CN116354306B - MEMS packaging optical phased array chip - Google Patents
MEMS packaging optical phased array chip Download PDFInfo
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- CN116354306B CN116354306B CN202310042232.2A CN202310042232A CN116354306B CN 116354306 B CN116354306 B CN 116354306B CN 202310042232 A CN202310042232 A CN 202310042232A CN 116354306 B CN116354306 B CN 116354306B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 43
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 12
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 18
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 18
- 239000012780 transparent material Substances 0.000 claims description 5
- 230000005684 electric field Effects 0.000 abstract description 4
- 239000002210 silicon-based material Substances 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 16
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000016776 visual perception Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0067—Packages or encapsulation for controlling the passage of optical signals through the package
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00317—Packaging optical devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The application relates to an MEMS packaging optical phased array chip, which comprises a beam expansion array, a plurality of optical phased array chips and a plurality of micro-electromechanical systems (MEMS), wherein the beam expansion array is used for changing the propagation path of incident light and comprises an insulating layer and a plurality of through holes distributed on the insulating layer in an array manner; the two light guide layers are oppositely arranged at two sides of the beam expanding array, are respectively positioned at two ends of the through holes and are matched with the through holes to form a plurality of closed accommodating cavities, and each accommodating cavity is filled with alkali metal gas; the refractive index adjusting mechanism is used for changing the refractive index of the alkali metal gas and comprises a control circuit and a plurality of magnetic field generating units connected with the control circuit, and the magnetic field generating units and the through holes are arranged one by one. The MEMS packaging optical phased array chip enables the deflection angle of emergent light not to be limited by the sensitivity coefficient of a silicon material to an electric field, enables the deflection angle of the emergent light to be larger, increases the laser radar field of view range, and is simpler in structure.
Description
Technical Field
The invention relates to an MEMS packaging optical phased array chip, and belongs to the technical field of three-dimensional scanning imaging.
Background
Lidar has long been developed as an important way of human visual perception of environmental information, and technology has been relatively mature and widely used. Common solid-state lidar technologies are: micro-electromechanical system (MEMS), area array Flash (Flash) technology, optical Phased Array (OPA) technology and the like, wherein the optical phased array technology has the characteristics of stable structure, controllable direction and the like during a period without inertia based on a light wave phased array scanning theory and a novel light beam pointing technology.
In the prior art, an integrated optical waveguide type OPA generally adopts a thermo-optical phase modulation method to realize horizontal beam scanning, and the chip has a complex structure, a complex process and high power consumption. In the MEMS packaged chip, the refractive index is fixed, the deflection range of light rays passing through the refractive index structure is small, the view field range is small, in order to increase the view field range, usually, some electronic elements are integrated around the refractive index structure, the electric field intensity around the refractive index structure is changed by changing the voltage at two ends of the electronic elements, and the refractive index of the refractive index structure is changed, so that the emission angle of light rays emitted through the refractive index structure is increased, and the purpose of increasing the view field range of the laser radar is achieved. However, since the sensitivity coefficient of the silicon material to the electric field is limited with the change of the voltage, that is, the refractive index of the medium in the structure of the polarized light made of the silicon material is limited in range, the range of the polarized angle of the light is still limited.
Disclosure of Invention
The invention aims to provide an MEMS packaging optical phased array chip which has a simple structure and is not limited by the electric field sensitivity coefficient of a silicon material and can increase the light deflection angle.
In order to achieve the above purpose, the present invention provides the following technical solutions:
a MEMS packaged optical phased array chip comprising:
the beam expanding array is used for changing the propagation path of incident light and comprises an insulating layer and a plurality of through holes distributed on the insulating layer in an array manner;
the two light guide layers are oppositely arranged at two sides of the beam expanding array, are respectively positioned at two ends of the through holes and are matched with the through holes to form a plurality of closed accommodating cavities, and each accommodating cavity is filled with alkali metal gas; and
the refractive index adjusting mechanism is used for changing the refractive index of the alkali metal gas and comprises a control circuit and a plurality of magnetic field generating units connected with the control circuit, wherein the magnetic field generating units and the through holes are arranged in a one-to-one mode.
Further, the magnetic field generating unit comprises a first annular coil and a second annular coil which are connected with the control circuit, and the first annular coil and the second annular coil are respectively arranged at two ends of the corresponding through hole.
Further, the first annular coil and the second annular coil are respectively embedded in the two light guide layers;
or the first annular coil and the second annular coil are respectively embedded in the end surfaces of the two sides of the insulating layer;
or one of the first annular coil and the second annular coil is embedded in one light guide layer, and the other is embedded in the end face of one side, close to the other light guide layer, of the insulating layer.
Further, anodes of the first annular coils and anodes of the second annular coils are respectively connected to the control circuit, and cathodes of the first annular coils and cathodes of the second annular coils are connected to the control circuit.
Further, the control circuit comprises a power module, a switch group and a current control module which are connected with the power module, and a TTL control module which is connected with the switch group, wherein the switch group comprises a plurality of current switches which are arranged one to one with the magnetic field generating units, and the magnetic field generating units are connected to the power module through corresponding current switches.
Further, the plurality of through holes are uniformly distributed on the insulating layer, and the distances between two adjacent through holes are equal in the X direction and the Y direction.
Further, the cross section of the through hole is circular or polygonal.
Further, the MEMS packaged optical phased array chip has an insulating package, and the light guide layer, the beam expanding array and the refractive index adjusting mechanism are integrated in the insulating package.
Further, the light guide layer and the insulating packaging shell are made of transparent materials.
Further, the MEMS packaged optical phased array chip further comprises a shielding assembly, wherein the shielding assembly comprises two shielding pieces oppositely arranged in the insulating packaging shell;
the shielding pieces are arranged along the axial direction of the through hole, the light guide layer and the beam expanding array are arranged between the two shielding pieces, a gap is formed between at least one of the two shielding pieces and the insulating packaging shell, and the control circuit is arranged in the gap.
The invention has the beneficial effects that: the MEMS packaging optical phased array chip of the application fills alkali metal gas in the closed accommodating cavity formed by matching the through hole and the light guide layer, and is provided with the refractive index adjusting mechanism capable of generating a magnetic field so as to change the refractive index of the alkali metal gas and further increase the deflection angle of emergent light.
The foregoing description is only an overview of the present invention, and is intended to provide a better understanding of the present invention, as it is embodied in the following description, with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
FIG. 1 is a schematic diagram of a side view of an assembled beam expanding array, light guiding layer and magnetic field generating unit of an MEMS packaged optical phased array chip according to an embodiment of the invention;
FIG. 2 is a schematic front view of the beam expanding array and the first annular coil shown in FIG. 1 assembled;
FIG. 3 is a schematic diagram of a cross-sectional structure of an integrally packaged MEMS packaged optical phased array chip;
FIG. 4 is a schematic diagram of the control circuit shown in FIG. 3 assembled with a first loop coil;
fig. 5 is a schematic circuit diagram of the control circuit shown in fig. 4 connected to the magnetic field generating unit.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
The MEMS packaged optical phased array chip may be applied to a three-dimensional laser scanning device, and is used for adjusting an outgoing deflection angle of incident light to form an outgoing light with a larger range, so as to increase a visible range of the three-dimensional laser scanning device. Indeed, the MEMS packaged optical phased array chip may also be applied to other working scenarios, such as 3D sensing, lighting, ranging, and lidar, which is not specifically limited in this application.
Referring to fig. 1 to 3, an embodiment of the present invention provides a MEMS packaged optical phased array chip, which includes a beam expanding array 10 and light guiding layers 2 disposed opposite to two sides of the beam expanding array 10. The beam expanding array 10 comprises an insulating layer 1 and a plurality of through holes 3 distributed on the insulating layer 1 in an array. Wherein the insulating layer 1 is an opaque material, the opaque material includes but is not limited to silicon, the light guide layer 2 is made of a transparent material, and the transparent material includes but is not limited to a silicon-on-insulator, silicon nitride, a silicon dioxide doped or phosphite doped material, and the like. The two light guide layers 2 are respectively positioned at two ends of the through holes 3 to form a plurality of closed accommodating cavities 31 in cooperation with the through holes 3, and each accommodating cavity 31 is filled with alkali metal gas.
In order to uniformly distribute the light intensity in the outgoing direction after the incident light is deflected by the beam expanding array 10, so as to improve the scanning effect on the target object, a plurality of through holes 3 are uniformly distributed on the insulating layer, and the distances between two adjacent through holes 3 are equal in the X direction and the Y direction. The X direction and the Y direction are shown by arrows X and Y in fig. 2, respectively.
Because the MEMS packaged optical phased array chip has different application scenes and is not fixed in shape, the beam expanding array 10 can be configured to be circular, rectangular, irregular, or the like in order to meet the MEMS packaged optical phased array chips with different shapes or sizes. The cross section of the through hole 3 is circular or polygonal. In this embodiment, the cross section of the through hole 3 is circular, and the cross section of the beam expansion array 10 is rectangular. It should be noted that, in order to ensure the use effect of the MEMS packaged optical phased array chip, the shapes of the cross sections of the light guiding layer 2 and the beam expanding whole column 10 should be kept consistent.
The refractive index of the alkali metal gas can be changed along with the change of the magnetic field intensity, and in order to improve the deflection angle of the emergent light, the MEMS packaging optical phased array chip is provided with a refractive index adjusting mechanism for changing the refractive index of the beam expanding array 10, namely changing the refractive index of the alkali metal gas. The refractive index adjusting mechanism comprises a control circuit 4 and a plurality of magnetic field generating units 5 connected with the control circuit 4, wherein the magnetic field generating units 5 and the through holes 3 are arranged in a one-to-one mode.
Specifically, the magnetic field generating unit 5 includes a first loop coil 51 and a second loop coil 52 connected to the control circuit 4, and the first loop coil 51 and the second loop coil 52 are provided at both ends of the corresponding through hole 3, respectively. So that the refractive index of the alkali metal gas at all positions in the accommodating cavity 31 of the through hole 3 can be changed along with the change of the magnetic field intensity, and the deflection effect of the incident light is improved.
The first annular coil 51 and the second annular coil 52 may be respectively embedded in the two light guide layers 2, or respectively embedded in two side end surfaces of the insulating layer 1, or one of the first annular coil 51 and the second annular coil 52 is embedded in one light guide layer 2, and the other is embedded in one side end surface of the insulating layer 1 adjacent to the other light guide layer 2, which is not particularly limited in this application, and it is only required that the first annular coil 51 and the second annular coil 52 are respectively sleeved on two ends of the through hole 3, and in this embodiment, the first annular coil 51 and the second annular coil 52 are respectively embedded in the two light guide layers 2 are described as an example. In this embodiment, the first annular coil 51 and the second annular coil 52 are specifically helmholtz coils, or two series-connected coaxial, equal-diameter, and spaced-apart energized coils.
Referring to fig. 4 in combination with fig. 1, in order to individually adjust the refractive index of the alkali metal gas in each accommodating cavity 31, so as to deflect the incident light to different degrees, in this embodiment, the anodes of the plurality of first annular coils 51 and the anodes of the plurality of second annular coils 52 are respectively connected to the control circuit 4, and the cathodes of the plurality of first annular coils 51 and the cathodes of the plurality of second annular coils 52 are connected to the control circuit 4. So that the control circuit 4 can individually control the first loop coil 51 and the second loop coil 52 of each magnetic field generating unit 5 to generate magnetic fields at both ends of the corresponding through hole 3. Indeed, in other embodiments, the anodes of the first annular coils 51 and the anodes of the second annular coils 52 may be connected to the control circuit 4, and the cathodes of the first annular coils 51 and the cathodes of the second annular coils 52 may be connected to the control circuit 4, respectively. The present invention is not particularly limited herein and may be adjusted in accordance with design requirements.
The connection structure between the first loop coil 51 and the control circuit 4 is the same as the connection structure between the second loop coil 52 and the control circuit 4, and the connection structure between the second loop coil 52 and the control circuit 4 can be seen from the schematic diagram of the control circuit and the first loop coil shown in fig. 4 after assembly.
Referring to fig. 5, the control circuit 4 includes a power module 41, a switch group and a current control module 44 connected to the power module 41, and a TTL control module 43 connected to the switch group, where the switch group includes a plurality of current switches 42 arranged one-to-one with the magnetic field generating units 5, and the magnetic field generating units 5 are connected to the power module 41 through the corresponding current switches 42.
As described above, the TTL control module 43 controls the current switch 42 to be turned on, so that the power module 41, the current switch 42 and the corresponding magnetic field generating unit 5 form a loop, the power module 41 supplies power to the corresponding magnetic field generating unit 5 through the turned-on current switch 42, and the current control module 44 controls the output current of the power module 41. The intensity of the magnetic field is changed by turning on different numbers of the current switches 42 to turn on different numbers of the magnetic field generating units 5 and by changing the magnitude of the output current of the power module 41 to adjust the refractive index of the alkali metal gas, thereby further changing the outgoing direction of the outgoing light emitted from the beam expanding array 10.
It should be noted that, the TTL control module 43 may be controlled by a programmable logic chip, a logic circuit or a single chip microcomputer, and the current control module 44 may change the output current of the power module 41 according to the DA output signal, which is a conventional configuration and will not be described herein.
In this embodiment, the two light guiding layers 2 are all horizontal, so that the deflection angle of the incident light is only related to the refractive index of the alkali metal gas, in other words, only related to the adjusting effect of the refractive index adjusting mechanism, so as to facilitate adjustment of the deflection angle of the incident light.
In this embodiment, the alkali metal gas is cesium metal gas, and indeed, in other embodiments, other alkali metal gases may be selected, which may satisfy that the refractive index thereof may be changed when the magnetic field strength is changed, and the present invention is not limited thereto.
Taking this embodiment as an example, the refractive index of cesium metal gas changes with the change of magnetic field strength. Specifically, the incident light is near-resonant with cesium atom energy levels, and the wavelength is, for example, 852nm, and the energy level shift of the cesium atoms is changed by changing the magnetic field strength, thereby changing the refractive index of the incident light. Expressed by the formula: where ρ represents density, k represents an incident light wave vector, δ represents a detuning amount of incident light and cesium atom energy level, δ is proportional to magnetic field strength, and Γ represents cesium atom energy level width.
Referring to fig. 1, in order to protect each component of the MEMS packaged optical phased array chip to prolong the service life, in this embodiment, the MEMS packaged optical phased array chip has an insulating package 6, and a light guiding layer 2, a beam expanding array 10 and a refractive index adjusting mechanism are integrated in the insulating package 6. It should be noted that, in other embodiments, the control circuit 4 of the refractive index adjusting mechanism may be disposed outside the insulating package 6. The laser transmitter for emitting the laser beam may also be packaged in the insulating package 6, and may be adjusted in accordance with design requirements, and is not particularly limited herein. Meanwhile, in order to avoid shielding light, the insulating package 6 is also made of a transparent material, specifically, transparent plastic.
It should be noted that, in order to facilitate connection between the MEMS packaged optical phased array chip and an external circuit or a control device, a solder joint (not shown) connected to the external circuit or the control device may be further provided on the insulating package 6, and the MEMS packaged optical phased array chip is electrically connected to the solder joint, or a signal transmitting device (not shown) is provided inside the MEMS packaged optical phased array chip, and the signal transmitting device is in signal connection with the external circuit or the control device, which is not limited herein and may be selected in combination with actual requirements, where the signal transmitting device is in the prior art and is not described herein.
Because the MEMS package optical phased array chip of this application is through adjusting the deflection angle of magnetic field intensity in order to adjust incident light, in order to avoid the magnetic field that environment magnetic field or control circuit 4 produced to cause the influence to the MEMS package optical phased array chip of this application, MEMS package optical phased array chip still includes shielding component, and shielding component includes two shields 7 that set up relatively in insulating encapsulation shell 6.
Wherein, in order to avoid shielding the incident light by the shielding member 7, the shielding member 7 is arranged along the axial direction of the through hole 3, the light guiding layer 2 and the beam expanding array 10 are arranged between the two shielding members 7, alternatively, a gap 8 is arranged between at least one of the two shielding members 7 and the insulating package 6, and the control circuit 4 is arranged in the gap 8.
As described above, the shielding member 7 isolates the ambient magnetic field or the magnetic field generated by the control circuit 4, and prevents the ambient magnetic field or the magnetic field generated by the control circuit 4 from affecting the refractive index of the alkali metal gas. Alternatively, in order to avoid the control circuit 4 from blocking light and to adapt to the arrangement structure of the shield 7, the control circuit 4 is also arranged along the axial direction of the through hole 3, and the radial dimension of the MEMS packaged optical phased array chip can be reduced.
In this embodiment, the shielding member 7 may be formed in an arc-shaped sheet shape, or in a horizontal sheet shape, made of permalloy, which is not particularly limited in this application. The axial direction of the through hole 3 is shown by arrow a in fig. 1.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. A MEMS packaged optical phased array chip, comprising:
the beam expanding array is used for changing the propagation path of incident light and comprises an insulating layer and a plurality of through holes distributed on the insulating layer in an array manner;
the two light guide layers are oppositely arranged at two sides of the beam expanding array, are respectively positioned at two ends of the through holes and are matched with the through holes to form a plurality of closed accommodating cavities, and each accommodating cavity is filled with alkali metal gas; and
the refractive index adjusting mechanism is used for changing the refractive index of the alkali metal gas and comprises a control circuit and a plurality of magnetic field generating units connected with the control circuit, wherein the magnetic field generating units and the through holes are arranged in a one-to-one mode.
2. The MEMS packaged optical phased array chip of claim 1 wherein the magnetic field generating unit includes a first loop coil and a second loop coil connected to the control circuit, the first loop coil and the second loop coil being disposed at respective ends of the corresponding through hole.
3. The MEMS packaged optical phased array chip of claim 2 wherein the first loop coil and the second loop coil are embedded in two layers of the light guide layer, respectively;
or the first annular coil and the second annular coil are respectively embedded in the end surfaces of the two sides of the insulating layer;
or one of the first annular coil and the second annular coil is embedded in one light guide layer, and the other is embedded in the end face of one side, close to the other light guide layer, of the insulating layer.
4. The MEMS packaged optical phased array chip of claim 3 wherein anodes of the first plurality of loop coils and anodes of the second plurality of loop coils are respectively connected to the control circuit, and cathodes of the first plurality of loop coils and cathodes of the second plurality of loop coils are connected to the control circuit.
5. The MEMS packaged optical phased array chip of claim 4 wherein the control circuit includes a power module, a switch set and a current control module connected to the power module, and a TTL control module connected to the switch set, the switch set including a number of current switches in a one-to-one arrangement with the magnetic field generating unit, the magnetic field generating unit connected to the power module by corresponding current switches.
6. The MEMS packaged optical phased array chip of claim 1, wherein a plurality of the vias are uniformly arranged on the insulating layer, and the distances between adjacent two vias are equal in the X-direction and the Y-direction.
7. The MEMS packaged optical phased array chip of claim 6 wherein the cross-section of the through hole is circular or polygonal.
8. The MEMS packaged optical phased array chip of claim 1 wherein the MEMS packaged optical phased array chip has an insulating package, the light guide layer, the beam expanding array, and the refractive index adjustment mechanism being integrated within the insulating package.
9. The MEMS packaged optical phased array chip of claim 8 wherein the light guide layer and the insulating package are made of transparent materials.
10. The MEMS packaged optical phased array chip of claim 8 further comprising a shielding assembly including two shields disposed oppositely within the insulating package;
the shielding pieces are arranged along the axial direction of the through hole, the light guide layer and the beam expanding array are arranged between the two shielding pieces, a gap is formed between at least one of the two shielding pieces and the insulating packaging shell, and the control circuit is arranged in the gap.
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| CN202310042232.2A CN116354306B (en) | 2023-01-12 | 2023-01-12 | MEMS packaging optical phased array chip |
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| CN202310042232.2A CN116354306B (en) | 2023-01-12 | 2023-01-12 | MEMS packaging optical phased array chip |
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| CN116354306B true CN116354306B (en) | 2024-01-26 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007148463A (en) * | 2002-09-20 | 2007-06-14 | Rikogaku Shinkokai | Photonic crystal |
| CN102760956A (en) * | 2011-04-29 | 2012-10-31 | 深圳光启高等理工研究院 | Diffuse reflecting device based on metamaterial |
| CN109901263A (en) * | 2019-01-29 | 2019-06-18 | 浙江大学 | A kind of silicon substrate integrated optics phased array chip based on common electrode |
| WO2021158816A1 (en) * | 2020-02-06 | 2021-08-12 | Purdue Research Foundation | Large-scale plasmonic hybrid framework with built-in nanohole arrays as multifunctional optical sensing platforms |
| CN113985679A (en) * | 2021-11-16 | 2022-01-28 | 吉林大学 | Optical phased array system and preparation method thereof |
| CN217034466U (en) * | 2022-04-12 | 2022-07-22 | 深圳迈塔兰斯科技有限公司 | All-solid-state optical phased array and laser radar device |
| CN114779553A (en) * | 2022-05-18 | 2022-07-22 | 北京摩尔芯光科技有限公司 | Optical phased array chip and optical phased array module |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9482887B2 (en) * | 2014-08-01 | 2016-11-01 | California Institute Of Technology | Optical phased array using guided resonance with backside reflectors |
| WO2019191778A1 (en) * | 2018-03-30 | 2019-10-03 | The Regents Of The University Of California | Photonic beam steering and applications for optical communications |
-
2023
- 2023-01-12 CN CN202310042232.2A patent/CN116354306B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007148463A (en) * | 2002-09-20 | 2007-06-14 | Rikogaku Shinkokai | Photonic crystal |
| CN102760956A (en) * | 2011-04-29 | 2012-10-31 | 深圳光启高等理工研究院 | Diffuse reflecting device based on metamaterial |
| CN109901263A (en) * | 2019-01-29 | 2019-06-18 | 浙江大学 | A kind of silicon substrate integrated optics phased array chip based on common electrode |
| WO2021158816A1 (en) * | 2020-02-06 | 2021-08-12 | Purdue Research Foundation | Large-scale plasmonic hybrid framework with built-in nanohole arrays as multifunctional optical sensing platforms |
| CN113985679A (en) * | 2021-11-16 | 2022-01-28 | 吉林大学 | Optical phased array system and preparation method thereof |
| CN217034466U (en) * | 2022-04-12 | 2022-07-22 | 深圳迈塔兰斯科技有限公司 | All-solid-state optical phased array and laser radar device |
| CN114779553A (en) * | 2022-05-18 | 2022-07-22 | 北京摩尔芯光科技有限公司 | Optical phased array chip and optical phased array module |
Non-Patent Citations (4)
| Title |
|---|
| 一种液晶相位调制特性的测量方法;杜升平;傅承毓;黄永梅;罗传欣;汪相如;;光子学报(01);全文 * |
| 光学相控阵技术研究进展;颜跃武;安俊明;张家顺;王亮亮;尹小杰;吴远大;王;;激光与光电子学进展(02);全文 * |
| 杜升平 ; 傅承毓 ; 黄永梅 ; 罗传欣 ; 汪相如 ; .一种液晶相位调制特性的测量方法.光子学报.2017,(01),全文. * |
| 颜跃武 ; 安俊明 ; 张家顺 ; 王亮亮 ; 尹小杰 ; 吴远大 ; 王玥 ; .光学相控阵技术研究进展.激光与光电子学进展.2017,(02),全文. * |
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