CN116367587A - Light emitting diode and preparation method thereof - Google Patents
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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Abstract
The invention provides a light-emitting diode and a preparation method thereof, and relates to the technical field of photoelectricity. The light-emitting diode comprises interdigital electrodes, wherein pits or protrusions are formed on the surfaces of the interdigital electrodes; the functional layer is formed on the surface of the interdigital electrode, and the thickness of the functional layer is smaller than the depth of the pit or the height of the protrusion; and a light-emitting layer formed on the surface of the functional layer. The light-emitting diode can solve the problem that the effective contact area between the functional layer and the light-emitting layer in the back contact type device structure is small, and effectively reduces the injection quantity limit of carriers from the functional layer to the light-emitting layer by the back contact type device structure, thereby improving the device efficiency. The invention also provides a preparation method of the light-emitting diode.
Description
Technical Field
The invention relates to the technical field of photoelectricity, in particular to a light-emitting diode and a preparation method thereof.
Background
A light-emitting diode (LED) is a commonly used light-emitting device that emits light by recombination of electrons and holes, and is widely used in various fields of modern society, such as lighting, flat panel display, and medical devices, because it can efficiently convert electric energy into light energy.
At present, light emitting diodes have various device configurations, and according to different division modes, the light emitting diodes can be divided into a top emitter device, a bottom emitter device and a double-sided emitter device, and also can be divided into a rigid device and a flexible device, and can be divided into a positive structure device and an inverted structure device, and also can be divided into a laminated device and a back contact device. The back contact type device is prepared by carrying out photoetching on electrodes in advance, depositing in a physical or chemical mode to form interdigital electrodes, and then depositing a functional layer material and a luminescent layer material on the interdigital electrodes. Compared with a laminated device, the back contact device can avoid damage to the light-emitting layer during deposition of the functional layer in the manufacturing process, and the structure of the back contact device can also avoid shielding of the functional layer to the light-emitting layer, so that the light-emitting quantity of the light-emitting layer is reduced, and adverse effects on the device performance are caused.
However, based on the device structure of the back contact device, under the same light emitting area, the contact area between the functional layer and the light emitting layer is reduced by 40-60% compared with the contact area between the functional layer and the light emitting layer in the stacked device, and the reduced effective contact area affects the injection amount of carriers from the functional layer to the light emitting layer, so that the light emitting efficiency of the device is reduced.
Disclosure of Invention
The invention aims to provide a light-emitting diode, which can solve the problem of small effective contact area between a functional layer and a light-emitting layer in a back contact type device structure, and effectively reduce the limit of the back contact type device structure on the injection amount of carriers from the functional layer to the light-emitting layer, thereby improving the device efficiency.
Another object of the present invention is to provide a method for manufacturing the above light emitting diode.
The invention solves the technical problems by adopting the following technical scheme:
a light emitting diode, comprising:
the surface of the interdigital electrode is provided with pits or bulges;
the functional layer is formed on the surface of the interdigital electrode, and the thickness of the functional layer is smaller than the depth of the pit or the height of the protrusion; and
and the light-emitting layer is formed on the surface of the functional layer.
Alternatively, in some embodiments of the invention, the depth of the pits or the height of the lands is 11 to 70nm.
Alternatively, in some embodiments of the invention, the depth of the pits or the height of the lands is 15 to 50nm.
Optionally, in some embodiments of the present invention, the functional layer is selected from one or more of a charge injection layer, a charge transport layer, a charge blocking layer.
Optionally, in some embodiments of the present invention, the interdigital electrode includes a first electrode and a second electrode forming an interdigital structure, and surfaces of the first electrode and the second electrode are formed with pits or protrusions;
the functional layer comprises a first functional layer and a second functional layer, the first functional layer is formed on the surface of the first electrode, the second functional layer is formed on the surface of the second electrode, and the thicknesses of the first functional layer and the second functional layer are smaller than the depth of the pit or the height of the protrusion;
the light emitting layer is formed on the surfaces of the first functional layer and the second functional layer and covers the interval area between the first functional layer and the second functional layer.
Optionally, in some embodiments of the present invention, the first electrode is a cathode, and a material of the cathode is selected from one or more of zinc, tin, titanium, aluminum, ITO, FTO; and/or
The second electrode is an anode, and the anode is made of one or more of copper, nickel, aluminum, chromium, platinum, ITO and FTO.
Optionally, in some embodiments of the invention, the light emitting layer is a quantum dot light emitting layer, the material of the quantum dot light emitting layer is selected from one or more of CdSe, cdS, znSe, znS, cdTe, znTe, cdZnS, cdZnSe, cdZnTe, znSeS, znSeTe, znTeS, cdSeS, cdSeTe, cdTeS, cdZnSeS, cdZnSeTe, cdZnSTe, cdSeSTe, znSeSTe, inP, gaP, gaAs, inAs, inAsP, gaAsP, inGaP, inGaAs, pbS, pbSe, pbTe, pbSeS, pbSeTe, cdZnSe/ZnS, cdZnSeS/ZnS, cdTe/ZnS, cdZnSe/ZnS, cdZnSeS/ZnS, cdTe/CdSe/CdS, cdSe/ZnS, inP/ZnS, inorganic perovskite type semiconductors, organic-inorganic hybrid perovskite type semiconductors; wherein the general formula of the inorganic perovskite semiconductor is AMX 3 Wherein A is Cs + M is selected from Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ X is selected from Cl - 、Br - 、I - One of the following; the general formula of the organic-inorganic hybrid perovskite type semiconductor is BMX 3 Wherein B is an organic amine cation and M is selected from Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ X is selected from Cl - 、Br - 、I - One of them.
Alternatively, in some embodiments of the invention, the material of the protrusions is the same as the material of the interdigitated electrodes.
In addition, the preparation method of the light-emitting diode comprises the following steps:
providing a substrate, an electrode material, a pit material for forming pits and an etching liquid for etching the pit material;
interdigital electrode formation: simultaneously depositing electrode materials and pit materials on a substrate to form a doped structure layer with an interdigital structure; etching pit materials in the doped structure layer by using etching liquid to form interdigital electrodes with pits;
functional layer formation: forming a functional layer on the interdigital electrode, wherein the thickness of the functional layer is smaller than the depth of the pit; and
and forming a light-emitting layer: a light emitting layer is deposited over the functional layer.
Alternatively, in some embodiments of the invention, the mass ratio of electrode material to pit material is 0.1-10:1.
Alternatively, in some embodiments of the present invention, the interdigitated electrodes comprise a first electrode and a second electrode, and the functional layer comprises a first functional layer and a second functional layer;
The interdigital electrode formation and the functional layer formation include a first electrode formation, a first functional layer formation, a second electrode formation, and a second functional layer formation, which are sequentially performed, and the steps performed include:
simultaneously depositing a material of the first electrode and a pit material on the substrate to form a first doped structure layer corresponding to the first electrode in the interdigital structure; etching pit materials in the first doped structure layer by using etching liquid to form a first electrode with pits;
forming a first functional layer on the first electrode, wherein the thickness of the first functional layer is smaller than the depth of the pit;
shielding the first functional layer, and simultaneously depositing a material of the second electrode and a pit material on the substrate to form a second doped structure layer corresponding to the second electrode in the interdigital structure; etching pit materials in the second doped structure layer by using etching liquid to form a second electrode with pits;
and forming a second functional layer on the second electrode, wherein the thickness of the second functional layer is smaller than the depth of the pit.
Alternatively, in some embodiments of the present invention, in the formation of the functional layer, the formation of the functional layer on the interdigital electrode is achieved by oxidizing the interdigital electrode.
Alternatively, in some embodiments of the invention, the functional layer has a thickness of 9 to 30nm.
Optionally, in some embodiments of the invention, the electrode material is selected from one or more of a conductive metal, a conductive metal oxide; wherein the conductive metal is selected from one or more of zinc, tin, copper, chromium, platinum, nickel, titanium and aluminum, and the conductive metal oxide is selected from one or more of ITO and FTO; and/or
The pit material is one or more of gold, aluminum, copper and palladium; and/or
The etching solution is selected from AU etching 200, CR etching 200/210, CU etching 200 UBM, techniEth TM TC, techniEtch Al 80.
In addition, the preparation method of the light-emitting diode comprises the following steps:
providing a substrate, an electrode material, and a bump material for forming bumps;
interdigital electrode formation: depositing electrode material on a substrate to form a base electrode with an interdigital structure; depositing a convex material on the surface of the base electrode to form an interdigital electrode with a convex;
functional layer formation: forming a functional layer on the interdigital electrode, wherein the thickness of the functional layer is smaller than the height of the bulge; and
and forming a light-emitting layer: a light emitting layer is deposited over the functional layer.
Alternatively, in some embodiments of the present invention, the interdigital electrode includes a plurality of electrode units constituting an interdigital structure, each electrode unit having a protrusion formed thereon.
Alternatively, in some embodiments of the invention, the height of each protrusion is less than the spacing between adjacent electrode units.
Alternatively, in some embodiments of the invention, the mass ratio of electrode material to bump material is 100:0.1-5.
Alternatively, in some embodiments of the present invention, the bump material is the same as the electrode material, and the electrode material is selected from one or more of a conductive metal, a conductive metal oxide; wherein the conductive metal is selected from one or more of zinc, tin, copper, chromium, platinum, nickel, titanium and aluminum, and the conductive metal oxide is selected from one or more of ITO and FTO.
Compared with the prior art, the invention has the following beneficial effects: according to the technical scheme, the specific surface area is increased through the pits or the protrusions on the surface of the interdigital electrode, and meanwhile, the thickness of the functional layer formed on the surface of the interdigital electrode is smaller than the depth of the pits or the height of the protrusions, so that the increased specific surface area is kept, the effective contact area between the functional layer and the light-emitting layer is increased after the light-emitting layer is formed on the surface of the functional layer, the injection amount of carriers from the functional layer to the light-emitting layer is improved, and therefore the performance of the device is also improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a doped structure layer according to a first embodiment of the present invention;
fig. 2 is a schematic structural diagram of an interdigital electrode with pits according to a first embodiment of the present invention;
FIG. 3 is a schematic diagram of a functional layer formed on a surface of an interdigital electrode according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a light emitting diode according to a first embodiment of the present invention;
fig. 5 is a schematic diagram of a first doped structure layer according to a second embodiment of the present invention;
fig. 6 is a schematic structural diagram of a first electrode according to a second embodiment of the present invention;
fig. 7 is a schematic structural diagram of a first functional layer formed on a surface of a first electrode and a second functional layer formed on a surface of a second electrode according to a second embodiment of the present invention;
fig. 8 is a schematic structural diagram of a light emitting diode according to a second embodiment of the present invention;
FIG. 9 is a graph of blue QLED device performance (voltage-luminance) data comparison;
fig. 10 is a graph of data comparison of blue QLED device performance (luminance-external quantum efficiency).
Wherein the reference numerals are summarized as follows:
a first electrode 201; a second electrode 202; a first functional layer 203; a second functional layer 204.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention.
The technical scheme provided by the invention will be described in detail below. The following description of the embodiments is not intended to limit the preferred embodiments. In addition, in the description of the present invention, the term "comprising" means "including but not limited to". The terms "first," "second," and the like, are used merely as labels, and do not impose numerical requirements or on the order of establishment. Various embodiments of the invention may exist in a range of forms; it should be understood that the description in a range format is merely for convenience and brevity and should not be construed as a rigid limitation on the scope of the invention; it is therefore to be understood that the range description has specifically disclosed all possible sub-ranges and individual values within that range.
An embodiment of the present invention provides a light emitting diode including:
the surface of the interdigital electrode is provided with pits or bulges;
the functional layer is formed on the surface of the interdigital electrode, and the thickness of the functional layer is smaller than the depth of the pit or the height of the protrusion; and
and the light-emitting layer is formed on the surface of the functional layer.
The interdigital electrode, that is, the electrode having an interdigital structure, is a structure having a periodic pattern in a plane such as a finger or comb, and the structure having the above-mentioned structure may be referred to as an interdigital structure, and the reference of the interdigital structure does not limit whether the pattern is symmetrical, whether the number of periods is the same, or other structural parts of the component having the interdigital structure. The pits or projections are only areas with improved areas for increasing the specific surface area of the interdigital electrode, and the pits may be grooves, concave spherical surfaces, irregular structures, or the projections may be projections, cones, or the like, without being limited to the shape or configuration.
The "surface of the interdigital electrode" referred to in the light emitting diode structure also includes the front surface and the side surface of the interdigital electrode, the front surface of the functional layer is the surface close to the light emitting layer, and the front surface of the light emitting layer is the surface emitting light. The thickness of the functional layer is smaller than the depth of the pit or the height of the bump, both on the front side and on the side.
In some embodiments, the depth of the pits or the height of the lands is 11 to 70nm, preferably 15 to 50nm.
In some embodiments, the functional layer is selected from one or more of a charge injection layer, a charge transport layer, a charge blocking layer. When the functional layer is a single layer, the thickness of the single layer is smaller than the depth of the pit or the height of the protrusion; when the functional layer is a multilayer, the sum of thicknesses of the multilayer structure is smaller than the depth of the pit or the height of the protrusion.
In some embodiments, the interdigital electrode comprises a first electrode and a second electrode forming an interdigital structure, and the surfaces of the first electrode and the second electrode are both formed with pits or projections;
the functional layer comprises a first functional layer and a second functional layer, the first functional layer is formed on the surface of the first electrode, the second functional layer is formed on the surface of the second electrode, and the thicknesses of the first functional layer and the second functional layer are smaller than the depth of the pit or the height of the protrusion;
the light emitting layer is formed on the surfaces of the first functional layer and the second functional layer and covers the interval area between the first functional layer and the second functional layer.
Further, the first electrode may be a cathode, and the material of the cathode is one or more selected from zinc, tin, titanium, aluminum, ITO, and FTO; correspondingly, the second electrode is an anode, and the anode is made of one or more of copper, nickel, aluminum, chromium, platinum, ITO and FTO. Of course, in some embodiments, the first electrode may also be an anode, and the second electrode may be a cathode.
The light emitting diode provided by the invention can be of different types, such as three-layer devices and multi-layer devices; also for example, organic Light-Emitting Diode (OLED), quantum dot Light-Emitting Diode (Quantum Dot Light Emitting Diodes, QLED). The technical scheme is particularly suitable for QLEDs, and the quantum dot luminescent layer is formed on the surface of the functional layer, so that the damage to the quantum dot luminescent layer caused by the deposition of the functional layer material can be avoided, the shielding of the functional layer to the fluorescence of the quantum dot is avoided, the light emitting efficiency of the device is improved, and a larger effective contact area is also provided between the quantum dot luminescent layer and the functional layer, so that the injection quantity of carriers is increased, and the overall performance of the device is improved.
When the light emitting layer is a quantum dot light emitting layer, the material of the quantum dot light emitting layer may be selected from one or more of CdSe, cdS, znSe, znS, cdTe, znTe, cdZnS, cdZnSe, cdZnTe, znSeS, znSeTe, znTeS, cdSeS, cdSeTe, cdTeS, cdZnSeS, cdZnSeTe, cdZnSTe, cdSeSTe, znSeSTe, inP, gaP, gaAs, inAs, inAsP, gaAsP, inGaP, inGaAs, pbS, pbSe, pbTe, pbSeS, pbSeTe, cdZnSe/ZnS, cdZnSeS/ZnS, cdTe/ZnS, cdZnSe/ZnS, cdZnSeS/ZnS, cdTe/CdSe, cdTe/ZnTe, cdSe/CdS, cdSe/ZnS, inP/ZnS, inorganic perovskite type semiconductors, organic-inorganic hybrid perovskite type semiconductors; wherein the general formula of the inorganic perovskite semiconductor is AMX 3 Wherein A is Cs + M is selected from Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ X is selected from Cl - 、Br - 、I - One of the following; the general formula of the organic-inorganic hybrid perovskite type semiconductor is BMX 3 Wherein B is an organic amine cation and M is selected from Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2 + X is selected from Cl - 、Br - 、I - One of them.
In some embodiments, the material of the protrusions is the same as the material of the interdigitated electrodes. Thus, adverse effects on device performance can be avoided.
In some embodiments, the spacing between the electrode units constituting the interdigital structure is 10 to 1000nm, and the width of the electrode units may be 10 to 1000nm.
The embodiment of the invention also provides a preparation method of the light-emitting diode, which comprises the following steps:
providing a substrate, an electrode material, a pit material for forming pits and an etching liquid for etching the pit material;
interdigital electrode formation: simultaneously depositing electrode materials and pit materials on a substrate to form a doped structure layer with an interdigital structure; etching pit materials in the doped structure layer by using etching liquid to form interdigital electrodes with pits;
functional layer formation: forming a functional layer on the interdigital electrode, wherein the thickness of the functional layer is smaller than the depth of the pit; and
and forming a light-emitting layer: a light emitting layer is deposited over the functional layer.
The term "formation of an interdigital electrode" refers to formation of an interdigital electrode having a pit.
Further, in the step of forming the interdigital electrode, before the electrode material and the pit material are simultaneously deposited on the substrate, in order to increase the binding force between the substrate and the interdigital electrode, after single-step photoetching is performed on the substrate, the photoresist is used as an evaporation mask to evaporate the adsorption layer material; after the evaporation of the adsorption layer is completed, the electrode material can be utilized to evaporate the conductive electrode according to an interdigital structure, and pit materials are selected for co-evaporation while evaporation is carried out, so that a doped structure layer is formed; then removing the photoresist by using the etched solution; and selectively removing pit materials by using etching liquid to form the interdigital electrode with pits.
In some embodiments, the material of the adsorption layer may be one or more selected from titanium and chromium, and the thickness of the adsorption layer may be 5-10 nm.
The interdigital electrode comprises a cathode and an anode, and in some embodiments, the thickness of the interdigital electrode can be 60-500 nm, the cathode and the anode can be made of the same electrode material, and the electrode material can be one or more selected from conductive metals and conductive metal oxides; wherein the conductive metal may be selected from but not limited to zinc, tin, copper, chromium, platinum, nickel, titanium, aluminum, and the conductive metal oxide may be selected from but not limited to ITO, FTO. When the cathode and the anode select the same electrode material, the electrode material and the pit material can be deposited together, a doped structure layer corresponding to the cathode and the anode is formed at the same time, and then the pit material is removed by using etching liquid.
In some embodiments, the etching liquid may be selected corresponding to the pit material used to etch the pit material with the etching liquid.
In some embodiments, the mass ratio of electrode material to pit material is 0.1-10:1. The appropriate dosage ratio can define the number of pits on the formed interdigitated electrodes.
In some embodiments, in the steps of forming the functional layer and forming the light emitting layer, the formation of the layer structure may be achieved by technical means well known in the art, including using chemical or physical methods. The chemical method is, for example, chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, or coprecipitation. The physical method may be a physical plating method or a solution processing method. Specifically, the physical plating method is, for example, a thermal evaporation plating method, an electron beam evaporation plating method, a magnetron sputtering method, a multi-arc ion plating method, a physical vapor deposition method, an atomic layer deposition method, a pulse laser deposition method; examples of the solution processing method include spin coating, printing, inkjet printing, knife coating, printing, dip-coating, dipping, spraying, roll coating, casting, slit coating, and bar coating. Specific treatment methods and treatment conditions can be referred to as common methods in the art, and will not be described herein.
Preferably, the functional layer is formed by electrochemical deposition, and the light emitting layer is formed by solution deposition. Because the electrode is an interdigital electrode with pits, and the thickness of the functional layer formed on the surface of the interdigital electrode is smaller than the depth of the pits, when the luminescent layer is formed by a solution method, the luminescent layer material fills the pits formed by the functional layer based on the pit structures of the interdigital electrode, so that the effective contact area between the luminescent layer and the functional layer is increased, and the carrier injection amount of the device is improved.
In some embodiments, the functional layer is a charge transport layer that includes an electron transport layer and a hole transport layer. The material of the electron transport layer may be selected from, but not limited to, znO and TiO 2 、SnO 2 、Ta 2 O 3 、ZrO 2 NiO, tiLiO, znAlO, znMgO, znSnO, znLiO, inSnO the material of the hole transport layer may be selected from, but is not limited to NiO x 、PEDOT:PSS、CuSCN、CuO x 。
In some embodiments, by immersing the interdigitated electrodes with pits in an electrochemical reaction solution to form a functional layer on the surface of the interdigitated electrodes, but under the influence of the structure of the interdigitated electrodes, the spacing between the cathode and the anode of the interdigitated electrodes is small, so that when a voltage is applied to the cathode or the anode of the interdigitated electrodes to deposit a charge transport layer, adjacent electrodes to which no voltage is applied are disturbed and are at the same potential, thus easily causing a small amount of material of the deposited charge transport layer to be deposited on the surface of the adjacent electrodes or the functional layer, which negatively affects the device performance.
For the reasons described above, in some embodiments, the interdigitated electrodes include a first electrode and a second electrode, and the functional layer includes a first functional layer and a second functional layer;
the interdigital electrode formation and the functional layer formation include a first electrode formation, a first functional layer formation, a second electrode formation, and a second functional layer formation, which are sequentially performed, and the steps performed include:
simultaneously depositing a material of the first electrode and a pit material on the substrate to form a first doped structure layer corresponding to the first electrode in the interdigital structure; etching pit materials in the first doped structure layer by using etching liquid to form a first electrode with pits;
forming a first functional layer on the first electrode, wherein the thickness of the first functional layer is smaller than the depth of the pit;
shielding the first functional layer, and simultaneously depositing a material of the second electrode and a pit material on the substrate to form a second doped structure layer corresponding to the second electrode in the interdigital structure; etching pit materials in the second doped structure layer by using etching liquid to form a second electrode with pits;
and forming a second functional layer on the second electrode, wherein the thickness of the second functional layer is smaller than the depth of the pit.
After the preparation of the first electrode and the first functional layer formed on the surface of the first electrode is completed, the mutual interference of material deposition of different structural layers is avoided by shielding the first functional layer and continuing to prepare the second electrode and the second functional layer, and the method can be regarded as a method combining two-step photoetching and electrochemical deposition. Further, performing first-step photoetching, firstly manufacturing a first electrode, removing photoresist, then depositing a first functional layer on the first electrode through electrochemical deposition, performing second-step photoetching on the first electrode, manufacturing a second electrode, performing electrochemical deposition under the condition that the photoresist is not removed, and depositing a second functional layer on the surface of the second electrode. In this case, since the photoresist used in the second photolithography covers the first functional layer (since the first functional layer is formed on the surface of the first electrode, the first electrode is also indirectly covered by the shielding), both the first electrode and the first functional layer are shielded, thus avoiding the adverse effect of the material of the second functional layer on the first functional layer, and improving the device performance.
The first electrode may be a cathode or an anode, and the second electrode may be an anode or a cathode, respectively. When the functional layer is a charge transport layer, in the preparation of combining two-step photolithography with electrochemical deposition, the cathode and the electron transport layer formed on the surface of the cathode may be prepared first, or the anode and the hole transport layer formed on the surface of the anode may be prepared first.
Furthermore, in order to simplify the process and reduce the process difficulty, in the formation of the functional layer, the formation of the functional layer on the interdigital electrode is realized by oxidizing the interdigital electrode.
In some embodiments, the interdigital electrode comprises a cathode and an anode which can be made of different electrode materials, so that the cathode and the anode can be respectively prepared by a two-step photoetching mode. Wherein, the cathode material can be titanium, zinc, tin, etc., and the anode material can be nickel, copper, etc. In the oxide interdigital electrode scheme, further, after evaporating the cathode (simultaneously depositing cathode material and pit material) and anode (simultaneously depositing anode material and pit material) respectively, and etching pit material with etching solution to form interdigital electrode with pit, the electrode can be heatedThe interdigital electrodes are oxidized to coat the surfaces of the interdigital electrodes (cathode and anode) with corresponding metal oxides, thereby forming functional layers (electron transport layer and hole transport layer). For example, formation of TiO by oxidation of Ti (cathode material) 2 (electron transport layer material), ni (anode material) is oxidized to form NiO x (hole transport layer material).
In some embodiments, the functional layer may have a thickness of 9 to 30nm. The choice of the functional layer thickness and pit depth should always follow the principle that the functional layer thickness is smaller than the pit depth.
The electrode material may be selected from one or more of a conductive metal, a conductive metal oxide; wherein the conductive metal is selected from one or more of zinc, tin, copper, chromium, platinum, nickel, titanium and aluminum, and the conductive metal oxide is selected from one or more of ITO and FTO. The pit material may be selected from one or more of gold, aluminum, copper, palladium. The etching solution can be selected from the products of microchemical company with the model numbers of AU etching 200, CR etching 200/210, CU etching 200 UBM, techniEntch TM One or more of etching solutions of TC and TechniEthch Al 80. AU etch 200 may be used to etch gold-containing material, CR etch 200/210 may be used to etch chromium-containing material, CU etch 200 UBM may be used to etch copper-containing material, technifetch TM TC can be used to etch titanium-containing materials and TechniEth Al80 can be used to etch aluminum-containing materials.
The embodiment of the invention also provides a preparation method of the light-emitting diode, which comprises the following steps:
Providing a substrate, an electrode material, and a bump material for forming bumps;
interdigital electrode formation: depositing electrode material on a substrate to form a base electrode with an interdigital structure; depositing a convex material on the surface of the base electrode to form an interdigital electrode with a convex;
functional layer formation: forming a functional layer on the interdigital electrode, wherein the thickness of the functional layer is smaller than the height of the bulge; and
and forming a light-emitting layer: a light emitting layer is deposited over the functional layer.
In the above another method for manufacturing a light emitting diode, the electrode material and the bump material are deposited sequentially, so that the bump material can form bumps on the surface of the base electrode formed by the electrode material, thereby increasing the specific surface area of the interdigital electrode.
In some embodiments, the interdigital electrode includes a plurality of electrode units constituting an interdigital structure, each electrode unit having a bump formed thereon. In this way, an increase in specific surface area can be sufficiently achieved.
In some embodiments, the height of each protrusion is less than the spacing between adjacent electrode units. In this way, adverse effects of the protrusions on the electrode unit can be avoided. In the case of the bump structure, the interval between the electrode units may be 12 to 1000nm.
In some embodiments, the mass ratio of electrode material to bump material is 100:0.1-5.
In some embodiments, the mass ratio of cathode material to protruding material on the cathode is 100:0.1-5 and the mass ratio of anode material to protruding material on the anode is 100:0.1-5.
The bump material is the same as the electrode material, and the electrode material is one or more selected from conductive metal and conductive metal oxide; wherein the conductive metal is selected from one or more of zinc, tin, copper, chromium, platinum, nickel, titanium and aluminum, and the conductive metal oxide is selected from one or more of ITO and FTO. Thus, the bump material may be selected with reference to the electrode material. The deposition of the bump material may be achieved by means of electrochemical deposition. The substrate, the functional layer, the light-emitting layer, etc. may be selected and prepared according to the content mentioned in the preparation method of the first light-emitting diode, and will not be described herein.
Example 1
The present embodiment provides a light emitting diode, including:
an interdigital electrode 101, wherein the surface of the interdigital electrode 101 is provided with a pit 102;
a functional layer 103, the functional layer 103 being formed on the surface of the interdigital electrode 101; and
a light-emitting layer 104, the light-emitting layer 104 being formed on the surface of the functional layer 103.
In this embodiment, the depth of the pit 102 is 30nm, and the thickness of the functional layer 103 is 15nm. In this embodiment, the pits may also be considered as hemispherical structures with a radius of 30 nm.
The embodiment also provides a preparation method of the light-emitting diode, which comprises the following steps:
step S1: printing 3um thick AZ1512 photoresist on a glass substrate in a class 100 yellow light clean room, and then carrying out heat treatment at 110 ℃ for 2 minutes;
step S2: exposing under a UV lamp by using a photoetching mask, wherein the exposure time is 5 seconds;
step S3: developing the exposed sample in AZ726 developer mixed with water (the volume ratio of the developer to the water is 3:1), wherein the development time is 25 seconds;
step S4: using photoresist as evaporation mask, vacuum degree is 3×10 -4 Forming a cathode and an anode by electron beam evaporation of Al under Pa, wherein the evaporation speed of Al is 1 angstrom/second, the evaporation speed of Al is 0.5 angstrom/second, the evaporation time is 533 seconds, and the evaporation is completed to obtain two doped structure layers respectively corresponding to the cathode and the anode, and the structure of the doped structure layers is shown in figure 1, wherein the doped structure layers are formed by pit material gold and electrode material Al together;
wherein the thickness of the cathode and the anode is 80nm;
Step S5: removing photoresist by ultrasonic in acetone;
step S6: placing the sample in an AU etch 200 etching solution, soaking for 20 seconds at 20 ℃, and then washing the sample cleanly with clean water to obtain an interdigital electrode 101 with a pit 102 (comprising a cathode with the pit 102 and an anode with the pit 102), see FIG. 2;
step S7: the interdigital electrode 101 is placed in Zn (NO 3 ) 2 In the solution (130 mM concentration, 90 ℃ C.), a voltage of-1.3V is applied to the cathode for 120 seconds, and the solution is rinsed with deionized water after stopping the application of the voltage, thereby obtaining a functional layer 103, namely an electron transport layer, see FIG. 3;
step S8: placing the cleaned sample in the previous step into 0.1M sodium polystyrene sulfonate (PSSNa) and 0.015M 3, 4-Ethylenedioxythiophene (EDOT) water solution, applying 1.1V voltage on the anode for 120 seconds, and washing with deionized water after stopping applying the voltage to obtain a functional layer 103-a hole transport layer;
step S9: printing CdZnSe with the thickness of 25nm on the electron transport layer and the hole transport layer, and obtaining the light-emitting diode after the preparation, see FIG. 4;
step S10: JVL data of the device was tested to determine the electrical performance of the device.
Example two
The present embodiment provides a light emitting diode, including:
The interdigital electrode 101, the interdigital electrode 101 comprises a first electrode 201 and a second electrode 202, and the surfaces of the first electrode 201 and the second electrode 202 are provided with pits 102;
a functional layer 103, the functional layer 103 including a first functional layer 203 and a second functional layer 204, the first functional layer 203 and the second functional layer 204 being formed on surfaces of the first electrode 201 and the second electrode 202, respectively; and
a light-emitting layer 104, the light-emitting layer 104 being formed on the surface of the functional layer 103.
In this example, the depth of the pits was 30nm and the thickness of the functional layer was 15nm. In this embodiment, the pits may also be considered as hemispherical structures with a radius of 30 nm.
The embodiment also provides a preparation method of the light-emitting diode, which comprises the following steps:
step S1: printing 3um thick AZ1512 photoresist on a glass substrate in a class 100 yellow light clean room, and then carrying out heat treatment at 110 ℃ for 2 minutes;
step S2: exposing under a UV lamp by using a photoetching mask, wherein the exposure time is 5 seconds;
step S3: developing the exposed sample in AZ726 developer mixed with water (the volume ratio of the developer to the water is 3:1), wherein the development time is 25 seconds;
step S4: using photoresist as evaporation mask, vacuum degree is 3×10 -4 Forming a cathode by electron beam evaporation of Al under Pa, wherein the Al evaporation rate is 1 angstrom/s, and the gold plating rate is 0.5 angstrom/s, and the time is 533 seconds, and the deposition is completed to obtain the doped material The impurity structure layer, see fig. 5, it can be seen in fig. 5 that the first doped structure layer has a structure formed by pit material gold and electrode material Al together; wherein the thickness of the cathode is 80nm;
step S5: removing photoresist by ultrasonic in acetone;
step S6: placing the sample in an AU etch 200 etching solution, soaking for 20 seconds at 20 ℃, and then washing the sample cleanly with clean water to obtain a first electrode 201 with pits, see FIG. 6;
step S7: the first electrode 201 is placed in Zn (NO 3 ) 2 In the solution (130 mM concentration, 90 ℃ C.), a voltage of-1.3V is applied to the first electrode 201 for 120 seconds, and after stopping the application of the voltage, the solution is rinsed with deionized water to obtain a first functional layer 203, an electron transport layer, see FIG. 7;
step S8: repeating the steps S1-S3, and preparing an anode and a corresponding doped structure layer by taking the photoresist as an evaporation mask again in the same manner and parameters as those of the step S4; continuing to prepare the second electrode 202 with pits in accordance with the manner and parameters of step S6 without removing the photoresist (without repeating step S5);
step S9: placing the second electrode 202 together with the unremoved photoresist in 0.1M sodium polystyrene sulfonate (PSSNa) and 0.015M 3, 4-Ethylenedioxythiophene (EDOT) water solution, applying a voltage of 1.1V to the second electrode 202 for 120 seconds, and washing with deionized water after stopping applying the voltage to obtain a second functional layer 204, namely a hole transport layer, see FIG. 7; in this process, since the first electrode 201 is covered under the electron transport layer, the unremoved photoresist, it is protected from the electrochemical deposition;
Step S10: ultrasonically removing the unremoved photoresist mentioned in step 9 in acetone;
step S11: spin-coating a CdZnSe quantum dot solution (20 mg/mL) on the electron transport layer and the hole transport layer to prepare a light emitting layer 104 at a rotation speed of 2000rpm for 30 seconds, and obtaining a light emitting diode after the preparation is completed, see fig. 8;
step S12: JVL data of the device was tested to determine the electrical performance of the device.
Example III
The present embodiment provides a light emitting diode, including:
the surface of the interdigital electrode is provided with pits;
the functional layer is formed on the surface of the interdigital electrode; and
and the light-emitting layer is formed on the surface of the functional layer.
In this example, the depth of the pits was 30nm and the thickness of the functional layer was 15nm. In this embodiment, the pits may also be considered as hemispherical structures with a radius of 30 nm.
The embodiment also provides a preparation method of the light-emitting diode, which comprises the following steps:
step S1: printing 3um thick AZ1512 photoresist on a glass substrate in a class 100 yellow light clean room, and then carrying out heat treatment at 110 ℃ for 2 minutes;
step S2: exposing under a UV lamp by using a photoetching mask, wherein the exposure time is 5 seconds;
step S3: developing the exposed sample in AZ726 developer mixed with water (the volume ratio of the developer to the water is 3:1), wherein the development time is 25 seconds;
Step S4: using photoresist as evaporation mask, vacuum degree is 3×10 -4 Forming a cathode by electron beam evaporation of Ti under Pa, wherein the evaporation speed of Ti is 1 angstrom/second, and simultaneously, the evaporation speed of Ti is 0.5 angstrom/second, and the time is 533 seconds, and the evaporation is completed to obtain a doped structure layer; wherein the thickness of the cathode is 80nm;
step S5: removing photoresist by ultrasonic in acetone;
step S6: repeating the steps S1-S3, and preparing an anode and a corresponding doped structure layer by taking the photoresist as an evaporation mask again in the same manner and parameters as those of the step S4; wherein, the anode is made of Ni;
step S7: ultrasonically removing the photoresist coated in the step 6 in acetone;
step S8: placing the sample in AU etch 200 etching solution, soaking at 20deg.C for 20 s, and washing the sample with clear water to obtain interdigital electrode (including cathode with pit and anode with pit) with pit;
step S9: placing the interdigital electrode in the step S8 on a hot table, heating for 20 minutes at 300 ℃, and forming an electron transport layer and a hole transport layer respectively by utilizing oxidation of a Ti cathode and a Ni anode;
step S10: spin-coating CdZnSe quantum dot solution (20 mg/mL) on the electron transport layer and the hole transport layer, and rotating at 2000rpm for 30 seconds to obtain a light-emitting diode;
Step S10: JVL data of the device was tested to determine the electrical performance of the device.
Example IV
The present embodiment provides a light emitting diode, including:
the surface of the interdigital electrode is provided with pits;
the functional layer is formed on the surface of the interdigital electrode; and
and the light-emitting layer is formed on the surface of the functional layer.
In this example, the depth of the pits was 20nm and the thickness of the functional layer was 10nm.
The embodiment also provides a preparation method of the light-emitting diode, which comprises the following steps:
step S1: spin-coating AZ1512 photoresist on a glass substrate in a class 100 yellow light clean room at a rotating speed of 3000 for 30 seconds, and then performing heat treatment at 110 ℃ for 2 minutes;
step S2: exposing under a UV lamp by using a photoetching mask, wherein the exposure time is 6 seconds;
step S3: developing the exposed sample in AZ726 developer mixed with water (the volume ratio of the developer to the water is 2.5:1), wherein the development time is 20 seconds;
step S4: using photoresist as evaporation mask, vacuum degree is 3×10 -4 Forming a cathode and an anode by electron beam evaporation of Cr under the condition of Pa, and respectively depositing a convex material on the surfaces of the two basic electrodes to form interdigital electrodes with projections; wherein the bump material is Cr, and the mass ratio of the bump material to the cathode material on the cathode 1:100, the mass ratio of the convex material on the anode to the anode material is 1:100;
step S5: removing photoresist by ultrasonic in acetone;
step S6: placing the interdigital electrode on Zn (NO) 3 ) 2 Applying a voltage of-1.3V to the cathode for 110 seconds in the solution (the concentration is 120mM, the temperature is 85 ℃), and after stopping applying the voltage, washing the cathode with deionized water to obtain an electron transport layer;
step S7: placing the cleaned sample in the previous step into 0.1M sodium polystyrene sulfonate (PSSNa) and 0.015M 3, 4-Ethylenedioxythiophene (EDOT) water solution, applying 1.1V voltage on the anode for 110 seconds, and washing with deionized water after stopping applying the voltage to obtain a hole transport layer;
step S8: and spinning CdTe/ZnS quantum dot solution (20 mg/mL) on the electron transport layer and the hole transport layer, and obtaining the light-emitting diode at 2200rpm for 25 seconds.
Comparative example
The present comparative example provides a conventional back contact device in which the interdigital electrode in the structure is a conventional electrode having a periodic pattern of fingers or combs, without pits or bumps, and the thicknesses of the electrode, the functional layer, and the light-emitting layer are the same as those of the functional layer and the light-emitting layer in the first embodiment, and the materials used for the respective structural layers are also the same as those used for the respective structural layers in the first embodiment. The conventional back contact device provided in this comparative example was prepared as follows:
Step S1: printing 3um thick AZ1512 photoresist on a glass substrate in a class 100 yellow light clean room, and then carrying out heat treatment at 110 ℃ for 2 minutes;
step S2: exposing under a UV lamp by using a photoetching mask, wherein the exposure time is 5 seconds;
step S3: developing the exposed sample in AZ726 developer mixed with water (the volume ratio of the developer to the water is 3:1), wherein the development time is 25 seconds;
step S4: using photoresist as evaporation mask, vacuum degree is 3×10 -4 Forming a cathode and an anode by electron beam evaporation of Al under Pa, the Al evaporation rate being1 angstrom/second for 800 seconds, the thickness of the cathode and the anode are 80nm;
step S5: removing photoresist by ultrasonic in acetone;
step S6: the sample was placed in Zn (NO 3 ) 2 Applying a voltage of-1.3V to the cathode for 120 seconds in the solution (the concentration is 130mM and the temperature is 90 ℃), and washing with deionized water after stopping applying the voltage to obtain an electron transport layer;
step S7: placing the cleaned sample in the previous step into 0.1M sodium polystyrene sulfonate (PSSNa) and 0.015M 3, 4-Ethylenedioxythiophene (EDOT) water solution, applying 1.1V voltage on the anode for 120 seconds, and washing with deionized water after stopping applying the voltage to obtain a hole transport layer;
Step S8: spin-coating CdZnSe quantum dot solution (20 mg/mL) on the electron transport layer and the hole transport layer, and rotating at 2000rpm for 30 seconds to obtain a back contact device;
step S9: JVL data of the device was tested to determine the electrical performance of the device.
To verify the device performance of the light emitting diode provided in the embodiment of the present invention, the voltage-luminance performance test and the luminance-external quantum efficiency performance test were performed on the devices provided in the first to third embodiments and the comparative example, respectively, and the test results are shown in fig. 9 and 10, respectively, wherein a to d represent the test result curves of the devices provided in the first, second, third and comparative examples, respectively. As can be seen from fig. 9, the device provided by the embodiment of the present invention has higher brightness at the same voltage; as can be seen from fig. 10, the external quantum efficiency of the device provided by the embodiment of the present invention is higher under the same brightness, and thus it can be seen that the photoelectric performance of the device provided by the embodiment of the present invention is better.
The foregoing has outlined the detailed description of the embodiments of the present invention, and the detailed description of the principles and embodiments of the present invention is provided herein by way of example only to facilitate the understanding of the method and core concepts of the present invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present invention, the present description should not be construed as limiting the present invention.
Claims (19)
1. A light emitting diode, comprising:
the surface of the interdigital electrode is provided with pits or protrusions;
the functional layer is formed on the surface of the interdigital electrode, and the thickness of the functional layer is smaller than the depth of the pit or the height of the protrusion; and
and the light-emitting layer is formed on the surface of the functional layer.
2. The light-emitting diode according to claim 1, wherein a depth of the pit or a height of the protrusion is 11 to 70nm.
3. The light-emitting diode according to claim 1 or 2, wherein the depth of the pit or the height of the bump is 15 to 50nm.
4. The light emitting diode of claim 1, wherein the functional layer is selected from one or more of a charge injection layer, a charge transport layer, and a charge blocking layer.
5. The light-emitting diode according to claim 1, wherein the interdigital electrode comprises a first electrode and a second electrode which form an interdigital structure, and the surfaces of the first electrode and the second electrode are each formed with a pit or a protrusion;
the functional layers comprise a first functional layer and a second functional layer, the first functional layer is formed on the surface of the first electrode, the second functional layer is formed on the surface of the second electrode, and the thicknesses of the first functional layer and the second functional layer are smaller than the depth of the pit or the height of the protrusion;
The light emitting layer is formed on the surfaces of the first functional layer and the second functional layer and covers a spacing region between the first functional layer and the second functional layer.
6. The light emitting diode of claim 5, wherein the first electrode is a cathode, and wherein the material of the cathode is one or more selected from zinc, tin, titanium, aluminum, ITO, FTO; and/or
The second electrode is an anode, and the anode is made of one or more materials selected from copper, nickel, aluminum, chromium, platinum, ITO and FTO.
7. The light emitting diode of claim 1, wherein the light emitting layer is a quantum dot light emitting layer, and the material of the quantum dot light emitting layer is selected from one or more of CdSe, cdS, znSe, znS, cdTe, znTe, cdZnS, cdZnSe, cdZnTe, znSeS, znSeTe, znTeS, cdSeS, cdSeTe, cdTeS, cdZnSeS, cdZnSeTe, cdZnSTe, cdSeSTe, znSeSTe, inP, gaP, gaAs, inAs, inAsP, gaAsP, inGaP, inGaAs, pbS, pbSe, pbTe, pbSeS, pbSeTe, cdZnSe/ZnS, cdZnSeS/ZnS, cdTe/ZnS, cdZnSe/ZnS, cdZnSeS/ZnS, cdTe/CdSe, cdTe/ZnTe, cdSe/CdS, cdSe/ZnS, inP/ZnS, inorganic perovskite type semiconductors, organic-inorganic hybrid perovskite type semiconductors; wherein the general formula of the inorganic perovskite semiconductor is AMX 3 Wherein A is Cs + M is selected from Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ X is selected from Cl - 、Br - 、I - One of the following; the general formula of the organic-inorganic hybridization perovskite type semiconductor is BMX 3 Wherein B is an organic amine cation and M is selected from Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ X is selected from Cl - 、Br - 、I - One of them.
8. The led of claim 1, wherein the material of the protrusions is the same as the material of the interdigitated electrodes.
9. The preparation method of the light-emitting diode is characterized by comprising the following steps of:
providing a substrate, an electrode material, a pit material for forming a pit and an etching solution for etching the pit material;
interdigital electrode formation: simultaneously depositing the electrode material and the pit material on the substrate to form a doped structure layer with an interdigital structure; etching the pit material in the doped structure layer by using the etching liquid to form an interdigital electrode with pits;
functional layer formation: forming a functional layer on the interdigital electrode, wherein the thickness of the functional layer is smaller than the depth of the pit; and
and forming a light-emitting layer: a light emitting layer is deposited on the functional layer.
10. The method of claim 9, wherein the mass ratio of the electrode material to the pit material is 0.1-10:1.
11. The method of manufacturing a light emitting diode according to claim 9, wherein the interdigital electrode includes a first electrode and a second electrode, and the functional layer includes a first functional layer and a second functional layer;
the interdigital electrode formation and the functional layer formation include a first electrode formation, a first functional layer formation, a second electrode formation, and a second functional layer formation, which are sequentially performed, and the steps performed include:
simultaneously depositing the material of the first electrode and the pit material on the substrate to form a first doped structure layer corresponding to the first electrode in the interdigital structure; etching the pit material in the first doped structure layer by using the etching liquid to form a first electrode with pits;
forming a first functional layer on the first electrode, wherein the thickness of the first functional layer is smaller than the depth of the pit;
shielding the first functional layer, and simultaneously depositing the material of the second electrode and the pit material on the substrate to form a second doping structure layer corresponding to the second electrode in the interdigital structure; etching the pit material in the second doped structure layer by using the etching liquid to form a second electrode with pits;
And forming a second functional layer on the second electrode, wherein the thickness of the second functional layer is smaller than the depth of the pit.
12. The method according to claim 9, wherein in the formation of the functional layer, the formation of the functional layer on the interdigital electrode is performed by oxidizing the interdigital electrode.
13. The method of manufacturing a light emitting diode according to claim 9, wherein the functional layer has a thickness of 9 to 30nm.
14. The method of manufacturing a light emitting diode according to claim 9, wherein the electrode material is selected from one or more of a conductive metal and a conductive metal oxide; wherein the conductive metal is selected from one or more of zinc, tin, copper, chromium, platinum, nickel, titanium and aluminum, and the conductive metal oxide is selected from one or more of ITO and FTO; and/or
The pit material is one or more of gold, aluminum, copper and palladium; and/or
The etching liquid is selected from the group consisting of AU etch 200, CR etch 200/210, CU etch 200UBM, techniEtch TM TC, techniEtch Al 80.
15. The preparation method of the light-emitting diode is characterized by comprising the following steps of:
Providing a substrate, an electrode material, and a bump material for forming bumps;
interdigital electrode formation: depositing the electrode material on the substrate to form a basic electrode with an interdigital structure; depositing the convex material on the surface of the base electrode to form an interdigital electrode with a convex;
functional layer formation: forming a functional layer on the interdigital electrode, wherein the thickness of the functional layer is smaller than the height of the bulge; and
and forming a light-emitting layer: a light emitting layer is deposited on the functional layer.
16. The method of manufacturing a light-emitting diode according to claim 15, wherein the interdigital electrode includes a plurality of electrode units constituting an interdigital structure, each of the electrode units having the protrusion formed thereon.
17. The method of claim 16, wherein each of the protrusions has a height smaller than a pitch between the adjacent electrode units.
18. The method of claim 15, wherein the mass ratio of the electrode material to the bump material is 100:0.1-5.
19. The method of manufacturing a light-emitting diode according to claim 15, wherein the bump material is the same as the electrode material, and the electrode material is one or more selected from a conductive metal and a conductive metal oxide; wherein the conductive metal is selected from one or more of zinc, tin, copper, chromium, platinum, nickel, titanium and aluminum, and the conductive metal oxide is selected from one or more of ITO and FTO.
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| PCT/CN2022/126813 WO2023116172A1 (en) | 2021-12-23 | 2022-10-21 | Light-emitting diode and manufacturing method therefor |
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