CN116230713A - Power device with temperature detection function - Google Patents
Power device with temperature detection function Download PDFInfo
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- CN116230713A CN116230713A CN202211720645.3A CN202211720645A CN116230713A CN 116230713 A CN116230713 A CN 116230713A CN 202211720645 A CN202211720645 A CN 202211720645A CN 116230713 A CN116230713 A CN 116230713A
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- 238000001514 detection method Methods 0.000 title claims abstract description 20
- 238000004806 packaging method and process Methods 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 7
- 238000012544 monitoring process Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000005669 field effect Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 3
- 238000012545 processing Methods 0.000 abstract description 3
- 238000013461 design Methods 0.000 abstract description 2
- 238000005070 sampling Methods 0.000 abstract description 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Conversion In General (AREA)
Abstract
The invention discloses a power device with temperature detection, which is applied to the design of devices with temperature detection of power devices such as IGBT (insulated gate bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor), mainly comprising integrating a resistor or diode structure in power chips such as IGBT and MOSFET, and detecting the temperature of the chips in real time by utilizing the linear relation between the resistor or diode and the temperature. The package is also based on the original package, two pins are added, signals are led out to a control board, and the working temperature of the chip is monitored in real time. The advantages of the application brought by the method are as follows: the monitoring temperature is real-time and accurate; by adopting the structure of integrating the resistor or the diode in the chip, the process is simpler, and the material management and packaging difficulty of packaging or PCB processing is greatly simplified. The temperature sampling function is added on the single-tube chip, so that the temperature monitoring of the single tube of the power device can be completed in real time and efficiently at low cost, and the working stability of the system is ensured.
Description
Technical Field
The invention belongs to the field of integrated circuits, and mainly aims at improving the packaging of a power device, in particular to a power device with temperature detection.
Background
The power device mainly comprises two grid-control devices of MOSFET and IGBT, and power devices of triode, thyristor, diode, etc., wherein:
MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), a field-effect transistor (field-effect transistor) is widely used in analog circuits and digital circuits. MOSFETs can be classified into two types, N-type and P-type, according to their "channel" (the polarity of the operating carrier). Because the driving circuit is simple, the switching speed is high, the device is widely applied in the industrial field and belongs to a device operated by single carrier
IGBT (Insulated Gate Bipolar Transistor) the insulated gate bipolar transistor is a composite fully-controlled voltage-driven power semiconductor device composed of a BJT (bipolar transistor) and a MOS (insulated gate field effect transistor), and has the advantages of high input impedance and low conduction voltage drop of a MOSFET. The saturation voltage is reduced, the current density is high, but the driving current is high; the MOSFET has small driving power, high switching speed, large conduction voltage drop and small current density. The IGBT combines the advantages of the two devices, and has small driving power and reduced saturation voltage. Therefore, the application of the semiconductor device is also becoming wider and wider, and the semiconductor device is an important power semiconductor device.
IGBTs are dual carrier operated devices in which two different current topologies can temporarily occur: one electron current (MOSFET current) and the other hole current (bipolar). When a negative bias is applied to the gate or the gate is below a threshold, the channel is disabled and no holes are injected into the N-region.
The power device is a core device in power electronic conversion, is widely used for various power supplies and power converters, and can cause temperature rise change due to the loss of a chip in operation. If the temperature rise is too high, damage to the device can occur, resulting in failure of the entire system.
In the prior art, a single tube is fixed on a radiator, a chip to be detected has no temperature detection function, and the temperature of the single tube is detected mainly by means of NTC resistors packaged on the pins or external resistors on a PCB. This presents three problems: the temperature sensor has the advantages that firstly, the packaging of the resistor is increased except for a working chip, the packaging complexity is improved, and secondly, a certain distance exists between the chip and the temperature-sensitive resistor, so that a certain thermal resistance exists, a certain temperature difference can be caused, and the temperature of the chip is not monitored timely; and thirdly, when a plurality of single tubes are connected in parallel, certain difference exists in current among different single tubes, and at the moment, the temperature-sensitive resistor arranged on the PCB can only monitor one integral temperature rise and cannot effectively respond to the temperature rise change of a single device. Because of the parallel connection of the single pipes, one single pipe fails, and the whole system fails.
Disclosure of Invention
The invention aims to provide a power device with temperature detection, so that the chip temperature of the power device can be monitored in real time.
The invention aims at realizing the following scheme: a power device with temperature detection is applied to a power device with temperature detection comprising IGBT and MOSFET, a resistor or diode structure is integrated in a power chip, and the temperature of the chip is detected in real time by utilizing the linear relation between the resistor or diode and the temperature.
The invention discloses a device design with temperature detection for power devices such as IGBT and MOSFET, which is mainly characterized in that a resistor or diode structure is integrated in power chips such as IGBT and MOSFET, and the temperature of the chips is detected in real time by utilizing the linear relation between the resistor or diode and the temperature.
The package is also based on the original package, two pins are added, signals are led out to a control board, and the working temperature of the chip is monitored in real time.
Comparison of the chip structure of the present invention with the chip structure of the prior art. It can be seen that the temperature testing device of the present invention is integrated in a chip, whereas the devices for temperature detection in the prior art are externally applied. There are two additional modes, one is directly welded on the surface of the chip to be detected, and the other is to weld the thermistor on the pin of the single tube. Both of these methods have defects, in the first case, if the thermistor is welded on the surface of the chip to be tested, the wire bonding on the surface of the chip is affected, sometimes even the heat dissipation of the chip is affected, in the second case, there is a distance between the thermistor and the chip, the temperature to be tested is a certain difference from the actual temperature of the chip, and the test has a certain time delay.
In addition, by adopting the structure of integrating the resistor or the diode in the chip, the technology is simpler, and the material management and packaging difficulty of packaging or PCB processing are greatly simplified.
After the invention is adopted, the real-time temperature detection can be carried out on the single chip of the power device, so that the working process of the power device can be accurately protected.
Further, in the case of single-tube packages, the conventional working electrodes are three, GCE, distributed over three pins of the conventional package (G, C, E three electrodes). As shown in fig. one, a conventional power device package is shown.
1,2 in the figure correspond to the E pole and G pole on the chip, respectively. In the case of a MOSFET, the three electrodes are G, D, S, respectively, where 1,2 correspond to the S and G poles on the chip, respectively, as shown in fig. 2.
The invention is that two pins are led out outside the pins of the three electrodes, and the two pins are connected to a temperature detection unit in the chip, and the structure is positioned at the center of the chip, because the position is the part with the highest temperature of the chip. The structure generally adopts a diode structure or a polysilicon resistor structure, has better compatibility with a device process, has excellent temperature characteristics, and is fitted with a curve of temperature and voltage for monitoring the real-time temperature of a chip. As shown in the graph of figure two. Compared with the traditional NTC or external resistor, the temperature detection precision can be improved by 5-10 times.
The invention has the function of increasing temperature sampling on the single-tube chip, can complete the temperature monitoring of the single tube of the power device in real time and high efficiency with low cost, and ensures the stability of the system operation.
Drawings
FIG. 1 is a comparison of the chip structure of the present invention with the prior art;
FIG. 2 shows the temperature sensing effect of the present invention in comparison to the prior art;
FIG. 3 is a schematic diagram of an IGBT single tube power device package with temperature sensing;
fig. 4 is a schematic diagram of a MOSFET power device package with temperature sensing.
Detailed Description
Example 1
A power device with temperature sensing as shown in fig. 3. In the IGBT power chip, a temperature sensitive resistor or diode structure is integrated, and the temperature of the chip is detected in real time by utilizing the linear relation between the resistor or diode and the temperature.
In this embodiment, as shown in fig. 3, a diode or a temperature sensitive resistor is added in a single tube of the IGBT, and the diode or the temperature sensitive resistor is packaged in the tube as a temperature measuring element, and two pins T1 and T2 of the diode or the temperature sensitive resistor are added, and led out together with three electrode pins G, C and E of the IGBT, and are connected to a control circuit through the two pins.
The G, C and E (or MOSFET, G, D and S are corresponding) electrodes of the conventional IGBT are provided with three pins for electrode control and energy transmission, and two pins of the newly added T1 and T2 are connected to the added temperature-sensitive resistor or diode for leading out the diode electric signal for monitoring the temperature of the chip in real time from the surface of the chip, and then are connected to a control circuit through the two pins. Therefore, the chip temperature of each power device single tube is monitored in real time on the control circuit, the failure risk is avoided timely, and the safety of the circuit is guaranteed.
Example 2
A power device with temperature sensing as shown in fig. 4. In the MOSFET power chip, a temperature sensitive resistor or diode structure is integrated, and the temperature of the chip is detected in real time by utilizing the linear relation between the resistor or diode and the temperature.
In this embodiment, as shown in fig. 4, in the power chip of the MOSFET, a temperature sensing resistor or a diode of the temperature sensing element is integrated and packaged in a tube, and when packaging, except G, D, S are three electrode pins of a conventional MOSFET, two pins T1, T2 of the temperature sensing element are added, and are connected to a control circuit through the two pins.
G, D, S are three electrode pins of a conventional MOSFET for electrode control and energy transmission, and two pins of T1 and T2 are newly added for leading out diode electric signals for monitoring the temperature of the chip in real time from the surface of the chip and then are connected to a control circuit through the two pins.
Therefore, the chip temperature of each power device single tube is monitored in real time on the control circuit, the failure risk is avoided timely, and the safety of the circuit is guaranteed.
As shown in FIG. 1, it can be seen that the temperature-sensitive resistor is integrated in a chip, the process is simple, and the temperature detection effect is relatively good. As can be seen from fig. 2, the temperature detection effect in the present invention is improved compared with the prior art.
The invention brings the advantages of application: in the prior art, a single tube is fixed on a radiator, a chip to be detected has no temperature detection function, and for the detection of the temperature of the single tube, the single tube is mainly monitored by means of NTC resistors packaged on the pins or resistors externally arranged on a PCB. This presents three problems: the temperature sensor has the advantages that firstly, the packaging of the resistor is increased except for a working chip, the packaging complexity is improved, and secondly, a certain distance exists between the chip and the temperature-sensitive resistor, so that a certain thermal resistance exists, a certain temperature difference can be caused, and the temperature of the chip is not monitored timely; and thirdly, when a plurality of single tubes are connected in parallel, certain difference exists in current among different single tubes, and at the moment, the temperature-sensitive resistor arranged on the PCB can only monitor one integral temperature rise and cannot effectively respond to the temperature rise change of a single device. Because of the parallel connection of the single pipes, one single pipe fails, and the whole system fails. In addition, the integrated resistor or diode structure is adopted in the chip, the process is simpler, and the material management and packaging difficulty of packaging or PCB processing is greatly simplified.
Claims (4)
1. The utility model provides a power device with temperature detects, is applied to the power device including IGBT, MOSFET, its characterized in that: in the power chip, a resistor or diode structure is integrated, and the temperature of the chip is detected in real time by utilizing the linear relation between the resistor or diode and the temperature.
2. The power device with temperature sensing of claim 1, wherein: the package is also based on the original package, two pins are added, and signals are led out to the control board.
3. A power device with temperature detection according to claim 1 or 2, characterized in that: a diode or a temperature-sensitive resistor is added in a single tube of the IGBT and is used as a temperature measuring element to be packaged in the tube, two pins T1 and T2 of the diode or the temperature-sensitive resistor are added, the two pins are led out together with three electrode pins G, C and E of the IGBT, and the three electrode pins are connected to a control circuit through the two pins.
4. A power device with temperature detection according to claim 1 or 2, characterized in that: in the power chip of the MOSFET, a temperature sensing resistor or a diode of a temperature measuring element is integrated and packaged in a tube, and when the temperature sensing resistor or the diode is packaged, besides G, D and S, three electrode pins of a conventional MOSFET are adopted, two pins T1 and T2 of the temperature measuring element are added, and the temperature sensing resistor or the diode is connected to a control circuit through the two pins.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211720645.3A CN116230713A (en) | 2022-12-30 | 2022-12-30 | Power device with temperature detection function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211720645.3A CN116230713A (en) | 2022-12-30 | 2022-12-30 | Power device with temperature detection function |
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| Publication Number | Publication Date |
|---|---|
| CN116230713A true CN116230713A (en) | 2023-06-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211720645.3A Pending CN116230713A (en) | 2022-12-30 | 2022-12-30 | Power device with temperature detection function |
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| CN (1) | CN116230713A (en) |
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2022
- 2022-12-30 CN CN202211720645.3A patent/CN116230713A/en active Pending
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