CN116256345A - Fluorescence detection circuit, fluorescence detection device and fluorescence detection method - Google Patents

Fluorescence detection circuit, fluorescence detection device and fluorescence detection method Download PDF

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Publication number
CN116256345A
CN116256345A CN202310149923.2A CN202310149923A CN116256345A CN 116256345 A CN116256345 A CN 116256345A CN 202310149923 A CN202310149923 A CN 202310149923A CN 116256345 A CN116256345 A CN 116256345A
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circuit
fluorescence detection
voltage value
feedback path
resistance
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杨建洪
庞志
陈总威
谢佳裕
张文杰
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Shenzhen Lightsun Technology Co ltd
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Shenzhen Lightsun Technology Co ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"

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  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
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  • Life Sciences & Earth Sciences (AREA)
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  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Pathology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Abstract

The application provides a fluorescence detection circuit, fluorescence detection equipment and a fluorescence detection method, and relates to the field of electronic power. The fluorescence detection circuit comprises a photosensitive device, a photoelectric conversion circuit and a control circuit, wherein the photosensitive device is used for detecting photocurrent corresponding to fluorescence emitted by a substance to be detected; the photoelectric conversion circuit is connected with the photosensitive device and comprises a plurality of resistance feedback paths, and the photoelectric conversion circuit is used for determining a voltage value according to the photocurrent and the gated resistance feedback paths; the control circuit is connected with the photoelectric conversion circuit and is used for determining a target resistance feedback path from the multiple resistance feedback paths according to the voltage value and controlling the photoelectric conversion circuit to gate the target resistance feedback path so as to detect fluorescence emitted by the substance to be detected through the target resistance feedback path. The embodiment of the application aims to conveniently switch the resistance feedback paths corresponding to different resistance values so as to accurately detect fluorescence emitted by a substance to be detected.

Description

Fluorescence detection circuit, fluorescence detection device and fluorescence detection method
Technical Field
The present disclosure relates to the field of electronic power, and in particular, to a fluorescence detection circuit, a fluorescence detection apparatus, and a fluorescence detection method.
Background
Fluorescence refers to a substance having a structure that absorbs exciting electromagnetic radiation, and after absorbing the external electromagnetic radiation, emits luminescence. Typically, a substance emits fluorescence at a lower frequency than the light that excites the substance, at a longer wavelength, and with lower photon energy. Unlike phosphorescence, a substance stops emitting fluorescence almost immediately while excitation light is lost.
The existing fluorescence detection circuit detects through a photomultiplier and a special filter. Because the photomultiplier is the finished product module, receives the module size restriction, and the components and parts of this module are fixed, and the degree of freedom of design is lower, consequently only can adopt the resistance feedback path of fixed resistance to carry out fluorescence detection, can't switch the resistance feedback path that different resistance correspond fast to lead to fluorescence detection's convenience and degree of accuracy lower.
Disclosure of Invention
The main purpose of the application is to provide a fluorescence detection circuit, fluorescence detection equipment and a fluorescence detection method, aiming at conveniently switching resistance feedback paths corresponding to different resistance values so as to accurately detect fluorescence emitted by a substance to be detected.
In a first aspect, the present application provides a fluorescence detection circuit, where the fluorescence detection circuit includes a photosensitive device, a photoelectric conversion circuit, and a control circuit, where the photosensitive device is configured to detect a photocurrent corresponding to fluorescence emitted by a substance to be detected; the photoelectric conversion circuit is connected with the photosensitive device and comprises a plurality of resistance feedback paths, and the photoelectric conversion circuit is used for determining a voltage value according to the photocurrent and the gated resistance feedback paths; the control circuit is connected with the photoelectric conversion circuit and is used for determining a target resistance feedback path from a plurality of resistance feedback paths according to the voltage value and controlling the photoelectric conversion circuit to gate the target resistance feedback path so as to detect fluorescence emitted by the substance to be detected through the target resistance feedback path.
In a second aspect, the present application further provides a fluorescence detection method using a fluorescence detection circuit as described above, the method comprising:
controlling the photoelectric conversion circuit to gate a preset resistance feedback path, and acquiring a voltage value and a photoelectric current value corresponding to the preset resistance feedback path; determining a target resistance feedback path from a plurality of resistance feedback paths according to the voltage value and the photoelectric current value; and controlling the photoelectric conversion circuit to gate the target resistance feedback path so as to detect fluorescence emitted by the substance to be detected through the target resistance feedback path.
In a third aspect, the present application also provides a fluorescence detection apparatus comprising a fluorescence detection circuit as described above.
The application provides a fluorescence detection circuit, fluorescence detection equipment and a fluorescence detection method. The fluorescence detection circuit comprises a photosensitive device, a photoelectric conversion circuit and a control circuit, wherein the photosensitive device is used for detecting photocurrent corresponding to fluorescence emitted by a substance to be detected; the photoelectric conversion circuit is connected with the photosensitive device and comprises a plurality of resistance feedback paths, and the photoelectric conversion circuit is used for determining a voltage value according to the photocurrent and the gated resistance feedback paths; the control circuit is connected with the photoelectric conversion circuit and is used for determining a target resistance feedback path from a plurality of resistance feedback paths according to the voltage value and controlling the photoelectric conversion circuit to gate the target resistance feedback path so as to detect fluorescence emitted by the substance to be detected through the target resistance feedback path. According to the fluorescence detection circuit, the resistance feedback paths corresponding to different resistance values can be conveniently switched, the target resistance feedback path is determined through the voltage value, so that fluorescence emitted by a substance to be detected can be accurately detected, and user experience is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic block diagram of a fluorescence detection circuit according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a fluorescence detection apparatus according to an embodiment of the present application;
fig. 3 is a schematic circuit diagram of a driving circuit according to an embodiment of the present application;
FIG. 4 is a schematic circuit diagram of another driving circuit according to an embodiment of the present disclosure;
fig. 5 is a schematic circuit diagram of a temperature detection circuit according to an embodiment of the present application;
fig. 6 is a schematic circuit diagram of a photoelectric conversion circuit according to an embodiment of the present application;
fig. 7 is a schematic circuit diagram of another photoelectric conversion circuit according to an embodiment of the present disclosure;
FIG. 8 is a schematic circuit diagram of an environmental sensor circuit according to an embodiment of the present disclosure;
FIG. 9 is a schematic block diagram of a fluorescence detection device according to an embodiment of the present disclosure;
FIG. 10 is a schematic flow chart of a fluorescence detection method according to an embodiment of the present disclosure;
reference numerals:
1000. a fluorescence detection device; 100. a fluorescence detection circuit; 10. a photosensitive device, 20 and a photoelectric conversion circuit; 30. a control circuit; 40. a light emitting device; 50. a driving circuit; 60. a thermistor; 70. a temperature detection circuit; 80. an environmental sensing circuit.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
Some embodiments of the present application are described in detail below with reference to the accompanying drawings. The following embodiments and features of the embodiments may be combined with each other without conflict.
With the intensive research of fluorescence phenomena, specific applications thereof are in fields such as petrochemicals, ores, medical treatment, biology and the like. Although the purpose and the scene of the application are different, such as detecting oils, screening minerals, marking proteins, etc., the operation process can be basically summarized as that a light source irradiates a substance, the substance emits fluorescence, and a photoreceptor detects the fluorescence.
Wherein the light source is typically selected to be a specific wavelength in a certain segment of the ultraviolet spectral range. The ultraviolet rays with the wavelength are conventionally obtained by a xenon lamp and a special filter. Substances having fluorescence emit fluorescence of a certain wavelength after absorbing ultraviolet rays. The wavelength is related to the nature of the substance itself, and different substances are not identical. The spectral range is typically from the near ultraviolet region to the visible green region. After the ultraviolet rays disappear, the fluorescence almost simultaneously disappears.
The choice of photoreceptor is related to the wavelength of fluorescence emitted by the substance to be measured. Since the energy of ultraviolet rays is not entirely concentrated on the substance, the intensity of fluorescence is generally very weak due to various factors such as reflection, refraction, and absorption of fluorescence by the optical device, and attenuation of fluorescence with the optical path length. The fluorescence detection is conventionally performed by a photomultiplier tube plus a special filter.
The existing fluorescence detection circuit detects through a photomultiplier and a special filter. Because the photomultiplier is the finished product module, receives the module size restriction, and the components and parts of this module are fixed, and the degree of freedom of design is lower, consequently only can adopt the resistance feedback path of fixed resistance to carry out fluorescence detection, can't switch the resistance feedback path that different resistance correspond fast to lead to fluorescence detection's convenience and degree of accuracy lower.
In order to solve the problems, the application provides a fluorescence detection circuit, fluorescence detection equipment and a fluorescence detection method, so that resistance feedback paths corresponding to different resistance values can be conveniently switched, a target resistance feedback path is determined through a voltage value, fluorescence emitted by a substance to be detected can be accurately detected, and user experience is improved.
Referring to fig. 1, fig. 1 is a schematic block diagram of a fluorescence detection circuit according to an embodiment of the present application.
As shown in fig. 1, the fluorescence detection circuit 100 includes a photosensitive device 10, a photoelectric conversion circuit 20, and a control circuit 30. The photosensitive device 10 is used for detecting photocurrent corresponding to fluorescence emitted by a substance to be detected; the photoelectric conversion circuit 20 is connected with the photosensitive device 10, the photoelectric conversion circuit 20 comprises a plurality of resistance feedback paths, the photoelectric conversion circuit 20 is used for determining a voltage value according to the photocurrent and the gated resistance feedback paths, the control circuit 30 is connected with the photoelectric conversion circuit 20, the control circuit 30 is used for determining a target resistance feedback path from the plurality of resistance feedback paths according to the voltage value, and the photoelectric conversion circuit 20 is controlled to gate the target resistance feedback path so as to detect fluorescence emitted by a substance to be detected through the target resistance feedback path.
The photosensitive device 10 is configured to receive fluorescence emitted by a substance to be detected, detect light intensity of the fluorescence, and convert the detected light intensity into a corresponding photoelectric value, so as to calculate a corresponding voltage value. The photoelectric conversion circuit 20 includes a plurality of resistor feedback paths, and each resistor feedback path has a different resistance value, so that the voltage value is determined by the resistance value and the photocurrent value corresponding to the gated resistor feedback path. The target resistance feedback path is a corresponding resistance feedback path which enables the calculated voltage value to be in an optimal voltage range.
For example, if the magnitude of the photocurrent is unchanged, the voltage value is determined by the resistance value corresponding to the resistive feedback path, and if the resistance value corresponding to the resistive feedback path is unchanged, the voltage value is determined by the magnitude of the photocurrent.
Specifically, the photosensitive device 10 detects a photocurrent corresponding to fluorescence emitted by the substance to be detected, the photoelectric conversion circuit 20 determines a voltage value corresponding to the path according to the photocurrent and a resistor feedback path that is gated in advance, the control circuit 30 determines whether the voltage value corresponding to the path is within an optimal voltage range, if not, determines a target resistor feedback path from a plurality of resistor feedback paths, and controls the photoelectric conversion circuit 20 to gate the target resistor feedback path so as to detect the fluorescence emitted by the substance to be detected through the target resistor feedback path, thereby accurately detecting the fluorescence emitted by the substance to be detected and improving user experience.
As shown in fig. 2, in some embodiments, the fluorescence detection circuit 100 further includes a light emitting device 40 and a driving circuit 50, where the light emitting device 40 is disposed on the substrate, the photosensitive device 10 is used to emit ultraviolet rays to irradiate the substance to be detected, so that the substance to be detected emits fluorescence, the driving circuit 50 is connected to the light emitting device 40 and the control circuit 30, and the driving circuit 50 is used to drive the light emitting device 40 to emit ultraviolet rays at a preset power. The control circuit 30 is further configured to determine a target power according to the voltage value, and control the driving circuit 50 to drive the light emitting device 40 to emit ultraviolet light at the target power.
The light emitting device 40 may be a light emitting diode, and may be used to emit ultraviolet light. The preset power may be the highest power of the led, and since the intensity of the fluorescence is usually very weak, the light emitting device 40 is driven to emit the ultraviolet light with the highest power, and then the power of the light emitting device 40 is adjusted according to the actual situation. The target power is a power corresponding to a fluorescence detection parameter (such as a voltage value and a temperature value) in an optimal range.
The prior art generally uses a xenon lamp plus a special filter to emit ultraviolet light. But with the development of material science in recent years, the manufacturing process of the light emitting diode is mature, and the light emitting diode can emit ultraviolet rays with a narrower wavelength range in the deep ultraviolet region. Compared with a xenon lamp, the light-emitting diode has higher conversion efficiency from electric energy to light energy with specific wavelength, and is more energy-saving under the same illumination intensity. The volume of the light-emitting diode and the required heat dissipation space are smaller, and the integration level of the whole design is easier to improve. The light-emitting diode part of the scene does not need a light filter, and the light path design is simpler. The LED has larger mass production scale and lower material cost. In some application scenarios, light emitting diodes are therefore very suitable as excitation light sources instead of xenon lamps.
Specifically, the fluorescence detection circuit 100 may further include a power supply circuit, a temperature detection circuit 70, an environment sensing circuit 80, a memory circuit, a relay circuit, a communication circuit, a power supply circuit, and the like. The above circuits are all connected to the control circuit 30 and are all provided on the main circuit board.
The main circuit board is connected with the substrate through a wire harness, the main circuit board is also connected with the photodiode through pin welding, and the main circuit board is also connected with an external interface through the wire harness. The light emitting diode should be welded on the substrate, so that the heat generated by the work of the light emitting diode can not be conducted rapidly through the plate, and the normal work of other circuits is affected. The model of the light emitting diode is selected according to the actual application scene of the circuit. Key parameters include the band range of ultraviolet light, emission angle, forward conduction voltage, full load current, etc.
Specifically, the driving circuit 50 drives the light emitting device 40 to emit ultraviolet light with a preset power to irradiate the substance to be detected, the light sensing device 10 detects a photocurrent corresponding to fluorescence emitted by the substance to be detected, the photoelectric conversion circuit 20 determines a voltage value corresponding to the path according to the photocurrent and a resistor feedback path which is gated in advance, then determines a target resistor feedback path from a plurality of resistor feedback paths, controls the photoelectric conversion circuit 20 to gate the target resistor feedback path, obtains the voltage value corresponding to the target resistor feedback path, determines a target power according to the voltage value corresponding to the target resistor feedback path, and controls the driving circuit 50 to drive the light emitting device 40 to emit ultraviolet light with the target power, thereby accurately detecting the fluorescence emitted by the substance to be detected and improving user experience.
For example, the driving circuit 50 drives the light emitting device 40 to emit ultraviolet light with the highest power to irradiate the substance to be measured, the light sensing device 10 detects the photocurrent corresponding to the fluorescence emitted by the substance to be measured, the photoelectric conversion circuit 20 determines the voltage value corresponding to the path according to the photocurrent and the resistance feedback path corresponding to the minimum resistance value that is gated in advance, and if the voltage value is not less than the first voltage value threshold, the path is taken as the target resistance feedback path; if the voltage value is smaller than the first voltage value threshold, the photoelectric conversion circuit 20 is controlled to gate the resistor feedback path corresponding to the larger resistor value until the voltage value of the corresponding path is larger than the first voltage value threshold, and the path is used as the target resistor feedback path.
The photoelectric conversion circuit 20 is controlled to gate the target resistor feedback path to obtain a voltage value corresponding to the target resistor feedback path, and if the voltage value is not greater than a second voltage value threshold value at the moment, the preset power is taken as target power; if the voltage value is greater than the second voltage value threshold, the driving circuit 50 is controlled to drive the light emitting device 40 to reduce the power until the voltage value of the corresponding power is less than the second voltage value threshold, and the power is taken as the target power, so that fluorescence emitted by the substance to be detected can be accurately detected, and the user experience is improved.
The first voltage value threshold is a lower limit value of the optimal voltage value range, the second voltage value threshold is an upper limit value of the optimal voltage value range, and specific sizes of the first voltage value threshold and the second voltage value threshold may be any values, which are not limited herein.
As shown in fig. 3, in some embodiments, the driving circuit 50 includes a driver U1, an input terminal of the driver U1 is connected to the control circuit 30, an output of the driver U1 is connected to the light emitting device 40, and the driver U1 is configured to control the light emitting device 40 to emit ultraviolet light according to a light emitting instruction emitted by the control circuit 30.
Specifically, the driver U1 is connected to the pulse width modulation (Pulse Width Modulation, PWM) signal output terminal of the control circuit 30 through the CTRL terminal, so as to control the corresponding light emitting device 40 to emit ultraviolet light according to the light emitting instruction emitted by the control circuit 30.
Specifically, the driving circuit 50 further includes a first capacitor C1, a first resistor R1, a second interface J2, a first inductor, and a first diode D1. The VIN end of the driver U1 is respectively connected with the first end of the first capacitor C1, the 5V power supply output by the power supply circuit and the first end of the first resistor R1, the second end of the first capacitor C1 is grounded, and the SET end of the driver U1 is connected to the second end of the first resistor R1 and the first pin of the second interface J2. The SW terminal of the driver U1 is connected to the first terminal of the first inductor and the anode of the first diode D1. The second end of the first inductor is connected to the second pin of the second interface J2. The cathode of the first diode D1 is connected with a 5V power supply output by a power supply circuit. The Ground (GND) terminal and the Exposed Pin (EP) terminal of the driver U1 are connected to the GND terminal of the power supply circuit. The anode of the light emitting diode is connected with the first pin of the second interface J2. The cathode of the light emitting diode is connected with the second pin of the second interface J2.
It should be noted that, the capacitance value of the first capacitor C1 needs to be set according to different circuit parameters such as the device characteristics of the specific model of the light emitting diode, the PWM signal frequency, and the like. The capacitance is generally 4.7. Mu.F or more, and is not limited herein. But it must be ensured that the rated voltage parameter of the capacitor C1 is 2 times or more the value of the output voltage of the power supply circuit.
The resistance value of the first resistor R1 is set according to the current required by the full load of the specific type of the light emitting diode, and is not limited herein. To reduce control errors, the first resistor R1 itself should be selected to have a high nominal resistance accuracy, a low temperature drift coefficient, and a large package size.
The second interface J2 may be selected from different models according to different application scenarios, which is not limited herein. But the second interface J2 comprises at least two separate pins. The rated current parameter of the second interface J2 must be greater than the maximum output current parameter set by the driver U1. The pin pitch of the second interface J2 must be guaranteed not to break down by the voltage drop across the led at the aforementioned maximum current conditions.
The inductance value of the first inductor needs to be set according to different circuit parameters such as the device characteristics of the specific model of the light emitting diode, the resistance value of the first resistor R1 and the like. The inductance is generally between 33 muH and 100 muH, and is not limited herein. But it must be ensured that the saturation current parameter of the first inductor exceeds the aforementioned maximum current. And preferably a full iron shell shielded package to reduce interference of electromagnetic radiation to surrounding circuitry.
The type of the first diode D1 depends on the characteristics of other parts of the circuit, and is not limited herein. But the nominal peak current parameter of the first diode D1 should be larger than the peak current of the first inductance. The nominal continuous current parameter should be greater than the maximum output current parameter set by the driver U1. The reverse breakdown voltage parameter should be 2 times or more the power supply circuit output voltage value. The driver U1 may be any hysteretic mode dc-to-dc buck converter.
As shown in fig. 4, the light emitting device 40 may include a plurality of light emitting diodes, for example.
The light emitting device 40 may be composed of three ultraviolet light emitting diodes with the same specification connected in series. Thus, the required driving voltage across the second interface J2 in fig. 4 is three times that of fig. 3. Correspondingly, the voltage output by the power supply circuit should also be adjusted upwards. Further, if more ultraviolet light emitting diodes with the same specification are connected in series on the same circuit, the output voltage of the power supply circuit only needs to be adjusted upwards. But not exceeding the maximum output voltage of the power supply circuit, the maximum input voltage of the driver U1, and the minimum of the other element-related voltage parameters.
Unlike the embodiment of fig. 3 and 4, the light emitting device 40 may be composed of two or more light emitting diodes of the same specification connected in parallel. To bring the full current of each led in the parallel circuit to a level in a single uv led circuit, a larger current output from the power supply circuit is required while reducing the resistance value of the first resistor R1. For example, the light source is four uv leds as shown in fig. 3 connected in parallel, and the resistance of the first resistor R1 should be set to be one fourth of the original resistance.
Further, the light emitting device 40 may be configured as a combination of a plurality of light emitting diodes connected in series, then in parallel, or first in parallel and then in series.
As shown in fig. 2, in some embodiments, the fluorescence detection circuit 100 further includes a thermistor 60 and a temperature detection circuit 70, the thermistor 60 being disposed on the substrate; the temperature detection circuit 70 is connected with the thermistor 60 and the control circuit 30, and the temperature detection circuit 70 is used for acquiring the resistance value of the thermistor 60; the control circuit 30 is further configured to determine a temperature of the substrate according to the resistance of the thermistor 60, adjust a preset power according to the temperature of the substrate, and control the driving circuit 50 to drive the light emitting device 40 to emit ultraviolet light with the adjusted preset power.
The resistance of the thermistor 60 increases with an increase in temperature and has a fixed resistance at a fixed temperature point. Since the thermistor 60 and the light emitting diode are both disposed on the substrate, the temperature of the light emitting diode can be reflected by the thermistor 60.
Specifically, the light emitting device 40 is controlled to emit ultraviolet light with a preset power, at this time, the resistance of the thermistor 60 is obtained, the temperature of the substrate is determined according to the resistance of the thermistor 60, if the temperature of the substrate exceeds a preset temperature threshold, the driving circuit 50 is controlled to reduce the power, and the light emitting device 40 is driven to emit ultraviolet light with the reduced power until the temperature of the substrate does not exceed the preset temperature threshold.
As shown in fig. 5, in some embodiments, the temperature detection circuit 70 includes a first interface J1 and a first amplifier U2, a first pin of the first interface J1 is connected to a first end of the thermistor 60, a second pin of the first interface J1 is connected to a first end of the thermistor 60 and the control circuit 30, a third pin of the first interface J1 is connected to a second end of the thermistor 60 and the control circuit 30, and a fourth pin of the first interface J1 is connected to a second end of the thermistor 60; the first input end of the first amplifier U2 is grounded, the second input end of the first amplifier U2 is connected with the fourth pin of the first interface J1, and the output end of the first amplifier U2 is connected with the first pin of the first interface J1.
Specifically, the temperature detection circuit 70 further includes a second capacitor C2, a third capacitor C3, and a second resistor R2. The non-inverting input end of the first amplifier U2 is connected to the 2.5V output end of the power supply circuit and the first end of the second capacitor C2, the second end of the second capacitor C2 is grounded, the inverting input end of the first amplifier U2 is connected to the fourth pin of the first interface J1 and the first end of the second resistor R2, and the second end of the second resistor R2 is grounded. The output of the first amplifier U2 is connected to a first pin of the first interface J1. The positive power supply input of the first amplifier U2 is connected to the 5V output of the supply circuit and to the first end of the third capacitor C3, the second end of the third capacitor C3 being grounded. The negative power supply input of the first amplifier U2 is connected to the GND terminal of the supply circuit.
Wherein the second capacitance C2 and the third capacitance C3 function as high frequency decoupling capacitors. The capacitance value is dependent on the noise generated by the physical circuit at this point and the noise acceptable for the application. The capacitance is generally 100nF or more, and is not limited herein. But it must be ensured that the rated voltage parameter of the capacitor is 1.5 times or more the output voltage value of the power supply circuit.
It should be noted that the first amplifier U2 may be an operational amplifier. The resistance value of the second resistor R2 is set according to the current required for the specific type of the thermistor 60, and is not limited herein.
In some embodiments, the photosensitive device 10 is a photodiode.
Wherein, the selection of the photoreceptor is related to the fluorescence wavelength emitted by the substance to be detected. Since the energy of ultraviolet rays is not entirely concentrated on the substance, the intensity of fluorescence is generally very weak due to various factors such as reflection, refraction, and absorption of fluorescence by the optical device, and attenuation of fluorescence with the optical path length. The fluorescence detection is conventionally performed by a photomultiplier tube plus a special filter. However, with the maturation of the photodiode manufacturing process in recent years, the light window surface of the photodiode can have better selectivity to specific wavelengths after special treatment. And with the development of analog circuit technology, it is also possible to amplify the signal of the photodiode with high magnification by a signal conditioning circuit. The photodiode has a simpler structure than the photomultiplier, and the integration level of the overall design is easier to improve. The photodiode belongs to a passive device, and the circuit design is simpler. The mass production scale of the photodiode is larger, and the material cost is lower. Photodiodes are therefore well suited to replace photomultiplier tubes as photosensitive devices 10 in certain application scenarios.
It should be noted that, the type of the photodiode depends on the application scenario, and the key parameters include the light window area, the spectrum range, the dark current, the conversion rate of the illumination intensity and the photocurrent, and the like.
As shown in fig. 6, in some embodiments, the photoelectric conversion circuit 20 includes a second amplifier U3 and a first multiplexer U4; the first input end of the second amplifier U3 is grounded, and the second input end of the second amplifier U3 is connected with the photosensitive device 10; the input end of the first multiplexer U4 is connected to the output end of the second amplifier U3, the output end of the first multiplexer U4 is connected to the control circuit 30, and the output end of the first multiplexer U4 is further connected to the second end of the second amplifier U3 to form a plurality of resistive feedback paths.
Specifically, the resistive feedback path includes a resistive element and a capacitive element, a first end of the resistive element is connected to a second end of the second amplifier U3, and a second end of the resistive element is connected to an output end of the first multiplexer U4; the capacitive element is connected in parallel with the resistive element.
The photoelectric conversion circuit 20 includes a first multiplexer U4 and a second multiplexer U5, and the first multiplexer U4 and the second multiplexer U5 each include 8 source terminals (i.e., include 8 resistive feedback paths) for illustration.
As shown in fig. 6, since 8 resistive feedback paths are included, the resistive element may include a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, and a tenth resistor R10, and the capacitive element includes a fourth capacitor C4, a fifth capacitor C5, a sixth capacitor C6, a seventh capacitor C7, an eighth capacitor C8, a ninth capacitor C9, a tenth capacitor C10, and an eleventh capacitor C11.
Illustratively, the third resistor R3 and the fourth capacitor C4 form a resistive feedback path, the fourth resistor R4 and the fifth capacitor C5 form a resistive feedback path, and so on. The capacitive element is a compensation capacitor of a resistive element connected across it, the capacitive element being used to establish an alternating current signal path in the high frequency fluorescent current signal. Their compensation capacitance value needs to be determined according to the signal frequency and the paired feedback resistance value, typically between a few pF and a few tens of pF.
Specifically, the non-inverting input terminal of the second amplifier U3 is connected to the GND terminal of the power supply circuit. The inverting input terminal of the second amplifier U3 is connected to the cathode of the photodiode, the first terminal of the resistive element and the first terminal of the capacitive element, and the second terminal of the resistive element and the second terminal of the capacitive element are connected in turn to respective source terminals of the second multiplexer U5. The positive power supply input of the second amplifier U3 is connected to the first terminal of the twelfth capacitor C12 and the 5V power supply output from the power supply circuit, and the second terminal of the twelfth capacitor C12 is grounded. The negative power supply input of the second amplifier U3 is connected to the GND terminal of the supply circuit. The output of the second amplifier U3 is connected to the common drain terminal of the first multiplexer U4. Pins 2 and 7 of the second amplifier U3 are Guard Ring (Guard Ring) output pins, which are connected to the GND terminal of the power supply circuit. The 8 th pin of the second amplifier U3 is an internal connection (Internal Connection, IC) pin, which is connected to the GND terminal of the power supply circuit. An anode of the photodiode is connected to a GND terminal of the power supply circuit.
The positive power supply input terminal of the second multiplexer U5 is connected to the first terminal of the thirteenth capacitor C13 and the 5V power supply output by the power supply circuit, and the second terminal of the thirteenth capacitor C13 is grounded. The negative supply input of the second multiplexer U5 is connected to the GND terminal of the supply circuit. The reference ground of the second multiplexer U5 is connected to the GND terminal of the supply circuit. The common drain terminal of the second multiplexer U5 is connected to the single-ended voltage analog acquisition channel VS1 of the analog-to-digital converter. Similarly, the positive power input terminal of the third multiplexer is connected to the first terminal of the fourteenth capacitor C14 and the 5V power output from the power supply circuit, and the second terminal of the fourteenth capacitor C14 is grounded. The control circuit 30 is connected to the SPI signal terminal of the analog-to-digital converter through a first serial peripheral interface (Serial Peripheral Interface, SPI) signal terminal.
In the embodiment shown in fig. 6, there are eight resistor feedback paths in total, so one eight-channel multiplexer may be used on the left and right sides, one sixteen-channel multiplexer may be used on the left and right sides, two four-channel multiplexers may be used on the left and right sides, or four single-pole double-throw switches may be used on the left and right sides. From the aspects of material cost, packaging size, wiring difficulty and control convenience, the use of one eight-channel multiplexer on each side is optimal.
Specifically, the fluorescence irradiates the photocurrent I generated by the photodiode L Feedback resistance value R F The voltage VS at the source terminal of the second multiplexer U5 has the following relation.
V S ＝I L ×R F
Due to the device characteristics of the photodiode, photocurrent flows from the cathode to the anode, and the anode of the photodiode is connected to GND of the power supply circuit. V (V) S Is a positive voltage with respect to GND.
The above relation indicates that the selection of the feedback resistance value is related to the intensity of photocurrent generated by fluorescence irradiation in the photodiode in the application scene. However, in practical applications, the photocurrent is often a value that is difficult to predict and fluctuates in several orders of magnitude. The present embodiment can accommodate different photocurrent intensities by selecting different feedback paths.
As shown in fig. 7, in some embodiments, the photosensitive device 10 may be formed by connecting a plurality of (e.g., four) photodiodes with the same specification in parallel. And the second multiplexer U5 is omitted, and each source terminal of the first multiplexer U4 is directly connected to one single-ended analog voltage acquisition channel of the analog-to-digital converter.
When a single photodiode has insufficient conversion efficiency to provide the required photocurrent, or multiple photodiodes are required for other technical reasons, they may be connected in parallel. Photocurrent I generated by fluorescent irradiation on each photodiode L1 、I L2 、I L3 、I L4 Feedback resistance value R S Voltage V at source terminal of first multiplexer U4 S The following relation is given.
V S ＝(I L1 +I L2 +I L3 +I L4 )×R F
When the selected analog-to-digital converter has enough analog voltage acquisition channels, one multi-channel multiplexer may be omitted. So as to reduce material cost, package size, wiring difficulty and improve control convenience.
In some embodiments, the photoelectric conversion circuit 20 further includes an analog-to-digital converter, which is connected to the output terminal of the first multiplexer U4 and the control circuit 30, and is configured to convert the voltage analog quantity of the output of the first multiplexer U4 into a voltage digital quantity.
The voltage value calculated and output by the first multiplexer U4 or the second multiplexer U5 is a voltage analog quantity, and the voltage analog quantity is required to be subjected to analog-to-digital conversion to be received and utilized by the control circuit 30, so that the voltage analog quantity output by the first multiplexer U4 can be converted into a voltage digital quantity by the analog-to-digital converter and output to the control circuit 30.
As shown in fig. 8, in some embodiments, fluorescence detection circuit 100 further includes an environmental sensing circuit 80, environmental sensing circuit 80 including an environmental sensor U6, a fifteenth capacitance C15, and a sixteenth capacitance C16. The environmental sensor U6 is connected with the control circuit 30 through a 4-wire SPI signal interface. The digital input/output power supply VDDIO end of the environment sensor U6 is connected to the first end of the fifteenth capacitor C15 and the 3.3V output end of the power supply circuit, and the second end of the fifteenth capacitor C15 is grounded. The digital power supply VDD terminal of the environmental sensor U6 is connected to the first terminal of the sixteenth capacitor C16 and the 3.3V output terminal of the power supply circuit, and the second terminal of the sixteenth capacitor C16 is grounded. The No. 1 pin and the No. 7 pin of the environment sensor U6 are connected with the GND of the power supply circuit.
Specifically, the environmental sensor U6 may detect environmental parameters such as the ambient temperature and the ambient humidity, and send it to the control circuit 30 to save the environmental parameters such as the ambient temperature and the ambient humidity.
In an embodiment, please refer to fig. 9, fig. 9 is a schematic block diagram illustrating a structure of an implementation of a fluorescence detection apparatus 1000 according to an embodiment of the present application.
As shown in fig. 9, the fluorescence detection apparatus 1000 includes a fluorescence detection circuit 100.
The fluorescence detection circuit 100 may be configured with reference to the examples of fig. 1 to 8, for example, the fluorescence detection apparatus 1000 includes the photosensitive device 10, the photoelectric conversion circuit 20 and the control circuit 30 described in the foregoing embodiments, and a specific configuration manner of the fluorescence detection circuit 100 may be referred to the corresponding embodiments described in the present specification, which are not described herein again.
Referring to fig. 10, fig. 10 is a schematic block diagram illustrating a flow chart of steps of a fluorescence detection method according to an embodiment of the present application, and specifically, the fluorescence detection method is applied to the fluorescence detection circuit 100 or the fluorescence detection apparatus 1000 as described above.
S101, controlling a photoelectric conversion circuit to gate a preset resistance feedback path, and acquiring a voltage value and a photoelectric current value corresponding to the preset resistance feedback path.
The preset resistance feedback path may be a resistance feedback path corresponding to the minimum resistance value.
Specifically, the photosensitive device 10 detects a photocurrent corresponding to fluorescence emitted from the substance to be detected, and the photoelectric conversion circuit 20 determines a voltage value corresponding to a resistance feedback path corresponding to a minimum resistance value of the photocurrent and the previously-selected resistance value according to the photocurrent.
In some embodiments, before the controlling the photoelectric conversion circuit 20 to gate a preset resistance feedback path, obtaining a resistance value of the thermistor 60, and determining a temperature of the substrate according to the resistance value of the thermistor 60; if the temperature of the substrate exceeds the preset temperature threshold, the preset power of the light emitting device 40 is adjusted, and the driving circuit 50 is controlled to drive the light emitting device 40 to emit ultraviolet rays at the adjusted preset power.
Specifically, the light emitting device 40 is controlled to emit ultraviolet light with a preset power, at this time, the resistance of the thermistor 60 is obtained, the temperature of the substrate is determined according to the resistance of the thermistor 60, if the temperature of the substrate exceeds a preset temperature threshold, the driving circuit 50 is controlled to reduce the power, and the light emitting device 40 is driven to emit ultraviolet light with the reduced power until the temperature of the substrate does not exceed the preset temperature threshold.
For example, if the preset temperature threshold is 60 °, the light emitting device 40 is controlled to emit ultraviolet light with the highest power, at this time, the resistance of the thermistor 60 is obtained, the temperature of the substrate is determined according to the resistance of the thermistor 60, if the temperature of the substrate exceeds 60 °, the driving circuit 50 is controlled to reduce the power, and the light emitting device 40 is driven to emit ultraviolet light with the reduced power until the temperature of the substrate does not exceed the preset temperature threshold, and the reduced power is used as the preset power.
S102, determining a target resistance feedback path from a plurality of resistance feedback paths according to the voltage value and the photoelectric current value.
The output end of the first multiplexer U4 is connected with the second end of the second amplifier U3 to form a plurality of resistor feedback paths, where the target resistor feedback paths are resistor feedback paths corresponding to the calculated voltage value in the optimal voltage range.
In some embodiments, determining whether a voltage value corresponding to the preset resistive feedback path is less than a first voltage value threshold; and if the voltage value is smaller than the first voltage value threshold, determining a target resistance feedback path according to the resistance value corresponding to each resistance feedback path and the photoelectric value.
Specifically, determining whether a voltage value corresponding to the preset resistance feedback path is smaller than a first voltage value threshold value; if the voltage value is not less than the first voltage value threshold, controlling the photoelectric conversion circuit 20 to gate a resistance feedback path corresponding to a larger resistance value, and taking the path as a target resistance feedback path; if the voltage value is smaller than the first voltage value threshold, the photoelectric conversion circuit 20 is controlled to gate the resistor feedback path corresponding to the larger resistor value until the voltage value of the corresponding path is larger than the first voltage value threshold, and the path is used as the target resistor feedback path.
For example, if the first voltage value threshold is 1V, determining whether the voltage value corresponding to the resistance feedback path a is less than 1V, and if the voltage value corresponding to the resistance feedback path a is not less than 1V, taking the resistance feedback path a as the target resistance feedback path; if the voltage value is smaller than the first voltage value threshold, the photoelectric conversion circuit 20 is controlled to gate the resistive feedback path (for example, the resistive feedback path b) corresponding to the larger resistance value until the voltage value of the corresponding path is greater than 1V, for example, the voltage value of the corresponding path of the resistive feedback path c is greater than 1V, and the resistive feedback path c is used as the target resistive feedback path.
In some embodiments, after determining a target resistive feedback path from a plurality of resistive feedback paths according to a voltage value and the photo-current value, determining whether a voltage value corresponding to the target resistive feedback path is greater than a second voltage value threshold; if the voltage value corresponding to the target resistor feedback path is greater than the second voltage value threshold, determining the target power of the light emitting device 40 according to the voltage value, and controlling the driving circuit 50 to drive the light emitting device 40 to emit ultraviolet rays with the target power.
Specifically, the photoelectric conversion circuit 20 is controlled to gate the target resistor feedback path, obtain a voltage value corresponding to the target resistor feedback path, and determine whether the voltage value corresponding to the target resistor feedback path is greater than a second voltage value threshold; if the voltage value is not greater than the second voltage value threshold, taking the preset power as the target power; if the voltage value is greater than the second voltage value threshold, the driving circuit 50 is controlled to drive the light emitting device 40 to reduce the power until the voltage value of the corresponding power is less than the second voltage value threshold, and the power is taken as the target power, so that fluorescence emitted by the substance to be detected can be accurately detected, and the user experience is improved.
For example, if the second voltage value threshold is 3V and the preset power is 3W, determining whether the voltage value corresponding to the target resistor feedback path is greater than 3V; if the voltage value is not greater than 3V, taking the preset power as the target power, namely 3W; if the voltage value is greater than 3V at this time, the driving circuit 50 is controlled to drive the light emitting device 40 to reduce the power until the voltage value of the corresponding power is less than 3V, for example, when the power is 2W, the corresponding voltage value is less than 3V, and 2W is taken as the target power.
S103, controlling the photoelectric conversion circuit to gate the target resistance feedback path so as to detect fluorescence emitted by the substance to be detected through the target resistance feedback path.
Specifically, the driving circuit 50 is controlled to drive the light emitting device 40 to emit ultraviolet light at a target power to irradiate the substance to be measured, so that the photosensitive device 10 detects a photocurrent corresponding to fluorescence emitted from the substance to be measured, and the photoelectric conversion circuit 20 is controlled to gate a target resistance feedback path to detect the fluorescence emitted from the substance to be measured through the target resistance feedback path. Therefore, fluorescence emitted by the substance to be detected can be accurately detected, and user experience is improved.
In the description of the present application, it should be noted that, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected. Either mechanically or electrically. Can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.
In this application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, and may also include the first and second features not being in direct contact but being in contact with each other by way of additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
The above disclosure provides many different embodiments or examples for implementing different structures of the present application. The components and arrangements of specific examples are described above in order to simplify the disclosure of this application. Of course, they are merely examples and are not intended to limit the present application. Furthermore, the present application may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not in themselves indicate the relationship between the various embodiments and/or arrangements discussed. In addition, the present application provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize the application of other processes and/or the use of other materials.
In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The above embodiments are only preferred embodiments of the present application, and the scope of the present application is not limited thereto, but any insubstantial changes and substitutions made by those skilled in the art on the basis of the present application are intended to be within the scope of the present application.

Claims (13)

1. A fluorescence detection circuit, the fluorescence detection circuit comprising:
the photosensitive device is used for detecting photocurrent corresponding to fluorescence emitted by the substance to be detected;
the photoelectric conversion circuit is connected with the photosensitive device and comprises a plurality of resistance feedback paths, and the photoelectric conversion circuit is used for determining a voltage value according to the photocurrent and the gated resistance feedback paths;
the control circuit is connected with the photoelectric conversion circuit and is used for determining a target resistance feedback path from a plurality of resistance feedback paths according to the voltage value and controlling the photoelectric conversion circuit to gate the target resistance feedback path so as to detect fluorescence emitted by the substance to be detected through the target resistance feedback path.
2. The fluorescence detection circuit of claim 1, wherein the fluorescence detection circuit further comprises:
The light-emitting device is arranged on the substrate and is used for emitting ultraviolet rays to irradiate the substance to be detected so as to enable the substance to be detected to emit fluorescence;
the driving circuit is connected with the light-emitting device and the control circuit and is used for driving the light-emitting device to emit ultraviolet rays at preset power;
the control circuit is also used for determining target power according to the voltage value and controlling the driving circuit to drive the light-emitting device to emit ultraviolet rays at the target power.
3. The fluorescence detection circuit of claim 2, wherein the drive circuit comprises:
the input end of the driver is connected with the control circuit, the output of the driver is connected with the light-emitting device, and the driver is used for controlling the light-emitting device to emit ultraviolet rays according to the light-emitting instruction emitted by the control circuit.
4. The fluorescence detection circuit of claim 2, wherein the fluorescence detection circuit further comprises:
a thermistor disposed on the substrate;
the temperature detection circuit is connected with the thermistor and the control circuit and is used for acquiring the resistance value of the thermistor;
The control circuit is also used for determining the temperature of the substrate according to the resistance value of the thermistor, adjusting the preset power according to the temperature of the substrate and controlling the driving circuit to drive the light-emitting device to emit ultraviolet rays with the adjusted preset power.
5. The fluorescence detection circuit of claim 4, wherein the temperature detection circuit comprises:
the first pin of the first interface is connected with the first end of the thermistor, the second pin of the first interface is connected with the first end of the thermistor and the control circuit, the third pin of the first interface is connected with the second end of the thermistor and the control circuit, and the fourth pin of the first interface is connected with the second end of the thermistor;
the first input end of the first amplifier is grounded, the second input end of the first amplifier is connected with the fourth pin of the first interface, and the output end of the first amplifier is connected with the first pin of the first interface.
6. The fluorescence detection circuit of claim 1, wherein the photoelectric conversion circuit comprises:
The first input end of the second amplifier is grounded, and the second input end of the second amplifier is connected with the photosensitive device;
the input end of the first multiplexer is connected with the output end of the second amplifier, the output end of the first multiplexer is connected with the control circuit, and the output end of the first multiplexer is also connected with the second end of the second amplifier to form a plurality of resistor feedback paths.
7. The fluorescence detection circuit of claim 6, wherein the resistive feedback path comprises:
a first end of the resistor element is connected with a second end of the second amplifier, and a second end of the resistor element is connected with an output end of the first multiplexer;
and a capacitance element connected in parallel with the resistance element.
8. The fluorescence detection circuit of any one of claims 1-7, wherein the light-sensing device is a photodiode.
9. A fluorescence detection method, wherein the fluorescence detection circuit according to any one of claims 1 to 8 is applied, the method comprising:
controlling a photoelectric conversion circuit to gate a preset resistance feedback path, and acquiring a voltage value and a photoelectric current value corresponding to the preset resistance feedback path;
Determining a target resistance feedback path from a plurality of resistance feedback paths according to the voltage value and the photoelectric current value;
and controlling the photoelectric conversion circuit to gate the target resistance feedback path so as to detect fluorescence emitted by the substance to be detected through the target resistance feedback path.
10. The fluorescence detection method of claim 9, wherein said determining a target resistive feedback path from a plurality of resistive feedback paths based on said voltage value and said photo current value comprises:
determining whether the voltage value is less than a first voltage value threshold;
and if the voltage value is smaller than the first voltage value threshold, determining a target resistance feedback path according to the resistance value corresponding to each resistance feedback path and the photoelectric value.
11. The fluorescence detection method of claim 9, further comprising, after said determining a target resistive feedback path from a plurality of resistive feedback paths based on said voltage value and said photo-current value:
determining whether a voltage value corresponding to the target resistor feedback path is greater than a second voltage value threshold;
and if the voltage value corresponding to the target resistor feedback path is larger than a second voltage value threshold, determining the target power of the light-emitting device according to the voltage value, and controlling a driving circuit to drive the light-emitting device to emit ultraviolet rays with the target power.
12. The fluorescence detection method of claim 9, wherein prior to said controlling the photoelectric conversion circuit to gate a preset resistive feedback path, comprising:
acquiring the resistance of a thermistor, and determining the temperature of the substrate according to the resistance of the thermistor;
if the temperature of the substrate exceeds the preset temperature threshold, adjusting the preset power of the light emitting device, and controlling the driving circuit to drive the light emitting device to emit ultraviolet rays at the adjusted preset power.
13. A fluorescence detection device comprising a fluorescence detection circuit according to any one of claims 1-8.
CN202310149923.2A 2023-02-09 2023-02-09 Fluorescence detection circuit, fluorescence detection device and fluorescence detection method Pending CN116256345A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310149923.2A CN116256345A (en) 2023-02-09 2023-02-09 Fluorescence detection circuit, fluorescence detection device and fluorescence detection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310149923.2A CN116256345A (en) 2023-02-09 2023-02-09 Fluorescence detection circuit, fluorescence detection device and fluorescence detection method

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