CN116374942B - Microelectromechanical component integrating inertial and pressure sensors - Google Patents
Microelectromechanical component integrating inertial and pressure sensors Download PDFInfo
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- CN116374942B CN116374942B CN202310667562.0A CN202310667562A CN116374942B CN 116374942 B CN116374942 B CN 116374942B CN 202310667562 A CN202310667562 A CN 202310667562A CN 116374942 B CN116374942 B CN 116374942B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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Abstract
The invention discloses a micro-electromechanical component integrating inertia and a pressure sensor, which comprises: the device comprises a substrate, a device structure and a capping structure, wherein the device structure comprises a movable mass block, a first anchor point for fixing the movable mass block and a fixed mass block, a first hollowed-out groove is formed in the movable mass block, the fixed mass block is located in the first hollowed-out groove, a first electrode is formed by the fixed mass block, a movable electrode area is arranged on the capping structure, a second electrode is formed by the movable electrode area, and projections of the first electrode and the second electrode overlap in the thickness direction of the substrate to form a pressure detection capacitor. The technical scheme provided by the invention realizes that the pressure sensor is integrated on the basis of not changing the volume of the inertial sensor, and can simultaneously perform inertial sensing and pressure detection.
Description
Technical Field
The invention relates to the technical field of micro-electromechanical technology, in particular to a micro-electromechanical component of an inertia and pressure sensor.
Background
With the development of electronic component manufacturing, micro-Electro-Mechanical System (MEMS) technology is a high-new technology developed at high speed in recent years, and has many applications in the fields of inertia, pressure sensors, and the like. The device structure of the mems generally senses the magnitude of the pressure, acceleration, angular velocity, etc. applied to the device through capacitance, resistance, etc., and the change of capacitance and resistance is mainly generated by a spring equivalent system inside the device structure, so the device structure of the mems has sensitive sensing elements (movable elements), and protection of the sensing elements (movable elements) inside the device structure is generally formed by sealing the device structure and a top cover structure together.
With the development of science and technology, the demands for integration and miniaturization of MEMS sensors are becoming stronger, and how to integrate pressure sensors and inertial sensors into a single chip becomes a problem to be solved.
Disclosure of Invention
The invention aims to at least solve one of the technical problems existing in the prior art and provides a micro-electromechanical component with integrated inertia and pressure sensor.
The invention adopts the following technical scheme:
according to an aspect of the present invention, there is provided a microelectromechanical component integrated with an inertial and pressure sensor, comprising:
the substrate is provided with a plurality of holes,
a device structure located on one side of the substrate, the device structure comprising a movable mass, a first anchor for fixing the movable mass, and a fixed mass, the movable mass being eccentrically disposed with respect to a first direction, the fixed mass being located on a relatively small side of the movable mass, the movable mass being provided with a first hollowed out groove, the fixed mass being located within the first hollowed out groove, the fixed mass constituting a first electrode, the movable mass being subject to a corresponding rotational displacement in a sense axis direction in response to an acceleration in the sense axis direction;
The device comprises a substrate, a device structure, a capping structure and a second electrode, wherein the device structure is arranged on one side, away from the substrate, of the substrate;
wherein projections of both the first electrode and the second electrode overlap in a thickness direction of the substrate to constitute a pressure detection capacitance.
Further, a fixed polar plate corresponding to the movable mass block is arranged on the substrate, a preset gap is reserved between the movable mass block and the fixed polar plate in the thickness direction of the substrate, and the movable mass block and the fixed polar plate form an inertial detection capacitor aiming at the acceleration in the sensing shaft direction.
Further, a second anchor point is arranged on the substrate, and the fixed mass block is electrically connected with the second anchor point so as to be electrically connected to an external circuit through the second anchor point;
Wherein, in the thickness direction of the substrate, the orthographic projection of the second anchor point on the substrate is positioned in the orthographic projection range of the fixed mass block on the substrate.
Further, the device structure further includes a support portion provided around the movable mass, a first bonding structure is provided between the support portion and the cap structure, and the second electrode is electrically connected with the first bonding structure to be electrically connected to an external circuit through the first bonding structure.
Further, the first bonding structure includes stacked first and second bonding bodies and a wall structure disposed around the first and second bonding bodies;
the first bonding body and the second bonding body are made of metal materials, and the wall structure is made of semiconductor materials;
wherein there is a gap between the wall structure and the stacked first and second bond in an extension direction in which an inner diameter of the wall structure points to an outer diameter.
Further, the first conductive layer further includes an isolation structure penetrating through the first conductive layer in thickness to partition the first conductive layer into a first electrode region and a second electrode region surrounding the first electrode region, the first electrode region constituting the second electrode.
Further, the isolation structure includes an isolation trench.
In some embodiments, the capping structure further comprises a second dielectric layer fixedly connected to the movable electrode region, the second dielectric layer being located on a side of the movable electrode region adjacent to the device structure in a thickness direction of the capping structure.
In some embodiments, the capping structure further comprises a second dielectric layer and a third conductive layer fixedly connected to the movable electrode region, wherein the third conductive layer is configured as the second electrode; the second dielectric layer is located between the first conductive layer and the third conductive layer in the thickness direction of the capping structure.
Further, the method further comprises the following steps:
a first conductive mass located within the first hollowed out groove, and in a thickness direction of the capping structure, an orthographic projection of the first conductive mass on the first conductive layer is located outside an orthographic projection range of the fixed mass on the first conductive layer;
and the second bonding structure is arranged between the first conductive mass block and the second electrode, and the second electrode is electrically connected with the first conductive mass block through the second bonding structure.
Further, the second bonding structure includes stacked first and second bonding bodies and a wall structure disposed around the first and second bonding bodies;
the first bonding body and the second bonding body are made of metal materials, and the wall structure is made of semiconductor materials;
wherein there is a gap between the wall structure and the stacked first and second bond in an extension direction in which an inner diameter of the wall structure points to an outer diameter.
Further, the first conductive mass block is in a strip shape and is arranged at one side edge of the fixed mass block.
Further, the first conductive mass is annular and is circumferentially arranged on the periphery of the fixed mass.
Further, the second film layer is a conductive film layer.
According to yet another aspect of the present invention, there is provided a microelectromechanical component integrated with an inertial and pressure sensor, comprising:
the substrate is provided with a plurality of holes,
the device structure is positioned on one side of the substrate and comprises a movable mass block, a first anchor point for fixing the movable mass block and a fixed mass block, wherein the movable mass block is eccentrically arranged in a first direction, the fixed mass block is positioned on one side of the movable mass block, which is relatively small in mass, a first hollowed-out groove is formed in the movable mass block, the fixed mass block is positioned in the first hollowed-out groove, the fixed mass block comprises a first sub-mass block and a second sub-mass block, the first sub-mass block forms a first sub-electrode, and the second sub-mass block forms a second sub-electrode;
The device comprises a substrate, a device structure, a capping structure and a second dielectric layer, wherein the device structure is arranged on one side, away from the substrate, of the substrate;
wherein, in the thickness direction of the substrate, the orthographic projection of the first sub-mass on the first conductive layer is positioned within the orthographic projection range of the second groove on the first conductive layer, and the orthographic projection of the second sub-mass on the first conductive layer is positioned outside the orthographic projection range of the second groove on the first conductive layer; the first sub-electrode and the second electrode are projected and overlapped to form a pressure detection capacitor; the second sub-electrode overlaps with the second electrode projection to form a reference detection capacitance.
Further, the first and second sub-masses are equal in area.
Further, the method further comprises the following steps:
a second conductive mass located within the first hollowed out groove, and in a thickness direction of the capping structure, an orthographic projection of the second conductive mass on the first conductive layer is located outside an orthographic projection range of the second groove on the first conductive layer;
and the third bonding structure is arranged between the second conductive mass block and the first conductive layer, and the second electrode is electrically connected with the second conductive mass block through the third bonding structure.
Further, the third bond structure includes stacked first and second bonds and a wall structure disposed around the first and second bonds;
the first bonding body and the second bonding body are made of metal materials, and the wall structure is made of semiconductor materials;
wherein there is a gap between the wall structure and the stacked first and second bond in an extension direction in which an inner diameter of the wall structure points to an outer diameter.
Further, the first conductive layer further includes an isolation structure penetrating through the first conductive layer in thickness to isolate the potential of the movable electrode region.
Further, the method further comprises the following steps:
the signal processing circuit chip is respectively and electrically connected with the pressure detection capacitor and the reference detection capacitor so as to receive and process signal output of the micro-electromechanical component corresponding to each working state;
and carrying out preset differential operation on the signal output values of the corresponding pressure detection capacitor and the reference detection capacitor based on the condition that the micro-electromechanical component is in each working state so as to obtain differential output corresponding to the micro-electromechanical component.
Further, the second film layer is a conductive film layer.
According to another aspect of the present invention, there is provided a microelectromechanical component integrated with an inertial and pressure sensor, comprising:
the substrate is provided with a plurality of holes,
a device structure located on one side of the substrate, the device structure including a movable mass, a first anchor for fixing the movable mass, and a fixed mass, the movable mass being eccentrically disposed with respect to a first direction, the fixed mass being located on a relatively small side of the movable mass, a first hollowed-out groove being provided on the movable mass, the fixed mass being located in the first hollowed-out groove, the fixed mass including a third sub-mass and a fourth sub-mass, the third sub-mass constituting a third sub-electrode, the fourth sub-mass constituting a fourth sub-electrode;
The device comprises a substrate, a device structure, a capping structure and a third groove, wherein the device structure is arranged on one side, away from the substrate, of the substrate;
wherein in a thickness direction of the substrate, the third sub-electrode overlaps with the second electrode projection to constitute a first pressure detection capacitance, and the fourth sub-electrode overlaps with the second electrode projection to constitute a second pressure detection capacitance.
Further, one electrode of the third sub-electrode and the fourth sub-electrode is electrically connected to positive electrode potential, and the other electrode is electrically connected to negative electrode potential; the second electrode is a floating potential;
the first pressure detection capacitor and the second pressure detection capacitor are connected in series.
Further, the second film layer is a conductive film layer.
The invention provides a solution for integrating an inertial sensor and a pressure sensor into a single chip, and aims to provide a device structure with a movable mass block, wherein the movable mass block is eccentrically arranged relative to a first direction, a fixed mass block is positioned on one side of the movable mass block, which is relatively small in mass, a first hollowed-out groove is formed in the movable mass block, the fixed mass block is positioned in the first hollowed-out groove, and the fixed mass block forms a first electrode; a movable electrode region is provided on the cap structure, the movable electrode region constituting a second electrode, projections of both the first electrode and the second electrode overlapping in a thickness direction of the substrate to constitute a pressure detecting capacitance. According to the technical scheme provided by the invention, the pressure sensor is integrated on the basis of not changing the volume of the original inertial sensor, so that the integration of inertial sensing and pressure detection is realized.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other embodiments may be obtained according to these drawings without inventive effort to a person skilled in the art.
Fig. 1 is a schematic top view of a part of a microelectromechanical component of an inertial and pressure sensor according to a first embodiment of the present application after removing a cover.
Fig. 2 is a schematic top view of a portion of a capping structure of a microelectromechanical component of an inertial and pressure sensor provided in a first embodiment of the application.
Fig. 3A is a schematic diagram of a cross-sectional structure of a microelectromechanical component of an inertial and pressure sensor provided in accordance with a first embodiment of the present application, taken along the direction A-A in fig. 1.
FIG. 3B is a schematic diagram of a cross-sectional structure of a microelectromechanical component of an inertial and pressure sensor, provided in accordance with a first embodiment of the present application, taken along the direction A-A in FIG. 1.
FIG. 3C is a schematic diagram of a cross-sectional structure of a microelectromechanical component of an inertial and pressure sensor provided in accordance with a first embodiment of the present application, taken along the direction A-A in FIG. 1.
Fig. 3D is a schematic cross-sectional structure of a bonding structure according to an embodiment of the present application.
Fig. 4 is a schematic cross-sectional structural view of a microelectromechanical component of an inertial and pressure sensor provided in accordance with a first embodiment of the present application, taken along the direction B-B in fig. 1.
Fig. 5 is a schematic top view of a part of a microelectromechanical component of an inertial and pressure sensor according to a second embodiment of the present application after removing a cover.
FIG. 6 is a schematic cross-sectional structural view of a microelectromechanical component of an inertial and pressure sensor, as provided in a second embodiment of the present application, taken along the direction A-A in FIG. 5.
Fig. 7 is a schematic diagram of the principle provided by the second embodiment of the present application.
Fig. 8 is a schematic top view of a portion of a microelectromechanical component of an inertial and pressure sensor according to a third embodiment of the present application after removal of a cover top structure.
FIG. 9 is a schematic cross-sectional view of a microelectromechanical component of an inertial and pressure sensor, as provided in a third embodiment of the application, taken along the direction A-A in FIG. 8.
FIG. 10 is a schematic cross-sectional structural view of a microelectromechanical component of an inertial and pressure sensor, as provided in a third embodiment of the present application, taken along the direction B-B in FIG. 8.
FIG. 11 is a schematic cross-sectional structural view of a microelectromechanical component of an inertial and pressure sensor, as provided in a third embodiment of the present application, along the direction C-C in FIG. 8.
Fig. 12 is a schematic top view of a portion of a microelectromechanical component of an inertial and pressure sensor according to a fourth embodiment of the present application after removal of a cover top structure.
FIG. 13 is a schematic cross-sectional structural view of a microelectromechanical component of an inertial and pressure sensor, as provided by a fourth embodiment of the present application, taken along the direction A-A in FIG. 12.
Fig. 14 is a schematic diagram provided by the fourth embodiment of the present application.
Detailed Description
The foregoing description is only an overview of the present invention, and is intended to be implemented in accordance with the teachings of the present invention, as well as the preferred embodiments thereof, together with the following detailed description of the invention, given by way of illustration only, together with the accompanying drawings.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically connected, electrically connected or can be communicated with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
Example 1
Fig. 1 is a schematic top view of a part of a microelectromechanical component of an inertial and pressure sensor according to a first embodiment of the present application after removing a cover. Fig. 2 is a schematic top view of a portion of a capping structure of a microelectromechanical component of an inertial and pressure sensor provided in a first embodiment of the application. Fig. 3A is a schematic diagram of a cross-sectional structure of a microelectromechanical component of an inertial and pressure sensor provided in accordance with a first embodiment of the present application, taken along the direction A-A in fig. 1. Fig. 4 is a schematic cross-sectional structural view of a microelectromechanical component of an inertial and pressure sensor provided in accordance with a first embodiment of the present application, taken along the direction B-B in fig. 1.
As shown in fig. 1, 2, 3A, and 4, embodiments of the present application provide a microelectromechanical component integrated with an inertial and pressure sensor, including:
the substrate 100 is provided with a plurality of substrates,
a device structure 200, the device structure 200 being located on one side of the substrate 100, the device structure 200 comprising a movable mass 201, a first anchor 205 for fixing the movable mass 201, and a fixed mass 202, the movable mass 201 being eccentrically located with respect to a first direction, the fixed mass 202 being located on a side of the movable mass 201 where the mass is relatively small, the fixed mass 202 constituting a first electrode, the movable mass being subject to a corresponding rotational displacement in a sense axis direction in response to an acceleration in the sense axis direction;
in this embodiment, a first hollow groove 210 is disposed on the movable mass 201, and the fixed mass 202 is located in the first hollow groove 210. The motion of the movable mass 201 is independent from the fixed mass 202, and the movable mass 201 is eccentrically arranged through the first hollow groove 210, so that the acceleration detection of the inertial sensor in the z direction is realized, and the sensitivity of the detection in the z direction acceleration is improved. The fixed mass 202 is electrically connected to a corresponding signal terminal (not shown) on the substrate 100 to form a first electrode of the first pressure detecting capacitor, and the fixed mass 202 is embedded into the first hollow groove 210 of the movable mass 201, so that the volume of the inertial sensor is not increased.
A capping structure 300, where the capping structure 300 is located on a side of the device structure 200 facing away from the substrate 100, the capping structure 300 includes a first conductive layer 301, a first dielectric layer 302, and a second film layer 303 that are sequentially stacked, the capping structure 300 further includes a first groove 330, the first groove 330 penetrates through the second film layer 303 and the first dielectric layer 302 in a thickness direction, and a bottom of the first groove 330 is located on a surface of the first conductive layer 301 to expose a portion of the first conductive layer 301, so as to form a movable electrode region 312 that is suspended above the fixed mass 202 correspondingly, and the movable electrode region 312 forms a second electrode;
wherein projections of both the first electrode and the second electrode overlap in a thickness direction of the substrate 100 to constitute a pressure detection capacitance.
As can be seen from the above, the embodiment of the present application provides a solution for integrating an inertial sensor and a pressure sensor into a single chip, by arranging a movable mass block on a device structure, wherein the movable mass block is eccentrically arranged with respect to a first direction, the fixed mass block is positioned at one side of the movable mass block, the mass of which is relatively small, a first hollow groove is formed in the movable mass block, the fixed mass block is positioned in the first hollow groove, and the fixed mass block forms a first electrode; a movable electrode region is provided on the cap structure, the movable electrode region constituting a second electrode, projections of both the first electrode and the second electrode overlapping in a thickness direction of the substrate to constitute a pressure detecting capacitance. According to the technical scheme provided by the invention, the pressure sensor is integrated on the basis of not changing the volume of the original inertial sensor, so that the integration of inertial sensing and pressure detection is realized.
Illustratively, a fixed polar plate (not shown) corresponding to the movable mass 201 is disposed on the substrate 100, and a preset gap is provided between the movable mass 201 and the fixed polar plate, and the movable mass 201 and the fixed polar plate form an inertial detection capacitor for the acceleration in the sensing axis direction. When no external signal exists, the movable mass block 201 and the fixed polar plate are relatively static, no capacitance change exists on two sides of a rocker of the movable mass block 201, when the Z-axis acceleration is measured, the movable mass block 201 deflects in the Z-axis direction relative to the first anchor point 205, the moving polar plates of the movable mass block 201 on two sides of the first anchor point 205 move oppositely relative to the fixed polar plate, at the moment, the capacitance on two sides of the rocker changes, and the displacement of the moving polar plates of the movable mass block 201 can be calculated according to the differential capacitance.
Further, a second anchor 102 is disposed on the substrate 100, and the fixed mass 202 is electrically connected to the second anchor 102 to be electrically connected to an external circuit through the second anchor 102.
In order to reduce the electrical signal transmission distance between the second anchor 102 and the fixed mass 202, the orthographic projection of the second anchor 102 on the substrate 100 is located within the orthographic projection range of the fixed mass 202 on the substrate 100 in the thickness direction of the substrate 100.
Further, the device structure 200 further includes a supporting portion 203, the supporting portion 203 is disposed around the movable mass 201, a first bonding structure 500 is disposed between the supporting portion 203 and the capping structure 300, and the first conductive layer 301 is electrically connected to the first bonding structure 500 to be electrically connected to an external circuit through the first bonding structure 500.
Illustratively, as shown in fig. 3D, the first bond structure 500 includes stacked first and second bond bodies 510, 520 and a wall structure 530 disposed around the first and second bond bodies 510, 520; the first bonding body 510 and the second bonding body 520 are made of metal materials, and the wall structure 530 is made of semiconductor materials; wherein there is a gap between the wall structure 530 and the stacked first and second bond in an extension direction in which an inner diameter of the wall structure 530 points to an outer diameter.
Specifically, the first bonding body 510 and the second bonding body 520 may be selected from any one or two metals of the following bonding materials, for example AL, ti, cr, ni, cu, ru, rh, ir, pt, ta, fe, au. AL is preferred. Wherein the height of the first bonding body 510 is 0.2-2.5 micrometers, and the height of the second bonding body 520 is 0.2-2.5 micrometers.
In particular, the wall structure 530 may be selected from several bonding materials, such as silicon oxide, silicon nitride, and the like. Silicon oxide is preferred. The height of the wall structure 530 is 0.6-1.0 times the sum of the heights of the first bonding body 510 and the second bonding body 520.
During the bonding process, the first bonding body 510 and the second bonding body 520 may be melted after being heated at a high temperature, so that the wall structure 530 surrounding the first bonding body 510 and the second bonding body 520 may prevent the melted bonding material from overflowing onto other structures, thereby preventing the failure of the device. In addition, a "gap" needs to be reserved between the wall structure 530 and the first bond 510 and the second bond 520, thereby allowing some space for the overflowed bonding material. The width W2 of the gap is 5-10 microns. Illustratively, the bonding structure occupies a region having a cross-sectional width W1 of between 30 and 100 microns.
In some embodiments, the roofing structure 300 comprises a two or more layer film structure; illustratively, the capping structure 300 includes a first conductive layer 301 and a first dielectric layer 302 fixedly connected to the first conductive layer 301, where the first conductive layer 301 is silicon, for example, doped in silicon to be conductive, and the first dielectric layer 302 is an oxide layer, for example, silicon oxide, or the like.
In some embodiments, the first conductive layer 301 is located on a side of the first dielectric layer 302 facing the device structure 200 in a thickness direction of the substrate 100.
In some embodiments, the first conductive layer 301 is located on a side of the first dielectric layer 302 remote from the device structure 200 in a thickness direction of the substrate 100.
Illustratively, the capping structure 300 is fabricated based on the SOI (Silicon On Insulator) structure, and illustratively, the capping structure 300 includes a first conductive layer 301, a first dielectric layer 302, and a second film layer 303, wherein the first dielectric layer 302 is sandwiched between the first conductive layer 301 and the second film layer 303; the second film 303 is provided with an opening penetrating the second film 303 in the thickness direction to expose the first groove 330.
In some embodiments, to improve the shielding performance of the capping structure 300, the second film 303 is a conductive film.
Further, the first conductive layer 301 further includes an isolation structure 313, and the isolation structure 313 penetrates the first conductive layer 301 in the thickness direction to partition the first conductive layer 301 into a first electrode region 31a and a second electrode region 32 surrounding the first electrode region 31a, and a portion of the first electrode region 31a exposed from the first groove 330 constitutes a movable electrode region 312. In the embodiment of the present application, the first electrode area 31a is fixed in a peripheral fixed manner, so the first conductive layer 301 only has the deformation capability at the position of the movable electrode area 312, but does not have the deformation capability at the position of the second electrode area 32 because the movable electrode area 312 is fixed, and in the actual use process, the portion of the movable electrode area 312 of the first conductive layer 301 opposite to the first electrode (the fixed mass 202) is the effective capacitance area (the sensitivity contribution area), so the effective capacitance area of the first electrode area 31a is separated from the ineffective capacitance area of the second electrode area 32 by the isolation structure 313, not only can play a role of reducing parasitic capacitance, but also can promote the capacitance variation of the effective capacitance area, thereby achieving the role of promoting the sensitivity of the product.
Specifically, the isolation structure 313 includes an isolation trench. In other embodiments, an insulating layer may be filled in the isolation trench to separate the first electrode region 31a from the second electrode region 32 of the first conductive layer 301.
In some embodiments, as shown in fig. 3B, to avoid a problem that when the pressure applied to the pressure sensor is too high, the movable electrode area 312 (second electrode) is in contact with the fixed first electrode (fixed mass 202) and causes a short circuit, the capping structure 300 further includes a second dielectric layer 304 fixedly connected to the movable electrode area 312; the second dielectric layer 304 is located on a side of the movable electrode region 312 adjacent to the device structure 200 in the thickness direction of the capping structure 300. At this time, even when the applied pressure is too high, the movable electrode region 312 is brought into contact with the fixed mass 202, and a technical problem of short-circuiting between the first electrode and the second electrode does not occur.
In some embodiments, as shown in fig. 3C, the capping structure 300 further includes a second dielectric layer 304 and a third conductive layer 305 fixedly connected to the movable electrode region 312, wherein the third conductive layer 305 is configured as the second electrode; the second dielectric layer 304 is located between the first conductive layer 301 and the third conductive layer 305 in the thickness direction of the capping structure 300. Since the third conductive layer 305 is separately configured as the second electrode, it is not necessary to manufacture an isolation structure on the first conductive layer 301, so that the parasitic capacitance interference problem of the second electrode region 32 of the first conductive layer 301 can be avoided, thereby improving the mechanical stability of the first conductive layer 301 on the capping structure 300.
With continued reference to fig. 1-4, the device structure 200 further includes: the first conductive mass 204, the first conductive mass 204 is located in the first hollowed out groove 210, and in the thickness direction of the capping structure 300, the orthographic projection of the first conductive mass 204 on the capping structure 300 is located outside the orthographic projection range of the first groove 330 on the capping structure 300; a second bonding structure 400, the second bonding structure 400 being disposed between the first conductive mass 204 and the second electrode, the second electrode being electrically connected to the first conductive mass 204 through the second bonding structure 400.
Further, the second bonding structure 400 includes stacked first and second bonding bodies and a wall structure disposed around the first and second bonding bodies; the first bonding body and the second bonding body are made of metal materials, and the wall structure is made of semiconductor materials; wherein there is a gap between the wall structure and the stacked first and second bond in an extension direction in which an inner diameter of the wall structure points to an outer diameter.
In this embodiment, the second bonding structure 400 is similar to the first bonding structure 500. The embodiments of the present invention are not described herein.
Further, a third anchor 103 is disposed on the substrate 100, and the first conductive mass 204 is electrically connected to the third anchor 103, so as to be electrically connected to an external circuit through the third anchor 103.
Further, in order to reduce the electrical signal transmission distance between the third anchor 103 and the first conductive mass 204, in the thickness direction of the substrate 100, the orthographic projection of the third anchor 103 on the substrate 100 is located within the orthographic projection range of the first conductive mass 204 on the substrate 100.
Specifically, the first conductive mass 204 is electrically connected to the second electrode on the cap structure 300 through the second bonding structure 400, and the first conductive mass 204 is electrically connected to the corresponding signal terminal on the substrate 100 to transmit an electrical signal to the second electrode; wherein the second bonding structure 400 includes a metal and a semiconductor material, thereby enabling to improve reliability of electrical connection.
In the present embodiment, the first conductive mass 204 is in a strip shape and is disposed at one side edge of the fixed mass 202.
Illustratively, the movable mass 201 is further provided with a second hollow slot 220, and the first anchor 205 is located in the second hollow slot 220; the device structure 200 further comprises two elastic beams 206 connected to the first anchor point 205 and extending in a second direction, wherein the second direction is perpendicular to the first direction.
Example two
Fig. 5 is a schematic top view of a part of a microelectromechanical component of an inertial and pressure sensor according to a second embodiment of the present application after removing a cover. FIG. 6 is a schematic cross-sectional structural view of a microelectromechanical component of an inertial and pressure sensor, as provided in a second embodiment of the present application, taken along the direction A-A in FIG. 5. Fig. 7 is a schematic diagram of the principle provided by the second embodiment of the present application.
As shown in fig. 5-6, unlike the first conductive mass 204 in this embodiment is annular and disposed around the perimeter of the fixed mass 202.
A second bonding structure 400 is disposed between the first conductive mass 204 and the second electrode, which is electrically connected to the first conductive mass 204 through the second bonding structure 400. The first conductive mass 204 is electrically connected to a second electrode on the cap structure 300 by a second bonding structure 400, and the first conductive mass 204 is electrically connected to a corresponding signal terminal on the substrate 100 to transmit an electrical signal to the second electrode; wherein the second bonding structure 400 comprises a metal and a semiconductor material.
In this embodiment, the second keying structure 400 is also annular and is disposed around the perimeter of the fixed mass 202. As shown in fig. 7, since the second bonding structure 400 includes metal therein, the metal ring surrounding the two electrode plates (the first electrode and the second electrode) can effectively block the inductance line between the electrode plates, thereby functioning to suppress parasitic capacitance.
Example III
Fig. 8 is a schematic top view of a portion of a microelectromechanical component of an inertial and pressure sensor according to a third embodiment of the present application after removal of a cover top structure. FIG. 9 is a schematic cross-sectional view of a microelectromechanical component of an inertial and pressure sensor, as provided in a third embodiment of the application, taken along the direction A-A in FIG. 8. FIG. 10 is a schematic cross-sectional structural view of a microelectromechanical component of an inertial and pressure sensor, as provided in a third embodiment of the present application, taken along the direction B-B in FIG. 8. FIG. 11 is a schematic cross-sectional structural view of a microelectromechanical component of an inertial and pressure sensor, as provided in a third embodiment of the present application, along the direction C-C in FIG. 8.
As shown in fig. 8 to 11, in the microelectromechanical component integrated with the inertial and pressure sensor provided in the present embodiment, it includes:
the substrate 100 is provided with a plurality of substrates,
a device structure 200, the device structure 200 being located on one side of the substrate 100, the device structure 200 comprising a movable mass 201, a first anchor 205 for fixing the movable mass 201, and a fixed mass, the movable mass 201 being eccentrically located with respect to a first direction, the fixed mass being located on a side of the movable mass 201 where the mass is relatively small, the movable mass 201 being provided with a first hollowed out groove 210, the fixed mass 202 being located within the first hollowed out groove 210, the fixed mass 202 comprising a first sub-mass 2021 and a second sub-mass 2022, the first sub-mass 2021 constituting a first sub-electrode, the second sub-mass 2022 constituting a second sub-electrode;
A capping structure 300, where the capping structure 300 is located on a side of the device structure 200 facing away from the substrate 100, the capping structure 300 includes a first conductive layer 301, a first dielectric layer 302, and a second film layer 303 that are sequentially stacked, the capping structure 300 further includes a second groove 340, where the second groove 340 penetrates through the second film layer 303 and the first dielectric layer 302 in a thickness direction, and a bottom of the second groove 340 is located on a surface of the first conductive layer 301 to expose a portion of the first conductive layer 301, so as to form a movable electrode region 312 that is suspended above the first sub-mass 2021 correspondingly, and a portion of the first conductive layer 301 forms a second electrode;
wherein, in the thickness direction of the substrate 100, the orthographic projection of the first sub-mass 2021 on the first conductive layer 301 is located within the orthographic projection range of the second groove on the first conductive layer 301, and the orthographic projection of the second sub-mass 2022 on the first conductive layer 301 is located outside the orthographic projection range of the second groove 340 on the first conductive layer 301; the first sub-electrode and the second electrode are projected and overlapped to form a pressure detection capacitor; the second sub-electrode overlaps with the second electrode projection to form a reference detection capacitance.
Further, the first sub-mass 2021 and the second sub-mass 2022 are equal in area.
When no external force acts on the movable electrode area 312, the movable electrode area 312 of the first conductive layer 301 is not deformed, the distance between the movable electrode area 312 and the first sub-mass 2021 is the same as the distance between the first conductive layer 301 and the second sub-mass 2022 on the edge area of the movable electrode area, and by optimally designing the areas of the first sub-mass 2021 and the second sub-mass 2022 to be the same, the capacitance values of the pressure detection capacitor and the reference detection capacitor are ensured to be the same in the non-working state, so that the zero point error of the pressure sensor chip is reduced. When external pressure is applied to the movable electrode area 312, the movable electrode area 312 is fixed along the boundary corresponding to the second groove 340, and when the movable electrode area 312 is stressed, the farther from the boundary corresponding to the second groove 340, the larger the deformation amount of the movable electrode area 312 occurs, and the smaller the relative deformation of the edge area of the movable electrode area, so that the change amount of the pressure detection capacitance is larger, and the reference detection capacitance hardly changes greatly.
Further, the microelectromechanical component in the present application further includes: a second conductive mass 2042, the second conductive mass 2042 being located within the first hollowed out groove 210, and in a thickness direction of the capping structure 300, an orthographic projection of the second conductive mass 2042 on the first conductive layer 301 being located outside an orthographic projection range of the second recess 340 on the first conductive layer 301; a third bond structure 600, the third bond structure 600 being disposed between the second conductive mass 2042 and the first conductive layer 301, the second electrode being electrically connected to the second conductive mass 2042 through the third bond structure 600.
Further, the third bonding structure 600 includes stacked first and second bonding bodies and a wall structure disposed around the first and second bonding bodies; the first bonding body and the second bonding body are made of metal materials, and the wall structure is made of semiconductor materials; wherein there is a gap between the wall structure and the stacked first and second bond in an extension direction in which an inner diameter of the wall structure points to an outer diameter.
In this embodiment, the third bonding structure 600 is similar to the first bonding structure 500. The embodiments of the present invention are not described herein.
In some embodiments, to improve the shielding performance of the capping structure 300, the second film 303 is a conductive film.
Further, a fourth anchor 104 is disposed on the substrate 100, and the second conductive mass 2042 is electrically connected to the fourth anchor 104 to be electrically connected to an external circuit through the fourth anchor 104.
Further, a fifth anchor 105 and a sixth anchor 106 are disposed on the substrate 100, and the first sub-mass 2021 is electrically connected to the fifth anchor 105 so as to be electrically connected to an external circuit through the fifth anchor 105; the second sub-mass 2022 is electrically connected to the sixth anchor 106 to be electrically connected to an external circuit through the sixth anchor 106.
Further, the first conductive layer 301 further includes an isolation structure 313, the isolation structure 313 penetrating the first conductive layer 301 in thickness to isolate the potential of the movable electrode region 312.
Specifically, the isolation structure 313 includes an isolation trench. In other embodiments, an insulating layer may be filled in the isolation trench to isolate the potential of the movable electrode region.
Further, the microelectromechanical component in the present application further includes: the signal processing circuit chip (such as an ASIC chip) is respectively and electrically connected with the pressure detection capacitor and the reference detection capacitor so as to receive and process the signal output of the micro-electromechanical component corresponding to each working state; and when the micro-electromechanical component is in each working state, carrying out preset differential operation on signal output values of the corresponding pressure detection capacitor and the reference detection capacitor so as to obtain differential output corresponding to the micro-electromechanical component, thereby calculating the actual pressure sensing capacitor.
Example IV
Fig. 12 is a schematic top view of a portion of a microelectromechanical component of an inertial and pressure sensor according to a fourth embodiment of the present application after removal of a cover top structure. FIG. 13 is a schematic cross-sectional structural view of a microelectromechanical component of an inertial and pressure sensor, as provided by a fourth embodiment of the present application, taken along the direction A-A in FIG. 12. Fig. 14 is a schematic diagram provided by the fourth embodiment of the present application.
As shown in fig. 12 to 14, in the microelectromechanical component integrated with the inertial and pressure sensor provided in the present embodiment, it includes:
the substrate 100 is provided with a plurality of substrates,
a device structure 200, the device structure 200 being located on one side of the substrate 100, the device structure 200 comprising a movable mass 201, a first anchor 205 for fixing the movable mass 201, and a fixed mass, the movable mass 201 being eccentrically located with respect to a first direction, the fixed mass being located on a relatively small side of the movable mass 201, the movable mass 201 being provided with a first hollowed out groove 210, the fixed mass being located within the first hollowed out groove 210, the fixed mass comprising a third sub-mass 2023 and a fourth sub-mass 2024, the third sub-mass 2023 constituting a third sub-electrode, the fourth sub-mass 2024 constituting a fourth sub-electrode;
a capping structure 300, where the capping structure 300 is located on a side of the device structure 200 facing away from the substrate 100, the capping structure 300 includes a first conductive layer 301, a first dielectric layer 302, and a second film layer 303 that are sequentially stacked, the capping structure 300 further includes a third groove 350, where the third groove 350 penetrates through the second film layer 303 and the first dielectric layer 302 in a thickness direction, and a bottom of the third groove 350 is located on a surface of the first conductive layer 301 to expose a portion of the first conductive layer 301, so as to form a movable electrode region 312 that is suspended above the third sub-mass and the fourth sub-mass, and the movable electrode region 312 forms a second electrode;
Wherein in a thickness direction of the substrate 100, the third sub-electrode overlaps with the second electrode projection to constitute a first pressure detection capacitance, and the fourth sub-electrode overlaps with the second electrode projection to constitute a second pressure detection capacitance.
Unlike the third embodiment, in the thickness direction of the substrate 100, the orthographic projections of the third sub-mass 2023 and the fourth sub-mass 2024 on the capping structure 300 are each located within the orthographic projection range of the first groove 330 on the capping structure 300.
In this embodiment, the second electrode (movable electrode area 312) is a floating potential and can be used as an intermediate medium between the third sub-electrode and the fourth sub-electrode. The third sub-electrode and the second electrode form a first pressure detection capacitor, the fourth sub-electrode and the second electrode form a second pressure detection capacitor, and the second electrode can serve as a connection point between the first pressure detection capacitor and the second pressure detection capacitor.
One of the third and fourth sub-electrodes is electrically connected to the positive potential and the other electrode is electrically connected to the negative potential, such that the first and second pressure sensing capacitances form two capacitance structures in series to commonly sense the pressure signal applied to the movable electrode area 312. The method is beneficial to reducing the manufacturing process steps of graphically manufacturing the first bonding structure and/or the second bonding structure which are electrically interconnected with the second electrode, and saves the manufacturing cost. As can be seen from fig. 14, in the present embodiment, the third sub-mass 2023 and the second electrode form a first pressure detection capacitor C1, the fourth sub-mass 2024 and the second electrode form a second pressure detection capacitor C2, and the first pressure detection capacitor C1 and the second pressure detection capacitor C2 form a series circuit. For convenience of explanation of the sensitivity of the pressure sensor formed by the series connection of the first pressure detecting capacitor C1 and the second pressure detecting capacitor C2 in the present embodiment, similarly, when the movable electrode area 312 is not deformed, the total capacitance value of the series circuit formed by the first pressure detecting capacitor C1 and the second pressure detecting capacitor C2 is set to be C 0 Since the effective area of the first pressure detection capacitor formed by the third sub-mass 2023 is equal to the effective area of the second pressure detection capacitor formed by the fourth sub-mass 2024, the initial capacitance of the first pressure detection capacitor C1 and the initial capacitance of the second pressure detection capacitor C2 are respectively C 0 /2. Upon deformation of the movable electrode region 312, if the deformation causes the total capacitance to change to fatc 0 Then the capacitance variation amounts on the first pressure detection capacitance C1 and the second pressure detection capacitance C2 are father C, respectively 0 Therefore, the sensitivity of the series circuit formed by the first pressure detection capacitor C1 and the second pressure detection capacitor C2 is:
。
as can be seen from this, in the present embodiment, the fixed mass is divided into the third sub-mass 2023 and the fourth sub-mass 2024 that are isolated from each other, the third sub-mass 2023, the fourth sub-mass 2024, and the second electrode form the first pressure detection capacitor C1 and the second pressure detection capacitor C2, respectively, and the sensitivity of the series circuit formed by the first pressure detection capacitor C1 and the second pressure detection capacitor C2 can be kept unchanged. The manufacturing process can be further simplified, the cost is reduced, and the reliability and yield of the product are improved.
In some embodiments, to improve the shielding performance of the capping structure 300, the second film 303 is a conductive film.
Further, a seventh anchor 107 and an eighth anchor 108 are disposed on the substrate 100, and the third sub-mass 2023 is electrically connected to the seventh anchor 107 so as to be electrically connected to an external circuit through the seventh anchor 107;
the fourth sub-mass 2024 is electrically connected to the eighth anchor 108 to be electrically connected to an external circuit through the eighth anchor 108.
Further, in order to shorten the distance of electric signal transmission, in the thickness direction of the substrate 100, the orthographic projection of the seventh anchor 107 on the substrate 100 is located within the orthographic projection range of the third sub-mass 2023 on the substrate 100, and the orthographic projection of the eighth anchor 108 on the substrate 100 is located within the orthographic projection range of the fourth sub-mass 2024 on the substrate 100.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (24)
1. A microelectromechanical component integrated with an inertial and pressure sensor, comprising:
the substrate is provided with a plurality of holes,
a device structure located on one side of the substrate, the device structure comprising a movable mass, a first anchor for fixing the movable mass, and a fixed mass, the movable mass being eccentrically disposed with respect to a first direction, the fixed mass being located on a relatively small side of the movable mass, the movable mass being provided with a first hollowed out groove, the fixed mass being located within the first hollowed out groove, the fixed mass constituting a first electrode, the movable mass being subject to a corresponding rotational displacement in a sense axis direction in response to an acceleration in the sense axis direction;
the device comprises a substrate, a device structure, a capping structure and a second electrode, wherein the device structure is arranged on one side, away from the substrate, of the substrate;
Wherein projections of both the first electrode and the second electrode overlap in a thickness direction of the substrate to constitute a pressure detection capacitance.
2. The microelectromechanical component of claim 1, characterized in that,
and a fixed polar plate corresponding to the movable mass block is arranged on the substrate, a preset gap is reserved between the movable mass block and the fixed polar plate in the thickness direction of the substrate, and the movable mass block and the fixed polar plate form an inertia detection capacitor aiming at the acceleration in the sensing axis direction.
3. The microelectromechanical component of claim 2, characterized in that,
the substrate is provided with a second anchor point, and the fixed mass block is electrically connected with the second anchor point so as to be electrically connected to an external circuit through the second anchor point;
wherein, in the thickness direction of the substrate, the orthographic projection of the second anchor point on the substrate is positioned in the orthographic projection range of the fixed mass block on the substrate.
4. The microelectromechanical component of claim 1, wherein the device structure further comprises a support portion disposed around the movable mass, a first bonding structure disposed between the support portion and the capping structure, the first conductive layer electrically connected to the first bonding structure.
5. The microelectromechanical component of claim 4, characterized in that,
the first bonding structure comprises a stacked first bonding body and second bonding body and a wall structure arranged around the first bonding body and the second bonding body;
the first bonding body and the second bonding body are made of metal materials, and the wall structure is made of semiconductor materials;
wherein there is a gap between the wall structure and the stacked first and second bond in an extension direction in which an inner diameter of the wall structure points to an outer diameter.
6. The microelectromechanical component of claim 4, wherein the first conductive layer further comprises an isolation structure that extends through the first conductive layer in thickness to separate the first conductive layer into a first electrode region and a second electrode region surrounding the first electrode region, the first electrode region constituting the second electrode.
7. The microelectromechanical component of claim 6, characterized in that,
the isolation structure includes an isolation trench.
8. The microelectromechanical component of claim 6, characterized in that,
the capping structure further comprises a second dielectric layer fixedly connected with the movable electrode region;
The second dielectric layer is located on a side of the movable electrode region, which is close to the device structure, in a thickness direction of the capping structure.
9. The microelectromechanical component of claim 4, characterized in that,
the capping structure further comprises a second dielectric layer and a third conductive layer fixedly connected with the movable electrode region, wherein the third conductive layer is configured as the second electrode;
the second dielectric layer is located between the first conductive layer and the third conductive layer in the thickness direction of the capping structure.
10. The microelectromechanical component of any of claims 1 to 9, further comprising:
a first conductive mass located within the first hollowed out groove, and in a thickness direction of the capping structure, an orthographic projection of the first conductive mass on the first conductive layer is located outside an orthographic projection range of the fixed mass on the first conductive layer;
and the second bonding structure is arranged between the first conductive mass block and the second electrode, and the second electrode is electrically connected with the first conductive mass block through the second bonding structure.
11. The microelectromechanical component of claim 10, characterized in that,
the second bond structure includes stacked first and second bonds and a wall structure disposed around the first and second bonds;
the first bonding body and the second bonding body are made of metal materials, and the wall structure is made of semiconductor materials;
wherein there is a gap between the wall structure and the stacked first and second bond in an extension direction in which an inner diameter of the wall structure points to an outer diameter.
12. The microelectromechanical component of claim 10, characterized in that,
the first conductive mass block is strip-shaped and is arranged at one side edge of the fixed mass block.
13. The microelectromechanical component of claim 10, characterized in that,
the first conductive mass block is annular and is arranged around the periphery of the fixed mass block.
14. The microelectromechanical component of claim 1, characterized in that,
the second film layer is a conductive film layer.
15. A microelectromechanical component integrated with an inertial and pressure sensor, comprising:
the substrate is provided with a plurality of holes,
the device structure is positioned on one side of the substrate and comprises a movable mass block, a first anchor point for fixing the movable mass block and a fixed mass block, wherein the movable mass block is eccentrically arranged in a first direction, the fixed mass block is positioned on one side of the movable mass block, which is relatively small in mass, a first hollowed-out groove is formed in the movable mass block, the fixed mass block is positioned in the first hollowed-out groove, the fixed mass block comprises a first sub-mass block and a second sub-mass block, the first sub-mass block forms a first sub-electrode, and the second sub-mass block forms a second sub-electrode;
The device comprises a substrate, a device structure, a capping structure and a second dielectric layer, wherein the device structure is arranged on one side, away from the substrate, of the substrate;
wherein, in the thickness direction of the substrate, the orthographic projection of the first sub-mass on the first conductive layer is positioned within the orthographic projection range of the second groove on the first conductive layer, and the orthographic projection of the second sub-mass on the first conductive layer is positioned outside the orthographic projection range of the second groove on the first conductive layer; the first sub-electrode and the second electrode are projected and overlapped to form a pressure detection capacitor; the second sub-electrode overlaps with the second electrode projection to form a reference detection capacitance.
16. The microelectromechanical component of claim 15, characterized in that,
the first and second sub-masses have equal areas.
17. The microelectromechanical component of claim 16, further comprising:
a second conductive mass located within the first hollowed out groove, and in a thickness direction of the capping structure, an orthographic projection of the second conductive mass on the first conductive layer is located outside an orthographic projection range of the second groove on the first conductive layer;
and the third bonding structure is arranged between the second conductive mass block and the first conductive layer, and the second electrode is electrically connected with the second conductive mass block through the third bonding structure.
18. The microelectromechanical component of claim 17, characterized in that,
the third bond structure includes stacked first and second bonds and a wall structure disposed around the first and second bonds;
the first bonding body and the second bonding body are made of metal materials, and the wall structure is made of semiconductor materials;
wherein there is a gap between the wall structure and the stacked first and second bond in an extension direction in which an inner diameter of the wall structure points to an outer diameter.
19. The microelectromechanical component of claim 15, characterized in that,
the first conductive layer further includes an isolation structure penetrating through the first conductive layer in thickness to isolate the potential of the movable electrode region.
20. The microelectromechanical component of claim 15, further comprising:
the signal processing circuit chip is respectively and electrically connected with the pressure detection capacitor and the reference detection capacitor so as to receive and process signal output of the micro-electromechanical component corresponding to each working state;
and carrying out preset differential operation on the signal output values of the corresponding pressure detection capacitor and the reference detection capacitor based on the condition that the micro-electromechanical component is in each working state so as to obtain differential output corresponding to the micro-electromechanical component.
21. The microelectromechanical component of claim 15, characterized in that,
the second film layer is a conductive film layer.
22. A microelectromechanical component integrated with an inertial and pressure sensor, comprising:
the substrate is provided with a plurality of holes,
a device structure located on one side of the substrate, the device structure including a movable mass, a first anchor for fixing the movable mass, and a fixed mass, the movable mass being eccentrically disposed with respect to a first direction, the fixed mass being located on a relatively small side of the movable mass, a first hollowed-out groove being provided on the movable mass, the fixed mass being located in the first hollowed-out groove, the fixed mass including a third sub-mass and a fourth sub-mass, the third sub-mass constituting a third sub-electrode, the fourth sub-mass constituting a fourth sub-electrode;
The device comprises a substrate, a device structure, a capping structure and a third groove, wherein the device structure is arranged on one side, away from the substrate, of the substrate;
wherein in a thickness direction of the substrate, the third sub-electrode overlaps with the second electrode projection to constitute a first pressure detection capacitance, and the fourth sub-electrode overlaps with the second electrode projection to constitute a second pressure detection capacitance.
23. The microelectromechanical component of claim 22, characterized in that,
one electrode of the third sub-electrode and the fourth sub-electrode is electrically connected to positive electrode potential, and the other electrode is electrically connected to negative electrode potential; the second electrode is a floating potential;
The first pressure detection capacitor and the second pressure detection capacitor are connected in series.
24. The microelectromechanical component of claim 22, characterized in that,
the second film layer is a conductive film layer.
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| CN102183677A (en) * | 2011-03-15 | 2011-09-14 | 迈尔森电子（天津）有限公司 | Integrated inertial sensor and pressure sensor and forming method thereof |
| JP2012159417A (en) * | 2011-02-01 | 2012-08-23 | Toyota Central R&D Labs Inc | Displacement sensor, method for manufacturing the same, and semiconductor wafer for the same |
| US9550668B1 (en) * | 2015-08-25 | 2017-01-24 | Globalfoundries Singapore Pte. Ltd. | Integrated MEMS pressure sensor and MEMS inertial sensor |
| WO2022088831A1 (en) * | 2020-10-29 | 2022-05-05 | 华为技术有限公司 | Accelerometer, inertial measurement unit (imu) and electronic device |
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| JP2012159417A (en) * | 2011-02-01 | 2012-08-23 | Toyota Central R&D Labs Inc | Displacement sensor, method for manufacturing the same, and semiconductor wafer for the same |
| CN102183677A (en) * | 2011-03-15 | 2011-09-14 | 迈尔森电子（天津）有限公司 | Integrated inertial sensor and pressure sensor and forming method thereof |
| US9550668B1 (en) * | 2015-08-25 | 2017-01-24 | Globalfoundries Singapore Pte. Ltd. | Integrated MEMS pressure sensor and MEMS inertial sensor |
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