CN116169562B - Colloid quantum dot light source integrated structure and preparation method thereof - Google Patents
Colloid quantum dot light source integrated structure and preparation method thereof Download PDFInfo
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 86
- 239000000084 colloidal system Substances 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 83
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 81
- 238000005253 cladding Methods 0.000 claims abstract description 79
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 57
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 29
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 40
- 238000000151 deposition Methods 0.000 claims description 28
- 239000002243 precursor Substances 0.000 claims description 28
- 238000001020 plasma etching Methods 0.000 claims description 23
- 239000000243 solution Substances 0.000 claims description 18
- 238000001312 dry etching Methods 0.000 claims description 16
- 238000004026 adhesive bonding Methods 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- -1 cadmium carboxylate Chemical class 0.000 claims description 8
- 229910052793 cadmium Inorganic materials 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 claims description 7
- 230000035484 reaction time Effects 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- 239000012670 alkaline solution Substances 0.000 claims description 4
- 238000004132 cross linking Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 239000005416 organic matter Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 23
- 230000010354 integration Effects 0.000 abstract description 18
- 238000005516 engineering process Methods 0.000 abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 230000001276 controlling effect Effects 0.000 description 6
- 239000002210 silicon-based material Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000725 suspension Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000006862 quantum yield reaction Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/36—Structure or shape of the active region; Materials used for the active region comprising organic materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a colloid quantum point light source integrated structure and a preparation method thereof, which relate to the technical field of light source integration and solve the problem that the quality of a generated semiconductor material is poor in the existing light source integrated technology, and the technology comprises a silicon substrate, a silicon dioxide layer is deposited on the silicon substrate, an amorphous silicon layer is deposited on the silicon dioxide layer, a silicon nitride lower cladding layer is deposited on the amorphous silicon layer, a colloid quantum dot gain layer is generated on the silicon nitride lower cladding layer, and a silicon nitride upper cladding layer is deposited on the colloid quantum dot gain layer; a grating structure is arranged on the silicon nitride upper cladding layer; the silicon nitride upper cladding layer, the colloid quantum dot gain layer and the silicon nitride lower cladding layer form SiN/CQDs/SiN structures with the size of (8-12) mu m and (5-8) mu m; the amorphous silicon layer is positioned right below the silicon nitride lower cladding layer, and the size of the amorphous silicon layer is (2-6) mu m (5-8) mu m; the dimensions of the silicon substrate and the silicon dioxide layer are (18-22) μm.
Description
Technical Field
The invention relates to the technical field of light source integration, in particular to a colloid quantum dot light source integrated structure and a preparation method thereof.
Background
Quantum dots are an important low-dimensional semiconductor material whose dimensions in three dimensions are no more than twice the exciton bohr radius of its corresponding semiconductor material. Quantum dots are generally spherical or spheroidal in shape, with diameters typically between 2-20nm, and common quantum dots are composed of elements IV, II-VI, IV-VI or III-V. Quantum dots are nano-scale semiconductors that emit light of a specific frequency by applying a certain electric field or light pressure to the nano-semiconductor material, and the frequency of the emitted light varies with the size of the semiconductor, so that the color of the emitted light can be controlled by adjusting the size of the nano-semiconductor, which is similar to atoms or molecules in nature because of the characteristic of limiting electrons and electron holes, and thus are called quantum dots. The colloidal quantum dot is an inorganic semiconductor nano material dispersed in a solution, the three-dimensional size of the colloidal quantum dot is usually 1-30nm, and the colloidal quantum dot is obtained by chemical synthesis in the solution and consists of a core, a shell and a ligand.
The light source is one of the key components of the silicon optical chip, and since the silicon material cannot emit light, how to integrate the light source with the silicon substrate is a key in developing the optical transceiver module. The current light source integration technology mainly comprises three kinds, namely single-chip integration, namely growing III-V semiconductor materials on a silicon substrate, and then manufacturing laser devices on the III-V semiconductor materials; secondly, heterogeneous integration is carried out on the silicon substrate by bonding a III-V semiconductor material to the silicon substrate, and then a III-V laser is prepared; and thirdly, hybrid integration, namely firstly preparing a III-V laser, and then integrating the laser with a silicon optical chip in a flip-chip or external laser mode. The three integration modes have the following defects:
1. with monolithic integration, it is very difficult to grow III-V semiconductor materials directly on silicon-based materials due to the large lattice mismatch between III-V semiconductor materials and silicon (e.g., gaAs, inP, and Si have lattice mismatch of 4% and 8%, respectively) and thermal expansion coefficient mismatch, and the mismatch of polar/nonpolar interfaces, resulting in poor quality III-V semiconductor materials.
2. The integration is performed by adopting heterogeneous integration and hybrid integration, and III-V semiconductor materials are required to be bonded to a silicon-based wafer, so that the requirement on accuracy is high, and the problem of high cost in mass production exists.
Disclosure of Invention
The invention aims to solve the problems that the quality of a generated semiconductor material is poor or the precision requirement is high and the large-scale production is not suitable for the existing light source integration technology, and provides a colloid quantum dot light source integration structure and a preparation method thereof.
The invention adopts the following technical scheme for realizing the purposes:
the integrated structure of the colloid quantum dot light source comprises a silicon substrate, wherein a silicon dioxide layer is deposited above the silicon substrate, an amorphous silicon layer is deposited above the silicon dioxide layer, a silicon nitride lower cladding layer is deposited above the amorphous silicon layer, a compact colloid quantum dot gain layer is generated above the silicon nitride lower cladding layer, and a silicon nitride upper cladding layer is deposited above the colloid quantum dot gain layer;
a grating structure is arranged on the silicon nitride upper cladding;
the SiN/CQDs/SiN structure is formed by the silicon nitride upper cladding layer, the colloid quantum dot gain layer and the silicon nitride lower cladding layer, the amorphous silicon layer is positioned under the silicon nitride lower cladding layer, and two ends of the amorphous silicon layer are retracted inwards for a certain distance to form a suspension structure.
Further, the thickness of the silicon dioxide layer is 2-5 μm.
Further, the thickness of the amorphous silicon layer is 180-220nm; the depth of the grating structure is 65-75nm.
Further, the thickness of the silicon nitride lower cladding layer is 90-110nm; the thickness of the gel quantum dot gain layer is 25-35nm; the thickness of the silicon nitride upper cladding layer is 140-160nm.
Further, the SiN/CQDs/SiN structure has a size of (8-12) μm (5-8);
the amorphous silicon layer is positioned right below the silicon nitride lower cladding layer, and the size of the amorphous silicon layer is (2-6) mu m (5-8) mu m;
the dimensions of the silicon substrate and the silicon dioxide layer are (18-22) mu m.
Further, the specific manufacturing method of the SiN/CQDs/SiN structure comprises the following steps: firstly, uniformly gluing the upper cladding layer of silicon nitride, then protecting a selected area by photoresist through an exposure and development method, and finally, carrying out dry etching through RIE (reactive ion etching) to obtain the SiN/CQDs/SiN structure.
The silicon nitride material used in the application has the optical properties of high refractive index, wide wavelength and transparency, and combines the design of the grating structure of the silicon nitride upper cladding layer and the suspension structure of the silicon nitride lower cladding layer, so that the gain effect of the colloidal quantum dots in the microcavity is further enhanced, and meanwhile, the integration of the colloidal quantum dot light source on the silicon nitride platform chip is realized. And the design of grating structure and unsettled structure all can produce the refractive index difference, because this kind of refractive index difference exists for the colloid quantum dot is at the emission light energy after being stimulated by pumping light and forms resonance in the microcavity of colloid quantum dot gain layer, consequently can strengthen the gain effect of colloid quantum dot in the microcavity better, for the silicon photonic device of the high integrated level of direct preparation on the silicon substrate of follow-up, provide a high quantum yield, luminous wavelength adjustable and have the large-scale integrated scheme of potential low cost advantage.
The integrated structure does not need to bond a semiconductor material to a silicon-based wafer, and adopts the colloid quantum dot as a light source, so that the problems that the large lattice mismatch amount, the large thermal expansion coefficient mismatch amount and the large polar/nonpolar interface mismatch exist between the III-V semiconductor material and the silicon-based material in the current monolithic integration, which cause the direct growth of the III-V semiconductor material on the silicon-based material, are solved, the colloid quantum dot is adopted as a gain layer, and the wavelength emitted by the light source can be regulated by changing the size, the components and the morphology of the colloid quantum dot.
In order to achieve the above purpose, the present application further provides a method for preparing an integrated structure of a colloidal quantum dot light source, which includes the following steps:
step 1: depositing a silicon dioxide layer on a silicon substrate;
step 2: depositing an amorphous silicon layer on the silicon dioxide layer;
step 3: depositing a silicon nitride lower cladding layer on the amorphous silicon layer;
step 4: producing a compact colloid quantum dot gain layer on the silicon nitride lower cladding through a spin coating process and an organic cross-linking material;
step 5: depositing a silicon nitride upper cladding layer on the colloidal quantum dot gain layer;
step 6: manufacturing a SiN/CQDs/SiN structure by using a RIE dry etching method;
step 7: a grating structure is arranged on the silicon nitride upper cladding layer;
step 8: and etching the two sides of the amorphous silicon layer inwards by 2-3 mu m by using an alkaline solution through a wet etching process.
Further, the manufacturing method of the colloidal quantum dot gain layer in the step 4 is as follows: under the protection of inert gas, heating a Cd precursor consisting of hexaalkylmethylamine, octadecene and cadmium carboxylate to 290-310 ℃, fully dissolving and stirring until the solution is clear, quickly injecting prepared Se precursor TOP-Se by a hot injection method, quickly reducing the temperature of the solution to 170-190 ℃ after the colloidal quantum dots with target size are obtained by controlling the reaction time, quantitatively adding the Cd precursor and the S precursor ODE-S which are prepared in advance, reacting at 180-210 ℃ to form a shell layer, and repeating the steps until the target size is obtained.
Further, the manufacturing method of the grating structure in the step 7 is as follows: and uniformly gluing the upper silicon nitride cladding, transferring the grating structure pattern onto photoresist through exposure and development, and forming a grating structure on the surface of the upper silicon nitride cladding through RIE dry etching process.
Further, the alkaline solution used in step 8 comprises tetramethylammonium hydroxide.
The beneficial effects of the invention are as follows:
(1) The silicon nitride material used in the application has high refractive index, wide wavelength and transparent optical properties, and the design of the grating structure of the silicon nitride upper cladding layer and the suspension structure of the silicon nitride lower cladding layer is combined, so that the gain effect of the colloidal quantum dots in the microcavity is further enhanced, and meanwhile, the integration of the colloidal quantum dot light source on the silicon nitride platform chip is realized;
(2) The grating structure and the suspended structure in the application are designed to generate refractive index differences, and due to the existence of the refractive index differences, the emitted light energy of the colloid quantum dot after being excited by the pumping light can form resonance in the microcavity of the colloid quantum dot gain layer, so that the gain effect of the colloid quantum dot in the microcavity can be better enhanced, and a large-scale integration scheme with high quantum yield, adjustable luminous wavelength and potential low cost advantage is provided for the subsequent preparation of the high-integration silicon photonic device directly on the silicon substrate;
(3) The integrated structure does not need to bond a semiconductor material to a silicon-based wafer, and adopts the colloid quantum dot as a light source, so that the problems that the large lattice mismatch amount, the large thermal expansion coefficient mismatch amount and the large polar/nonpolar interface mismatch exist between the III-V semiconductor material and the silicon-based material in the current monolithic integration, which cause the direct growth of the III-V semiconductor material on the silicon-based material, are solved, the colloid quantum dot is adopted as a gain layer, and the wavelength emitted by the light source can be regulated by changing the size, the components and the morphology of the colloid quantum dot.
Drawings
FIG. 1 is a schematic diagram of an integrated structure of a colloidal quantum dot light source according to the present invention;
fig. 2 is a schematic structural diagram of a process for preparing an integrated structure of a colloidal quantum dot light source according to the present invention.
Reference numerals: the semiconductor device comprises a 01-silicon substrate, a 02-silicon dioxide layer, a 03-amorphous silicon layer, a 04-silicon nitride lower cladding layer, a 05-colloid quantum dot gain layer, a 06-silicon nitride upper cladding layer and a 07-grating structure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Example 1
As shown in fig. 1 and 2, the embodiment provides a colloidal quantum dot light source integrated structure and a preparation method thereof, the colloidal quantum dot light source integrated structure comprises a silicon substrate 01, a silicon dioxide layer 02 is deposited above the silicon substrate 01, an amorphous silicon layer 03 is deposited above the silicon dioxide layer 02, a silicon nitride lower cladding layer 04 is deposited above the amorphous silicon layer 03, a compact colloidal quantum dot gain layer 05 is generated above the silicon nitride lower cladding layer 04, and a silicon nitride upper cladding layer 06 is deposited above the colloidal quantum dot gain layer 05;
a grating structure 07 is arranged on the silicon nitride upper cladding layer 06;
the silicon nitride upper cladding layer 06, the colloid quantum dot gain layer 05 and the silicon nitride lower cladding layer 04 form SiN/CQDs/SiN structures, and the sizes of the SiN/CQDs/SiN structures are 8 μm by 5 μm;
the amorphous silicon layer 03 is positioned right below the silicon nitride lower cladding 04, and the size of the amorphous silicon layer 03 is 2 μm by 5 μm;
the dimensions of both the silicon substrate 01 and the silicon dioxide layer 02 are 18 x 18 μm.
The preparation method of the colloid quantum dot light source integrated structure comprises the following steps:
step 1: depositing a silicon dioxide layer 02 having a thickness of 2 μm on a silicon substrate 01;
step 2: depositing an amorphous silicon layer 03 with a thickness of 180nm on the silicon dioxide layer 02;
step 3: depositing a silicon nitride lower cladding layer 04 with the thickness of 90nm on the amorphous silicon layer 03 at the temperature of 260 ℃;
step 4: heating a Cd precursor consisting of hexaalkylmethylamine, octadecene and cadmium carboxylate to 290 ℃ under the protection of inert gas nitrogen, fully dissolving and stirring until the solution is clear, quickly injecting TOP-Se which is a prepared Se precursor by a hot injection method, quickly cooling the solution to 170 ℃ after the colloidal quantum dot with the diameter of 9nm is obtained by controlling the reaction time, adding the Cd precursor and the S precursor ODE-S which are prepared in advance in batches, reacting at 180 ℃ to form a shell layer, and repeating the steps until the colloidal quantum dot gain layer 05 with the thickness of 25nm is obtained;
step 5: depositing a 140nm silicon nitride upper cladding layer 06 on the colloid quantum dot gain layer 05;
step 6: uniformly gluing the upper silicon nitride cladding 06, protecting a selected area by photoresist through an exposure and development method, and finally carrying out dry etching through RIE (reactive ion etching) to obtain a SiN/CQDs/SiN structure with the size of 8 mu m x mu m;
step 7: uniformly gluing on the silicon nitride upper cladding layer 06, transferring the pattern of the grating structure 07 onto photoresist through exposure and development, and forming the grating structure 07 on the surface of the silicon nitride upper cladding layer 06 through RIE dry etching process; the depth is 65nm;
step 8: both sides of the amorphous silicon layer 03 were etched inward by a wet etching process using tetramethylammonium hydroxide by 3 μm.
Example 2
As shown in fig. 1 and 2, based on embodiment 1, the method for preparing the colloidal quantum dot light source integrated structure of this embodiment includes the following steps:
step 1: depositing a silicon dioxide layer 02 having a thickness of 3 μm on a silicon substrate 01;
step 2: depositing an amorphous silicon layer 03 with a thickness of 190nm on the silicon dioxide layer 02;
step 3: depositing a silicon nitride lower cladding layer 04 with the thickness of 95nm on the amorphous silicon layer 03 at the temperature of 280 ℃;
step 4: heating a Cd precursor consisting of hexaalkylmethylamine, octadecene and cadmium carboxylate to 300 ℃ under the protection of inert gas nitrogen, fully dissolving and stirring until the solution is clear, quickly injecting TOP-Se which is a prepared Se precursor by a hot injection method, quickly cooling the solution to 180 ℃ after the colloidal quantum dot with the diameter of 9nm is obtained by controlling the reaction time, adding the Cd precursor and the S precursor ODE-S which are prepared in advance in batches, reacting at 190 ℃ to form a shell layer, and repeating the steps until the colloidal quantum dot gain layer 05 with the thickness of 30nm is obtained;
step 5: depositing 145nm of silicon nitride upper cladding layer 06 on the colloid quantum dot gain layer 05;
step 6: uniformly gluing the upper silicon nitride cladding 06, protecting a selected area by photoresist through an exposure and development method, and finally carrying out dry etching through RIE (reactive ion etching) to obtain a SiN/CQDs/SiN structure, wherein the size of the SiN/CQDs/SiN structure is 9 mu m x mu m;
step 7: uniformly gluing on the silicon nitride upper cladding layer 06, transferring the pattern of the grating structure 07 onto photoresist through exposure and development, and forming the grating structure 07 on the surface of the silicon nitride upper cladding layer 06 through RIE dry etching process; the depth is 70nm;
step 8: both sides of the amorphous silicon layer 03 were etched inward by a wet etching process using tetramethylammonium hydroxide by 3 μm.
Example 3
As shown in fig. 1 and 2, based on embodiment 1, the method for preparing the colloidal quantum dot light source integrated structure of this embodiment includes the following steps:
step 1: depositing a silicon dioxide layer 02 having a thickness of 3.5 μm on a silicon substrate 01;
step 2: depositing an amorphous silicon layer 03 with a thickness of 190nm on the silicon dioxide layer 02;
step 3: depositing a silicon nitride lower cladding layer 04 with the thickness of 100nm on the amorphous silicon layer 03 at the temperature of 280 ℃;
step 4: heating a Cd precursor consisting of hexaalkylmethylamine, octadecene and cadmium carboxylate to 300 ℃ under the protection of inert gas nitrogen, fully dissolving and stirring until the solution is clear, quickly injecting TOP-Se which is a prepared Se precursor by a hot injection method, quickly cooling the solution to 190 ℃ after the colloidal quantum dot with the diameter of 9nm is obtained by controlling the reaction time, adding the Cd precursor and the S precursor ODE-S which are prepared in advance in batches, reacting at 200 ℃ to form a shell layer, and repeating the steps until the colloidal quantum dot gain layer 05 with the thickness of 35nm is obtained;
step 5: depositing a 150nm silicon nitride upper cladding layer 06 on the colloid quantum dot gain layer 05;
step 6: uniformly gluing the upper silicon nitride cladding 06, protecting a selected area by photoresist through an exposure and development method, and finally carrying out dry etching through RIE (reactive ion etching) to obtain a SiN/CQDs/SiN structure with the size of 10 mu m x mu m;
step 7: uniformly gluing on the silicon nitride upper cladding layer 06, transferring the pattern of the grating structure 07 onto photoresist through exposure and development, and forming the grating structure 07 on the surface of the silicon nitride upper cladding layer 06 through RIE dry etching process; the depth is 75nm;
step 8: both sides of the amorphous silicon layer 03 were etched inward by a wet etching process using tetramethylammonium hydroxide by 3 μm.
Example 4
As shown in fig. 1 and 2, the preparation method of the colloidal quantum dot light source integrated structure of this embodiment includes the following steps:
step 1: depositing a silicon dioxide layer 02 with a thickness of 5 μm on a silicon substrate 01;
step 2: depositing an amorphous silicon layer 03 with a thickness of 200nm on the silicon dioxide layer 02;
step 3: depositing a silicon nitride lower cladding layer 04 with the thickness of 105nm on the amorphous silicon layer 03 at the temperature of 280 ℃;
step 4: heating a Cd precursor consisting of hexaalkylmethylamine, octadecene and cadmium carboxylate to 310 ℃ under the protection of inert gas nitrogen, fully dissolving and stirring until the solution is clear, quickly injecting TOP-Se which is a prepared Se precursor by a hot injection method, quickly cooling the solution to 190 ℃ after the colloidal quantum dot with the diameter of 9nm is obtained by controlling the reaction time, adding the Cd precursor and the S precursor ODE-S which are prepared in advance in batches, reacting at 200 ℃ to form a shell layer, and repeating the steps until the colloidal quantum dot gain layer 05 with the thickness of 30nm is obtained;
step 5: depositing 155nm of silicon nitride upper cladding 06 on the colloid quantum dot gain layer 05;
step 6: uniformly gluing the upper silicon nitride cladding 06, protecting a selected area by photoresist through an exposure and development method, and finally carrying out dry etching through RIE (reactive ion etching) to obtain a SiN/CQDs/SiN structure with the size of 11 mu m x mu m;
step 7: uniformly gluing on the silicon nitride upper cladding layer 06, transferring the pattern of the grating structure 07 onto photoresist through exposure and development, and forming the grating structure 07 on the surface of the silicon nitride upper cladding layer 06 through RIE dry etching process; the depth is 70nm;
step 8: both sides of the amorphous silicon layer 03 were etched inward by a wet etching process using tetramethylammonium hydroxide by 3 μm.
Example 5
As shown in fig. 1 and 2, the preparation method of the colloidal quantum dot light source integrated structure of this embodiment includes the following steps:
step 1: depositing a silicon dioxide layer 02 with a thickness of 5 μm on a silicon substrate 01;
step 2: depositing an amorphous silicon layer 03 with a thickness of 220nm on the silicon dioxide layer 02;
step 3: depositing a silicon nitride lower cladding layer 04 with the thickness of 110nm on the amorphous silicon layer 03 at the temperature of 280 ℃;
step 4: heating a Cd precursor consisting of hexaalkylmethylamine, octadecene and cadmium carboxylate to 310 ℃ under the protection of inert gas nitrogen, fully dissolving and stirring until the solution is clear, quickly injecting TOP-Se which is a prepared Se precursor by a hot injection method, quickly cooling the solution to 190 ℃ after the colloidal quantum dot with the diameter of 11nm is obtained by controlling the reaction time, adding the Cd precursor and the S precursor ODE-S which are prepared in advance in batches, reacting at 210 ℃ to form a shell layer, and repeating the steps until the colloidal quantum dot gain layer 05 with the thickness of 35nm is obtained;
step 5: depositing a 160nm silicon nitride upper cladding layer 06 on the colloid quantum dot gain layer 05;
step 6: uniformly gluing the upper silicon nitride cladding 06, protecting a selected area by photoresist through an exposure and development method, and finally carrying out dry etching through RIE (reactive ion etching) to obtain a SiN/CQDs/SiN structure with the size of 12 mu m x mu m;
step 7: uniformly gluing on the silicon nitride upper cladding layer 06, transferring the pattern of the grating structure 07 onto photoresist through exposure and development, and forming the grating structure 07 on the surface of the silicon nitride upper cladding layer 06 through RIE dry etching process; the depth is 75nm;
step 8: both sides of the amorphous silicon layer 03 were etched inward by a wet etching process using tetramethylammonium hydroxide by 3 μm.
Claims (10)
1. The integrated structure of the colloidal quantum dot light source is characterized by comprising a silicon substrate (01), wherein a silicon dioxide layer (02) is deposited above the silicon substrate (01), an amorphous silicon layer (03) is deposited above the silicon dioxide layer (02), a silicon nitride lower cladding layer (04) is deposited above the amorphous silicon layer (03), a compact colloidal quantum dot gain layer (05) is generated above the silicon nitride lower cladding layer (04), and a silicon nitride upper cladding layer (06) is deposited above the colloidal quantum dot gain layer (05);
a grating structure (07) is arranged on the silicon nitride upper cladding (06);
the SiN/CQDs/SiN structure is formed by the silicon nitride upper cladding layer (06), the colloid quantum dot gain layer (05) and the silicon nitride lower cladding layer (04), the amorphous silicon layer (03) is positioned under the silicon nitride lower cladding layer (04), and two ends of the amorphous silicon layer (03) are retracted inwards for a certain distance to form a suspended structure.
2. The colloidal quantum dot light source integrated structure according to claim 1, wherein the thickness of the silicon dioxide layer (02) is 2-5 μm.
3. The colloidal quantum dot light source integrated structure according to claim 1, wherein the thickness of the amorphous silicon layer (03) is 180-220nm; the depth of the grating structure (07) is 65-75nm.
4. The integrated structure of colloidal quantum dot light source according to claim 1, wherein the thickness of the silicon nitride lower cladding layer (04) is 90-110nm; the thickness of the gel quantum dot gain layer (05) is 25-35nm; the thickness of the silicon nitride upper cladding layer (06) is 140-160nm.
5. The colloidal quantum dot source integrated structure according to claim 1, wherein the SiN/CQDs/SiN structures have a size of (8-12) μm by (5-8);
the amorphous silicon layer (03) is positioned right below the silicon nitride lower cladding layer (04), and the size of the amorphous silicon layer (03) is (2-6) mu m (5-8) mu m;
the dimensions of the silicon substrate (01) and the silicon dioxide layer (02) are (18-22) mu m.
6. The integrated structure of colloidal quantum dot light source according to claim 1, wherein the specific manufacturing method of the SiN/CQDs/SiN structure is: firstly, uniformly gluing the upper silicon nitride cladding (06), then protecting a selected area by photoresist through an exposure and development method, and finally carrying out dry etching through RIE (reactive ion etching) to obtain the SiN/CQDs/SiN structure.
7. A method for preparing the integrated structure of the colloidal quantum dot light source as claimed in claim 1, comprising the steps of:
step 1: depositing a silicon dioxide layer (02) on a silicon substrate (01);
step 2: depositing an amorphous silicon layer (03) on the silicon dioxide layer (02);
step 3: depositing a silicon nitride lower cladding layer (04) on the amorphous silicon layer (03);
step 4: producing a compact colloid quantum dot gain layer (05) on the silicon nitride lower cladding layer (04) through a spin coating process and an organic matter crosslinking material;
step 5: depositing a silicon nitride upper cladding layer (06) on the colloid quantum dot gain layer (05);
step 6: manufacturing a SiN/CQDs/SiN structure by using a RIE dry etching method;
step 7: a grating structure (07) is arranged on the silicon nitride upper cladding layer (06);
step 8: and etching the two sides of the amorphous silicon layer (03) inwards by 2-3 mu m by using an alkaline solution through a wet etching process.
8. The method for manufacturing the integrated structure of the colloidal quantum dot light source according to claim 7, wherein the manufacturing method of the colloidal quantum dot gain layer (05) in the step 4 is as follows: under the protection of inert gas, heating a Cd precursor consisting of hexaalkylmethylamine, octadecene and cadmium carboxylate to 290-310 ℃, fully dissolving and stirring until the solution is clear, quickly injecting prepared Se precursor TOP-Se by a hot injection method, quickly reducing the temperature of the solution to 170-190 ℃ after the colloidal quantum dots with target size are obtained by controlling the reaction time, quantitatively adding the Cd precursor and the S precursor ODE-S which are prepared in advance, reacting at 180-210 ℃ to form a shell layer, and repeating the steps until the target size is obtained.
9. The method for manufacturing a colloidal quantum dot light source integrated structure according to claim 7, wherein the method for manufacturing the grating structure (07) in step 7 comprises: and uniformly gluing the upper silicon nitride cladding layer (06), transferring the pattern of the grating structure (07) onto the photoresist through exposure and development, and forming the grating structure (07) on the surface of the upper silicon nitride cladding layer (06) through RIE dry etching process.
10. The method of claim 7, wherein the alkaline solution used in step 8 comprises tetramethylammonium hydroxide.
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| CN108400223A (en) * | 2018-05-07 | 2018-08-14 | 深圳技术大学（筹） | Light-emitting diode encapsulation structure, quantum dot sealing unit and preparation method thereof |
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| CN108400223A (en) * | 2018-05-07 | 2018-08-14 | 深圳技术大学（筹） | Light-emitting diode encapsulation structure, quantum dot sealing unit and preparation method thereof |
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