CN116341668B - Quantum bit compensation method, device, equipment, medium and quantum system - Google Patents
Quantum bit compensation method, device, equipment, medium and quantum system Download PDFInfo
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Abstract
The application discloses a quantum bit compensation method, a device, equipment, a medium and a quantum system, wherein the method comprises the following steps: determining a target qubit of the quantum phase gate action, and determining a target voltage change value and duration of the quantum phase gate action; determining adjacent quantum bits of the target quantum bits, and determining crosstalk voltage variation values of the adjacent quantum bits according to duration after acting on the quantum phase gate; and determining the compensation voltages corresponding to the target quantum bit and the adjacent quantum bit respectively according to the target voltage variation value and the crosstalk voltage variation value, so that after the corresponding compensation voltages are applied to the target quantum bit and the adjacent quantum bit simultaneously, the voltage variation of the target quantum bit is the target voltage variation value, and the voltage variation of the adjacent quantum bit is zero. The application can compensate adjacent quantum bits and avoid the action on the target quantum bits, and still maintain the action effect of the original quantum phase gate on the target quantum bits.
Description
Technical Field
The present application relates to the field of quantum computing technology, and more particularly, to a method, apparatus, device, medium, and quantum system for quantum bit compensation.
Background
Superconducting quantum computing is one of the hottest implementations of current quantum computing. However, superconducting quantum computation is still in its early stage of research, and the fidelity of quantum logic gate operation remains to be improved. Crosstalk between qubits is one of the factors affecting the fidelity of quantum logic gate operation. Crosstalk between qubits mainly means that when a quantum phase gate is applied to one of the qubits, since an inputted control signal will flow over the entire quantum chip and there is generally a strong coupling strength between adjacent qubits, the adjacent qubits are affected by the quantum phase gate in addition to the target qubit to which the phase gate is applied, thereby generating unwanted phase accumulation.
In the related art, after a quantum phase gate is applied to a target qubit, a compensation quantum phase gate is applied to a qubit adjacent to the target qubit, thereby eliminating the influence of phase accumulation caused by crosstalk. However, the effect of the original quantum phase gate on the target qubit will be adversely affected by the acting compensating quantum phase gate.
Therefore, how to compensate the adjacent qubit while avoiding the effect on the target qubit, and still maintain the effect of the quantum phase gate on the target qubit originally is a technical problem that needs to be solved by those skilled in the art.
Disclosure of Invention
The application aims to provide a quantum bit compensation method and device, electronic equipment, a computer readable storage medium and a quantum system, which can compensate adjacent quantum bits, avoid the effect on target quantum bits and still maintain the effect of an original quantum phase gate on the target quantum bits.
To achieve the above object, the present application provides a qubit compensation method, including:
determining a target qubit of a quantum phase gate action, and determining a target voltage change value and duration of the quantum phase gate action;
determining adjacent qubits of the target qubit, and determining crosstalk voltage variation values of the adjacent qubits according to the duration after the quantum phase gate is acted;
determining compensation voltages corresponding to the target qubit and the adjacent qubit respectively according to the target voltage variation value and the crosstalk voltage variation value, so that after the corresponding compensation voltages act on the target qubit and the adjacent qubit simultaneously, the voltage variation of the target qubit is the target voltage variation value, and the voltage variation of the adjacent qubit is zero;
And simultaneously applying corresponding compensation voltages to the target qubit and the adjacent qubit.
Wherein said determining a crosstalk voltage variation value of said adjacent qubit from said duration after said acting said quantum phase gate comprises:
after the quantum phase gate is applied, a crosstalk phase accumulation of the adjacent quantum bits is determined, and a crosstalk voltage variation value of the adjacent quantum bits is determined according to the crosstalk phase accumulation and the duration.
Wherein the determining, according to the target voltage variation value and the crosstalk voltage variation value, the compensation voltages respectively corresponding to the target qubit and the adjacent qubit includes:
determining a crosstalk strength between the target qubit and the adjacent qubit according to the target voltage variation value and the crosstalk voltage variation value;
and determining compensation voltages respectively corresponding to the target qubit and the adjacent qubit according to the crosstalk intensity and the target voltage variation value.
Wherein the determining the crosstalk intensity between the target qubit and the adjacent qubit according to the target voltage variation value and the crosstalk voltage variation value includes:
And determining the ratio between the crosstalk voltage variation value and the target voltage variation value as the crosstalk intensity between the target qubit and the adjacent qubit.
Wherein the determining, according to the crosstalk intensity and the target voltage variation value, the compensation voltages respectively corresponding to the target qubit and the adjacent qubit includes:
constructing a crosstalk matrix based on the crosstalk intensities; wherein, different rows of the crosstalk matrix respectively correspond to the target quantum bit and the adjacent quantum bit, and different columns respectively correspond to the target quantum bit and the adjacent quantum bit, and the target position in the crosstalk matrix is the crosstalk intensity between the quantum bit corresponding to the row and the quantum bit corresponding to the column;
constructing a target column vector based on the target voltage variation value; the position corresponding to the target qubit in the target column vector is the target voltage change value, and the position corresponding to the adjacent qubit is zero;
determining compensation voltages respectively corresponding to the target qubit and the adjacent qubit based on the crosstalk matrix and the target column vector; the product of the crosstalk matrix and the compensation voltage column vector is the target column vector, and different positions of the compensation voltage column vector respectively correspond to the target quantum bit and the adjacent quantum bit.
The target qubit has a first adjacent qubit and a second adjacent qubit, wherein the first adjacent qubit is a qubit at a previous position of the target qubit, and the second adjacent qubit is a qubit at a subsequent position of the target qubit.
Wherein said determining a crosstalk phase accumulation of said adjacent qubits after said acting said quantum phase gate and determining a crosstalk voltage variation value of said adjacent qubits from said crosstalk phase accumulation and said duration comprises:
determining a first crosstalk phase accumulation of the first adjacent qubit and a second crosstalk phase accumulation of the second adjacent qubit after the quantum phase gate is applied;
and determining a first crosstalk voltage variation value of the first adjacent quantum bit according to the first crosstalk phase accumulation and the duration, and determining a second crosstalk voltage variation value of the second adjacent quantum bit according to the second crosstalk phase accumulation and the duration.
Wherein the determining the crosstalk intensity between the target qubit and the adjacent qubit according to the target voltage variation value and the crosstalk voltage variation value includes:
Determining a ratio between the first crosstalk voltage variation value and the target voltage variation value as a first crosstalk strength between the target qubit and the first neighboring qubit;
a ratio between the second crosstalk voltage variation value and the target voltage variation value is determined as a second crosstalk strength between the target qubit and the second adjacent qubit.
Wherein the constructing a crosstalk matrix based on the crosstalk intensities includes:
constructing a crosstalk matrix based on the first crosstalk strength and the second crosstalk strength; the crosstalk matrix specifically comprises:
the method comprises the steps of carrying out a first treatment on the surface of the a is the first crosstalk strength and b is the second crosstalk strength.
The target column vector specifically includes:
；/>is the target voltage variation value.
Wherein the determining, based on the crosstalk matrix and the target column vector, compensation voltages respectively corresponding to the target qubit and the adjacent qubit includes:
and determining compensation voltages respectively corresponding to the target qubit, the first adjacent qubit and the second adjacent qubit based on the crosstalk matrix and the target column vector.
Wherein the determining, based on the crosstalk matrix and the target column vector, compensation voltages respectively corresponding to the target qubit, the first adjacent qubit, and the second adjacent qubit includes:
Constructing a first corresponding relation based on the crosstalk matrix, the target column vector and a first compensation voltage column vector;
the first compensation voltage column vector specifically includes:
；
for the compensation voltage corresponding to the first adjacent qubit,/and/or>Compensating voltage corresponding to the target qubit, < >>A compensation voltage corresponding to the second adjacent qubit;
the first corresponding relation is specifically as follows:
；
and determining compensation voltages respectively corresponding to the target qubit, the first adjacent qubit and the second adjacent qubit based on the first corresponding relation.
Wherein the compensation voltage corresponding to the first adjacent qubit isThe compensation voltage corresponding to the target qubit is +.>The compensation voltage corresponding to the second adjacent qubit is。
Wherein the target qubit has only one third adjacent qubit,
the crosstalk matrix specifically comprises:
the method comprises the steps of carrying out a first treatment on the surface of the c is the crosstalk strength between the target qubit and the third neighboring qubit.
The target column vector specifically includes:
；/>is the target voltage variation value.
Wherein the determining, based on the crosstalk matrix and the target column vector, compensation voltages respectively corresponding to the target qubit and the adjacent qubit includes:
Constructing a second corresponding relation based on the crosstalk matrix, the target column vector and a second compensation voltage column vector;
the second compensation voltage column vector is specifically:
；
compensating voltage corresponding to the target qubit, < >>A compensation voltage corresponding to the third adjacent qubit;
the second corresponding relation is specifically as follows:
；
and determining the compensation voltages respectively corresponding to the target qubit and the third adjacent qubit based on the second corresponding relation.
Wherein the compensation voltage corresponding to the target qubit isThe compensation voltage corresponding to the third adjacent qubit is +.>。
To achieve the above object, the present application provides a qubit compensation device comprising:
a first determining module for determining a target qubit of a quantum phase gate action and determining a target voltage variation value and duration of the quantum phase gate action;
a second determining module, configured to determine adjacent qubits of the target qubit, and determine a crosstalk voltage variation value of the adjacent qubit according to the duration after the quantum phase gate is applied;
a third determining module, configured to determine, according to the target voltage variation value and the crosstalk voltage variation value, compensation voltages corresponding to the target qubit and the adjacent qubit, respectively, so that after the corresponding compensation voltages act on the target qubit and the adjacent qubit simultaneously, a voltage variation of the target qubit is the target voltage variation value, and a voltage variation of the adjacent qubit is zero;
And the compensation module is used for simultaneously applying corresponding compensation voltages to the target qubit and the adjacent qubit.
To achieve the above object, the present application provides an electronic device including:
a memory for storing a computer program;
a processor for implementing the steps of the qubit compensation method as described above when executing the computer program.
To achieve the above object, the present application provides a computer-readable storage medium having stored thereon a computer program which, when executed by a processor, implements the steps of the above-described qubit compensation method.
In order to achieve the above object, the present application provides a quantum system, including the above electronic device, a measurement and control unit, and a quantum chip, where the measurement and control unit is configured to generate a microwave signal according to a compensation voltage and a duration determined by the electronic device, and input the microwave signal into the quantum chip, so as to act on a target qubit and an adjacent qubit in the quantum chip, and simultaneously correspond to the compensation quantum phase gate.
According to the scheme, the quantum bit compensation method provided by the application comprises the following steps: determining a target qubit of a quantum phase gate action, and determining a target voltage change value and duration of the quantum phase gate action; determining adjacent qubits of the target qubit, and determining crosstalk voltage variation values of the adjacent qubits according to the duration after the quantum phase gate is acted; determining compensation voltages corresponding to the target qubit and the adjacent qubit respectively according to the target voltage variation value and the crosstalk voltage variation value, so that after the corresponding compensation voltages act on the target qubit and the adjacent qubit simultaneously, the voltage variation of the target qubit is the target voltage variation value, and the voltage variation of the adjacent qubit is zero; and simultaneously applying corresponding compensation voltages to the target qubit and the adjacent qubit.
The application has the beneficial effects that: and determining the compensation voltages respectively corresponding to the target quantum bit and the adjacent quantum bit according to the target voltage change value of the quantum phase gate acting on the target quantum bit and the crosstalk voltage change value generated by the quantum phase gate on the adjacent quantum bit, and simultaneously acting the corresponding compensation voltages on the target quantum bit and the adjacent quantum bit to ensure that the voltage change amount of the target quantum bit is the target voltage change value and the voltage change amount of the adjacent quantum bit is zero. Therefore, the quantum bit compensation method provided by the application eliminates crosstalk to adjacent quantum bits, and does not influence the effect of the original quantum phase gate on the target quantum bits. The application also discloses a quantum bit compensation device, electronic equipment and a computer readable storage medium, and the technical effects can be realized.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application as claimed.
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In order to more clearly illustrate the embodiments of the application or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art. The accompanying drawings are included to provide a further understanding of the disclosure, and are incorporated in and constitute a part of this specification, illustrate the disclosure and together with the description serve to explain, but do not limit the disclosure. In the drawings:
FIG. 1 is a flow chart illustrating a method of qubit compensation according to an exemplary embodiment;
FIG. 2 is a flow chart illustrating another qubit compensation method according to an exemplary embodiment;
FIG. 3 is a schematic diagram illustrating the positional relationship of various qubits according to an exemplary embodiment;
FIG. 4 is a flow chart illustrating yet another method of qubit compensation according to an exemplary embodiment;
FIG. 5 is a schematic diagram illustrating another positional relationship of various qubits according to an exemplary embodiment;
FIG. 6 is a block diagram of a qubit compensation device according to an exemplary embodiment;
fig. 7 is a block diagram of an electronic device, according to an example embodiment.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application. In addition, in the embodiments of the present application, "first", "second", etc. are used to distinguish similar objects and are not necessarily used to describe a particular order or precedence.
The embodiment of the application discloses a quantum bit compensation method, which can compensate adjacent quantum bits, avoid the action on target quantum bits and still maintain the action effect of an original quantum phase gate on the target quantum bits.
Referring to fig. 1, a flowchart of a qubit compensation method according to an exemplary embodiment is shown, as shown in fig. 1, including:
s101: determining a target qubit of a quantum phase gate action, and determining a target voltage change value and duration of the quantum phase gate action;
in a specific implementation, a quantum phase gate is applied to the target qubit, that is, a square wave of a target voltage change value Δv is added to a magnetic flux control line of the target qubit, and the duration τ of the square wave is combined to determine the action effect of the quantum phase gate. Assuming that the phase accumulation of the target qubit after acting on the quantum phase gate is Δphase, the phase accumulation is a function of Δv and τ, i.e., Δphase=f (Δv, τ). Thus, if the phase accumulation of the qubit and the duration of the applied quantum phase gate are known, the flux voltage variation accepted by the qubit can be extrapolated as well. That is, fang Bohou, which has a target qubit voltage Δv and a duration τ, is applied to the target qubit, and the phase change of the corresponding qubit is obtained by quantum state chromatography, so that the voltage change Δv can be reversely deduced.
S102: determining adjacent qubits of the target qubit, and determining crosstalk voltage variation values of the adjacent qubits according to the duration after the quantum phase gate is acted;
in this step, adjacent qubits to the target qubit are determined. After a quantum phase gate is applied to the target qubit, a crosstalk voltage variation value of adjacent qubits is determined.
As a possible implementation, the determining, after the quantum phase gate is applied, a crosstalk voltage variation value of the adjacent quantum bit according to the duration includes: after the quantum phase gate is applied, a crosstalk phase accumulation of the adjacent quantum bits is determined, and a crosstalk voltage variation value of the adjacent quantum bits is determined according to the crosstalk phase accumulation and the duration.
In a specific implementation, the flux voltage variation accepted by the qubit can be extrapolated back from the phase accumulation of the qubit and the duration of the applied quantum phase gate, according to the principles described above. After the quantum phase gate is acted on the target quantum bit, the crosstalk phase accumulation of the adjacent quantum bit is determined, and the magnetic flux voltage variation accepted by the adjacent quantum bit, namely the crosstalk voltage variation value, is reversely deduced according to the crosstalk phase accumulation of the adjacent quantum bit and the duration time of the acted quantum phase gate.
S103: determining compensation voltages corresponding to the target qubit and the adjacent qubit respectively according to the target voltage variation value and the crosstalk voltage variation value, so that after the corresponding compensation voltages act on the target qubit and the adjacent qubit simultaneously, the voltage variation of the target qubit is the target voltage variation value, and the voltage variation of the adjacent qubit is zero;
s104: and simultaneously applying corresponding compensation voltages to the target qubit and the adjacent qubit.
In specific implementation, according to the target voltage change value of the quantum phase gate acting on the target quantum bit and the crosstalk voltage change value generated by the quantum phase gate on the adjacent quantum bit, determining the compensation voltages corresponding to the target quantum bit and the adjacent quantum bit respectively, and simultaneously acting the corresponding compensation voltages on the target quantum bit and the adjacent quantum bit, that is, simultaneously acting the corresponding compensation quantum phase gate on the target quantum bit and the adjacent quantum bit, which is equivalent to simultaneously acting the magnetic flux voltage on the magnetic flux control line of the target quantum bit and the adjacent quantum bit as the corresponding compensation voltage and the square wave with the duration being the duration, so that the voltage change amount of the target quantum bit is the target voltage change value and the voltage change amount of the adjacent quantum bit is zero. The process of compensating the quantum phase gate for the qubit effect is: the upper computer generates a control signal based on the compensation voltage and the duration time, the measurement and control unit receives the control signal, the arbitrary waveform generator in the control signal carries out digital-to-analog conversion, the corresponding microwave signal is output, the magnetic flux control line of the quantum bit is input, and the effect of the compensation quantum phase gate on the quantum bit is realized.
As a possible implementation manner, the determining the compensation voltages respectively corresponding to the target qubit and the adjacent qubit according to the target voltage variation value and the crosstalk voltage variation value includes: determining a crosstalk strength between the target qubit and the adjacent qubit according to the target voltage variation value and the crosstalk voltage variation value; and determining compensation voltages respectively corresponding to the target qubit and the adjacent qubit according to the crosstalk intensity and the target voltage variation value.
In a specific implementation, a ratio between the crosstalk voltage variation value and the target voltage variation value may be determined as a crosstalk intensity between the target qubit and the adjacent qubit, where the crosstalk intensity is less than one. And then, determining the compensation voltages respectively corresponding to the target quantum bit and the adjacent quantum bit according to the crosstalk intensity and the target voltage variation value.
As a possible implementation manner, the determining the compensation voltages respectively corresponding to the target qubit and the adjacent qubit according to the crosstalk intensity and the target voltage variation value includes: constructing a crosstalk matrix based on the crosstalk intensities; wherein, different rows of the crosstalk matrix respectively correspond to the target quantum bit and the adjacent quantum bit, and different columns respectively correspond to the target quantum bit and the adjacent quantum bit, and the target position in the crosstalk matrix is the crosstalk intensity between the quantum bit corresponding to the row and the quantum bit corresponding to the column; constructing a target column vector based on the target voltage variation value; the position corresponding to the target qubit in the target column vector is the target voltage change value, and the position corresponding to the adjacent qubit is zero; determining compensation voltages respectively corresponding to the target qubit and the adjacent qubit based on the crosstalk matrix and the target column vector; the product of the crosstalk matrix and the compensation voltage column vector is the target column vector, and different positions of the compensation voltage column vector respectively correspond to the target quantum bit and the adjacent quantum bit.
In specific implementation, firstly, a crosstalk matrix is constructed based on crosstalk intensity between a target quantum bit and an adjacent quantum bit, different rows of the crosstalk matrix respectively correspond to the target quantum bit and the adjacent quantum bit, that is, the number of rows and the number of columns of the crosstalk matrix are both one plus the number of the adjacent quantum bits. The target position in the crosstalk matrix is the crosstalk intensity between the qubit corresponding to the row and the qubit corresponding to the column. If a certain position belongs to a row and a column which correspond to target qubits, the value of the position is 1, if a certain position belongs to a row and a column which correspond to the same adjacent qubits, the value of the position is 1, if a certain position belongs to a row and a column which correspond to different adjacent qubits, the value of the position is 0, and if a certain position belongs to a row and a column which correspond to target qubits and adjacent qubits respectively, the value of the position is the crosstalk intensity between the target qubits and the adjacent qubits.
And secondly, constructing a target column vector based on the target voltage change value of the quantum phase gate, wherein different rows in the target column vector respectively correspond to target quantum bits and adjacent quantum bits, the position corresponding to the target quantum bits is the target voltage change value, and the position corresponding to the adjacent quantum bits is zero.
Then, a compensation voltage column vector is constructed based on compensation voltages respectively corresponding to the target qubit and the adjacent qubit, and different rows in the target column vector respectively correspond to the target qubit and the adjacent qubit.
Finally, constructing a corresponding relation: the product of the crosstalk matrix and the compensation voltage column vector is equal to the target column vector, so that the value of each position in the compensation voltage column vector can be calculated on the premise of knowing the crosstalk matrix and the target column vector, and further the compensation voltages respectively corresponding to the target quantum bit and the adjacent quantum bit are obtained.
According to the quantum bit compensation method provided by the embodiment of the application, the compensation voltages respectively corresponding to the target quantum bit and the adjacent quantum bit are determined according to the target voltage change value of the quantum phase gate acting on the target quantum bit and the crosstalk voltage change value generated by the quantum phase gate on the adjacent quantum bit, and the corresponding compensation voltages are simultaneously acted on the target quantum bit and the adjacent quantum bit, so that the voltage change of the target quantum bit is the target voltage change value, and the voltage change of the adjacent quantum bit is zero. Therefore, the quantum bit compensation method provided by the embodiment of the application eliminates crosstalk to adjacent quantum bits, and does not influence the effect of the original quantum phase gate on the target quantum bit.
The embodiment of the application discloses a quantum bit compensation method, which further describes and optimizes a technical scheme relative to the previous embodiment. Specific:
referring to fig. 2, a flowchart of another qubit compensation method is shown according to an exemplary embodiment, as shown in fig. 2, including:
s201: determining a target qubit of a quantum phase gate action, and determining a target voltage change value and duration of the quantum phase gate action;
s202: determining a first adjacent quantum bit and a second adjacent quantum bit of the target quantum bit, wherein the first adjacent quantum bit is a quantum bit of a previous position of the target quantum bit, and the second adjacent quantum bit is a quantum bit of a subsequent position of the target quantum bit;
in this embodiment, as shown in fig. 3, the positional relationship of each qubit is that the target qubit is qubit1 (qubit 1), the first adjacent qubit is qubit0 (qubit 0), and the second adjacent qubit is qubit2 (qubit 2).
S203: determining a first crosstalk phase accumulation of the first adjacent qubit and a second crosstalk phase accumulation of the second adjacent qubit after the quantum phase gate is applied;
S204: determining a first crosstalk voltage variation value of the first adjacent qubit according to the first crosstalk phase accumulation and the duration, and determining a second crosstalk voltage variation value of the second adjacent qubit according to the second crosstalk phase accumulation and the duration;
s205: determining a ratio between the first crosstalk voltage variation value and the target voltage variation value as a first crosstalk intensity between the target qubit and the first adjacent qubit, and determining a ratio between the second crosstalk voltage variation value and the target voltage variation value as a second crosstalk intensity between the target qubit and the second adjacent qubit;
s206: constructing a crosstalk matrix based on the first crosstalk strength and the second crosstalk strength;
the crosstalk matrix specifically comprises:
the method comprises the steps of carrying out a first treatment on the surface of the a is the first crosstalk strength and b is the second crosstalk strength.
S207: constructing a target column vector based on the target voltage variation value;
the target column vector specifically includes:
；/>is the target voltage variation value.
S208: determining compensation voltages respectively corresponding to the target qubit, the first adjacent qubit and the second adjacent qubit based on the crosstalk matrix and the target column vector;
In a specific implementation, a first corresponding relation is constructed based on the crosstalk matrix, the target column vector and the first compensation voltage column vector, and compensation voltages respectively corresponding to the target qubit, the first adjacent qubit and the second adjacent qubit are determined based on the first corresponding relation.
The first compensation voltage column vector is specifically:
；
is the firstCompensation voltage corresponding to adjacent qubits, +.>Compensation voltage corresponding to the target qubit, < >>A compensation voltage corresponding to the second adjacent quantum bit;
the first corresponding relation is specifically:
；
further, the following equation set is constructed based on the first correspondence:
；
solving the equation set to obtain the compensation voltage corresponding to the first adjacent qubit asThe compensation voltage corresponding to the target qubit is +.>The compensation voltage corresponding to the second adjacent quantum bit is。
S209: and simultaneously applying corresponding compensation voltages to the target qubit, the first adjacent qubit and the second adjacent qubit.
Acting magnetic flux voltage on qubit0Acting a flux voltage on qubit1Applying a flux voltage to qubit2>At this time, the target qubit1 corresponds to the applied flux voltage +. >While qubit0 and qubit2 compensate the quantum phase gate by acting to cancel the unwanted phase change effects of crosstalk.
The embodiment of the application discloses a quantum bit compensation method, and compared with the first embodiment, the technical scheme is further described and optimized. Specific:
referring to fig. 4, a flowchart of yet another qubit compensation method is shown according to an exemplary embodiment, as shown in fig. 4, comprising:
s301: determining a target qubit of a quantum phase gate action, and determining a target voltage change value and duration of the quantum phase gate action;
s302: determining a third adjacent quantum bit adjacent to the target quantum bit;
in this embodiment, as shown in fig. 5, the positional relationship of each qubit is that the target qubit is qubit0 (qubit 0), and the third adjacent qubit is qubit1 (qubit 1).
S303: determining a third crosstalk phase accumulation for the third adjacent qubit after the quantum phase gate is applied;
s304: determining a third crosstalk voltage variation value of the third adjacent qubit according to the third crosstalk phase accumulation and the duration;
S305: determining a ratio between the third crosstalk voltage variation value and the target voltage variation value as a third crosstalk strength between the target qubit and the third neighboring qubit;
s306: constructing a crosstalk matrix based on the third crosstalk intensity;
the crosstalk matrix specifically comprises:
the method comprises the steps of carrying out a first treatment on the surface of the c is a third crosstalk strength between the target qubit and the third neighboring qubit.
S307: constructing a target column vector based on the target voltage variation value;
the target column vector specifically includes:
；/>is the target voltage variation value.
S308: determining compensation voltages respectively corresponding to the target qubit and the third adjacent qubit based on the crosstalk matrix and the target column vector;
in a specific implementation, a second corresponding relation is constructed based on the crosstalk matrix, the target column vector and the second compensation voltage column vector, and compensation voltages respectively corresponding to the target qubit and the third adjacent qubit are determined based on the second corresponding relation.
The second compensation voltage column vector is specifically:
；
compensation voltage corresponding to the target qubit, < >>The compensation voltage corresponding to the third adjacent sub-bit;
The second corresponding relation is specifically as follows:
；
further, the following equation set is constructed based on the second correspondence:
；
solving the above equation set to obtain the compensation voltage corresponding to the target qubit asThe compensation voltage corresponding to the third adjacent sub-bit is +.>。
S309: and simultaneously applying corresponding compensation voltages to the target qubit and the third adjacent qubit.
Acting magnetic flux voltage on qubit0Acting a flux voltage on qubit1At this time, the target qubit0 corresponds to the applied flux voltage +.>While qubit1 compensates for the unwanted phase change effects of the quantum phase gate cancelling crosstalk by acting.
The following describes a qubit compensation device according to an embodiment of the present application, and a qubit compensation device described below and a qubit compensation method described above may be referred to with each other.
Referring to fig. 6, a structure diagram of a qubit compensation device according to an exemplary embodiment is shown, as shown in fig. 6, including:
a first determining module 100 for determining a target qubit for a quantum phase gating action and determining a target voltage variation value and duration of the quantum phase gating action;
A second determining module 200, configured to determine adjacent qubits of the target qubit, and determine a crosstalk voltage variation value of the adjacent qubit according to the duration after the quantum phase gate is applied;
a third determining module 300, configured to determine, according to the target voltage variation value and the crosstalk voltage variation value, compensation voltages corresponding to the target qubit and the adjacent qubit, respectively, so that after the corresponding compensation voltages act on the target qubit and the adjacent qubit simultaneously, a voltage variation of the target qubit is the target voltage variation value, and a voltage variation of the adjacent qubit is zero;
and the compensation module 400 is used for simultaneously applying corresponding compensation voltages to the target qubit and the adjacent qubit.
According to the quantum bit compensation device provided by the embodiment of the application, the compensation voltages respectively corresponding to the target quantum bit and the adjacent quantum bit are determined according to the target voltage change value of the quantum phase gate acting on the target quantum bit and the crosstalk voltage change value generated by the quantum phase gate on the adjacent quantum bit, and the corresponding compensation voltages are simultaneously acted on the target quantum bit and the adjacent quantum bit, so that the voltage change of the target quantum bit is the target voltage change value, and the voltage change of the adjacent quantum bit is zero. Therefore, the quantum bit compensation device provided by the embodiment of the application eliminates crosstalk to adjacent quantum bits, and does not influence the action effect of the original quantum phase gate to the target quantum bit.
On the basis of the above embodiment, as a preferred implementation manner, the second determining module 200 is specifically configured to: and determining adjacent quantum bits of the target quantum bit, determining crosstalk phase accumulation of the adjacent quantum bits after the quantum phase gate is acted, and determining crosstalk voltage change values of the adjacent quantum bits according to the crosstalk phase accumulation and the duration.
On the basis of the above embodiment, as a preferred implementation manner, the third determining module 300 includes:
a first determining submodule for determining crosstalk intensity between the target qubit and the adjacent qubit according to the target voltage variation value and the crosstalk voltage variation value;
and the second determining submodule is used for determining the compensation voltages respectively corresponding to the target qubit and the adjacent qubit according to the crosstalk intensity and the target voltage change value.
On the basis of the foregoing embodiment, as a preferred implementation manner, the first determining submodule is specifically configured to: and determining the ratio between the crosstalk voltage variation value and the target voltage variation value as the crosstalk intensity between the target qubit and the adjacent qubit.
On the basis of the above embodiment, as a preferred implementation manner, the second determining submodule includes:
a first construction unit configured to construct a crosstalk matrix based on the crosstalk intensities; wherein, different rows of the crosstalk matrix respectively correspond to the target quantum bit and the adjacent quantum bit, and different columns respectively correspond to the target quantum bit and the adjacent quantum bit, and the target position in the crosstalk matrix is the crosstalk intensity between the quantum bit corresponding to the row and the quantum bit corresponding to the column;
a second construction unit configured to construct a target column vector based on the target voltage variation value; the position corresponding to the target qubit in the target column vector is the target voltage change value, and the position corresponding to the adjacent qubit is zero;
a determining unit, configured to determine compensation voltages respectively corresponding to the target qubit and the adjacent qubit based on the crosstalk matrix and the target column vector; the product of the crosstalk matrix and the compensation voltage column vector is the target column vector, and different positions of the compensation voltage column vector respectively correspond to the target quantum bit and the adjacent quantum bit.
On the basis of the above embodiment, as a preferred implementation manner, the target qubit has a first adjacent qubit and a second adjacent qubit, where the first adjacent qubit is a qubit at a previous position of the target qubit, and the second adjacent qubit is a qubit at a subsequent position of the target qubit.
On the basis of the above embodiment, as a preferred implementation manner, the second determining module 200 is specifically configured to: determining a first crosstalk phase accumulation of the first adjacent qubit and a second crosstalk phase accumulation of the second adjacent qubit after the quantum phase gate is applied; and determining a first crosstalk voltage variation value of the first adjacent quantum bit according to the first crosstalk phase accumulation and the duration, and determining a second crosstalk voltage variation value of the second adjacent quantum bit according to the second crosstalk phase accumulation and the duration.
On the basis of the foregoing embodiment, as a preferred implementation manner, the first determining submodule is specifically configured to: determining a ratio between the first crosstalk voltage variation value and the target voltage variation value as a first crosstalk strength between the target qubit and the first neighboring qubit; a ratio between the second crosstalk voltage variation value and the target voltage variation value is determined as a second crosstalk strength between the target qubit and the second adjacent qubit.
On the basis of the above embodiment, as a preferred implementation manner, the first construction unit is specifically configured to: constructing a crosstalk matrix based on the first crosstalk strength and the second crosstalk strength; the crosstalk matrix specifically comprises:
the method comprises the steps of carrying out a first treatment on the surface of the a is the first crosstalk strength and b is the second crosstalk strength.
On the basis of the above embodiment, as a preferred implementation manner, the target column vector is specifically:
；/>is the target voltage variation value.
On the basis of the above embodiment, as a preferred implementation manner, the determining unit is specifically configured to: and determining compensation voltages respectively corresponding to the target qubit, the first adjacent qubit and the second adjacent qubit based on the crosstalk matrix and the target column vector.
On the basis of the above embodiment, as a preferred implementation manner, the determining unit is specifically configured to: constructing a first corresponding relation based on the crosstalk matrix, the target column vector and a first compensation voltage column vector;
the first compensation voltage column vector specifically includes:
；
for the compensation voltage corresponding to the first adjacent qubit,/and/or>Compensating voltage corresponding to the target qubit, < > >A compensation voltage corresponding to the second adjacent qubit;
the first corresponding relation is specifically as follows:
；
and determining compensation voltages respectively corresponding to the target qubit, the first adjacent qubit and the second adjacent qubit based on the first corresponding relation.
Based on the above embodiment, as a preferred embodiment, the compensation voltage corresponding to the first adjacent qubit isThe compensation voltage corresponding to the target qubit is +.>The compensation voltage corresponding to the second adjacent qubit is +.>。
Based on the above-described embodiments, as a preferred implementation, the target qubit has only one third neighboring qubit,
the crosstalk matrix specifically comprises:
the method comprises the steps of carrying out a first treatment on the surface of the c is the crosstalk strength between the target qubit and the third neighboring qubit.
On the basis of the above embodiment, as a preferred implementation manner, the target column vector is specifically:
；/>is the target voltage variation value.
On the basis of the above embodiment, as a preferred implementation manner, the determining unit is specifically configured to: constructing a second corresponding relation based on the crosstalk matrix, the target column vector and a second compensation voltage column vector;
The second compensation voltage column vector is specifically:
；
compensating voltage corresponding to the target qubit, < >>A compensation voltage corresponding to the third adjacent qubit;
the second corresponding relation is specifically as follows:
；
and determining the compensation voltages respectively corresponding to the target qubit and the third adjacent qubit based on the second corresponding relation.
Based on the above embodiment, as a preferred embodiment, the compensation voltage corresponding to the target qubit isThe compensation voltage corresponding to the third adjacent qubit is +.>。
The specific manner in which the various modules perform the operations in the apparatus of the above embodiments have been described in detail in connection with the embodiments of the method, and will not be described in detail herein.
Based on the hardware implementation of the program modules, and in order to implement the method according to the embodiment of the present application, the embodiment of the present application further provides an electronic device, and fig. 7 is a block diagram of an electronic device according to an exemplary embodiment, and as shown in fig. 7, the electronic device includes:
a communication interface 1 capable of information interaction with other devices such as network devices and the like;
and the processor 2 is connected with the communication interface 1 to realize information interaction with other devices and is used for executing the qubit compensation method provided by one or more technical schemes when running the computer program. And the computer program is stored on the memory 3.
Of course, in practice, the various components in the electronic device are coupled together by a bus system 4. It will be appreciated that the bus system 4 is used to enable connected communications between these components. The bus system 4 comprises, in addition to a data bus, a power bus, a control bus and a status signal bus. But for clarity of illustration the various buses are labeled as bus system 4 in fig. 7.
The memory 3 in the embodiment of the present application is used to store various types of data to support the operation of the electronic device. Examples of such data include: any computer program for operating on an electronic device.
It will be appreciated that the memory 3 may be either volatile memory or nonvolatile memory, and may include both volatile and nonvolatile memory. Wherein the nonvolatile Memory may be Read Only Memory (ROM), programmable Read Only Memory (PROM, programmable Read-Only Memory), erasable programmable Read Only Memory (EPROM, erasable Programmable Read-Only Memory), electrically erasable programmable Read Only Memory (EEPROM, electrically Erasable Programmable Read-Only Memory), magnetic random access Memory (FRAM, ferromagnetic random access Memory), flash Memory (Flash Memory), magnetic surface Memory, optical disk, or compact disk Read Only Memory (CD-ROM, compact Disc Read-Only Memory); the magnetic surface memory may be a disk memory or a tape memory. The volatile memory may be random access memory (RAM, random Access Memory), which acts as external cache memory. By way of example, and not limitation, many forms of RAM are available, such as static random access memory (SRAM, static Random Access Memory), synchronous static random access memory (SSRAM, synchronous Static Random Access Memory), dynamic random access memory (DRAM, dynamic Random Access Memory), synchronous dynamic random access memory (SDRAM, synchronous Dynamic Random Access Memory), double data rate synchronous dynamic random access memory (ddr SDRAM, double Data Rate Synchronous Dynamic Random Access Memory), enhanced synchronous dynamic random access memory (ESDRAM, enhanced Synchronous Dynamic Random Access Memory), synchronous link dynamic random access memory (SLDRAM, syncLink Dynamic Random Access Memory), direct memory bus random access memory (DRRAM, direct Rambus Random Access Memory). The memory 3 described in the embodiments of the present application is intended to comprise, without being limited to, these and any other suitable types of memory.
The method disclosed in the above embodiment of the present application may be applied to the processor 2 or implemented by the processor 2. The processor 2 may be an integrated circuit chip with signal processing capabilities. In implementation, the steps of the above method may be performed by integrated logic circuits of hardware in the processor 2 or by instructions in the form of software. The processor 2 described above may be a general purpose processor, DSP, or other programmable logic device, discrete gate or transistor logic device, discrete hardware components, or the like. The processor 2 may implement or perform the methods, steps and logic blocks disclosed in embodiments of the present application. The general purpose processor may be a microprocessor or any conventional processor or the like. The steps of the method disclosed in the embodiment of the application can be directly embodied in the hardware of the decoding processor or can be implemented by combining hardware and software modules in the decoding processor. The software modules may be located in a storage medium in the memory 3 and the processor 2 reads the program in the memory 3 to perform the steps of the method described above in connection with its hardware.
The corresponding flow in each method of the embodiments of the present application is implemented when the processor 2 executes the program, and for brevity, will not be described in detail herein.
In an exemplary embodiment, the present application also provides a storage medium, i.e. a computer storage medium, in particular a computer readable storage medium, for example comprising a memory 3 storing a computer program executable by the processor 2 for performing the steps of the method described above. The computer readable storage medium may be FRAM, ROM, PROM, EPROM, EEPROM, flash Memory, magnetic surface Memory, optical disk, CD-ROM, etc.
Those of ordinary skill in the art will appreciate that: all or part of the steps for implementing the above method embodiments may be implemented by hardware associated with program instructions, where the foregoing program may be stored in a computer readable storage medium, and when executed, the program performs steps including the above method embodiments; and the aforementioned storage medium includes: a removable storage device, ROM, RAM, magnetic or optical disk, or other medium capable of storing program code.
Alternatively, the above-described integrated units of the present application may be stored in a computer-readable storage medium if implemented in the form of software functional modules and sold or used as separate products. Based on such understanding, the technical solutions of the embodiments of the present application may be embodied essentially or in part in the form of a software product stored in a storage medium, including instructions for causing an electronic device (which may be a personal computer, a server, a network device, etc.) to perform all or part of the methods described in the embodiments of the present application. And the aforementioned storage medium includes: a removable storage device, ROM, RAM, magnetic or optical disk, or other medium capable of storing program code.
The embodiment of the application provides a quantum system, which comprises electronic equipment, a measurement and control unit and a quantum chip, wherein the measurement and control unit is used for generating a microwave signal according to compensation voltage and duration determined by the electronic equipment, and inputting the microwave signal into the quantum chip so as to act on a target quantum bit and an adjacent quantum bit in the quantum chip and simultaneously correspond to the compensation quantum phase gate.
The quantum chip is a physical carrier realized by a quantum algorithm, the measurement and control unit is used for realizing logic control of the quantum chip and reading of the state of the quantum bit, and the electronic equipment is used for controlling the measurement and control unit to generate a signal corresponding to the logic control of the quantum chip and analyzing the reading signal of the quantum bit to acquire the current state of the quantum bit.
In specific implementation, after the electronic device calculates the compensation voltages corresponding to the target quantum bit and the adjacent quantum bit respectively based on the method, the upper computer generates a control signal based on the compensation voltage and the duration time, the measurement and control unit receives the control signal, performs digital-to-analog conversion by an arbitrary waveform generator therein, outputs a corresponding microwave signal, inputs a magnetic flux control line of the quantum bit, and realizes a corresponding compensation quantum phase gate for simultaneously acting on the target quantum bit and the adjacent quantum bit.
The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (19)
1. A method of qubit compensation, comprising:
determining a target qubit of a quantum phase gate action, and determining a target voltage change value and duration of the quantum phase gate action;
determining adjacent qubits of the target qubit, and determining crosstalk voltage variation values of the adjacent qubits according to the duration after the quantum phase gate is acted;
determining compensation voltages corresponding to the target qubit and the adjacent qubit respectively according to the target voltage variation value and the crosstalk voltage variation value, so that after the corresponding compensation voltages act on the target qubit and the adjacent qubit simultaneously, the voltage variation of the target qubit is the target voltage variation value, and the voltage variation of the adjacent qubit is zero;
Applying corresponding compensation voltages to the target qubit and the adjacent qubit simultaneously;
wherein said determining a crosstalk voltage variation value of said adjacent qubit from said duration after said acting said quantum phase gate comprises:
after the quantum phase gate is applied, determining crosstalk phase accumulation of the adjacent quantum bits, and determining a crosstalk voltage variation value of the adjacent quantum bits according to the crosstalk phase accumulation and the duration;
wherein the determining, according to the target voltage variation value and the crosstalk voltage variation value, the compensation voltages respectively corresponding to the target qubit and the adjacent qubit includes:
determining a crosstalk strength between the target qubit and the adjacent qubit according to the target voltage variation value and the crosstalk voltage variation value;
and determining compensation voltages respectively corresponding to the target qubit and the adjacent qubit according to the crosstalk intensity and the target voltage variation value.
2. The qubit compensation method of claim 1, wherein the determining the crosstalk intensity between the target qubit and the neighboring qubit according to the target voltage variation value and the crosstalk voltage variation value comprises:
And determining the ratio between the crosstalk voltage variation value and the target voltage variation value as the crosstalk intensity between the target qubit and the adjacent qubit.
3. The qubit compensation method of claim 2, wherein the determining the compensation voltages respectively corresponding to the target qubit and the adjacent qubit according to the crosstalk intensity and the target voltage variation value comprises:
constructing a crosstalk matrix based on the crosstalk intensities; wherein, different rows of the crosstalk matrix respectively correspond to the target quantum bit and the adjacent quantum bit, and different columns respectively correspond to the target quantum bit and the adjacent quantum bit, and the target position in the crosstalk matrix is the crosstalk intensity between the quantum bit corresponding to the row and the quantum bit corresponding to the column;
constructing a target column vector based on the target voltage variation value; the position corresponding to the target qubit in the target column vector is the target voltage change value, and the position corresponding to the adjacent qubit is zero;
determining compensation voltages respectively corresponding to the target qubit and the adjacent qubit based on the crosstalk matrix and the target column vector; the product of the crosstalk matrix and the compensation voltage column vector is the target column vector, and different positions of the compensation voltage column vector respectively correspond to the target quantum bit and the adjacent quantum bit.
4. A qubit compensation method according to claim 3, wherein the target qubit is present as a first adjacent qubit and as a second adjacent qubit, the first adjacent qubit being a qubit of a previous position of the target qubit and the second adjacent qubit being a qubit of a subsequent position of the target qubit.
5. The method of claim 4, wherein determining a crosstalk phase accumulation of the adjacent qubits after the quantum phase gate is applied and determining a crosstalk voltage variation value of the adjacent qubits based on the crosstalk phase accumulation and the duration comprises:
determining a first crosstalk phase accumulation of the first adjacent qubit and a second crosstalk phase accumulation of the second adjacent qubit after the quantum phase gate is applied;
and determining a first crosstalk voltage variation value of the first adjacent quantum bit according to the first crosstalk phase accumulation and the duration, and determining a second crosstalk voltage variation value of the second adjacent quantum bit according to the second crosstalk phase accumulation and the duration.
6. The qubit compensation method of claim 5, wherein the determining the crosstalk intensity between the target qubit and the neighboring qubit according to the target voltage variation value and the crosstalk voltage variation value comprises:
determining a ratio between the first crosstalk voltage variation value and the target voltage variation value as a first crosstalk strength between the target qubit and the first neighboring qubit;
a ratio between the second crosstalk voltage variation value and the target voltage variation value is determined as a second crosstalk strength between the target qubit and the second adjacent qubit.
7. The qubit compensation method of claim 6, wherein the constructing a crosstalk matrix based on the crosstalk intensities comprises:
constructing a crosstalk matrix based on the first crosstalk strength and the second crosstalk strength; the crosstalk matrix specifically comprises:
the method comprises the steps of carrying out a first treatment on the surface of the a is the first crosstalk strength and b is the second crosstalk strength.
8. The qubit compensation method of claim 7, wherein the target column vector is specifically:
；/>is the target voltage variation value.
9. The qubit compensation method of claim 8, wherein the determining compensation voltages for the target qubit and the neighboring qubit, respectively, based on the crosstalk matrix and the target column vector comprises:
and determining compensation voltages respectively corresponding to the target qubit, the first adjacent qubit and the second adjacent qubit based on the crosstalk matrix and the target column vector.
10. The method of claim 9, wherein determining the compensation voltages for the target qubit, the first adjacent qubit, and the second adjacent qubit based on the crosstalk matrix and the target column vector, respectively, comprises:
constructing a first corresponding relation based on the crosstalk matrix, the target column vector and a first compensation voltage column vector;
the first compensation voltage column vector specifically includes:
；
for the compensation voltage corresponding to the first adjacent qubit,/and/or>Compensating voltage corresponding to the target qubit, < >>A compensation voltage corresponding to the second adjacent qubit;
the first corresponding relation is specifically as follows:
；
And determining compensation voltages respectively corresponding to the target qubit, the first adjacent qubit and the second adjacent qubit based on the first corresponding relation.
11. The method of claim 10, wherein the compensation voltage corresponding to the first adjacent qubit isThe compensation voltage corresponding to the target qubit is +.>The compensation voltage corresponding to the second adjacent qubit is +.>。
12. The method of claim 3, wherein the target qubit has only one third adjacent qubit,
the crosstalk matrix specifically comprises:
the method comprises the steps of carrying out a first treatment on the surface of the c is the crosstalk strength between the target qubit and the third neighboring qubit.
13. The qubit compensation method of claim 12, wherein the target column vector is specifically:
；/>is the target voltage variation value.
14. The qubit compensation method of claim 13, wherein the determining compensation voltages for the target qubit and the neighboring qubit, respectively, based on the crosstalk matrix and the target column vector comprises:
Constructing a second corresponding relation based on the crosstalk matrix, the target column vector and a second compensation voltage column vector;
the second compensation voltage column vector is specifically:
；
compensating voltage corresponding to the target qubit, < >>A compensation voltage corresponding to the third adjacent qubit;
the second corresponding relation is specifically as follows:
；
and determining the compensation voltages respectively corresponding to the target qubit and the third adjacent qubit based on the second corresponding relation.
15. The method of claim 14, wherein the compensation voltage corresponding to the target qubit isThe compensation voltage corresponding to the third adjacent qubit is +.>。
16. A qubit compensation device, comprising:
a first determining module for determining a target qubit of a quantum phase gate action and determining a target voltage variation value and duration of the quantum phase gate action;
a second determining module, configured to determine adjacent qubits of the target qubit, and determine a crosstalk voltage variation value of the adjacent qubit according to the duration after the quantum phase gate is applied;
A third determining module, configured to determine, according to the target voltage variation value and the crosstalk voltage variation value, compensation voltages corresponding to the target qubit and the adjacent qubit, respectively, so that after the corresponding compensation voltages act on the target qubit and the adjacent qubit simultaneously, a voltage variation of the target qubit is the target voltage variation value, and a voltage variation of the adjacent qubit is zero;
the compensation module is used for simultaneously applying corresponding compensation voltages to the target qubit and the adjacent qubit;
the second determining module is specifically configured to: determining adjacent quantum bits of the target quantum bit, determining crosstalk phase accumulation of the adjacent quantum bit after the quantum phase gate is acted, and determining a crosstalk voltage variation value of the adjacent quantum bit according to the crosstalk phase accumulation and the duration;
wherein the third determining module includes:
a first determining submodule for determining crosstalk intensity between the target qubit and the adjacent qubit according to the target voltage variation value and the crosstalk voltage variation value;
And the second determining submodule is used for determining the compensation voltages respectively corresponding to the target qubit and the adjacent qubit according to the crosstalk intensity and the target voltage change value.
17. An electronic device, comprising:
a memory for storing a computer program;
processor for implementing the steps of the qubit compensation method according to any one of claims 1 to 15 when executing said computer program.
18. A computer readable storage medium, characterized in that it has stored thereon a computer program which, when executed by a processor, implements the steps of the qubit compensation method according to any one of claims 1 to 15.
19. A quantum system comprising the electronic device of claim 17, a measurement and control unit, and a quantum chip, wherein the measurement and control unit is configured to generate a microwave signal according to the compensation voltage and the duration determined by the electronic device, and input the microwave signal into the quantum chip, so as to act on a target qubit and an adjacent qubit in the quantum chip to simultaneously correspond to the compensation quantum phase gate.
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