CN116417365B - Wafer testing method - Google Patents
Wafer testing method Download PDFInfo
- Publication number
- CN116417365B CN116417365B CN202310686132.3A CN202310686132A CN116417365B CN 116417365 B CN116417365 B CN 116417365B CN 202310686132 A CN202310686132 A CN 202310686132A CN 116417365 B CN116417365 B CN 116417365B
- Authority
- CN
- China
- Prior art keywords
- wafer
- thickness
- acupressure
- test
- electromagnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 103
- 239000000523 sample Substances 0.000 claims abstract description 28
- 235000012431 wafers Nutrition 0.000 claims description 255
- 238000000034 method Methods 0.000 claims description 22
- 238000012827 research and development Methods 0.000 claims description 13
- 238000010998 test method Methods 0.000 claims description 5
- 230000002159 abnormal effect Effects 0.000 abstract description 9
- 238000011160 research Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention provides a wafer testing method, which comprises the steps of providing a wafer, placing the wafer on a bearing table, wherein the wafer is provided with matching information; providing an electromagnetic wave emitter and an electromagnetic sensor, wherein the electromagnetic wave emitter and the electromagnetic sensor are both positioned above a bearing table, the electromagnetic wave emitter emits electromagnetic waves to be projected on the surface of a wafer and the surface of the bearing table, the electromagnetic sensor receives the electromagnetic waves reflected by the surface of the wafer and the surface of the bearing table to form a thickness signal of the wafer, and the thickness value of the wafer is obtained by utilizing the thickness signal of the wafer; obtaining the acupressure quantity of the wafer according to the thickness value of the wafer and the matching information, and realizing automatic allocation of acupressure quantity according to the thickness value of the wafer; and then the probe machine acquires the needle pressure of the wafer, and tests the wafer according to the needle pressure of the wafer, and the needle pressure of the wafer is automatically distributed, so that the possibility of abnormal testing of the wafer can be effectively reduced, and the testing efficiency is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor testing, in particular to a wafer testing method.
Background
Wafer testing is an indicator of factory shipment decisions, which is tested by direct contact of probes in a prober with the wafer, so it is particularly important to monitor the connection between the probes and the wafer because whether the connection between the probes and the wafer is suitable directly affects the electrical measurement results. The needle pressure (the needle-down amount of the probe) directly reflects whether the connection between the probe and the wafer is proper or not, the abnormal needle pressure of the probe machine can directly lead to abnormal test data, the test result is checked after the whole batch of wafers are tested, the probe machine temporarily stops testing, the needle pressure of the probe machine is checked through multiple-aspect analysis of engineers, finally, the problem of the needle pressure of the probe machine is determined to lead to abnormal test data, and the waste of productivity and manpower is caused due to time and labor consumption.
The amount of acupressure may be different for different wafers, and the amount of acupressure may be different for the same wafer in the development stage and the mass production stage, and the amount of acupressure may be different for the same wafer in performing different tests. Currently, before testing a wafer, an engineer needs to check whether the acupressure amount of the corresponding wafer is proper, if not, the engineer needs to manually adjust the acupressure amount, which is time-consuming; if the acupressure amounts of the same wafer in the research and development stage and the mass production stage are different, or if the acupressure amounts of the same wafer in different tests are different, engineers are likely to forget to update the acupressure amounts, so that the test data are abnormal.
Disclosure of Invention
The invention aims to provide a wafer testing method, which can automatically distribute needle pressure according to the thickness value of a wafer, reduce the possibility of abnormal wafer testing and improve the testing efficiency.
In order to achieve the above object, the present invention provides a wafer testing method, which uses a prober to test a wafer, comprising:
providing a wafer, and placing the wafer on a bearing table of the probe machine, wherein the wafer is provided with matching information;
providing an electromagnetic wave emitter and an electromagnetic sensor, wherein the electromagnetic wave emitter and the electromagnetic sensor are both positioned above the bearing table, the electromagnetic wave emitter emits electromagnetic waves to be projected on the surface of the wafer and the surface of the bearing table, the electromagnetic sensor receives the electromagnetic waves reflected by the surface of the wafer and the surface of the bearing table to form a thickness signal of the wafer, and the thickness value of the wafer is obtained by utilizing the thickness signal of the wafer;
obtaining the acupressure quantity of the wafer according to the thickness value of the wafer and the matching information; the method comprises the steps of,
and the probe machine acquires the acupressure quantity of the wafer and tests the wafer according to the acupressure quantity of the wafer.
Optionally, the matching information is stored in a control system for controlling the operation of the probe machine.
Optionally, the matching information includes a wafer number, a wafer device type, and a process node.
Optionally, the step of obtaining the acupressure amount of the wafer includes:
searching a data source corresponding to the wafer in the control system according to the matching information; the method comprises the steps of,
and obtaining the acupressure quantity of the wafer from a data source corresponding to the wafer in the control system according to the thickness value of the wafer.
Optionally, the step of searching the data source corresponding to the wafer in the control system includes:
identifying the wafer as a special product, a research and development product or a mass production product according to the wafer number, and obtaining a special product database, a research and development product database or a mass production product database in the control system according to the wafer number after identification; the method comprises the steps of,
and searching in the special product database, the research and development product database or the mass production product database according to the type of the wafer device and the process node so as to obtain a data source corresponding to the matching information as a data source corresponding to the wafer.
Optionally, the steps of forming the thickness signal of the wafer and obtaining the thickness value of the wafer include:
setting a plurality of first test points on the surface of the wafer, and setting second test points on the surface of the bearing table;
the electromagnetic wave transmitter transmits electromagnetic waves to be projected on each first test point and each second test point in sequence, and the electromagnetic sensor receives the electromagnetic waves reflected by each first test point and each second test point to form thickness signals of a plurality of wafers; the method comprises the steps of,
and obtaining the thickness value of the wafer by using the thickness signals of the wafers.
Optionally, the thickness signals of the wafers are used to obtain test thickness values of the wafers, and the average value of the test thickness values of the wafers is taken as the thickness value of the wafers.
Optionally, the diameter of the wafer is smaller than the diameter of the carrier to leave a circumferential edge of the carrier.
Optionally, the plurality of first test points are distributed on the surface of the wafer in an array, and the second test points are arranged on the surface of the circumferential edge of the bearing table.
Optionally, when the electromagnetic wave emitter emits electromagnetic waves to be projected on each of the first test point and the second test point in sequence, the electromagnetic wave emitter rotates around the bearing table.
In the wafer testing method provided by the invention, a wafer is provided and placed on a bearing table, and the wafer has matching information; providing an electromagnetic wave emitter and an electromagnetic sensor, wherein the electromagnetic wave emitter and the electromagnetic sensor are both positioned above a bearing table, the electromagnetic wave emitter emits electromagnetic waves to be projected on the surface of a wafer and the surface of the bearing table, the electromagnetic sensor receives the electromagnetic waves reflected by the surface of the wafer and the surface of the bearing table to form a thickness signal of the wafer, and the thickness value of the wafer is obtained by utilizing the thickness signal of the wafer; obtaining the acupressure quantity of the wafer according to the thickness value of the wafer and the matching information, and realizing automatic allocation of acupressure quantity according to the thickness value of the wafer; and then the probe machine acquires the needle pressure of the wafer, and tests the wafer according to the needle pressure of the wafer, and the needle pressure of the wafer is automatically distributed, so that the possibility of abnormal testing of the wafer can be effectively reduced, and the testing efficiency is improved.
Drawings
Fig. 1 is a flowchart of a wafer testing method according to an embodiment of the invention.
Fig. 2 is a schematic diagram of a part of a probe apparatus in a wafer testing method according to an embodiment of the invention.
Fig. 3 is a flowchart of a method for obtaining a thickness value of a wafer in a wafer test method according to an embodiment of the invention.
Fig. 4 is a flowchart of a method for obtaining a acupressure of a wafer in a wafer test method according to an embodiment of the present invention.
Wherein, the reference numerals are as follows:
10-wafer; 20-bearing table; 30-an electromagnetic wave emitter; 40-electromagnetic sensor.
Detailed Description
Specific embodiments of the present invention will be described in more detail below with reference to the drawings. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention.
Fig. 1 is a flowchart of a wafer testing method according to the present embodiment. Referring to fig. 1, the present invention provides a wafer testing method, which uses a prober to test a wafer, including:
step S1: providing a wafer, placing the wafer on a bearing table of a probe machine, wherein the wafer is provided with matching information;
step S2: providing an electromagnetic wave emitter and an electromagnetic sensor, wherein the electromagnetic wave emitter and the electromagnetic sensor are both positioned above a bearing table, the electromagnetic wave emitter emits electromagnetic waves to be projected on the surface of a wafer and the surface of the bearing table, the electromagnetic sensor receives the electromagnetic waves reflected by the surface of the wafer and the surface of the bearing table to form a thickness signal of the wafer, and the thickness value of the wafer is obtained by utilizing the thickness signal of the wafer;
step S3: obtaining the acupressure quantity of the wafer according to the thickness value and the matching information of the wafer;
step S4: the probe machine obtains the acupressure quantity of the wafer and tests the wafer according to the acupressure quantity of the wafer.
Fig. 2 is a schematic diagram of a part of a probe in the wafer testing method according to the present embodiment, fig. 3 is a flowchart of obtaining a thickness value of a wafer in the wafer testing method according to the present embodiment, and fig. 4 is a flowchart of obtaining a acupressure value of the wafer in the wafer testing method according to the present embodiment. The wafer testing method provided in this embodiment is described in detail below with reference to fig. 2 to 4.
Referring to fig. 2, step S1 is performed: the prober has a carrier 20, a wafer 10 is provided, the wafer 10 is placed on the carrier 20, the wafer 10 is a device wafer, the wafer 10 includes a substrate and a device structure, and the wafer 10 has matching information. In this embodiment, the diameter of the wafer 10 is smaller than the diameter of the susceptor 20 to reserve the circumferential edge of the susceptor 20. In this embodiment, the matching information is stored in a control system (not shown in the figure) for controlling the operation of the probe machine, and the matching information includes a wafer number, a wafer device type and a process node, wherein the wafer can be identified as a special product, a research product or a mass production product according to the wafer number, the wafer device type includes a logic driving chip (DDIC), an image sensor (CIS), a Flash memory (Flash) or a power management chip (PMIC), and the process node includes 28nm, 38nm, 55nm, 90nm, 110nm, 150nm, which is not limited to the ranges of the wafer number, the wafer device type and the process node. Before being placed on the carrying platform 20, the wafers are placed in a front opening type standard box, the front opening type standard box is used for placing wafers of the same batch, the front opening type standard box is provided with a bar code or a two-dimensional code, a driving machine reads the bar code or the two-dimensional code to acquire all production information of the batch of wafers in the front opening type standard box, and after all production information is read, the wafers are allowed to be conveyed and placed on the carrying platform 20; wherein all production information includes matching information, and of course includes other information besides matching information, such as process time, process flow, etc., but in this embodiment it is preferred to match according to wafer number, wafer device type, and process node.
With continued reference to fig. 2, step S2 is performed: providing an electromagnetic wave emitter 30 and an electromagnetic sensor 40, wherein the electromagnetic wave emitter 30 and the electromagnetic sensor 40 are positioned above the bearing table 20 and can be installed on a probe machine, and the electromagnetic wave emitter 30 and the electromagnetic sensor 40 are electrically connected with a control system. The electromagnetic wave emitter 30 emits electromagnetic waves projected on the surface of the wafer 10 and the surface of the carrier 20, the electromagnetic sensor 40 receives electromagnetic waves reflected by the surface of the wafer 10 and the surface of the carrier 20 to form a thickness signal of the wafer 10, and the thickness value of the wafer 10 is obtained using the thickness signal of the wafer 10. In fig. 2, the electromagnetic wave emitter 30 emits electromagnetic waves projected onto the surface of the wafer 10, the electromagnetic sensor 40 receives electromagnetic waves reflected from the surface of the wafer 10 (shown by a broken line in fig. 2), the electromagnetic wave emitter 30 emits electromagnetic waves projected onto the circumferential edge of the stage 20, and the electromagnetic sensor 40 receives electromagnetic waves reflected from the surface of the stage 20 (shown by a solid line in fig. 2).
Specifically, referring to fig. 3, step S21 is performed: a plurality of first test points are set on the surface of the wafer 10, and second test points are set on the surface of the carrier 20, and since the surface of the carrier 20 is flat and the surface of the wafer 10 is uneven due to the patterns, a plurality of first test points are set, only one second test point can be set, and the positions of the first test points and the second test points are stored in the control system.
Step S22 is performed: when the wafer 10 is placed on the carrier 20, the control system issues a command to control the electromagnetic wave emitter 30 to emit electromagnetic waves to sequentially project on each of the first test point and the second test point, and the electromagnetic sensor 40 receives the electromagnetic waves reflected by each of the first test point and the second test point to form thickness signals of a plurality of wafers 10.
Step S23 is performed: the thickness signal of the wafer 10 is transmitted to a control system, the control system is provided with a thickness calculating unit, according to electromagnetic waves reflected by the first test point and the second test point, the time difference of the electromagnetic waves reflected by the first test point and the second test point can be obtained, the time difference represents the thickness value of the wafer, and a conversion formula related to the time difference and the thickness value of the wafer is stored in the thickness calculating unit, so that the thickness value of the wafer 10 is obtained according to the thickness signal of the wafer 10 through the control system. In this embodiment, thickness signals of a plurality of wafers 10 are transmitted to a control system, the control system calculates test thickness values of a plurality of wafers 10 according to the thickness signals of a plurality of wafers 10, and obtains a test thickness value of a wafer 10 according to electromagnetic waves reflected by a first test point and a second test point; and average the test thickness values of the wafers 10 to be used as the thickness values of the wafers 10, obtaining the test thickness values of the wafers 10 by setting a plurality of first test points, and then taking the average value to be used as the thickness values of the wafers 10, so that the obtained thickness values of the wafers 10 are more accurate, and the follow-up obtaining of more accurate acupressure values is facilitated. In this embodiment, the first test points are distributed on the surface of the wafer 10 in an array, and the second test points are disposed on the surface of the circumferential edge of the carrier 20; when the electromagnetic wave emitter 30 emits electromagnetic waves to be projected onto each of the first test point and the second test point in turn, the electromagnetic wave emitter 30 can rotate around the bearing table 20, so that the electromagnetic wave emitter 30 emits electromagnetic waves to be projected onto each test point (the first test point and the second test point).
Step S3 is executed: the step of obtaining the acupressure of the wafer according to the thickness value of the wafer and the matching information comprises the steps of searching a data source corresponding to the wafer in the control system according to the matching information, obtaining the acupressure of the wafer from the data source corresponding to the wafer in the control system according to the thickness value of the wafer, and obtaining the acupressure of the wafer according to the thickness value of the wafer and the matching information and executing in the control system.
Referring to fig. 4, the wafer is identified and judged to be a special product, a research product or a mass production product according to the wafer number, and a special product database, a research product database or a mass production product database is obtained according to the wafer number after the identification. Specifically, for example, whether the wafer is a special product is firstly identified according to the wafer number, if yes, a special product database is obtained, if not, whether the wafer is a research and development product is continuously identified according to the wafer number, if yes, a research and development product database is obtained, if not, whether the wafer is a mass production product is continuously identified according to the wafer number, if yes, a mass production product database is obtained, if not, a measurement instruction is sent, and if not, the wafer is a special product, a research and development product or a mass production product, and when a judgment error or a very few specific situations are met, a measurement instruction is sent. In fig. 4, the determination is performed according to the order of the specific product, the developed product, and the mass-produced product, and the determination order of the three may not be limited in practice.
With continued reference to fig. 4, after the special product database, the research and development product database or the mass production product database is obtained, the data source corresponding to the matching information is searched in the special product database, the research and development product database or the mass production product database according to the type of the wafer device and the process node, for example, the data source corresponding to the matching information is searched in the special product database, the data source corresponding to the matching information is searched in the research and development product database or the data source corresponding to the matching information is searched in the mass production product database, and the data source corresponding to the matching information is used as the data source corresponding to the wafer placed on the bearing table.
With continued reference to fig. 4, the acupressure of the wafer is obtained from the data source corresponding to the wafer in the control system according to the thickness value of the wafer, and the acupressure of the wafer is output and sent to the prober.
In this embodiment, the acupressure amounts of the wafers corresponding to the different thickness values of the wafers are stored in the data sources corresponding to the wafers, and the acupressure amounts of the wafers corresponding to the different thickness values of the wafers are obtained by a great amount of test experience of engineers. Table 1 is a reference correspondence table of the matching information, the thickness value and the acupressure amount of the wafer in the wafer test method provided in this embodiment. Referring to table 1, table 1 only illustrates the matching relationship between the thickness value and the acupressure of the wafer, and actually, the matching relationship between the thickness value and the acupressure of the wafer is different for different special products, research products and mass production products, and the matching relationship between the thickness value and the acupressure of the wafer is stored in the control system. In table 1, the wafer can be known to be a special product, a research product or a mass production product according to the wafer number, and in table 1, the matching relationship between the thickness value and the acupressure value of the wafer for the mass production product is illustrated by way of example, and the corresponding acupressure value is obtained according to the thickness value of the wafer.
Table 1, reference correspondence table of matching information, thickness value of wafer and acupressure amount
Step S4 is executed: the probe machine obtains the needle pressure of the wafer issued by the control system, and the probe machine controls the needle under the probe to contact with the surface of the wafer according to the needle pressure of the wafer so as to test the wafer, and the specific test content is not limited. According to the embodiment, the needle pressure of the wafer is automatically distributed according to the thickness value of the wafer, so that the possibility of abnormal wafer test can be effectively reduced, and the test efficiency is improved.
In summary, in the wafer testing method provided by the invention, a wafer is provided and placed on a bearing table, and the wafer has matching information; providing an electromagnetic wave emitter and an electromagnetic sensor, wherein the electromagnetic wave emitter and the electromagnetic sensor are both positioned above a bearing table, the electromagnetic wave emitter emits electromagnetic waves to be projected on the surface of a wafer and the surface of the bearing table, the electromagnetic sensor receives the electromagnetic waves reflected by the surface of the wafer and the surface of the bearing table to form a thickness signal of the wafer, and the thickness value of the wafer is obtained by utilizing the thickness signal of the wafer; obtaining the acupressure quantity of the wafer according to the thickness value of the wafer and the matching information, and realizing automatic allocation of acupressure quantity according to the thickness value of the wafer; and then the probe machine acquires the needle pressure of the wafer, and tests the wafer according to the needle pressure of the wafer, and the needle pressure of the wafer is automatically distributed, so that the possibility of abnormal testing of the wafer can be effectively reduced, and the testing efficiency is improved.
The foregoing is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any person skilled in the art will make any equivalent substitution or modification to the technical solution and technical content disclosed in the invention without departing from the scope of the technical solution of the invention, and the technical solution of the invention is not departing from the scope of the invention.
Claims (7)
1. The wafer testing method is characterized by testing a wafer by using a probe machine and comprises the following steps:
providing a wafer, and placing the wafer on a bearing table of the probe machine, wherein the wafer is provided with matching information, and the matching information comprises a wafer number, a wafer device type and a process node;
providing an electromagnetic wave emitter and an electromagnetic sensor, wherein the electromagnetic wave emitter and the electromagnetic sensor are both positioned above the bearing table, the electromagnetic wave emitter emits electromagnetic waves to be projected on the surface of the wafer and the surface of the bearing table, the electromagnetic sensor receives the electromagnetic waves reflected by the surface of the wafer and the surface of the bearing table to form a thickness signal of the wafer, and the thickness value of the wafer is obtained by utilizing the thickness signal of the wafer;
obtaining the acupressure quantity of the wafer according to the thickness value of the wafer and the matching information; the method comprises the steps of,
the probe machine obtains the acupressure quantity of the wafer and tests the wafer according to the acupressure quantity of the wafer;
the step of obtaining the acupressure quantity of the wafer comprises the following steps:
identifying the wafer as a special product, a research and development product or a mass production product according to the wafer number, and acquiring a special product database, a research and development product database or a mass production product database in a control system for the operation of the probe machine according to the wafer number after the identification;
searching in the special product database, the research and development product database or the mass production product database according to the type of the wafer device and the process node to obtain a data source corresponding to the matching information as a data source corresponding to the wafer; the method comprises the steps of,
and obtaining the acupressure quantity of the wafer from a data source corresponding to the wafer in the control system according to the thickness value of the wafer, wherein the acupressure quantity of the wafer corresponding to the thickness value of the wafer is stored in the data source corresponding to the wafer.
2. The wafer test method of claim 1, wherein the matching information is stored in a control system that controls operation of the prober.
3. The method of claim 1, wherein the steps of forming a thickness signal for the wafer and obtaining a thickness value for the wafer comprise:
setting a plurality of first test points on the surface of the wafer, and setting second test points on the surface of the bearing table;
the electromagnetic wave transmitter transmits electromagnetic waves to be projected on each first test point and each second test point in sequence, and the electromagnetic sensor receives the electromagnetic waves reflected by each first test point and each second test point to form thickness signals of a plurality of wafers; the method comprises the steps of,
and obtaining the thickness value of the wafer by using the thickness signals of the wafers.
4. The wafer test method of claim 3, wherein the thickness signal of the plurality of wafers is used to obtain a plurality of test thickness values of the plurality of wafers, and the test thickness values of the plurality of wafers are averaged to obtain the thickness value of the wafer.
5. The wafer testing method of claim 3, wherein the diameter of the wafer is smaller than the diameter of the carrier to reserve a circumferential edge of the carrier.
6. The method of claim 5, wherein the plurality of first test points are arranged in an array on the surface of the wafer, and the plurality of second test points are arranged on the surface of the circumferential edge of the carrier.
7. The wafer testing method of claim 3, wherein the electromagnetic wave emitter rotates about the carrier when the electromagnetic wave emitter emits electromagnetic waves that are projected onto each of the first test point and the second test point in turn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310686132.3A CN116417365B (en) | 2023-06-12 | 2023-06-12 | Wafer testing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310686132.3A CN116417365B (en) | 2023-06-12 | 2023-06-12 | Wafer testing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116417365A CN116417365A (en) | 2023-07-11 |
| CN116417365B true CN116417365B (en) | 2023-09-08 |
Family
ID=87049623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310686132.3A Active CN116417365B (en) | 2023-06-12 | 2023-06-12 | Wafer testing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116417365B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117706316B (en) * | 2024-02-06 | 2024-04-09 | 合肥晶合集成电路股份有限公司 | Wafer testing method, device, equipment and medium of probe station |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05315412A (en) * | 1992-05-12 | 1993-11-26 | Nec Kyushu Ltd | Judging method for contact point |
| JPH06140479A (en) * | 1992-10-23 | 1994-05-20 | Mitsubishi Denki Eng Kk | Device for testing semiconductor integrated circuit |
| JP2006319125A (en) * | 2005-05-12 | 2006-11-24 | Fuji Photo Film Co Ltd | Method and apparatus for wafer inspection |
| CN105452801A (en) * | 2013-07-26 | 2016-03-30 | 马波斯S.P.A.公司 | Method and apparatus for optically checking by interferometry the thickness of an object being machined |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002280425A (en) * | 2001-03-16 | 2002-09-27 | Hitachi Ltd | Method of manufacturing semiconductor integrated circuit and testing method thereof |
-
2023
- 2023-06-12 CN CN202310686132.3A patent/CN116417365B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05315412A (en) * | 1992-05-12 | 1993-11-26 | Nec Kyushu Ltd | Judging method for contact point |
| JPH06140479A (en) * | 1992-10-23 | 1994-05-20 | Mitsubishi Denki Eng Kk | Device for testing semiconductor integrated circuit |
| JP2006319125A (en) * | 2005-05-12 | 2006-11-24 | Fuji Photo Film Co Ltd | Method and apparatus for wafer inspection |
| CN105452801A (en) * | 2013-07-26 | 2016-03-30 | 马波斯S.P.A.公司 | Method and apparatus for optically checking by interferometry the thickness of an object being machined |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116417365A (en) | 2023-07-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN116417365B (en) | Wafer testing method | |
| TWI403736B (en) | Method and apparatus for controlling testing of devices,test system and test facility | |
| US7657339B1 (en) | Product-related feedback for process control | |
| US11387122B2 (en) | Method and apparatus for measuring process kit centering | |
| US6465263B1 (en) | Method and apparatus for implementing corrected species by monitoring specific state parameters | |
| US6802045B1 (en) | Method and apparatus for incorporating control simulation environment | |
| US7016750B2 (en) | Method, device, computer-readable storage medium and computer program element for monitoring of a manufacturing process | |
| US11908724B2 (en) | Method and apparatus for measuring placement of a substrate on a heater pedestal | |
| US6647309B1 (en) | Method and apparatus for automated generation of test semiconductor wafers | |
| US6560506B2 (en) | Method and apparatus for control for semiconductor processing for reducing effects of environmental effects | |
| CN107076782A (en) | The assembling device tested for probe card | |
| CN114551265A (en) | Testing method and device for miniLED wafer | |
| US20070210824A1 (en) | Method of inspecting quiescent power supply current in semiconductor integrated circuit and device for executing the method | |
| CN101859695A (en) | System and method for implementing multi-resolution advanced process control | |
| CN108170109A (en) | A kind of optical transmitting set debugging apparatus and its adjustment method | |
| JP2006319125A (en) | Method and apparatus for wafer inspection | |
| CN109390246A (en) | A kind of WAT test method and system | |
| CN101556899A (en) | Marking method and system of wafer manufacturing process | |
| CN113325685A (en) | Automatic adjusting device for multi-meter parallel daily timing of intelligent electric energy meter | |
| CN112363045A (en) | Chip scanning test method and device, processor chip and server | |
| CN110568395A (en) | electric energy meter multi-signal detection, read-write device and implementation method | |
| CN109491845B (en) | Test method and system for storage product controller | |
| TW201417200A (en) | Method for integrating testing resources and IC testing | |
| TWI437246B (en) | Method for testing main board | |
| CN114814540B (en) | SLT test method and system of SIP chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |