CN116356428A - Method for preparing wool from monocrystalline silicon surface by inverted pyramid wet method - Google Patents

Method for preparing wool from monocrystalline silicon surface by inverted pyramid wet method Download PDF

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CN116356428A
CN116356428A CN202310326805.4A CN202310326805A CN116356428A CN 116356428 A CN116356428 A CN 116356428A CN 202310326805 A CN202310326805 A CN 202310326805A CN 116356428 A CN116356428 A CN 116356428A
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inverted pyramid
hydrofluoric acid
preparing
monocrystalline silicon
wet
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霍晨亮
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Zhuhai Campus Of Beijing Normal University
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Zhuhai Campus Of Beijing Normal University
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Crystallography & Structural Chemistry (AREA)
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Abstract

The invention belongs to the technical field of new materials and solar energy, and provides a method for preparing a single crystal silicon surface inverted pyramid wet-method velvet, which is different from the traditional acidic metal catalytic corrosion in that metal ions are not needed in the method, and a large-area micro-nano inverted pyramid array structure can be prepared on the surface of single crystal silicon. The micro-nano structure inverted pyramid array prepared by the method has the advantages of small volume and the like, is simple in preparation process, low in cost, safe and pollution-free, and can be used for preparing solar cells on a large scale.

Description

Method for preparing wool from monocrystalline silicon surface by inverted pyramid wet method
Technical Field
The invention belongs to the technical field of new materials and solar energy, and particularly relates to a method for preparing a single crystal silicon surface by adopting an inverted pyramid wet method for preparing a texture surface, and also relates to a crystalline silicon solar cell.
Background
The wet chemical corrosion of crystalline silicon can realize the preparation of various silicon micro-nano structures, and has important roles in microelectronics, micro-electromechanical systems and photovoltaic industries. Etching the pyramid array on the crystalline silicon greatly affects the photoelectric conversion efficiency of the photovoltaic solar cell. And the current scientific community is about half a century on the surface of research on solar cells.
Through searching, the Chinese patent with the application number of CN201310562781.9 discloses a surface texturing treatment method for a monocrystalline silicon solar cell, and the monocrystalline silicon solar cell manufactured by the method has higher photoelectric conversion efficiency and good stability, is used for photovoltaic power generation, and is a better choice. The preparation of the monocrystal silicon positive pyramid array is prepared by adopting inorganic alkali solution or organic alkali solution.
The application number of the Chinese patent ZL200410017032.9 discloses a tetramethyl ammonium hydroxide corrosive liquid for silicon corrosion and a preparation method thereof, wherein the tetramethyl ammonium hydroxide corrosive liquid is adopted for preparing the monocrystal silicon positive pyramid array.
Conventional pyramid array preparation methods are limited to preparation with inorganic or organic alkali solutions, but positive pyramid arrays cannot be etched on the silicon surface with acidic hydrofluoric acid solutions.
Therefore, a method of combining metal catalytic etching with alkali etching is proposed to produce an inverted pyramid structure on the silicon surface. Inverted pyramidal structures are typically prepared using copper-containing acidic solutions. The subsequent preparation of inverted pyramidal structures from acidic solutions of copper ions is also gradually improved. However, this method deposits a large amount of copper, which belongs to deep level impurities, causes large carrier recombination, affects photoelectric conversion efficiency, and is not environmentally friendly as waste liquid [ see: xu H.Y., et al control nanoscale inverted pyramids for highly efficient quasi-omnidirectional crystalline silicon solar cells, nanotechnology,2018,29,015403, and Tang Q T, shen HL, et al Cu-assisted chemical etching of bulk c-Si: A rapid and novel method to obtain μm ultrathin flexible c-Si solar cells with asymmetric front and back light trapping structures [ J ]. Sol Energy 2018;170:263-72.].
The method is easy to deposit a large amount of copper nano particles on the silicon surface in the corrosion process, and the corroded inverted pyramid has large size and rough surface and plays no good role in reducing the reflectivity
Disclosure of Invention
The invention aims to provide a novel method for preparing the surface of monocrystalline silicon by adopting an inverted pyramid wet method, which aims to solve the problems that a large amount of metal nano particles are easily deposited on the surface of silicon in the corrosion process, the corroded inverted pyramid has large size and rough surface, and the reduction of reflectivity cannot be well achieved.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
the invention provides a method for preparing wool from monocrystalline silicon by a surface inverted pyramid wet method, which comprises the following steps:
s1, placing a crystal silicon wafer with a clean surface into a container containing a mixed treatment preparation, and reacting for 120-140 minutes at 80 ℃ to etch a large-area micro-nano inverted pyramid suede on the surface of the silicon wafer;
s2, immersing the corroded crystalline silicon wafer in deionized water solution to remove hydrofluoric acid remaining on the surface;
the mixed treatment preparation is a mixed solution of potassium metabisulfite and hydrofluoric acid or a mixed solution of sodium metabisulfite and hydrofluoric acid.
As a further preferable scheme, the crystalline silicon wafer in the S1 is a monocrystalline silicon wafer or a monocrystalline-like silicon wafer.
As a further preferable scheme, the concentration of the potassium metabisulfite is 0.1-1mol/L, and the concentration of the hydrofluoric acid is 10-20mol/L.
As a further preferable scheme, the concentration of the sodium metabisulfite is 0.1-1mol/L, and the concentration of the hydrofluoric acid is 10-20mol/L.
The crystalline silicon solar cell comprises a crystalline silicon substrate, wherein the crystalline silicon substrate is provided with the large-area micro-nano inverted pyramid suede.
Compared with the prior art, the invention has the beneficial effects that:
by improving metal catalytic etching, a novel method for preparing monocrystalline silicon (N type and P type) surface inverted pyramid structure texturing with application prospect in a hydrofluoric acid solution texturing method is researched. The method has the advantages that no metal ions participate in chemical reaction, no metal deposition exists on the surface of the corroded silicon wafer, the corroded micro-nano inverted pyramid structure is macroscopically uniform, the microscopic surface is smooth, the defects are few, and therefore the method has wide application prospects in the fields of solar cells and the like.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention.
FIG. 1 is a diagram showing the morphology of an inverted pyramid array scanning electron microscope prepared on a crystal face of monocrystalline silicon (100).
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments.
The invention realizes anisotropic corrosion of silicon in hydrofluoric acid solution, and can prepare large-area micro-nano inverted pyramid structure on the surface of crystalline silicon (100). The invention is further illustrated by the following examples:
example 1
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.1mol/L potassium metabisulfite and 10mol/L hydrofluoric acid mixed solution to react for 120 minutes at 80 ℃, and then cleaning the corroded silicon piece with deionized water.
Example 2
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.3mol/L potassium metabisulfite and 10mol/L hydrofluoric acid mixed solution to react for 120 minutes at 80 ℃, and then cleaning the corroded silicon piece with deionized water.
Example 3
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.5mol/L potassium metabisulfite and 10mol/L hydrofluoric acid mixed solution to react for 120 minutes at 80 ℃, and then cleaning the corroded silicon piece with deionized water.
Example 4
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.7mol/L potassium metabisulfite and 10mol/L hydrofluoric acid mixed solution to react for 120 minutes at 80 ℃, and then cleaning the corroded silicon piece with deionized water.
Example 5
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 1mol/L potassium metabisulfite and 10mol/L hydrofluoric acid mixed solution to react for 120 minutes at 80 ℃, and then cleaning the corroded silicon piece with deionized water.
Example 6
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.1mol/L potassium metabisulfite and 20mol/L hydrofluoric acid mixed solution to react for 120 minutes at 80 ℃, and then cleaning the corroded silicon piece with deionized water.
Example 7
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.3mol/L potassium metabisulfite and 20mol/L hydrofluoric acid mixed solution to react for 130 minutes at 80 ℃, and then cleaning the corroded silicon piece with deionized water.
Example 8
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.5mol/L potassium metabisulfite and 20mol/L hydrofluoric acid mixed solution to react for 140 minutes at 80 ℃, and then cleaning the corroded silicon piece with deionized water.
Example 9
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.7mol/L potassium metabisulfite and 20mol/L hydrofluoric acid mixed solution to react for 140 minutes at 80 ℃, and then cleaning the corroded silicon piece with deionized water.
Example 10
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 1mol/L potassium metabisulfite and 20mol/L hydrofluoric acid mixed solution to react for 140 minutes at 80 ℃, and then cleaning the corroded silicon piece with deionized water.
Example 11
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.1mol/L potassium metabisulfite and 15mol/L hydrofluoric acid mixed solution to react for 120 minutes at 80 ℃, and then cleaning the corroded silicon piece with deionized water.
Example 12
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.1mol/L sodium metabisulfite and 10mol/L hydrofluoric acid mixed solution to react for 120 minutes at 80 ℃, and then cleaning the corroded silicon piece with deionized water.
Example 13
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.3mol/L sodium metabisulfite and 10mol/L hydrofluoric acid mixed solution to react for 120 minutes at 80 ℃, and then cleaning the corroded silicon piece with deionized water.
Example 14
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.5mol/L sodium metabisulfite and 10mol/L hydrofluoric acid mixed solution to react for 120 minutes at 80 ℃, and then cleaning the corroded silicon piece with deionized water.
Example 15
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.7mol/L sodium metabisulfite and 10mol/L hydrofluoric acid mixed solution to react for 120 minutes at 80 ℃, and then cleaning the corroded silicon piece with deionized water.
Example 16
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 1mol/L sodium metabisulfite and 10mol/L hydrofluoric acid mixed solution to react for 120 minutes at 80 ℃, and then cleaning the corroded silicon piece by deionized water.
Example 17
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.1mol/L sodium metabisulfite and 20mol/L hydrofluoric acid mixed solution to react for 120 minutes at 80 ℃, and then cleaning the corroded silicon piece by deionized water.
Example 18
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.3mol/L sodium metabisulfite and 20mol/L hydrofluoric acid mixed solution to react for 130 minutes at 80 ℃, and then cleaning the corroded silicon piece with deionized water.
Example 19
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.1mol/L sodium metabisulfite and 20mol/L hydrofluoric acid mixed solution to react for 140 minutes at 80 ℃, and then cleaning the corroded silicon piece by deionized water.
Example 20
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.5mol/L sodium metabisulfite and 20mol/L hydrofluoric acid mixed solution to react for 140 minutes at 80 ℃, and then cleaning the corroded silicon piece by deionized water.
Example 21
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.5mol/L sodium metabisulfite and 20mol/L hydrofluoric acid mixed solution to react for 120 minutes at 80 ℃, and then cleaning the corroded silicon piece with deionized water.
Example 22
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.7mol/L sodium metabisulfite and 20mol/L hydrofluoric acid mixed solution to react for 120 minutes at 80 ℃, and then cleaning the corroded silicon piece with deionized water.
Example 23
Placing the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 1mol/L sodium metabisulfite and 20mol/L hydrofluoric acid mixed solution to react for 130 minutes at 80 ℃, and then cleaning the corroded silicon piece with deionized water.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art, who is within the scope of the present invention, should make equivalent substitutions or modifications according to the technical scheme of the present invention and the inventive concept thereof, and should be covered by the scope of the present invention.

Claims (5)

1. The method for preparing the wool by the inverted pyramid wet method on the surface of the monocrystalline silicon is characterized by comprising the following steps of:
s1, placing a crystal silicon wafer with a clean surface into a container containing a mixed treatment preparation, and reacting for 120-140 minutes at 80 ℃ to etch a large-area micro-nano inverted pyramid suede on the surface of the silicon wafer;
s2, immersing the corroded crystalline silicon wafer in deionized water solution to remove hydrofluoric acid remaining on the surface;
the mixed treatment preparation is a mixed solution of potassium metabisulfite and hydrofluoric acid or a mixed solution of sodium metabisulfite and hydrofluoric acid.
2. The method for preparing the texture surface of the monocrystalline silicon by the inverted pyramid wet method according to claim 1, wherein the crystalline silicon wafer in the step S1 is a monocrystalline silicon wafer or a monocrystalline-like silicon wafer.
3. The method for preparing the single crystal silicon surface by the inverted pyramid wet-process texturing method according to claim 1, wherein the concentration of potassium metabisulfite is 0.1-1mol/L, and the concentration of hydrofluoric acid is 10-20mol/L.
4. The method for preparing the single crystal silicon surface by the inverted pyramid wet-process texturing method according to claim 1, wherein the concentration of sodium metabisulfite is 0.1-1mol/L, and the concentration of hydrofluoric acid is 10-20mol/L.
5. A crystalline silicon solar cell comprising a crystalline silicon substrate, wherein the crystalline silicon substrate has a large area micro-nano inverted pyramid texture prepared by the method of any one of claims 1-4.
CN202310326805.4A 2023-03-29 2023-03-29 Method for preparing wool from monocrystalline silicon surface by inverted pyramid wet method Pending CN116356428A (en)

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CN116356428A true CN116356428A (en) 2023-06-30

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