CN116429254A - Photodiode type laser power meter and preparation method thereof - Google Patents
Photodiode type laser power meter and preparation method thereof Download PDFInfo
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- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/446—Photodiode
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The embodiment of the application relates to the technical field of semiconductor devices, in particular to a photodiode type laser power meter and a preparation method thereof, wherein the photodiode type laser power meter comprises: a substrate, a bottom electrode array structure, an absorption layer and a top electrode array structure which are sequentially stacked on the substrate; the bottom electrode array structure comprises a plurality of bottom electrode array strips which are sequentially arranged along a first direction, and a first interval exists between every two adjacent bottom electrode array strips; the top electrode array structure comprises a plurality of top electrode array strips which are sequentially arranged along a second direction, and second intervals are reserved between adjacent top electrode array strips; the first direction is the width direction of the bottom electrode array strip, and the second direction is the width direction of the top electrode array strip; the second direction is perpendicular to the first direction. According to the embodiment of the application, through the arrangement design of the bottom electrode array structure and the top electrode array structure, electrodes are led out from the pixels, so that the multifunctional detection of the laser power meter is realized, and the detection precision is improved.
Description
Technical Field
The embodiment of the application relates to the technical field of semiconductor devices, in particular to a photodiode type laser power meter and a preparation method thereof.
Background
The laser power meter is a laser power meter adopting a photoelectric detector and is specially designed for detecting the quality of the laser diode assembly and judging the quality of the laser diode assembly. The laser power meter has the characteristics of small volume, high cost performance, convenient use and the like, and along with the development of technology, the laser power meter is gradually developed towards the intelligent direction.
In the current array structure of the photodetector, the top electrode of the pixel is led out from the edge of the pixel, and the electrode lead can be led out from the pixel interval or the bottom of the pixel. The area where the pixel top electrode is located cannot detect signals, occupies pixel space and has negative influence on the detection rate; and the growth process of the top electrode of the pixel is harsh. The lead wire process of the pixel top electrode is complicated, the precision requirement is extremely high, multiple times of photoetching is needed, and the manufacturing cost of the detector is further increased.
Disclosure of Invention
The embodiment of the application provides a photodiode type laser power meter and a preparation method thereof, which realize the multifunctional detection of the laser power meter and improve the detection precision.
To solve the above technical problem, in a first aspect, an embodiment of the present application provides a photodiode type laser power meter, including: a substrate, a bottom electrode array structure, an absorption layer and a top electrode array structure which are sequentially stacked on the substrate; the bottom electrode array structure comprises a plurality of bottom electrode array strips which are sequentially arranged along a first direction, and a first interval exists between every two adjacent bottom electrode array strips; the top electrode array structure comprises a plurality of top electrode array strips which are sequentially arranged along a second direction, and second intervals are reserved between adjacent top electrode array strips; the length direction of the bottom electrode array strip is perpendicular to the length direction of the top electrode array strip; the second direction is perpendicular to the first direction.
In some exemplary embodiments, the material of the absorber layer is a copper-based thin film compound semiconductor material.
In some exemplary embodiments, the material of the absorber layer is Cu 2 Cd x Zn 1-x SnSe 4 。
In some exemplary embodiments, the width of the bottom electrode array strip is equal to the width of the top electrode array strip.
In some exemplary embodiments, the width of the first pitch is equal to the width of the second pitch.
In some exemplary embodiments, the top electrode array strip includes a buffer layer, a window layer, sequentially stacked on an absorber layer; both ends of the buffer layer along the width direction are flush with both ends of the window layer along the width direction.
In some exemplary embodiments, the material of the window layer is zinc oxide or aluminum doped zinc oxide.
In some exemplary embodiments, the window layers include a first window layer and a second window layer superimposed on the first window layer; the first window layer is made of zinc oxide, and the second window layer is made of aluminum doped zinc oxide.
In a second aspect, an embodiment of the present application further provides a method for preparing a photodiode type laser power meter, including the following steps: providing a substrate; forming a bottom electrode material layer on a substrate; etching the bottom electrode material layer to form a bottom electrode array structure; the bottom electrode array structure comprises a plurality of bottom electrode array strips which are sequentially arranged along a first direction, and a first interval exists between every two adjacent bottom electrode array strips; forming an absorption layer on the bottom electrode array structure; forming a top electrode material layer on the absorber layer; etching the top electrode material layer to form a top electrode array structure; the top electrode array structure comprises a plurality of top electrode array strips which are sequentially arranged along a second direction, and second intervals are reserved between adjacent top electrode array strips; the first direction is the width direction of the bottom electrode array strip, and the second direction is the width direction of the top electrode array strip; the second direction is perpendicular to the first direction.
In some exemplary embodiments, forming a top electrode material layer on the absorber layer, etching the top electrode material layer to form a top electrode array structure, comprising: sequentially forming a buffer material layer, a first window material layer and a second window material layer which are arranged in a laminated manner on the absorption layer; and etching the second window material layer, the first window material layer and the buffer material layer simultaneously to form a top electrode array structure.
The technical scheme provided by the embodiment of the application has at least the following advantages:
the embodiment of the application provides a photodiode type laser power meter and a preparation method thereof, wherein the photodiode type laser power meter comprises: a substrate, a bottom electrode array structure, an absorption layer and a top electrode array structure which are sequentially stacked on the substrate; the bottom electrode array structure comprises a plurality of bottom electrode array strips which are sequentially arranged along a first direction, and a first interval exists between every two adjacent bottom electrode array strips; the top electrode array structure comprises a plurality of top electrode array strips which are sequentially arranged along a second direction, and second intervals are reserved between adjacent top electrode array strips; the first direction is the width direction of the bottom electrode array strip, and the second direction is the width direction of the top electrode array strip; the second direction is perpendicular to the first direction.
According to the embodiment of the application, the bottom electrode array structure and the top electrode array structure are formed on the substrate, and the bottom electrode array strips and the top electrode array strips are vertically arranged, so that the bottom electrode array strips and the top electrode array strips are mutually disconnected, detection signals between pixels are mutually independent, and the designed detection function is met. The photodiode type laser power meter provided by the application does not need to lead out the top electrode on the pixel unit, can realize the maximization of the light absorption area of the pixel unit, and solves the problems of complex process and the like caused by the lead wire of the top electrode of the pixel unit. Meanwhile, the bottom electrode array structure and the top electrode array structure in the application can further reduce the pixel spacing and improve the light detection rate; the functions of measuring the laser spot size and positioning the invisible infrared band laser are expanded in the detection function.
Drawings
One or more embodiments are illustrated by way of example and not limitation in the figures of the accompanying drawings, which are not to be construed as limiting the embodiments unless specifically indicated otherwise.
Fig. 1 is a schematic structural diagram of a photodiode type laser power meter according to an embodiment of the present application;
fig. 2 is a schematic diagram of a bottom electrode array structure according to an embodiment of the present disclosure;
FIG. 3 is a top view of a bottom electrode array structure according to an embodiment of the present disclosure;
fig. 4 is a schematic flow chart of a method for manufacturing a photodiode type laser power meter according to an embodiment of the present application;
FIG. 5 is a schematic flow chart of another method for manufacturing a photodiode type laser power meter according to an embodiment of the present application;
FIG. 6 is a flowchart of a method for manufacturing a photodiode type laser power meter according to an embodiment of the present application;
FIG. 7 is a graph of quantum efficiency of a photodiode-type laser power meter according to an embodiment of the present application;
fig. 8 is a cross-sectional view of a scanning electron microscope of an absorber layer material according to an embodiment of the present application.
Detailed Description
As known from the background technology, the existing laser power meter occupies pixel space and negatively affects the detection rate because the area where the pixel top electrode is located cannot detect signals; and the lead wire process of the top electrode of the pixel is complicated, the precision requirement is extremely high, and multiple times of photoetching is needed, so that the manufacturing cost of the detector is increased.
At present, the existing photodiode type laser power meter is mainly based on silicon, germanium, indium gallium arsenic, tellurium cadmium mercury and the like, and the materials cannot meet the detection of visible light and infrared wave bands due to the limitations of the materials, so that the function is single. And some materials have high cost and extremely high requirements on preparation conditions, and some materials have quite scarcity in the crust and are unfavorable for long-term development.
In order to solve the above technical problems, an embodiment of the present application provides a photodiode type laser power meter and a method for manufacturing the same, the photodiode type laser power meter including: a substrate, a bottom electrode array structure, an absorption layer and a top electrode array structure which are sequentially stacked on the substrate; the bottom electrode array structure comprises a plurality of bottom electrode array strips which are sequentially arranged along a first direction, and a first interval exists between every two adjacent bottom electrode array strips; the top electrode array structure comprises a plurality of top electrode array strips which are sequentially arranged along a second direction, and second intervals are reserved between adjacent top electrode array strips; the first direction is the width direction of the bottom electrode array strip, and the second direction is the width direction of the top electrode array strip; the second direction is perpendicular to the first direction.
The photodiode type laser power meter provided by the embodiment of the application improves the traditional array structure, fundamentally changes the lead mode of the top electrode, maximizes the pixel detection area and increases the detection precision; meanwhile, the array structure can expand the functions of measuring the size of a laser spot and positioning invisible infrared band laser due to the improvement of detection precision; the method greatly simplifies the lead mode of the pixel top electrode and greatly contributes to cost reduction.
Embodiments of the present application will be described in detail below with reference to the accompanying drawings. However, as will be appreciated by those of ordinary skill in the art, in the various embodiments of the present application, numerous technical details have been set forth in order to provide a better understanding of the present application. However, the technical solutions claimed in the present application can be implemented without these technical details and with various changes and modifications based on the following embodiments.
Referring to fig. 1, an embodiment of the present application provides a photodiode type laser power meter, including: a substrate 100, a bottom electrode array structure 101, an absorption layer 102, and a top electrode array structure 103 stacked in this order on the substrate 100; the bottom electrode array structure 101 includes a plurality of bottom electrode array bars 101a sequentially arranged along a first direction, and a first space exists between adjacent bottom electrode array bars 101 a; the top electrode array structure 103 includes a plurality of top electrode array bars 103a sequentially arranged along the second direction, and a second space exists between adjacent top electrode array bars 103 a; the first direction is the width direction of the bottom electrode array bar 101a, and the second direction is the width direction of the top electrode array bar 103 a; the second direction is perpendicular to the first direction.
As shown in fig. 3, the plurality of bottom electrode array bars 101a are sequentially arranged in an array structure along a first direction, and the first direction is a width direction of the bottom electrode array bars 101a, that is, the first direction is perpendicular to a length direction of the bottom electrode array bars 101a. Also, referring to fig. 1, the plurality of top electrode array bars 103a are sequentially arranged in an array structure along a second direction, the first direction is perpendicular to the second direction, that is, the width direction of the top electrode array bars 103a is perpendicular to the width direction of the bottom electrode array bars 101a, that is, the length direction of the top electrode array bars 103a is perpendicular to the length direction of the bottom electrode array bars 101a.
With continued reference to fig. 1, the bottom electrode array structure 101 includes a plurality of bottom electrode array strips 101a sequentially arranged along a first direction, and the plurality of bottom electrode array strips 101a are arranged in parallel on the substrate 100. Specifically, the bottom electrode array structure 101 is obtained by etching a plurality of trenches penetrating the bottom electrode film on the bottom electrode film. The first space between the adjacent bottom electrode array bars 101a is a first trench, and the first trench separates the adjacent bottom electrode array bars 101a, so that the bottom electrode array bars 101a are disconnected from each other. As shown in fig. 3, the length direction of the first trench is the second direction. The width of the first trench may be the same as or different from the width of the bottom electrode array stripe 101a.
The bottom electrode array strips 101a in the bottom electrode array structure 101 are mutually independent, the material of the bottom electrode array strips 101a can be molybdenum, the first grooves penetrate through the bottom electrode film, namely, the adjacent strip-shaped molybdenum electrodes are completely etched to form first grooves, no residual molybdenum exists, the series connection phenomenon between the strip-shaped molybdenum electrodes is avoided, and the structure of the etched strip-shaped molybdenum electrode (the bottom electrode array strip 101 a) is shown in fig. 2. Fig. 3 is a top view of a bottom electrode array strip 101a on a substrate 100. As can be seen from fig. 3, a plurality of bottom electrode array bars 101a arranged in parallel are arranged in an array structure along a first direction. As mentioned above, the top electrode array structure 103 includes a plurality of top electrode array strips 103a sequentially arranged along a second direction, and the second direction is perpendicular to the first direction, and it can be known that the arrangement direction of the top electrode array strips 103a is perpendicular to the arrangement direction of the bottom electrode array strips 101a, that is, the bottom electrode array strips 101a and the top electrode array strips 103a are arranged in a staggered manner.
With continued reference to fig. 1, an absorber layer 102 is tiled over the bottom electrode array structure 101, and the top electrode array structure 103 is located over the absorber layer 102; as shown in fig. 1, the top electrode array structure 103 includes a plurality of top electrode array strips 103a sequentially arranged along the second direction, and a second space exists between adjacent top electrode array strips 103 a; the second space between the adjacent top electrode array strips 103a is the second trench, and the second trench between the strips of the top electrode needs to be completely etched. The width of the second trench may be the same as or different from the width of the top electrode array stripe 103 a. The top electrode array strips 103a in the top electrode array structure 103 are mutually independent, so that the series connection phenomenon between the top electrode array strips 103a is avoided.
In some embodiments, the material of the substrate 100 may be a silicon wafer (high resistance silicon) with a silicon oxide layer, glass, or an insulating material. Of course, the material of the substrate 100 includes, but is not limited to, silicon, sapphire, or silicon carbide. The thickness of the substrate 100 is 50nm to 400nm; alternatively, the thickness of the substrate 100 is 100nm, 200nm or 300nm.
In some embodiments, the material of the bottom electrode array strip 101a is molybdenum, with a thickness of 300nm to 500nm.
In some embodiments, the width of bottom electrode array strip 101a is equal to the width of top electrode array strip 103 a.
In some embodiments, the width of the first pitch is equal to the width of the second pitch.
Of course, it is understood that, depending on the manufacturing process, the width of the bottom electrode array strip 101a may be different from the width of the top electrode array strip 103a, and the width of the first pitch may be different from the width of the second pitch.
The application provides a photodiode type laser power meter, and the main objective is that the function of laser power meter is extended, detection precision improves through independently innovative array structure, and the probe material that this application discloses covers the wave band wide, with low costs. The autonomous innovative array structure can measure the laser spot size while measuring the laser power, and has a positioning function for invisible infrared band laser. The application is applied to the realization of the multifunctional detection of the laser power meter by using the innovative array structure.
The array structure adopted by the application does not need to lead out the top electrode on the pixel unit, can realize the maximization of the light absorption area of the pixel unit, and solves the problems of complex process and the like caused by the lead wire of the top electrode of the pixel unit. Meanwhile, the array structure in the application can further reduce the pixel spacing and improve the light detection rate; the functions of measuring the laser spot size and positioning the invisible infrared band laser are expanded in the detection function.
In some embodiments, the thickness of the absorber layer 102 is 1200nm to 1800nm. For example, the thickness of the absorber layer 102 may be 1200nm, 1300nm, 1500nm, 1600nm, or 1800nm. Preferably, the thickness of the absorber layer 102 is 1500nm.
In some embodiments, the material of the absorber layer 102 is a copper-based thin film compound semiconductor material. Further, the material of the absorption layer 102 is Cu 2 Cd x Zn 1-x SnSe 4 。
Cu-based thin film compound semiconductor material Cu 2 Cd x Zn 1-x SnSe 4 Abbreviated as CCZTSe, the material is used as the material of the absorption layer 102, and the limitation of narrow detection wave band of the photodiode power meter on the market is broken through. The material has the wavelength absorption range of 350-1700 nm, covers visible light and short wave infrared wave bands, and meets the detection of visible laser and invisible infrared laser. The material used for the absorption layer 102 in the laser power meter of the present application has the following advantages compared with other photodiode type laser power meters: 1) The component crust content is rich; 2) The cut-off wavelength is an infrared band and covers a wide band; 3) The method can be applied to a flexible substrate, so that the device can be prepared or applied more flexibly;4) The manufacturing process is simple, mature and good in repeatability; 5) Short manufacturing period, low cost, and can realize rapid industrialized production, etc.
In some embodiments, top electrode array strip 103a includes buffer layer 1031, window layer (first window layer 1032 and second window layer 1022 in fig. 1 constitute window layers) stacked in sequence on absorber layer 102; both ends of the buffer layer 1031 in the width direction are flush with both ends of the window layer in the width direction. As shown in fig. 1, both ends of the buffer layer 1031 in the width direction are flush with both ends of the first window layer 1032 in the width direction, and both ends of the buffer layer 1031 in the width direction are also flush with both ends of the second window layer 1022 in the width direction. Because the second window layer, the first window layer and the buffer layer are etched simultaneously when the top electrode array strips 103a are prepared, second grooves penetrating through the second window layer, the first window layer and the buffer layer in sequence are obtained, and the adjacent top electrode array strips 103a are separated by the second grooves, so that the top electrode array strips 103a are mutually disconnected.
With continued reference to fig. 1, a photodiode type laser power meter provided in an embodiment of the present application includes: a substrate 100, and a bottom electrode array structure 101, an absorption layer 102, and a top electrode array structure 103 stacked in this order on the substrate 100. The substrate 100 may be a high-resistance silicon wafer, and the bottom electrode array structure 101 includes a plurality of bottom electrode array strips 101a sequentially arranged along a first direction. Typically, a molybdenum layer is deposited on a substrate 100 (high-resistance silicon wafer) by magnetron sputtering, and is used as a bottom electrode for deriving an electrical signal, and the molybdenum layer is etched into a parallel strip-shaped structure, so as to obtain a bottom electrode array strip 101a. An absorber layer 102 is then grown by molecular beam epitaxy on the bottom electrode array structure 101. Next, a top electrode array structure 103 is formed on the absorber layer 102. In forming the top electrode array structure 103, a buffer layer 1031 is first grown on the absorber layer 102 by a chemical water bath process. A window layer is then grown on the buffer layer 1031 by magnetron sputtering. The window layer may include two layers, such as a first window layer 1032 and a second window layer overlying the first window layer 1032. After forming the window layer, the parallel top electrode array stripes 103a are etched on the window layer and the buffer layer, and the length direction of the top electrode array stripes 103a is perpendicular to the length direction of the bottom electrode array stripes 101a. The second trenches of the adjacent top electrode array bars 103a sequentially penetrate through the window layer and the buffer layer, and the second trenches separate the adjacent top electrode array bars 103a, so that the top electrode array bars 103a are disconnected from each other.
In some embodiments, the material of the window layer is zinc oxide or aluminum doped zinc oxide.
In some embodiments, the window layers include a first window layer 1032 and a second window layer 1033 superimposed on the first window layer 1032; the material of the first window layer 1032 is zinc oxide (abbreviated as iZO), and the material of the second window layer 1033 is aluminum-doped zinc oxide (abbreviated as AZO).
Alternatively, the thickness of the buffer layer 1031 is 30nm to 80nm, for example, the thickness of the buffer layer 1031 may be 30nm, 40nm, 50nm, 60nm, 70nm, or 80nm. Preferably, the thickness of the buffer layer 1031 is 50nm.
Optionally, the thickness of the first window layer 1032 is 30nm to 80nm. For example, the first window layer 1032 has a thickness of 30nm, 40nm, 50nm, 70nm, or 80nm; preferably, the thickness of the first window layer 1032 is 50nm.
Optionally, the thickness of the second window layer 1033 is 400nm to 600nm. For example, the second window layer 1033 has a thickness of 400nm, 450nm, 500nm, 550nm, or 600nm; preferably, the thickness of the second window layer 1033 is 500nm.
In summary, the present application provides an innovative array structure of a photodiode type laser power meter, and the top electrode array structure 103 and the bottom electrode array structure 101 are utilized to make it unnecessary to draw electrodes on pixels, so that besides measuring laser power, laser spots can be measured and the position of invisible laser can be located. Compared with the traditional array structure, the novel array structure can work without leading out electrodes on the pixels, and solves the problems of performance limitation, harsh process, increased cost and the like caused by leading out electrodes on the pixels. The novel array structure is applied to a laser power meter, and can measure laser light spots besides laser power.
Cu disclosed in the present application 2 Cd x Zn 1-x SnSe 4 The absorption layer material grows by using molecular beam epitaxy vacuum equipment, has higher absorption coefficient, low cost and wide wave band, covers visible light and infrared wave bands at the same time, and breaks through the limitation of narrow detection wave band of the photodiode power meter on the market. The absorbing layer material is applied to the laser power meter, so that the laser power meter can measure infrared laser besides visible light laser, and the absorbing layer material can assist in positioning the infrared laser with the innovative array structure.
Referring to fig. 4, the embodiment of the application further provides a preparation method of the photodiode type laser power meter, which comprises the following steps:
step S1, providing a substrate.
And S2, forming a bottom electrode material layer on the substrate.
S3, etching the bottom electrode material layer to form a bottom electrode array structure; the bottom electrode array structure comprises a plurality of bottom electrode array strips which are sequentially arranged along a first direction, and a first interval exists between every two adjacent bottom electrode array strips.
And S4, forming an absorption layer on the bottom electrode array structure.
And S5, forming a top electrode material layer on the absorption layer.
S6, etching the top electrode material layer to form a top electrode array structure; the top electrode array structure comprises a plurality of top electrode array strips which are sequentially arranged along a second direction, and second intervals are reserved between adjacent top electrode array strips; the length direction of the bottom electrode array strip is perpendicular to the length direction of the top electrode array strip; the second direction is perpendicular to the first direction.
Referring to fig. 5, in some embodiments, forming a top electrode material layer on the absorber layer, etching the top electrode material layer to form a top electrode array structure, comprising:
and step S5', sequentially forming a buffer material layer, a first window material layer and a second window material layer which are arranged in a laminated manner on the absorption layer.
And step S6', etching the second window material layer, the first window material layer and the buffer material layer simultaneously to form a top electrode array structure.
After step S4 is performed, steps S5 'and S6' are sequentially performed. That is, after the absorption layer is formed on the bottom electrode array structure, the buffer material layer, the first window material layer, and the second window material layer are sequentially formed on the absorption layer. And then, etching the second window material layer, the first window material layer and the buffer material layer simultaneously to form a top electrode array structure.
The technical implementation means included in the application are mainly embodied in a photoetching process and a semiconductor film growth process. The process flow is shown in figure 6.
Firstly, providing a substrate, namely preparing a high-resistance silicon wafer, placing the high-resistance silicon wafer in a vacuum chamber, preserving heat at 120-200 ℃ for 30-40 min, moving the substrate (the high-resistance silicon wafer) into a film plating chamber, introducing argon, and sputtering the high-resistance silicon wafer for 18min at 3000w power to obtain a molybdenum layer electrode (a bottom electrode material layer) with the thickness of 300-500 nm.
Next, placing the sample (substrate and bottom electrode material layer) in a spin coating device, smearing photoresist on the molybdenum layer electrode, starting a spin coater, uniformly spin coating the photoresist, placing the spin-coated sample in a dark environment, exposing the array structure by an ultraviolet lamp, then placing the sample in a developing solution for development, then placing the sample in an etching solution, finally placing the sample in an acetone solution for removing the photoresist, and finally obtaining the bottom electrode array structure comprising a plurality of parallel bottom electrode array strips.
Then, growing an absorption layer on the bottom electrode array structure by a molecular beam epitaxy method, placing the sample in a vacuum cavity, and controlling the vacuum range to be 1 multiplied by 10 -5 Pa～1×10 -4 Between Pa, the temperature of Cu, zn, sn, se, cd is controlled, and an absorber layer is co-evaporated on the sample to deposit on the bottom electrode array structure (molybdenum layer electrode). And after the film is deposited, carrying out heat treatment annealing, wherein the thickness of the final absorption layer is about 1500nm.
Next, a buffer layer is deposited on the absorption layer by a chemical water bath method, a sample is firstly placed in the middle of a glass vessel, the prepared mixed solution of cadmium sulfate and ammonia water and thiourea solution are poured into the glass vessel, the reaction temperature and time are controlled, and the buffer layer with the thickness of about 50nm is deposited on the absorption layer. After the buffer layer is deposited, washing buffer with deionized water, drying with nitrogen, placing into a constant temperature oven at 180 ℃ for 2-3 min, and naturally cooling and annealing in air.
Next, a window layer is deposited on the buffer layer by a magnetron sputtering method, the window layer including a first window layer and a second window layer over the buffer layer. Placing the obtained sample in vacuum cavity, and controlling vacuum range to 1×10 -5 Pa～1×10 -4 Introducing argon and oxygen mixed gas between Pa, sputtering an intrinsic zinc oxide target on a sample for 3-4 min at 120W power, and then sputtering for 28-34 min at 500W power; the atmosphere of the vacuum cavity is regulated to be argon and hydrogen mixed gas, the temperature of a sample is controlled to be 170-185 ℃, and an aluminum-doped zinc oxide target is sputtered for 7-10 min at 750W power to obtain a iZO layer (a first window layer) with the thickness of 50nm and an AZO layer (a second window layer) with the thickness of 500nm.
Before preparing the top electrode, placing the sample in a spin coating device, smearing photoresist on the second window layer, starting a spin coater, uniformly spin-coating the photoresist, placing the spin-coated sample in a dark environment, exposing the array structure by an ultraviolet lamp, then placing the sample in a developing solution for development, then placing the sample in an etching solution, and finally placing the sample in an acetone solution to remove the photoresist. Finally, a top electrode array structure comprising a plurality of parallel top electrode array strips is obtained, and the array direction of the top electrode array strips is perpendicular to the array direction of the bottom electrode array strips (strip-shaped molybdenum layer electrodes).
Through experiments, the photoetching process of the bottom electrode and the top electrode meets the design, the bottom (top) electrode array strips are mutually disconnected, detection signals among pixels are mutually independent, and the designed detection function is met. In addition, the present application uses Cu 2 Cd x Zn 1-x SnSe 4 The photodiode type laser power meter manufactured by the material has better response to optical signals, the quantum efficiency peak value can reach 90%, the response wavelength range is stabilized between 350nm and 1700nm, and the quantum efficiency graph is shown in figure 7.
In addition, the absorption layer material is subjected to scanning electron microscope characterization, so that the absorption layer material is uniform in crystallization, good in compactness and flat in crystal surface, and a scanning electron microscope image is shown in an attached figure 8.
By the technical scheme, the embodiment of the application provides a photodiode type laser power meter and a preparation method thereof, and the photodiode type laser power meter comprises: a substrate 100, a bottom electrode array structure 101, an absorption layer 102, and a top electrode array structure 103 stacked in this order on the substrate 100; the bottom electrode array structure 101 includes a plurality of bottom electrode array bars 101a sequentially arranged along a first direction, and a first space exists between adjacent bottom electrode array bars 101 a; the top electrode array structure 103 includes a plurality of top electrode array bars 103a sequentially arranged along the second direction, and a second space exists between adjacent top electrode array bars 103 a; the first direction is the width direction of the bottom electrode array bar 101a, and the second direction is the width direction of the top electrode array bar 103 a; the second direction is perpendicular to the first direction.
According to the embodiment of the application, the bottom electrode array structure and the top electrode array structure are formed on the substrate, and the bottom electrode array strips and the top electrode array strips are vertically arranged, so that the bottom electrode array strips and the top electrode array strips are mutually disconnected, detection signals between pixels are mutually independent, and the designed detection function is met. The photodiode type laser power meter provided by the application does not need to lead out the top electrode on the pixel unit, can realize the maximization of the light absorption area of the pixel unit, and solves the problems of complex process and the like caused by the lead wire of the top electrode of the pixel unit. Meanwhile, the bottom electrode array structure and the top electrode array structure in the application can further reduce the pixel spacing and improve the light detection rate; the functions of measuring the laser spot size and positioning the invisible infrared band laser are expanded in the detection function.
It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples of implementing the present application and that various changes in form and details may be made therein without departing from the spirit and scope of the present application. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention shall be defined by the appended claims.
Claims (10)
1. A photodiode type laser power meter, comprising:
a substrate, a bottom electrode array structure, an absorption layer and a top electrode array structure which are sequentially stacked on the substrate;
the bottom electrode array structure comprises a plurality of bottom electrode array strips which are sequentially arranged along a first direction, and a first interval exists between every two adjacent bottom electrode array strips;
the top electrode array structure comprises a plurality of top electrode array strips which are sequentially arranged along a second direction, and second intervals are reserved between adjacent top electrode array strips;
the first direction is the width direction of the bottom electrode array strip, and the second direction is the width direction of the top electrode array strip; the second direction is perpendicular to the first direction.
2. The photodiode type laser power meter according to claim 1, wherein the material of the absorption layer is a copper-based thin film compound semiconductor material.
3. The photodiode type laser power meter according to claim 2, wherein the material of the absorption layer is Cu 2 Cd x Zn 1-x SnSe 4 。
4. The photodiode type laser power meter of claim 1, wherein the width of the bottom electrode array strip is equal to the width of the top electrode array strip.
5. The photodiode type laser power meter of claim 4, wherein the width of the first pitch is equal to the width of the second pitch.
6. The photodiode type laser power meter according to claim 1, wherein the top electrode array strip comprises a buffer layer and a window layer sequentially stacked on the absorption layer;
the two ends of the buffer layer along the width direction are flush with the two ends of the window layer along the width direction.
7. The photodiode type laser power meter of claim 6, wherein the material of the window layer is zinc oxide or aluminum doped zinc oxide.
8. The photodiode type laser power meter as claimed in claim 6, wherein the window layer includes a first window layer and a second window layer stacked on the first window layer; the first window layer is made of zinc oxide, and the second window layer is made of aluminum doped zinc oxide.
9. A method for manufacturing a photodiode type laser power meter, comprising the steps of:
providing a substrate;
forming a bottom electrode material layer on the substrate;
etching the bottom electrode material layer to form a bottom electrode array structure; the bottom electrode array structure comprises a plurality of bottom electrode array strips which are sequentially arranged along a first direction, and a first interval exists between every two adjacent bottom electrode array strips;
forming an absorption layer on the bottom electrode array structure;
forming a top electrode material layer on the absorber layer;
etching the top electrode material layer to form a top electrode array structure; the top electrode array structure comprises a plurality of top electrode array strips which are sequentially arranged along a second direction, and second intervals are reserved between adjacent top electrode array strips; the first direction is the width direction of the bottom electrode array strip, and the second direction is the width direction of the top electrode array strip; the second direction is perpendicular to the first direction.
10. The method of claim 9, wherein forming a top electrode material layer on the absorber layer, etching the top electrode material layer, forming a top electrode array structure, comprises:
sequentially forming a buffer material layer, a first window material layer and a second window material layer which are arranged in a laminated manner on the absorption layer;
and etching the second window material layer, the first window material layer and the buffer material layer simultaneously to form a top electrode array structure.
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