CN116346051A - AC voltage stacked power amplifier - Google Patents
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- CN116346051A CN116346051A CN202310191242.2A CN202310191242A CN116346051A CN 116346051 A CN116346051 A CN 116346051A CN 202310191242 A CN202310191242 A CN 202310191242A CN 116346051 A CN116346051 A CN 116346051A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
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- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention provides an alternating voltage stacked power amplifier which comprises a signal input end, an input matching network, a driving stage amplifier, an interstage matching network, an alternating voltage stacked circuit, an output matching network, a signal output end and a bias circuit which are sequentially connected, wherein a base electrode of a first transistor is used as a first input end to be connected with the output end of the interstage matching network, a collector electrode of the first transistor is respectively connected with a first end of a first capacitor and a first end of a first inductor, a second end of the first inductor is used as a second input end to be connected with a second direct current power supply voltage, a second end of the first capacitor is respectively connected with a first end of a second inductor and an emitter electrode of the second transistor, a base electrode of the second transistor is used as a third input end to be connected with the output end of the bias circuit, and a collector electrode of the second transistor is respectively used as a fourth input end to be connected with the second direct current power supply voltage and the output end of the alternating voltage stacked circuit. The alternating voltage stacked power amplifier can improve saturated power and gain.
Description
Technical Field
The present invention relates to the field of wireless communications technologies, and in particular, to a power amplifier with stacked ac voltages.
Background
With the advent of the information age, wireless communication technology has been rapidly developed, and from cellular phones, wireless local area networks, bluetooth, etc., have become an integral part of social life and development. The progress of wireless communication technology has not been separated from the development of radio frequency circuits. As modern wireless communication systems evolve and evolve, so too does the requirements for data transmission rates and capabilities. In particular, the standard for 5GNR is more stringent than the standard for 4G LTE, and the bandwidth of the modulation signal required is wider, and thus the linearity requirements for the radio frequency power amplifier are higher. Typically, a radio frequency power amplifier can achieve higher linearity requirements by increasing the saturated power.
Several techniques exist to increase the saturation power of a power amplifier. For example, where the output power of a single power amplifier is proportional to Vcc 2/RL, where Vcc represents the supply voltage and RL represents the load impedance, then the solution is to increase the supply voltage and decrease the load impedance. However, for mobile handset terminals, it is not desirable to increase the supply voltage in view of the limited supply voltage and the efficiency of the DC-DC converter. Therefore, the load impedance of the single-ended power amplifier is relatively low to meet the high power requirement, which results in matching networks that tend to be narrow-band and excessive loss. However, for parallel combining, differential, cascode, etc., methods, it is necessary to increase the supply voltage or decrease the load impedance to increase both the saturated power and the gain.
Therefore, the saturated power and gain improvement effect of the alternating-current voltage stacked power amplifier is poor, the reliability is low, and the application range is small.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides an alternating-current voltage stacked power amplifier to solve the problems of poor saturated power and gain improvement effect, low reliability and small application range of the existing alternating-current voltage stacked power amplifier.
In order to solve the technical problems, the invention adopts the following technical scheme:
the embodiment of the invention provides a power amplifier of alternating voltage stack, which comprises a signal input end, an input matching network, a driving stage amplifier, an interstage matching network, an alternating voltage stack circuit, an output matching network, a signal output end and a bias circuit for providing bias voltage for the alternating voltage stack circuit, wherein the signal input end, the input matching network, the driving stage amplifier, the interstage matching network, the alternating voltage stack circuit and the bias circuit are sequentially connected;
the alternating voltage stacking circuit comprises a first transistor, a second transistor, a first inductor, a second inductor and a first capacitor, and the input end of the alternating voltage stacking circuit comprises a first input end, a second input end, a third input end and a fourth input end;
the base electrode of the first transistor is used as the first input end to be connected with the output end of the inter-stage matching network, the emitter electrode of the first transistor is grounded, and the collector electrode of the first transistor is respectively connected with the first end of the first capacitor and the first end of the first inductor; the second end of the first inductor is used as the second input end to be connected with a second direct current power supply voltage, the second end of the first capacitor is respectively connected with the first end of the second inductor and the emitter of the second transistor, and the second end of the second inductor is grounded;
the base of the second transistor is connected as the third input to the output of the bias circuit, and the collector of the second transistor is used as the output of the ac voltage stack circuit and is simultaneously connected to a third dc supply voltage.
Preferably, the power amplifier of the ac voltage stack further includes a third inductor, and the collector of the second transistor is connected to the third dc power supply voltage after being connected in series to the third inductor.
Preferably, the power amplifier of the alternating voltage stack further comprises a bias matching circuit, a first end of the bias matching circuit is connected with the base electrode of the second transistor, a second end of the bias matching circuit is connected with the output end of the bias circuit, and a third end of the bias matching circuit is grounded.
Preferably, the bias circuit includes a first bias circuit and a second bias circuit; the input end of the first bias circuit and the input end of the second bias circuit are respectively connected with the power supply voltage, the output end of the first bias circuit is connected with the base electrode of the first transistor, and the output end of the second bias circuit is connected with the base electrode of the second transistor.
Preferably, the ac voltage stacked power amplifier further includes a first resistor and a second resistor; the output end of the first bias circuit is connected to the base electrode of the first transistor after being connected with the first resistor in series; the output end of the second bias circuit is connected to the base electrode of the second transistor after being connected with the second resistor in series.
Preferably, the power amplifier of the ac voltage stack further includes a second capacitor, a first end of the second capacitor is connected to the output end of the inter-stage matching network, and a second end of the second capacitor is connected to the base electrode of the first transistor.
Preferably, the driving stage amplifier includes a third transistor, a third bias circuit, and a third resistor; the output end of the third bias circuit is connected to the base electrode of the third transistor after being connected with the third resistor in series, the collector electrode of the third transistor is respectively connected with the first direct current power voltage and the input end of the inter-stage matching network, and the emitter electrode of the third transistor is grounded;
the power amplifier of the alternating voltage stack further comprises a third capacitor, a first end of the third capacitor is connected with the output end of the input matching network, and a second end of the third capacitor is connected with the base electrode of the third transistor.
Preferably, the power amplifier of the ac voltage stack further comprises a fourth inductor, a first end of the fourth inductor is connected to a collector of the third transistor, and a second end of the fourth inductor is connected to the first dc voltage.
Preferably, the first bias circuit, the second bias circuit, and the third bias circuit have the same structure.
Preferably, the first bias circuit includes a fourth transistor, a fifth transistor, a sixth transistor, a fourth resistor, and a fourth capacitor;
the first end of the fourth resistor is used as the input end of the first bias circuit, and the second end of the fourth resistor is connected with the collector electrode of the fifth transistor;
the collector of the fourth transistor is connected with the power supply voltage, the base of the fourth transistor is respectively connected with the base of the fifth transistor and the first end of the fourth capacitor, and the emitter of the fourth transistor is used as the output end of the first bias circuit;
the base electrode of the fifth transistor is connected with the collector electrode of the fifth transistor, and the emitter electrode of the fifth transistor is connected with the collector electrode of the sixth transistor;
the base of the sixth transistor is connected to the collector of the sixth transistor, and the emitter of the sixth transistor is connected to the second terminal of the fourth capacitor and commonly grounded.
Compared with the related art, in the embodiment of the invention, the input end of the bias circuit is used for connecting the power supply voltage, the output end of the bias circuit is connected with the input end of the alternating voltage stacking circuit, the output end of the alternating voltage stacking circuit is connected with the output matching network, the base electrode of the driving stage amplifier is connected with the input matching network, the emitter electrode of the driving stage amplifier is grounded, the collector electrode of the driving stage amplifier is respectively connected with the first direct current power supply voltage and the input end of the inter-stage matching network, and the output end of the inter-stage matching network is connected with the input end of the alternating voltage stacking circuit; the base electrode of the first transistor is used as a first input end to be connected with the output end of the interstage matching network, the emitter electrode of the first transistor is grounded, and the collector electrode of the first transistor is respectively connected with the first end of the first capacitor and the first end of the first inductor; the second end of the first inductor is used as a second input end to be connected with a second direct current power supply voltage, the second end of the first capacitor is respectively connected with the first end of the second inductor and the emitter of the second transistor, and the second end of the second inductor is grounded; the base of the second transistor is connected as a third input to the output of the biasing circuit, and the collector of the second transistor is connected as an output of the ac voltage stack circuit and is simultaneously adapted to be connected to a third dc supply voltage. The alternating voltage swing output by the signal output end is twice as high as the original alternating voltage swing, so that the alternating voltage swing and the load impedance can be doubled, and compared with a single-ended power amplifier, the saturated power and the gain are both 3dB higher. And further, the saturated power and the gain can be improved without increasing the power supply voltage and reducing the load impedance.
Drawings
The present invention will be described in detail with reference to the accompanying drawings. The foregoing and other aspects of the invention will become more apparent and more readily appreciated from the following detailed description taken in conjunction with the accompanying drawings. In the accompanying drawings:
FIG. 1 is a circuit diagram of an AC voltage stacked power amplifier according to an embodiment of the present invention;
FIG. 2 is a circuit diagram of a first bias circuit according to an embodiment of the invention;
fig. 3 is a simulation diagram of gain power and gain compression of an ac voltage stacked power amplifier in accordance with an embodiment of the present invention.
The power amplifier comprises 100 parts of alternating voltage stacked power amplifier, 1 part of signal input end, 2 parts of input matching network, 3 parts of interstage matching network, 4 parts of alternating voltage stacked circuit, 5 parts of output matching network, 6 parts of signal output end, 7 parts of bias circuit, 71 parts of first bias circuit, 72 parts of second bias circuit, 73 parts of third bias circuit, 8 parts of bias matching circuit, 9 parts of drive stage amplifier.
Detailed Description
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used in the description of the applications herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "comprising" and "having" and any variations thereof in the description and claims of the present application and in the description of the figures above are intended to cover non-exclusive inclusions. The terms first, second and the like in the description and in the claims or in the above-described figures, are used for distinguishing between different objects and not necessarily for describing a sequential or chronological order.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the present application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1-3, an embodiment of the present invention provides an ac voltage stacked power amplifier 100, which includes a signal input end 2, an input matching network 2, a driver stage amplifier 9, an inter-stage matching network 3, an ac voltage stacked circuit 4, an output matching network 5, a signal output end 6, and a bias circuit 7 for providing a bias voltage to the ac voltage stacked circuit 4, wherein an input end of the bias circuit 7 is used for being connected with a supply voltage Vreg, an output end of the bias circuit 7 is connected with an input end of the ac voltage stacked circuit 4, an output end of the ac voltage stacked circuit 4 is connected with the output matching network 5, a base electrode of the driver stage amplifier 9 is connected with the input matching network 2, an emitter electrode of the driver stage amplifier 9 is grounded, a collector electrode of the driver stage amplifier 9 is respectively connected with a first dc power supply voltage 1 and an input end of the inter-stage matching network 3, and an output end of the inter-stage matching network 3 is connected with an input end of the ac voltage stacked circuit 4. The signal input end 2 outputs a radio frequency signal to the input matching network 2, the signal input matching network 2 outputs the radio frequency signal to the driving stage amplifier 9 for power amplification, the driving stage amplifier 9 is used for connecting a first direct current power supply voltage VCC1, the amplified radio frequency signal is output to the inter-stage matching network 3, the inter-stage matching is carried out through the inter-stage matching network 3 and then the amplified radio frequency signal is output to the input end of the alternating current voltage stacking circuit 4, and the alternating current voltage stacking circuit 4 stacks the input radio frequency voltage so as to double the alternating current voltage swing and the load impedance, thereby improving the saturated power and the gain.
The ac voltage stacking circuit 4 includes a first transistor Q1, a second transistor Q2, a first inductor L1, a second inductor L2, and a first capacitor C1, and the input terminal of the ac voltage stacking circuit 4 includes a first input terminal, a second input terminal, a third input terminal, and a fourth input terminal.
The base electrode of the first transistor Q1 is used as the first input end to connect with the output end of the inter-stage matching network 3, the emitter electrode of the first transistor Q1 is grounded, the collector electrode of the first transistor Q1 is respectively connected with the first end of the first capacitor C1 and the first end of the first inductor L1, the second end of the first inductor L1 is used as the second input end to connect with the second dc power supply voltage VCC2, the second end of the first capacitor C1 is respectively connected with the first end of the second inductor L2 and the emitter electrode of the second transistor Q2, and the second end of the second inductor L2 is grounded;
the base of the second transistor Q2 is connected as the third input to the output of the bias circuit 7, and the collector of the second transistor Q2 is connected as the output of the ac voltage stack circuit 4 and is simultaneously connected to a third dc supply voltage VCC3.
The rf voltage output after the driver stage amplifier 9 is connected to the first dc power supply voltage VCC1 is set as the rf partial voltage, and the voltages output after the second dc power supply voltage VCC2 and the third quality power supply voltage VCC3 are connected to the first transistor Q1 and the second transistor Q2, respectively, are set as the dc partial voltages.
Specifically, the first dc power supply voltage VCC1, the second dc power supply voltage VCC2, and the third dc power supply voltage VCC3 are amplified by the driver stage amplifier, the first transistor Q1, and the second transistor Q2, respectively, to form a radio frequency signal, thereby realizing the effect of ac voltage stacking.
Specifically, the first transistor Q1 and the second transistor Q2 realize an alternating voltage stacking function by providing a single-ended output section gain by the driver stage amplifier 9. By connecting the emitter of the second transistor Q2 in parallel with the second inductance L2 to ground, the emitter voltage of the second transistor Q2 is 0 (direct current portion) ±vcc1 (radio frequency portion). A first capacitor C1 is connected in series between the emitter of the second transistor Q2 and the collector of the first transistor Q1, and the first capacitor C1 has a function of isolating the direct current from the alternating current. The collector of the first transistor Q1 is connected in parallel with a first inductance L1 to ground. The collector voltage of the first transistor Q1 is VCC2 (direct current portion) ±vcc1 (radio frequency portion). The collector voltage of the second transistor Q2 is VCC3 (direct current part) ±2vcc1 (radio frequency part). Thus, the ac voltage swing output by the ac voltage stack circuit 4 is twice as large as the original one. It is assumed that the load impedance of the first transistor Q1 is the same as the load impedance of the single-ended power amplifier, while the load impedance of the second transistor Q2 is twice the load impedance of the first transistor Q1. The ac voltage stack 4 can double the ac voltage swing and the load impedance, theoretically, both the saturation power and the gain are 3dB higher than a single-ended power amplifier. Therefore, an increase in power amplifier gain and saturated power can be achieved by the driver stage amplifier 9 and the alternating voltage stack circuit 4.
In this embodiment, the ac-stacked power amplifier 100 further includes a third inductor L3, and the emitter of the second transistor Q2 is connected to the third dc power supply voltage VCC3 through the third inductor L3 connected in series. The second direct current power supply voltage VCC3 is conveniently connected with the emitter of the second transistor Q2 through the third inductor L3, so that the voltage of the emitter of the second transistor Q2 is lower than the second direct current power supply voltage VCC3, and the output load voltage is stable and high in reliability.
In this embodiment, the ac voltage stacked power amplifier 100 further includes a bias matching circuit 8, a first end of the bias matching circuit 8 is connected to the base of the second transistor Q2, a second end of the bias matching circuit 8 is connected to the output end of the bias circuit 7, and a third end of the bias matching circuit 8 is grounded. The bias matching circuit 8 is connected with the bias circuit 7 and is used for outputting the bias voltage of the bias circuit 7 to the base electrode of the second transistor Q2 after matching, and increasing the input voltage of the second transistor Q2, so that the collector voltage swing and the load impedance of the second transistor Q2 are larger, and the saturated power and the gain of the power amplifier are improved.
In the present embodiment, the bias circuit 7 includes a first bias circuit 71 and a second bias circuit 72; the input end of the first bias circuit 71 and the input end of the second bias circuit 72 are respectively connected to the power supply voltage, the output end of the first bias circuit 71 is connected to the base electrode of the first transistor Q1, and the output end of the second bias circuit 72 is connected to the base electrode of the second transistor Q2. The first transistor Q1 and the second transistor Q2 are provided with an input voltage bias by a first bias circuit 71 and a second bias circuit 72, respectively.
In this embodiment, the ac voltage stacked power amplifier 100 further includes a first resistor R1 and a second resistor R2; the output end of the first bias circuit 71 is connected to the base electrode of the first transistor Q1 after being connected in series with the first resistor R1; the output end of the second bias circuit 72 is connected to the base of the second transistor Q2 via the second resistor R2 in series.
Wherein, a first end of the first resistor R1 is connected to the output end of the first bias circuit 71, and a second end of the first resistor R1 is connected between the base of the first transistor Q1 and the output end of the inter-stage matching network 3; the first end of the second resistor R2 is connected to the output end of the second bias circuit 72, the second end of the second resistor R2 is connected to the first resistor R1 and the second resistor R2 at the second end of the bias matching circuit 8, and the bias voltages output by the first bias circuit 71 and the second bias circuit 72 are respectively subjected to voltage reduction processing, so that the voltages output to the base electrode of the first transistor Q1 and the base electrode of the second transistor Q2 are stable and have high reliability.
In this embodiment, the ac-stacked power amplifier 100 further includes a second capacitor C2, where a first end of the second capacitor C2 is connected to the output end of the inter-stage matching network 3, and a second end of the second capacitor C2 is connected to the base of the first transistor Q1. The second capacitor C2 is configured to increase the rf voltage output by the inter-stage matching network 3, and output the rf voltage to the base of the first transistor Q1, and implement the function of ac voltage stacking through the first transistor Q1, thereby increasing the saturated power and the gain of the power amplifier.
In this embodiment, the driving stage amplifier includes a third transistor Q3, a third bias circuit 73, and a third capacitor C3, where an output end of the third bias circuit 73 is connected to a base of the third transistor Q3 after being connected in series to the third resistor R3, a collector of the third transistor Q3 is connected to the first direct current power supply voltage VCC1 and an input end of the inter-stage matching network 3, and an emitter of the third transistor Q3 is grounded. The third capacitor C3 is configured to increase the radio frequency voltage output by the input matching network 2, and output the radio frequency voltage to the base of the driver stage amplifier 9, and implement power amplification by the driver stage amplifier 9, thereby increasing the gain of the power amplifier.
The ac voltage stacked power amplifier 100 further includes a fourth inductor L4, a first end of the fourth inductor L4 is connected to the collector of the third transistor Q3, and a second end of the fourth inductor L4 is connected to the first dc voltage VCC1. The voltage of the collector of the third transistor Q3 and the voltage stability are improved.
In this embodiment, the first bias circuit 71, the second bias circuit 72, and the third bias circuit 73 have the same structure. By changing the parameters of the components inside the first bias circuit 71, the second bias circuit 72 and the third bias circuit 73, different bias voltages are outputted for biasing the first transistor Q1, the second transistor Q2 and the driver stage amplifier 9, respectively.
In the present embodiment, the first bias circuit 71 includes a fourth transistor Q4, a fifth transistor Q5, a sixth transistor Q6, a fourth resistor R4, and a fourth capacitor C4.
A first end of the fourth resistor R4 is used as an input end of the first bias circuit 71, and a second end of the fourth resistor R4 is connected with a collector electrode of the fifth transistor Q5;
the collector of the fourth transistor Q4 is connected to the supply voltage, the base of the fourth transistor Q4 is connected to the base of the fifth transistor Q5 and the first end of the fourth capacitor C4, respectively, and the emitter of the fourth transistor Q4 is used as the output end of the first bias circuit 71;
a base electrode of the fifth transistor Q5 is connected to a collector electrode of the fifth transistor Q5, and an emitter electrode of the fifth transistor Q5 is connected to a collector electrode of the sixth transistor Q6;
the base of the sixth transistor Q6 is connected to the collector of the sixth transistor Q6, and the emitter of the sixth transistor Q6 is connected to the second terminal of the fourth capacitor C4 and commonly grounded.
In this embodiment, when the output power of the ac voltage stacked power amplifier 100 is continuously increased, the output gain is also continuously increased, the gain compression gradually decreases with the increase of the output gain, and when the output gain is maximum, the gain compression is 0. As the output power continues to increase, the output gain is decreasing and the gain compression is increasing.
It should be noted that the above embodiments described above with reference to the drawings are only for illustrating the present invention and not for limiting the scope of the present invention, and it should be understood by those skilled in the art that modifications or equivalent substitutions to the present invention are intended to be included in the scope of the present invention without departing from the spirit and scope of the present invention. Furthermore, unless the context indicates otherwise, words occurring in the singular form include the plural form and vice versa. In addition, unless specifically stated, all or a portion of any embodiment may be used in combination with all or a portion of any other embodiment.
Claims (10)
1. The power amplifier of alternating voltage stack, it includes signal input end, input matching network, driver stage amplifier, interstage matching network, alternating voltage stack circuit, output matching network, signal output end, and bias circuit used for providing bias voltage for said alternating voltage stack circuit sequentially connected, the input end of the said bias circuit is used for connecting the supply voltage, the output end of the said bias circuit connects the input end of the said alternating voltage stack circuit, the output end of the said alternating voltage stack circuit connects the said output matching network, characterized by that, the base of the said driver stage amplifier connects the said input matching network, the emitter of the said driver stage amplifier is grounded, the collector of the said driver stage amplifier connects the first direct current supply voltage and input end of the said interstage matching network separately, the output end of the said interstage matching network connects the input end of the said alternating voltage stack circuit;
the alternating voltage stacking circuit comprises a first transistor, a second transistor, a first inductor, a second inductor and a first capacitor, and the input end of the alternating voltage stacking circuit comprises a first input end, a second input end, a third input end and a fourth input end;
the base electrode of the first transistor is used as the first input end to be connected with the output end of the inter-stage matching network, the emitter electrode of the first transistor is grounded, and the collector electrode of the first transistor is respectively connected with the first end of the first capacitor and the first end of the first inductor; the second end of the first inductor is used as the second input end to be connected with a second direct current power supply voltage, the second end of the first capacitor is respectively connected with the first end of the second inductor and the emitter of the second transistor, and the second end of the second inductor is grounded;
the base of the second transistor is connected as the third input to the output of the bias circuit, and the collector of the second transistor is used as the output of the ac voltage stack circuit and is simultaneously connected to a third dc supply voltage.
2. The ac voltage stacked power amplifier of claim 1, further comprising a third inductor, the collector of the second transistor being connected to the third dc supply voltage via the third inductor in series.
3. The ac voltage stacked power amplifier of claim 1, further comprising a bias match circuit, a first terminal of the bias match circuit being connected to the base of the second transistor, a second terminal of the bias match circuit being connected to the output terminal of the bias circuit, a third terminal of the bias match circuit being grounded.
4. The ac voltage stacked power amplifier of claim 3, wherein the bias circuit comprises a first bias circuit and a second bias circuit; the input end of the first bias circuit and the input end of the second bias circuit are respectively connected with the power supply voltage, the output end of the first bias circuit is connected with the base electrode of the first transistor, and the output end of the second bias circuit is connected with the base electrode of the second transistor.
5. The ac voltage stacked power amplifier of claim 4, further comprising a first resistor and a second resistor; the output end of the first bias circuit is connected to the base electrode of the first transistor after being connected with the first resistor in series; the output end of the second bias circuit is connected to the base electrode of the second transistor after being connected with the second resistor in series.
6. The ac voltage stacked power amplifier of claim 5, further comprising a second capacitor, a first end of the second capacitor connected to the output of the inter-stage matching network, a second end of the second capacitor connected to the base of the first transistor.
7. The ac voltage stacked power amplifier of claim 5, wherein the driver stage amplifier comprises a third transistor, a third bias circuit, and a third resistor; the output end of the third bias circuit is connected to the base electrode of the third transistor after being connected with the third resistor in series, the collector electrode of the third transistor is respectively connected with the first direct current power voltage and the input end of the inter-stage matching network, and the emitter electrode of the third transistor is grounded;
the power amplifier of the alternating voltage stack further comprises a third capacitor, a first end of the third capacitor is connected with the output end of the input matching network, and a second end of the third capacitor is connected with the base electrode of the third transistor.
8. The ac voltage stacked power amplifier of claim 7, further comprising a fourth inductor, a first end of the fourth inductor connected to a collector of the third transistor, a second end of the fourth inductor connected to the first dc voltage.
9. The ac voltage stacked power amplifier of claim 8, wherein the first bias circuit, the second bias circuit, and the third bias circuit are identical in structure.
10. The ac voltage stacked power amplifier of claim 9, wherein the first bias circuit comprises a fourth transistor, a fifth transistor, a sixth transistor, a fourth resistor, and a fourth capacitor;
the first end of the fourth resistor is used as the input end of the first bias circuit, and the second end of the fourth resistor is connected with the collector electrode of the fifth transistor;
the collector of the fourth transistor is connected with the power supply voltage, the base of the fourth transistor is respectively connected with the base of the fifth transistor and the first end of the fourth capacitor, and the emitter of the fourth transistor is used as the output end of the first bias circuit;
the base electrode of the fifth transistor is connected with the collector electrode of the fifth transistor, and the emitter electrode of the fifth transistor is connected with the collector electrode of the sixth transistor;
the base of the sixth transistor is connected to the collector of the sixth transistor, and the emitter of the sixth transistor is connected to the second terminal of the fourth capacitor and commonly grounded.
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| CN202310191242.2A CN116346051A (en) | 2023-02-22 | 2023-02-22 | AC voltage stacked power amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117395761A (en) * | 2023-12-12 | 2024-01-12 | 深圳飞骧科技股份有限公司 | Power supply and bias adjustable radio frequency front end module and radio frequency chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117395761A (en) * | 2023-12-12 | 2024-01-12 | 深圳飞骧科技股份有限公司 | Power supply and bias adjustable radio frequency front end module and radio frequency chip |
| CN117395761B (en) * | 2023-12-12 | 2024-02-20 | 深圳飞骧科技股份有限公司 | Power supply and bias adjustable radio frequency front end module and radio frequency chip |
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