CN116288177A - ITO film, preparation method and LED chip - Google Patents

ITO film, preparation method and LED chip Download PDF

Info

Publication number
CN116288177A
CN116288177A CN202310308231.8A CN202310308231A CN116288177A CN 116288177 A CN116288177 A CN 116288177A CN 202310308231 A CN202310308231 A CN 202310308231A CN 116288177 A CN116288177 A CN 116288177A
Authority
CN
China
Prior art keywords
ito
ito film
film
target
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310308231.8A
Other languages
Chinese (zh)
Inventor
罗钢铁
张星星
林潇雄
胡加辉
金从龙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangxi Zhao Chi Semiconductor Co Ltd
Original Assignee
Jiangxi Zhao Chi Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangxi Zhao Chi Semiconductor Co Ltd filed Critical Jiangxi Zhao Chi Semiconductor Co Ltd
Priority to CN202310308231.8A priority Critical patent/CN116288177A/en
Publication of CN116288177A publication Critical patent/CN116288177A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides an ITO film, a preparation method and an LED chip, wherein an ITO target material is used for preparing an ITO gas-phase reactant through electron beam evaporation, then a metal substrate material and the ITO gas-phase reactant are heated at a preset temperature to form metal liquid drops, the metal liquid drops are controlled to be separated out under a preset oxygen flux and a preset ITO target material evaporation rate, so that the ITO film with a mutually communicated nano structure is formed, specifically, the nano-scale is used for regulating and controlling total internal reflection light scattering (Rayleigh scattering), the ITO film with the nano-structure on the surface is applied to the LED, and the light total internal reflection change can be caused through the nano-scale space refractive index change, thereby improving the light extraction efficiency.

Description

ITO film, preparation method and LED chip
Technical Field
The invention relates to the technical field of LEDs, in particular to an ITO film, a preparation method and an LED chip.
Background
The light emitting diode (Light Emitting Diode, simply referred to as LED) is a semiconductor electronic device capable of emitting light, and attracts more and more researchers' attention due to its small size, high brightness, low power consumption, and the like.
In the current forward-mounted LED chip, the LED light emitting efficiency can be improved in several ways, but each has drawbacks:
1) The ITO conductive film is subjected to wet corrosion roughening, so that the luminous power of the LED chip can be improved to a certain extent, but the method needs to additionally increase the chip process steps, and meanwhile, the process control is greatly influenced by environment and materials;
2) The ITO conductive film is prepared into a periodic hole structure, so that the luminous power of the LED chip can be improved to a certain extent, but the periodic hole structure enables the working voltage of the chip to be increased by about 0.15V, and the LED chip has little significance on the packaging of white light luminous effect;
3) According to the characteristic of Ni Bao Cenggao temperature aggregation, the surface of the nano-structure P-type layer is etched by taking the aggregated Ni as a mask, so that the luminous power of the LED chip can be improved to a certain extent, but the LED chip is easy to lose efficacy due to the characteristic that the P-type layer is fragile and easy to damage.
Disclosure of Invention
Based on the above, the invention aims to provide an ITO film, a preparation method and an LED chip, and aims to improve the luminous power of the LED chip under the condition that other performances of the LED chip are not affected.
According to the embodiment of the invention, the preparation method of the ITO film comprises the following steps:
providing an ITO target material, and preparing an ITO gas-phase reactant from the ITO target material by electron beam evaporation;
providing a metal substrate material, and heating the metal substrate material and the ITO gas-phase reactant at a preset temperature to form metal liquid drops;
and controlling the metal liquid drop to be separated out under the preset oxygen flow and the preset ITO target evaporation rate so as to form the ITO film with the nano structure.
In the step of preparing the ITO gas-phase reactant by the ITO target through electron beam evaporation, the ITO target is firstly placed into electron beam evaporation equipment to be vacuumized, then the electron beam is controlled to bombard the ITO target, and the evaporation temperature is controlled to be 280-300 ℃ to obtain the ITO gas-phase reactant.
Further, the ITO target is InSn oxide.
Further, the metal base material is one of Au, ni or Fe.
Further, in the step of heating the metal base material and the ITO gas-phase reactant at a preset temperature to form metal droplets, the preset temperature is 290 ℃ to 310 ℃.
Further, in the step of forming the nano-structured ITO film by controlling the precipitation of the metal droplets under the preset oxygen flow and the preset ITO target evaporation rate, the oxygen flow is controlled to be 0sccm, and the ITO target evaporation rate is controlled to be
Figure BDA0004147560300000021
The first ITO film with the thickness of 50 nm-100 nm is separated out, then the oxygen introducing amount is controlled to be 9 sccm-11 sccm, and the evaporation rate of the ITO target is +.>
Figure BDA0004147560300000022
And precipitating a second ITO film with a thickness of 150 nm-200 nm, wherein the ITO film is composed of the first ITO film and the second ITO film.
Further, the roughness of the ITO film is more than 35nm.
According to the ITO film, the ITO film is prepared by the preparation method of the ITO film.
Further, the thickness of the ITO film is 200 nm-300 nm.
According to the embodiment of the invention, the LED chip comprises the ITO film prepared by the ITO film preparation method.
Compared with the prior art: the ITO target is subjected to electron beam evaporation to prepare an ITO gas-phase reactant, then the metal substrate material and the ITO gas-phase reactant are heated at a preset temperature to form metal liquid drops, the metal liquid drops are controlled to be separated out under the preset oxygen flow and the preset ITO target evaporation rate, so that ITO films with mutually communicated nano structures are formed, specifically, the nano-scale is used for regulating and controlling total internal reflection light scattering (Rayleigh scattering), the ITO films with the nano structures on the surfaces are applied to LEDs, and the light total internal reflection change can be caused by the nano-scale space refractive index change, so that the light extraction efficiency is improved.
Drawings
FIG. 1 is a flow chart of an ITO film preparation method according to an embodiment of the present invention;
FIG. 2 is a graph showing the current-voltage curves of the ITO thin films of example 2 and comparative examples 1-3 applied to LED chips;
fig. 3 is a graph showing current versus luminous power for the ITO thin films of example 2 and comparative examples 1-3 applied to LED chips.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Several embodiments of the invention are presented in the figures. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "mounted" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1, a method for preparing an ITO film according to an embodiment of the present invention specifically includes the following steps:
s100: providing an ITO target material, and preparing an ITO gas-phase reactant from the ITO target material by electron beam evaporation;
it should be noted that, the ITO film is generally deposited on the LED epitaxial wafer, where the LED epitaxial wafer includes at least a substrate, an N-type layer, an active layer and a P-type layer, the LED epitaxial wafer needs to be processed before the ITO film is deposited on the LED epitaxial wafer, specifically, the topography etching of N-GaN is first exposed by inductively coupled plasma (Inductive Coupled Plasma, ICP) etching technology, then CB-SiO2 is deposited on the surface of the P-type layer as a current blocking layer by using a plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) device, so as to improve the current crowding phenomenon near the P-electrode, and finally the GaN-based epitaxial wafer is cleaned by using an SPM solution, where the SPM solution includes H 2 SO 4 、H 2 O 2 And H 2 And O, drying after cleaning, and carrying out subsequent ITO film deposition after drying.
Further, after the ITO target is obtained, preparing an ITO gas-phase reactant by electron beam evaporation of the ITO target, specifically, the ITO target is InSn oxide, namely, the InSn oxide is placed into electron beam evaporation equipment to be vacuumized, wherein the temperature in a cavity is kept to be 280-300 ℃ in the vacuumized process, then the electron beam is controlled to bombard the InSn oxide, the evaporation temperature is controlled to be 280-300 ℃, and the InSn oxide is evaporated from a solid phase to a gas phase, so that the ITO gas-phase reactant is obtained.
S200: providing a metal substrate material, and heating the metal substrate material and the ITO gas-phase reactant at a preset temperature to form metal liquid drops;
specifically, the metal substrate material is any one of Au, ni or Fe, taking Au as an example, au, gas-phase InSn oxide and treated LED epitaxial wafer of the metal substrate material are placed In a cavity, and the preset temperature is controlled to be 290-310 ℃, and since Au is heated In a high-temperature environment, after absorbing the gas-phase components of InSn oxide, the melting point becomes low, the Au/InSn oxide mixture is melted into metal droplets, that is, au/InSn oxide mixture is In the gas-phase reaction atmosphere of InSn oxide, and target elements In-Sn oxide In the gas-phase reaction of InSn oxide, that is, whisker elements are continuously absorbed, so that the metal droplets with lower melting point are formed.
The target element In-Sn oxide is adsorbed and dissolved In the metal liquid drop continuously to reach the supersaturated state gradually, so that crystal nucleus of the target element is formed by precipitation In the metal liquid drop, and along with continuous precipitation of the target element at the interface between the liquid drop and the LED epitaxial wafer, that is, when the number of atoms In the liquid drop exceeds the equilibrium concentration In the liquid phase, the crystal is precipitated In the dropping direction of the metal liquid and grows gradually and directionally to form the ITO film with the nano structure, and the ITO film with the nano structure is a particle hole film.
S300: and controlling the metal liquid drop to be separated out under the preset oxygen flow and the preset ITO target evaporation rate so as to form the ITO film with the nano structure.
The specific process for forming the ITO film into the granular porous film is as follows: firstly, controlling the oxygen flow to be 0sccm and the evaporation rate of the ITO target material to be
Figure BDA0004147560300000051
The first ITO film with the thickness of 50 nm-100 nm is separated out, then the oxygen flow is controlled to be 9 sccm-11 sccm, and the evaporation rate of the ITO target material is +.>
Figure BDA0004147560300000052
And separating out a second ITO film with the thickness of 150-200 nm, wherein the ITO film consists of the first ITO film and the second ITO film, and it can be understood that the ITO film with the thickness of 200-300 nm is obtained by controlling the oxygen flow in different stages, and in addition, the roughness of the ITO film prepared by the process is larger than 35nm.
Specifically, after the ITO film deposition is completed, preparing a P-N metal electrode of the chip, wherein the electrode structure is Cr/Al/Ti/Ni/Pt/Ni in sequencePt/Au, and depositing a layer of SiO on the outermost surface of the chip 2 And (5) a passivation layer to finally obtain the LED chip comprising the ITO film.
The invention is further illustrated by the following examples:
example 1
The embodiment provides an ITO film for deposition on an LED epitaxial wafer, wherein the LED epitaxial wafer at least comprises a substrate, an N-type layer, an active layer and a P-type layer, the LED epitaxial wafer is required to be processed before the ITO film is deposited on the LED epitaxial wafer, specifically, the morphology etching of N-GaN is exposed firstly through an inductively coupled plasma (Inductive Coupled Plasma, ICP) etching technology, then CB-SiO2 is deposited on the surface of the P-type layer by utilizing a plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) device as a current blocking layer, so that the current crowding phenomenon near a P electrode is improved, and finally SPM solution (H 2 SO 4 :H 2 O 2 :H 2 O=5:1:1) cleaning the GaN-based epitaxial wafer, drying the wafer after cleaning, and carrying out subsequent ITO film deposition after drying.
The deposition process of the ITO film can be as follows:
1) Providing an ITO target material, and preparing an ITO gas-phase reactant from the ITO target material by electron beam evaporation;
after the ITO target is obtained, preparing an ITO gas-phase reactant by electron beam evaporation of the ITO target, specifically, the ITO target is InSn oxide, namely, the InSn oxide is placed into electron beam evaporation equipment and vacuumized, wherein the temperature in a cavity is kept at 300 ℃ in the vacuumized process, then the electron beam is controlled to bombard the InSn oxide, the evaporation temperature is controlled to be 300 ℃, and the InSn oxide is evaporated from a solid phase to a gas phase, so that the ITO gas-phase reactant is obtained.
2) Providing a metal substrate material, and heating the metal substrate material and the ITO gas-phase reactant at a preset temperature to form metal liquid drops;
in this embodiment, the metal base material is Au, vapor phase InSn oxide and treated LED epitaxial wafer are placed in the cavity, and the preset temperature is controlled to 300 ℃, and since Au is heated in a high temperature environment, after absorbing the vapor phase component of InSn oxide, the melting point becomes low, and the Au/InSn oxide mixture is melted into metal droplets.
3) Controlling the metal liquid drop to be separated out under the preset oxygen flux and the preset ITO target evaporation rate so as to form an ITO film with a nano structure;
in this embodiment, the specific process for forming the ITO film into the granular porous film is as follows: firstly, controlling the oxygen flow to be 0sccm and the evaporation rate of the ITO target material to be
Figure BDA0004147560300000061
The first ITO film with the thickness of 50nm is separated out, then the oxygen flow rate is controlled to be 10sccm, and the evaporation rate of the ITO target material is controlled to be +.>
Figure BDA0004147560300000062
And separating out a second ITO film with the thickness of 150nm, wherein the ITO film consists of a first ITO film and a second ITO film, and it can be understood that the ITO film with the thickness of 200nm is obtained by controlling the oxygen passing amount at different stages, and in addition, the roughness of the ITO film prepared by the process is 36.5nm.
Example 2
This example also provides an ITO film, which differs from example 1 in that the first ITO film has a thickness of 75nm, the second ITO film has a thickness of 175nm, i.e., the ITO film has a thickness of 250nm, and the ITO film has a roughness of 38.0nm.
Example 3
This example also provides an ITO film, which differs from example 2 in that the thickness of the first ITO film is 100nm, the thickness of the second ITO film is 200nm, i.e., the thickness of the ITO film is 300nm, and the roughness of the ITO film is 37.1nm.
Comparative example 1
This comparative example provides an ITO thin film, which is different from example 2 in that oxygen is not introduced during the growth of the ITO thin film to obtain a columnar ITO thin film having a roughness of 29.5nm.
Comparative example 2
This comparative example provides an ITO film, which is different from example 2 in that in the process of growing an ITO film, a first ITO film is grown by controlling the oxygen flow to 10sccm, and a second ITO film is grown by controlling the oxygen flow to 0sccm, so as to obtain a tree-shaped ITO film, and the roughness of the tree-shaped ITO film is 30.0nm.
Comparative example 3
This comparative example provides an ITO film, which is different from example 2 in that in the process of growing an ITO film, a first ITO film is grown by controlling the oxygen flow to 10sccm, and a second ITO film is grown by controlling the oxygen flow to 10sccm, so as to obtain a pellet-shaped ITO film, and the roughness of the tree-shaped ITO film is 7.1nm.
The ITO films obtained in examples 1-3 and comparative examples 1-3 were applied to an LED chip, and the voltage condition of the LED chip under a certain operating current was tested, as shown in FIG. 2 and FIG. 3, FIG. 2 is a graph of current versus voltage applied to the LED chip for the ITO films obtained in example 2 and comparative examples 1-3, and FIG. 3 is a graph of current versus luminous power applied to the LED chip for the ITO films obtained in example 2 and comparative examples 1-3.
The specific results are as follows:
Figure BDA0004147560300000071
as can be seen from the table, compared with the prior art, the ITO film prepared by the method in the embodiment of the invention is applied to the LED chip, the luminous power is effectively improved, wherein the granular porous ITO film prepared in the embodiment 2 is particularly obvious to be applied to the LED chip, and the luminous performance of the ITO film prepared in other embodiments applied to the LED chip is slightly worse than that of the ITO film prepared in the embodiment 2.
In summary, according to the ITO film, the preparation method and the LED chip provided by the embodiment of the invention, the ITO target is subjected to electron beam evaporation to prepare the ITO gas-phase reactant, then the metal substrate material and the ITO gas-phase reactant are heated at a preset temperature to form metal liquid drops, the metal liquid drops are controlled to be separated out under a preset oxygen passing amount and a preset ITO target evaporation rate, so that the ITO film with the mutually communicated nano structure is formed, specifically, the totally internally reflected light scattering (Rayleigh scattering) is regulated and controlled through a nano scale, and the ITO film with the nano structure on the surface is applied to the LED, so that the light total internal reflection change can be caused through the nano-size space refractive index change, and the light extraction efficiency is improved.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.

Claims (10)

1. A method for preparing an ITO film, the method comprising:
providing an ITO target material, and preparing an ITO gas-phase reactant from the ITO target material by electron beam evaporation;
providing a metal substrate material, and heating the metal substrate material and the ITO gas-phase reactant at a preset temperature to form metal liquid drops;
and controlling the metal liquid drop to be separated out under the preset oxygen flow and the preset ITO target evaporation rate so as to form the ITO film with the nano structure.
2. The method for preparing an ITO thin film according to claim 1, wherein in the step of preparing an ITO gas-phase reactant from the ITO target by electron beam evaporation, the ITO target is first placed into an electron beam evaporation device, vacuum-pumping treatment is performed, then electron beam bombardment of the ITO target is controlled, and the evaporation temperature is controlled to be 280-300 ℃, so that the ITO gas-phase reactant is obtained.
3. The method for producing an ITO thin film according to claim 2, wherein the ITO target is InSn oxide.
4. The method of manufacturing an ITO thin film according to claim 1, wherein the metal base material is one of Au, ni, or Fe.
5. The method according to claim 1, wherein in the step of heating the metal base material and the ITO gas-phase reactant at a predetermined temperature to form metal droplets, the predetermined temperature is 290 ℃ to 310 ℃.
6. The method according to claim 1, wherein in the step of forming the nano-structured ITO thin film by controlling the precipitation of the metal droplets under a preset oxygen flow rate and a preset ITO target evaporation rate, the oxygen flow rate is controlled to be 0sccm, and the ITO target evaporation rate is controlled to be
Figure FDA0004147560290000011
Figure FDA0004147560290000012
The first ITO film with the thickness of 50 nm-100 nm is separated out, then the oxygen introducing amount is controlled to be 9 sccm-11 sccm, and the evaporation rate of the ITO target is +.>
Figure FDA0004147560290000013
And precipitating a second ITO film with a thickness of 150 nm-200 nm, wherein the ITO film is composed of the first ITO film and the second ITO film.
7. The method for producing an ITO film according to claim 1, wherein the roughness of the ITO film is greater than 35nm.
8. An ITO film prepared by the method of any one of claims 1 to 7.
9. The ITO film according to claim 8, wherein the thickness of the ITO film is 200nm to 300nm.
10. An LED chip comprising an ITO film prepared by the method for preparing an ITO film according to any one of claims 1 to 7.
CN202310308231.8A 2023-03-27 2023-03-27 ITO film, preparation method and LED chip Pending CN116288177A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310308231.8A CN116288177A (en) 2023-03-27 2023-03-27 ITO film, preparation method and LED chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310308231.8A CN116288177A (en) 2023-03-27 2023-03-27 ITO film, preparation method and LED chip

Publications (1)

Publication Number Publication Date
CN116288177A true CN116288177A (en) 2023-06-23

Family

ID=86795726

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310308231.8A Pending CN116288177A (en) 2023-03-27 2023-03-27 ITO film, preparation method and LED chip

Country Status (1)

Country Link
CN (1) CN116288177A (en)

Similar Documents

Publication Publication Date Title
US9202975B2 (en) Light emitting diode including graphene layer
US8957427B2 (en) Successive ionic layer adsorption and reaction process for depositing epitaxial ZnO on III-nitride-based light emitting diode and light emitting diode including epitaxial ZnO
US9190565B2 (en) Light emitting diode
KR20140112061A (en) A nanowire device having graphene top and bottom electrodes and method of making such a device
CN103681996B (en) UV (Ultraviolet) LED and preparation method thereof
US5811319A (en) Methods of forming electrodes on gallium nitride group compound semiconductors
KR102112249B1 (en) Semiconductor wafer
KR100785525B1 (en) Heterostructure of luminescence zno nano-wire comprising zns quantum dot and method for fabricating the same
WO2008045423A1 (en) Self assembled controlled luminescent transparent conductive photonic crystals for light emitting devices
US20140306256A1 (en) Light emitting diode
KR101548420B1 (en) Preparation of metal particle layer and light emitting device manufactured by using same
KR20140090333A (en) Method for manufacturing graphene without catalyst and Method for manufacturing light emitting diodes using the same method
CN116581222B (en) Deep ultraviolet semiconductor light-emitting device, manufacturing method thereof and deep ultraviolet sterilization device
US9159865B2 (en) Method of forming zinc oxide prominence and depression structure and method of manufacturing solar cell using thereof
CN116288177A (en) ITO film, preparation method and LED chip
US20140054753A1 (en) Nano-meshed structure pattern on sapphire substrate by metal self-arrangement
CN108346721B (en) Manufacturing method of light emitting diode
CN104701137B (en) AlN buffer layers and with the buffer layer chip preparation method
CN102569038A (en) Method for manufacturing patterned substrate
CN108831902B (en) Vertical structure nano-array LED and preparation method thereof
CN109817776A (en) A kind of light-emitting diode chip for backlight unit and preparation method thereof
KR20120100338A (en) Method for growing nanowire
JP2011137230A (en) Method for manufacturing self-organized nanostructured thin film by flocculation phenomenon
RU2573474C2 (en) Nanostructured device and method of manufacturing nanostructures
CN100370579C (en) Method for forming quantum point

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination