells, so that stress can be effectively released, and adverse effects of QCSE effect are weakened. And the proportion of the Al component in the AlGaN wrapping layer is larger than that in the AlGaN wrapping layer, so that lattice mismatch among the Si-doped AlN layer, the Al quantum dot layer and the AlGaN wrapping layer is effectively relieved, adverse effects of QCSE effect are further weakened, and the luminous efficiency of the light-emitting diode is improved.
3. In the light-emitting diode epitaxial wafer, the thickness of the AlGaN covering layer is controlled to be 0.5-4.5 nm, the thickness is smaller than the Debroil wavelength of electrons, the energy levels of the electrons and the holes are discrete quantized energy levels, and the light-emitting diode epitaxial wafer has obvious quantum limiting effect, so that the radiation recombination rate is improved, and the light-emitting efficiency is improved.
Drawings
Fig. 1 is a schematic structural diagram of an led epitaxial wafer according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a quantum well layer according to an embodiment of the present invention;
fig. 3 is a flowchart of a method for manufacturing an led epitaxial wafer according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail below in order to make the objects, technical solutions and advantages of the present invention more apparent.
Referring to fig. 1 and 2, the invention discloses a light emitting diode epitaxial wafer, which comprises a substrate 1, and a buffer layer 2, an undoped AlGaN layer 3, an N-type AlGaN layer 4, an active layer 5, an electron blocking layer 6, a P-type AlGaN layer 7 and a P-type contact layer 8 which are sequentially deposited on the substrate 1. The active layer 5 is of a periodic structure, and the period number is 2-20. The active layer 5 of each period includes a quantum well layer 51 and a quantum barrier layer 52 stacked in order. Each quantum well layer 51 includes a Si-doped AlN layer 511, an Al quantum dot layer 512, an AlGaN cladding layer 513, and an AlGaN cladding layer 514, which are sequentially stacked.
The Al atoms have a high viscosity coefficient and low mobility. The crystal quality of the AlGaN material film is low, so that a piezoelectric field caused by larger lattice mismatch exists in the traditional AlGaN material active layer, and the QCSE effect is strong. The Si-doped AlN layer 511 is firstly introduced, which can effectively shield the piezoelectric field caused by mismatch stress, relieve the adverse effect of QCSE effect,the radiation recombination efficiency is improved. In addition, the Si-doped AlN layer 511 provides a flat surface for the subsequent Al quantum dot layer 512, reduces the contact angle of the Al quantum dot layer 512, and avoids agglomeration of Al atoms in the Al quantum dot layer 512 caused by too low migration rate of the Al atoms. Specifically, the Si doping concentration in the Si-doped AlN layer 511 is 5×10 15 cm -3 ~5×10 18 cm -3 When the Si doping concentration is less than 5×10 15 cm -3 In this case, it is difficult to effectively weaken the piezoelectric field; when the Si doping concentration is more than 5 multiplied by 10 18 cm -3 In this case, the electron concentration in the active layer 5 is too high, which reduces the radiation recombination efficiency and reduces the luminous efficiency. Exemplary, the Si doping concentration in the Si-doped AlN layer 511 is 7×10 15 cm -3 、2×10 16 cm -3 、8×10 16 cm -3 、3×10 17 cm -3 、8×10 17 cm -3 Or 4X 10 18 cm -3 But is not limited thereto. Preferably 1X 10 16 cm -3 ~1×10 18 cm -3 。
The thickness of the Si-doped AlN layer 511 is 0.1nm to 15nm, and is exemplified by, but not limited to, 0.5nm, 2nm, 4nm, 8nm, 10nm, 12nm or 14 nm. Preferably 0.1nm to 10nm.
The Al quantum dot layer 512 includes a plurality of Al quantum dots 512a distributed on the Si-doped AlN layer 511 in an array, and the Al quantum dots 512a have a three-dimensional structure, which not only serves as a distribution basis of the subsequent AlGaN cladding layer 513, but also optimizes uniform distribution of Al components; but also stress can be released from multiple directions, weakening the QCSE effect. Specifically, the distance between adjacent Al quantum dots 512a is 5nm to 50nm, and when the distance is less than 5nm, the subsequently grown AlGaN cladding layer 513 is easy to merge and grow into a continuous layer structure, and has a weak effect on the uniform distribution of Al. When the distance is more than 50nm, the stress release effect is poor. Illustratively, the distance between adjacent Al quantum dots 512a is 8nm, 10nm, 14nm, 22nm, 31nm, 42nm, or 44nm, but is not limited thereto. Preferably, the distance between adjacent Al quantum dots 512a is 10 nm-30 nm.
The Al quantum dot 512a has a circular, triangular, rectangular, trapezoidal or polygonal cross section (the number of sides is 5 or more), but is not limited thereto. Preferably circular, semicircular, or rectangular at the bottom and semicircular at the top; this shape can better relieve stress.
The height of the Al quantum dots 512a is 0.1nm to 10nm, and exemplary are 0.3nm, 0.8nm, 2nm, 3nm, 5nm, 7nm or 9nm, but not limited thereto. Preferably 0.1nm to 5nm. Note that, the height of the Al quantum dot 512a refers to the distance from the bottommost portion of the Al quantum dot 512a (i.e., the Si-doped AlN layer 511) to the topmost portion.
Wherein, the AlGaN cladding layer 513 includes a plurality of AlGaN cladding shells 513a that are wrapped on the Al quantum dots 512a in a one-to-one correspondence. AlGaN cladding 513a is adapted with Al quantum dots 512 a. That is, the cross section of the AlGaN wrapping case 513a is circular, triangular, rectangular, trapezoidal, or polygonal (the number of sides. Gtoreq.5), but is not limited thereto. Preferably circular, semi-circular, or rectangular at the bottom and semi-circular at the top.
The thickness of the AlGaN package 513a is 0.5nm to 15nm, and exemplary is 0.8nm, 1.5nm, 3nm, 5nm, 8nm, 10nm, or 13nm, but is not limited thereto. Preferably 0.5nm to 10nm.
The Al composition in the AlGaN cladding layer 513 has a ratio of 0.38 to 0.48 (i.e., molar ratio of Al composition), and exemplary is 0.39, 0.41, 0.43, 0.45, or 0.47, but is not limited thereto. Preferably 0.4 to 0.45.
Wherein the AlGaN cap layer 514 is overlaid on the Si-doped AlN layer 511, the AlGaN cladding layer 513, i.e., it completely covers the exposed Si-doped AlN layer 511 and AlGaN cladding layer 513. The AlGaN cladding layer 514 has a thickness of 0.5nm to 10nm, and is exemplified by, but not limited to, 1nm, 2nm, 3nm, 4nm, 5nm, 7nm, or 8nm. Preferably, in an embodiment of the present invention, the thickness of the AlGaN cladding layer 514 is 0.5nm to 4.5nm, and based on the thickness, the quantum confinement effect can be significantly improved, and the light emitting efficiency of the light emitting diode epitaxial wafer can be improved.
The Al composition ratio (i.e., molar ratio of Al composition) in the AlGaN cladding layer 514 is 0.2 to 0.45, and exemplary is 0.22, 0.25, 0.27, 0.32, 0.36, 0.4 or 0.44, but not limited thereto. Preferably 0.25 to 0.4.
Preferably, in one embodiment of the present invention, the ratio of the Al component in the AlGaN cladding layer 513 is greater than the ratio of the Al component in the AlGaN cladding layer 514, and based on this arrangement, the lattice mismatch can be further alleviated, and the light emitting efficiency of the light emitting diode epitaxial wafer can be improved.
Wherein the quantum barrier layer 52 is Al x Ga 1-x N layers (x=0.55 to 0.8) having a thickness of 3nm to 15nm, and exemplary are 4nm, 7nm, 10nm, 11nm, or 14nm, but are not limited thereto.
Wherein the substrate 1 is a sapphire substrate, a silicon substrate, or Ga 2 O 3 A substrate, a SiC substrate, or a ZnO substrate, but is not limited thereto. A sapphire substrate is preferred.
The buffer layer 2 is an AlN layer having a thickness of 20nm to 200nm, and exemplary is 30nm, 60nm, 90nm, 120nm, 150nm or 180nm, but not limited thereto.
The undoped AlGaN layer 3 has a thickness of 1 μm to 5 μm, and is exemplified by but not limited to 1.4 μm, 1.8 μm, 2.2 μm, 2.6 μm, 3 μm, 3.5 μm, 4 μm, 4.2 μm, or 4.6 μm.
The N-type AlGaN layer 4 can provide electrons, and thus, the electrons and holes are recombined in the active layer 5 to emit light. Specifically, the N-type doping element in the N-type AlGaN layer 4 is Si, but is not limited thereto. The doping concentration of the N-type doping element in the N-type AlGaN layer 4 is 1×10 19 cm -3 ~5×10 20 cm -3 Exemplary is 3.5X10 19 cm -3 、5×10 19 cm -3 、2×10 20 cm -3 、3×10 20 cm -3 、3.5×10 20 cm -3 Or 4.5X10 20 cm -3 But is not limited thereto. Specifically, the thickness of the N-type AlGaN layer 4 is 1 μm to 5 μm, and exemplary thicknesses are 1.4 μm, 1.8 μm, 2.2 μm, 2.6 μm, 3 μm, 3.5 μm, 4 μm, 4.2 μm, or 4.6 μm, but not limited thereto.
Wherein the electron blocking layer 6 is Al y Ga 1-y N layers (y=0.7 to 0.9), but is not limited thereto. Specifically, the thickness of the electron blocking layer 6 is 10nm to 100nm, and is exemplified by, but not limited to, 15nm, 30nm, 45nm, 60nm, 75nm, or 90 nm.
The P-type doping element of the P-type AlGaN layer 7 is Mg, but is not limited thereto. The doping concentration of the P-type element in the P-type AlGaN layer 7 is 5 multiplied by 10 19 cm -3 ~8×10 20 cm -3 ShowingExemplary is 6X 10 19 cm -3 、8×10 19 cm -3 、1×10 20 cm -3 、3×10 20 cm -3 、5×10 20 cm -3 Or 7X 10 20 cm -3 But is not limited thereto. The thickness of the P-type AlGaN layer 7 is 20nm to 200nm, and is exemplified by 40nm, 60nm, 80nm, 120nm, 140nm, or 180nm, but not limited thereto.
The P-type contact layer 8 is a P-AlGaN layer with high doping concentration. Specifically, the P-type doping element of the P-type contact layer 8 is Mg, but is not limited thereto. The doping concentration of the P-type element in the P-type contact layer 8 is 8 multiplied by 10 19 cm -3 ~2×10 21 cm -3 Exemplary is 9X 10 19 cm -3 、2×10 20 cm -3 、4×10 20 cm -3 、8×10 20 cm -3 Or 1X 10 21 cm -3 But is not limited thereto. The thickness of the P-type contact layer 8 is 5nm to 50nm, and is exemplified by 7nm, 15nm, 30nm, 40nm, or 45nm, but not limited thereto.
Correspondingly, referring to fig. 3, the invention also discloses a preparation method of the light-emitting diode epitaxial wafer, which is used for preparing the light-emitting diode epitaxial wafer and comprises the following steps:
s1: providing a substrate;
s2: sequentially growing a buffer layer, an undoped AlGaN layer, an N-type AlGaN layer, an active layer, an electron blocking layer, a P-type AlGaN layer and a P-type contact layer on a substrate;
specifically, S2 includes:
s21: growing a buffer layer on a substrate;
wherein in one embodiment of the present invention, an AlN layer is grown by PVD as a buffer layer, but is not limited thereto.
S22: growing an undoped AlGaN layer on the buffer layer;
in one embodiment of the present invention, the undoped AlGaN layer is grown by MOCVD, the growth temperature is 1000 ℃ to 1300 ℃, and the growth pressure is 50torr to 500torr, but not limited thereto.
S23: growing an N-type AlGaN layer on the undoped AlGaN layer;
in one embodiment of the present invention, the N-type AlGaN layer is grown by MOCVD, the growth temperature is 1000 ℃ to 1300 ℃, and the growth pressure is 50torr to 500torr, but not limited thereto.
S24: growing an active layer on the N-type AlGaN layer;
in one embodiment of the present invention, the active layer is obtained by periodically growing a plurality of quantum well layers and quantum barrier layers through MOCVD. The growth temperature of the quantum barrier layer is 1000-1300 ℃, and the growth pressure is 100-500 torr, but is not limited to this.
The growth method of each quantum well layer comprises the following steps:
(I) Growing a Si-doped AlN layer;
among them, the Si-doped AlN layer may be grown by PVD or MOCVD, but is not limited thereto. Preferably, in one embodiment of the present invention, the Si-doped AlN layer is grown by MOCVD at a growth temperature of 900-1100 ℃ and a growth pressure of 50-300 torr.
Preferably, the growth atmosphere of the Si-doped AlN layer is N 2 And NH 3 Is a mixed gas of (a) and (b); wherein N is 2 And NH 3 The volume ratio of (2) is 1:10-10:1.
(II) growing an Al quantum dot layer on the Si-doped AlN layer;
in one embodiment of the invention, an Al quantum dot layer is grown by MOCVD, wherein the growth temperature is 850-950 ℃ and the growth pressure is 300-500 torr; the three-dimensional growth can be promoted by a low-temperature high-pressure growth mode.
In the invention, since the Si doped AlN layer is introduced in the preamble, when the Si doped AlN layer grows on the N-type AlGaN layer or the quantum barrier layer made of AlGaN, the Si doped AlN layer grows in a two-dimensional lamellar mode firstly, and then a certain strain is accumulated due to lattice mismatch. When the Al quantum dot layer is grown in the later period, a three-dimensional island is formed on the Si doped AlN layer grown in the two-dimensional lamellar mode so as to release the strain. In addition, the carrier of the three-dimensional island is limited due to the large forbidden bandwidth of the Si-doped AlN layer. Therefore, a plurality of Al quantum dots are grown and formed, and an Al quantum dot layer is obtained.
(III) growing an AlGaN wrapping layer on the Al quantum dot layer;
in one embodiment of the invention, the AlGaN wrapping layer is grown by MOCVD, the growth temperature is 800-900 ℃, the growth pressure is 300-500 torr, and the V/III ratio is 500-1500; the three-dimensional growth can be promoted by a low-temperature Gao Yadi V/III ratio growth mode.
(iv) growing an AlGaN cladding layer on the AlGaN cladding layer;
in one embodiment of the invention, the AlGaN coating is grown by MOCVD at a growth temperature of 1000-1200 ℃, a growth pressure of 50-300 torr and a V/III ratio of 2000-3000. And (3) promoting two-dimensional growth by a high-temperature low-pressure high-V/III ratio growth mode, so that the AlGaN coating layer is tiled to cover the surface of the substrate obtained in the whole step (III).
Preferably, the growth atmosphere of the AlGaN coating layer is N 2 And NH 3 Is a mixed gas of (a) and (b); wherein N is 2 And NH 3 The volume ratio of (2) is 1:10-10:1.
S25: growing an electron blocking layer on the active layer;
in one embodiment of the invention, the electron blocking layer is grown by MOCVD at a growth temperature of 1000-1100 ℃ and a growth pressure of 100-300 torr.
S26: growing a P-type AlGaN layer on the electron blocking layer;
in one embodiment of the invention, the P-type AlGaN layer is grown by MOCVD at a growth temperature of 1000-1100 ℃ and a growth pressure of 100-600 torr.
S27: growing a P-type contact layer on the P-type AlGaN layer;
in one embodiment of the invention, the P-type contact layer is grown by MOCVD, the growth temperature is 900-1100 ℃, and the growth pressure is 100-600 torr.
The present invention will be further described with reference to specific examples, wherein the preparation equipment used in each example of the present invention is MOCVD, and the carrier gas is high purity H 2 High purity N 2 Or a mixed gas of the two; high purity NH 3 As N source, trimethylgallium (TMGa) and/or triethylgallium (TEGa) as gallium sourceTrimethylaluminum (TMAl) as an aluminum source, silane (SiH) 4 ) As an N-type dopant, magnesium dicyclopentadiene (CP 2 Mg) as P-type dopant.
Example 1
The embodiment provides a light emitting diode epitaxial wafer, referring to fig. 1 and 2, which comprises a substrate 1, and a buffer layer 2, an undoped AlGaN layer 3, an N-type AlGaN layer 4, an active layer 5, an electron blocking layer 6, a P-type AlGaN layer 7 and a P-type contact layer 8 which are sequentially deposited on the substrate 1.
Wherein the substrate 1 is a sapphire substrate. The buffer layer 2 is an AlN layer having a thickness of 100nm. The undoped AlGaN layer 3 has a thickness of 2.4 μm, the N-type AlGaN layer 4 has a thickness of 2 μm, and the Si doping concentration is 3×10 19 cm -3 。
The active layer 5 is formed by alternately stacking a quantum well layer 51 and a quantum barrier layer 52, and the stacking cycle number is 10. The quantum barrier layer 52 is Al x Ga 1-x N layers (x=0.7) with a thickness of 12nm. Each quantum well layer 51 includes a Si-doped AlN layer 511, an Al quantum dot layer 512, an AlGaN cladding layer 513, and an AlGaN cladding layer 514. Wherein the Si doping concentration in the Si-doped AlN layer 511 is 8×10 15 cm -3 The thickness was 12nm. The Al quantum dot layer 512 comprises a plurality of Al quantum dots 512a distributed on the Si-doped AlN layer 511 in an array, the section of each Al quantum dot 512a is semicircular, the distance between every two adjacent Al quantum dots 512a is 9.5nm, and the height of each Al quantum dot 512a is 8nm. The AlGaN cladding layer 513 includes a plurality of AlGaN cladding shells 513a that are wrapped around the Al quantum dots 512a one-to-one. AlGaN cladding 513a is adapted with Al quantum dots 512 a. The thickness of the AlGaN cladding 513a is 12nm, and the ratio of Al component in the AlGaN cladding 513 is 0.4. Wherein the thickness of the AlGaN cap layer 514 is 6nm, and the Al component of the AlGaN cap layer 514 is 0.4.
Wherein the electron blocking layer 6 is Al y Ga 1-y N layers (y=0.8) with a thickness of 30nm. The thickness of the P-type AlGaN layer 7 is 100nm, and the doping concentration of Mg is 7 multiplied by 10 19 cm -3 . The P-type contact layer 8 is a heavy P-type doped AlGaN layer with the Mg doping concentration of 1 multiplied by 10 20 cm -3 The thickness was 10nm.
The preparation method of the light-emitting diode epitaxial wafer in the embodiment comprises the following steps:
(1) Providing a substrate;
(2) Growing a buffer layer on a substrate;
specifically, an AlN layer is sputtered in PVD.
(3) Growing an undoped AlGaN layer on the buffer layer;
wherein, the undoped AlGaN layer is grown by MOCVD, the growth temperature is 1200 ℃, and the growth pressure is 100torr.
(4) Growing an N-type AlGaN layer on the undoped AlGaN layer;
wherein, the N-type AlGaN layer is grown by MOCVD, the growth temperature is 1200 ℃, and the growth pressure is 100torr.
(5) Growing an active layer on the N-type AlGaN layer;
and periodically growing a plurality of quantum well layers and quantum barrier layers through MOCVD to obtain the active layer. Wherein the growth temperature of the quantum barrier layer is 1200 ℃, and the stretching pressure is 200torr.
The growth method of each quantum well layer comprises the following steps:
(I) Growing a Si-doped AlN layer;
wherein, the Si-doped AlN layer is grown by MOCVD, the growth temperature is 920 ℃, and the growth pressure is 200torr. The growth atmosphere is N 2 And NH 3 The volume ratio of the two is 1:5.
(II) growing an Al quantum dot layer on the Si-doped AlN layer;
wherein, the Al quantum dot layer is grown by MOCVD, the growth temperature is 860 ℃ and the growth pressure is 450torr.
(III) growing an AlGaN wrapping layer on the Al quantum dot layer;
wherein, the AlGaN wrapping layer is grown by MOCVD, the growth temperature is 820 ℃, the growth pressure is 480torr, and the V/III ratio is 800.
(iv) growing an AlGaN cladding layer on the AlGaN cladding layer;
wherein, the AlGaN coating is grown by MOCVD, the growth temperature is 1180 ℃, the growth pressure is 110torr, and the V/III ratio is 2700. The growth atmosphere is N 2 And NH 3 The volume ratio of the two is 1:3.
(6) Growing an electron blocking layer on the active layer;
wherein, the electron blocking layer is grown by MOCVD, the growth temperature is 1080 ℃, and the growth pressure is 200torr.
(7) Growing a P-type AlGaN layer on the electron blocking layer;
wherein, the P-type AlGaN layer is grown by MOCVD, the growth temperature is 1050 ℃, and the growth pressure is 200torr.
(8) Growing a P-type contact layer on the P-type AlGaN layer;
wherein, the P-type contact layer is grown by MOCVD, the growth temperature is 1050 ℃, and the growth pressure is 200torr.
Example 2
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 1 in that:
si doping concentration in the Si-doped AlN layer 511 is 7×10 16 cm -3 The thickness was 1nm. The spacing between adjacent Al quantum dots 512a is 15nm, and the height of the Al quantum dots 512a is 0.5nm. The thickness of AlGaN cladding 513a is 1nm. The thickness of the AlGaN cap layer 514 is 3.5nm.
The remainder was the same as in example 1.
Example 3
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 2 in that:
the Al component in the AlGaN cladding layer was 0.42, and the Al component in the AlGaN cladding layer was 0.35.
The remainder was the same as in example 2.
Example 4
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 1 in that:
the growth atmosphere of the Si-doped AlN layer and the AlGaN coating layer is NH 3 。
The remainder was the same as in example 1.
Example 5
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 1 in that:
the Al quantum dots 512a have an equilateral triangle cross section.
The remainder was the same as in example 1.
Comparative example 1
This comparative example provides a light emitting diode epitaxial wafer, which differs from example 1 in that:
the quantum barrier layer 52 is Al x Ga 1-x N layers (x=0.6). The quantum well layer 51 is Al z Ga 1-z N layers (z=0.45) with a thickness of 3.5nm. The quantum well layer 51 was prepared by the MOCVD method, and the growth temperature was 1120℃and the growth pressure was 200torr.
The remainder was the same as in example 1.
Comparative example 2
This comparative example provides a light emitting diode epitaxial wafer, which differs from example 1 in that:
the quantum well layer 51 does not include the Si-doped AlN layer 511, and accordingly, the step of preparing the layer is not included in the preparation method. In addition, the Al quantum dot layer 512 is a continuous film layer with a thickness of 9.5nm; the AlGaN cladding layer 513 includes a plurality of AlGaN three-dimensional protrusions having a semicircular cross section, a height of 12nm, and a distance between adjacent ones of 10nm.
The remainder was the same as in example 1.
Comparative example 3
This comparative example provides a light emitting diode epitaxial wafer, which differs from example 1 in that:
the quantum well layer 51 does not include the Al quantum dot layer 512, and accordingly, the step of preparing the layer is not included in the preparation method. In addition, the AlGaN cladding layer 513 includes a plurality of AlGaN three-dimensional protrusions whose cross section is semicircular, whose height is 12nm, and whose distance between adjacent ones is 10nm.
Comparative example 4
This comparative example provides a light emitting diode epitaxial wafer, which differs from example 1 in that:
the quantum well layer 51 does not include the Al quantum dot layer 512 and the AlGaN cladding layer 513. Accordingly, the preparation method does not include the step of preparing the two layers.
Comparative example 5
This comparative example provides a light emitting diode epitaxial wafer, which differs from example 1 in that:
the quantum well layer 51 does not include the AlGaN cladding layer 514. Accordingly, the preparation process does not include a step of preparing the layer.
The light-emitting diode epitaxial wafers obtained in examples 1 to 5 and comparative examples 1 to 5 were subjected to brightness test, and the light efficiency improvement rates of other examples and comparative examples were calculated based on the light-emitting diode epitaxial wafer in comparative example 1, and the specific results are shown in the following table:
the specific results are as follows:
it can be seen from the table that the light-emitting efficiency can be effectively improved after the quantum well layer of the present invention is introduced into the epitaxial structure.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.

Claims (10)

1. A light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, an undoped AlGaN layer, an N-type AlGaN layer, an active layer, an electron blocking layer, a P-type AlGaN layer and a P-type contact layer which are sequentially deposited on the substrate; the active layer includes a plurality of quantum well layers and quantum barrier layers alternately stacked; the quantum well layer is characterized by comprising an Si doped AlN layer, an Al quantum dot layer, an AlGaN wrapping layer and an AlGaN covering layer which are sequentially laminated;
the AlN quantum dot layer comprises a plurality of Al quantum dots distributed on the Si-doped AlN layer in an array manner; the AlGaN wrapping layer comprises a plurality of AlGaN wrapping shells wrapped on the Al quantum dots one by one.
2. The light-emitting diode epitaxial wafer of claim 1, wherein the Al composition in the AlGaN cladding layer has a larger ratio than the Al composition in the AlGaN cladding layer.
3. The light-emitting diode epitaxial wafer of claim 1, wherein the Al composition ratio in the AlGaN cladding layer is 0.4-0.45, and the Al composition ratio in the AlGaN cladding layer is 0.25-0.4.
4. A light emitting diode epitaxial wafer according to any one of claims 1 to 3 wherein the Si-doped AlN layer has a thickness of 0.1nm to 10nm and a Si doping concentration of 1 x 10 16 cm -3 ~1×10 18 cm -3 ；
The height of the Al quantum dots is 0.1 nm-5 nm, and the distance between adjacent Al quantum dots is 10 nm-30 nm;
the thickness of the AlGaN wrapping shell is 0.5 nm-10 nm;
the thickness of the AlGaN covering layer is 0.5 nm-4.5 nm.
5. The light-emitting diode epitaxial wafer of claim 1, wherein the AlGaN cladding shell has a spherical or hemispherical cross-sectional shape.
6. The light-emitting diode epitaxial wafer of claim 1, wherein the number of lamination cycles of the active layer is 2-20;
the quantum barrier layer is Al x Ga 1-x And an N layer having a thickness of 3nm to 15nm and x=0.6 to 0.8.
7. A method for preparing a light-emitting diode epitaxial wafer, which is used for preparing the light-emitting diode epitaxial wafer according to any one of claims 1 to 6, and is characterized by comprising the following steps:
providing a substrate, and sequentially growing a buffer layer, an undoped AlGaN layer, an N-type AlGaN layer, an active layer, an electron blocking layer, a P-type AlGaN layer and a P-type contact layer on the substrate; the active layer includes a plurality of quantum well layers and quantum barrier layers alternately stacked;
each quantum well layer comprises a Si-doped AlN layer, an Al quantum dot layer, an AlGaN wrapping layer and an AlGaN covering layer which are sequentially laminated;
the AlN quantum dot layer comprises a plurality of Al quantum dots distributed on the Si-doped AlN layer in an array manner; the AlGaN wrapping layer comprises a plurality of AlGaN wrapping shells wrapped on the Al quantum dots one by one.
8. The method for preparing a light-emitting diode epitaxial wafer according to claim 7, wherein the growth temperature of the Si-doped AlN layer is 900-1100 ℃ and the growth pressure is 50-300 torr;
the growth temperature of the Al quantum dot layer is 850-950 ℃ and the growth pressure is 300-500 torr;
the growth temperature of the AlGaN wrapping layer is 800-900 ℃, the growth pressure is 300-500 torr, and the V/III ratio is 500-1500;
the growth temperature of the AlGaN coating is 1000-1200 ℃, the growth pressure is 50-300 torr, and the V/III ratio is 2000-3000.
9. The method for preparing a light-emitting diode epitaxial wafer according to claim 7, wherein the growth atmosphere of the Si-doped AlN layer and the AlGaN coating layer is N 2 And NH 3 Is a mixed gas of (a) and (b); wherein N is 2 And NH 3 The volume ratio of (2) is 1:10-10:1.
10. A light emitting diode comprising the light emitting diode epitaxial wafer according to any one of claims 1 to 6.
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