CN116230585A

CN116230585A - Bottom surface cleaning device

Info

Publication number: CN116230585A
Application number: CN202211570591.7A
Authority: CN
Inventors: 许刚; 刘远航; 杨晓良; 马旭
Original assignee: Huahaiqingke Co Ltd
Current assignee: Huahaiqingke Co Ltd
Priority date: 2022-12-08
Filing date: 2022-12-08
Publication date: 2023-06-06

Abstract

The invention discloses a bottom surface cleaning device which is arranged on a base of wafer thinning equipment, wherein the wafer thinning equipment comprises a workbench and a grinding manipulator which are used in the process of grinding a wafer, and the bottom surface cleaning device is used for cleaning the bottom surface of the wafer after grinding and/or the bottom surface of the grinding manipulator, is positioned beside the workbench and is positioned on the moving track of the grinding manipulator; the bottom surface cleaning device comprises a spray piece for spraying liquid or gas upwards and is used for cleaning and/or drying the bottom surface of the wafer and/or the grinding manipulator in a non-contact mode.

Description

Bottom surface cleaning device

Technical Field

The invention relates to the technical field of semiconductor wafer processing, in particular to a bottom surface cleaning device.

Background

The semiconductor industry currently manufactures semiconductor chips by forming electronic circuits such as ICs (Integrated Circuit, integrated circuits) and LSIs (Large Scale Integration, large scale integrated circuits) on the surface of a semiconductor wafer. The back surface of the wafer, which is the opposite surface of the device surface on which the electronic circuits are formed, is ground by a grinding and thinning processing device, also referred to as a substrate, before the wafer is divided into semiconductor chips. Thinning (thinning) of the back surface of the wafer refers to Grinding various materials such as silicon wafers or compound semiconductors before packaging with high precision to reduce the thickness to a suitable ultra-thin form.

The thickness of the thinned removed wafer is about 700 μm or more, and a large amount of large-sized contaminants such as large particles are generated during the grinding due to the large amount of removed thickness, and after the total thickness of the wafer is thinned to a certain extent, for example, 7 μm or less, the edge of the wafer is peeled off a small amount to generate slag. Along with the long-term operation of equipment, the large-size pollutant that carries at the wafer bottom behind the grinding process can be accumulated constantly at the surface of transmission unit, and as the material loading position of grinding process simultaneously, the pollutant can be transmitted back to the grinding station, and then influences the homogeneity, the uniformity of grinding surface.

Disclosure of Invention

The embodiment of the invention provides a bottom surface cleaning device, which aims at solving at least one of the technical problems existing in the prior art.

The embodiment of the invention provides a bottom surface cleaning device which is arranged on a base of wafer thinning equipment, wherein the wafer thinning equipment comprises a workbench and a grinding manipulator which are used in the process of grinding a wafer, and the bottom surface cleaning device is used for cleaning the bottom surface of the wafer after grinding and/or the bottom surface of the grinding manipulator, is positioned beside the workbench and is positioned on the moving track of the grinding manipulator; the bottom surface cleaning device comprises a spray piece for spraying liquid or gas upwards and is used for cleaning and/or drying the bottom surface of the wafer and/or the grinding manipulator in a non-contact mode.

In one embodiment, the bottom surface cleaning device further comprises a swing arm, a support and a driving mechanism, wherein the swing arm is positioned above the support, the free end of the swing arm is fixedly provided with a spraying piece, and the positioning end of the swing arm is rotatably connected with the driving mechanism, so that the driving mechanism controls the swing arm to drive the spraying piece to swing horizontally.

In one embodiment, the floor cleaning unit further includes an open-top housing within which the spray member moves.

In one embodiment, the bottom surface cleaning device further comprises a photoelectric sensor for limiting the swing angle of the swing arm, wherein the photoelectric sensor is arranged at the top end of the support and is close to the positioning end of the swing arm.

In one embodiment, the bottom surface cleaning apparatus further comprises a brush assembly for cleaning the bottom surface of the wafer and/or the grinding robot.

In one embodiment, the brushing assembly includes a first brushing assembly, a second brushing assembly, and a polishing assembly.

In one embodiment, the first brushing assembly includes a first brushing element and a first support element.

In one embodiment, the second brushing assembly includes a second brushing element and a second driving element.

In one embodiment, the polishing assembly includes a polishing member and a third drive member.

In one embodiment, the grinding robot is a suction cup type robot.

The beneficial effects of the embodiment of the invention include: the bottom surface of the wafer is cleaned after grinding, and the bottom surface of the wafer is cleaned when the grinding manipulator is not provided with a piece, so that the cleaning effect is good.

Drawings

The advantages of the present invention will become more apparent and more readily appreciated from the detailed description given in conjunction with the following drawings, which are meant to be illustrative only and not limiting of the scope of the invention, wherein:

fig. 1 shows a wafer thinning apparatus provided in embodiment 1 of the present invention;

fig. 2 to 5 show a floor cleaning apparatus provided in embodiment 1;

fig. 6 shows a wafer thinning apparatus provided in embodiment 2 of the present invention;

fig. 7 to 10 show a floor cleaning device provided in embodiment 2.

Detailed Description

The following describes the technical scheme of the present invention in detail with reference to specific embodiments and drawings thereof. The examples described herein are specific embodiments of the present invention for illustrating the concept of the present invention; the description is intended to be illustrative and exemplary in nature and should not be construed as limiting the scope of the invention in its aspects. It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other. In addition to the embodiments described herein, those skilled in the art can adopt other obvious solutions based on the disclosure of the claims of the present application and the specification thereof, including those adopting any obvious substitutions and modifications to the embodiments described herein. It should be understood that the following description of the embodiments of the present invention, unless specifically stated otherwise, is established in the natural state of the relevant devices, apparatuses, components, etc. in which no external control signal or driving force is given, in order to facilitate understanding.

Furthermore, it is noted that terms such as front, back, upper, lower, left, right, top, bottom, front, back, horizontal, vertical, and the like used herein are merely used for ease of description to aid in understanding the relative position or orientation and are not intended to limit the orientation of any apparatus or structure.

In order to describe the technical solution according to the invention, reference will be made to the accompanying drawings and examples.

In this application, a wafer (wafer) is also referred to as a die, a silicon wafer, a substrate, or a substrate (substrate), etc., and its meaning and actual function are equivalent.

The wafer thinning equipment provided by the embodiment of the disclosure is mainly applied to thinning the back surface of a wafer, wherein the back surface refers to the surface of the wafer, on which devices are not laid, and is generally a substrate, and the substrate material can be silicon, silicon oxide, silicon nitride, silicon carbide, sapphire and the like.

Fig. 1 shows a wafer thinning apparatus according to an embodiment of the present invention, including:

the equipment front end module 1 is used for realizing the in-out of the wafer, and the equipment front end module 1 is arranged at the front end of the wafer thinning equipment. The front end module 1 is a transition module for transferring wafers from outside to inside of the equipment platform, and is used for realizing wafer in-and-out so as to realize 'dry in-and-dry out' of the wafers.

The grinding module 3 is used for grinding the wafer, the grinding comprises rough grinding and finish grinding, and the grinding module 3 is arranged at the tail end of the wafer thinning equipment;

and a polishing module 2 for performing chemical mechanical polishing on the wafer after the completion of the grinding, and having a function of transferring the wafer between the three modules (the equipment front-end module 1, the grinding module 3 and the polishing module 2), the polishing module 2 being disposed between the equipment front-end module 1 and the grinding module 3.

It will be appreciated that the wafer thinning apparatus shown in fig. 1 is only an example, and that the polishing module 2 may be omitted in other implementations, leaving only the apparatus front end module 1 and the grinding module 3, and that the grinding module 3 may include multiple grinding passes, such as 3 passes, 4 passes, 5 passes, etc. Embodiments like these modifications should fall within the scope of the present application as long as the thinning function of the wafer can be achieved.

Device front end module 1:

the equipment front-end module 1 comprises a wafer storage unit and a first transmission unit. The wafer storage unit is arranged at one side of the front end of the wafer thinning device, and the first transmission unit is arranged between the wafer storage unit and the polishing module 2 and is used for realizing the transmission of the wafer between the wafer storage unit and the polishing module 2.

The wafer storage unit is composed of a plurality of front opening unified pods (Front Opening Unified Pod, FOUPs), specifically two, three, etc.

The first transmission unit comprises a pick-and-place slice manipulator. The picking and placing manipulator can rotate, stretch or fold and shrink and can also move along the conveying track. The wafer taking and placing manipulator can take out wafers to be processed from the wafer storage unit through the door structure of the wafer conveying box and send the wafers to the polishing module 2, and can also receive the processed wafers from the polishing module 2 and place the wafers into the wafer conveying box.

Polishing module 2:

the polishing module 2 includes a second transfer unit 21, a third transfer unit 22, a chemical mechanical polishing unit 23, and a post-processing unit 24. The second transfer unit 21, the chemical mechanical polishing unit 23 and the post-processing unit 24 occupy respective edges of the polishing module 2, and the third transfer unit 22 is located at the center.

Specifically, the second transmission units 21 are located at the edge side in the polishing module 2 and distributed along the machine length direction, and can communicate the machine front end module 1 and the grinding module 3. The chemical mechanical polishing unit 23 is located at the other side edge of the polishing module 2 and adjacent to the grinding module 3 and the second transfer unit 21, respectively. The post-processing unit 24 is located at the edge of the polishing module 2 at the other side and adjacent to the equipment front-end module 1, the second transfer unit 21, and the chemical mechanical polishing unit 23, respectively. The third transfer unit 22 is surrounded by the second transfer unit 21, the chemical mechanical polishing unit 23, and the post-processing unit 24 near the center of the polishing module 2, for accomplishing the mutual transfer of the wafers among the second transfer unit 21, the chemical mechanical polishing unit 23, and the post-processing unit 24.

In one embodiment, the second transfer unit 21 includes a temporary storage section and a moving buffer section for temporarily storing and shipping wafers. The temporary storage part is arranged at a position close to the front end module 1 of the equipment and is used for temporarily storing or transferring the wafer. The movement buffer part is arranged along the direction from the equipment front end module 1 to the grinding module 3 and can move bidirectionally.

In one embodiment, the third transfer unit 22 includes a central robot for transferring the ground wafer from the mobile buffer to the chemical mechanical polishing unit 23, transferring the polished wafer from the chemical mechanical polishing unit 23 to the post-processing unit 24, and transferring the cleaned wafer from the post-processing unit 24 to the temporary storage.

The wafer is taken out from the front end module 1 of the equipment and then conveyed to the grinding module 3 for grinding through the second transmission unit 21; after finishing grinding in the grinding module 3, the wafer is conveyed to a chemical mechanical polishing unit 23 for polishing through a second conveying unit 21 and a third conveying unit 22; after polishing and cleaning, the wafer is transferred back to the equipment front-end module 1 via the third transfer unit 22 and the second transfer unit 21.

The post-processing unit 24 is used to clean and dry the polished wafer, and may include a horizontal brushing device and a single chamber cleaning device.

Grinding module 3:

the grinding module 3 includes a grinding unit 31, a cleaning unit 32, and a fourth transfer unit 33.

The grinding unit 31 is used to achieve wafer grinding and thickness measurement. As shown in fig. 1, the grinding unit 31 includes a base 311, a table 312 mounted on the base, a suction cup 313 provided on the table, and a grinding wheel corresponding to the position of the suction cup. The workbench is used for bearing the wafer and can rotate around the vertical central axis of the workbench. In one embodiment, as shown in FIG. 1, the suction cups are provided in three ways to rotate between the rough grinding station, the fine grinding station, and the handling station 314. The two grinding wheels respectively realize rough grinding and finish grinding. It will be appreciated that fig. 1 is only an example, and that the number of suction cups, grinding wheels may be other values, such as 1, 2, 4, 5, 6, etc. and the number of grinding wheels 1, 3, 4, etc.

The cleaning unit 32 is used to perform chuck cleaning, polishing, and wafer cleaning.

The fourth transfer unit 33 includes a grinding robot 331 for transferring the wafer, and the grinding robot 331 refers to a robot used in the grinding module 3 for transferring the wafer between the grinding unit 31 and the second transfer unit 21, specifically, for transferring the wafer between the chuck and the movable buffer portion corresponding to the loading and unloading station. The grinding manipulator 331 takes the wafer from the moving buffer portion of the second transfer unit 21 and sends the wafer to the grinding unit 31 for grinding, and after grinding and cleaning are completed, the grinding manipulator 331 takes the wafer from the grinding unit 31 and then places the wafer in the moving buffer portion for facilitating subsequent transfer of the wafer. The grinding manipulator 331 is internally provided with a pipeline capable of vacuumizing so as to realize vacuum adsorption of the wafer. Alternatively, the grinding robot 331 may be implemented by a claw-equipped mechanism. In this embodiment, the grinding robot 331 may also drive the wafer to rotate.

In addition, in the present invention, the grinding module 3 further includes a bottom surface cleaning device, and the bottom surface cleaning device can have various implementations, which are specifically described below:

example 1

Fig. 1 to 5 show a floor cleaning apparatus 50 provided in embodiment 1.

As shown in fig. 1, the bottom surface cleaning apparatus 50 is mounted on the base 311 of the grinding module 3, beside the table 312, and on the moving track of the grinding robot 331. The bottom surface cleaning apparatus 50 may be used to clean the bottom surface of the wafer after grinding during the transfer of the wafer with the grinding robot 331, and the bottom surface cleaning apparatus 50 may also be used to clean the bottom surface of the grinding robot 331.

As shown in fig. 3 to 5, in embodiment 1, the bottom surface cleaning apparatus 50 includes a shower member 51 for spraying liquid or gas upward for non-contact cleaning and/or drying of the bottom surface of the wafer and/or the grinding robot 331. As shown in fig. 3 and 4, in one embodiment, the bottom surface cleaning apparatus 50 further includes a swing arm 52, a support 53 and a driving mechanism 54, where the swing arm 52 is located above the support 53, a spraying member 51 is fixed at a free end of the swing arm 52, and a positioning end of the swing arm 52 is rotatably connected to the driving mechanism 54, so that the driving mechanism 54 controls the swing arm 52 to drive the spraying member 51 to swing horizontally.

Wherein, the bottom of support 53 is installed on the base 311 of grinding module 3, and the top of support 53 is equipped with swing arm 52, and support 53 is hollow structure, and the internally mounted of support 53 has actuating mechanism 54, and actuating mechanism 54 controls swing start-stop, range, speed, the motion modes such as angle of swing arm 52. The drive mechanism 54 may include a speed reducer and a servo motor coupled to the swing arm 52 via the speed reducer. The free end of the swing arm 52 is fixed with the spray piece 51, the spray piece 51 can swing back and forth along with the swing arm 52, the spray piece 51 sprays fluid upwards in the process of reciprocating movement, meanwhile, the grinding manipulator 331 rotates with the wafer or the grinding manipulator 331 rotates independently, and under the condition that the swing and the rotation are matched, the cleaning range of the spray piece 51 can cover the whole bottom surface of the wafer or the grinding manipulator 331.

In one embodiment, the spray member 51 is hinged with the swing arm 52, and the spray angle of the spray member 51 is adjustable. Further, the spray member 51 has an ultrasonic vibration part capable of spraying fluid with ultrasonic waves or megasonic waves to improve rinsing force and cleaning effect, and the spray member 51 may be an ultrasonic spray member or a megasonic spray member. The spray member 51 may be one or more nozzles or spray bars.

The shower 51 can spray the fluid upward to the bottom surface of the wafer or the bottom surface of the grinding robot 331 while swinging along with the swing arm 52. The oscillation path of the shower member 51 should cover at least the wafer radius area, but may cover the diameter area. The swing path of the shower member 51 may be between the edge of the wafer and the center of the wafer, or may be through the center of the wafer during the movement from one wafer edge to another. The grinding robot 331 moves the wafer to above the shower member 51 for cleaning, and the shower member 51 can rinse and dry the bottom surface of the wafer. In addition, when the grinding robot 331 does not transfer the wafer, the grinding robot 331 may be individually moved over the shower 51 to perform cleaning, and at this time, the shower 51 may rinse and dry the bottom surface of the grinding robot 331.

As shown in fig. 2-4, in one embodiment, the floor cleaning device 50 further includes an open-top housing 55, with the spray member 51 moving within the housing 55. The housing 55 serves to prevent liquid from splashing out of the cleaning process to other devices and to reduce liquid spillage.

The cover 55 is open-topped cylindric, and the one side that is close to swing arm 52 of cover 55 upper portion is equipped with the breach, and the breach provides the swing space of swing arm 52, and swing arm 52 stretches into in the cover 55 through this breach to swing arm 52 can not interfere with the terminal surface of breach in the swing process, and swing arm 52 can not collide with the cover 55 in the motion process promptly.

As shown in fig. 2, the size of the outer cover 55 completely covers the bottom surface of the wafer and the grinding manipulator 331, the top end of the outer cover 55 is arc-shaped, the radius of the arc is matched with the radius of the bottom surface of the grinding manipulator 331, specifically, the radius of the arc is equal to or slightly larger than the radius of the bottom surface of the grinding manipulator 331, and the radius of the arc can be equal to 1-1.2 times the radius of the bottom surface of the grinding manipulator 331. The top end of the housing 55 is lower than the bottom surface of the grinding robot 331 by 1 to 5mm. The grinding manipulator 331 stops when moving to just above the housing 55, and at this time, the cleaning process is performed, the spray member 51 swings inside the housing 55 to clean or dry the wafer or the bottom surface of the grinding manipulator 331, and the housing 55 can collect the liquid scattered during the cleaning process and avoid the liquid from scattering and polluting other devices. After the cleaning is completed, the grinding robot 331 is removed again. The grinding robot 331 does not need to move up and down when cleaning or passing through the housing 55, simplifying the operation steps and the mechanical structure.

In addition, a discharge port is provided at the bottom of the housing 55, and the discharge port is connected to a liquid discharging device to intensively discharge the contaminants such as gas, liquid, fixed particles, and the like collected by the housing 55.

As shown in fig. 5, in one embodiment, the floor cleaning device 50 further includes a photosensor 56 for limiting the swing angle of the swing arm 52. A photoelectric sensor 56 is mounted on the top end of the support 53 near the positioning end of the swing arm 52. Further, as shown in fig. 5, 2 photoelectric sensors 56 may be provided, and the two photoelectric sensors may be respectively disposed at two sides of the positioning end of the swing arm 52, when the swing arm 52 swings to one side to trigger the photoelectric sensor 56 on one side, the swing arm 52 swings to the other side to trigger the photoelectric sensor 56 on the other side, and thus the swing arm 52 swings reciprocally in a range defined by the two photoelectric sensors 56, and further, the spraying member 51 only washes the bottom surface of the wafer or the bottom surface of the grinding manipulator 331, and accidents cannot be caused beyond a preset range.

The working procedure of example 1 comprises:

the wafer bottom surface cleaning process comprises the following steps: the grinding manipulator 331 moves to the position right above the outer cover 55 with the wafer, the grinding manipulator 331 drives the wafer to rotate, meanwhile, the spraying piece 51 starts to spray liquid, the swing arm 52 drives the spraying piece 51 to swing, and the cleaning of the bottom surface of the whole wafer is completed together.

The grinding manipulator cleaning process comprises the following steps: the grinding manipulator 331 is capable of performing bottom surface cleaning when the wafer is returned after being placed in the moving buffer portion of the second transfer unit 21 without load, and cleaning the bottom surface of the grinding manipulator 331 in a manner completely consistent with cleaning the wafer, and the bottom surface of the grinding manipulator 331 rotates while the shower 51 swings to perform cleaning.

During the above two cleaning processes, the grinding robot 331 stops swinging and receives the shower above the housing 55.

Embodiment 1 utilizes spray piece 51 to realize the non-contact cleaning to the wafer bottom and/or grinding manipulator 331 bottom surface in the motion in-process, can avoid damaging the wafer, has avoided the pollutant that contact cleaning produced to cause secondary pollution to wafer or grinding manipulator 331, does not use the consumptive material in addition this embodiment, need not to change the consumptive material, can show reduction cleaning cost.

Example 2

Fig. 6 to 10 show another floor cleaning device 60 provided in embodiment 2.

As shown in fig. 6, the bottom surface cleaning apparatus 60 is also mounted on the base 311 of the grinding module 3, beside the table 312, on the moving track of the grinding manipulator 331, and can be used to clean the bottom surface of the wafer after grinding during the process of transferring the wafer by the grinding manipulator 331, and can also be used to clean the bottom surface of the grinding manipulator 331.

As shown in fig. 7, in embodiment 2, the bottom surface cleaning apparatus 60 includes a shower 61 and a brush assembly 62, the shower 61 is used to spray fluid upward, and the brush assembly 62 is used to clean the bottom surface of the wafer and/or the grinding robot 331 using brushing force, friction force, or polishing force. The shower 61 and the brush assembly 62 may be operated separately to cooperate to complete cleaning of the bottom surface of the wafer or the bottom surface of the grinding robot 331. The spray member 61 may be a fan-shaped nozzle to achieve a large area spray. The height of the spray piece 61 is lower than that of the brushing assembly 62, the spray piece 61 is used for non-contact cleaning and auxiliary cleaning, and the brushing assembly 62 adopts a contact treatment mode. The spray 61 may be one or more nozzles or spray bars.

The brushing assembly 62 includes a first brushing assembly 63, a second brushing assembly 64, and a polishing assembly 65. Different components may be individually raised and lowered to individually clean the wafer or grinding robot 331.

The first brushing assembly 63 includes a first brushing member 631 and a first support member 632. The first brush 631 may be made of an elastic material such as sponge, PVC, etc. for cleaning the bottom surface of the wafer. The bottom of the first brushing member 631 is in communication with a liquid supply assembly for supplying liquid thereto to maintain the wet state. The first support 632 is connected below the first brush 631 for supporting the first brush 631 to contact the wafer for brushing. Further, as an alternative, the first supporting member 632 may drive the first brushing member 631 to lift, and the first brushing member 631 may lift to contact the wafer to perform brushing after being lifted, and end brushing after being lowered.

The second brushing assembly 64 includes a second brushing element 641 and a second driving element 642. The second brushing member 641 may be a brushing structure having protrusions on the surface thereof, such as a brush or a rolling brush, for cleaning the bottom surface of the grinding robot 331. The second driving member 642 is connected below the second brushing member 641 to drive the second brushing member 641 to move up and down. The second brush 641 is lifted up to contact the bottom surface of the grinding robot 331 to perform brushing, and is lowered down to finish brushing.

The polishing assembly 65 includes a polishing member 651 and a third drive member 652. The polishing member 651 may be made of a hard material such as oilstone for polishing the bottom surface of the grinding manipulator 331. The third driving member 652 is connected below the polishing member 651 to drive the polishing member 651 to be lifted and lowered. The polishing part 651 can contact the bottom surface of the grinding manipulator 331 to polish after being lifted, and polishing is finished after the polishing part is lowered.

Fig. 8 to 10 show the operation of the floor cleaning device 60 in embodiment 2, including:

cleaning the bottom surface of the wafer: referring to fig. 8, when the grinding manipulator 331 moves above the bottom cleaning apparatus 60 with the wafer, the first brushing member 631 contacts with the wafer, the first brushing member 631 can clean the bottom of the wafer after being filled with water, and meanwhile, the grinding manipulator 331 rotates with the wafer, and the spraying member 61 can spray liquid to the bottom of the wafer at the same time, so that the cleaning of the bottom of the wafer is completed under the combined action.

Drying the bottom surface of the wafer: after the cleaning, the grinding robot 331 continues to rotate with the wafer, and the shower 61 sprays air to the bottom of the wafer to dry.

Bottom surface treatment of the grinding manipulator 331: the grinding manipulator 331 performs the bottom surface treatment when the wafer is placed on the moving buffer portion of the second transmission unit 21 and then returns to the above of the bottom surface cleaning device 60 in an empty load, see fig. 9, the grinding and polishing member 651 rises to polish the bottom surface of the grinding manipulator 331, see fig. 10, the second brushing member 641 rises to clean the bottom surface of the grinding manipulator 331, the grinding and polishing member 651 and the second brushing member 641 rise in sequence, the grinding and polishing and cleaning of the bottom surface of the grinding manipulator 331 are completed in sequence in cooperation with the rotation of the bottom surface of the grinding manipulator 331, and the spraying member 61 can spray liquid at the same time.

In summary, the embodiment of the invention realizes that the bottom surface of the wafer is cleaned after grinding, and the bottom surface of the grinding manipulator 331 is cleaned when the grinding manipulator is not provided with a piece, and the cleaning effect is good.

The drawings in the present specification are schematic views, which assist in explaining the concept of the present invention, and schematically show the shapes of the respective parts and their interrelationships. It should be understood that for the purpose of clearly showing the structure of various parts of embodiments of the present invention, the drawings are not drawn to the same scale and like reference numerals are used to designate like parts in the drawings.

In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.

Claims

1. The bottom surface cleaning device is characterized by being arranged on a base of wafer thinning equipment, wherein the wafer thinning equipment comprises a workbench and a grinding manipulator which are used in the process of grinding a wafer, and the bottom surface cleaning device is used for cleaning the bottom surface of the wafer after grinding and/or the bottom surface of the grinding manipulator, is positioned beside the workbench and is positioned on a moving track of the grinding manipulator; the bottom surface cleaning device comprises a spray piece for spraying liquid or gas upwards and is used for cleaning and/or drying the bottom surface of the wafer and/or the grinding manipulator in a non-contact mode.

2. The floor cleaning apparatus of claim 1, further comprising a swing arm, a support, and a driving mechanism, wherein the swing arm is positioned above the support, the free end of the swing arm is fixed with the spray member, and the positioning end of the swing arm is rotatably connected with the driving mechanism, thereby realizing that the driving mechanism controls the swing arm to drive the spray member to swing horizontally.

3. The floor cleaning apparatus of claim 2, further comprising an open-top housing within which the spray member moves.

4. The floor cleaning apparatus of claim 3, further comprising a photoelectric sensor for limiting the swing angle of the swing arm, the photoelectric sensor being mounted on the top end of the support near the positioning end of the swing arm.

5. The floor cleaning apparatus of claim 1, further comprising a brush assembly for cleaning a floor of the wafer and/or the grinding robot.

6. The floor cleaning apparatus of claim 5, wherein the brushing assembly comprises a first brushing assembly, a second brushing assembly, and a polishing assembly.

7. The floor cleaning apparatus of claim 6, wherein the first brushing assembly comprises a first brushing member and a first support member.

8. The floor cleaning apparatus of claim 6, wherein the second brushing assembly comprises a second brushing member and a second driving member.

9. The floor cleaning apparatus of claim 6, wherein the polishing assembly comprises a polishing member and a third drive member.

10. The floor cleaning apparatus of claim 1, wherein the grinding robot is a suction cup type robot.