CN116053184A - Micro light emitting diode transfer method and micro light emitting diode panel - Google Patents

Micro light emitting diode transfer method and micro light emitting diode panel Download PDF

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Publication number
CN116053184A
CN116053184A CN202211691543.3A CN202211691543A CN116053184A CN 116053184 A CN116053184 A CN 116053184A CN 202211691543 A CN202211691543 A CN 202211691543A CN 116053184 A CN116053184 A CN 116053184A
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China
Prior art keywords
light emitting
micro light
emitting diode
transfer substrate
array substrate
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张玉秀
温海龙
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TCL Huaxing Photoelectric Technology Co Ltd
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TCL Huaxing Photoelectric Technology Co Ltd
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Priority to CN202211691543.3A priority Critical patent/CN116053184A/en
Publication of CN116053184A publication Critical patent/CN116053184A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Abstract

The application discloses a miniature light emitting diode transfer method and a miniature light emitting diode panel, comprising the following steps: s100, providing a transfer substrate and an array substrate, wherein a plurality of micro light emitting diodes are arranged on the transfer substrate, the micro light emitting diodes comprise a plurality of pins, the transfer substrate comprises a plurality of first alignment members, and the array substrate comprises a plurality of bonding pads and a plurality of second alignment members; s200, setting solder on a plurality of pins or a plurality of bonding pads; s300, arranging the transfer substrate and the array substrate oppositely and mutually approaching, firstly matching the first alignment member with the corresponding second alignment member to align the transfer substrate and the array substrate, and then connecting the pins with the corresponding bonding pads through solder; s400, solidifying the solder and separating the micro light emitting diode from the transfer substrate. According to the transfer substrate alignment device, the first alignment member and the corresponding second alignment member are aligned in a matching manner, so that the transfer substrate and the array substrate are aligned, and the yield of mass transfer is improved.

Description

Micro light emitting diode transfer method and micro light emitting diode panel
Technical Field
The present disclosure relates to the field of display, and in particular, to a micro light emitting diode transfer method and a micro light emitting diode panel.
Background
Each large panel factory is actively developing a micro light emitting diode panel (MinLED panel or micro led panel), which is expected to be a core technology of the next-generation display panel.
However, in the manufacturing process of a micro light emitting diode (MinLED or micro LED) panel, there are a number of problems, among which mass transfer is one of the problems, and alignment of a transfer substrate and an array substrate during the transfer process of the micro light emitting diode is an important influencing factor causing a reduction in mass transfer yield.
Disclosure of Invention
The embodiment of the application provides a micro light emitting diode transfer method and a micro light emitting diode panel, which can solve the problems of difficult alignment of a transfer substrate and an array substrate and reduced mass transfer yield in the mass transfer process of micro light emitting diodes.
The embodiment of the application provides a micro light emitting diode transfer method, which comprises the following steps:
s100, providing a transfer substrate and an array substrate, wherein a plurality of micro light emitting diodes are arranged on the transfer substrate, the micro light emitting diodes comprise a plurality of pins, the transfer substrate comprises a plurality of first alignment members, and the array substrate comprises a plurality of bonding pads and a plurality of second alignment members;
s200, setting solder on a plurality of pins or a plurality of bonding pads;
s300, arranging the transfer substrate and the array substrate oppositely and approaching each other, firstly matching the first alignment member with the corresponding second alignment member to align the transfer substrate and the array substrate, and then connecting the pins with the corresponding bonding pads through the solder;
s400, solidifying the solder and separating the micro light emitting diode from the transfer substrate.
Optionally, in some embodiments of the present application, in the S100, one of the first alignment member and the second alignment member is a protrusion, and the other is a recess;
in S300, the protrusion is matched to the size of the recess and the protrusion may be accommodated in the recess.
Optionally, in some embodiments of the present application, in the S100, a height of the protrusion is greater than a height of the micro light emitting diode.
Optionally, in some embodiments of the present application, in S300, at least a portion of the second alignment members are disposed between adjacent micro light emitting diodes.
Optionally, in some embodiments of the present application, the first alignment member is concave and the second alignment member is convex.
Alternatively, in some embodiments of the present application, a cross section of the protrusion in a thickness direction of the array substrate is any one of a trapezoid, a triangle arc, and a U-shape.
Optionally, in some embodiments of the present application, in the S100, a plurality of the micro light emitting diodes on the transfer substrate are transferred from a wafer.
Optionally, in some embodiments of the present application, the transfer substrate includes a transfer substrate, and an adhesive film layer attached to the transfer substrate, and the plurality of micro light emitting diodes are adhered to the adhesive film layer.
Correspondingly, the embodiment of the application also provides a micro light emitting diode panel, which comprises:
an array substrate including a plurality of second alignment members;
the micro light emitting diodes are arranged on the array substrate;
the second alignment member is used for performing alignment between the transfer substrate and the array substrate in the micro light emitting diode transfer process, and the micro light emitting diode of the micro light emitting diode panel is transferred from the transfer substrate.
Optionally, in some embodiments of the present application, the second alignment member is a protrusion or a depression
The application provides a micro light emitting diode transfer method and a micro light emitting diode panel, wherein the micro light emitting diode transfer method comprises the following steps: s100, providing a transfer substrate and an array substrate, wherein a plurality of micro light emitting diodes are arranged on the transfer substrate, the micro light emitting diodes comprise a plurality of pins, the transfer substrate comprises a plurality of first alignment members, and the array substrate comprises a plurality of bonding pads and a plurality of second alignment members; s200, setting solder on a plurality of pins or a plurality of bonding pads; s300, arranging the transfer substrate and the array substrate oppositely and mutually approaching, firstly matching the first alignment member with the corresponding second alignment member to align the transfer substrate and the array substrate, and then connecting the pins with the corresponding bonding pads through solder; s400, solidifying the solder and separating the micro light emitting diode from the transfer substrate. According to the micro LED array substrate alignment device, the first alignment member is arranged on the transfer substrate, the second alignment member is arranged on the array substrate, when the micro LED is transferred onto the array substrate from the transfer substrate, the first alignment member is aligned with the corresponding second alignment member in a matching manner so that the transfer substrate is aligned with the array substrate, then the pins are connected with the corresponding bonding pads through the solder, therefore, the first alignment member is aligned with the corresponding second alignment member in a matching manner, the connection failure of the pins and the corresponding bonding pads is avoided, the alignment of the transfer substrate and the array substrate is accurate, and the yield of mass transfer is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a micro led transferring method according to an embodiment of the present application;
FIG. 2 is a schematic cross-sectional view of a first transfer substrate according to an embodiment of the present disclosure;
fig. 3 is a schematic cross-sectional view of a first array substrate according to an embodiment of the disclosure;
FIG. 4 is a schematic cross-sectional view of a second transfer substrate according to an embodiment of the present disclosure;
FIG. 5 is a schematic cross-sectional view of a second array substrate according to an embodiment of the present disclosure;
FIG. 6 is a schematic diagram illustrating a first alignment process of a transfer substrate and an array substrate according to an embodiment of the present disclosure;
FIG. 7 is a schematic diagram illustrating a second alignment process of a transfer substrate and an array substrate according to an embodiment of the present disclosure;
fig. 8 is a schematic diagram of a first transfer substrate and a micro led according to an embodiment of the present disclosure after separation;
fig. 9 is a schematic diagram of a first micro led panel according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application. Furthermore, it should be understood that the detailed description is presented herein for purposes of illustration and explanation only and is not intended to limit the present application. In this application, unless otherwise indicated, terms of orientation such as "upper" and "lower" are used to generally refer to the upper and lower positions of the device in actual use or operation, and specifically the orientation of the drawing figures; while "inner" and "outer" are for the outline of the device.
The embodiment of the application provides a micro light emitting diode transfer method, which comprises the following steps: s100, providing a transfer substrate and an array substrate, wherein a plurality of micro light emitting diodes are arranged on the transfer substrate, the micro light emitting diodes comprise a plurality of pins, the transfer substrate comprises a plurality of first alignment members, and the array substrate comprises a plurality of bonding pads and a plurality of second alignment members; s200, setting solder on a plurality of pins or a plurality of bonding pads; s300, arranging the transfer substrate and the array substrate oppositely and mutually approaching, firstly matching the first alignment member with the corresponding second alignment member to align the transfer substrate and the array substrate, and then connecting the pins with the corresponding bonding pads through solder; s400, solidifying the solder and separating the micro light emitting diode from the transfer substrate.
The embodiment of the application also provides a micro light-emitting diode panel manufactured by adopting the micro light-emitting diode transfer method. The following will describe in detail. The following description of the embodiments is not intended to limit the preferred embodiments.
Example 1
Referring to fig. 1 to 9, fig. 1 is a schematic flow chart of a micro light emitting diode transferring method according to a first embodiment of the present application; FIG. 2 is a schematic cross-sectional view of a first transfer substrate according to an embodiment of the present disclosure; fig. 3 is a schematic cross-sectional view of a first array substrate according to an embodiment of the disclosure; FIG. 4 is a schematic cross-sectional view of a second transfer substrate according to an embodiment of the present disclosure; FIG. 5 is a schematic cross-sectional view of a second array substrate according to an embodiment of the present disclosure; FIG. 6 is a schematic diagram illustrating a first alignment process of a transfer substrate and an array substrate according to an embodiment of the present disclosure; FIG. 7 is a schematic diagram illustrating a second alignment process of a transfer substrate and an array substrate according to an embodiment of the present disclosure; fig. 8 is a schematic diagram of a first transfer substrate and a micro light emitting diode according to an embodiment of the present application after separation, and fig. 9 is a schematic diagram of a first micro light emitting diode panel according to an embodiment of the present application. Fig. 2, fig. 3, fig. 6, fig. 8 and fig. 9 are schematic views illustrating a manufacturing process of the same micro light emitting diode panel or a process of the same micro light emitting diode transferring method; fig. 4, 5 and 7 are schematic views illustrating a manufacturing process of the same micro led panel or a process of the same micro led transfer method.
The embodiment of the application provides a micro light emitting diode transfer method, which comprises the following steps: s100, S200, S300, S400. The steps of S100, S200, S300, S400 may be adjusted, and other steps may be further included before S100, and other steps may be further included after S400.
S100, a transfer substrate and an array substrate are provided, a plurality of micro light emitting diodes are arranged on the transfer substrate, the micro light emitting diodes comprise a plurality of pins, the transfer substrate comprises a plurality of first alignment members, and the array substrate comprises a plurality of bonding pads and a plurality of second alignment members.
Specifically, as shown in fig. 2 and 3, a transfer substrate 20 and an array substrate 10 are provided, a plurality of micro light emitting diodes 30 are disposed on the transfer substrate 20, the plurality of micro light emitting diodes 30 include a plurality of pins 32, the transfer substrate 20 includes a plurality of first alignment members 101, and the array substrate 10 includes a plurality of pads and a plurality of second alignment members 102.
Specifically, or as shown in fig. 4 and 5, a transfer substrate 20 and an array substrate 10 are provided, a plurality of micro light emitting diodes 30 are disposed on the transfer substrate 20, the plurality of micro light emitting diodes 30 include a plurality of pins 32, the transfer substrate 20 includes a plurality of first alignment members 101, and the array substrate 10 includes a plurality of bonding pads and a plurality of second alignment members 102.
Specifically, the micro light emitting diode 30 may include a light emitting element body 31 and a pin 32 connected to the light emitting element body 31, one micro light emitting diode 30 may include two pins 32, and the two pins 32 of one micro light emitting diode may be a first anode and a first cathode, or a first anode and a first cathode, respectively.
Specifically, the array substrate 10 includes an array substrate 11, an array functional layer 12 disposed on the array substrate 11, and a plurality of pads 13 disposed on the array functional layer 12, wherein the plurality of pads 13 may include a plurality of pad pairs, one pad pair includes a second anode and a second cathode, or a second anode and a second cathode, the array functional layer 12 is configured to drive the micro light emitting diode 30 to emit light, and the array functional layer 12 may include a plurality of thin film transistors and circuits.
Specifically, the array substrate 11 may be made of glass, plastic, polyimide, etc., and the array substrate 10 may be a glass-based array substrate, a PCB board, a flexible substrate array substrate, etc.
Specifically, during the transfer, the array substrate 10 may be set on the array substrate stage 41 (auxiliary substrate or stage of machine, etc.), and the transfer substrate 20 may be set on the transfer substrate stage 42 (auxiliary transfer substrate or stage of machine, etc.).
S200, solder is provided on the plurality of pins or the plurality of pads.
Specifically, or as shown in fig. 6 or 7, solder 40 is provided on the plurality of pins 32 or the plurality of pads 13.
Specifically, the solder 40 may be an existing soldering or connecting material such as solder paste. The solder 40 may be provided on the plurality of pins 32 or the plurality of pads 13 by screen printing or the like. Fig. 6 and 7 illustrate solder 40 disposed on the plurality of pads 13.
S300, arranging the transfer substrate and the array substrate opposite to each other and approaching to each other, firstly matching the first alignment member with the corresponding second alignment member to align the transfer substrate and the array substrate, and then connecting the pins with the corresponding bonding pads through solder.
Specifically, as shown in fig. 6, the transfer substrate 20 and the array substrate 10 are disposed opposite to and close to each other, first the first alignment members 101 are mated with the corresponding second alignment members 102 so that the transfer substrate 20 is aligned with the array substrate 10, and then the leads 32 are connected with the corresponding pads 13 by the solder 40.
Specifically, or as shown in fig. 7, the transfer substrate 20 and the array substrate 10 are disposed opposite to and close to each other, first the first alignment members 101 are mated with the corresponding second alignment members 102 so that the transfer substrate 20 is aligned with the array substrate 10, and then the leads 32 are connected with the corresponding pads 13 by the solder 40.
Specifically, in the micro led transferring process, the transferring substrate 20 and the array substrate 10 are oppositely disposed and are close to each other, the first alignment member 101 aligns with the corresponding second alignment member, so that the transferring substrate 20 aligns with the array substrate 10, then the pins 32 align with the corresponding bonding pads 13, for example, a first anode aligns with the corresponding second anode, a second cathode aligns with the corresponding second cathode, and then the pins 32 are connected with the corresponding bonding pads 13 through the solder 40, so that the first alignment member 101 and the corresponding second alignment member 102 are aligned in a matching manner, and the connection failure of the pins 32 and the corresponding bonding pads 13 is avoided, thereby ensuring that the alignment of the transferring substrate 20 and the array substrate 10 is accurate, avoiding the problems of connection errors, connection offsets, connection shorts and the like of the pins 32 and the corresponding bonding pads 13, and improving the yield of mass transfer.
S400, solidifying the solder and separating the micro light emitting diode from the transfer substrate.
Specifically, as shown in fig. 8, the solder 40 is cured and the micro light emitting diode 30 is separated from the transfer substrate 20.
Specifically, the solder 40 may be cured by a curing method corresponding to the solder 40 by a method such as thermal curing, ultraviolet curing, and laser curing, so that the connection between the leads 32 and the corresponding pads 13 is stable and fixed.
Specifically, further, as shown in fig. 9, the array substrate stage 41 is separated from the array substrate 10.
Example two
The present embodiment is the same as or similar to the implementation, except that some detailed procedures of the micro led transfer method are further described, and only the differences are described herein, and the same points are not repeated.
In some embodiments, in S100, one of the first alignment member 101 and the second alignment member 102 is a protrusion T1, and the other is a recess A1; in S300, the protrusion T1 is matched with the size of the recess A1 and the protrusion T1 may be accommodated in the recess A1.
Specifically, fig. 2, 3, 6, 8, and 9 illustrate that the first alignment member 101 is a recess A1, and the second alignment member 102 is a protrusion T1; fig. 4, 5 and 7 illustrate that the first alignment member 101 is a protrusion T1 and the second alignment member 102 is a recess A1.
Specifically, the sizes of the protrusions T1 and the recesses A1 are matched, the protrusions T1 can be accommodated in the recesses A1, and in the alignment process of the transfer substrate 20 and the array substrate 10, the first alignment member 101 and the second alignment member 102 are aligned first, and the protrusions T1 are inserted or accommodated in the corresponding recesses A1, so that the dislocation of the transfer substrate 20 and the array substrate 10 is avoided, and the alignment accuracy is improved.
In some embodiments, in S100, the height of the protrusion T1 is greater than the height of the micro light emitting diode 30.
Specifically, when the first alignment member 101 is the protrusion T1, before the transfer is completed, the height of the protrusion T1 is greater than the height of the micro light emitting diode 30, and the protrusion T1 protrudes on the transfer substrate 20 relative to the micro light emitting diode 30, so as to ensure that the first alignment member 101 is aligned with the second alignment member 102 in the process of aligning the transfer substrate 20 with the array substrate 10.
Specifically, when the second alignment member 102 is the protrusion T1, after the transfer is completed, the height of the protrusion T1 is greater than the height of the micro light emitting diode 30, and the protrusion T1 protrudes on the array substrate 10 relative to the micro light emitting diode 30, for example, in fig. 8, the first height h1 of the protrusion T1 is greater than the second height h2 of the micro light emitting diode 30, so as to ensure that the first alignment member 101 is aligned with the second alignment member 102 in the alignment process of the transfer substrate 20 and the array substrate 10.
In some embodiments, in S300, at least a portion of the second alignment members 102 are disposed between adjacent micro leds 30.
Specifically, in the array substrate 10, one bonding pad pair corresponds to one micro light emitting diode 30, and at least part of the second alignment members 102 are disposed between adjacent bonding pad pairs.
Specifically, after the micro light emitting diode is transferred, at least part of the second alignment members 102 are disposed between the adjacent micro light emitting diodes 30, so that it is ensured that the transfer substrate 20 and the array substrate 10 are aligned accurately at each position even if the transfer substrate 20 and the array substrate 10 are slightly deformed or warped.
In some embodiments, the first alignment member 101 is a recess A1 and the second alignment member 102 is a protrusion T1.
Specifically, in a preferred embodiment, the first alignment member 101 is a recess A1, and the second alignment member 102 is a protrusion T1, so as to avoid the first alignment member 101 from pressing the solder 40, the pad 13, etc. on the array substrate 10 during the alignment process due to the protrusion T1.
In some embodiments, the cross section of the protrusion T1 in the thickness direction of the array substrate 10 is any one of a trapezoid, a triangle arc, and a U-shape.
Specifically, the cross section of the protrusion T1 in the thickness direction of the array substrate 10 is any one of trapezoid, triangle arc and U-shape, the top dimension of the protrusion T1 is smaller than the bottom dimension of the protrusion T1, the shape and dimension of the recess A1 are matched with the protrusion T1, the dimension of the top of the recess A1 is larger than the bottom dimension, even if the top of the protrusion T1 and the top of the recess A1 are slightly misplaced in the alignment process of the transfer substrate 20 and the array substrate 10, the top of the protrusion T1 is not aligned with the center of the recess A1, as long as the top of the protrusion T1 is located in the recess A1, the protrusion T1 can gradually slide into the corresponding recess A1 in the mutual approaching process of the transfer substrate 20 and the array substrate 10, and alignment accuracy and precision are improved.
In some embodiments, in S100, the plurality of micro light emitting diodes 30 on the transfer substrate 20 are transferred from the wafer.
Specifically, the micro light emitting diode 30 on the wafer is transferred to the transfer substrate 20 and then transferred to the array substrate 10.
In some embodiments, the transfer substrate 20 includes a transfer substrate 21, and an adhesive film layer 22 attached to the transfer substrate 21, and the plurality of micro light emitting diodes 30 are adhered to the adhesive film layer 22.
Example III
Please refer to fig. 9.
The present embodiment provides a micro light emitting diode panel that may be manufactured using the micro light emitting diode transfer method of any of the above embodiments. The micro light emitting diode panel of the present embodiment may include the array substrate 10 and any feature of the micro light emitting diodes 30 on the array substrate 10 described in the above embodiments, and will not be described herein.
The present embodiment provides a micro light emitting diode panel 300, the micro light emitting diode panel 300 includes an array substrate 10 and a plurality of micro light emitting diodes 30, the array substrate 10 includes a plurality of second alignment members 102; a plurality of micro light emitting diodes 30 are disposed on the array substrate 10; the second alignment member 102 is used for aligning the transfer substrate 20 and the array substrate 10 in the micro led transfer process, and the micro leds 30 of the micro led panel 300 are transferred from the transfer substrate 20.
In some embodiments, the second alignment member 102 is a protrusion T1 or a depression A1.
It should be noted that the micro led panel 300 may be used as a backlight source of a liquid crystal display panel; the micro led panel 300 may also display an image directly, and the micro led 30 may be used as a sub-pixel.
The foregoing has described in detail a micro led transfer method and a micro led panel provided by the embodiments of the present application, and specific examples have been applied herein to illustrate the principles and embodiments of the present application, where the foregoing examples are only for aiding in understanding the method and core idea of the present application; meanwhile, those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, and the present description should not be construed as limiting the present application in view of the above.

Claims (10)

1. The micro light-emitting diode transferring method is characterized by comprising the following steps:
s100, providing a transfer substrate and an array substrate, wherein a plurality of micro light emitting diodes are arranged on the transfer substrate, the micro light emitting diodes comprise a plurality of pins, the transfer substrate comprises a plurality of first alignment members, and the array substrate comprises a plurality of bonding pads and a plurality of second alignment members;
s200, setting solder on a plurality of pins or a plurality of bonding pads;
s300, arranging the transfer substrate and the array substrate oppositely and approaching each other, firstly matching the first alignment member with the corresponding second alignment member to align the transfer substrate and the array substrate, and then connecting the pins with the corresponding bonding pads through the solder;
s400, solidifying the solder and separating the micro light emitting diode from the transfer substrate.
2. The method of claim 1, wherein in S100, one of the first alignment member and the second alignment member is a protrusion and the other is a recess;
in S300, the protrusion is matched to the size of the recess and the protrusion may be accommodated in the recess.
3. The method of transferring a micro light emitting diode as set forth in claim 2, wherein in S100, a height of the protrusion is greater than a height of the micro light emitting diode.
4. The method of claim 2, wherein in S300, at least a portion of the second alignment members are disposed between adjacent micro leds.
5. The method of any one of claims 1 to 4, wherein the first alignment member is concave and the second alignment member is convex.
6. The method of claim 2, wherein the cross section of the protrusion in the thickness direction of the array substrate is any one of a trapezoid, a triangle arc, and a U-shape.
7. The method according to claim 1, wherein in S100, the plurality of micro light emitting diodes on the transfer substrate are transferred from a wafer.
8. The method of claim 1, wherein the transfer substrate comprises a transfer substrate and an adhesive film layer attached to the transfer substrate, and a plurality of the micro light emitting diodes are adhered to the adhesive film layer.
9. A miniature light emitting diode panel comprising:
an array substrate including a plurality of second alignment members;
the micro light emitting diodes are arranged on the array substrate;
the second alignment member is used for performing alignment between the transfer substrate and the array substrate in the micro light emitting diode transfer process, and the micro light emitting diode of the micro light emitting diode panel is transferred from the transfer substrate.
10. The micro light emitting diode panel as claimed in claim 9, wherein the second alignment member is a protrusion or a depression.
CN202211691543.3A 2022-12-27 2022-12-27 Micro light emitting diode transfer method and micro light emitting diode panel Pending CN116053184A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211691543.3A CN116053184A (en) 2022-12-27 2022-12-27 Micro light emitting diode transfer method and micro light emitting diode panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211691543.3A CN116053184A (en) 2022-12-27 2022-12-27 Micro light emitting diode transfer method and micro light emitting diode panel

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Publication Number Publication Date
CN116053184A true CN116053184A (en) 2023-05-02

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