CN116111013B - Light-emitting unit assembly, manufacturing method thereof and display device - Google Patents
Light-emitting unit assembly, manufacturing method thereof and display device Download PDFInfo
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- CN116111013B CN116111013B CN202211671438.3A CN202211671438A CN116111013B CN 116111013 B CN116111013 B CN 116111013B CN 202211671438 A CN202211671438 A CN 202211671438A CN 116111013 B CN116111013 B CN 116111013B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 107
- 239000010410 layer Substances 0.000 claims description 251
- 238000009792 diffusion process Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 13
- 230000000712 assembly Effects 0.000 claims description 6
- 238000000429 assembly Methods 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims 1
- 238000004020 luminiscence type Methods 0.000 abstract 7
- 238000010586 diagram Methods 0.000 description 9
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Abstract
The application discloses luminescence unit subassembly and manufacturing method thereof, backlight unit and display device, wherein, luminescence unit subassembly includes a plurality of luminescence units, every luminescence unit is including the buffer layer that stacks gradually the setting, first semiconductor layer, luminescent layer and second semiconductor layer, wherein, the first semiconductor layer of a plurality of luminescence units is connected, luminescence unit subassembly still includes first electrode layer, first electrode layer lays in the surface that buffer layer was kept away from to first semiconductor layer, and with luminescent layer and second semiconductor layer interval setting, first electrode layer is formed with the first electrode that extends to keeping away from the buffer layer direction in the position of predetermineeing, the quantity of first electrode is less than the quantity of luminescence unit. By the mode, the driving backboard only needs to be aligned with a small amount of first electrodes during alignment, so that the light-emitting unit component does not need to be too accurate during alignment with the driving backboard, and the difficulty of electrode alignment is reduced.
Description
Technical Field
The present invention relates to the field of displays, and more particularly, to a light emitting unit assembly, a method for manufacturing the same, a backlight module, and a display device.
Background
The presence of display devices has become increasingly indispensable in everyday work and life. An inorganic Micro light emitting diode (Micro Light Emitting Diode, micro LED) display is one of the hot spots in the field of the current display research, and compared with an OLED display, the Micro LED display has the advantages of high reliability, low power consumption, high brightness, high response speed and the like.
Micro LED displays generally include a light emitting unit assembly and a driving back plate, each light emitting unit assembly including a plurality of light emitting units, each light emitting unit being a Micro LED. And each of the N electrodes and the P electrodes are electrically connected with the corresponding electrode in the driving backboard, so that power is supplied to the light-emitting units.
When the light-emitting unit component and the driving backboard are aligned, accurate alignment is required. However, since the Micro LED is very small, the N-electrodes and the P-electrodes are also very small, so that alignment of the light emitting unit assembly and the driving back plate is increasingly difficult.
Disclosure of Invention
The technical problem that this application mainly solves is to provide a display drive circuit, array substrate and display panel to solve the accurate counterpoint between the electrode of luminous unit subassembly and drive backplate in the current display panel and become difficult problem.
In order to solve the above-mentioned problem, the application provides a light emitting unit assembly, including a plurality of light emitting units, every light emitting unit is including the buffer layer, first semiconductor layer, luminescent layer and the second semiconductor layer of laminating the setting in proper order, wherein, a plurality of light emitting unit's first semiconductor layer is connected, light emitting unit assembly still includes first electrode layer, first electrode layer lays in the surface that buffer layer was kept away from to first semiconductor layer, and with luminescent layer and second semiconductor layer interval setting, first electrode layer is formed with the first electrode that extends to keeping away from the buffer layer direction in the position of predetermineeing, the quantity of first electrode is less than the quantity of light emitting unit.
Wherein, buffer layer and the first semiconductor layer of a plurality of light emitting units are all the integral structure.
The first semiconductor layer is provided with a plurality of protruding parts on one side far away from the buffer layer, and each protruding part is connected with one light-emitting layer.
The light-emitting unit component further comprises an insulating protection layer, a diffusion layer and a second electrode, wherein the insulating protection layer surrounds the protruding portion of the first semiconductor layer, the light-emitting layer and the side face of the second semiconductor layer, an opening is formed in the position, away from the light-emitting layer, of at least part of the second semiconductor layer, the diffusion layer is arranged on the side, away from the light-emitting layer, of the second semiconductor layer and arranged in the opening, the second electrode is arranged on the side, away from the second semiconductor layer, of the diffusion layer, at least part of the second electrode protrudes out of the opening, and the distance from the surface, away from the buffer layer, of the first electrode to the buffer layer is not smaller than the distance from the surface, away from the buffer layer, of the second electrode to the buffer layer.
Wherein the surface area of the surface of the single first electrode facing away from the buffer layer is greater than the surface area of the surface of the single second electrode facing away from the buffer layer.
The first electrode is one, is configured to be arranged around the plurality of light emitting units, is configured to be in a straight line or a crossed line shape, and is used for dividing the light emitting units into a plurality of areas or is arranged on one side of the plurality of light emitting units; or the first electrode is arranged at the periphery of the area where the plurality of light emitting units are arranged or surrounded by the plurality of light emitting units.
In order to solve the above problems, the present application further provides a method for manufacturing a light emitting unit assembly, including: providing a sheet material in which a buffer layer, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer are sequentially laminated; etching the sheet to remove part of the second semiconductor layer, the light-emitting layer and the first semiconductor layer to form a plurality of mutually-spaced basic light-emitting units; wherein the first semiconductor layer is etched to a depth less than a thickness of the first semiconductor layer; manufacturing a diffusion layer on one side of the second semiconductor layer far away from the light-emitting layer, manufacturing an insulating protection layer on the side surfaces of the second semiconductor layer, the light-emitting layer and part of the first semiconductor layer, wherein an opening is formed in the insulating protection layer on the surface of the diffusion layer far away from the second semiconductor layer; paving a first electrode layer on the etched part of the first semiconductor layer, and forming first electrodes extending in a direction away from the buffer layer at preset positions, wherein the number of the first electrodes is less than that of the light emitting units; a second electrode is formed at the opening to form a plurality of light emitting units spaced apart from each other.
When the first electrode is formed, one first electrode is formed in each light-emitting unit assembly, and the first electrode surrounds the plurality of light-emitting units at the middle position.
When the first electrodes are formed, a plurality of first electrodes are formed in each light-emitting unit assembly, and the first electrodes are arranged around the plurality of light-emitting units, or are configured in a straight line or a cross line shape, so that the plurality of light-emitting units are divided into a plurality of areas, or are arranged on one side of the plurality of light-emitting units.
In order to solve the above problems, the present application further provides a display device, where the display device includes a backlight module and a display panel disposed opposite to the backlight module, and the backlight module is the above backlight module.
The beneficial effects of this application are: the first semiconductor layers in the light-emitting unit assembly are connected together, so that the number of first electrodes connected with the first semiconductor layers in the light-emitting unit assembly is reduced, and accordingly, alignment is only needed to be performed with a small number of first electrodes during alignment, alignment efficiency is improved, and meanwhile, when the light-emitting unit assembly is aligned with the driving backboard, the light-emitting unit assembly is not required to be too accurate, and the difficulty of electrode alignment is reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a cross-sectional view of a first embodiment of a light emitting cell assembly of the present application;
FIG. 2 is a top view of the light emitting cell assembly of FIG. 1;
FIG. 3 is a schematic diagram of a combination of two of the light emitting cell assemblies of FIG. 1;
FIG. 4 is a top view of a second embodiment of a light emitting cell assembly of the present application;
FIG. 5 is a cross-sectional view of the light emitting cell assembly of FIG. 4;
FIG. 6 is a top view of a third embodiment of a light emitting cell assembly of the present application;
FIG. 7 is a cross-sectional view of the light emitting cell assembly of FIG. 6;
fig. 8 is a top view of a fourth embodiment of a light emitting unit assembly of the present application;
fig. 9 is a cross-sectional view of the light emitting unit assembly of fig. 8;
FIG. 10 is a flowchart of a method for fabricating a light emitting unit assembly according to an embodiment of the present disclosure;
fig. 11 is a schematic structural diagram corresponding to S51 in fig. 7;
fig. 12 is a schematic structural diagram corresponding to S52 in fig. 7;
fig. 13 is a schematic structural diagram corresponding to S53 in fig. 7;
fig. 14 is a schematic structural diagram corresponding to S54 in fig. 7;
fig. 15 is a schematic structural diagram corresponding to S55 in fig. 7;
FIG. 16 is a schematic diagram of a bonding structure of a light emitting unit assembly and a driving back plate;
fig. 17 is a cross-sectional view of an embodiment of a display device of the present application.
Reference numerals illustrate:
11. a buffer layer; 12. a first semiconductor layer; 13. a light emitting layer; 15. a second semiconductor layer; 16. a diffusion layer; 17/27/37/47, second electrode; 18. an insulating protective layer; 19. a first electrode layer; 191/291/391/491, first electrode; 61/71, a light emitting unit assembly; 62. a drive back plate; 63. conducting resin; 72 shows a panel.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The terminology used in the embodiments of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this application and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise, the "plurality" generally includes at least two, but does not exclude the case of at least one.
It should be understood that the term "and/or" as used herein is merely one relationship describing the association of the associated objects, meaning that there may be three relationships, e.g., a and/or B, may represent: a exists alone, A and B exist together, and B exists alone. In addition, the character "/" herein generally indicates that the front and rear associated objects are an "or" relationship.
It should be understood that the terms "comprises," "comprising," or any other variation thereof, as used herein, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of other like elements in a process, method, article or apparatus that comprises the element.
It should be noted that, in the embodiment of the present application, directional indications (such as up, down, left, right, front, and rear … …) are referred to, and the directional indications are merely used to explain the relative positional relationship, movement conditions, and the like between the components in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indications are correspondingly changed.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the present application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.
The design thought of the application is as follows: through the first semiconductor layer intercommunication with a plurality of light emitting units, make a plurality of light emitting units share a first semiconductor layer, reduce the quantity of the first electrode of connecting first semiconductor layer again to only need counterpoint with a small amount of first electrode when counterpoint, improve counterpoint efficiency, make light emitting unit subassembly and drive backplate counterpoint when simultaneously, do not need too accurate, reduced the degree of difficulty that the electrode counterpoint.
Referring to fig. 1, fig. 1 is a cross-sectional view of a first embodiment of a light emitting unit assembly of the present application. In the present embodiment, the light emitting unit assembly includes a plurality of light emitting units (not shown) and a first electrode layer 19.
Each light emitting unit includes a buffer layer 11, a first semiconductor layer 12, a light emitting layer 13, a second semiconductor layer 15, a diffusion layer 16, and a second electrode 17, which are sequentially stacked. In addition, in order to prevent electrical connection between adjacent light emitting units, the light emitting units further include an insulating protection layer 18. An insulating protective layer 18 is provided around the side surfaces of the first semiconductor layer 12, the light emitting layer 13, and the second semiconductor layer 15. An opening is formed at a surface of at least a portion of the second semiconductor layer 15 away from the light emitting layer 13, and a diffusion layer 16 is disposed at a side of the second semiconductor layer 15 away from the light emitting layer 13 and in the opening. The second electrode 17 is disposed on a side of the diffusion layer 16 away from the second semiconductor layer 15, partially disposed in the opening, and at least a portion of the second electrode 17 protrudes from the opening. In other embodiments, the partial structure may be adjusted as needed, and may be any structure of a conventional semiconductor light emitting unit.
Wherein the first semiconductor layers 12 of the plurality of light emitting cells are connected. Specifically, the buffer layer 11 and the first semiconductor layer 12 of the plurality of light emitting units are all integrally formed. The first semiconductor layer 12 is formed with a plurality of protrusions each of which is connected to one of the light emitting layers 13 at a side remote from the buffer layer 11. The insulating protective layer 18 surrounds the portion of the protruding portion of the first semiconductor layer 12. The insulating protective layers 18 of each light emitting cell are not connected to each other with a space formed therebetween, thereby exposing a portion of the first semiconductor layer 12. The first semiconductor layer 12 in the light emitting unit assembly is an integral structure, not a plurality of structures connected, and can ensure good commonality and prevent abnormality of part of the light emitting units due to abnormal connection.
The first electrode layer 19 is laid on the surface of the first semiconductor layer 12 away from the buffer layer 11, i.e., the exposed portion of the insulating protection layer 18. In practice, the first electrode layer 19 is also integral. The thickness of the first electrode layer 19 is smaller than that of the insulating layer to prevent the first electrode layer 19 from being connected to the second electrode 17 across the insulating protection layer 18, thereby inducing a short circuit. The first electrode layer 19 is separated from the light emitting layer 13 and the second semiconductor layer 15 by the insulating protective layer 18. The first electrode layer 19 is formed with first electrodes 191 extending in a direction away from the buffer layer 11 at predetermined positions, and the number of the first electrodes 191 is less than the number of the light emitting units. Preferably, the first electrodes 191 are disposed parallel to the light emitting units and are perpendicular to the buffer layer 11. The first electrode layer 19 connects the first semiconductor layer 12 at the gaps between the light emitting cells, and therefore has a large number of connection points, and has a sufficient connection area, so that a good connection effect can be achieved, and can be shared when conducting electricity.
The distance from the surface of the first electrode 191 away from the buffer layer 11 to the buffer layer 11 is not less than the distance from the surface of the second electrode 17 away from the buffer layer 11 to the buffer layer 11. That is, the height of the first electrode 191 is not lower than the height of the light emitting unit, calculated from the surface of the buffer layer 11. Preferably, the distance from the surface of the first electrode 191 away from the buffer layer 11 to the buffer layer 11 is greater than the distance from the surface of the second electrode 17 away from the buffer layer 11 to the buffer layer 11, that is, the height of the first electrode 191 is higher than the height of the light emitting unit, calculated from the surface of the buffer layer 11. Therefore, when the connection with an external part (e.g., a driving back plate) is made, the fewer number of first electrodes 191 can be better connected, ensuring the connection quality. Meanwhile, the first electrode 191 and the second electrode 17 can be better distinguished, a certain help is provided for connection alignment, and the difficulty of connection alignment is reduced.
Referring further to fig. 2, fig. 2 is a top view of the light emitting unit assembly in fig. 1. Wherein the first electrode 191 is one configured to be disposed around the plurality of light emitting units. The surface area of the single first electrode 191 away from the surface of the buffer layer 11 is larger than the surface area of the single second electrode 17 away from the surface of the buffer layer 11. This arrangement is to separate the arrangement region of the first electrode 191 and the second electrode 17, and only the first electrode 191 or the second electrode 17 is arranged in one region, so that alignment at the time of connection can be greatly facilitated. In addition, since the surface area of the first electrode 191 is larger, a sufficient connection area can be obtained even if the number of the first electrodes 191 is small.
In addition, a plurality of light emitting units may be combined with each other to cooperate. Referring to fig. 3, fig. 3 is a schematic diagram illustrating a combination of two light emitting unit components in fig. 1. The two light emitting cell assemblies have the same structure and each include a buffer layer 11, a first semiconductor layer 12, a light emitting layer 13, a second semiconductor layer 15, a diffusion layer 16, a second electrode 17, an insulating protection layer 18, a first electrode layer 19, and a first electrode 191. The two light emitting unit assemblies may be bonded together by adhesion or the like, or alternatively, the first semiconductor layer 12 and the buffer layer 11 between the two light emitting unit assemblies may be integrally formed.
If the first semiconductor layer 12 is an anode and the second semiconductor layer 15 is a cathode, the first electrode 191 is an anode and the second electrode 17 is a cathode; if the first semiconductor layer 12 is a cathode and the second semiconductor layer 15 is an anode, the first electrode 191 is a cathode and the second electrode 17 is an anode.
Through connecting the first semiconductor layer 12 in the light emitting unit assembly together, reduce the quantity of the first electrode 191 that is connected with the first semiconductor layer 12 in the light emitting unit assembly to only need counterpoint with a small amount of first electrode 191 when counterpoint, improve counterpoint efficiency, make light emitting unit assembly and drive backplate when counterpoint simultaneously, do not need too accurate, reduced the degree of difficulty that the electrode counterpoint.
Referring to fig. 4 and 5, fig. 4 is a top view of a second embodiment of the light emitting unit assembly of the present application, and fig. 5 is a cross-sectional view of the light emitting unit assembly of fig. 4. In this embodiment, the overall structure is the same as that of the first embodiment, except that four first electrodes 291 are provided at the periphery of the region where the plurality of light emitting units are located. In other embodiments, the number of the first electrodes 291 may be adjusted according to the need, and the number is at least one, and the upper limit of the number is not limited, and only the number is required to be smaller than the number of the second electrodes 27. The number of the first electrodes 291 is reduced by the arrangement mode, so that the first electrodes 291 are only required to be aligned with a small number of first electrodes 291 during alignment, the alignment efficiency is improved, the alignment is not required to be too accurate, and the alignment difficulty is reduced; meanwhile, the surface area of the single first electrode 291 is larger than that of the single second electrode 27, and the first electrode 291 is positioned around the second electrode 27, so that the alignment is convenient.
Referring to fig. 6 and 7, fig. 6 is a top view of a third embodiment of the light emitting unit assembly of the present application, and fig. 7 is a cross-sectional view of the light emitting unit assembly of fig. 6. In this embodiment, the overall structure is the same as that of the first embodiment, except that the first electrode 391 is configured to be circumferentially disposed by a plurality of light emitting cells, i.e., the second electrode 37 is disposed circumferentially around the first electrode 391. The arrangement reduces the number of the first electrodes 391, so that the first electrodes 391 only need to be aligned with a small number of the first electrodes 391 during alignment, thereby improving the alignment efficiency, ensuring that the alignment is not too accurate and reducing the alignment difficulty; meanwhile, the surface area of the single first electrode 391 is larger than that of the single second electrode 37, so that the position of the first electrode 391 can be well determined, and the alignment is easy.
Referring to fig. 8 and 9, fig. 8 is a top view of a fourth embodiment of the light emitting unit assembly of the present application, and fig. 9 is a cross-sectional view of the light emitting unit assembly of fig. 8. In this embodiment, the overall structure is the same as that of the first embodiment, except that the first electrodes 491 are arranged in a cross-line shape, dividing each light-emitting unit into a plurality of regions. The arrangement mode also reduces the number of the first electrodes 491, so that the first electrodes 491 only need to be aligned with a small number of the first electrodes 491 during alignment, the alignment efficiency is improved, the alignment is not required to be too accurate, and the alignment difficulty is reduced; while the surface area of the single first electrode 491 is larger than that of the single second electrode 47, wherein the number of the first electrodes 491 is only one, and the crossed linear design makes the alignment area large, so that the alignment is easier.
Alternatively, in other embodiments, the first electrode 491 may be linear. In addition, the first electrode 491 may be disposed on one side of the light emitting unit. When the first electrode 491 is plural, it may be surrounded by plural light emitting units. The design modes can achieve the effect of being simpler when the back plate is aligned with the driving back plate.
Referring to fig. 10, fig. 10 is a flowchart of an embodiment of a method for manufacturing a light emitting unit assembly of the present application. In this embodiment, the manufacturing method includes the steps of:
in S51, referring to fig. 11, a sheet in which the buffer layer 11, the first semiconductor layer 12, the light-emitting layer 13, and the second semiconductor layer 15 are sequentially stacked is provided. In general, the buffer layer 11, the first semiconductor layer 12, the light emitting layer 13, and the second semiconductor layer 15 may be grown on a substrate.
In S52, referring to fig. 12, the sheet is etched to remove portions of the second semiconductor layer 15, the light emitting layer 13 and the first semiconductor layer 12, so as to form a plurality of mutually spaced basic light emitting units. Wherein the first semiconductor layer 12 is etched to a depth less than the thickness of the first semiconductor layer 12. That is, a portion of the first semiconductor layer 12 at a position is etched and not etched completely, and a portion remains, so that the first semiconductor layer 12 of the light emitting unit assembly is in a unitary structure without being separated. The etching may be performed using photolithography, for example, the sheet is a blue sheet, and the etching may be performed using yellow light.
In S53, referring to fig. 13, a diffusion layer 16 is formed on a side of the second semiconductor layer 15 away from the light emitting layer 13.
In S54, referring to fig. 14, an insulating protection layer 18 is formed on the second semiconductor layer 15, the light emitting layer 13, and a portion of the first semiconductor layer 12. Wherein the insulating protection layer 18 is formed with an opening at a surface of the diffusion layer 16 remote from the second semiconductor layer 15.
In S55, referring to fig. 15, the first electrode layer 19 is laid on the etched portion of the first semiconductor layer 12, and a first electrode 191 extending away from the buffer layer 11 is formed at a predetermined position. Note that the number of the first electrodes 191 is less than the number of the light emitting units. Meanwhile, the second electrode 17 is formed at the opening of the insulating protection layer 18, thereby forming a plurality of light emitting cells spaced apart from each other. The distance from the surface of the first electrode 191 away from the buffer layer 11 to the buffer layer 11 is not less than the distance from the surface of the second electrode 17 away from the buffer layer 11 to the buffer layer 11. That is, the height of the first electrode 191 is not lower than the height of the light emitting unit, calculated from the surface of the buffer layer 11. Preferably, the distance from the surface of the first electrode 191 away from the buffer layer 11 to the buffer layer 11 is greater than the distance from the surface of the second electrode 17 away from the buffer layer 11 to the buffer layer 11, that is, the height of the first electrode 191 is higher than the height of the light emitting unit, calculated from the surface of the buffer layer 11.
Preferably, in forming the first electrode 191, one first electrode 191 is formed in each light emitting unit assembly, and the first electrode 191 encloses a plurality of light emitting units at intermediate positions. In addition, the arrangement manner of the first electrode 191 and the second electrode 17 may be set as desired in any one of the embodiments of the above-described light emitting unit assemblies, for example, when the first electrode 191 is formed, a plurality of first electrodes 191 are formed in each light emitting unit assembly, the first electrodes 191 are disposed around the plurality of light emitting units, or are arranged in a straight line or a cross line shape, partition the plurality of light emitting units into a plurality of regions, or are disposed at one side of the plurality of light emitting units.
By the method, the first semiconductor layers in the manufactured light-emitting unit assembly are connected together, so that the number of the first electrodes connected with the first semiconductor layers in the light-emitting unit assembly is reduced, and accordingly, alignment is only needed to be carried out with a small number of the first electrodes during alignment, and the difficulty in electrode alignment is reduced because the light-emitting unit assembly is not required to be too accurate when the light-emitting unit assembly is aligned with the driving backboard.
Referring to fig. 16 in combination, fig. 16 is a schematic structural diagram of the bonding between the light emitting unit assembly and the driving back plate. The light-emitting unit assembly 61 is a light-emitting unit assembly according to any one of the above, or the light-emitting unit assembly 61 is a light-emitting unit assembly manufactured by the manufacturing method of any one of the above. The driving back plate 62 may be bonded to the light emitting unit assembly 61 through a conductive adhesive 63. The first electrodes of the light emitting unit assembly 61 are arranged separately from the second electrodes, so that a larger area can be achieved, and the number of the first electrodes is small, so that alignment can be performed more easily when bonding is performed, and alignment efficiency is improved. The conductive paste 63 is preferably an anisotropic conductive paste.
Referring to fig. 17, fig. 17 is a cross-sectional view of an embodiment of a display device according to the present application. The display device includes a light emitting unit assembly 71 and a display panel 72 disposed opposite to the light emitting unit assembly 71, wherein the light emitting unit assembly 71 is the light emitting unit assembly 71, and a driving back plate is further bonded to one surface of the light emitting unit assembly. Since the first electrodes of the light emitting unit assembly 71 are arranged separately from the second electrodes, a larger area can be achieved, and the number of the first electrodes is smaller, alignment can be more easily performed when the back plate is driven by bonding, and alignment efficiency is improved.
By the mode, the first semiconductor layers in the light-emitting unit assembly in the display device are connected together, the number of the first electrodes connected with the first semiconductor layers in the light-emitting unit assembly is reduced, so that the light-emitting unit assembly and the driving backboard are aligned only by a small number of the first electrodes in alignment, the light-emitting unit assembly is not required to be too accurate, and the difficulty of electrode alignment is reduced.
The beneficial effects of this application are: by connecting the first semiconductor layers together in the light emitting cell assembly, the number of first electrodes connected to the first semiconductor layers in the light emitting cell assembly is reduced,
the first electrode and the second electrode are arranged separately, so that the first electrode can be larger in area, and therefore when the first electrode and the second electrode are aligned, the first electrode is only required to be aligned with a small amount of first electrodes, alignment efficiency is improved, and meanwhile, when the light-emitting unit component and the driving backboard are aligned, the light-emitting unit component is not required to be too accurate, and electrode alignment difficulty is reduced.
The foregoing is only examples of the present application, and is not intended to limit the scope of the patent application, and all equivalent structures or equivalent processes using the descriptions and the contents of the present application or direct 0 or indirect application in other related technical fields are included in the scope of the patent protection of the present application.
Claims (7)
1. The light-emitting unit assembly comprises a plurality of light-emitting units, wherein each light-emitting unit comprises a buffer layer, a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially stacked, and is characterized in that the first semiconductor layers of the light-emitting units are connected, the light-emitting unit assembly further comprises first electrode layers, the first electrode layers are paved on the surface, far away from the buffer layer, of the first semiconductor layers, are arranged at intervals with the light-emitting layers and the second semiconductor layers, first electrodes extending towards the direction far away from the buffer layer are formed on the first electrode layers at preset positions, and the number of the first electrodes is smaller than that of the light-emitting units;
the light emitting unit assembly further includes a diffusion layer and a second electrode; an opening is formed at the surface of at least part of the second semiconductor layer far away from the light-emitting layer, and the diffusion layer is arranged at one side of the second semiconductor layer far away from the light-emitting layer and in the opening;
the distance from the surface of the first electrode away from the buffer layer to the buffer layer is greater than the distance from the surface of the second electrode away from the buffer layer to the buffer layer;
the first electrode is one and is configured in a cross line shape to divide the plurality of light emitting units into a plurality of regions.
2. The light emitting cell assembly of claim 1 wherein the buffer layer and the first semiconductor layer of the plurality of light emitting cells are each of unitary construction.
3. The light emitting unit assembly of claim 2, wherein the first semiconductor layer forms a plurality of protrusions on a side remote from the buffer layer, each protrusion being connected to one of the light emitting layers.
4. The light-emitting unit assembly according to claim 3, further comprising an insulating protective layer disposed around the convex portion of the first semiconductor layer, the light-emitting layer, and a side surface of the second semiconductor layer, the second electrode being disposed on a side of the diffusion layer remote from the second semiconductor layer, and at least a portion of the second electrode protruding from the opening.
5. The light emitting cell assembly of claim 4 wherein a surface area of a surface of the individual first electrode that is remote from the buffer layer is greater than a surface area of a surface of the individual second electrode that is remote from the buffer layer.
6. A method of manufacturing a light emitting unit assembly, the method comprising:
providing a sheet material in which a buffer layer, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer are sequentially laminated;
etching the sheet to remove part of the second semiconductor layer, the light-emitting layer and the first semiconductor layer to form a plurality of mutually-spaced basic light-emitting units; wherein the first semiconductor layer is etched to a depth less than a thickness of the first semiconductor layer;
manufacturing a diffusion layer on one side of the second semiconductor layer far away from the light-emitting layer, manufacturing an insulating protection layer on the side surfaces of the second semiconductor layer, the light-emitting layer and part of the first semiconductor layer, wherein an opening is formed in the insulating protection layer on the surface of the diffusion layer far away from the second semiconductor layer;
paving first electrode layers on etched parts of the first semiconductor layers, and forming first electrodes extending away from the buffer layers at preset positions, wherein the number of the first electrodes is less than that of the light emitting units; forming a second electrode at the opening to form a plurality of light emitting units spaced apart from each other;
manufacturing a diffusion layer and a second electrode of the light-emitting unit component; an opening is formed at the surface of at least part of the second semiconductor layer far away from the light-emitting layer, and the diffusion layer is arranged at one side of the second semiconductor layer far away from the light-emitting layer and in the opening;
manufacturing the distance from the surface of the first electrode far away from the buffer layer to be larger than the distance from the surface of the second electrode far away from the buffer layer to the buffer layer;
in forming the first electrode, one of the first electrodes is formed in each of the light emitting cell assemblies, and the first electrode is configured in a cross line shape to divide the plurality of light emitting cells into a plurality of regions.
7. A display device comprising a light emitting unit assembly and a display panel disposed opposite the light emitting unit assembly, wherein the light emitting unit assembly is the light emitting unit assembly of any one of claims 1-5.
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