CN116283361A - DPA ceramic circuit board and manufacturing method thereof - Google Patents
DPA ceramic circuit board and manufacturing method thereof Download PDFInfo
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- CN116283361A CN116283361A CN202211739935.2A CN202211739935A CN116283361A CN 116283361 A CN116283361 A CN 116283361A CN 202211739935 A CN202211739935 A CN 202211739935A CN 116283361 A CN116283361 A CN 116283361A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 143
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 144
- 239000002184 metal Substances 0.000 claims abstract description 144
- 238000007747 plating Methods 0.000 claims abstract description 108
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 238000009713 electroplating Methods 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
- 238000005429 filling process Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 199
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 48
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 44
- 239000002608 ionic liquid Substances 0.000 claims description 23
- 230000004048 modification Effects 0.000 claims description 19
- 238000012986 modification Methods 0.000 claims description 19
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 238000004080 punching Methods 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims 2
- 239000010949 copper Substances 0.000 abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052802 copper Inorganic materials 0.000 abstract description 6
- 230000035939 shock Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 2
- 239000012467 final product Substances 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 18
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000005553 drilling Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000005382 thermal cycling Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
Abstract
The invention belongs to the technical field of ceramic circuit substrates, and particularly discloses a DPA ceramic circuit board and a manufacturing method thereof. The invention adopts aluminum to replace copper in the prior art to prepare a brand new DPA ceramic circuit board, greatly improves the thermal shock resistance of the ceramic circuit board, and has no obvious fracture or damage after heat circulation for 1000 times at 0-200 ℃, and the performance is obviously superior to that of the DPC ceramic circuit board in the prior art. Meanwhile, compared with the DPC ceramic circuit board in the prior art, the DPA ceramic circuit board is also obviously lower than the DPC ceramic circuit board in weight, and has a certain help for reducing the weight of the final product. According to the manufacturing method, the electroplating process of the metal Al is reasonably allocated, and the electroplating solution is selected, so that the plating process of the metal Al on the first metal layer is realized, and the good hole filling process on the ceramic substrate and the good front and back conduction effect are realized.
Description
Technical Field
The invention belongs to the technical field of ceramic circuit substrates, and particularly relates to a DPA ceramic circuit board and a manufacturing method thereof.
Background
Currently, the substrate used to package transistors is mainly ceramic printed circuit board (DPC). Wherein the ceramic substrate is generally made of aluminum nitride, and the heat conductivity coefficient of the material is 150W (m.K) -1 ～200W·(m·K) -1 The heat conduction performance is excellent; and copper has excellent conductivity and is suitable for high-current devices.
However, under a part of use scenes, the circuit board is in a continuously-switched state, high-frequency current on-off change exists, the temperature of the circuit board is generally continuously changed between 0 ℃ and 200 ℃, so that the electronic device is continuously in the middle of the change of high and low temperatures, the thermal shock resistance of copper is poor, the service life of the DPC ceramic circuit board is short under the use scenes, the ceramic board is easy to break and damage, and the DPC ceramic circuit board is difficult to be qualified in the use scenes.
Disclosure of Invention
In order to solve the problem that the DPC ceramic circuit board in the prior art cannot be qualified for the application scene of high-frequency current on-off variation, the DPA ceramic circuit board is prepared by replacing copper with aluminum, and the thermal shock resistance of the ceramic circuit board is greatly improved.
The invention adopts the following technical scheme:
a DPA ceramic circuit board comprises a ceramic substrate, a first metal layer, a second metal layer and a metal modification layer which are sequentially laminated.
Wherein, the ceramic substrate positioned at the bottom layer can be AlN or Al 2 O 3 、Si 3 N 4 BN, etc. as a material. As the first metal layer, any one or a combination of Ag, cu, mg, ti, al and the like can be used. And the second metal layer adopts Al to replace Cu in the prior DPC ceramic circuit board as a material. And the metal finishing layer of the outermost layer adopts any one or a combination of Au, ag, ni, sn, pd and the like as a material.
Specifically, in the DPA ceramic circuit board, through holes are distributed on a ceramic substrate in a matrix arrangement, and a first metal layer is coated on the upper and lower surfaces of the ceramic substrate with the through holes and the inner walls of the through holes. The upper and lower surfaces of the ceramic substrate are respectively provided with a plating resisting space of the first metal layer. The second metal layer is covered on the first metal layer and filled in the through hole. The metal modification layer covers the second metal layer.
Typically, the diameter of the via is 100 μm to 1000 μm, which allows the front and back to be conducted after the second metal layer is filled. The diameter of the through hole is adjusted according to the conductivity requirement, the diameter cannot be smaller than 100 mu m, otherwise, the through hole cannot be filled, and the strength of the ceramic substrate is affected when the diameter is larger than 1000 mu m.
The plating thickness of the first metal layer may be 0.01 μm to 10 μm; the depth of the plating resisting space is generally 1-10 mu m larger than the thickness of the second metal layer, and the thickness of the plating layer of the second metal layer is controlled to be about 10-200 mu m; and the thickness of the single-layer plating layer of the metal modification layer is 50 nm-500 nm.
The total thickness of the metal modification layer is not limited, in general, the thicker the metal modification layer is, the better the performance of the obtained circuit board is, but the more complex the corresponding process is and the higher the manufacturing cost is, so that the thickness of the metal modification layer is generally controlled according to the specific performance requirement of the circuit board.
The invention also provides a manufacturing method of the DPA ceramic circuit board, which comprises the following steps:
s1, punching holes on a ceramic substrate to form through holes in matrix arrangement;
s2, plating a first metal on the ceramic substrate with the through holes, and forming a first metal layer on the upper surface and the lower surface of the ceramic substrate and the inner walls of the through holes;
s3, manufacturing circuits on the first metal layers on the upper surface and the lower surface of the ceramic substrate by using dry films to form a plating resist;
s4, plating metal aluminum on the ceramic substrate with the plating resistance layer, and filling the first metal layer and the inside of the through hole to form a second metal layer;
s5, plating a third metal on the second metal layer, and forming a metal modification layer on the second metal layer;
s6, etching to remove the plating resist and the first metal layer below the plating resist, and forming a plating resist space of the first metal layer on the upper surface and the lower surface of the ceramic substrate.
Specifically, in step S2, the first metal may be any one of Ag, cu, mg, ti, al or a combination thereof, and the plating method may be any one of magnetron sputtering, plasma evaporation, high-temperature evaporation plating, electroplating, or the like.
In step S4, alCl is used 3 -EMIC ionic liquid is used as electroplating liquid, the current density is controlled to be 1 ASD-10 ASD, and a pulse filling electroplating pore-filling process is adopted to form a second metal layer on the surface of the first metal layer and inside the through hole. The current density is generally selected according to the thickness of the plating layer, for example, about 5ASD is used for plating 100 μm.
Further, the electroplating solution further comprises toluene and glycol (controlled toluene, glycol, alCl) added into EMIC ionic liquid 3 The mass ratio of the EMIC is 0.5-1:0.6-1:1), the combined action of the EMIC and the additive reduces the viscosity of the ionic liquid on one hand, improves the conductivity of the liquid on the other hand, and ensures that the final pulse electroplating through hole filling process is finished.
The dosage control of the toluene and the ethylene glycol is very important for realizing the process, wherein the content of the toluene is lower than 0.5 or higher than 1, which can cause the excessive viscosity of the ionic liquid, and finally the through hole cannot be filled; and if the ethylene glycol is lower than 0.6 or higher than 1, the conductivity of the ionic liquid is too small, and the quality of filling holes is affected.
In step S5, the third metal may be any one of Ni, ag, pd, au, sn and the like or a combination thereof, and the plating method may employ electroless plating or electroplating.
The ceramic substrate and the punching thereof, the first metal layer, the metal modification layer and the like are the same as those of the prior art DPC ceramic circuit board, and the art skilled in the art refers to the related process of the prior art DPC ceramic circuit board, and will not be described in detail here.
According to the invention, aluminum is adopted to replace copper in the prior art to prepare a brand new DPA ceramic circuit board, so that the thermal shock resistance of the ceramic circuit board is greatly improved, no obvious fracture or damage is found when the ceramic circuit board is subjected to thermal cycling for 1000 times at 0-200 ℃, and the performance is obviously superior to that of the DPC ceramic circuit board in the prior art (obvious cracks appear on the surface after the ceramic circuit board is subjected to thermal cycling for 1000 times at 0-200 ℃). Therefore, the device can be applied to high-power or high-frequency devices such as IGBT (insulated gate bipolar transistor), MOSFET (metal oxide semiconductor field effect transistor) and the like, and the devices are mainly applied to controllers of products such as electric automobiles, solar generators, radars and the like.
Meanwhile, compared with the DPC ceramic circuit board in the prior art, the density of aluminum is only one third of that of copper, so that the weight of the DPA ceramic circuit board is obviously lower than that of the DPC ceramic circuit board, and the DPA ceramic circuit board has a certain help for reducing the weight of a final product.
According to the manufacturing method, the electroplating process of the metal Al is reasonably allocated, and the electroplating solution is selected, so that the plating process of the metal Al on the first metal layer is realized, and the good hole filling process on the ceramic substrate and the good front and back conduction effect are realized.
Drawings
Fig. 1 to 6 are process route diagrams for manufacturing a DPA ceramic circuit board according to an embodiment of the invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided to explain the principles of the invention and its practical application so that others skilled in the art will be able to understand the invention for various embodiments and with various modifications as are suited to the particular use contemplated.
Fig. 1 to 6 show process route diagrams for manufacturing a DPA ceramic circuit board according to the embodiments described below.
Specifically, it comprises the following steps:
step one: as shown in fig. 1, the ceramic substrate 1 is perforated with through holes 11 arranged in a matrix.
Step two: as shown in fig. 2, a first metal is plated on a ceramic substrate 1 having a through hole 11, and a first metal layer 2 is formed on the upper and lower surfaces of the ceramic substrate 1 and the inner wall of the through hole 11.
Step three: as shown in fig. 3, a circuit is formed on the first metal layer 2 on the upper and lower surfaces of the ceramic substrate 1 using a dry film, and a plating resist 3 is formed.
Step four: as shown in fig. 4, a ceramic substrate 1 having a plating resist 3 is plated with aluminum metal, and a second metal layer 4 is formed on the first metal layer 2 and inside the through hole 11.
Step five: as shown in fig. 5, a third metal is plated on the second metal layer 4, and a metal finishing layer 5 is formed on the second metal layer 4.
Step six: as shown in fig. 6, the plating resist 3 and a part of the first metal layer 2 located below the plating resist 3 are etched away, and a plating resist space 12 is formed on the surface of the ceramic substrate 1 having the first metal layer 2, thereby obtaining a DPA ceramic wiring board.
Example 1
The embodiment provides a DPA ceramic circuit board, which is manufactured by adopting the following process:
1) Laser drilling is adopted on the AlN ceramic substrate, and the diameter of the through hole is 150 mu m.
2) Ti is plated on the AlN ceramic substrate by magnetron sputtering, the thickness of the plating layer is 0.1 mu m, cu is plated on the Ti by magnetron sputtering, and the thickness of the plating layer is 1 mu m.
3) The first metal layer was routed on its surface using a dry film with a thickness of about 110 μm.
4) Electroplating a second metal layer on the first metal layer by adopting AlCl 3 EMIC ionic liquids (toluene, ethylene glycol, alCl) 3 -EMIC mass ratio of 0.5:0.8:1) as electroplating solution, current density of 5ASD, and coating thickness of about 100 μm.
5) Plating a layer of Ni on Al by adopting chemical plating, wherein the thickness of the plating layer is about 0.5 mu m, and plating a layer of Au on Ni, and the thickness of the plating layer is about 0.2 mu m.
6) And etching to remove the dry film circuit and the first layer of metal below the dry film circuit.
That is, the DPA ceramic circuit board provided in this embodiment includes an AlN ceramic substrate having a matrix of through holes, first metal layers formed of stacked Ti layers and Cu layers plated on upper and lower surfaces of the AlN ceramic substrate and inner walls of the through holes, plating resists located on upper and lower surfaces of the AlN ceramic substrate covered with the first metal layers, a second metal layer Al layer plated on the first metal layer and filled inside the through holes, and a metal modification layer formed of stacked Ni layers and Au layers plated on the second metal layer and flush with surfaces of the plating resists.
The DPA ceramic circuit board is observed to have perfect surface coating and complete filling holes, and the DPA ceramic circuit board is subjected to thermal cycle of 0-200 ℃ for 1000 times, so that no obvious change on the surface of the DPA ceramic circuit board is found.
Example 2
The embodiment provides a DPA ceramic circuit board, which is manufactured by adopting the following process:
1) Laser drilling is adopted on the AlN ceramic substrate, and the diameter of the through hole is 300 mu m.
2) Ti is plated on the AlN ceramic substrate by magnetron sputtering, the thickness of the plating layer is 0.1 mu m, cu is plated on the Ti by magnetron sputtering, and the thickness of the plating layer is 1 mu m.
3) The first metal layer was routed on its surface using a dry film with a thickness of about 110 μm.
4) Electroplating a second metal layer on the first metal layer by adopting AlCl 3 EMIC ionic liquids (toluene, ethylene glycol, alCl) 3 -the mass ratio of EMIC is 0.8:0.8:1) as plating solution, the current density is 5ASD, and the thickness of the plating layer is about 100 μm.
5) Plating a layer of Ni on Al by adopting chemical plating, wherein the thickness of the plating layer is about 0.5 mu m, and plating a layer of Au on Ni, and the thickness of the plating layer is about 0.2 mu m.
6) And etching to remove the dry film circuit and the first layer of metal below the dry film circuit.
That is, the DPA ceramic circuit board provided in this embodiment includes an AlN ceramic substrate having a matrix of through holes, first metal layers formed of stacked Ti layers and Cu layers plated on upper and lower surfaces of the AlN ceramic substrate and inner walls of the through holes, plating resists located on upper and lower surfaces of the AlN ceramic substrate covered with the first metal layers, a second metal layer Al layer plated on the first metal layer and filled inside the through holes, and a metal modification layer formed of stacked Ni layers and Au layers plated on the second metal layer and flush with surfaces of the plating resists.
The DPA ceramic circuit board is observed to have perfect surface coating and complete filling holes, and the DPA ceramic circuit board is subjected to thermal cycle of 0-200 ℃ for 1000 times, so that no obvious change on the surface of the DPA ceramic circuit board is found.
Example 3
The embodiment provides a DPA ceramic circuit board, which is manufactured by adopting the following process:
1) Laser drilling is adopted on the AlN ceramic substrate, and the diameter of the through hole is 500 mu m.
2) Ti is plated on the AlN ceramic substrate by magnetron sputtering, the thickness of the plating layer is 0.1 mu m, cu is plated on the Ti by magnetron sputtering, and the thickness of the plating layer is 1 mu m.
3) The first metal layer was routed on its surface using a dry film with a thickness of about 110 μm.
4) Electroplating a second metal layer on the first metal layer by adopting AlCl 3 EMIC ionic liquids (toluene, ethylene glycol, alCl) 3 The ratio of the mass of the EMIC is 1:0.8:1) as a plating solution, the current density is 5ASD, and the thickness of the plating layer is about 100 μm.
5) Plating a layer of Ni on Al by adopting chemical plating, wherein the thickness of the plating layer is about 0.5 mu m, and plating a layer of Au on Ni, and the thickness of the plating layer is about 0.2 mu m.
6) And etching to remove the dry film circuit and the first layer of metal below the dry film circuit.
That is, the DPA ceramic circuit board provided in this embodiment includes an AlN ceramic substrate having a matrix of through holes, first metal layers formed of stacked Ti layers and Cu layers plated on upper and lower surfaces of the AlN ceramic substrate and inner walls of the through holes, plating resists located on upper and lower surfaces of the AlN ceramic substrate covered with the first metal layers, a second metal layer Al layer plated on the first metal layer and filled inside the through holes, and a metal modification layer formed of stacked Ni layers and Au layers plated on the second metal layer and flush with surfaces of the plating resists.
The DPA ceramic circuit board is observed to have perfect surface coating and complete filling holes, and the DPA ceramic circuit board is subjected to 1000 times of thermal cycles at 0-200 ℃ to find that the surface of the DPA ceramic circuit board has no obvious change.
Example 4
The embodiment provides a DPA ceramic circuit board, which is manufactured by adopting the following process:
1) Laser drilling is adopted on the AlN ceramic substrate, and the diameter of the through hole is 600 mu m.
2) Ti is plated on the AlN ceramic substrate by magnetron sputtering, the thickness of the plating layer is 0.1 mu m, cu is plated on the Ti by magnetron sputtering, and the thickness of the plating layer is 1 mu m.
3) The first metal layer was routed on its surface using a dry film with a thickness of about 110 μm.
4) Electroplating a second metal layer on the first metal layer by adopting AlCl 3 EMIC ionic liquids (toluene, ethylene glycol, alCl) 3 The ratio of the mass of the EMIC is 1:0.6:1) as a plating solution, the current density is 5ASD, and the thickness of the plating layer is about 100 μm.
5) Plating a layer of Ni on Al by adopting chemical plating, wherein the thickness of the plating layer is about 0.5 mu m, and plating a layer of Au on Ni, and the thickness of the plating layer is about 0.2 mu m.
6) And etching to remove the dry film circuit and the first layer of metal below the dry film circuit.
That is, the DPA ceramic circuit board provided in this embodiment includes an AlN ceramic substrate having a matrix of through holes, first metal layers formed of stacked Ti layers and Cu layers plated on upper and lower surfaces of the AlN ceramic substrate and inner walls of the through holes, plating resists located on upper and lower surfaces of the AlN ceramic substrate covered with the first metal layers, a second metal layer Al layer plated on the first metal layer and filled inside the through holes, and a metal modification layer formed of stacked Ni layers and Au layers plated on the second metal layer and flush with surfaces of the plating resists.
The DPA ceramic circuit board is observed to have perfect surface coating and complete filling holes, and the DPA ceramic circuit board is subjected to 1000 times of thermal cycles at 0-200 ℃ to find that the surface of the DPA ceramic circuit board has no obvious change.
Example 5
The embodiment provides a DPA ceramic circuit board, which is manufactured by adopting the following process:
1) Laser drilling is adopted on the AlN ceramic substrate, and the diameter of the through hole is 800 mu m.
2) Ti is plated on the AlN ceramic substrate by magnetron sputtering, the thickness of the plating layer is 0.1 mu m, cu is plated on the Ti by magnetron sputtering, and the thickness of the plating layer is 1 mu m.
3) The first metal layer was routed on its surface using a dry film with a thickness of about 110 μm.
4) Electroplating a second metal layer on the first metal layer by adopting AlCl 3 EMIC ionic liquids (toluene, ethylene glycol, alCl) 3 The ratio of the mass of the EMIC is 1:1:1) is used as the electroplating solution for electroplating, the current density is 5ASD, and the thickness of the coating is about 100 mu m.
5) Plating a layer of Ni on Al by adopting chemical plating, wherein the thickness of the plating layer is about 0.5 mu m, and plating a layer of Au on Ni, and the thickness of the plating layer is about 0.2 mu m.
6) And etching to remove the dry film circuit and the first layer of metal below the dry film circuit.
That is, the DPA ceramic circuit board provided in this embodiment includes an AlN ceramic substrate having a matrix of through holes, first metal layers formed of stacked Ti layers and Cu layers plated on upper and lower surfaces of the AlN ceramic substrate and inner walls of the through holes, plating resists located on upper and lower surfaces of the AlN ceramic substrate covered with the first metal layers, a second metal layer Al layer plated on the first metal layer and filled inside the through holes, and a metal modification layer formed of stacked Ni layers and Au layers plated on the second metal layer and flush with surfaces of the plating resists.
The DPA ceramic circuit board is observed to have perfect surface coating and complete filling holes, and the DPA ceramic circuit board is subjected to 1000 times of thermal cycles at 0-200 ℃ to find that the surface of the DPA ceramic circuit board has no obvious change.
In order to verify the importance of each process parameter in the manufacturing method in each of the above examples, the following comparative experiments were performed.
Comparative example 1
In the description of this comparative example, the same points as those of embodiment 1 are not described here again, and only the differences from embodiment 1 are described. This comparative example differs from example 1 in that AlCl is used 3 EMIC ionic liquids (toluene, ethylene glycol, alCl) 3 -the mass ratio of EMIC is 0.2:1:1) as plating solution; the remainder are described with reference to example 1And manufacturing and obtaining the first comparison DPA ceramic circuit board.
The DPA ceramic circuit board is observed, and the through holes of the DPA ceramic circuit board can not be filled in the electroplating process. Analysis shows that the viscosity of the ionic liquid is large due to less toluene added into the ionic liquid, so that the pores cannot be effectively wetted, and the through holes cannot be filled finally.
Comparative example 2
In the description of this comparative example, the same points as those of embodiment 5 are not described here again, and only the differences from embodiment 1 are described. This comparative example differs from example 5 in that AlCl is used 3 EMIC ionic liquids (toluene, ethylene glycol, alCl) 3 -the mass ratio of EMIC is 1.5:1:1) as plating solution; the second comparative DPA ceramic circuit board was made as described in example 5.
The DPA ceramic circuit board is observed, and the through holes of the DPA ceramic circuit board can not be filled in the electroplating process. Analysis shows that the viscosity of the ionic liquid is large due to the fact that more toluene is added into the ionic liquid, the inside of the hole cannot be effectively wetted, and therefore the through hole cannot be filled up finally.
Comparative example 3
In the description of this comparative example, the same points as those of embodiment 4 are not described here again, and only the differences from embodiment 1 are described. This comparative example differs from example 4 in that AlCl is used 3 EMIC ionic liquids (toluene, ethylene glycol, alCl) 3 -the mass ratio of EMIC is 1:0.2:1) as plating solution; a third comparative DPA ceramic circuit board was fabricated as described with reference to example 4.
The DPA ceramic circuit board is observed, and the quality problems of tiny holes, cracks and the like of partial hole filling are found. Analysis shows that the ionic liquid is caused by low conductivity due to the fact that the ethylene glycol is added into the ionic liquid.
Comparative example 4
In the description of this comparative example, the same points as those of embodiment 1 are not described here again, and only the differences from embodiment 1 are described. This comparative example differs from example 1 in that AlCl is used 3 -EMIC ionic liquidsBody (toluene, glycol, alCl) 3 -the mass ratio of EMIC is 0.5:1.5:1) as plating solution; the fourth comparative DPA ceramic circuit board was fabricated as described with reference to example 1.
The DPA ceramic circuit board is observed, and the quality problems of tiny holes, cracks and the like of partial hole filling are found. Analysis shows that the ionic liquid is caused by the fact that the electric conductivity of the ionic liquid is low due to the fact that more ethylene glycol is added into the ionic liquid.
Comparative example 5
The comparative example provides a manufacturing process of a DPC ceramic circuit board in the prior art, which specifically adopts the following steps:
1) Laser drilling is adopted on the AlN ceramic substrate, and the diameter of the through hole is 150 mu m.
2) Ti is plated on the AlN ceramic substrate by magnetron sputtering, the thickness of the plating layer is 0.1 mu m, cu is plated on the Ti by magnetron sputtering, and the thickness of the plating layer is 1 mu m.
3) The first metal layer was routed on its surface using a dry film with a thickness of about 110 μm.
4) Electroplating a second metal layer on the first metal layer by using CuSO 4 /H 2 SO 4 The solution was used as an electrolyte with a current density of 5ASD and a coating thickness of about 100 μm.
5) Plating a layer of Ni on Al by adopting chemical plating, wherein the thickness of the plating layer is about 0.5 mu m, and plating a layer of Au on Ni, and the thickness of the plating layer is about 0.2 mu m.
6) And etching to remove the dry film circuit and the first layer of metal below the dry film circuit.
Thus, a common DPC ceramic circuit board in the prior art is manufactured by adopting the DPC process.
After 1000 times of thermal cycles at 0-200 ℃, cracks appear on the surface after about 500 times of thermal cycles. After 1000 times the surface was broken.
In conclusion, in the manufacturing of the DPA ceramic circuit board, reasonable control of the consumption of each component in the electrolyte is also critical to realizing a good pore-filling process on the basis of meeting the requirement of plating a planar Al layer. Meanwhile, compared with the DPC ceramic circuit board in the prior art, the DPA ceramic circuit board has better thermal shock resistance.
Claims (9)
1. The DPA ceramic circuit board is characterized by comprising a ceramic substrate, a first metal layer, a second metal layer and a metal modification layer which are arranged in a laminated manner;
the ceramic substrate is provided with through holes which are arranged in a matrix, and the upper surface and the lower surface of the ceramic substrate are respectively provided with a plating resisting space; the first metal layer is plated on the upper and lower surfaces of the ceramic substrate except the plating resistance space and the inner wall of the through hole; the second metal layer is plated on the first metal layer and filled in the through holes so as to electrically connect the upper surface and the lower surface of the ceramic substrate; the metal modification layer is plated on the surface of the second metal layer;
wherein the material of the second metal layer is metal aluminum.
2. The DPA ceramic circuit board as claimed in claim 1, wherein the ceramic substrate is made of AlN or Al 2 O 3 、Si 3 N 4 Either one of BN; the material of the first metal layer is any one or a lamination combination of at least two of Ag, cu, mg, ti, al; the material of the metal modification layer is any one or a lamination combination of at least two of Au, ag, ni, sn, pd.
3. The DPA ceramic circuit board of claim 2, wherein the diameter of the through-hole is 100 μm to 1000 μm; the plating thickness of the first metal layer is 0.01-10 mu m; the depth of the plating resisting space is 1-10 mu m larger than the thickness of the second metal layer; the thickness of the plating layer of the second metal layer is 10-200 mu m; the thickness of the single-layer plating layer of the metal modification layer is 50 nm-500 nm.
4. The manufacturing method of the DPA ceramic circuit board is characterized by comprising the following steps:
s1, punching holes on a ceramic substrate to form through holes in matrix arrangement;
s2, plating a first metal on the ceramic substrate with the through holes, and forming a first metal layer on the upper surface and the lower surface of the ceramic substrate and the inner walls of the through holes;
s3, manufacturing circuits on the first metal layers on the upper surface and the lower surface of the ceramic substrate to form a plating resist;
s4, plating metal aluminum on the ceramic substrate with the plating resistance layer, and filling the first metal layer and the inside of the through hole to form a second metal layer;
s5, plating a third metal on the second metal layer, and forming a metal modification layer on the second metal layer;
s6, etching to remove the plating resist and the first metal layer below the plating resist, and forming a plating resist space of the first metal layer on the upper surface and the lower surface of the ceramic substrate to obtain the DPA ceramic circuit board.
5. The method according to claim 4, wherein AlCl is used in the step S4 3 -EMIC ionic liquid is used as electroplating liquid, the current density is controlled to be 1 ASD-10 ASD, and a pulse filling electroplating pore-filling process is adopted to plate metal aluminum; wherein the electroplating solution is toluene, glycol and AlCl 3 -EMIC is mixed according to the mass ratio of 0.5-1:0.6-1:1.
6. The method according to claim 4 or 5, wherein in the step S2, the first metal is selected from one or a combination of at least two of Ag, cu, mg, ti, al, and the first metal has a plating thickness of 0.01 μm to 10 μm, and/or is plated by one of magnetron sputtering, plasma evaporation, high temperature evaporation plating, and electroplating;
in the step S5, the third metal is selected from any one or a laminated combination of at least two of Au, ag, ni, sn, pd, the thickness of the single-layer plating layer of the third metal is 50 nm-500 nm, and/or the plating is performed by adopting chemical plating or electroplating.
7. The method according to claim 4 or 5, wherein in the step S1, the diameter of the through hole is 100 μm to 1000 μm.
8. The method according to claim 4 or 5, wherein in the step S3, a dry film method is used to form a circuit on the first metal layer to form the resist layer.
9. The method according to claim 8, wherein the thickness of the plating resist is 1 μm to 10 μm larger than the thickness of the second metal layer.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000183495A (en) * | 1998-12-10 | 2000-06-30 | Ibiden Co Ltd | Forming method for conductor circuit and manufacture of printed-wiring board |
| JP2006060149A (en) * | 2004-08-23 | 2006-03-02 | Fuji Photo Film Co Ltd | Manufacturing method of maultilayer wiring board |
| CN103533765A (en) * | 2012-08-07 | 2014-01-22 | 立诚光电股份有限公司 | Method for improving metal surface roughness on ceramic through hole substrate and ceramic substrate |
| CN107172808A (en) * | 2016-03-08 | 2017-09-15 | 讯芯电子科技（中山）有限公司 | Two-sided direct copper plating ceramic circuit board and its manufacture method |
| CN108184312A (en) * | 2017-12-29 | 2018-06-19 | 赛创电气（铜陵）有限公司 | A kind of double-side conduction ceramic circuit-board and preparation method thereof |
-
2022
- 2022-12-31 CN CN202211739935.2A patent/CN116283361B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000183495A (en) * | 1998-12-10 | 2000-06-30 | Ibiden Co Ltd | Forming method for conductor circuit and manufacture of printed-wiring board |
| JP2006060149A (en) * | 2004-08-23 | 2006-03-02 | Fuji Photo Film Co Ltd | Manufacturing method of maultilayer wiring board |
| CN103533765A (en) * | 2012-08-07 | 2014-01-22 | 立诚光电股份有限公司 | Method for improving metal surface roughness on ceramic through hole substrate and ceramic substrate |
| CN107172808A (en) * | 2016-03-08 | 2017-09-15 | 讯芯电子科技（中山）有限公司 | Two-sided direct copper plating ceramic circuit board and its manufacture method |
| CN108184312A (en) * | 2017-12-29 | 2018-06-19 | 赛创电气（铜陵）有限公司 | A kind of double-side conduction ceramic circuit-board and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 张骐等: "甲苯稀释对AlCl3-EMIC型粒子液体电镀铝工艺氢脆性的影响", 《电镀与涂饰》, vol. 39, no. 8, pages 469 * |
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