CN116314321A - HEMT radio frequency device and manufacturing method thereof - Google Patents
HEMT radio frequency device and manufacturing method thereof Download PDFInfo
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- CN116314321A CN116314321A CN202310295457.9A CN202310295457A CN116314321A CN 116314321 A CN116314321 A CN 116314321A CN 202310295457 A CN202310295457 A CN 202310295457A CN 116314321 A CN116314321 A CN 116314321A
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Abstract
The invention discloses a HEMT radio frequency device and a manufacturing method thereof, wherein the HEMT radio frequency device comprises a substrate, a magnetostriction layer, an HEMT epitaxial material layer, a source electrode, a drain electrode and a grid electrode which are arranged on the HEMT epitaxial material layer from bottom to top, wherein the HEMT epitaxial material layer comprises a nitride heterojunction; the magnetostrictive layer comprises a plurality of protruding units, and forms a meshed structure with the HEMT epitaxial material layer through the protruding units; the magnetostriction layer is formed by magnetostriction dielectric materials, the protruding units of the magnetostriction dielectric materials deform under the action of an alternating magnetic field introduced by radio frequency signal input to act on the HEMT epitaxial material layer by stress, so that lattice deformation of the channel layer/barrier layer is hindered, dynamic resistance of the nitride heterojunction is kept unchanged, the current collapse effect is effectively restrained through stress regulation and control, and the performance and stability of the device are improved.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a HEMT radio frequency device and a manufacturing method thereof.
Background
The third generation semiconductor material GaN has a large forbidden band width (3.4 eV) and a high electron saturation rate (2 multiplied by 10) 7 cm/s), high breakdown field (1X 10) 10 ～3×10 10 V/cm), higher thermal conductivity, corrosion resistance, radiation resistance and other excellent performances become current research hot spots, and have wide application prospects. In particular to an HEMT with an AlGaN/GaN heterojunction structure, has the advantages of high frequency, high power density and high working temperature, and is a solid-state microwave power device and a power electronic deviceThe direction of development of the piece.
In HEMT device application, the output current of the device is greatly reduced when the source-drain voltage of the GaN HEMT is higher; and the output power of the device is obviously reduced (RFpowerexpression) under the RF signal, and meanwhile, the output power density and the power additional efficiency are also reduced (RFdispersion), so that the performance degradation of the device caused by the current collapse phenomenon is limited, and the performance of the device is limited.
Essentially, the RF current collapse is caused by the change in series resistance between the source, gate, and drain. The negative bias applied to the gate establishes an electric field on the AlGaN/GaN heterojunction in the same direction as the piezoelectric polarized electric field, and the increase in the electric field increases the tensile stress of the AlGaN barrier layer under the gate, thereby increasing the compressive stress between the gate, the source and the drain, reducing the polarized charge density, and increasing the series resistance between them. The reduction of the polarization charge in these regions can only be offset by the polarization charge or trap effect, which is slower in response speed, and therefore the output current is reduced without following the frequency of the voltage change.
In order to inhibit current collapse of a GaN HEMT device and power compression in RF application, one method is to grow a silicon nitride passivation layer to improve interface states of an interface between AlGaN and the passivation layer to regulate trap, and the other method is to regulate a doping state of a buffer layer below a channel layer to regulate off-state leakage current to regulate trap of EPI in an epitaxial material, and a method for manufacturing a micro-leakage channel is used to improve current reduction caused by the trap so as to inhibit current collapse. However, at present, the two methods only play a role in inhibiting the current collapse, and the current collapse introduced by the existence of the pulling during the operation of the device is not solved.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention provides a HEMT radio frequency device and a manufacturing method thereof, which effectively inhibit the current collapse effect through stress regulation.
In order to achieve the above object, the technical scheme of the present invention is as follows:
the HEMT radio frequency device comprises a substrate, a magnetostriction layer, an HEMT epitaxial material layer, a source electrode, a drain electrode and a grid electrode, wherein the source electrode, the drain electrode and the grid electrode are arranged on the HEMT epitaxial material layer; the magnetostrictive layer comprises a plurality of protruding units, and forms an engaged structure with the HEMT epitaxial material layer through the protruding units; the magnetostrictive layer is formed by magnetostrictive dielectric materials, and the plurality of protruding units deform under the action of alternating magnetic fields introduced by radio frequency signal input to act on the HEMT epitaxial material layer by stress.
Optionally, the plurality of protruding units are arranged in an array, and the top ends of the adjacent protruding units are provided with intervals of 5-50 nm.
Optionally, the diameter of the orthographic projection pattern or the diameter of the circumcircle of the protruding unit on the substrate is 1-100 nm.
Optionally, the protruding unit is columnar, conical, spherical or frustum-shaped.
Optionally, the height of the protruding unit is 10-200 nm.
Optionally, the magnetostrictive dielectric material is NiFe 2 O 4 Or magnetostrictive ferrite containing NiO.
Optionally, the HEMT epitaxial material layer comprises a GaN layer and a barrier layer arranged on the GaN layer, and the GaN layer and the barrier layer form a heterojunction; the material of the barrier layer is AlGaN, alN, inAlGaN or InAlN.
Optionally, a nucleation layer is further arranged between the magnetostrictive layer and the GaN layer, and the nucleation layer is made of AlN or AlGaN, wherein the AlN thickness is 0-10 nm, and the AlGaN thickness is 5-50 nm.
Optionally, the plurality of protruding units are arranged at intervals or are arranged continuously at the bottom in a connecting way; further, the plurality of protruding units are arranged in a zigzag manner, and form a zigzag meshing structure with the GaN layer.
Optionally, the substrate is silicon (Si), silicon carbide (SiC), or sapphire (saphire).
Optionally, the HEMT epitaxial material layer further includes a cap layer disposed on the barrier layer, the source electrode, the drain electrode and the gate electrode are disposed on the cap layer, and the gate electrode is disposed between the source electrode and the drain electrode.
Optionally, the thickness of the HEMT epitaxial material layer ranges from 300nm to 2um.
Optionally, the HEMT epitaxial material layer comprises a passivation layer covering the HEMT epitaxial material layer, a source electrode, a drain electrode and a grid electrode, wherein the source electrode and the drain electrode are connected with lead-out metal penetrating through the passivation layer; the passivation layer is a lamination of multiple layers of dielectric materials.
The manufacturing method of the HEMT radio frequency device comprises the following steps:
1) Forming a magnetostrictive material layer on a substrate;
2) Patterning the magnetostrictive material layer by adopting an etching process to form a magnetostrictive layer with a plurality of convex units;
3) Growing a HEMT epitaxial material layer above the magnetostrictive material layer;
4) And manufacturing a source electrode, a drain electrode and a grid electrode on the HEMT epitaxial material layer.
Optionally, in step 1), the magnetostrictive material layer is formed by using a process of tearing and transferring, CVD, ALD, PECVD, LPCVD, sol-gel method or molecular beam epitaxy method; in the step 2), a patterned photoresist layer is formed on the magnetostrictive material layer through a photoetching process, and a dry etching process is adopted for etching.
The beneficial effects of the invention are as follows:
the magnetostrictive material is combined with the occlusion structure to be applied to the structural improvement of the HEMT material, when the device works, radio frequency signals are input, an alternating magnetic field is introduced, the magnetostrictive convex unit deforms under the action of the magnetic field, stress is applied to the HEMT epitaxial material layer, the lattice deformation of the channel layer/the barrier layer is hindered, the dynamic resistance of the nitride heterojunction is kept unchanged, the current collapse effect is effectively restrained through stress regulation and control, and the performance and the stability of the device are improved.
Drawings
Fig. 1 is a schematic cross-sectional structure of a HEMT radio frequency device of embodiment 1;
fig. 2 is a process flow diagram of the HEMT radio frequency device of embodiment 1;
fig. 3 is a graph of dc electrical tests of HEMT radio frequency devices of example 1 and comparative example 1;
fig. 4 is a schematic diagram of a partial cross-sectional structure of a HEMT radio-frequency device of embodiment 2;
fig. 5 is a schematic top view of the magnetostrictive layer of fig. 4 (b), showing the positional relationship between the protrusion unit and the source, drain and gate.
Detailed Description
The invention is further explained below with reference to the drawings and specific embodiments. The drawings of the present invention are merely schematic to facilitate understanding of the present invention, and specific proportions thereof may be adjusted according to design requirements. The definition of the context of the relative elements and the front/back of the figures described herein should be understood by those skilled in the art to refer to the relative positions of the elements and thus all the elements may be reversed to represent the same elements, which are all within the scope of the present disclosure.
Example 1
Referring to fig. 1, the HEMT radio frequency device of embodiment 1 includes, from bottom to top, a substrate 1, a magnetostrictive layer 2, an AlN nucleation layer 3, a GaN HEMT epitaxial material layer 4, and further includes a source S, a drain D, a gate G, and a passivation layer 5 disposed on the HEMT epitaxial material layer 4. The HEMT epitaxial material layer 4 includes a GaN layer 31, an AlGaN layer 32, and a GaN cap layer 33 sequentially provided on the nucleation layer 3, the GaN layer 31, the AlGaN layer 32 forming a heterojunction. Magnetostrictive layer 2 is made of NiFe 2 O 4 The material is formed with a plurality of protruding units 21, the protruding units 21 are in a zigzag shape and are arranged in a matrix, the magnetostrictive layer 2 and the GaN layer 31 form a zigzag structure through the protruding units 21, and the magnetostrictive layer is deformed under the action of an alternating magnetic field introduced by the input of radio frequency signals to act on the HEMT epitaxial material layer by stress.
In this embodiment, the serration of the protrusion unit 21 means that the width of the protrusion unit is gradually reduced from the bottom to the top to form a serration like a cone, and the top has a space of 5 to 50nm, for example, 20nm. The orthographic projection pattern of the protruding unit 21 on the substrate 1 may be a circle, square, polygon or other irregular pattern, and its circumscribed circle has a diameter of 1-100 nm, for example 20nm. The height of the protruding units 21 is 10 to 200nm, for example 20nm. The protruding units 21 are arranged in a matrix, i.e. have mutually perpendicular rows and columns, wherein one of the rows or columns coincides with the square arrangement of the source S, drain D and gate G, and in the cross-sectional direction as shown in fig. 1, the protruding units 21 are arranged in regular saw teeth and connected at their bottom ends. The nucleation layer 3 is deposited on the surface of the magnetostrictive layer 2, the thickness of the nucleation layer is 10nm, and the surface of the nucleation layer 3 maintains the appearance of the surface of the magnetostrictive layer 2. And depositing a GaN layer 31 on the nucleation layer 3, so that the GaN layer 31 is in saw tooth engagement with the magnetostrictive layer 2.
When the HEMT radio frequency device works, gaN/AlGaN is subjected to lattice deformation under the action of a strong electric field, defects in the material and at heterojunction interfaces are increased, free electrons of two-dimensional electron gas in a channel can be captured by the defects, and the problems of dynamic resistance increase, current collapse and the like of the device are caused. Magnetostrictive materials can change in size under the influence of a magnetic field. The magnetostrictive material and the GaN layer are adopted to form a saw tooth engagement structure, when the device works, radio frequency signals are input, an alternating magnetic field is introduced, the magnetostrictive saw teeth formed by the convex units 21 deform under the action of the magnetic field, stress is applied to GaN, lattice deformation of GaN and AlGaN is hindered, dynamic resistance of an AlGaN/GaN heterojunction is kept unchanged, and a current collapse effect is effectively restrained through stress regulation and control.
The following describes a method for manufacturing the HEMT radio frequency device with reference to fig. 2, which includes the following steps:
1) Growing a 20nm NiFe2O4 magnetostrictive material layer 2' on a silicon substrate by using MBE;
2) Coating a photoresist on the magnetostrictive material layer, patterning the photoresist by exposure and development, etching the magnetostrictive material layer by taking the photoresist pattern as a mask to form convex units 21 which are arranged in a matrix, and stripping the photoresist; in the embodiment, dry etching is adopted, and the taper etching shape required by NiFe2O4 is completed by adjusting profile (photoresist or SiN medium) of a mask layer;
3) Evaporating a 10nm AlN nucleation layer by using a measure and control sputtering method; in other implementations, alGaN may also be used.
4) Growing an HEMT epitaxial material layer by adopting an MOCVD process, wherein the HEMT epitaxial material layer sequentially comprises a GaN layer, an AlGaN layer and a GaN cap layer, and the thicknesses of the GaN layer, the AlGaN layer and the GaN cap layer are respectively 1.5um,20nm and 2nm;
5) Manufacturing a gate pattern by utilizing photoetching, realizing gate etching by utilizing dry etching, and manufacturing a source drain gate electrode; wherein a Ti/Al/Ni/Au stack is deposited with a thickness of 20nm/200nm/30nm/100nm and annealed at 850 ℃ for 50s to form an ohmic contact as a source/drain electrode with rc=0.5 ohm. The gate electrode metallization is made of Ni/Au. Selection of gate metal: the structure has a larger work function relative to AlGaN and GaN so as to ensure that electrons in a channel of a grid region can be exhausted through the difference of work functions of the AlGaN and the GaN; a multi-layer passivation layer is adopted for forming a T-shaped gate structure by referring to a conventional process, 600nm SiN is deposited by PECVD as a top passivation layer, and a PAD opening is etched by photoetching; and (5) finishing the manufacture of the device.
The source electrode S, the drain electrode D, and the gate electrode G each cover the plurality of protruding units 21 in the arrangement direction thereof.
Comparative example
The HEMT radio frequency device of the comparative example differs from that of example 1 in that: no magnetostrictive layer is provided. The remainder was the same as in example 1.
The HEMT radio frequency devices of example 1 and comparative example 1 were both subjected to direct current electrical tests, the test results are shown in fig. 3, the abscissa represents the drain voltage Vd, the ordinate represents the drain current Id, and under static test conditions, the initial currents id1@vg/vd=0/0V in the unstressed state, and IV characteristic curves corresponding to currents id2@vg/vd= -10/0V and id3@vg/vd= -10/100V were measured. The amount of current collapse was characterized by Id2/Id1 and Id3/Id 1. The device manufactured by the scheme is obviously slowed down compared with Id2 and Id3 in a stress state of the device manufactured by a conventional process, so that the current collapse phenomenon is effectively improved by the scheme.
Example 2
Example 2 exemplifies other patterns of magnetostrictive layers, as shown in fig. 4, wherein:
the magnetostrictive layer 2a of fig. 4a differs from that of embodiment 1 in that the raised units 21a only occupy a certain thickness, i.e. the magnetostrictive layer 2a remains with a part of the entire thickness, and the raised units 21a are not etched to the bottom of the magnetostrictive layer 2 a;
the magnetostrictive layer 2b of fig. 4b is composed of a plurality of columnar protruding units 21b which are arranged at intervals, and in combination with fig. 5, the orthographic projection of the columnar protruding units 21b on the substrate is hexagonal, and the direction of rows or columns of the columnar protruding units arranged in a matrix manner is consistent with the arrangement direction of the source S, the gate G and the drain D;
the magnetostrictive layer 2c of fig. 4c is composed of a plurality of discrete, spaced apart frustum-shaped convex units 21c, the top of the frustum-shaped convex units 21b having a planar surface;
the magnetostrictive layer 2d of fig. 4d consists of several hemispherical convex elements 21d joined at the bottom.
The above embodiment is only used for further illustrating a HEMT radio frequency device and a manufacturing method thereof, but the invention is not limited to the embodiment, and any simple modification, equivalent variation and modification of the above embodiment according to the technical substance of the invention falls within the protection scope of the technical proposal of the invention.
Claims (10)
1. The HEMT radio frequency device is characterized in that: the HEMT epitaxial material comprises a substrate, a magnetostriction layer, an HEMT epitaxial material layer, a source electrode, a drain electrode and a grid electrode, wherein the source electrode, the drain electrode and the grid electrode are arranged on the HEMT epitaxial material layer; the magnetostrictive layer comprises a plurality of protruding units, and forms an engaged structure with the HEMT epitaxial material layer through the protruding units; the magnetostrictive layer is formed by magnetostrictive dielectric materials, and the plurality of protruding units deform under the action of alternating magnetic fields introduced by radio frequency signal input to act on the HEMT epitaxial material layer by stress.
2. The HEMT radio frequency device of claim 1, wherein: the plurality of protruding units are arranged in an array manner, and the top ends of the adjacent protruding units are provided with intervals of 5-50 nm.
3. The HEMT radio frequency device of claim 1, wherein: the diameter of the orthographic projection pattern of the protruding unit on the substrate or the diameter of the circumcircle is 1-100 nm.
4. The HEMT radio frequency device of claim 1, wherein: the protruding units are columnar, conical, spherical or frustum-shaped.
5. The HEMT radio frequency device of claim 1, wherein: the height of the protruding units is 10-200 nm.
6. The HEMT radio frequency device of claim 1, wherein: the magnetostrictive dielectric material is NiFe 2 O 4 Or magnetostrictive ferrite containing NiO.
7. The HEMT radio frequency device of claim 1, wherein: the HEMT epitaxial material layer comprises a GaN layer and a barrier layer arranged on the GaN layer, and the GaN layer and the barrier layer form a heterojunction; the material of the barrier layer is AlGaN, alN, inAlGaN or InAlN.
8. The HEMT radio frequency device of claim 7, wherein: and a nucleation layer is further arranged between the magnetostrictive layer and the GaN layer, and the nucleation layer is made of AlN or AlGaN, wherein the AlN thickness is 0-10 nm, and the AlGaN thickness is 5-50 nm.
9. A method of fabricating a HEMT radio frequency device according to any one of claims 1-8, comprising the steps of:
1) Forming a magnetostrictive material layer on a substrate;
2) Patterning the magnetostrictive material layer by adopting an etching process to form a magnetostrictive layer with a plurality of convex units;
3) Growing a HEMT epitaxial material layer above the magnetostrictive material layer;
4) And manufacturing a source electrode, a drain electrode and a grid electrode on the HEMT epitaxial material layer.
10. The method of manufacturing according to claim 9, wherein: in the step 1), the magnetostrictive material layer is formed by adopting a tearing transfer process, a CVD, ALD, PECVD, LPCVD process, a sol-gel process or a molecular beam epitaxy process; in the step 2), a patterned photoresist layer is formed on the magnetostrictive material layer through a photoetching process, and a dry etching process is adopted for etching.
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