CN116449644A - Photomask, photomask set and patterning method - Google Patents
Photomask, photomask set and patterning method Download PDFInfo
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- CN116449644A CN116449644A CN202210017523.1A CN202210017523A CN116449644A CN 116449644 A CN116449644 A CN 116449644A CN 202210017523 A CN202210017523 A CN 202210017523A CN 116449644 A CN116449644 A CN 116449644A
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000000059 patterning Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims description 16
- 238000010586 diagram Methods 0.000 description 27
- 238000005530 etching Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
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- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The present disclosure provides a photomask, a photomask set, and a patterning method. The photomask includes: a plurality of first stripe patterns extending and arranged along a first direction and a plurality of first auxiliary patterns spaced and arranged along the first direction; the first bar patterns and the first auxiliary patterns are overlapped and arranged along the first direction, the first auxiliary patterns and the first bar patterns are provided with overlapping areas, and at the edges of the overlapping areas, the first auxiliary patterns are provided with protruding parts which are not covered by the first bar patterns. According to the technical scheme, the first auxiliary graph is arranged, and the first protruding part is formed at the edge of the first strip graph. By changing the size and shape of the first protrusions, and thus the shape of the mask, a mask having a desired length ratio in the lateral and longitudinal directions is obtained.
Description
Technical Field
Embodiments of the present disclosure relate to the field of semiconductor manufacturing, and more particularly, to a photomask, a photomask set, and a patterning method.
Background
With the continuous development of the semiconductor field, the high-speed, high-integration density and low-power consumption of the dynamic memory are more required. The preparation of contact hole arrays formed by photolithography and etching is a very important technique.
With the shrinking of the contact hole size and the increasing of the array density, the contact hole pattern is generated on the wafer by applying a photoetching-etching-photoetching-etching mode, and for the bit line contact hole, the patterning technology is limited by the size of an active area structure in the dynamic memory, so that a pattern with ideal length proportion in transverse and longitudinal etching cannot be obtained.
Disclosure of Invention
The technical problem to be solved in the present application is to provide a photomask, a photomask set, and a patterning method, so as to obtain a pattern with ideal length ratio in lateral and longitudinal etching.
In order to solve the above-mentioned problems, an embodiment of the present disclosure provides a photomask, including: a plurality of first stripe patterns extending and arranged along a first direction and a plurality of first auxiliary patterns spaced and arranged along the first direction; the first bar patterns and the first auxiliary patterns are overlapped and arranged along the first direction, the first auxiliary patterns and the first bar patterns are provided with overlapping areas, and at the edges of the overlapping areas, the first auxiliary patterns are provided with protruding parts which are not covered by the first bar patterns.
In some embodiments, the mask comprises: the protruding portion comprises at least two protruding sub-portions arranged on different sides of the overlap region.
In some embodiments, the protruding subparts are disposed on opposite sides of the overlap region.
In some embodiments, the protrusion is polygonal.
In some embodiments, the shortest side of the protruding sub-portion has a length in the range of 5-10 nm and the longest side of the protruding sub-portion has an angle in the range of 10-20 ° to the edge of the overlap region.
In some embodiments, the protrusion is polygonal.
The embodiment of the disclosure also provides a photomask set, which comprises: the first photomask is provided with a plurality of first strip-shaped patterns extending and arranged along a first direction and a plurality of first auxiliary patterns spaced and arranged along the first direction; the first strip-shaped patterns and the first auxiliary patterns are overlapped and arranged along the first direction, the first auxiliary patterns and the first strip-shaped patterns are provided with a first overlapped area, and the first auxiliary patterns are provided with first protruding parts which are not covered by the first strip-shaped patterns at the edge of the first overlapped area; the second photomask is provided with a plurality of second strip-shaped patterns which are arranged in an extending mode along a second direction and a plurality of second auxiliary patterns which are arranged at intervals along the second direction; the second bar patterns and the second auxiliary patterns are overlapped and arranged along the second direction, the second auxiliary patterns and the second bar patterns are provided with second overlapped areas, and the second auxiliary patterns are provided with second protruding parts which are not covered by the second bar patterns at the edges of the second overlapped areas; when exposing, the first photomask and the second photomask are respectively placed along the first direction and the second direction, the first overlapping area and the second overlapping area are overlapped to form a target overlapping area, and the first protruding part, the second protruding part, the first overlapping area and the second overlapping area are overlapped to form a target pattern.
In some embodiments, the target pattern includes a critical dimension in an X-direction and a critical dimension in a Y-direction, the X-direction and the Y-direction being perpendicular, a length of the critical dimension in the X-direction and the critical dimension in the Y-direction being determined by a shape and a size of the first protrusion, the second protrusion, the first overlap region, and the second overlap region, a ratio of the length of the critical dimension in the X-direction to the length of the critical dimension in the Y-direction being greater than 1.05.
In some embodiments, the first and second protrusions are centrally symmetrically distributed along the target overlap region.
In some embodiments, the first and second protrusions are polygonal.
In some embodiments, the length of the shortest sides of the first and second protrusions ranges from 5 to 10nm, and the angle of the longest side of the protrusions to the edge of the target overlap region ranges from 10 to 20 °.
The embodiment of the disclosure also provides a patterning method, which comprises the following steps: providing a reticle set, the reticle set comprising: the first photomask is provided with a plurality of first strip-shaped patterns extending and arranged along a first direction and a plurality of first auxiliary patterns spaced and arranged along the first direction; the first strip-shaped patterns and the first auxiliary patterns are overlapped and arranged along the first direction, the first auxiliary patterns and the first strip-shaped patterns are provided with a first overlapped area, and the first auxiliary patterns are provided with first protruding parts which are not covered by the first strip-shaped patterns at the edge of the first overlapped area; the second photomask is provided with a plurality of second strip-shaped patterns which are arranged in an extending mode along a second direction and a plurality of second auxiliary patterns which are arranged at intervals along the second direction; the second bar patterns and the second auxiliary patterns are overlapped and arranged along the second direction, the second auxiliary patterns and the second bar patterns are provided with second overlapped areas, and the second auxiliary patterns are provided with second protruding parts which are not covered by the second bar patterns at the edges of the second overlapped areas; when exposing, the first photomask and the second photomask are respectively placed along the first direction and the second direction, the first overlapping area and the second overlapping area are overlapped to form a target overlapping area, and the first protruding part, the second protruding part, the first overlapping area and the second overlapping area are overlapped to form a target pattern; providing a substrate, and forming a mask layer on the substrate; and exposing the mask layer by the photomask set, and forming the target pattern on the mask layer.
In some embodiments, the mask layer includes a first sub-mask layer and a second sub-mask layer, exposing the mask layer with the set of reticles, and forming the target pattern on the mask layer includes: forming a first sub-mask layer on the substrate, exposing the first sub-mask layer by using the first photomask, and forming a first target pattern in the first sub-mask layer; forming a second sub-mask layer on the first sub-mask layer, exposing the second sub-mask layer by using the second photomask, and forming a second target pattern in the second sub-mask layer; and transferring the second target pattern to the first sub-mask layer, and forming the target pattern in the first sub-mask layer.
In some embodiments, the target pattern includes a critical dimension in an X-direction and a critical dimension in a Y-direction, the X-direction and the Y-direction being perpendicular, and the ratio of the length of the critical dimension in the X-direction to the length of the critical dimension in the Y-direction is greater than 1.05 by adjusting the shapes and sizes of the first protrusion, the second protrusion, the first overlap region, and the second overlap region to change the size and shape of the target pattern.
In some embodiments, the first and second protrusions are centrally symmetrically distributed along the target overlap region.
In some embodiments, the first protrusion and the second protrusion are polygonal.
In some embodiments, the first and second protruding shortest sides have a length in the range of 5-10 nm, and the first and second protruding longest sides have an angle in the range of 10-20 ° with the edge of the target overlap region.
According to the technical scheme, the first auxiliary graph is arranged, and the first protruding part is formed at the edge of the first strip graph. By changing the size and shape of the first protrusions, and thus the shape of the mask, a mask having a desired length ratio in the lateral and longitudinal directions is obtained.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure. Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but should be considered part of the specification where appropriate.
Drawings
FIG. 1 is a schematic diagram of a photomask in an embodiment of the present disclosure.
Fig. 2 is a schematic diagram of a photomask in another embodiment of the present disclosure.
FIG. 3 is a schematic diagram of a reticle set in an embodiment of the disclosure.
Fig. 4 is a schematic view of a first mask a in an embodiment of the disclosure.
Fig. 5 is a schematic diagram of a second mask b in an embodiment of the disclosure.
FIG. 6 is a schematic diagram of a target pattern in an embodiment of the present disclosure.
FIG. 7 is a schematic diagram of a patterning method in an embodiment of the present disclosure.
Fig. 8 is a schematic diagram of a patterning method in an embodiment of the present disclosure.
Fig. 9 is a schematic diagram of a patterning method in an embodiment of the present disclosure.
Fig. 10 is a schematic diagram of a patterning method in another embodiment of the present disclosure.
Fig. 11 is a schematic diagram of a patterning method in another embodiment of the present disclosure.
Fig. 12 is a schematic diagram of a patterning method in another embodiment of the present disclosure.
Fig. 13 is a schematic diagram of a patterning method in another embodiment of the present disclosure.
Detailed Description
The following describes in detail a photomask, a photomask set, and a patterning method provided in an embodiment of the present disclosure with reference to the accompanying drawings. The following description of at least one exemplary embodiment is merely exemplary in nature and is in no way intended to limit the disclosure, its application, or uses. That is, those skilled in the art will appreciate that they are merely illustrative of the manner in which they may be used in real time and not exhaustive. Furthermore, the relative arrangement of the components and steps set forth in these embodiments does not limit the scope of the present disclosure unless specifically stated otherwise.
FIG. 1 is a schematic diagram of a photomask in an embodiment of the present disclosure. Referring now to fig. 1, the photomask includes: a plurality of first stripe patterns 11 extending in a first direction m and a plurality of first auxiliary patterns 21 spaced apart in the first direction m; the first stripe pattern 11 and the first auxiliary pattern 21 are arranged to overlap in the first direction m, the first auxiliary pattern 21 and the first stripe pattern 11 have an overlapping area 3, and the first auxiliary pattern 21 has a protrusion 4 not covered by the first stripe pattern 11 at an edge of the overlapping area 3. The mask pattern is changed by changing the size and shape of the first auxiliary pattern 21 to change the size and shape of the protruding portion 4 and the overlap region 3.
In the present embodiment, the first auxiliary pattern 21 is a quadrangle. After the first auxiliary pattern 21 overlaps the first stripe pattern 11, a plurality of protruding portions 4 uncovered by the first stripe pattern 11 are formed at the edge of the overlapping area 3, the protruding portions 4 include at least two protruding sub-portions 411 arranged at different sides of the overlapping area 3, the protruding sub-portions 411 are distributed at opposite sides of the overlapping area 3, and the protruding sub-portions 411 are triangular.
In some embodiments, the length of the shortest side of the protrusion ranges from 5 to 10nm and the angle α of the longest side of the protrusion to the edge of the overlap region ranges from 10 to 20 °.
In other embodiments, the protrusions are polygonal. Fig. 2 is a schematic diagram of a photomask in another embodiment of the present disclosure. Referring to fig. 2, the first auxiliary pattern 21 and the first stripe pattern 11 which are overlapped and arranged along the first direction m have an overlapping region 3, at the edge of the overlapping region 3, the first auxiliary pattern 21 has a protruding portion 4 uncovered by the first stripe pattern 11, the protruding portion 4 includes at least two protruding sub-portions 411 arranged at different sides of the overlapping region 3, the protruding sub-portions 411 are distributed at opposite sides of the overlapping region 3, and the protruding sub-portions 411 are trapezoidal.
In the above-described embodiments, the first auxiliary pattern 21 is provided, whereby the protruding portion 4 is formed at the edge of the first stripe pattern 11. By changing the size and shape of the protruding portion 4, the shape of the mask is changed, and a mask having a desired length ratio in the X direction and the Y direction is obtained.
FIG. 3 is a schematic diagram of a reticle set in an embodiment of the disclosure. Referring now to fig. 3, a mask set includes: the first photomask a and the second photomask b are respectively placed along the first direction m and the second direction n. Fig. 4 is a schematic view of a first mask a in an embodiment of the disclosure. Referring to fig. 4, the first mask a has a plurality of first stripe patterns 11 extending in a first direction m and a plurality of first auxiliary patterns 21 spaced apart from each other in the first direction m; the first stripe patterns 11 and the first auxiliary patterns 21 are overlapped along the first direction m, the first auxiliary patterns 21 and the first stripe patterns 11 have a first overlapped area 31, and the first auxiliary patterns 21 have first protruding portions 41 not covered by the first stripe patterns 11 at edges of the first overlapped area 31. The first mask a includes two or more first protruding portions 41 which are distributed in a central symmetry with the first overlap region 31 as a center. Fig. 5 is a schematic diagram of a second mask b in an embodiment of the disclosure. The second photomask b is provided with a plurality of second strip patterns 12 which are arranged along the second direction n in an extending way and a plurality of second auxiliary patterns 22 which are arranged along the second direction n at intervals; the second stripe patterns 12 and the second auxiliary patterns 22 are overlapped along the second direction n, the second auxiliary patterns 22 and the second stripe patterns 12 have a second overlapped region 32, and the second auxiliary patterns 22 have second protrusions 42 not covered by the second stripe patterns 12 at edges of the second overlapped region 32. The second mask b includes two or more second protrusions 42 which are distributed in a central symmetry with the second overlapping region 32 as a center.
In the present embodiment, the first auxiliary pattern 21 and the second auxiliary pattern 22 are quadrangular. After the first auxiliary pattern 21 overlaps the first stripe pattern 11, a plurality of first protruding portions 41 that are not covered by the first stripe pattern 11 are formed at the edge of the first overlap region 31, the first protruding portions 41 are symmetrically distributed centering around the first overlap region 31, and the first protruding portions 41 are triangular. After the second auxiliary pattern 22 overlaps the second stripe pattern 12, a plurality of second protruding portions 42 that are not covered by the second stripe pattern 12 are formed at the edge of the second overlapping region 32, the second protruding portions 42 are symmetrically distributed centering around the second overlapping region 32, and the second protruding portions 42 are triangular. The shortest side of the first protrusion 41 and/or the second protrusion 42 has a length ranging from 5 to 10nm, and the longest side of the first protrusion 41 and/or the second protrusion 42 has an angle α ranging from 10 to 20 ° with the edge of the target overlapping region ranging from 10 to 20 °. In other embodiments, the first auxiliary pattern may be any polygon, and the second auxiliary pattern may be the same as or different from the first auxiliary pattern in shape or size. The first protruding part formed by overlapping the first auxiliary graph and the first strip graph can be a trapezoid or other polygon, and the second protruding part formed by overlapping the second auxiliary graph and the second strip graph can be the same as the first protruding part in shape or size, or can be any polygon. In some embodiments, the first protrusions and the second protrusions of the reticle set are centrally symmetrically distributed along the target overlap region.
With continued reference to fig. 3, during exposure, the first mask a and the second mask b are respectively placed along the first direction m and the second direction n, the first overlapping region (not shown) and the second overlapping region (not shown) overlap to form the target overlapping region 33, and the first protrusion 41, the second protrusion 42, the first overlapping region (not shown) and the second overlapping region (not shown) overlap to form the target pattern 5.
FIG. 6 is a schematic diagram of a target pattern in an embodiment of the present disclosure. Referring to fig. 6, the target pattern includes a critical dimension X1 in the X direction and a critical dimension Y1 in the Y direction, the X direction and the Y direction being perpendicular, and the ratio of the length of the critical dimension in the X direction to the length of the critical dimension in the Y direction is greater than 1.05 by adjusting the shapes and sizes of the first protrusion 41, the second protrusion 42, the first overlap region (not shown), and the second overlap region (not shown) to change the size and shape of the target pattern. Examples are as follows: when the critical dimension X1 in the X direction needs to be increased, the lengths of the first auxiliary pattern (not shown) and the second auxiliary pattern (not shown) in the X direction may be increased to increase the lengths of the first protrusion 41 and the second protrusion 42 in the X direction, so that the critical dimension X1 of the target pattern in the X direction is correspondingly increased. When the target pattern is an asymmetric pattern, only the length of the first auxiliary pattern or the second auxiliary pattern in the X direction may be adjusted to change the shape of the target pattern in the corresponding region. When the ratio of the critical dimension X1 of the target pattern in the X direction to the critical dimension Y1 of the target pattern in the Y direction needs to be increased, the length of the critical dimension Y1 of the target pattern in the Y direction can be reduced by reducing the angles between the first auxiliary pattern and the first stripe pattern and between the second auxiliary pattern and the second stripe pattern, so that the ratio of the critical dimension X1 of the target pattern in the X direction to the critical dimension Y1 in the Y direction is increased.
In the above-described embodiments, the first and second auxiliary patterns 21 and 22 are provided, so that the first and second protrusions 41 and 42 are formed at the edges of the first and second bar patterns 11 and 12. By changing the sizes and shapes of the first protruding portions 41 and the second protruding portions 42, the shape of the mask set is changed, and a mask set having a desired length ratio in the X direction and the Y direction is obtained.
Fig. 7 is a schematic diagram of a patterning method in an embodiment of the present disclosure. Referring now to fig. 7, a patterning method includes: step S101, providing a photomask set; step S102, providing a substrate, and forming a mask layer on the substrate; step S103, exposing the mask layer by the photomask set to form a target pattern on the mask layer.
Step S101, providing a mask set. FIG. 3 is a schematic diagram of a reticle set in an embodiment of the disclosure. Referring now to fig. 3, a mask set includes: the first photomask a and the second photomask b are respectively placed along the first direction m and the second direction n. Fig. 4 is a schematic view of a first mask a in an embodiment of the disclosure. Referring to fig. 4, the first mask a has a plurality of first stripe patterns 11 extending in a first direction m and a plurality of first auxiliary patterns 21 spaced apart from each other in the first direction m; the first stripe patterns 11 and the first auxiliary patterns 21 are overlapped along the first direction m, the first auxiliary patterns 21 and the first stripe patterns 11 have a first overlapped area 31, and the first auxiliary patterns 21 have first protruding portions 41 not covered by the first stripe patterns 11 at edges of the first overlapped area 31. The first mask a includes two or more first protruding portions 41 which are distributed in a central symmetry with the first overlap region 31 as a center. Fig. 5 is a schematic diagram of a second mask b in an embodiment of the disclosure. The second photomask b is provided with a plurality of second strip patterns 12 which are arranged along the second direction n in an extending way and a plurality of second auxiliary patterns 22 which are arranged along the second direction n at intervals; the second stripe patterns 12 and the second auxiliary patterns 22 are overlapped along the second direction n, the second auxiliary patterns 22 and the second stripe patterns 12 have a second overlapped region 32, and the second auxiliary patterns 22 have second protrusions 42 not covered by the second stripe patterns 12 at edges of the second overlapped region 32. The second mask b includes two or more second protrusions 42 which are distributed in a central symmetry with the second overlapping region 32 as a center.
In the present embodiment, the first auxiliary pattern 21 and the second auxiliary pattern 22 are quadrangular. After the first auxiliary pattern 21 overlaps the first stripe pattern 11, a plurality of first protruding portions 41 that are not covered by the first stripe pattern 11 are formed at the edge of the first overlap region 31, the first protruding portions 41 are symmetrically distributed centering around the first overlap region 31, and the first protruding portions 41 are triangular. After the second auxiliary pattern 22 overlaps the second stripe pattern 12, a plurality of second protruding portions 42 that are not covered by the second stripe pattern 12 are formed at the edge of the second overlapping region 32, the second protruding portions 42 are symmetrically distributed centering around the second overlapping region 32, and the second protruding portions 42 are triangular. The length of the shortest side of the first protrusion 41 and/or the second protrusion 42 ranges from 5 to 10nm, and the angle α of the longest side of the first protrusion 41 and/or the second protrusion 42 to the edge of the target overlapping region ranges from 10 to 20 °. In other embodiments, the first auxiliary pattern may be any polygon, and the second auxiliary pattern may be the same as or different from the first auxiliary pattern in shape or size. The first protruding part formed by overlapping the first auxiliary graph and the first strip graph can be a trapezoid or other polygon, and the second protruding part formed by overlapping the second auxiliary graph and the second strip graph can be the same as the first protruding part in shape or size, or can be any polygon. The photomask set comprises more than two first protruding parts which are distributed in a central symmetry mode and take the first overlapping area as the center and/or more than two second protruding parts which are distributed in a central symmetry mode and take the second overlapping area as the center. In some embodiments, the first protrusions and the second protrusions of the reticle set are centrally symmetrically distributed along the target overlap region.
Step S102, providing a substrate, and forming a mask layer on the substrate. In this embodiment, the mask layer includes a first sub-mask layer and a second sub-mask layer.
Step S103, exposing the mask layer by the photomask set to form a target pattern on the mask layer. Fig. 8 is a schematic diagram of a patterning method in an embodiment of the present disclosure. Referring to fig. 8, the step of exposing the mask layer with the mask set to form a target pattern on the mask layer includes: step S201, forming a first sub-mask layer on a substrate, exposing the first sub-mask layer by a first photomask, and forming a first target pattern in the first sub-mask layer; step S202, forming a second sub-mask layer on the first sub-mask layer, exposing the second sub-mask layer by using a second photomask, and forming a second target pattern in the second sub-mask layer; in step S203, the second target pattern is transferred to the first sub-mask layer, and the target pattern is formed in the first sub-mask layer.
In other embodiments, exposing the mask layer with a set of reticles to form a target pattern on the mask layer includes: exposing the mask layer by using a first photomask to form a first target pattern in the mask layer; and exposing the mask layer by using a second photomask to form a target pattern in the mask layer.
Fig. 9 is a schematic diagram of a patterning method in an embodiment of the present disclosure. Referring next to fig. 9, a substrate 6 is provided, the substrate 6 is a silicon substrate, and a first sub-mask layer (not shown) is formed on the substrate. The first sub-mask layer is exposed with a first photomask to form a first target pattern 81 in the first sub-mask layer. The first mask layer 71 is covered on the first target pattern 81, a second sub-mask layer (not shown) is formed on the first mask layer 71, the second sub-mask layer is exposed with a second photomask, and a second target pattern 82 is formed in the second sub-mask layer. A second mask layer 72 is covered on the second target pattern 82. Fig. 10 is a schematic diagram of a patterning method in another embodiment of the present disclosure. Referring to fig. 10, before the second mask layer 72 is covered on the second target pattern 82, an oxide layer 9 is further deposited on the surface of the second target pattern 82, where the oxide layer 9 is a silicon dioxide layer in this embodiment. Fig. 11 is a schematic diagram of a patterning method in another embodiment of the present disclosure. Referring to fig. 11, a portion of the oxide layer 9, the first mask layer 71 and the first target pattern 81 are etched down along the sidewall of the second target pattern 82, the second target pattern 82 is transferred into the first mask layer 71, and a target pattern 101 is formed in the first mask layer 71. In some embodiments, a third mask layer 73 is formed on the target pattern 101, and the above steps are repeated to form other target patterns. Fig. 12 is a schematic diagram of a patterning method in another embodiment of the present disclosure. Referring to fig. 12, the patterning method further includes forming an active region 111 on the substrate 6 before forming the first sub-mask layer, and forming the target pattern 101 in the above manner. Fig. 13 is a schematic diagram of a patterning method in another embodiment of the present disclosure. Referring next to fig. 13, the target pattern 101 is transferred to the active region 111 and fills the polysilicon layer 121.
In some embodiments, the first reticle is placed across the second reticle while exposing the mask layer. With continued reference to fig. 3, the first mask a and the second mask b are disposed along the first direction m and the second direction n, respectively, the first overlapping region (not shown) and the second overlapping region (not shown) overlap to form the target overlapping region 33, and the first protrusion 41, the second protrusion 42, the first overlapping region (not shown) and the second overlapping region (not shown) overlap to form the target pattern 5.
FIG. 6 is a schematic diagram of a target pattern in an embodiment of the present disclosure. Referring to fig. 6, the target pattern includes a critical dimension X1 in the X direction and a critical dimension Y1 in the Y direction, the X direction and the Y direction being perpendicular, and the ratio of the length of the critical dimension in the X direction to the length of the critical dimension in the Y direction is greater than 1.05 by adjusting the shapes and sizes of the first protrusion 41, the second protrusion 42, the first overlap region (not shown), and the second overlap region (not shown) to change the size and shape of the target pattern. Examples are as follows: when the critical dimension X1 in the X direction needs to be increased, the lengths of the first auxiliary pattern (not shown) and the second auxiliary pattern (not shown) in the X direction may be increased to increase the lengths of the first protrusion 41 and the second protrusion 42 in the X direction, so that the critical dimension X1 of the target pattern in the X direction is correspondingly increased. When the target pattern is an asymmetric pattern, only the length of the first auxiliary pattern or the second auxiliary pattern in the X direction may be adjusted to change the shape of the target pattern in the corresponding region. When the ratio of the critical dimension X1 of the target pattern in the X direction to the critical dimension Y1 of the target pattern in the Y direction needs to be increased, the length of the critical dimension Y1 of the target pattern in the Y direction can be reduced by reducing the angles between the first auxiliary pattern and the first stripe pattern and between the second auxiliary pattern and the second stripe pattern, so that the ratio of the critical dimension X1 of the target pattern in the X direction to the critical dimension Y1 in the Y direction is increased.
In the above-described embodiments, the first and second auxiliary patterns 21 and 22 are provided, so that the first and second protrusions 41 and 42 are formed at the edges of the first and second bar patterns 11 and 12. By changing the sizes and shapes of the first protruding portions 41 and the second protruding portions 42, the shape of the target pattern is changed, and a pattern having a desired length ratio in the etching in the X direction and the Y direction is obtained.
The foregoing is merely a preferred embodiment of the present application and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention and are intended to be comprehended within the scope of the present invention.
Claims (16)
1. A photomask, comprising:
a plurality of first stripe patterns extending and arranged along a first direction and a plurality of first auxiliary patterns spaced and arranged along the first direction;
the first bar patterns and the first auxiliary patterns are overlapped and arranged along the first direction, the first auxiliary patterns and the first bar patterns are provided with overlapping areas, and at the edges of the overlapping areas, the first auxiliary patterns are provided with protruding parts which are not covered by the first bar patterns.
2. The mask of claim 1 wherein the protrusion comprises at least two protrusion sub-portions arranged on different sides of the overlap region.
3. The mask of claim 2 wherein said protruding subparts are disposed on opposite sides of said overlap region.
4. The mask of claim 1 wherein the protrusions are polygonal.
5. The mask of claim 2 wherein the length of the shortest side of the protruding sub-portion ranges from 5 to 10nm and the angle of the longest side of the protruding sub-portion to the edge of the overlap region ranges from 10 to 20 °.
6. A photomask set, comprising:
the first photomask is provided with a plurality of first strip-shaped patterns extending and arranged along a first direction and a plurality of first auxiliary patterns spaced and arranged along the first direction;
the first strip-shaped patterns and the first auxiliary patterns are overlapped and arranged along the first direction, the first auxiliary patterns and the first strip-shaped patterns are provided with a first overlapped area, and the first auxiliary patterns are provided with first protruding parts which are not covered by the first strip-shaped patterns at the edge of the first overlapped area;
the second photomask is provided with a plurality of second strip-shaped patterns which are arranged in an extending mode along a second direction and a plurality of second auxiliary patterns which are arranged at intervals along the second direction;
the second bar patterns and the second auxiliary patterns are overlapped and arranged along the second direction, the second auxiliary patterns and the second bar patterns are provided with second overlapped areas, and the second auxiliary patterns are provided with second protruding parts which are not covered by the second bar patterns at the edges of the second overlapped areas;
when exposing, the first photomask and the second photomask are respectively placed along the first direction and the second direction, the first overlapping area and the second overlapping area are overlapped to form a target overlapping area, and the first protruding part, the second protruding part, the first overlapping area and the second overlapping area are overlapped to form a target pattern.
7. The mask set of claim 6, wherein the target pattern comprises a critical dimension in an X-direction and a critical dimension in a Y-direction, the critical dimension in the X-direction and the critical dimension in the Y-direction being perpendicular, a length of the critical dimension in the X-direction and a length of the critical dimension in the Y-direction being determined by a shape and a size of the first protrusion, the second protrusion, the first overlap region, and the second overlap region, and a ratio of the length of the critical dimension in the X-direction to the length of the critical dimension in the Y-direction being greater than 1.05.
8. The reticle set of claim 6, wherein the first protrusions and the second protrusions are centrally symmetrically distributed along the target overlap region.
9. The reticle set of claim 6, wherein the first protrusion and the second protrusion are polygonal.
10. The reticle set of claim 6, wherein the shortest sides of the first and second protrusions range in length from 5 to 10nm and the longest sides of the first and second protrusions range in angle from 10 to 20 ° from the edge of the target overlap region.
11. A method of patterning, comprising:
providing a mask set according to claim 6;
providing a substrate, and forming a mask layer on the substrate;
and exposing the mask layer by the photomask set, and forming the target pattern on the mask layer.
12. The patterning method of claim 11, wherein said mask layer includes a first sub-mask layer and a second sub-mask layer, exposing said mask layer with said set of reticles, and forming said target pattern on said mask layer includes:
forming a first sub-mask layer on the substrate, exposing the first sub-mask layer by using the first photomask, and forming a first target pattern in the first sub-mask layer;
forming a second sub-mask layer on the first sub-mask layer, exposing the second sub-mask layer by using the second photomask, and forming a second target pattern in the second sub-mask layer;
and transferring the second target pattern to the first sub-mask layer, and forming the target pattern in the first sub-mask layer.
13. The patterning process of claim 11, wherein the target pattern includes an X-direction critical dimension and a Y-direction critical dimension, the X-direction and Y-direction critical dimension being perpendicular, and wherein the ratio of the length of the X-direction critical dimension to the length of the Y-direction critical dimension is greater than 1.05 by adjusting the shape and size of the first protrusion, the second protrusion, the first overlap region, and the second overlap region to change the size and shape of the target pattern.
14. The patterning process of claim 11, wherein said first protrusions and said second protrusions are centrally symmetrically distributed along said target overlap region.
15. The patterning method of claim 11, wherein the first and second protrusions are polygonal.
16. The patterning process of claim 11, wherein said first and second protrusions have a length in the range of 5-10 nm and a longest edge of said first and second protrusions is at an angle in the range of 10-20 ° to an edge of said target overlap region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210017523.1A CN116449644A (en) | 2022-01-07 | 2022-01-07 | Photomask, photomask set and patterning method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210017523.1A CN116449644A (en) | 2022-01-07 | 2022-01-07 | Photomask, photomask set and patterning method |
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| CN116449644A true CN116449644A (en) | 2023-07-18 |
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| CN202210017523.1A Pending CN116449644A (en) | 2022-01-07 | 2022-01-07 | Photomask, photomask set and patterning method |
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