CN116314428A - Terahertz array detection device based on InGaAs/AlGaAs - Google Patents

Terahertz array detection device based on InGaAs/AlGaAs Download PDF

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CN116314428A
CN116314428A CN202310325851.2A CN202310325851A CN116314428A CN 116314428 A CN116314428 A CN 116314428A CN 202310325851 A CN202310325851 A CN 202310325851A CN 116314428 A CN116314428 A CN 116314428A
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王林
姚晨禹
姜梦杰
王东
陈效双
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Shanghai Institute of Technical Physics of CAS
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Abstract

The invention discloses a terahertz array detector based on InGaAs/AlGaAs, which sequentially grows a GaAs buffer layer and Al on a GaAs substrate x Ga 1‑x As buffer layer, al x Ga 1‑x As barrier layer, delta doped bottom layer of Si, al x Ga 1‑x Isolation layer of As, in x Ga 1‑x Channel layer of As, al x Ga 1‑x Isolation layer of As, delta doped layer of Si, al x Ga 1‑x An As barrier layer, an undoped AlAs layer, an undoped GaAs layer, a Si-doped AlAs barrier layer, and a Si-doped GaAs cap layer. The source electrode and the drain electrode are respectively contacted with the two ends of the GaAs buffer layer and the two ends of each barrier layer to form ohmic contact, and a two-dimensional electron gas channel is formed between the channel layers. The two-dimensional electron gas formed by InGaAs/AlGaAs has very high electron mobility, can generate plasma resonance with terahertz waves, enhances the absorption of the terahertz waves, and improves the photoelectric conversion efficiency. The invention has the advantages that the designed array device not only can realize higher response, but also can realize better uniformity characteristic, and the line array chip based on the characteristic is beneficial to large-scale integration and expansion.

Description

Terahertz array detection device based on InGaAs/AlGaAs
Technical Field
The invention relates to a technology for detecting a component based on a semiconductor heterojunction high electron mobility transistor, in particular to a terahertz (THz) detection device based on two-dimensional electron gas (2-DEG) formed by an InGaAs/AlGaAs heterojunction.
Background
Terahertz wave radiation (0.1-10 THz) has great prospect in many subjects such as material research, safety detection, environmental monitoring and communication due to the remarkable characteristics of low photon energy, strong penetrating power, high frequency, ultrashort pulse and the like. The main method of using terahertz radiation is terahertz detection technology, which has a great influence on both basic and applied terahertz research. The terahertz wave array detector with room temperature, high speed and high sensitivity is a basic tool for the development of terahertz application technology, and is also one of key methods and main components of terahertz scientific research. A High Electron Mobility Transistor (HEMT) is a field effect transistor of a heterojunction structure, also called a modulation doped field effect transistor, a two-dimensional electron gas field effect transistor. The heterojunction is formed by two materials with different energy gaps, a triangular potential well is formed at the interface of the heterojunction, and two-dimensional electron gas in the potential well is used as a field effect tube to carry out channel adjustment. Since electrons are concentrated in the triangular potential well in such a heterostructure, the effect of spatial separation of holes and electrons can be achieved, and thus high electron mobility can be achieved. Therefore, the device has the characteristics of large transconductance, high cut-off frequency, low noise, high switching speed and the like, and has wide application prospects in microwave amplifiers and power devices.
In 1993, the nonlinear characteristics of the plasma wave can detect that the terahertz wave is first proposed by Dyakonov and Shur, and the terahertz wave excites the plasma wave in the channel, so that the nonlinear characteristics and the asymmetric boundary conditions of the plasma wave can induce a constant voltage, namely terahertz response. In 1998, the non-resonant detection format was first found in GaAs High Electron Mobility Transistors (HEMTs). Since then, a series of high electron mobility transistors and silicon-based field effect transistors have observed detection by non-resonant room temperature high sensitivity field effect self-mixing terahertz wave detectors.
The InGaAs/AlGaAs HEMT is a novel device. Two-dimensional electron gas is formed in the channel of the HEMT device, and from beginning to end, all researches on HEMTs are conducted to improve the electron mobility and the surface electron concentration in the channel. The electron mobility of the device is typically improved by changing the fermi level difference of the heterojunction material by changing the bandgap width of the material through the selection and doping of the heterojunction material. The increase and modulation of electron mobility greatly improves the performance of the device. Sequentially growing GaAs buffer layer and Al on GaAs substrate x Ga 1-x As buffer layer, al x Ga 1-x As barrier layer, delta doped bottom layer of Si, al x Ga 1-x Isolation layer of As, in x Ga 1-x Channel layer of As, al x Ga 1-x Isolation layer of As, delta doped layer of Si, al x Ga 1-x An As barrier layer, an undoped AlAs layer, an undoped GaAs layer, a Si-doped AlAs barrier layer, and a Si-doped GaAs cap layer. In the HEMT of this structure, due to doped A1 x Ga 1-x Fermi level of As with In x Ga 1-x The positions of the Fermi levels of As are different, and electrons will be extracted from Al with relatively high Fermi level x Ga 1-x One side of As material is transferred to lower In x Ga 1-x And on one side of the As material, electrons in the channel and the donor ionized impurities are spatially separated, and two-dimensional electron gas is formed in the channel. When the device is exposed to the terahertz wave band, the two-dimensional electron gas generated by the device can generate plasma resonance with the terahertz wave, so that plasma waves are generated. Due to plasmaThe nonlinear characteristics of the sub-body waves can enable the device to respond in the terahertz wave band.
Some novel two-dimensional materials also make substantial breakthroughs in the field of terahertz detection, such as high current response rate in terahertz wave bands. However, the device has limited application in the terahertz band due to the instability of the two-dimensional material and the inability to integrate in wafers. If the device is to be used in practical equipment and facilities, it is necessary to provide a stable and uniform response to the array device.
Disclosure of Invention
The purpose of the invention is that: the novel array device structure of the InGaAs/AlGaAs HEMT is provided, the response of the device in a terahertz wave band is realized, the stability of the device and the uniformity of terahertz response are improved, and the application of the terahertz device in the imaging aspect is realized.
The GaAs/AlGaAs HEMT device structure diagram of the invention is shown in figure 1, which comprises: on GaAs substrate 1, gaAs buffer layer 2 and Al are grown in sequence x Ga 1-x As buffer layer 3, al x Ga 1-x As barrier layer 4, delta doped bottom layer 6 of Si, al x Ga 1-x Isolation layer 7 of As, in x Ga 1-x Channel layer 8 of As, al x Ga 1-x Isolation layer 9 of As, delta doped layer 10 of Si, al x Ga 1-x An As barrier layer 11, an undoped AlAs layer 12, an undoped GaAs layer 13, an Si-doped AlAs barrier layer 14, and an Si-doped GaAs cap layer 15. The source electrode 5 and the drain electrode 16 are respectively contacted with two ends of the GaAs buffer layer and the barrier layers to form ohmic contacts, and a two-dimensional electron gas (2-DEG) channel 17 is formed between the channel layers. The source-drain metal electrode is AuGe/Ni/Au, wherein the AuGe alloy thickness is 100-120nm, the Ni thickness is 20-30nm, the Au thickness is 200-220nm, the device channel length is 1.5-2 μm, the width is 15-17 μm (0.1 THz), and the width is 5-6 μm (0.3 THz). The high mobility 2-DEG created by the InGaAs/AlGaAs heterojunction in this structure has very high stability as a conductive channel. The thickness of the GaAs buffer layer 2 is 200-210nm, al x Ga 1-x The thickness of the As buffer layer 3 is 250-300nm, al x Ga 1-x The As barrier layer 4 has a thickness of 15-20nm and SiDelta doped bottom layer 6, al x Ga 1-x The As isolation layer 7 has a thickness of 6-10nm, in x Ga 1-x The thickness of the As channel layer 8 is 5-10nm, al x Ga 1-x The thickness of the As isolation layer 9 is 6-10nm, the thickness of the Si delta doped layer 10 and the thickness of the Al x Ga 1-x The thickness of the As barrier layer 11 is 22-25nm, the thickness of the undoped AlAs layer 12 is 1.5-2nm, the thickness of the undoped GaAs layer 13 is 15-20nm, the thickness of the Si-doped AlAs barrier layer 14 is 1.5-3nm, and the thickness of the Si-doped GaAs cap layer 15 is 25-30nm.
The method for realizing the purpose of the invention comprises the following steps: the two-dimensional electron gas formed by InGaAs/AlGaAs has very high electron mobility, can generate plasma resonance with THz waves, enhances the absorption of the THz waves, and improves the photoelectric conversion efficiency of the THz waves. Therefore, the array device can generate plasma waves by utilizing the coupling effect of THz waves and the 2-DEG of the device channel, and realize response signals of the device in a terahertz wave band due to the nonlinear characteristics of the plasma waves; the material stability of the InGaAs/AlGaAs is higher than that of other two-dimensional materials, so that the terahertz response rate of the HEMT device is relatively very stable, and meanwhile, the uniformity among array devices can be ensured due to the special structural design of the HEMT device; because the response of the device in the terahertz wave band is stable, the imaging of the device in the terahertz wave band can be realized.
The invention further provides a preparation and design method of the InGaAs/AlGaAs HEMT device, which comprises the following specific operation steps:
(1) The above layers of material are grown on the GaAs substrate using MBE. The thickness of the GaAs buffer layer 2 is 200-210nm, al x Ga 1-x The thickness of the As buffer layer 3 is 250-300nm, al x Ga 1-x Delta doped bottom layer 6 of Si and Al with the thickness of As barrier layer 4 of 15-20nm x Ga 1-x The As isolation layer 7 has a thickness of 6-10nm, in x Ga 1-x The thickness of the As channel layer 8 is 5-10nm,
Al x Ga 1-x The thickness of the As isolation layer 9 is 6-10nm, the thickness of the Si delta doped layer 10 and the thickness of the Al x Ga 1-x As
The barrier layer 11 has a thickness of 22-25nm, the undoped AlAs layer 12 has a thickness of 1.5-2nm, the undoped GaAs layer 13 has a thickness of 15-20nm, and the Si-doped AlAs barrier layer 14 has a thickness of
1.5-3nm, and the thickness of the Si-doped GaAs cap layer 15 is 25-30nm.
(2) The cleaning method comprises the steps of sequentially carrying out ultrasonic treatment on a complete 4inch wafer in acetone and isopropanol for about 5 minutes respectively for two times, carrying out ultrasonic treatment by deionized water and flushing for four to five times, and finally drying the cleaned material by a nitrogen gun.
(3) Etching the trench by ultraviolet lithography, and then etching with wet etching method with etching depth of 110-130nm for about 28-30s, wherein the etching solution has a composition ratio of H 3 PO 4 :
H 2 O 2 :H 2 O=1:1:25, thereby obtaining a two-dimensional electron gas channel.
(4) And (3) cleaning the corroded sample in the mode of the step (2).
(5) Photoetching the source and drain ends of the device by utilizing an ultraviolet photoetching method, then evaporating gold by utilizing an electron beam evaporation method, wherein the evaporated metal materials are AuGe/Ni/Au in sequence, and the thicknesses of the AuGe/Ni/Au are respectively 100-120,
20-30、200-220nm。
(6) Then stripping with N-methylpyrrolidone (NMP) stripping solution, and heating in water bath
The metal and the material are automatically separated after about 60 minutes.
(7) And (3) annealing by using a rapid annealing furnace, starting nitrogen for 60-70s to fill the cavity before heating, heating to 200-210 ℃ for 10-15s to preheat after 15-20s, heating to 430-450 ℃ after 20-25s, and maintaining at-430450 ℃ for 30-35s to finish annealing. And then IV testing is carried out on two ends of the device, so that the ohmic contact of the device is confirmed to be good.
The process steps of the invention are the current mature standard process in China, and the process is simpler. The technological parameters are obtained through a plurality of experiments, and are very representative.
Drawings
Fig. 1 is a side view of an InGaAs/AlGaAs HEMT array device structure of the invention.
Fig. 2 is a schematic diagram of a 0.1THz structure of an InGaAs/AlGaAs HEMT array device of the invention. The overall structure of the antenna is shown in figure a, and the fine structure at the channel is shown in figure b.
Fig. 3 is a schematic diagram of a 0.3THz structure of an InGaAs/AlGaAs HEMT array device of the invention. The overall structure of the antenna is shown in figure a, and the fine structure at the channel is shown in figure b.
Fig. 4 is a response current curve of the InGaAs/AlGaAs HEMT array device of the present invention with bias voltage.
Fig. 5 shows response uniformity of the InGaAs/AlGaAs HEMT array device of the present invention under irradiation of electromagnetic waves having frequencies of 0.1THz and 0.3THz.
Fig. 6 is a response time of the InGaAs/AlGaAs HEMT array device of the invention at 0.1 THz.
Fig. 7 is a response time of the InGaAs/AlGaAs HEMT array device of the present invention at 0.3THz.
Detailed Description
Next we focus on the design of the antenna structure of the invention and some applications in terahertz imaging. By the above device fabrication method we have obtained an array device with a side structure as shown in fig. 1. In order to ensure uniformity and responsiveness of the array device, a novel grid-shaped antenna structure is designed in a simulation mode, and the resonant frequency of the novel grid-shaped antenna structure is designed to be 0.1THz and 0.3THz. FIG. 2a shows the overall structure of the antenna of 0.1THz, and FIG. 2b shows the fine structure at the antenna channel, where L 1 Has a width of 345-350 μm and L 2 Has a width of 237-240 μm, D 1 Has a width of 15-20 μm, D 2 Has a width of 11-15 μm, D 3 Has a width of 25-30 μm, D 4 The width of (2) is 24-30 μm. Also, FIG. 3a shows the overall structure of the antenna of 0.3THz, and FIG. 3b shows the fine structure at the channel, where J 1 Is 69-70 μm and J 2 Has a width of 180-185 μm, I 1 Is 10-12 μm in width, I 2 Is 5-7 μm in width, I 3 Is 11-15 μm in width, I 4 The width of (2) is 25-30 μm. The low frequency microwave is generated by a microwave generator, the electromagnetic wave of 0.1 and 0.3THz is generated by a multiplication link, and the optical response is recorded by an oscilloscope after a lock-in amplifier (LIA) and a low noise voltage preamplifier. The specific operation is that the pulse signal modulation frequency of the microwave source is used as the reference signal source of the phase-locked amplifier and the oscilloscope, and the photoelectric signal of the detector amplified by the pre-amplifier is connected to the input port of the phase-locked amplifier, and the output signal is the signal amplified again by phase locking. The light response at both frequencies varies with bias voltage as shown in fig. 4a (0.1 THz) and b (0.3 THz), where the light source is about 50cm from the array detector. In FIG. 4, the spacing between the channels is 2 μm, and the channel width is D 1 (15 μm, 17 μm, 20 μm) and I 2 (5 μm, 6 μm, 7 μm) devices of different widths were prepared, respectively. To verify the uniformity of the devices we designed, 12 devices of the same channel width were randomly selected and tested by the same method, and the array devices showed good uniformity at both 0.1THz and 0.3THz as shown in fig. 5, with the light response error between devices kept within 10%. Fig. 6 is a graph of the response time of a 0.1THz array terahertz detector at zero bias (the inset shows the falling edge), typically calculated as the amount of time required for a single pulse of light to increase from 10% to 90% or decrease from 90% to 10%, device on time of about 0.9 mus, off time of about 0.7 mus, and device response time fast enough for high speed devices. Fig. 7 is a graph of the response time of a 0.3THz array terahertz detector at zero bias (the inset shows the falling edge), with a device on time of about 1 mus and an off time of about 0.8 mus. The terahertz response of the device is relatively stable, and long-time terahertz data acquisition and terahertz imaging can be realized.

Claims (3)

1. A terahertz array detector based on InGaAs/AlGaAs comprises a GaAs substrate (1), a GaAs buffer layer (2), and Al x Ga 1-x As buffer layer (3), al x Ga 1-x An As barrier layer (4), a delta doped bottom layer (6) of Si, al x Ga 1-x Isolation layer of As (7), in x Ga 1-x As ofChannel layer (8), al x Ga 1-x An As isolation layer (9), a Si delta doped layer (10), al x Ga 1-x An As barrier layer (11), an undoped AlAs layer (12), an undoped GaAs layer (13), an Si-doped AlAs barrier layer (14) and an Si-doped GaAs cap layer (15); the terahertz array detection device is characterized by comprising the following structure:
a GaAs buffer layer (2) and Al are sequentially grown on a GaAs substrate (1) x Ga 1-x As buffer layer (3), al x Ga 1-x An As barrier layer (4), a delta doped bottom layer (6) of Si, al x Ga 1-x Isolation layer of As (7), in x Ga 1-x A channel layer (8) of As, al x Ga 1-x An As isolation layer (9), a Si delta doped layer (10), al x Ga 1-x An As barrier layer (11), an undoped AlAs layer (12), an undoped GaAs layer (13), an Si-doped AlAs barrier layer (14) and an Si-doped GaAs cap layer (15); the source electrode (5) and the drain electrode (16) are respectively positioned at the two ends of the GaAs buffer layer and each barrier layer to form ohmic contact, and a two-dimensional electron gas channel is formed between the channel layers;
the thickness of the GaAs buffer layer (2) is 200-210nm, al x Ga 1-x The thickness of the As buffer layer (3) is 250-300nm;
said Al x Ga 1-x The thickness of the As barrier layer (4) is 15-20nm;
the delta doped bottom layer (6) of Si and Al x Ga 1-x The thickness of the isolation layer (7) of As is 6-10nm;
the In is x Ga 1-x The thickness of the channel layer (8) of As is 5-10nm;
said Al x Ga 1-x The thickness of the isolation layer (9) of As is 6-10nm;
the delta doped layer (10) of Si and Al x Ga 1-x The thickness of the As barrier layer (11) is 22-25nm;
the thickness of the undoped AlAs layer (12) is 1.5-2nm;
the thickness of the undoped GaAs layer (13) is 15-20nm;
the thickness of the AlAs barrier layer (14) doped with Si is 1.5-3nm;
the thickness of the Si-doped GaAs cap layer (15) is 25-30nm.
2. The InGaAs/AlGaAs based terahertz array detecting device according to claim 1, wherein: the terahertz array detection device sequentially grows a buffer layer and a barrier layer on a GaAs substrate by adopting a molecular beam epitaxy technology, a source electrode and a drain electrode are in contact with the barrier layer and the buffer layer to form ohmic contact, two-dimensional electron gas (17) is formed between the channel layers, and a source electrode and a drain electrode of the terahertz array detection device are AuGe/Ni/Au, wherein the AuGe alloy thickness is 100-120nm, the Ni thickness is 20-30nm, the Au thickness is 200-220nm, the device channel length is 1.5-2 mu m, the device frequency is 0.1THz, the width is 15-17 mu m, and the device frequency is 0.3THz, and the width is 5-6 mu m.
3. The InGaAs/AlGaAs based terahertz array detecting device according to claim 1, wherein: the source electrode (5) and the drain electrode (16) are of a grid antenna structure, and L is arranged in the grid antenna structure of 0.1THz 1 Has a width of 345-350 μm and L 2 Has a width of 237-240 μm, D 1 Has a width of 15-20 μm, D 2 Has a width of 11-15 μm, D 3 Has a width of 25-30 μm, D 4 Is 24-30 μm in width; 0.3THz in the lattice antenna structure, J 1 Is 69-70 μm and J 2 Has a width of 180-185 μm, I 1 Is 10-12 μm in width, I 2 Is 5-7 μm in width, I 3 Is 11-15 μm in width, I 4 The width of (2) is 25-30 μm.
CN202310325851.2A 2023-03-30 2023-03-30 Terahertz array detection device based on InGaAs/AlGaAs Pending CN116314428A (en)

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