CN116288256B - Atomized vapor deposition device and atomized vapor deposition method - Google Patents
Atomized vapor deposition device and atomized vapor deposition method Download PDFInfo
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- CN116288256B CN116288256B CN202310552762.1A CN202310552762A CN116288256B CN 116288256 B CN116288256 B CN 116288256B CN 202310552762 A CN202310552762 A CN 202310552762A CN 116288256 B CN116288256 B CN 116288256B
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- 238000007740 vapor deposition Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000000151 deposition Methods 0.000 claims abstract description 107
- 230000008021 deposition Effects 0.000 claims abstract description 98
- 238000000889 atomisation Methods 0.000 claims abstract description 43
- 239000002994 raw material Substances 0.000 claims abstract description 35
- 239000007788 liquid Substances 0.000 claims abstract description 33
- 239000003595 mist Substances 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 36
- 239000007789 gas Substances 0.000 claims description 34
- 239000012159 carrier gas Substances 0.000 claims description 29
- 239000010408 film Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 13
- 210000001503 joint Anatomy 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- WDJHALXBUFZDSR-UHFFFAOYSA-M acetoacetate Chemical compound CC(=O)CC([O-])=O WDJHALXBUFZDSR-UHFFFAOYSA-M 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000443 aerosol Substances 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 14
- 238000006243 chemical reaction Methods 0.000 abstract description 13
- 230000007797 corrosion Effects 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000000428 dust Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- PNJWIWWMYCMZRO-UHFFFAOYSA-N 4-penten-2-one Chemical compound CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- WDJHALXBUFZDSR-UHFFFAOYSA-N Acetoacetic acid Natural products CC(=O)CC(O)=O WDJHALXBUFZDSR-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- WOWBFOBYOAGEEA-UHFFFAOYSA-N diafenthiuron Chemical compound CC(C)C1=C(NC(=S)NC(C)(C)C)C(C(C)C)=CC(OC=2C=CC=CC=2)=C1 WOWBFOBYOAGEEA-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides an atomization vapor deposition device and an atomization vapor deposition method, wherein the atomization vapor deposition device comprises a deposition cavity; the bottom of the deposition cavity is provided with a tray, and the top surface of the tray is positioned in the inner cavity of the deposition cavity; a laser introducing window is arranged on the outer side wall of the deposition cavity, and a laser source is arranged on one side of the laser introducing window away from the deposition cavity; the deposition cavity is provided with a fog phase inlet and an exhaust port, and is connected with an atomization device through the fog phase inlet; the atomizing device comprises an atomizing cavity and a base for containing ultrasonic media, and an ultrasonic piece is arranged at the bottom end of the base. The invention introduces the laser light source to provide energy for the deposition reaction process, and can realize the low-temperature chemical vapor deposition without damage or with low damage; meanwhile, the ultrasonic part is directly contacted with the ultrasonic medium, so that the corrosion of raw material liquid to the ultrasonic part can be avoided, and the service life of the ultrasonic part is prolonged.
Description
Technical Field
The invention belongs to the technical field of vapor deposition, and relates to an atomization vapor deposition device and an atomization vapor deposition method.
Background
Chemical vapor deposition (Chemical Vapor Deposition, CVD for short) refers to the process of synthesizing coatings or nanomaterials by reacting chemical gases or vapors on the surface of a substrate, and is the most widely used technique in the semiconductor industry for depositing a wide variety of materials, including a wide range of insulating materials, most metallic materials and metallic alloy materials.
CN114855145a discloses a chemical vapor deposition furnace, which comprises a furnace body, a graphite heating body positioned in the furnace body, a thermal insulation peripheral sleeve encircling the side part of the graphite heating body and a thermal insulation bottom bracket positioned below the bottom part of the graphite heating body, wherein the thermal insulation peripheral sleeve and the thermal insulation bottom bracket are positioned in the thermal insulation furnace body. CN107604340a discloses a chemical vapor deposition furnace, which comprises a crucible assembled from bottom to top for holding raw materials, a crucible cover used with the crucible, a deposition chamber, a receiving box and an air duct; the chemical vapor deposition furnace further comprises a first heater for heating the crucible, a dust collecting chamber is arranged in the material collecting box, a dust collecting chamber cover plate is arranged above the dust collecting chamber in a covering mode, and a third through hole for communicating the dust collecting chamber with the material collecting box is formed in the dust collecting chamber cover plate. However, the conventional chemical vapor deposition apparatus and method usually perform deposition at a very high temperature, and the high temperature may damage the substrate or the deposited layer, resulting in defects.
Moreover, many CVD apparatuses require deposition in a vacuum state, and deposition costs are high. Atomized vapor deposition (Mist-CVD) systems have received great attention due to their advantages of non-vacuum operation, low cost, simple equipment, convenient operation, etc. However, in the existing atomized vapor deposition apparatus, the used atomized member is often in direct contact with the liquid raw material, and the liquid raw material corrodes the atomized member, so that the service life of the atomized member is lost.
Therefore, there is a need to develop an atomized vapor deposition apparatus capable of reducing deposition temperature and damage to a substrate and a deposited film, and capable of extending the service life of an atomizer.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide an atomization vapor deposition device and an atomization vapor deposition method. The invention introduces the laser light source to provide energy for the deposition reaction process, directly irradiates the fog to carry out the deposition reaction, so that the raw material fog can react at low temperature and is difficult to damage the substrate and the deposited film, thereby realizing the low-temperature chemical vapor deposition without damage or with low damage and greatly improving the quality of the deposited film; meanwhile, the ultrasonic part is directly contacted with the ultrasonic medium, and ultrasonic waves are transmitted to the atomization cavity through the ultrasonic medium, so that raw material liquid in the atomization cavity can be excited to form fog, the corrosion of the raw material liquid on the ultrasonic part can be avoided, and the service life of the ultrasonic part is prolonged.
To achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the present invention provides an atomized vapor deposition apparatus comprising a deposition chamber;
the bottom of the deposition cavity is provided with a tray, and the top surface of the tray is positioned in the inner cavity of the deposition cavity; the outer side wall of the deposition cavity is provided with a laser introducing window, one side of the laser introducing window, which is far away from the deposition cavity, is provided with a laser source, and laser emitted by the laser source is higher than and parallel to the top surface of the tray;
the deposition cavity is provided with a fog phase inlet and an exhaust port, and is connected with an atomization device through the fog phase inlet;
the atomizing device comprises an atomizing cavity and a base for containing ultrasonic media, the base is of a hollow structure with an opening at the top end, and an ultrasonic piece is arranged at the bottom end of the base; the bottom of the atomizing cavity is positioned in the inner cavity of the base, and the atomizing cavity is communicated with an air source.
The invention provides an atomization vapor deposition device, which is characterized in that a laser light source is introduced to provide energy for a deposition reaction process, so that raw material mist can react at low temperature, a film is deposited on the surface of a substrate on a tray, and the laser light source directly irradiates the mist to perform the deposition reaction, so that the substrate and the deposited film are difficult to damage, thereby realizing low-temperature chemical vapor deposition without damage or with low damage, even realizing room-temperature chemical vapor deposition, greatly improving the quality of the deposited film, and being green and energy-saving;
simultaneously, atomizing device includes atomizing chamber and is used for holding the base of supersound medium to with the supersound spare set up in the bottom of base makes supersound spare direct contact supersound medium, and the ultrasonic wave that supersound spare sent can pass through the supersound medium and transmit to atomizing chamber, thereby can arouse the raw materials liquid in the atomizing chamber and form fog, and this can avoid the corrosion of raw materials liquid to supersound spare, extension supersound spare life.
The kind of the ultrasonic medium is not particularly limited in the present invention, and may be exemplified by pure water.
Optionally, part or all of the tray is disposed in the interior cavity of the deposition chamber.
Preferably, at least 1 of said atomizing devices are connected to said deposition chamber, said "at least 1" may be, for example, 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10, etc. When the deposition cavity is connected with at least 2 atomization devices, the at least 2 atomization devices are arranged in parallel.
Preferably, the distance between the laser light emitted from the laser light source and the top surface of the tray is 100-1500 μm, and may be, for example, 100 μm, 200 μm, 300 μm, 400 μm, 500 μm, 600 μm, 700 μm, 800 μm, 900 μm, 1000 μm, 1100 μm, 1200 μm, 1300 μm, 1400 μm, 1500 μm, or the like.
Preferably, the wavelength of the laser emitted by the laser light source is 100-1100nm, for example, 100nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1000nm or 1100nm, etc., and the raw materials in the mist can be decomposed and deposited.
Preferably, the power of the laser light source is 50-1000W, for example, 50W, 70W, 100W, 120W, 150W, 200W, 300W, 400W, 500W, 600W, 700W, 800W, 900W, 1000W, or the like.
In the invention, the laser light source can be an infrared laser light source, a visible light laser light source or an ultraviolet laser light source, and can be a continuous laser light source or a pulse laser light source.
Preferably, a temperature control assembly is arranged in the inner cavity of the tray, and the temperature control assembly comprises a heating assembly and/or a cooling assembly. The temperature of the tray is regulated and controlled by the temperature control component by taking the temperature of the tray as a set value, so that the temperature of the base material is regulated and controlled.
Optionally, a rotating component is disposed at the bottom of the tray, and the rotating component is used for driving the tray to rotate, so as to drive the substrate to rotate.
Preferably, the outer side wall of the deposition cavity is provided with the mist inlet and the exhaust port, and the mist inlet and the exhaust port are both higher than the laser light source.
Preferably, the laser light emitted by the laser light source is perpendicular to the section of the exhaust port.
Preferably, the atomization cavity is provided with a carrier gas inlet and a carrier gas outlet, the carrier gas inlet is communicated with the air source, and the carrier gas outlet is communicated with the mist inlet.
Preferably, an air inlet branch is led out from a communicating pipeline of the carrier gas outlet and the mist phase inlet, an air inlet end of the air inlet branch is communicated with a gas source, and gas provided by the gas source can be used for transporting mist generated by the atomizing device together with carrier gas provided by the gas source.
Preferably, the gas source and the gas source independently comprise any one or a combination of at least two of nitrogen, argon, helium or hydrogen.
The term "independently" means that the gas source may be any one or a combination of at least two of nitrogen, argon, helium and hydrogen, and the two may not interfere with each other when the gas source selects the gas component.
Preferably, the composition of the gas source is the same as the composition of the gas source.
Preferably, the ultrasonic member includes an ultrasonic vibrator.
Preferably, the frequency of the ultrasonic member is 1-10MHz, and can be 1MHz, 2MHz, 3MHz, 4MHz, 5MHz, 6MHz, 7MHz, 8MHz, 9MHz or 10MHz, for example.
Preferably, the deposition cavity comprises a rectifying section, a deposition section and a discharge section which are sequentially connected along the flow direction of the mist; the rectifying section is provided with an airflow converging structure, the discharging section is provided with an airflow diverging structure, the structure of the depositing section comprises a straight cylinder structure with two open ends, the small-size end of the rectifying section is abutted to the input end of the depositing section, and the output end of the depositing section is abutted to the small-size end of the discharging section.
In the invention, the rectifying section is provided with an airflow converging structure, and can rectify the fog entering the reaction chamber, so that the airflow before the fog flows into the deposition section is more stable, and the uniformity of the airflow field in the subsequent deposition section is improved; the exhaust section of the device has an airflow divergence structure, so that the gas flow at the output end of the deposition section can be prevented from being too fast, the gas flow is prevented from directly striking the inner wall of the output end to form an unstable flow field, the buffer space is increased, the uniformity of the gas flow field in the reaction chamber can be greatly improved, and the quality of a deposited film is further improved.
Preferably, the rectifying section is provided with at least 1 (for example, 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10, etc.) of the mist phase inlets, and the discharging section is provided with at least 1 (for example, 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10, etc.) of the exhaust ports.
Preferably, the bottom of the deposition section is provided with the tray, and the distance between the top surface of the tray and the top surface of the inner cavity of the deposition section is 0.5-5mm, for example, 0.5mm, 0.7mm, 1mm, 1.5mm, 2mm, 2.5mm, 3mm, 3.5mm, 4mm, 4.5mm or 5mm, etc.
In the invention, when the distance between the top surface of the tray and the top surface of the inner cavity of the deposition section is controlled to be 0.5-5mm, the substrate is placed on the top surface of the tray, a narrow slit can be formed above the substrate, and the narrow slit can enable the air flow above the substrate to be laminar, so that the uniformity of film deposition can be improved.
Preferably, the rectifying section comprises a first straight barrel section and a tapered section which are in butt joint in sequence, the cross-sectional area of the tapered section gradually decreases along the flow direction of the mist, and the small-size end of the tapered section is in butt joint with the input end of the depositing section.
Preferably, the inclined surface of the tapered section forms an angle of 25 ° -75 ° with the cross section, for example 25 °, 27 °, 30 °, 32 °, 35 °, 37 °, 40 °, 42 °, 45 °, 50 °, 60 °, 65 °, 70 ° or 75 °.
Preferably, the discharge section comprises a divergent section and a second straight section which are in butt joint in sequence, the cross-sectional area of the divergent section is gradually increased along the flow direction of the mist, and the small-size end of the divergent section is in butt joint with the output end of the deposition section.
Preferably, the inclined plane of the diverging section forms an angle with the cross section of 25 ° -75 °, for example 25 °, 27 °, 30 °, 32 °, 35 °, 37 °, 40 °, 42 °, 45 °, 50 °, 60 °, 65 °, 70 ° or 75 °.
Preferably, 2 mist inlets are formed in the outer side wall of the first straight barrel section, and are respectively marked as a first mist inlet and a second mist inlet, and the first mist inlet and the second mist inlet are oppositely arranged.
In the invention, the first fog phase inlet and the second fog phase inlet which are oppositely arranged enable the carrier gas carrying fog to enter the rectifying section in two paths, and in the rectifying section, two paths of air flows collide to achieve better rectifying effect.
In a second aspect, the present invention provides a method for performing atomized vapor deposition using the atomized vapor deposition apparatus of the first aspect, the method comprising:
placing a substrate on a tray, so that the top surface of the substrate is lower than and parallel to laser emitted by a laser source; and placing the raw material liquid into an atomization cavity, starting an ultrasonic part to enable the raw material liquid to form mist and flow into the inner cavity of the deposition cavity, and irradiating laser on the mist to perform atomization vapor deposition.
The material of the substrate is not limited in the invention, and the substrate comprises any one of sapphire, silicon, germanium, silicon carbide, quartz or metal.
The invention is not limited to the components of the raw material liquid, including but not limited to GaCl 3 、AlCl 3 、ZnCl 2 、FeCl 3 、GaBr 3 、AlBr 3 、ZnBr 2 、FeBr 3 At least one of Ga acetoacetate, al acetoacetate, in acetoacetate, fe acetylacetonate, al vinylacetone, ga vinylacetone, tetraethyl orthosilicate (TEOS), and octamethyl cyclotetrasiloxane (OMCTS); thereby forming a metal oxide thin film material including Ga on a substrate 2 O 3 、Al 2 O 3 、ZnO、(Al x Ga 1-x ) 2 O 3 、(Fe x Ga 1-x ) 2 O 3 Or SiO 2 Etc.
Preferably, the temperature of the substrate is 20 to 400 ℃, for example, 20 ℃, 30 ℃, 40 ℃, 50 ℃, 70 ℃, 100 ℃, 150 ℃, 200 ℃, 250 ℃, 300 ℃, 350 ℃, 400 ℃, or the like can be used.
Preferably, the distance between the laser and the top surface of the substrate is 10-1000 μm, for example, 10 μm, 20 μm, 30 μm, 50 μm, 70 μm, 100 μm, 150 μm, 200 μm, 300 μm, 400 μm, 500 μm, 600 μm, 700 μm, 800 μm, 900 μm or 1000 μm, etc.
Preferably, the diameter of the droplets in the mist is 1-5 μm, and may be, for example, 1 μm, 1.5 μm, 2 μm, 2.5 μm, 3 μm, 3.5 μm, 4 μm, 4.5 μm, or 5 μm, etc.
Preferably, the gas pressure in the inner cavity of the deposition chamber is 10-110kPa, for example, 10kPa, 20kPa, 30kPa, 40kPa, 50kPa, 60kPa, 70kPa, 80kPa, 90kPa, 100kPa, 110kPa, or the like may be employed.
The numerical ranges recited herein include not only the above-listed point values, but also any point values between the above-listed numerical ranges that are not listed, and are limited in space and for the sake of brevity, the present invention is not intended to be exhaustive of the specific point values that the stated ranges include.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides an atomization vapor deposition device, which is characterized in that a laser light source is introduced to provide energy for a deposition reaction process, so that raw material mist can react at low temperature, a film is deposited on the surface of a substrate on a tray, and the laser light source directly irradiates the mist to perform the deposition reaction, so that the substrate and the deposited film are difficult to damage, thereby realizing low-temperature chemical vapor deposition without damage or with low damage, even realizing room-temperature chemical vapor deposition, greatly improving the quality of the deposited film, and being green and energy-saving;
simultaneously, atomizing device includes atomizing chamber and is used for holding the base of supersound medium to with the supersound spare set up in the bottom of base makes supersound spare direct contact supersound medium, and the ultrasonic wave that supersound spare sent can pass through the supersound medium and transmit to atomizing chamber, thereby can arouse the raw materials liquid in the atomizing chamber and form fog, and this can avoid the corrosion of raw materials liquid to supersound spare, extension supersound spare life.
Drawings
FIG. 1 is a schematic view of an atomized vapor deposition apparatus according to embodiment 1 of the present invention;
FIG. 2 is a schematic view of an atomized vapor deposition apparatus according to embodiment 2 of the present invention;
FIG. 3 is a schematic view of an atomized vapor deposition apparatus according to embodiment 3 of the present invention;
FIG. 4 is a front view of a deposition chamber provided in embodiment 3 of the present invention;
FIG. 5 is a top view of a deposition chamber according to embodiment 3 of the present invention;
wherein, 1-atomizing cavity; 2-an ultrasonic member; 3-a carrier gas inlet; 4-a carrier gas outlet; 5-a deposition chamber; 501-rectifying section; 502-a deposition section; 503-an exhaust section; 505-mist inlet; 5051-first mist inlet; 5052-a second mist phase inlet; 506-exhaust port; 6-a laser light source; 7-a tray; 8-an air inlet branch; 9-an air inlet end; 10-a base; 11-laser introduction window.
Detailed Description
It is to be understood that in the description of the present invention, the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus are not to be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", etc. may explicitly or implicitly include one or more such feature. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.
It should be noted that, in the description of the present invention, unless explicitly specified and limited otherwise, the terms "disposed," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art in a specific case.
The technical scheme of the invention is further described by the following specific embodiments.
Example 1
The present embodiment provides an atomized vapor deposition apparatus, as shown in fig. 1, which includes a deposition chamber 5;
the bottom of the deposition cavity 5 is provided with a tray 7 for supporting a substrate, the top surface of the tray 7 is positioned in the inner cavity of the deposition cavity 5, and a temperature control assembly is arranged in the inner cavity of the tray 7; the outer side wall of the deposition cavity 5 is provided with a laser introducing window 11, one side of the laser introducing window 11 far away from the deposition cavity 5 is provided with a laser source 6, laser emitted by the laser source 6 is higher than the top surface of the tray 7 and parallel to the top surface of the tray 7, the distance between the laser source and the top surface is 100 mu m, the wavelength of the laser emitted by the laser source 6 is 100nm, and the power of the laser is 50W;
the deposition cavity 5 is provided with a fog phase inlet 505 and an exhaust port 506, the deposition cavity 5 is connected with an atomization device through the fog phase inlet 505, and the atomization device comprises an atomization cavity 1 and a base 10 for containing ultrasonic media; the outer side wall and the top surface of the atomization cavity 1 are respectively provided with a carrier gas inlet 3 and a carrier gas outlet 4, the carrier gas inlet 3 is communicated with an air source, and the carrier gas outlet 4 is communicated with a mist phase inlet 505 of the deposition cavity 5; an air inlet branch 8 is led out from a communicating pipeline of the carrier gas outlet 4 and the mist inlet 505, and an air inlet end 9 of the air inlet branch 8 is communicated with a gas source; the gas source and the gas source are both nitrogen;
the base 10 is of a hollow structure with an open top, the bottom end of the base is provided with an ultrasonic part 2, the ultrasonic part 2 is an ultrasonic vibrator, the frequency of the ultrasonic part is 1MHz, a part of the ultrasonic part 2 is positioned in an inner cavity of the base 10, an ultrasonic medium is contained in the inner cavity of the base 10, and the ultrasonic medium is pure water.
Example 2
The present embodiment provides an atomized vapor deposition apparatus, as shown in fig. 2, which includes a deposition chamber 5;
the deposition cavity 5 comprises a rectifying section 501, a deposition section 502 and a discharge section 503 which are sequentially connected, wherein the rectifying section 501 is provided with an airflow converging structure, namely the rectifying section 501 comprises a first straight barrel section and a tapered section which are sequentially connected, the cross section area of the tapered section is gradually reduced along the flow direction of mist, the included angle between the inclined plane of the tapered section and the cross section is 25 degrees, and the small-size end of the tapered section is connected with the input end of the deposition section 502 in a butt joint mode; the outer side wall of the first straight barrel section is provided with 1 fog inlet 505;
the structure of the deposition section 502 is a straight cylinder structure with two open ends; the bottom of the deposition section 502 is provided with a tray 7, the top surface of the tray 7 is positioned in the inner cavity of the deposition section 502, the distance between the top surface of the tray 7 and the top surface of the inner cavity of the deposition section 502 is 1.5mm, and a temperature control component is arranged in the inner cavity of the tray 7; the outer side wall of the deposition cavity 5 is provided with a laser introducing window 11, one side of the laser introducing window 11 far away from the deposition cavity 5 is provided with a laser source 6, laser emitted by the laser source 6 is higher than the top surface of the tray 7 and parallel to the top surface of the tray 7, the distance between the laser source and the top surface is 800 mu m, the wavelength of the laser emitted by the laser source 6 is 500nm, and the power of the laser is 500W;
the exhaust section 503 has an airflow divergence structure, that is, the exhaust section 503 includes a divergent section and a second straight section that are in butt joint in sequence, the cross-sectional area of the divergent section gradually increases along the flow direction of the mist, the included angle between the inclined plane of the divergent section and the cross-section is 25 °, and the small-sized end of the divergent section is in butt joint with the output end of the deposition section 502; the outer side wall of the second straight barrel section is provided with 1 exhaust port 506;
the rectifying section 501 is connected with an atomization device through the mist inlet 505, and the atomization device comprises an atomization cavity 1 and a base 10 for containing ultrasonic media; the outer side wall and the top surface of the atomization cavity 1 are respectively provided with a carrier gas inlet 3 and a carrier gas outlet 4, the carrier gas inlet 3 is communicated with an air source, and the carrier gas outlet 4 is communicated with a mist phase inlet 505 of the deposition cavity 5; an air inlet branch 8 is led out from a communicating pipeline of the carrier gas outlet 4 and the mist inlet 505, and an air inlet end 9 of the air inlet branch 8 is communicated with a gas source; the gas source and the gas source are argon;
the base 10 is of a hollow structure with an open top, the bottom end of the base is provided with an ultrasonic part 2, the ultrasonic part 2 is an ultrasonic vibrator, the frequency of the ultrasonic part is 5MHz, a part of the ultrasonic part 2 is positioned in an inner cavity of the base 10, an ultrasonic medium is contained in the inner cavity of the base 10, and the ultrasonic medium is pure water.
Example 3
The present embodiment provides an atomized vapor deposition apparatus, as shown in fig. 3, which includes a deposition chamber 5;
the deposition cavity 5 comprises a rectifying section 501, a deposition section 502 and a discharge section 503 which are sequentially connected, wherein the rectifying section 501 is provided with an airflow converging structure, namely the rectifying section 501 comprises a first straight barrel section and a tapered section which are sequentially connected, the cross section area of the tapered section is gradually reduced along the flow direction of mist, the included angle between the inclined plane of the tapered section and the cross section is 45 degrees, and the small-size end of the tapered section is connected with the input end of the deposition section 502 in a butt joint mode; 2 fog phase inlets are formed in the outer side wall of the first straight barrel section and are respectively marked as a first fog phase inlet 5051 and a second fog phase inlet 5052, and the first fog phase inlet 5051 and the second fog phase inlet 5052 are oppositely arranged as shown in fig. 4 and 5;
the structure of the deposition section 502 is a straight cylinder structure with two open ends; the bottom of the deposition section 502 is provided with a tray 7, the top surface of the tray 7 is positioned in the inner cavity of the deposition section 502, the distance between the top surface of the tray 7 and the top surface of the inner cavity of the deposition section 502 is 5mm, and a temperature control assembly is arranged in the inner cavity of the tray 7; the outer side wall of the deposition cavity 5 is provided with a laser introducing window 11, one side of the laser introducing window 11 far away from the deposition cavity 5 is provided with a laser source 6, laser emitted by the laser source 6 is higher than the top surface of the tray 7 and parallel to the top surface of the tray 7, the distance between the laser source and the top surface is 1500 mu m, the wavelength of the laser emitted by the laser source 6 is 1100nm, and the power of the laser is 1000W;
the exhaust section 503 has an airflow divergence structure, that is, the exhaust section 503 includes a divergent section and a second straight section that are in butt joint in sequence, the cross-sectional area of the divergent section gradually increases along the flow direction of the mist, the included angle between the inclined plane of the divergent section and the cross-section is 45 °, and the small-sized end of the divergent section is in butt joint with the output end of the deposition section 502; the outer side wall of the second straight barrel section is provided with 1 exhaust port 506;
the rectifying section 501 is connected with an atomization device through the first mist phase inlet 5051 and the second mist phase inlet 5052, and the atomization device comprises an atomization cavity 1 and a base 10 for containing ultrasonic media; the outer side wall and the top surface of the atomization cavity 1 are respectively provided with a carrier gas inlet 3 and a carrier gas outlet 4, the carrier gas inlet 3 is communicated with an air source, and the carrier gas outlet 4 is communicated with a mist phase inlet 505 of the deposition cavity 5; the carrier gas outlet 4 is connected with an air inlet pipeline, the output end of the air inlet pipeline is connected with 2 branch pipelines, and the two branch pipelines are respectively communicated with a first fog phase inlet 5051 and a second fog phase inlet 5052; an air inlet branch 8 is led out of the air inlet pipeline, and an air inlet end 9 of the air inlet branch 8 is communicated with a gas source; the gas source and the gas source are argon;
the base 10 is of a hollow structure with an open top, the bottom end of the base is provided with an ultrasonic part 2, the ultrasonic part 2 is an ultrasonic vibrator, the frequency of the ultrasonic part is 10MHz, a part of the ultrasonic part 2 is positioned in an inner cavity of the base 10, an ultrasonic medium is contained in the inner cavity of the base 10, and the ultrasonic medium is pure water.
Comparative example 1
This comparative example provides an atomized vapor deposition apparatus differing from example 1 in that the laser light source and the laser introduction window are omitted, and the remainder is exactly the same as example 1.
Application example 1
The present application example provides a method for performing atomized vapor deposition using the atomized vapor deposition apparatus described in example 1, including:
placing a substrate on a tray, so that the top surface of the substrate is lower than and parallel to laser emitted by a laser light source, and the distance between the laser and the top surface of the substrate is 10 mu m; placing the raw material liquid into an atomization device, wherein the raw material liquid is the Ga acetoacetate; starting an atomization device to form a mist of raw material liquid, wherein the diameter of liquid drops in the mist is 5 mu m, the gas source and the gas provided by the gas source carry the mist to flow into a deposition cavity, and the air pressure in the deposition cavity is controlled at 10kPa; and starting a temperature control assembly, adjusting the temperature of the base material to 150 ℃, starting a laser source, and irradiating laser on the mist to perform atomized vapor deposition.
For vapor deposited Ga 2 O 3 The film is subjected to X-ray diffraction (XRD) rocking curve detection, the XRD rocking curve is a common method for representing the crystallization quality of crystals, and the smaller the half-width is, the less damage and defects in the crystals are, and the higher the crystallization quality is. The results of this application example show that the half width is 0.42 °, and the crystal quality of the thin film is high.
Application example 2
The present application example provides a method for performing atomized vapor deposition using the atomized vapor deposition apparatus described in embodiment 2, including:
placing a substrate on a tray, so that the top surface of the substrate is lower than and parallel to laser emitted by a laser light source, and the distance between the laser and the top surface of the substrate is 500 mu m; placing the raw material liquid into an atomization device, wherein the raw material liquid is the Ga acetoacetate; starting an atomization device to form mist of raw material liquid, wherein the diameter of liquid drops in the mist is 3 mu m, and air carried by an air source and air provided by the air source flows into a deposition cavity, and the air pressure in the deposition cavity is controlled at 50kPa; and starting a temperature control assembly, adjusting the temperature of the base material to be 200 ℃, and irradiating laser to the mist by a laser source to perform atomized vapor deposition.
For vapor deposited Ga 2 O 3 XRD rocking curve detection is carried out on the film, and the result shows that the half width is 0.48 degrees, and the crystal quality of the film is higher.
Application example 3
The present application example provides a method for performing atomized vapor deposition using the atomized vapor deposition apparatus described in embodiment 3, including:
placing a substrate on a tray, so that the top surface of the substrate is lower than and parallel to laser emitted by a laser light source, and the distance between the laser and the top surface of the substrate is 1000 mu m; placing the raw material liquid into an atomization device, wherein the raw material liquid is the Ga acetoacetate; starting an atomization device to form mist of raw material liquid, wherein the diameter of liquid drops in the mist is 1 mu m, and air carried by an air source and air provided by the air source flows into a deposition cavity, and the air pressure in the deposition cavity is controlled at 110kPa; and starting a temperature control assembly, adjusting the temperature of the base material to 400 ℃, and irradiating laser to the mist by a laser source to perform atomized vapor deposition.
For vapor deposited Ga 2 O 3 XRD rocking curve detection is carried out on the film, and the result shows that the half width is 0.56 degrees, and the crystal quality of the film is higher.
Comparative application example 1
The present comparative application example provides a method of performing atomized vapor deposition using the atomized vapor deposition apparatus described in comparative example 1, comprising:
placing a base material on a tray, and placing a raw material liquid into an atomization device, wherein the raw material liquid is acetoacetic acid Ga; starting an atomization device to form mist of raw material liquid, wherein the diameter of liquid drops in the mist is 5 mu m, and a gas source and nitrogen provided by the gas source carry the mist to flow into a reaction chamber, and the air pressure in the reaction chamber is controlled at 10kPa; and starting the temperature control assembly, adjusting the temperature of the base material to 600 ℃, and performing atomization vapor deposition.
For vapor deposited Ga 2 O 3 XRD rocking curve detection is carried out on the film, and the result shows that the half width is 0.88 degrees, the crystal lattice is damaged by high-temperature deposition, and the crystal quality of the film is poor.
In summary, according to the atomized vapor deposition device provided by the invention, the laser light source is introduced to provide energy for the deposition reaction process, so that the raw material mist can react at low temperature, and a film is deposited on the surface of the substrate on the tray, and the laser light source directly irradiates the mist to perform the deposition reaction, so that the substrate and the deposited film are difficult to damage, and therefore, the low-temperature chemical vapor deposition without damage or with low damage can be realized, even the chemical vapor deposition at room temperature is realized, the quality of the deposited film can be greatly improved, and the device is green and energy-saving;
simultaneously, atomizing device includes atomizing chamber and is used for holding the base of supersound medium to with the supersound spare set up in the bottom of base makes supersound spare direct contact supersound medium, and the ultrasonic wave that supersound spare sent can pass through the supersound medium and transmit to atomizing chamber, thereby can arouse the raw materials liquid in the atomizing chamber and form fog, and this can avoid the corrosion of raw materials liquid to supersound spare, extension supersound spare life.
The applicant declares that the above is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be apparent to those skilled in the art that any changes or substitutions that are easily conceivable within the technical scope of the present invention disclosed by the present invention fall within the scope of the present invention and the disclosure.
Claims (7)
1. Ga using atomization vapor deposition device 2 O 3 The method for atomizing vapor deposition of the thin film is characterized in that the atomized vapor deposition device comprises a deposition cavity;
the deposition cavity comprises a rectifying section, a deposition section and a discharge section which are sequentially connected along the flow direction of the mist;
the rectifying section is provided with an airflow converging structure, the discharging section is provided with an airflow diverging structure, the structure of the depositing section comprises a straight cylinder structure with two open ends, the small-size end of the rectifying section is in butt joint with the input end of the depositing section, and the output end of the depositing section is in butt joint with the small-size end of the discharging section; the bottom of the deposition section is provided with a tray, and the top surface of the tray is positioned in the inner cavity of the deposition cavity; when the distance between the top surface of the tray and the top surface of the inner cavity of the deposition section is controlled to be 0.5-5mm, forming a narrow slit above the base material arranged on the top surface of the tray, wherein the narrow slit enables the air flow above the base material to be laminar;
the outer side wall of the deposition cavity is provided with a laser introducing window, one side of the laser introducing window, which is far away from the deposition cavity, is provided with a laser source, laser emitted by the laser source is higher than and parallel to the top surface of the tray, and the wavelength of the laser emitted by the laser source is 100-1100nm;
the rectifying section comprises a first straight barrel section and a tapered section which are sequentially butted, the cross section area of the tapered section is gradually reduced along the flow direction of fog, and the small-size end of the tapered section is butted with the input end of the depositing section; the outer side wall of the first straight barrel section is provided with 2 fog inlets which are respectively marked as a first fog inlet and a second fog inlet, and the first fog inlet and the second fog inlet are oppositely arranged; the deposition cavity is connected with an atomization device through the first mist inlet and the second mist inlet;
the exhaust section is provided with at least 1 exhaust port;
the atomizing device comprises an atomizing cavity and a base for containing ultrasonic media, the base is of a hollow structure with an opening at the top end, an ultrasonic piece is arranged at the bottom end of the base, and part of the ultrasonic piece is positioned in an inner cavity of the base; the bottom of the atomizing cavity is positioned in the inner cavity of the base, and the atomizing cavity is communicated with an air source;
the method for atomizing vapor deposition comprises the following steps:
placing a substrate on a tray, so that the top surface of the substrate is lower than and parallel to laser emitted by a laser source; placing raw material liquid into an atomization cavity, wherein the raw material liquid is Ga acetoacetate, starting an ultrasonic part to enable the raw material liquid to form mist and flow into the inner cavity of a deposition cavity, and irradiating laser on the mist to perform atomization vapor deposition; after atomized vapor deposition, ga is formed on the substrate 2 O 3 A film;
the distance between the laser and the top surface of the substrate is 10-1000 μm, and the temperature of the substrate is 150-200 ℃.
2. The method of aerosol vapor deposition according to claim 1, wherein a distance between the laser light emitted from the laser light source and the top surface of the tray is 100-1500 μm;
the power of the laser light source is 50-1000W;
a temperature control component is arranged in the inner cavity of the tray.
3. The method of aerosol vapor deposition of claim 1, wherein the deposition chamber has an outer sidewall provided with the aerosol inlet and the exhaust, both of which are higher than the laser source;
the laser emitted by the laser source is perpendicular to the section of the exhaust port.
4. The method of atomizing vapor deposition according to claim 1, wherein the atomizing chamber is provided with a carrier gas inlet and a carrier gas outlet, the carrier gas inlet being in communication with the gas source, the carrier gas outlet being in communication with the mist inlet;
an air inlet branch is led out from a communicating pipeline of the carrier gas outlet and the mist phase inlet, and an air inlet end of the air inlet branch is communicated with a gas source;
the gas source and the gas source independently comprise any one or a combination of at least two of nitrogen, argon, helium, or hydrogen.
5. The method of atomizing vapor deposition according to claim 1, wherein the ultrasonic member comprises an ultrasonic vibrator;
the frequency of the ultrasonic part is 1-10MHz.
6. The method of atomizing vapor deposition according to claim 1, wherein the discharge section comprises a divergent section and a second straight section which are abutted in this order, the cross-sectional area of the divergent section gradually increasing in the flow direction of the mist, and the small-sized end of the divergent section being abutted to the output end of the deposition section.
7. The method of atomizing vapor deposition according to claim 1, wherein the diameter of the droplets in the mist is 1 to 5 μm;
the air pressure in the inner cavity of the deposition cavity is 10-110kPa.
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