CN116449249A - Silicon carbide MOSFET short circuit detection circuit and device - Google Patents
Silicon carbide MOSFET short circuit detection circuit and device Download PDFInfo
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- CN116449249A CN116449249A CN202310289332.5A CN202310289332A CN116449249A CN 116449249 A CN116449249 A CN 116449249A CN 202310289332 A CN202310289332 A CN 202310289332A CN 116449249 A CN116449249 A CN 116449249A
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- 238000001514 detection method Methods 0.000 title claims abstract description 78
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 77
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 abstract description 9
- 238000010586 diagram Methods 0.000 description 14
- 230000007423 decrease Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
- G01R31/52—Testing for short-circuits, leakage current or ground faults
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention relates to a silicon carbide MOSFET short circuit detection circuit and a device, wherein the detection circuit comprises: silicon carbide MOSFET tubes; the first type short circuit detection unit is connected with the first electrode of the silicon carbide MOSFET and is used for outputting a first fault signal based on drain current; the second type short circuit detection unit is connected with the grid electrode of the silicon carbide MOSFET and is used for outputting a second fault signal based on the grid voltage; and the logic signal processing unit outputs a control signal according to the first fault signal and the second fault signal to control the silicon carbide MOSFET to be turned off. The invention adopts a method combining gate detection and current detection, does not need to adopt an integrating circuit, has high detection speed, and can comprise various short-circuit modes, thereby ensuring more accurate detection results.
Description
Technical Field
The invention relates to the field of circuit design, in particular to a silicon carbide MOSFET short circuit detection circuit and device.
Background
In recent years, the trend in electronic devices is to pursue higher power density and to try to operate in environments with higher temperatures, so as to adapt to the needs of various emerging occasions, such as the fields of electric automobiles, photovoltaic inversion, wind power generation, uninterruptible power supplies and the like. Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has begun to find use in industry, thanks to advances in materials science and manufacturing processes. Silicon carbide MOSFETs offer many advantages over conventional silicon-based devices, such as high breakdown field strength, high thermal conductivity, and high forbidden bandwidth. Therefore, various kinds of wide bandgap semiconductor devices typified by silicon carbide MOSFETs will be increasingly substituted for various kinds of silicon-based devices in the future.
However, the higher switching speed and weaker short-circuit withstand capability of silicon carbide MOSFETs present new challenges to the short-circuit protection technology. Short circuit failure is one of the important causes of failure of silicon carbide MOSFETs, severely hampering their application. Short circuit faults can be classified into hard switching faults (Hard Switching Fault, HSF) and Load faults (full Fault Load, full) according to the time when the short circuit occurs. Silicon carbide MOSFETs are subject to significant short-circuit energy, both when HSF and fus occur. Because of the small area of the silicon carbide MOSFET chip and the large current density, large amounts of energy may burn the silicon carbide MOSFET in a short period of time.
Disclosure of Invention
In view of this, the invention provides a silicon carbide MOSFET short circuit detection circuit and device, which aims to detect two types of short circuit faults by adopting a method combining gate detection and current detection, improve the detection speed and increase the accuracy of detection results.
In order to achieve the above purpose, the invention adopts the following technical scheme:
a silicon carbide MOSFET tube short circuit detection circuit comprising: silicon carbide MOSFET tubes; the first type short circuit detection unit is connected with the first electrode of the silicon carbide MOSFET and is used for outputting a first fault signal based on drain current; the second type short circuit detection unit is connected with the grid electrode of the silicon carbide MOSFET and is used for outputting a second fault signal based on the grid voltage; and the logic signal processing unit outputs a control signal according to the first fault signal and the second fault signal to control the silicon carbide MOSFET to be turned off.
Further, the first type short circuit detection unit comprises a first current mirror unit and a voltage divider subunit, wherein a first input end of the first current mirror unit is connected with a first electrode of the silicon carbide MOSFET, and a second input end of the first current mirror unit is connected with the voltage divider subunit.
Further, the first type short circuit detection unit further comprises a second current mirror unit cascaded with the first current mirror unit.
Further, the voltage dividing subunit comprises a first resistor R connected in series 1 And a second resistor R 2 One end of the voltage dividing subunit is connected with the power supply voltage, and the other end of the voltage dividing subunit is grounded.
Further, the silicon carbide MOSFET short circuit detection circuit further comprises an inverter, and the first type short circuit detection unit is connected with the logic signal processing unit through the inverter.
Further, the second type short circuit detection unit comprises a first comparator, wherein the non-inverting input end of the first comparator is connected with the grid electrode of the silicon carbide MOSFET, and the inverting input end of the first comparator is connected with a first reference voltage V ref_FUL The input end is connected.
Further, the logic signal processing unit includes an or gate, a first input terminal of the or gate is connected to an output terminal of the first type short circuit detecting unit, and a second input terminal of the or gate is connected to an output terminal of the second type short circuit detecting unit.
Further, the silicon carbide MOSFET further comprises a grid control unit, wherein the output end of the OR gate is connected with the grid of the silicon carbide MOSFET through the grid control unit.
Further, an external grid resistor R is arranged between the grid control unit and the grid of the silicon carbide MOSFET 3 。
The application also provides electronic equipment comprising the silicon carbide MOSFET short-circuit detection circuit.
Compared with the prior art, the invention has the beneficial effects that:
the invention adopts a method combining gate detection and current detection based on the voltage/current characteristics of the silicon carbide MOSFET during short circuit, and simultaneously detects two types of short circuit faults, thereby improving the detection speed and increasing the accuracy of the detection result.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 shows a short circuit equivalent circuit diagram of a silicon carbide MOSFET in an embodiment of the present invention;
FIG. 2 shows 4 stages in the process of a short circuit transient in an embodiment of the invention;
FIG. 3 is a schematic diagram of a short circuit detection circuit for a silicon carbide MOSFET in an embodiment of the present invention;
FIG. 4 shows a circuit diagram of a first type of short circuit detection unit in an embodiment of the invention;
FIG. 5 is a timing diagram showing the operation of a second type of short circuit detection unit according to an embodiment of the present invention;
FIG. 6 shows a circuit diagram of a second type of short circuit detection unit in an embodiment of the invention;
FIG. 7 shows a circuit diagram of a logic signal processing unit in an embodiment of the invention;
fig. 8 is a circuit schematic diagram of a gate control unit according to an embodiment of the invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Fig. 1 shows a short circuit equivalent circuit diagram of a silicon carbide MOSFET in an embodiment of the invention. As shown in fig. 1, vgg is the gate voltage source for controlling the pulse duration and turning off the MOSFET, R g Is an external gate resistance, L s Is common source inductance, R DS Is the on-resistance of the high-side MOSFET when operating in its linear region. L (L) loop And L g Parasitic inductances of the power loop and the gate loop, C gd 、C gs And C ds Is the parasitic capacitance between the low side MOSFET electrodes. In normal operation, load current flows through the upper device, the silicon carbide MOSFET is in an off state, and a dc voltage is applied to the silicon carbide MOSFET almost entirely, fig. 2 shows 4 stages in the short circuit transient in an embodiment of the invention.
As shown in FIG. 2, in a first stage S 1 In the process, gate current i g Input capacitance C to start a silicon carbide MOSFET iss Charging, wherein C iss ＝C gs +C gd Resulting in a gate-source voltage V gs Rising. At high drain-source voltage V ds (near DC link voltage V) DC ) Under the action of (C) gs Specific Miller capacitance C gd Larger, thus absorbing most of the gate current i G . With drain current i D Rising, gate-source voltage V gs Reaching the gate threshold voltage V th Second stage S 2 Starting. In the second stage S 2 In the process, with the gate-source voltage V gs Is due to the lower impedance of the power loop, the current i D Rapidly rise and gradually exceed rated current i d And drain-source voltage V ds Due to the common-source inductance L s And the flyback voltage induced by the power loop inductance, the peak value of the short-circuit current is determined by the transconductance of the silicon carbide MOSFET and the gate voltage and the DC bus voltage of the silicon carbide MOSFET.
With the third stage S 3 At the beginning of the drain-source voltage V ds The rise of (1) results in parasitic capacitance C of the device gd Charging and this charging current flows to C gs Resulting in a gate-source voltage V gs And the rate of change of the short-circuit current decreases as the rise continues. In the fourth stage S 3 In the process, after the first two stages, the junction temperature of the device is increased by the huge energy of the short circuit, the output characteristic of the device is affected, and the short circuit current starts to decrease due to the negative temperature coefficient of the whole drift rate until the device is closed or destroyed.
Based on this, the present invention provides a short circuit detection circuit for silicon carbide MOSFET, fig. 3 shows a schematic diagram of a short circuit detection circuit for silicon carbide MOSFET in the embodiment of the present invention, as shown in fig. 3, the short circuit detection circuit includes: a silicon carbide MOSFET Q, a first type short circuit detection unit 100, a second type short circuit detection unit 200 and a logic signal processing unit 300, wherein the silicon carbide MOSFET Q comprises a first electrode, a second electrode and a grid electrode; the first type short circuit detection unit 100 is connected to the first electrode of the silicon carbide MOSFET Q, and is configured to output a first fault signal based on the drain current of the silicon carbide MOSFET Q; the second type short circuit detection unit 200 is connected with the gate of the silicon carbide MOSFET Q, and is configured to output a second fault signal based on the gate voltage of the silicon carbide MOSFET Q; the logic signal processing unit 300 outputs a control signal according to the first fault signal and the second fault signal, and controls the turn-off of the silicon carbide MOSFET Q. As a possible implementation, the first type short circuit detection unit 100 is used for detecting a hard switch Fault (Hard Switching Fault, HSF), and the second type short circuit detection unit 200 is used for detecting a Load Fault (full Fault Load). Based on the voltage/current characteristics of the silicon carbide MOSFET during short circuit, a method combining gate detection and current detection is adopted, and meanwhile, two types of short circuit faults are detected, so that the detection speed is improved, and the accuracy of a detection result is improved.
Further, fig. 4 shows a circuit diagram of a first type of short circuit detection unit in an embodiment of the present invention. As shown in fig. 4, the first short circuit detection unit 100 includes a first current mirror unit and a voltage divider subunit, where a first input end of the first current mirror unit is connected to the first electrode of the silicon carbide MOSFET Q, and a second input end of the first current mirror unit is connected to the voltage divider subunit.
As a specific embodiment, the first current mirror unit includes a first transistor M 1 And a second transistor M 2 The first transistor M 1 Is connected to the first electrode of the silicon carbide MOSFET Q and is connected to the first transistor M 1 Gate connection of the second transistor M 2 Gate of (d) and the first transistor M 1 Gate connection of the first transistor M 1 And the second transistor M 2 The second electrode of the second transistor M is grounded 2 Is connected to the voltage divider subunit, when a hard switching failure (Hard Switching Fault, HSF) short-circuits occur, I D Will rise sharply and even reach rated current I d And thus the current can be replicated using the first current mirror unit.
As a possible implementation, the first type short circuit detection unit 100 further includes a second current mirror unit cascaded with the first current mirror unit, specifically, the second current mirror unit includes a third transistor M 3 And a fourth transistor M 4 The third transistor M 3 And the first transistor M 1 Is connected to the second electrode of the third transistor M 3 Gate connection of the fourth transistor M 4 Gate of (d) and the third transistor M 3 Gate connection of the third transistor M 3 And the fourth transistor M 4 The second electrode of the fourth transistor M is grounded 4 Through the first electrode of the second transistor M 2 And the voltage dividerThe units are connected. By adopting the second current mirror unit cascaded with the first current mirror unit, the current replication can be more stable and accurate, and smaller swing amplitude can be obtained.
Further, the voltage dividing subunit comprises a first resistor R connected in series 1 And a second resistor R 2 One end of the voltage dividing subunit is connected with the power supply voltage VDD, and the other end of the voltage dividing subunit is grounded. When a hard switch failure (Hard Switching Fault, HSF) short occurs, I D A sharp increase, a decrease in resistance at the current mirror, a second resistance R 2 And the total partial voltage of the current mirror becomes smaller, and the first resistor R 1 The voltage division increases and the voltage at the N1 node decreases.
Further, the silicon carbide MOSFET short circuit detection circuit further includes an inverter, and the first type short circuit detection unit 100 is connected to the logic signal processing unit 300 through the inverter. When no short circuit occurs, the inverter output signal is 0, and when a hard switch fault (Hard Switching Fault, HSF) short circuit occurs, the voltage at the N1 node decreases, and the inverter outputs 1 (i.e., the first fault signal).
Further, fig. 5 shows a working timing diagram of the second type short circuit detection unit in the embodiment of the present invention, and fig. 6 shows a circuit diagram of the second type short circuit detection unit in the embodiment of the present invention. As shown in fig. 5, when a Load Fault (fu l) short occurs, the gate voltage of the silicon carbide MOSFET Q may generate a small voltage spike. As shown in fig. 6, the second type short circuit detection unit 200 includes a first comparator U 1 The first comparator U 1 A non-inverting input terminal of the silicon carbide MOSFET Q is connected with the gate of the first comparator U 1 Is connected with the first reference voltage V ref_FUL The input end is connected. When no short circuit occurs, the first comparator U 1 Output 0, when a Load Fault (FUL) short circuit occurs, the first comparator U 1 Output 1 (i.e., the second fault signal).
Further, fig. 7 shows a circuit diagram of a logic signal processing unit in an embodiment of the present invention. As shown in fig. 7, the logic signal processing unit 300 includes an or gate, a first input terminal of the or gate is connected to the output terminal of the first type short circuit detecting unit 100, and a second input terminal of the or gate is connected to the output terminal of the second type short circuit detecting unit 200. When any type of short circuit occurs, a first fault signal and/or a second fault signal are input to an OR gate in the logic signal processing unit, and a short circuit control signal SC is output to the OR gate, so that short circuit protection is triggered.
Further, the silicon carbide MOSFET short circuit detection circuit further includes a gate control unit 400, and the output end of the or gate is connected with the gate of the silicon carbide MOSFET Q through the gate control unit 400. Fig. 8 is a circuit schematic diagram of a gate control unit according to an embodiment of the invention. As shown in fig. 8, the gate control unit 400 includes a fourth resistor R 4 And a control MOSFET having a gate connected to the output of the logic signal processing unit 300, a first electrode connected to the fourth resistor R 4 A second electrode of the control MOSFET is grounded, and a fourth resistor R 4 Is connected to the gate of the silicon carbide MOSFET tube Q. The gate control unit 400 is configured to receive the short circuit control signal SC and turn off the silicon carbide MOSFET Q in the event of a short circuit.
Further, an external grid resistor R is arranged between the grid control unit and the grid of the silicon carbide MOSFET 3 。
The silicon carbide MOSFET short circuit detection circuit adopts a method combining gate detection and current detection, does not need to adopt an integrating circuit, almost outputs fault signals without delay, delays only from the transmission delay of a comparator and a logic device, and has high detection speed.
The application also provides electronic equipment comprising the silicon carbide MOSFET short-circuit detection circuit.
Although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A silicon carbide MOSFET tube short circuit detection circuit, comprising:
silicon carbide MOSFET tubes;
the first type short circuit detection unit is connected with the first electrode of the silicon carbide MOSFET and is used for outputting a first fault signal based on drain current;
the second type short circuit detection unit is connected with the grid electrode of the silicon carbide MOSFET and is used for outputting a second fault signal based on the grid voltage;
and the logic signal processing unit outputs a control signal according to the first fault signal and the second fault signal to control the silicon carbide MOSFET to be turned off.
2. The short circuit detection circuit of silicon carbide MOSFET according to claim 1, wherein the first type of short circuit detection unit comprises a first current mirror unit and a voltage divider subunit, a first input terminal of the first current mirror unit being connected to a first electrode of the silicon carbide MOSFET, and a second input terminal of the first current mirror unit being connected to the voltage divider subunit.
3. A silicon carbide MOSFET tube short detection circuit according to claim 2, wherein the first type of short detection unit further comprises a second current mirror unit cascaded with the first current mirror unit.
4. A silicon carbide MOSFET tube short circuit detection circuit according to claim 2, wherein said voltage divider sub-unit comprises a first resistor R connected in series 1 And a second resistor R 2 One end of the voltage dividing subunit is connected with the power supply voltage, and the other end of the voltage dividing subunit is grounded.
5. The silicon carbide MOSFET tube short circuit detection circuit of claim 1, further comprising an inverter, wherein the first type short circuit detection unit is coupled to the logic signal processing unit through the inverter.
6. The short circuit detection circuit according to claim 1, wherein the second type short circuit detection unit comprises a first comparator having a non-inverting input connected to the gate of the silicon carbide MOSFET, and an inverting input connected to a first reference voltage V ref_FUL The input end is connected.
7. The silicon carbide MOSFET short circuit detection circuit according to claim 1, wherein the logic signal processing unit comprises an or gate, a first input terminal of the or gate being connected to the output terminal of the first type short circuit detection unit, and a second input terminal of the or gate being connected to the output terminal of the second type short circuit detection unit.
8. The short circuit detection circuit of silicon carbide MOSFET according to claim 7, further comprising a gate control unit, wherein the output of the or gate is connected to the gate of the silicon carbide MOSFET by the gate control unit.
9. The short circuit detection circuit for silicon carbide MOSFET according to claim 8, wherein an external gate resistor R is further provided between the gate control unit and the gate of the silicon carbide MOSFET 3 。
10. An electronic device comprising a silicon carbide MOSFET tube short circuit detection circuit according to any one of claims 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310289332.5A CN116449249A (en) | 2023-03-23 | 2023-03-23 | Silicon carbide MOSFET short circuit detection circuit and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310289332.5A CN116449249A (en) | 2023-03-23 | 2023-03-23 | Silicon carbide MOSFET short circuit detection circuit and device |
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| Publication Number | Publication Date |
|---|---|
| CN116449249A true CN116449249A (en) | 2023-07-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202310289332.5A Pending CN116449249A (en) | 2023-03-23 | 2023-03-23 | Silicon carbide MOSFET short circuit detection circuit and device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117590191A (en) * | 2024-01-18 | 2024-02-23 | 上海聚跃检测技术有限公司 | Short circuit detection device based on silicon carbide MOSFET |
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2023
- 2023-03-23 CN CN202310289332.5A patent/CN116449249A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117590191A (en) * | 2024-01-18 | 2024-02-23 | 上海聚跃检测技术有限公司 | Short circuit detection device based on silicon carbide MOSFET |
| CN117590191B (en) * | 2024-01-18 | 2024-05-14 | 上海聚跃检测技术有限公司 | Short circuit detection device based on silicon carbide MOSFET |
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