CN116332980A - Method for preparing aminosilane with low chlorine content - Google Patents
Method for preparing aminosilane with low chlorine content Download PDFInfo
- Publication number
- CN116332980A CN116332980A CN202310360653.XA CN202310360653A CN116332980A CN 116332980 A CN116332980 A CN 116332980A CN 202310360653 A CN202310360653 A CN 202310360653A CN 116332980 A CN116332980 A CN 116332980A
- Authority
- CN
- China
- Prior art keywords
- chlorine content
- aminosilane
- preparing
- silane
- low chlorine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000460 chlorine Substances 0.000 title claims abstract description 60
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052801 chlorine Inorganic materials 0.000 title claims abstract description 59
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000000047 product Substances 0.000 claims abstract description 30
- 238000001914 filtration Methods 0.000 claims abstract description 12
- 239000012043 crude product Substances 0.000 claims abstract description 11
- 239000011259 mixed solution Substances 0.000 claims abstract description 7
- 238000002360 preparation method Methods 0.000 claims abstract description 7
- 238000002156 mixing Methods 0.000 claims abstract description 5
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 3
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- QQIRAVWVGBTHMJ-UHFFFAOYSA-N [dimethyl-(trimethylsilylamino)silyl]methane;lithium Chemical compound [Li].C[Si](C)(C)N[Si](C)(C)C QQIRAVWVGBTHMJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000102 alkali metal hydride Inorganic materials 0.000 claims description 2
- 150000008046 alkali metal hydrides Chemical class 0.000 claims description 2
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 150000007514 bases Chemical class 0.000 claims 1
- WRIKHQLVHPKCJU-UHFFFAOYSA-N sodium bis(trimethylsilyl)amide Chemical compound C[Si](C)(C)N([Na])[Si](C)(C)C WRIKHQLVHPKCJU-UHFFFAOYSA-N 0.000 claims 1
- -1 amino-substituted silane Chemical class 0.000 abstract description 6
- 150000001340 alkali metals Chemical class 0.000 abstract 1
- 150000001341 alkaline earth metal compounds Chemical class 0.000 abstract 1
- 239000000706 filtrate Substances 0.000 description 27
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 description 25
- OWKFQWAGPHVFRF-UHFFFAOYSA-N n-(diethylaminosilyl)-n-ethylethanamine Chemical compound CCN(CC)[SiH2]N(CC)CC OWKFQWAGPHVFRF-UHFFFAOYSA-N 0.000 description 17
- 239000007787 solid Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 11
- 238000010907 mechanical stirring Methods 0.000 description 9
- 229910021645 metal ion Inorganic materials 0.000 description 9
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 8
- 238000004255 ion exchange chromatography Methods 0.000 description 7
- GIRKRMUMWJFNRI-UHFFFAOYSA-N tris(dimethylamino)silicon Chemical compound CN(C)[Si](N(C)C)N(C)C GIRKRMUMWJFNRI-UHFFFAOYSA-N 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- TWVSWDVJBJKDAA-UHFFFAOYSA-N n-[bis(dimethylamino)silyl]-n-methylmethanamine Chemical compound CN(C)[SiH](N(C)C)N(C)C TWVSWDVJBJKDAA-UHFFFAOYSA-N 0.000 description 5
- 238000004321 preservation Methods 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 4
- 239000005046 Chlorosilane Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- WZWZGEZPNHWKRW-UHFFFAOYSA-N n-(methylaminosilyl)methanamine Chemical compound CN[SiH2]NC WZWZGEZPNHWKRW-UHFFFAOYSA-N 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- ODZPKZBBUMBTMG-UHFFFAOYSA-N sodium amide Chemical compound [NH2-].[Na+] ODZPKZBBUMBTMG-UHFFFAOYSA-N 0.000 description 3
- CSDQQAQKBAQLLE-UHFFFAOYSA-N 4-(4-chlorophenyl)-4,5,6,7-tetrahydrothieno[3,2-c]pyridine Chemical compound C1=CC(Cl)=CC=C1C1C(C=CS2)=C2CCN1 CSDQQAQKBAQLLE-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 125000005265 dialkylamine group Chemical group 0.000 description 2
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 2
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- SLOMTDIORDREGP-UHFFFAOYSA-N N-(ethylaminosilyl)ethanamine Chemical compound CCN[SiH2]NCC SLOMTDIORDREGP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 125000004663 dialkyl amino group Chemical group 0.000 description 1
- WZUCGJVWOLJJAN-UHFFFAOYSA-N diethylaminosilicon Chemical compound CCN([Si])CC WZUCGJVWOLJJAN-UHFFFAOYSA-N 0.000 description 1
- 229940043279 diisopropylamine Drugs 0.000 description 1
- XREKLQOUFWBSFH-UHFFFAOYSA-N dimethyl 2-acetylbutanedioate Chemical compound COC(=O)CC(C(C)=O)C(=O)OC XREKLQOUFWBSFH-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- NTTOTNSKUYCDAV-UHFFFAOYSA-N potassium hydride Chemical compound [KH] NTTOTNSKUYCDAV-UHFFFAOYSA-N 0.000 description 1
- 229910000105 potassium hydride Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/20—Purification, separation
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
Abstract
The invention discloses a method for preparing aminosilane with low chlorine content, belonging to the technical field of aminosilane preparation. The method comprises the following steps: mixing and reacting the crude product of the organic aminosilane and an alkali metal or alkaline earth metal compound to obtain a mixed solution; filtering the mixed solution to obtain an aminosilane crude product; and rectifying the crude amino-substituted silane product to obtain the amino-substituted silane. The method has the advantages of simple process and easy operation, is widely applicable to the organoaminosilane, and basically obtains the organoaminosilane with chlorine content less than 1ppm without loss.
Description
Technical Field
The invention relates to the technical field of aminosilane preparation, in particular to a method for preparing aminosilane with low chlorine content.
Background
Organoaminosilanes are widely used in the semiconductor industry as precursors for CVD and ALD deposition techniques for the preparation of silicon oxide, silicon nitride films, or other multifunctional films. Techniques have been reported for the preparation of synthetic organoaminosilanes, most commonly using chlorosilane SiH in the presence of a solvent 4-n Cl n (n=1-4) and organic ammonia HNR 1 R 2 Direct reverseFiltering to remove a large amount of byproduct organic amine hydrochloride, and further purifying to obtain SiH 4-n (NR 1 R 2 ) n (n=1-4). A process for the production of dialkylaminosilanes is disclosed, for example, in patent application No. CN107406466a, in which a direct reaction of dichlorosilane and dialkylamine is used to obtain the dialkylaminosilane, but the reaction gives rise to a significant amount of dialkylamine hydrochloride by-products in addition to the target bis (dialkylamino) silane. Patent number CN108084219B discloses a bis (diethylamino) silane, in which a higher yield of diethylamino silane is specifically disclosed using dichlorosilane to react with diethylamine in the presence of a specific catalyst; similarly, in patent application CN108218907A, CN115073507a, chlorosilanes are used to react with organic amines, but a different solvent is replaced or a catalyst is added to increase the reaction yield and reduce the post-treatment process, and no report is made on how to effectively remove chlorine impurities in the organoaminosilane.
The organoaminosilane obtained by the reaction preparation method of chlorosilane and organoamine has chlorine content as high as tens to hundreds ppm, is difficult to remove, and has no related patent report on how to effectively remove chlorine in the organoaminosilane. The presence of chlorine can follow the precursor vapor into the deposition chamber during deposition, corrode equipment and clog feed lines, and can also lead to increased solid particles on the wafer, reducing die yield.
Disclosure of Invention
The invention aims to provide a method for preparing aminosilane with low chlorine content, which solves the following technical problems:
the organoaminosilane prepared by the prior method has high chlorine content.
The aim of the invention can be achieved by the following technical scheme:
a method for preparing an aminosilane having a low chlorine content comprising the steps of:
s1: mixing and reacting the crude product of the aminosilane and an alkaline compound to obtain a mixed solution;
s2: filtering the mixed solution obtained in the step S1 to obtain an aminosilane crude product;
s3: and S2, rectifying the crude aminosilane product obtained in the step S to obtain aminosilane.
As a further aspect of the invention: and cooling the mixed solution to room temperature, and filtering to obtain an aminosilane filtrate, namely an aminosilane crude product.
As a further aspect of the invention: the chlorine content in the crude aminosilane product is less than 1ppm.
As a further aspect of the invention: and S3, rectifying under normal pressure or reduced pressure.
As a further aspect of the invention: the GC purity of the aminosilane is more than 99.5%, the chlorine content is less than 1ppm, and the metal purity of the aminosilane is more than 99.99999%.
As a further aspect of the invention: the structural general formula of the organic aminosilane compound is SiH 4-n (NR 1 R 2 ) n Wherein n=1-4, r 1 、R 2 Is any one of C1-C6 linear alkane and C3-C6 branched alkane, R 1 、R 2 The same or different.
As a further aspect of the invention: the alkaline compound is any one of alkali metal amino salt, alkaline earth metal amino salt, alkali metal hydride, alkaline earth metal hydride, alkaline organic amine metal salt, hexamethyldisilazane potassium amino, sodium hexamethyldisilazane and lithium hexamethyldisilazane.
As a further aspect of the invention: the mixing reaction condition in the step S1 is 20-70 ℃, and the reaction is carried out for 2-6 hours at the temperature.
The invention has the beneficial effects that:
the method disclosed by the application is a simple and efficient method for removing chlorine in the organoaminosilane, has the advantages of simple process, easiness in operation, wide applicable organoaminosilane range, basically no loss, and no influence on the quality of the organoaminosilane product, and the chlorine content in the obtained organoaminosilane is less than 1ppm.
Detailed Description
The following description will clearly and fully describe the technical solutions of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
A method for preparing an aminosilane having a low chlorine content comprising the steps of:
s1: selecting a crude diisopropylaminosilane product with the chlorine content of 300ppm and the test area content of 95% by a gas chromatograph for later use;
s2: adding 100g of the crude diisopropylaminosilane product prepared in the step S1 and 2.0g of sodium amide solid in a nitrogen atmosphere, heating to 40 ℃ under mechanical stirring, reacting for 2 hours at a constant temperature, and filtering to remove the solid in the reaction to obtain a diisopropylaminosilane filtrate; the diisopropylaminosilane content of the diisopropylaminosilane filtrate was 94.5% and the chlorine content was 0.5ppm by ion chromatography.
S3: and (3) rectifying and purifying the diisopropylaminosilane filtrate at normal pressure to obtain a diisopropylaminosilane product, wherein the GC purity of the product is 99.94%, the purity of the metal ion is 99.999995%, and the chlorine content is 0.15ppm.
Example 2
A method for preparing an aminosilane having a low chlorine content comprising the steps of:
s1: selecting a crude diisopropylaminosilane product with chlorine content of 200ppm and test area content of 98% by a gas chromatograph for later use;
s2: 200g of the crude diisopropylaminosilane prepared in the step S1 and 1.0g of sodium hydride solid are added in a nitrogen atmosphere, the mixture is heated to 30 ℃ under mechanical stirring, the reaction is carried out for 3 hours under heat preservation, and the solid in the reaction is removed by filtration, so that a diisopropylaminosilane filtrate is obtained; the content of diisopropylaminosilane in the filtrate was 97.7% by gas chromatograph, and the chlorine content was 0.23ppm by ion chromatograph;
s3: and (3) rectifying and purifying the diisopropylaminosilane filtrate at normal pressure to obtain a diisopropylaminosilane product, wherein the GC purity of the product is 99.95%, the purity of the metal ion is 99.999996% and the chlorine content is 0.12ppm.
Example 3
A process for preparing a low chlorine diisopropylaminosilane comprising the steps of:
s1: diisopropylamine is dissolved in normal hexane, and quantitative Monochlorosilane (MCS) is introduced into the system to react to obtain Diisopropylaminosilane (DIPAS). The system is desolventized and concentrated to obtain crude DIPAS. The chlorine content is 400ppm and the content of the gas chromatograph test area is 80 percent;
s2: 10000g of the crude diisopropylaminosilane product prepared in the step S1 and 40g of hexamethyldisilazane solid are added in a nitrogen atmosphere, and after the reaction is carried out for 1h at room temperature under mechanical stirring, the solid in the reaction is filtered and removed, so that a diisopropylaminosilane filtrate is obtained; the content of diisopropylaminosilane in the filtrate was 79.8% by gas chromatograph, and the chlorine content was 0.4ppm by ion chromatograph;
s3: and (3) rectifying and purifying the diisopropylaminosilane filtrate at normal pressure to obtain a diisopropylaminosilane product, wherein the GC purity of the product is 99.98%, the purity of the metal ion is 99.999997% and the chlorine content is 0.22ppm.
Example 4
A method for preparing a bis (diethylamino) silane having a low chlorine content comprising the steps of:
s1: diethylamine is dissolved in normal hexane, and a certain amount of Dichlorosilane (DCS) is introduced into the system to react to obtain bis (diethylamino) silane (BDEAS). The system is desolventized, concentrated and distilled to obtain BDEAS crude product. The chlorine content is about 250ppm and the content of the testing area of the gas chromatograph is 96 percent;
s2: under inert atmosphere, 5000g of the crude bis (diethylamino) silane product prepared in the step S1 and 45g of sodium amide solid are added, the mixture is heated to 50 ℃ under mechanical stirring, the reaction is carried out for 2 hours under heat preservation, and solids in the reaction are removed through filtration, so that bis (diethylamino) silane filtrate is obtained; the bis (diethylamino) silane content in the bis (diethylamino) silane filtrate was 96.9%, the chlorine content was 0.17ppm by ion chromatography,
s3: and (3) rectifying and purifying the diisopropylaminosilane filtrate at normal pressure to obtain a bis (diethylamino) silane product, wherein the GC purity of the product is 99.97%, the purity of metal ions is 99.999996% and the chlorine content is 0.1ppm.
Example 5
A method for preparing a bis (diethylamino) silane having a low chlorine content comprising the steps of:
s1: 200g of the crude bis (diethylamino) silane prepared in the step S1 of the example 4 and 2.0g of calcium hydride solid are added under an inert atmosphere, the mixture is heated to 35 ℃ under mechanical stirring, the reaction is carried out for 4 hours under heat preservation, and the solid in the reaction is removed by filtration to obtain a bis (diethylamino) silane filtrate; the bis (diethylamino) silane content in the bis (diethylamino) silane filtrate was 95.9%, and the chlorine content thereof was 0.34ppm by ion chromatography;
s3: and (3) rectifying and purifying the diisopropylaminosilane filtrate at normal pressure to obtain a bis (diethylamino) silane product, wherein the GC purity of the product is 99.95%, the purity of metal ions is 99.999996% and the chlorine content is 0.23ppm.
Example 6
A process for preparing a bis (tertiary butylamino) silane having a low chlorine content comprising the steps of:
s1: tert-butylamine is dissolved in n-hexane, and a quantitative Dichlorosilane (DCS) is introduced into the system to react to obtain bis (tert-butylamino) silane (BTBAS). Removing solvent from the system, concentrating and distilling to obtain a BTBAS crude product, wherein the chlorine content is measured to be 260ppm, and the content of the test area of a gas chromatograph is measured to be 98%;
s2: under inert atmosphere, 200g of the crude bis (tertiary butylamino) silane prepared in the step S1 and 1.0g of potassium hydride solid are added, the mixture is heated to 20 ℃ under mechanical stirring, the reaction is carried out for 2 hours under heat preservation, and the solid in the reaction is removed by filtration, so as to obtain bis (tertiary butylamino) silane filtrate; the bis (tertiary butylamino) silane content in the bis (tertiary butylamino) silane filtrate was 98% and the chlorine content was 0.21ppm by ion chromatography;
s3: and (3) rectifying and purifying the diisopropylamino silane filtrate at normal pressure to obtain a bis (tert-butylamino) silane product, wherein the GC purity of the product is 99.93%, the purity of metal ions is 99.999996% and the chlorine content is 0.13ppm.
Example 7
A method for preparing a low chlorine content tris (dimethylamino) silane comprising the steps of:
s1: trichlorosilane (TCS) is dissolved in normal hexane, and quantitative dimethylamine is introduced into the system to react to obtain the tri (dimethylamino) silane (3 DMAS). Removing solvent from the system, concentrating and distilling to obtain a 3DMAS crude product, wherein the chlorine content is measured to be 300ppm, and the content of the testing area of a gas chromatograph is measured to be 95%;
s2: under inert atmosphere, adding 100g of the crude tri (dimethylamino) silane product prepared in the step S1 and 1.0g of sodium amide solid, heating to 40 ℃ under mechanical stirring, preserving heat for 4 hours, and filtering to remove the solid in the reaction to obtain a tri (dimethylamino) silane filtrate; gas chromatograph test S2 yields a tris (dimethylamino) silane content of 94.8% and 0.32ppm chlorine content by ion chromatography;
s3: and (3) rectifying and purifying the diisopropylaminosilane filtrate at normal pressure to obtain a tris (dimethylamino) silane product, wherein the GC purity of the product is 99.96%, the purity of metal ions is 99.999998% and the chlorine content is 0.25ppm.
Example 8
A method for preparing a low chlorine content tris (dimethylamino) silane comprising the steps of:
s1: under inert atmosphere, 5000g of the crude tri (dimethylamino) silane prepared in the step S1 of the example 7 and 40g of hexamethyldisilazane potassium amino are added, the mixture is heated to 20 ℃ under mechanical stirring, the reaction is carried out for 1h under heat preservation, and solids in the reaction are removed by filtration, so that a tri (dimethylamino) silane filtrate is obtained; gas chromatograph test tris (dimethylamino) silane content of 94.8% in tris (dimethylamino) silane filtrate, and 0.33ppm chlorine content by ion chromatography;
s3: and (3) rectifying and purifying the diisopropylaminosilane filtrate at normal pressure to obtain a tris (dimethylamino) silane product, wherein the GC purity of the product is 99.98%, the purity of metal ions is 99.999996% and the chlorine content is 0.25ppm.
Example 9
A process for preparing bis (diethylamino) silane having a low chlorine content comprising the steps of:
s1: the method comprises the steps of dissolving methyl ethylamine in normal hexane, and introducing quantitative Dichlorosilane (DCS) into a system to react to obtain bis (methyl amino) silane (BEMAS). Removing solvent from the system, concentrating, distilling to obtain BEMAS crude product, and measuring to obtain chlorine content of 200ppm and 96% of gas chromatograph test area content;
s2: under inert atmosphere, adding 500g of the crude bis (methylamino) silane product prepared in the step S1 and 3.0g of calcium hydride, heating to 40 ℃ under mechanical stirring, preserving heat for reaction for 3 hours, and filtering to remove solid in the reaction to obtain bis (ethylamino) silane filtrate; the bis (diethylamino) silane content in the bis (diethylamino) silane filtrate obtained in S2 was 95.8%, and the chlorine content thereof was 0.35ppm by ion chromatography;
s3: and (3) rectifying and purifying the diisopropylaminosilane filtrate at normal pressure to obtain a bis (methylamino) silane product, wherein the GC purity of the product is 99.96%, the purity of the metal ion is 99.999995% and the chlorine content is 0.24ppm.
The foregoing describes one embodiment of the present invention in detail, but the description is only a preferred embodiment of the present invention and should not be construed as limiting the scope of the invention. All equivalent changes and modifications within the scope of the present invention are intended to be covered by the present invention.
Claims (7)
1. A process for preparing an aminosilane having a low chlorine content comprising the steps of:
s1: mixing and reacting the crude product of the aminosilane and an alkaline compound to obtain a mixed solution;
s2: filtering the mixed solution obtained in the step S1 to obtain an aminosilane crude product;
s3: and S2, rectifying the crude aminosilane product obtained in the step S to obtain aminosilane.
2. The process for preparing aminosilanes having a low chlorine content as defined in claim 1, wherein the organoaminosilanes have the formula SiH 4-n (NR 1 R 2 ) n Wherein n=1 to 4，R 1 、R 2 Is any one of C1-C6 linear alkane and C3-C6 branched alkane, R 1 、R 2 The same or different.
3. The method for preparing aminosilane of low chlorine content as defined in claim 1, wherein the basic compound is any one of alkali metal amino salts, alkaline earth metal amino salts, alkali metal hydrides, alkaline earth metal hydrides, basic organic amine metal salts, hexamethyldisilazane, sodium hexamethyldisilazane, lithium hexamethyldisilazane.
4. The process for preparing aminosilanes having a low chlorine content as claimed in claim 1, wherein the mixing reaction conditions in S1 are 20 to 70℃and the reaction is carried out for 2 to 6 hours at a temperature.
5. A process for preparing an aminosilane having a low chlorine content as defined in claim 1, in which the crude aminosilane has a chlorine content of less than 1ppm.
6. A process for the preparation of aminosilanes having a low chlorine content as claimed in claim 1, characterized in that the aminosilanes have a GC purity of > 99.5% and a chlorine content of < 1ppm.
7. A process for the preparation of aminosilanes having a low chlorine content as claimed in claim 1, characterized in that the aminosilanes have a metal purity of > 99.99999% and a chlorine content of < 1ppm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310360653.XA CN116332980A (en) | 2023-04-06 | 2023-04-06 | Method for preparing aminosilane with low chlorine content |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310360653.XA CN116332980A (en) | 2023-04-06 | 2023-04-06 | Method for preparing aminosilane with low chlorine content |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116332980A true CN116332980A (en) | 2023-06-27 |
Family
ID=86885655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310360653.XA Pending CN116332980A (en) | 2023-04-06 | 2023-04-06 | Method for preparing aminosilane with low chlorine content |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116332980A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117510533A (en) * | 2023-12-29 | 2024-02-06 | 全椒亚格泰电子新材料科技有限公司 | Preparation process and preparation system of diisopropylamine silane |
| CN117603251A (en) * | 2024-01-23 | 2024-02-27 | 铜陵安德科铭电子材料科技有限公司 | Method for efficiently preparing high-k organometallic precursor |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003171384A (en) * | 2001-12-07 | 2003-06-20 | Shin Etsu Chem Co Ltd | Method for reducing chlorine content of tetrakis(dimethylamino)silane |
| CN101597301A (en) * | 2008-06-03 | 2009-12-09 | 赢创德固赛有限责任公司 | Be used for the method for aftertreatment from the saliferous residue of preparation amino-functional organosilane |
| KR20170005305A (en) * | 2015-07-03 | 2017-01-12 | 주식회사 덕산유엠티 | Process for the preparation of trisalkylaminosilane |
| KR20170025030A (en) * | 2015-08-27 | 2017-03-08 | (주)이지켐 | Preparation of alkylaminosilane by reaction of chlorosilane with alkylamine mixture |
| CN113797568A (en) * | 2021-08-20 | 2021-12-17 | 洛阳中硅高科技有限公司 | Synthesis device and synthesis method of electronic grade tri (dimethylamino) silane |
| CN115677747A (en) * | 2022-10-27 | 2023-02-03 | 合肥安德科铭半导体科技有限公司 | Preparation method of monoamino substituted silane |
-
2023
- 2023-04-06 CN CN202310360653.XA patent/CN116332980A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003171384A (en) * | 2001-12-07 | 2003-06-20 | Shin Etsu Chem Co Ltd | Method for reducing chlorine content of tetrakis(dimethylamino)silane |
| CN101597301A (en) * | 2008-06-03 | 2009-12-09 | 赢创德固赛有限责任公司 | Be used for the method for aftertreatment from the saliferous residue of preparation amino-functional organosilane |
| KR20170005305A (en) * | 2015-07-03 | 2017-01-12 | 주식회사 덕산유엠티 | Process for the preparation of trisalkylaminosilane |
| KR20170025030A (en) * | 2015-08-27 | 2017-03-08 | (주)이지켐 | Preparation of alkylaminosilane by reaction of chlorosilane with alkylamine mixture |
| CN113797568A (en) * | 2021-08-20 | 2021-12-17 | 洛阳中硅高科技有限公司 | Synthesis device and synthesis method of electronic grade tri (dimethylamino) silane |
| CN115677747A (en) * | 2022-10-27 | 2023-02-03 | 合肥安德科铭半导体科技有限公司 | Preparation method of monoamino substituted silane |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117510533A (en) * | 2023-12-29 | 2024-02-06 | 全椒亚格泰电子新材料科技有限公司 | Preparation process and preparation system of diisopropylamine silane |
| CN117510533B (en) * | 2023-12-29 | 2024-04-05 | 全椒亚格泰电子新材料科技有限公司 | Preparation process and preparation system of diisopropylamine silane |
| CN117603251A (en) * | 2024-01-23 | 2024-02-27 | 铜陵安德科铭电子材料科技有限公司 | Method for efficiently preparing high-k organometallic precursor |
| CN117603251B (en) * | 2024-01-23 | 2024-03-26 | 铜陵安德科铭电子材料科技有限公司 | Method for efficiently preparing high-k organometallic precursor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN116332980A (en) | Method for preparing aminosilane with low chlorine content | |
| KR20180095553A (en) | Synthesis of di-silanylamine and polysilanylamine | |
| KR20040058348A (en) | Hexakis (monohydrocarbylamino) disilanes and method for the preparation thereof | |
| US8153832B2 (en) | Pentakis(dimethylamino) disilane precursor comprising compound and method for the preparation thereof | |
| DE602004005505T2 (en) | Process for the preparation and purification of bis (tertiary butylamino) silane | |
| KR101040325B1 (en) | Preparation of alkylaminosilane | |
| KR20120074237A (en) | Method for preparing purified aminosilane | |
| CN115677747A (en) | Preparation method of monoamino substituted silane | |
| JP2008512407A (en) | Method for producing triethanolamine | |
| CN100516075C (en) | Method for the production of silicon compounds carrying amino groups | |
| KR102072547B1 (en) | Method for purifying hexachlorodisilane | |
| TWI789503B (en) | Aminosilane compound, silicon-containing film forming composition containing the same | |
| CN108084219B (en) | Synthesis method of bis (diethylamino) silane | |
| JPS63233007A (en) | Production of chloropolysilane | |
| KR101525174B1 (en) | Method for preparing alkylaminosilanes using dichlorosilane | |
| KR101796758B1 (en) | Preparation of alkylaminosilane by reaction of chlorosilane with alkylamine mixture | |
| CN112707929A (en) | Process for preparing bis (trimethyl disilyl) lithium amide | |
| JPH0829929B2 (en) | Method for producing hydrohalogenated silane | |
| JPH04230291A (en) | Removal of chlorine compound in alkoxysilane | |
| KR20170005305A (en) | Process for the preparation of trisalkylaminosilane | |
| JP4904030B2 (en) | Method for producing borazine compound | |
| KR20160144550A (en) | Method for removing compounds having Si-O bond from aminosilanes | |
| CN108250230B (en) | Refining method of diisopropylamine silane | |
| CN117327112A (en) | Preparation method of di (diethylamino) silane | |
| CN117820350A (en) | Alkyl aminosilane and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20230627 |