CN116088080B - Light intensity modulation chip, manufacturing method thereof, optical sensor and positioning system - Google Patents
Light intensity modulation chip, manufacturing method thereof, optical sensor and positioning system Download PDFInfo
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- CN116088080B CN116088080B CN202310363579.7A CN202310363579A CN116088080B CN 116088080 B CN116088080 B CN 116088080B CN 202310363579 A CN202310363579 A CN 202310363579A CN 116088080 B CN116088080 B CN 116088080B
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- G—PHYSICS
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- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00087—Holes
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0808—Mirrors having a single reflecting layer
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/18—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors
- G02B7/182—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors for mirrors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The application discloses a light intensity modulation chip and a manufacturing method thereof, an optical sensor and a positioning system, and relates to the technical field of semiconductors. The light intensity modulation chip comprises a silicon dioxide layer, a first basal layer, a second basal layer and a metal reflecting layer. The first substrate layer is provided with a first surface and a second surface which are opposite, and is connected with the silicon dioxide layer through the second surface; the second substrate layer and the first substrate layer are respectively arranged on two opposite sides of the silicon dioxide layer; the silicon dioxide layer is of an annular structure so as to form a modulation cavity between the first substrate layer and the second substrate layer; the metal reflecting layer is arranged on the first surface and is used for outputting light with a specified wave band after intensity modulation; the second substrate layer is provided with a third surface and a mounting surface which are opposite, the mounting surface is provided with a preset inclination angle relative to the third surface, and the preset inclination angle is an acute angle formed between the light passing through the filter plate of a specified wave band and the central axis of the filter plate. Therefore, the method has the advantages of high coupling efficiency and capability of improving the induction sensitivity of the optical sensor.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a light intensity modulation chip, a manufacturing method thereof, an optical sensor and a positioning system.
Background
MEMS (Micro-Electro-Mechanical System, micro-electromechanical system) sensor has characteristics such as microminiaturization, intellectuality, high integration, has batch production, advantage with low costs. The optical MEMS sensor is widely applied to strong electromagnetic interference environments such as aerospace, extra-high voltage, high-speed rail bridges and the like in the prior art due to excellent electromagnetic interference resistance, and gradually becomes a preferred substitute of an electrical MEMS device.
According to the deflection angle of the light rays output by the double-fiber collimator in the optical sensor, the vibrating mirror chip for modulating the light intensity in the sensor needs to be synchronously adjusted so that the receiving surface of the vibrating mirror chip is perpendicular to the output light rays as much as possible. In the prior art, a person skilled in the art generally adopts a mode of bonding a micro gasket with an inclined angle to the bottom of a chip to adjust the placement angle of a vibrating mirror chip. When the sensor has long service time or is affected by external environment to generate abnormal conditions such as vibration, the placement angle of the vibrating mirror chip is easy to change due to the movement, falling or abrasion of auxiliary adjusting elements such as gaskets, and the problem that the coupling performance of the sensor is reduced or even fails is caused.
In addition, the optical sensors for power modulation in the prior art cannot be simply connected in series, and a positioning system is generally formed by one-to-one correspondence of a light source, the optical sensors and a receiver, so that the positioning system has the defects of higher manufacturing cost, complex structure, inconvenience in maintenance and management and the like correspondingly.
Disclosure of Invention
The invention aims to provide a light intensity modulation chip, a manufacturing method thereof, an optical sensor and a positioning system, which improve the coupling efficiency of the light intensity modulation chip through an inclined mounting surface and effectively improve the performance and the efficacy of the light intensity modulation chip and the optical sensor.
Embodiments of the present application are implemented as follows:
the first aspect of the embodiments of the present application provides a light intensity modulation chip, which includes a silicon dioxide layer, a first substrate layer, a second substrate layer, and a metal reflective layer. The first substrate layer is provided with a first surface and a second surface which are opposite, and the first substrate layer is connected with the silicon dioxide layer through the second surface; the second substrate layer and the first substrate layer are respectively arranged on two opposite sides of the silicon dioxide layer; the silicon dioxide layer is of an annular structure so as to form a modulation cavity between the first substrate layer and the second substrate layer; the metal reflecting layer is arranged on the first surface and is used for outputting light with a specified wave band after intensity modulation; the second substrate layer is provided with a third surface and a mounting surface which are opposite, the mounting surface is provided with a preset inclination angle relative to the third surface, and the preset inclination angle is an acute angle formed between the second substrate layer and the central axis of the filter after the light of the specified wave band passes through the filter.
In one embodiment, the first substrate layer includes a support portion and a floating island portion; the supporting part is of an annular structure, the floating island part is arranged on the inner side of the supporting part, and the floating island part is connected with the supporting part through a cantilever structure.
In one embodiment, the second substrate layer has a plurality of uniformly distributed through holes at the center thereof, and the through holes extend from the mounting surface to the third surface.
In an embodiment, the central axes of the through holes are parallel to each other, and the central axes are perpendicular to the third surface.
A second aspect of the embodiments of the present application provides a method for manufacturing a light intensity modulation chip, including: providing an SOI wafer, wherein the SOI wafer comprises a silicon dioxide layer positioned in the middle layer, and a first basal layer and a second basal layer positioned on two opposite sides of the silicon dioxide layer; etching the first substrate layer by an etching method to form a supporting part and a floating island part which are connected by a cantilever structure; forming a metal reflecting layer on the first substrate layer by an evaporation method; taking the exposed surface of the metal reflecting layer as a reference basal plane, deflecting the SOI wafer by a preset inclination angle, and etching the second basal layer by an etching method to form a mounting surface; the intermediate region of the silicon dioxide layer is removed by a buffer solution to form a modulation cavity between the floating island portion and the second substrate layer.
In one embodiment, the method of manufacturing further comprises, prior to removing the intermediate region of the silicon dioxide layer by the buffer solution: and forming a plurality of uniformly distributed through holes in the central area of the second substrate layer by an etching method.
A third aspect of the embodiments of the present application provides an optical sensor, including a filter, a dual-fiber collimator, and a light intensity modulation chip provided in the first aspect and any embodiment of the present application. The filter is used for screening light of a specified wave band and reflecting light of other wave bands; the light intensity modulation chip is arranged on one side of the filter plate, and the mounting surface is parallel to the emergent surface of the filter plate, so that the metal reflecting layer receives light which is vertically incident and has a specified wave band; the double-fiber collimator is arranged on the other side of the filter plate and is used for returning the light which is subjected to intensity modulation and has a specified wave band.
In an embodiment, the incident surface of the filter is disposed at a beam waist position of the output light of the dual-fiber collimator, and the incident surface is perpendicular to a central axis of the dual-fiber collimator.
A fourth aspect of the present embodiments provides a positioning system comprising a light source, a plurality of optical sensors, a beam splitter and a plurality of receivers provided in the third aspect and any of the embodiments of the present application. Wherein, all optical sensors are connected in series, and the first optical sensor positioned at the end point is connected with the light source; an optical sensor for outputting an intensity-modulated light of a prescribed wavelength band; the optical splitter is connected with the first optical sensor and is used for splitting light according to different designated wave bands; each receiver is connected with the beam splitter, and one receiver is used for detecting the intensity of light of a specified wave band; the receivers are in one-to-one correspondence with the optical sensors for different designated bands.
In one embodiment, the positioning system further comprises a circulator having an input end and two output ends, the input end is connected to the light source, one output end is connected to the first optical sensor, and the other output end is connected to the beam splitter.
Compared with the prior art, the beneficial effects of this application are: the light intensity modulation chip is firmly assembled through the mounting surface with the preset inclination angle, so that when the sensor detects the physical quantity to be detected, light with a specified wave band can vertically enter the metal reflecting layer and be reflected after light intensity modulation, and the coupling efficiency of the light intensity modulation chip is improved; the detection sensitivity and the detection resolution of the optical sensor are improved through the cantilever structure; the application also plays good limiting effect through a plurality of independent and mutually parallel through-holes in the center of the second basal layer.
According to the positioning system, the plurality of sensors are connected in series with the light splitter into a whole through the circulator, the plurality of sensors in the positioning system can detect and position the physical quantity to be detected only by one light source, when the physical quantity to be detected changes, external factors influence the intensity modulation of the light intensity modulation chip in the optical sensor on the light of the appointed wave band, when the light subjected to the intensity modulation is conveyed to the receiver corresponding to the sensor through the circulator and the light splitter, the receiver can detect the light with the light intensity obviously changed, and then the corresponding optical sensor is determined according to the wave band of the light. Therefore, the positioning system provided by the application realizes the serial connection of the optical sensors and reduces the light source to one, and the manufacturing cost and the production cost of the positioning system are effectively reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting the scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of an overall structure of a light intensity modulation chip according to an embodiment of the present disclosure;
FIG. 2 is a schematic front view of an optical intensity modulation chip according to an embodiment of the disclosure;
FIG. 3 is a schematic cross-sectional view of a light intensity modulation chip according to an embodiment of the disclosure;
FIG. 4 is a schematic flow chart of a manufacturing method of an optical intensity modulation chip according to an embodiment of the disclosure;
FIG. 5 is a schematic diagram of an SOI wafer according to an embodiment of the present application;
FIG. 6 is a schematic diagram of etching a via in a second substrate layer according to one embodiment of the present disclosure;
FIG. 7 is a schematic illustration of etching a first substrate layer according to one embodiment of the present disclosure;
FIG. 8 is a schematic diagram of a vapor deposited metal reflective layer according to an embodiment of the present disclosure;
FIG. 9 is a schematic illustration of etching a second substrate layer to form a mounting surface, as shown in an embodiment of the present application;
FIG. 10 is a schematic view of a middle region of a removed silicon dioxide layer according to an embodiment of the present application;
FIG. 11 is a schematic diagram of an optical sensor according to an embodiment of the present disclosure;
fig. 12 is a schematic structural diagram of a positioning system according to an embodiment of the present application.
Icon: 1-a light intensity modulation chip; 2-an optical sensor; a 3-positioning system; a 10-silicon dioxide layer; 11-a first substrate layer; 12-a second substrate layer; 13-a metal reflective layer; 14-modulating the cavity; 111-a first surface; 112-a second surface; 113-a support; 114-floating island section; 115-cantilever structure; 121-a third surface; 122-a mounting surface; 123-through holes; 20-a base; 21-a dual fiber collimator; 22-a filter; 201-a first optical sensor; 210-corset position; 211-a first optical fiber; 212-a second optical fiber; 221-an entrance face; 222-an exit face; 31-a light source; a 32-circulator; 33-beam splitters; 34-receiver.
Detailed Description
The terms "first," "second," "third," and the like are used merely for distinguishing between descriptions and not for indicating a sequence number, nor are they to be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal," "vertical," "overhang," and the like do not denote a requirement that the component be absolutely horizontal or overhang, but rather may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present application, it should be noted that, directions or positional relationships indicated by terms such as "inner", "outer", "left", "right", "upper", "lower", etc. are directions or positional relationships based on those shown in the drawings, or those that are conventionally put in use for the product of the application, are merely for convenience of description and simplification of the description, and are not indicative or implying that the apparatus or element to be referred to must have a specific direction, be configured and operated in a specific direction, and therefore should not be construed as limiting the present application.
In the description of the present application, unless explicitly stated and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements.
The technical solutions of the present application will be clearly and completely described below with reference to the accompanying drawings.
Referring to fig. 1 to 3, fig. 1 is a schematic diagram illustrating an overall structure of a light intensity modulation chip 1 according to an embodiment of the present application; fig. 2 is a schematic front view of the light intensity modulation chip 1 according to an embodiment of the present application; fig. 3 is a schematic cross-sectional view of the light intensity modulation chip 1 according to an embodiment of the present application. As shown in fig. 1 to 3, the present application provides a light intensity modulation chip 1 including a silicon dioxide layer 10, a first base layer 11, a second base layer 12, and a metal reflective layer 13.
The first substrate layer 11 and the second substrate layer 12 are made of silicon, the first substrate layer 11 has a first surface 111 and a second surface 112 opposite and parallel to each other, and the second substrate layer 12 has a third surface 121 and a mounting surface 122 opposite to each other. Wherein, the mounting surface 122 has a preset inclination angle θ with respect to the third surface 121, so that when the light intensity modulation chip 1 is applied to the optical sensor 2, the light of the specified wavelength band transmitted from the filter 22 can be vertically incident to the metal reflective layer 13 of the light intensity modulation chip 1 and vertically reflected, so as to enhance the coupling efficiency of the light of the specified wavelength band. Accordingly, the preset inclination angle θ is an acute angle formed between the light of the specified wavelength band passing through the filter 22 and the central axis of the filter 22.
The first substrate layer 11 is connected with the silicon dioxide layer 10 through the second surface 112, and the second substrate layer 12 and the first substrate layer 11 are respectively arranged on two opposite sides of the silicon dioxide layer 10; the silicon dioxide layer 10 is of annular structure to form a modulation cavity 14 between the first substrate layer 11 and the second substrate layer 12, which is required for light intensity modulation.
The metal reflecting layer 13 is arranged on the first surface 111 of the first substrate layer 11, and the whole surface of the metal reflecting layer 13 is covered on the first substrate layer 11, and the metal reflecting layer 13 is used for outputting light with a specified wave band after receiving incident light; the material of the metal reflecting layer 13 may be aluminum Al, gold Au, silver Ag, etc., and the thickness of the metal reflecting layer 13 is generally 10-1000nm.
In one embodiment, the first substrate layer 11 includes a supporting portion 113 and a floating island portion 114; the supporting portion 113 has a ring-shaped structure, the floating island portion 114 is disposed inside the supporting portion 113, and the floating island portion 114 and the supporting portion 113 are connected by a cantilever structure 115. The modulation cavity 14 is formed between the floating island 114 and the second substrate layer 12, and the cantilever structure 115 plays a role in limiting the floating island 114 on the plane of the first surface 111, so that the effect of the light intensity modulation chip 1 on modulating the light intensity can be effectively improved, and the sensitivity and resolution of the optical sensor 2 to signals to be measured or physical quantities to be measured are enhanced.
In an embodiment, the second substrate layer 12 is provided with a plurality of through holes 123 uniformly distributed in the center, the plurality of through holes 123 extend from the mounting surface 122 to the third surface 121, the plurality of through holes 123 are independent from each other, and central axes of the through holes are parallel to each other, and the central axes are perpendicular to the third surface 121. The structure in which the plurality of independent through holes 123 are densely distributed in the center of the mounting surface 122 of the second base layer 12 can perform a good stopper function in the direction perpendicular to the first surface 111.
In the embodiment of the present application, the light intensity modulation chip 1 may be applied to chips of sensors such as an acceleration sensor chip, a pressure sensor chip, an inclination sensor chip, a strain sensor chip, and the like.
Referring to fig. 4, fig. 4 is a flow chart illustrating a manufacturing method of the light intensity modulation chip 1 according to an embodiment of the disclosure. As shown in fig. 4, the manufacturing method of the light intensity modulation chip 1 includes the following steps.
S110: an SOI wafer is provided comprising a silicon dioxide layer 10 in an intermediate layer, and a first substrate layer 11 and a second substrate layer 12 on opposite sides of the silicon dioxide layer 10.
Referring to fig. 5, fig. 5 is a schematic structural diagram of an SOI wafer according to an embodiment of the present application. As shown in fig. 5, in this step, in order to manufacture the light intensity modulation chip 1 shown in fig. 1 to 3, it is necessary to first provide an SOI wafer including a silicon dioxide layer 10 located in the intermediate layer and silicon layers located on opposite sides of the silicon dioxide layer 10, which are a first base layer 11 and a second base layer 12, respectively.
S120: a plurality of uniformly distributed through holes 123 are formed in a central region of the second base layer 12 by an etching method.
Referring to fig. 6, fig. 6 is a schematic diagram illustrating etching of a through hole 123 in the second substrate layer 12 according to an embodiment of the present application. As shown in fig. 6, in this step, a technician etches the underlying silicon to the silicon dioxide layer 10 by a photolithography, deep silicon etching method, forming a plurality of through holes 123 uniformly distributed in the central region of the second base layer and parallel to the central axis of the wafer.
S130: the first substrate layer 11 is etched by an etching method to form a support portion 113 and a floating island portion 114 connected by a cantilever structure 115.
Referring to fig. 7, fig. 7 is a schematic diagram illustrating etching of the first substrate layer 11 according to an embodiment of the present application. As shown in fig. 7, in this step, the technician also etches the top silicon to the silicon dioxide layer 10 by using a photolithography and deep silicon etching method, and forms a floating island portion 114 and a supporting portion 113 connected by a cantilever structure 115 on the first substrate layer, wherein the supporting portion 113 is in a ring-shaped structure, the floating island portion 114 is located inside the supporting portion 113, and the cantilever structure 115 is located on one side of the floating island portion 114.
In other embodiments of the present application, the cantilever structures 115 may also be disposed on two opposite sides of the floating island 114 to connect the floating island 114 and the supporting portion 113.
S140: a metal reflective layer 13 is formed on the first base layer 11 by an evaporation method.
Referring to fig. 8, fig. 8 is a schematic diagram of an evaporated metal reflective layer 13 according to an embodiment of the present application. As shown in fig. 8, in this step, a technician applies a measure and control sputtering or electron beam evaporation method to evaporate a metal mirror on the first surface 111 of the first substrate layer to form a metal reflecting layer 13 for reflecting light of a specific wavelength band, the material of the metal reflecting layer 13 may be aluminum, gold, silver, etc., and the thickness of the evaporated metal reflecting layer 13 is in the range of 10-1000nm.
S150: the second base layer 12 is etched by an etching method after the SOI wafer is deflected by a preset inclination angle with the exposed surface of the metal reflective layer 13 as a reference base surface to form the mounting surface 122.
Referring to fig. 9, fig. 9 is a schematic diagram illustrating etching of the second substrate layer 12 to form the mounting surface 122 according to an embodiment of the present application. As shown in fig. 9, in this step, the technician etches the second substrate layer 12 using a deep silicon etching apparatus. The technician deflects the device substrate by an angle equal to the predetermined tilt angle, and then etches the underlying silicon to a depth of 1-100um to form a mounting surface 122 having a predetermined tilt angle with respect to the third surface 121 or the metal reflective layer 13 or the first surface 111 or the second surface 112.
S160: the intermediate region of the silicon dioxide layer 10 is removed by a buffer solution to form a modulation cavity 14 between the floating island 114 and the second substrate layer 12.
Referring to fig. 10, fig. 10 is a schematic diagram illustrating a removal of a middle region of a silicon dioxide layer 10 according to an embodiment of the present application. As shown in fig. 10, in this step, the technician removes the middle region of the silicon oxide layer 10 using a BOE buffer or hydrogen fluoride gas to release the movable structure of the optical sensor and the light intensity modulation chip 1 while preserving the underlying silicon (second substrate layer).
When the physical quantity detected by the optical sensor changes, the distance between the floating island 114 and the modulation cavity 14 between the second substrate layers 12 changes, and when the light with a specified wave band is incident to the metal reflection layer 13 through the filter 22, the modulation degrees of the modulation cavities 14 with different distances on the intensity of the incident light are different, and the intensity of the reflected light output after the intensity modulation chip 1 modulates the intensity is related to the physical quantity parameter detected by the sensor.
Referring to fig. 11, fig. 11 is a schematic structural diagram of an optical sensor 2 according to an embodiment of the present application. As shown in fig. 11, the present application provides an optical sensor 2 including a filter 22, a dual-fiber collimator 21, a base 20, and a light intensity modulation chip 1.
The filter 22 is used to screen light of a specified wavelength band and reflect light of other wavelength bands. The light intensity modulation chip 1 is arranged on one side of the filter 22, and the mounting surface 122 of the light intensity modulation chip is parallel to the emergent surface 222 of the filter 22 and is connected with the base 20, namely a preset inclination angle theta is formed between the reflecting surface (namely the metal reflecting layer 13) of the light intensity modulation chip 1 and the emergent surface 222 of the filter 22, so that the metal reflecting layer 13 receives light with vertical incidence and a specified wave band, and the coupling efficiency of the light is improved; the dual-fiber collimator 21 is disposed on the other side of the filter 22, and the dual-fiber collimator 21 is used for outputting light of different wavebands to the filter 22, returning light of a specified waveband, which is subjected to intensity modulation, to the circulator 32, and delivering light of other wavebands to the next sensor.
The dual collimator 21 includes a first optical fiber 211 and a second optical fiber 212, and the dual collimator 21 is used for adjusting divergent light inputted from the optical fibers into parallel light. The incidence plane 221 of the filter 22 is disposed at the beam waist position 210 of the output light of the dual collimator 21, and the incidence plane 221 of the filter 22 is perpendicular to the central axis of the dual collimator 21, and the filter 22 is used for transmitting the light of the specified wavelength band to screen the broadband light.
In an application process, after receiving the broadband light, the first optical fiber 211 of the dual-fiber collimator 21 adjusts the broadband light into parallel output beams and outputs the parallel output beams to the filter 22, where the output beams are parallel to each other and have a certain included angle with the central axis of the dual-fiber collimator 21, and the included angle is a preset inclination angle. The projection bandwidth of the filter 22 is M, i.e., the designated wavelength band of the light screened by the filter 22 in the optical sensor 2 is M. If the bandwidth of the light received by the dual-fiber collimator 21 is N, that is, if the bandwidth of the parallel light output by the dual-fiber collimator 21 is N, the light of the N-M band is reflected by the filter 22, returns to the dual-fiber collimator 21 along the reflected light path, and is output to the next optical sensor 2 via the second optical fiber 212, and the angle between the reflected light path and the incident light path is 2θ. Light in the M wave band (designated wave band) passes through the filter 22, is unchanged along the original light path direction, vertically enters the metal reflecting layer 13 of the light intensity modulation chip 1, the light intensity modulation chip 1 is influenced by the physical quantity factor to be measured, the cantilever beam 115 of the modulation chip is twisted, the light in the M wave band is vertically reflected along the original path after being subjected to light intensity modulation corresponding to the physical quantity parameter to be measured by the metal reflecting layer 13, and returns to the double-fiber collimator 21 after being transmitted through the filter 22 and is output through the first optical fiber 211.
Referring to fig. 12, fig. 12 is a schematic structural diagram of a positioning system 3 according to an embodiment of the present application. As shown in fig. 12, the present application provides a positioning system 3 including a light source 31, a circulator 32, a plurality of optical sensors 2, a beam splitter 33, and a plurality of receivers 34.
All optical sensors 2 are connected in series, the optical sensor 2 located at the end point and directly connected with the circulator 32 is used as a first optical sensor 201, and one optical sensor 2 is used for outputting light with a specified wave band and modulated in intensity; the beam splitter 33 is connected to the first optical sensor 201 through the circulator 32, and the beam splitter 33 is configured to split light in different specified wavelength bands; each receiver 34 is connected to the beam splitter 33, and one receiver 34 is for detecting the intensity of light of one specified wavelength band; the receivers 34 are in one-to-one correspondence with the respective optical sensors 2 for different specified bands.
Each optical sensor 2 has a dual collimator 21, and when the optical sensors 2 are connected in series, the first optical fiber 211 of the first optical sensor 201 is connected to the circulator 32, the second optical fiber 212 of the first optical sensor 201 is connected to the first optical fiber 211 of the second optical sensor 2, the second optical fiber 212 of the second optical sensor 2 is connected to the first optical fiber 211 of the third optical sensor 2, and so on until the second optical fiber 212 of the last optical sensor 2 is left.
The circulator 32 has one input end connected to the light source 31 and two output ends connected to the first optical fiber 211 of the first optical sensor 201 and the other output end connected to the beam splitter 33.
In one application, the light source 31 provides broadband light with a bandwidth N, and the broadband light enters the first optical sensor 201 through the circulator 32. If the transmission band of the filter 22 in the first optical sensor 201 is M, the designated band of the first optical sensor 201 is M, and the light with the band of M is modulated in intensity by the light intensity modulation chip 1 in the first sensor and then is output to the circulator 32 again through the first optical fiber 211.
The light of the remaining wave band N-M is reflected by the filter 22 after entering the first optical sensor 201, and is output to the second optical sensor 2 through the second optical fiber 212 of the first optical sensor 201 and the first optical fiber 211 of the second optical sensor 2; after modulating the light intensity of the corresponding designated wavelength band (for example, the designated wavelength band of the second optical sensor 2 is P), the second optical sensor 2 sends back the light modulated by the light intensity with the designated wavelength band being P through its own first optical fiber 211, and then sends the light modulated by the light intensity back into the first optical sensor 201 through the second optical fiber 212 of the first optical sensor 201, the light with the wavelength band being P is output from the first optical fiber 211 of the first optical sensor 201 to the circulator 32 through the reflection of the filter 22 in the first optical sensor 201, and so on for the rest of the optical sensors 2.
Then, the light of each specified wavelength band, which has been subjected to light intensity modulation, is output to the optical splitter 33 via the second output end of the circulator 32, and the optical splitter 33 splits the light by different wavelength bands and outputs the light of the different wavelength bands to the respective corresponding receivers 34. Generally, one receiver 34 corresponds to one optical sensor 2 for different specified bands. When the intensity of the light coupled by the optical sensor 2 is detected to be obviously changed by a certain receiver 34 based on the received light with the specified wavelength, the position of the optical sensor 2 detecting the change of the physical quantity and the position of the optical sensor can be determined (namely, the positioning function of the positioning system 3 is realized) by matching the specified wave band of the light; and meanwhile, the real-time physical quantity or the change value of the physical quantity can be determined based on the specific parameter value of the light intensity.
In one embodiment, the optical splitter 33 may be an AWG optical splitter (Arrayed Waveguide Grating ), an optical switch, a prism, or the like.
The light intensity modulation chip 1 is firmly assembled through the mounting surface 122 with the preset inclination angle, so that when the sensor detects the physical quantity to be detected, light with a specified wave band can vertically enter the metal reflecting layer 13 and be reflected after light intensity modulation, and the coupling efficiency of the light intensity modulation chip 1 is improved; the detection sensitivity and the detection resolution of the optical sensor 2 are also improved through the cantilever beam structure 115; the buffer solution is injected into the middle area of the silicon dioxide layer 10 through a plurality of independent through holes 123 which are parallel to each other in the center of the second substrate layer 12, so that the floating island 114 is suspended to realize the light intensity modulation function, and the floating island 114 is provided with a limiting function, and the bending or torsion degree of the cantilever structure 115 is prevented from being too large.
According to the positioning system 3 provided by the application, the plurality of sensors are connected in series with the light splitter 33 through the circulator 32, the detection and positioning of the physical quantity to be detected by the plurality of sensors in the positioning system 3 can be realized only by one light source 31, when the physical quantity to be detected changes, the external factors influence the intensity modulation of the light intensity modulation chip 1 in the optical sensor 2 on the light of the appointed wave band, and when the light subjected to the intensity modulation is conveyed to the receiver 34 corresponding to the sensor through the circulator 32 and the light splitter 33, the receiver 34 can detect the light with the light intensity which changes obviously, and then the corresponding optical sensor 2 is determined according to the wave band of the light. Therefore, the positioning system 3 provided by the application realizes the serial connection of the optical sensors 2 and reduces the light source 31 to one, thereby effectively reducing the manufacturing cost and the production cost of the positioning system 3.
The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the same, but rather, various modifications and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.
Claims (9)
1. A light intensity modulation chip, comprising:
a silicon dioxide layer;
a first substrate layer having opposing first and second surfaces, the first substrate layer being connected to the silica layer by the second surface;
the second substrate layer and the first substrate layer are respectively arranged on two opposite sides of the silicon dioxide layer; the silicon dioxide layer is of an annular structure so as to form a modulation cavity between the first substrate layer and the second substrate layer;
the metal reflecting layer is arranged on the first surface and is used for outputting light with a specified wave band after intensity modulation;
the second substrate layer is provided with a third surface and a mounting surface which are opposite, the mounting surface is provided with a preset inclination angle relative to the third surface, and the preset inclination angle is an acute angle formed between the second substrate layer and the central axis of the optical filter plate after the optical filter plate with the specified wave band passes through.
2. The light intensity modulation chip of claim 1, wherein the first substrate layer comprises a support portion and a floating island portion;
the supporting part is of an annular structure, the floating island part is arranged on the inner side of the supporting part, and the floating island part is connected with the supporting part through a cantilever structure.
3. The light intensity modulation chip of claim 1 wherein the second substrate layer is centrally provided with a plurality of evenly distributed through holes extending from the mounting surface to the third surface.
4. A light intensity modulation chip according to claim 3 wherein the central axes of the through holes are parallel to each other and the central axes are perpendicular to the third surface.
5. A method of manufacturing a light intensity modulation chip, comprising:
providing an SOI wafer, wherein the SOI wafer comprises a silicon dioxide layer positioned in an intermediate layer, and a first substrate layer and a second substrate layer positioned on two opposite sides of the silicon dioxide layer; the second substrate layer has a third surface opposite the mounting surface;
etching the first substrate layer by an etching method to form a supporting part and a floating island part which are connected by a cantilever structure;
forming a metal reflecting layer on the first substrate layer by an evaporation method;
taking the exposed surface of the metal reflecting layer as a reference base plane, deflecting the SOI wafer by a preset inclination angle, and etching the second substrate layer by an etching method to form the mounting surface with the preset inclination angle relative to the third surface, wherein the preset inclination angle is equal to the preset inclination angle deflected by the SOI wafer;
removing an intermediate region of the silicon dioxide layer by a buffer solution to form a modulation cavity between the floating island portion and the second substrate layer;
before the removing the intermediate region of the silicon dioxide layer by the buffer solution, the method further comprises: and forming a plurality of uniformly distributed through holes in the central area of the second substrate layer by an etching method.
6. An optical sensor, comprising:
the filter is used for screening light of a specified wave band and reflecting light of other wave bands;
the light intensity modulation chip of any one of claims 1 to 4, wherein the light intensity modulation chip is arranged on one side of the filter, and the mounting surface is parallel to the emergent surface of the filter, so that the metal reflecting layer receives light of the specified wave band which is vertically incident;
the double-fiber collimator is arranged on the other side of the filter plate and is used for returning the light which is subjected to intensity modulation and has the specified wave band.
7. The optical sensor of claim 6, wherein the input surface of the filter is disposed at a beam waist of the output light of the dual collimator, and the input surface is perpendicular to a central axis of the dual collimator.
8. A positioning system, comprising:
a light source;
a plurality of optical sensors as claimed in claim 6 or 7, all of said optical sensors being connected in series and a first optical sensor at an end point being connected to said light source; one of the optical sensors is used for outputting light with a specified wave band and modulated by intensity;
the optical splitter is connected with the first optical sensor and is used for splitting light according to different specified wave bands;
a plurality of receivers, each of said receivers being coupled to said optical splitter, one of said receivers being configured to detect the intensity of light in one of said prescribed wavelength bands; the receivers are in one-to-one correspondence with the optical sensors for different ones of the designated bands.
9. The positioning system of claim 8, wherein the positioning system further comprises:
the circulator is provided with an input end and two output ends, the input end is connected with the light source, one output end is connected with the first optical sensor, and the other output end is connected with the beam splitter.
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| CN202310363579.7A CN116088080B (en) | 2023-04-07 | 2023-04-07 | Light intensity modulation chip, manufacturing method thereof, optical sensor and positioning system |
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| CN202310363579.7A CN116088080B (en) | 2023-04-07 | 2023-04-07 | Light intensity modulation chip, manufacturing method thereof, optical sensor and positioning system |
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| US6942811B2 (en) * | 1999-10-26 | 2005-09-13 | Reflectivity, Inc | Method for achieving improved selectivity in an etching process |
| KR100670225B1 (en) * | 2005-07-26 | 2007-01-17 | 주식회사 피엔에스 | Optical bi-directional transceiver module |
| US9285554B2 (en) * | 2012-02-10 | 2016-03-15 | International Business Machines Corporation | Through-substrate optical coupling to photonics chips |
| CN103197443B (en) * | 2013-04-24 | 2015-09-02 | 中国电子科技集团公司第四十四研究所 | straight waveguide phase modulator |
| JP6417677B2 (en) * | 2014-03-07 | 2018-11-07 | 富士通オプティカルコンポーネンツ株式会社 | Optical module and optical modulator |
| CN108663827A (en) * | 2018-03-29 | 2018-10-16 | 北京航天时代光电科技有限公司 | A kind of lithium niobate electrooptic modulator chip |
| US20230341743A1 (en) * | 2019-09-25 | 2023-10-26 | Shenzhen Hypernano Optics Technology Co., Ltd | Tunable optical filter device |
| CN114843726A (en) * | 2022-06-07 | 2022-08-02 | 欧梯恩智能科技(苏州)有限公司 | Tunable filter and manufacturing method thereof |
| CN115480387A (en) * | 2022-09-26 | 2022-12-16 | 欧梯恩智能科技(苏州)有限公司 | Tunable filter and method for manufacturing tunable filter |
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Effective date of registration: 20240522 Address after: 201900 floor 1, building 1, No. 2816, Yixian Road, Baoshan District, Shanghai Patentee after: Otian Intelligent Technology (Shanghai) Co.,Ltd. Country or region after: China Address before: 215008 building 4, No. 3068, West Ring Road, Gusu District, Suzhou City, Jiangsu Province (except the auditorium) Patentee before: Otion Intelligent Technology (Suzhou) Co.,Ltd. Country or region before: China |