CN116031141A - Workpiece processing method, workpiece processing apparatus and semiconductor device - Google Patents
Workpiece processing method, workpiece processing apparatus and semiconductor device Download PDFInfo
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Abstract
The disclosure provides a workpiece processing method, workpiece processing equipment and a semiconductor device, and relates to the technical field of semiconductor manufacturing. The workpiece processing method comprises the following steps: placing a target workpiece on a support in the chamber, the target workpiece having a silicon oxide layer formed thereon; generating one or more plasmas using a process gas comprising nitrogen to obtain a mixture; the mixture at least comprises charged particles; during the nitridation reaction, utilizing a faraday shield layer disposed in the chamber to provide the charged particles with a first energy within a predetermined range; the target workpiece is exposed to a mixture of charged particles having a first energy to form a silicon oxynitride layer in at least a partial region of the silicon oxide layer. The workpiece processing method, the workpiece processing equipment and the semiconductor device provided by the embodiment of the disclosure can meet the requirement of the advanced process.
Description
Technical Field
The present disclosure relates to the field of semiconductor manufacturing technologies, and in particular, to a workpiece processing method, a workpiece processing apparatus, and a semiconductor device.
Background
With the continuous iteration of semiconductor manufacturing technology, in order to maintain good gate control capability, a dielectric layer (typically, a silicon oxide layer) under a gate may be doped with nitrogen element, so that the semiconductor device can maintain good gate control capability by increasing the dielectric constant of the dielectric layer. However, the thickness of the dielectric layer is also continuously reduced, so that the doped nitrogen element easily penetrates the dielectric layer, which may adversely reduce the performance of the semiconductor device. Therefore, how to control the doping depth of nitrogen in the dielectric layer to meet the requirement of the advanced process is important.
Disclosure of Invention
The present disclosure provides a workpiece processing method, a workpiece processing apparatus, and a semiconductor device.
According to a first aspect of the present disclosure, there is provided a workpiece processing method comprising:
placing a target workpiece on a support in the chamber, the target workpiece having a silicon oxide layer formed thereon;
generating one or more plasmas using a process gas comprising nitrogen to obtain a mixture; the mixture at least comprises charged particles;
during the nitridation reaction, utilizing a faraday shield layer disposed in the chamber to provide the charged particles with a first energy within a predetermined range;
The target workpiece is exposed to a mixture of charged particles having a first energy to form a silicon oxynitride layer in at least a partial region of the silicon oxide layer.
In some alternative embodiments, the first energy is less than the second energy, which is the energy of charged particles in the resulting mixture without a faraday shield in the chamber.
In some alternative embodiments, the density of charged particles having a first energy is less than the density of charged particles having a second energy.
In some alternative embodiments, after the nitridation reaction is completed, the silicon oxynitride layer is formed to have a nitrogen doping depth of the first depth; the first depth is smaller than the second depth, and the second depth is the doping depth of the formed silicon oxynitride layer after the nitridation reaction is completed under the condition that the chamber is not provided with the Faraday shielding layer.
In some alternative embodiments, the first gas content corresponding to the first depth is a first content and the second gas content corresponding to the second depth is a second content; the difference between the first content and the second content is smaller than a preset threshold, the first content is the total content of nitrogen injected into the chamber under the condition that the Faraday shielding layer is arranged on the chamber, and the second content is the total content of nitrogen injected into the chamber under the condition that the Faraday shielding layer is not arranged on the chamber.
In some alternative embodiments, further comprising:
the first depth is reduced from a first value to a second value with the faraday shield adjusted from the first structural feature to the second structural feature; the first radio frequency passing rate corresponding to the first structural feature is smaller than the second radio frequency passing rate corresponding to the second structural feature.
In some alternative embodiments, the first depth ranges from about 3 angstroms to about 10 angstroms.
In some alternative embodiments, the process gas further comprises an inert gas.
In some alternative embodiments, the inert gas comprises argon and/or helium.
In some alternative embodiments, the process gas comprises the following components in the volume ratio:
nitrogen gas: about 60% to about 80%;
inert gas: about 20% to about 40%.
In some alternative embodiments, the processing parameters of the chamber include one or more of the following:
pressure: about 5 mtorr to about 40 mtorr;
radio frequency source power: about 1400 watts to about 2200 watts;
temperature: about 30 degrees celsius to about 50 degrees celsius;
flow rate of process gas: about 50 standard cubic centimeters per minute to about 400 standard cubic centimeters per minute;
workpiece processing time: about 60 seconds to about 180 seconds.
According to a second aspect of the present disclosure, there is provided a workpiece processing apparatus comprising:
a plasma chamber for receiving a process gas;
a processing chamber provided with a support for supporting a target workpiece on which a silicon oxide layer is formed;
an inductive element for inducing the generation of a plasma in the plasma chamber;
a bias source for providing a radio frequency power supply to the inductive element;
a controller for controlling the bias source and the sensing element to perform a workpiece processing process, the workpiece processing process comprising the operations of:
providing radio frequency energy to the inductive element by controlling the bias source to generate one or more plasmas using a process gas comprising nitrogen to obtain a mixture; the mixture at least comprises charged particles;
during the nitridation reaction, utilizing a faraday shield layer disposed in the plasma chamber to provide charged particles with a first energy within a predetermined range;
the target workpiece is exposed to a mixture of charged particles having a first energy to form a silicon oxynitride layer in at least a partial region of the silicon oxide layer.
In some alternative embodiments, the plasma chamber and the processing chamber are the same chamber.
In some alternative embodiments, the first energy is less than the second energy, which is the energy of charged particles in the resulting mixture without a faraday shield in the plasma chamber.
In some alternative embodiments, the density of charged particles having a first energy is less than the density of charged particles having a second energy.
In some alternative embodiments, after the nitridation reaction is completed, the silicon oxynitride layer is formed to have a nitrogen doping depth of the first depth; the first depth is smaller than the second depth, and the second depth is the doping depth of the formed silicon oxynitride layer after the nitridation reaction is completed under the condition that the plasma chamber is not provided with the Faraday shielding layer.
In some alternative embodiments, the first gas content corresponding to the first depth is a first content and the second gas content corresponding to the second depth is a second content; the difference between the first content and the second content is smaller than a preset threshold, the first content is the total content of nitrogen injected into the plasma chamber when the Faraday shielding layer is arranged on the plasma chamber, and the second content is the total content of nitrogen injected into the plasma chamber when the Faraday shielding layer is not arranged on the plasma chamber.
In some alternative embodiments, the workpiece handling process further comprises:
the first depth is reduced from a first value to a second value with the faraday shield adjusted from the first structural feature to the second structural feature; the first radio frequency passing rate corresponding to the first structural feature is smaller than the second radio frequency passing rate corresponding to the second structural feature.
In some alternative embodiments, the first depth ranges from about 3 angstroms to about 10 angstroms.
In some alternative embodiments, the process gas further comprises an inert gas.
In some alternative embodiments, the inert gas comprises argon and/or helium.
In some alternative embodiments, the process gas comprises the following components in the volume ratio:
nitrogen gas: about 60% to about 80%;
inert gas: about 20% to about 40%.
In some alternative embodiments, the processing parameters of the chamber include one or more of the following:
pressure: about 5 mtorr to about 40 mtorr;
radio frequency source power: about 1400 watts to about 2200 watts;
temperature: about 30 degrees celsius to about 50 degrees celsius;
flow rate of process gas: about 50 standard cubic centimeters per minute to about 400 standard cubic centimeters per minute;
workpiece processing time: about 60 seconds to about 180 seconds.
According to a third aspect of the present disclosure, there is provided a semiconductor device comprising a target workpiece obtained by the method provided in the first aspect, the target workpiece comprising a silicon oxide layer thereon, and a silicon oxynitride layer formed in at least a partial region of the silicon oxide layer, the silicon oxide layer having a nitrogen doping depth in the range of about 3 angstroms to about 10 angstroms.
According to the technical scheme provided by the disclosure, a target workpiece can be placed on a support piece in a cavity, and a silicon oxide layer is formed on the target workpiece; generating one or more plasmas using a process gas comprising nitrogen to obtain a mixture; the mixture at least comprises charged particles; during the nitridation reaction, utilizing a faraday shield layer disposed in the chamber to provide the charged particles with a first energy within a predetermined range; the target workpiece is exposed to a mixture of charged particles having a first energy to form a silicon oxynitride layer in at least a partial region of the silicon oxide layer. In the process of nitriding reaction, the charged particles have the first energy within the preset range by utilizing the Faraday shielding layer arranged in the chamber, so that in the process of exposing the target workpiece to the mixture containing the charged particles with the first energy so as to form the silicon oxynitride layer in at least partial area of the silicon oxide layer, the charged particles have the first energy lower, the nitrogen doping depth of the silicon oxynitride layer can be effectively reduced, and the requirement of the advanced process is met.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the disclosure, nor is it intended to be used to limit the scope of the disclosure. Other features of the present disclosure will become apparent from the following specification.
Drawings
The drawings are for a better understanding of the present solution and are not to be construed as limiting the present disclosure. Wherein:
FIG. 1 is a schematic illustration of the implementation of a multi-layer passivation scheme provided in the prior art;
FIG. 2 is a schematic flow chart of a method for processing a workpiece according to an embodiment of the disclosure;
fig. 3A is a schematic structural diagram of a faraday shield at a first viewing angle according to an embodiment of the present disclosure;
fig. 3B is a schematic structural diagram of a faraday shield at a second viewing angle according to an embodiment of the present disclosure;
fig. 4 is a schematic diagram of an arrangement manner of a faraday shielding layer according to an embodiment of the present disclosure;
FIG. 5 is a schematic illustration of a workpiece handling process provided in an embodiment of the present disclosure;
FIG. 6 is a schematic diagram of a comparison of a first depth and a second depth provided by embodiments of the present disclosure;
fig. 7 is a cross-sectional view of a workpiece process provided in accordance with an embodiment of the present disclosure.
Detailed Description
Exemplary embodiments of the present disclosure are described below in conjunction with the accompanying drawings, which include various details of the embodiments of the present disclosure to facilitate understanding, and should be considered as merely exemplary. Accordingly, one of ordinary skill in the art will recognize that various changes and modifications of the embodiments described herein can be made without departing from the scope and spirit of the present disclosure. Also, descriptions of well-known functions and constructions are omitted in the following description for clarity and conciseness.
With the continued iteration of semiconductor fabrication techniques, ever thinner gate dielectric layers have failed to meet the demands for gate control capability.
To solve the above problems, a silicon oxide (SiO) layer as a dielectric layer under the target workpiece gate electrode 2 ) Nitriding the layer to form a layer of SiO 2 A silicon oxynitride (SiOxNy) layer is formed in at least a portion of the region of the layer to increase its dielectric constant to improve the gate control capability of the semiconductor device including the target workpiece to some extent to improve the performance of the semiconductor device.
Referring to fig. 1, an exemplary target workpiece 101 may be placed on a support 102 in a chamber, with a Si substrate 1011 of the target workpiece 101 having SiO formed thereon 2 Layer 1012. One or more plasmas are then generated using a process gas that includes nitrogen to produce a mixture 103, the mixture 103 including charged particles 1031 and radicals 1032. Finally, the target workpiece 101 is exposed to the mixture 103 to provide a reaction mixture for SiO 2 Layer 1012 is nitrided to form a layer of SiO 2 At least a portion of layer 1012 has formed therein a SiOxNy layer 1013.
However, the inventors have found that for SiO 2 Layer 1012 is nitrided to form a layer of SiO 2 During the formation of the SiOxNy layer 1013 in at least part of the area of layer 1012, since the mixture 103 contains a larger proportion of the charged particles 1031, the charged particles 1031 have a higher energy, which increases the doping depth L1 of the SiOxNy layer 1013 (penetration depth of the nitrogen element 1014 in the SiOxNy layer 1013 when the concentration of the nitrogen element 1014 in the SiOxNy layer 1013 is at a maximum). Since the dielectric layer of the prior art is generally thinner, the deeper doping depth tends to allow the N element to penetrate the dielectric layer and enter the underlying silicon region, which in turn reduces the performance of the semiconductor device. Therefore, the N element doped in the dielectric layer is required to have a sufficient concentration in advance of Cheng Jiyao, and the doping depth of the N element is required to be as low as possible.
To solve the above-described problems, the embodiments of the present disclosure provide a workpiece processing method that can be applied to a workpiece processing apparatus. A workpiece processing method according to an embodiment of the present disclosure will be described below with reference to a flowchart shown in fig. 2. It should be noted that although a logical order is illustrated in the flowchart, in some cases, the steps illustrated or described may be performed in other orders.
Step S201, placing a target workpiece on a support in the chamber, the target workpiece having SiO formed thereon 2 A layer.
In embodiments of the present disclosure, the target workpiece may include a Si substrate, and a multilayer structure formed on the Si substrate, the multilayer structure including SiO therein 2 A layer.
In addition, in the embodiments of the present disclosure, the chamber may be a processing chamber, or a chamber having both a processing chamber and a plasma chamber. That is, in practical applications, the workpiece processing method provided by the embodiments of the present disclosure is applicable to a workpiece processing apparatus in which a processing chamber and a plasma chamber are separated, and in this case, a support is disposed in the processing chamber; likewise, the workpiece processing method provided by the embodiment of the disclosure is also applicable to workpiece equipment in which the plasma chamber and the processing chamber belong to the same chamber. In a specific example, the workpiece processing apparatus may be a plasma etcher.
It should be further noted that, in the embodiment of the present disclosure, the target workpiece may be a semiconductor device, or may be other devices. In a specific example, the target workpiece is a semiconductor device.
Step S202, generating one or more plasmas by using a process gas containing nitrogen to obtain a mixture; the mixture contains at least charged particles.
In a specific example, the process gas may include nitrogen; in another specific example, the process gas may be a mixed gas, for example, an inert gas may be included in addition to nitrogen. Wherein the nitrogen may comprise N2, NH3, or a mixture thereof. In the case that the process gas is a mixed gas, the volume ratio of each component in the process gas may be adjusted according to actual requirements, which is not limited in the embodiments of the present disclosure.
It will be appreciated that in practical applications, where the process gas is a mixed gas, the components may be mixed first and then injected into the chamber; alternatively, the components may be injected into the chamber sequentially (the order of the sequential order is not limiting) such that the components are mixed in the chamber. For example, nitrogen is injected into the chamber first, and then an inert gas is injected into the chamber, so that the nitrogen and the inert gas are mixed in the chamber. For another example, an inert gas may be injected into the chamber first, and then nitrogen gas may be injected into the chamber such that the nitrogen gas and the inert gas mix in the chamber.
In addition, in the embodiment of the present disclosure, the plasma is obtained after the process gas is dissociated, for example, the plasma is obtained after the nitrogen is dissociated, and the generated plasma substance includes electrons, ions and free radicals. Wherein electrons and ions belong to charged particles and free radicals belong to neutral particles. That is, in embodiments of the present disclosure, the mixture actually contains at least charged particles and radicals generated after dissociation of nitrogen.
It should be further noted that, in practical applications, if the workpiece processing method provided in the embodiments of the present disclosure is implemented on a workpiece processing apparatus in which a processing chamber and a plasma chamber are separated, the step of generating one or more plasmas to obtain a mixture may be performed in the plasma chamber, and after generating one or more plasmas to obtain a mixture, the mixture is introduced into the processing chamber to complete a subsequent workpiece processing procedure.
In step S203, during the nitridation reaction, the faraday shield disposed in the chamber is utilized to enable the charged particles to have a first energy within a predetermined range.
In the disclosed embodiments, during the nitridation reaction, the energy of the charged particles is reduced by using a faraday shield disposed in the chamber, so that the charged particles have a first energy within a predetermined range. In a specific example, the acceleration energy of the charged particles may be reduced such that the charged particles have a first energy within a preset range.
Referring to fig. 3A and 3B, in an embodiment of the disclosure, the faraday shield 301 may be a hollow shielding structure made of a conductive material, and a strip-shaped or other-shaped opening 3011 is provided thereon to serve as a channel for radio frequency energy. For example, a plurality of stripe-shaped openings 3011 may be provided in the faraday shield 301 in a circumferential array as channels for rf energy. Further, in a specific example, the conductive material may be a metal material such as aluminum (Al), iron (Fe), copper (Cu), etc., which is not limited by the embodiments of the present disclosure. In practice, faraday shield 301 may be grounded.
Referring to fig. 4, in an embodiment of the present disclosure, a workpiece processing apparatus may include a chamber 401, a support 402, a dielectric window 403, a showerhead 404, a sensing element 405, and a faraday shield 406.
Wherein the support 402 is disposed in the internal space 4011 of the chamber 401 for supporting the target workpiece 407, and the dielectric window 403 is disposed above the support 402 and serves as a ceiling of the internal space 4011. The dielectric window 403 includes a central portion 4031 and an angled peripheral portion 4032, and the central portion 4031 provides space for locating a showerhead 404 to inject a process gas containing nitrogen into the interior space 4011. A sensing element 405 is disposed over the dielectric window 403 for generating one or more plasmas in the interior space 4011 using a process gas comprising nitrogen gas when supplied with radio frequency energy by a bias source (not shown) to obtain a mixture 408 comprising at least charged particles 4081 and radicals 4082.
In the disclosed embodiment, a faraday shield 406 is disposed in the chamber 401, for example, between the inductive element 405 and the dielectric window 403, which may be used to reduce the acceleration energy of the charged particles so that the charged particles 4081 have a first energy within a predetermined range. Specifically, the density of the charged particles 4081 in the mixture 408 may be reduced using the faraday shield 406 such that the difference to ground potential of the charged particles 4081 may be reduced, thereby reducing the acceleration energy of the charged particles 4081 such that the charged particles 4081 have a first energy within a preset range.
Step S204, exposing the target workpiece to a mixture containing charged particles with a first energy toIn SiO 2 At least part of the layer is formed with a SiOxNy layer.
After exposing the target workpiece to the mixture containing charged particles having the first energy, the radicals contained in the mixture react with SiO 2 The layer is nitrided to react with SiO 2 At least part of the layer is formed with a SiOxNy layer.
Referring to fig. 5, a Si substrate 5011 of a target workpiece 501 is formed with SiO 2 The layer 5012, after performing step S201, step S202 and step S203, reduces the difference to ground potential of the charged particles 5031 due to the faraday shield layer 502 being provided, thereby reducing the acceleration energy of the charged particles 5031 such that the charged particles 5031 have a first energy within a preset range. Then, in exposing the target workpiece 501 to the mixture 503 of charged particles 5031 having the first energy, to at SiO 2 During the formation of the SiOxNy layer 5013 in at least part of the area of the layer 5012, the charged particles have a lower first energy, which can effectively reduce the nitrogen doping depth L2 of the SiOxNy layer 5013 (penetration depth of the nitrogen element 5014 in the SiOxNy layer 5013 when the concentration of the nitrogen element 5014 in the SiOxNy layer 5013 reaches the maximum).
Based on the foregoing, it can be appreciated that in the embodiments of the present disclosure, the nitrogen doping depth may specifically be a penetration depth of the nitrogen element in the SiOxNy layer when the concentration of the nitrogen element in the SiOxNy layer reaches a maximum.
By the workpiece processing method provided by the embodiment of the disclosure, the target workpiece can be placed on the support piece in the chamber, and SiO is formed on the target workpiece 2 A layer; generating one or more plasmas using a process gas comprising nitrogen to obtain a mixture; the mixture at least comprises charged particles; in the nitriding reaction process, utilizing a Faraday shielding layer arranged in a chamber to enable charged particles to have first energy within a preset range; exposing the target workpiece to a mixture containing charged particles having a first energy to form a mixture of particles having a first energy 2 At least part of the layer is formed with a SiOxNy layer. During the nitridation reaction, the charged particles are in a predetermined range due to the Faraday shielding layer arranged in the chamber First energy, thus, in exposing the target workpiece to a mixture of charged particles having first energy contained therein to generate a charge of a second energy 2 The charged particles have a lower first energy during the formation of the SiOxNy layer in at least part of the region of the layer, which effectively reduces the nitrogen doping depth of the SiOxNy layer, thereby meeting the requirements of the prior process, i.e. during the SiO 2 The layer is doped with N element having a sufficient concentration and the doping depth of N element is low.
In the disclosed embodiments, the acceleration energy of charged particles is reduced during the nitridation reaction by a faraday shield disposed in the chamber, such that the charged particles have a first energy. Based on this, it can be appreciated that in embodiments of the present disclosure, the first energy is less than the second energy; the second energy is the energy of charged particles in the resulting mixture in the case where the chamber is not provided with a faraday shield.
As previously described, in the case where the chamber is provided with a faraday shield, the density of charged particles in the mixture can be reduced by the faraday shield, and then the difference in the charged particles to ground potential can be reduced, thereby reducing the acceleration energy of the charged particles so that the charged particles have a first energy within a predetermined range. Whereas in the case of a chamber not provided with a faraday shield, the resulting mixture has a higher density of charged particles, the potential difference to ground and the acceleration energy will also be at a higher level than in the case of a chamber not provided with a faraday shield, and therefore the charged particles in the mixture must have a second energy that is greater than the first energy. In other words, the density of charged particles having a first energy is less than the density of charged particles having a second energy, and thus the first energy is less than the second energy.
In the embodiment of the disclosure, after the nitridation reaction is completed, the nitrogen doping depth of the formed SiOxNy layer is the first depth; the first depth is smaller than the second depth, and the second depth is the nitrogen doping depth of the SiOxNy layer formed after the nitridation reaction is completed under the condition that the chamber is not provided with the Faraday shielding layer.
As previously described, during the nitridation reaction, a Faraday shield disposed in the chamber is utilizedA shielding layer for reducing acceleration energy of the charged particles so that the charged particles have a first energy within a preset range, the first energy being smaller than the second energy; the second energy is the energy of charged particles in the resulting mixture in the case where the chamber is not provided with a faraday shield. Thus, in exposing the target workpiece to a mixture of charged particles having a first energy to form a mixture of particles having a first energy 2 During formation of the SiOxNy layer in at least part of the area of the layer, the charged particles have a first energy that is lower, which can effectively reduce the nitrogen doping depth of the SiOxNy layer such that the first depth is smaller than the second depth.
For ease of understanding and comparison, in embodiments of the present disclosure, the first depth may be considered as the nitrogen doping depth L2 of the SiOxNy layer 5013 shown in fig. 5, and the second depth may be considered as the nitrogen doping depth L1 of the SiOxNy layer 1013 shown in fig. 1, the first depth being significantly smaller than the second depth.
In addition, it should be noted that, in the embodiment of the disclosure, the first gas content corresponding to the first depth is a first content, and the second gas content corresponding to the second depth is a second content; the difference between the first content and the second content is smaller than a preset threshold value; the first content is the total content of nitrogen injected into the chamber under the condition that the chamber is provided with the Faraday shielding layer, and the second content is the total content of nitrogen injected into the chamber under the condition that the chamber is not provided with the Faraday shielding layer.
Wherein the preset threshold may be a small value, for example, 10 standard cubic centimeters (Cm 3 ). That is, in embodiments of the present disclosure, the first depth is less than the second depth where the total nitrogen content in the injection chamber is substantially near. Based on this, it can be further determined that in the embodiments of the present disclosure, the first depth is smaller than the second depth because the acceleration energy of the charged particles is reduced by the faraday shield disposed in the chamber during the nitridation reaction so that the charged particles have the first energy within the preset range, and thus, the target workpiece is exposed to the mixture to generate the silicon oxide film on the surface of the substrate 2 In the process of forming the SiOxNy layer in at least part of the region of the layer, the charged particles have low first energy, so that the nitrogen doping depth of the SiOxNy layer can be effectively reduced.
Referring to fig. 6, by way of example, in the case where the total nitrogen content in the implantation chamber is the first content V1 in the workpiece processing method provided by the embodiment of the present disclosure, after the nitridation reaction is completed, the SiOxNy layer is formed to have a nitrogen doping depth of a first depth L3 (penetration depth of nitrogen element in the SiOxNy layer when the concentration of nitrogen element in the SiOxNy layer reaches a maximum), the first depth L3 being about
In the case where the total nitrogen content in the implantation chamber is the second content V2 and the chamber is not provided with the Faraday shielding layer, the nitrogen doping depth of the SiOxNy layer formed after the completion of the nitriding reaction is a second depth L4 (the penetration depth of the nitrogen element in the SiOxNy layer when the concentration of the nitrogen element in the SiOxNy layer reaches the maximum), the second depth L4 is about->
The first content V1 may be represented by an area enclosed between the curve T1 and the coordinate axes (X-axis and Y-axis), the second content V2 may be represented by an area enclosed between the curve T2 and the coordinate axes, and a difference between the first content V1 and the second content V2 is smaller than a preset threshold, that is, the first content V1 and the second content V2 are substantially close.
It is apparent that in the presently disclosed embodiments, the first depth L3 is less than the second depth L4 where the total nitrogen content in the injection chamber is substantially close.
In the embodiment of the disclosure, the structural characteristics of the faraday shielding layer can be optimized to improve the radio frequency passing rate of the faraday shielding layer. Based on this, the workpiece processing method provided by the embodiment of the disclosure may further include:
the first depth is reduced from a first value to a second value with the faraday shield adjusted from the first structural feature to the second structural feature; the first radio frequency passing rate corresponding to the first structural feature is smaller than the second radio frequency passing rate corresponding to the second structural feature.
In an embodiment of the disclosure, the second structural feature is configured to adopt one or more of the following structural feature optimization schemes with respect to the first structural feature:
in the case that the basic structures (shapes and sizes) of the openings on the faraday shield layer are the same, the number of the openings is increased, for example, the first structural feature includes that the number of the openings is 100, the number of the openings can be adjusted to be more than 100, and can be 120, 150 or 180, and the embodiment of the disclosure is not particularly limited, and only needs to be adjusted according to actual requirements;
the thickness of the faraday shielding layer is reduced, for example, the first structural feature includes that the thickness of the faraday shielding layer is 5 millimeters (Mm), and the thickness of the faraday shielding layer can be adjusted to be less than 5Mm, and specifically can be 4Mm, or 3.5Mm, or 3Mm, which is not particularly limited, and only needs to be adjusted according to actual requirements;
Reducing the sidewall roughness of the opening, for example, where the first structural feature includes the sidewall roughness of the opening being 0.05 micrometers (Um), the sidewall roughness of the opening may be adjusted to be less than 0.05Um, and may specifically be 0.02Um, or 0.01Um, or 0.005Um, which is not particularly limited and only needs to be adjusted according to practical requirements.
Through the arrangement, in the embodiment of the disclosure, the radio frequency passing rate of the Faraday shielding layer can be improved, so that the first depth can be reduced from the first value to the second value, thereby meeting the requirement of the advanced process, namely, in SiO 2 The layer is doped with N element having a sufficient concentration and the doping depth of N element is low.
In embodiments of the present disclosure, the first depth ranges from about
To about->
In addition, in some alternative embodiments, the process gas further includes an inert gas, such as argon (Ar) and/or helium (He), for increasing the dissociation rate of nitrogen.
In some alternative embodiments, the process gas comprises the following components in the volume ratio:
nitrogen gas: about 60% to about 80%, for example, in a specific example, the volume ratio of nitrogen is 60%, or 70%, or 80%, which is not particularly limited in the embodiments of the present disclosure, and only needs to be adjusted according to actual requirements;
Inert gas: about 20% to about 40%, for example, in a specific example, the inert gas is 20% by volume, or 30% by volume, or 40% by volume, which is not particularly limited in the embodiments of the present disclosure, and only needs to be adjusted according to actual needs.
For example, the volume ratio of nitrogen in the process gas is about 60%, and the volume ratio of inert gas in the process gas is about 40%. For another example, the volume ratio of nitrogen in the process gas is about 70%, and the volume ratio of inert gas in the process gas is about 30%. For another example, the volume ratio of nitrogen in the process gas is about 80%, and the volume ratio of inert gas in the process gas is about 20%.
In addition, in the embodiments of the present disclosure, the inert gas pair will be equal to SiO 2 The layer is bombarded and therefore inert gas may also be used to adjust the nitrogen doping depth of the SiOxNy layer. Based on this, in practical application, the purpose of adjusting the nitrogen doping depth of the SiOxNy layer can also be achieved by adjusting the volume ratio of the inert gas. For example, the inert gas content of the process gas is reduced from a first value to a second value and the first depth is reduced from a third value to a fourth value.
In some alternative embodiments, the processing parameters of the chamber include one or more of the following:
Pressure: about 5 millitorr (MTorr) to about 40MTorr, for example, in a specific example, the pressure is 5MTorr, or 25MTorr, or 40MTorr, which is not particularly limited by the disclosed embodiments and need only be adjusted according to actual needs;
radio frequency source power: about 1400 watts (W) to about 2200W, for example, in a specific example, the rf source power is 1400W, or 1800W, or 2200W, which the disclosed embodiments are not limited to, but need only be adjusted according to actual needs;
temperature: about 30 ℃ to about 50 ℃, e.g., in a specific example, a temperature of 30 ℃, or 40 ℃, or 50 ℃, which is not particularly limited by the embodiments of the present disclosure, but only needs to be adjusted according to actual needs;
flow rate of process gas: about 50 standard cubic centimeters per minute (Cm) 3 /Min) to about 400 Cm 3 In a specific example, the process gas has a gas flow of 50 Cm 3 /Min, or 250 standard Cm 3 /Min, or 400 standard Cm 3 The Min, the embodiment of the disclosure is not particularly limited, and the Min is only required to be adjusted according to actual requirements;
workpiece processing time: about 60 seconds (S) to about 180S, for example, in a specific example, the workpiece processing time is 60S, or 120S, or 180S, which is not particularly limited in the embodiments of the present disclosure, and only needs to be adjusted according to actual requirements.
The pressure is understood to be the pressure in the chamber in which the mixture is located. For example, when implemented on a workpiece processing apparatus in which the process chamber and the plasma chamber are separate, the pressure of the mixture may be the pressure of the process chamber.
Under the condition that the chamber is provided with the processing parameters, the dissociation rate of nitrogen can be increased, and meanwhile, the free radicals contained in the mixture can be prevented from being compounded back into a gaseous state as much as possible, so that the content of the free radicals in the mixture can meet the processing requirements of workpieces.
The embodiment of the disclosure also provides a workpiece processing apparatus, including:
a plasma chamber for receiving a process gas;
a processing chamber provided with a support for supporting a target workpiece on which SiO is formed 2 A layer;
an inductive element for inducing the generation of a plasma in the plasma chamber;
a bias source for providing a radio frequency power supply to the inductive element;
a controller for controlling the bias source and the sensing element to perform a workpiece processing process, the workpiece processing process comprising the operations of:
providing radio frequency energy to the inductive element by controlling the bias source to generate one or more plasmas using a process gas comprising nitrogen to obtain a mixture; the mixture at least comprises charged particles;
During the nitridation reaction, utilizing a faraday shield layer disposed in the plasma chamber to provide charged particles with a first energy within a predetermined range;
exposing the target workpiece to a mixture containing charged particles having a first energy to form a mixture of particles having a first energy 2 At least part of the layer is formed with a SiOxNy layer.
In some alternative embodiments, the plasma chamber and the processing chamber are the same chamber.
In some alternative embodiments, the first energy is less than the second energy; the second energy is the energy of charged particles in the resulting mixture without a faraday shield in the plasma chamber.
In some alternative embodiments, the density of charged particles having a first energy is less than the density of charged particles having a second energy.
In some alternative embodiments, after the nitridation reaction is completed, the SiOxNy layer is formed to a first depth of doping nitrogen; the first depth is smaller than the second depth, and the second depth is the nitrogen doping depth of the SiOxNy layer formed after the nitridation reaction is completed under the condition that the plasma chamber is not provided with the Faraday shielding layer.
In some alternative embodiments, the first gas content corresponding to the first depth is a first content and the second gas content corresponding to the second depth is a second content; the difference between the first content and the second content is smaller than a preset threshold, the first content is the total content of nitrogen injected into the plasma chamber when the Faraday shielding layer is arranged on the plasma chamber, and the second content is the total content of nitrogen injected into the plasma chamber when the Faraday shielding layer is not arranged on the plasma chamber.
In some alternative embodiments, the workpiece handling process further comprises:
the first depth is reduced from a first value to a second value with the faraday shield adjusted from the first structural feature to the second structural feature; the first radio frequency passing rate corresponding to the first structural feature is smaller than the second radio frequency passing rate corresponding to the second structural feature.
In some alternative embodiments, the first depth ranges from about
To about->
In some alternative embodiments, the process gas further comprises an inert gas.
In some alternative embodiments, the inert gas comprises Ar and/or He.
In some alternative embodiments, the process gas comprises the following components in the volume ratio:
nitrogen gas: about 60% to about 80%;
inert gas: about 20% to about 40%.
In some alternative embodiments, the processing parameters of the chamber include one or more of the following:
pressure: about 5MTorr to about 40MTorr;
radio frequency source power: about 1400W to about 2200W;
temperature: about 30 ℃ to about 50 ℃;
flow rate of process gas: about 50 standard Cm 3 Min to about 400 Cm 3 /Min；
Workpiece processing time: about 60 seconds to about 180 seconds.
The embodiments of the present disclosure are the apparatus claims corresponding to the foregoing workpiece processing method, and therefore, reference may be made to the corresponding descriptions in the foregoing method embodiments, which are not repeated herein.
By the implementation of the present disclosureThe workpiece processing apparatus provided in the example can place a target workpiece on a support member in a chamber, the target workpiece being formed with SiO 2 A layer; generating one or more plasmas using a process gas comprising nitrogen to obtain a mixture; the mixture at least comprises charged particles; in the nitriding reaction process, utilizing a Faraday shielding layer arranged in a chamber to enable charged particles to have first energy within a preset range; exposing the target workpiece to a mixture containing charged particles having a first energy to form a mixture of particles having a first energy 2 At least part of the layer is formed with a SiOxNy layer. During the nitridation reaction, the charged particles have a first energy within a predetermined range by means of a Faraday shielding layer disposed in the chamber, so that the target workpiece is exposed to a mixture containing charged particles having the first energy to form a mixture of SiO 2 The charged particles have a lower first energy during the formation of the SiOxNy layer in at least part of the region of the layer, which effectively reduces the nitrogen doping depth of the SiOxNy layer, thereby meeting the requirements of the prior process, i.e. during the SiO 2 The layer is doped with N element having a sufficient concentration and the doping depth of N element is low.
In a specific example, the workpiece processing apparatus may specifically be a plasma etcher 700, as shown in fig. 7, and the plasma etcher 700 may include:
a process chamber (i.e., process chamber) 701 defining a vertical direction V and a lateral direction L.
A susceptor (i.e., support) 704 disposed within the interior space 702 of the process chamber 701. The susceptor 704 may be configured to support a substrate or a workpiece 706 to be subjected to an etching process in embodiments of the present disclosure within the interior space 702. The dielectric window 710 is located above the base 704 and serves as a ceiling for the interior space 702. The dielectric window 710 includes a central portion 712 and an angled peripheral portion 714, and the central portion 712 provides space for placement of a showerhead 720 to inject process gases into the interior space 702.
In some alternative embodiments, plasma etcher 700 may include a plurality of sensing elements, such as primary sensing element 730 and secondary sensing element 740, for generating one or more plasmas in interior space 702 using a process gas comprising nitrogen. The primary inductive element 730 and the secondary inductive element 740 may each include a coil or antenna element that, when supplied with Radio Frequency (RF) source power, may induce a plasma in the process gas in the interior 702 of the process chamber 701. For example, first RF generator 790 may be configured to provide electromagnetic energy to primary inductive element 730 through matching network 792. The second RF generator 796 may be configured to provide electromagnetic energy to the secondary inductive element 740 through the matching network 794.
Although the disclosed embodiments use terms primary inductive element and secondary inductive element, it should be noted that the terms primary and secondary are used for convenience only and are not intended to limit the disclosed embodiments. Furthermore, in practical applications, the secondary coil may be operated independently of the primary coil. The primary coil may be operated independently of the secondary coil. Additionally, in a specific example, plasma etcher 700 may have only a single inductive coupling element.
In some alternative embodiments, plasma etcher 700 may include a metal shield 752 disposed about a secondary inductive element 740. As such, the metal shield 752 separates the primary inductive element 730 and the secondary inductive element 740 to reduce crosstalk between the primary inductive element 730 and the secondary inductive element 740.
In some alternative embodiments, plasma etcher 700 can include a first faraday shield 754 disposed between primary inductive element 730 and dielectric window 710. The first faraday shield 754 may be a slotted metal shield that reduces capacitive coupling between the primary inductive element 730 and the processing chamber 701. As shown in fig. 7, a first faraday shield 754 may be fitted over the angled portion of the dielectric window 710.
Furthermore, as described in the foregoing workpiece processing method embodiments, in the presently disclosed embodiments, on the susceptor 704 that places the workpiece 706 in the processing chamber 701, siO is formed on the workpiece 706 2 A layer and generating one or more plasmas using a process gas containing nitrogen gas toAfter obtaining a mixture comprising at least charged particles, the first faraday shield 754 may be utilized to reduce the acceleration energy of the charged particles during the nitridation reaction, such that the charged particles have a first energy, and finally, exposing the workpiece 706 to a mixture of charged particles having the first energy contained therein to form a mixture of particles having the first energy at the SiO 2 A SiN layer is formed on at least a portion of the layer.
In some alternative embodiments, the metal shield 752 and the first faraday shield 754 may form a single body 750 for ease of manufacture or other purposes. The multiple turns of primary inductive element 730 may be located adjacent to the first faraday shield 754 of the unitary body 750. The secondary inductive element 740 may be located proximate to the metallic shield 752 of the unitary body 750, for example, between the metallic shield 752 and the dielectric window 710.
The arrangement of the primary inductive element 730 and the secondary inductive element 740 on opposite sides of the metallic shield 752 allows the primary inductive element 730 and the secondary inductive element 740 to have different structural configurations and perform different functions. For example, the primary inductive element 730 may include a multi-turn coil located near a peripheral portion of the process chamber 701. The primary inductive element 730 may be used for basic plasma generation and reliable start-up during the intrinsic transient ignition phase. The primary inductive element 730 may be coupled to a powerful RF generator and an expensive auto-tuning matching network and may operate at an increased RF frequency (e.g., about 13.56 MHz).
In some alternative embodiments, the secondary inductive element 740 may be used for corrective and auxiliary functions as well as for improving the stability of the plasma during steady state operation. Furthermore, since the secondary inductive element 740 may be used primarily for corrective and auxiliary functions as well as to improve plasma stability during steady state operation, the secondary inductive element 740 need not be coupled to a powerful RF generator as the primary inductive element 730, and a different and cost-effective design may be made to overcome the difficulties associated with previous designs. As discussed in detail below, the secondary inductive element 740 may also operate at a lower frequency (e.g., about 2 MHz), allowing the secondary inductive element 740 to be very compact and fit in a limited space at the top of the dielectric window.
In some alternative embodiments, primary inductive element 730 and secondary inductive element 740 may operate at different frequencies. The frequencies may be sufficiently different to reduce cross-talk in the plasma between the primary inductive element 730 and the secondary inductive element 740. For example, the frequency applied to the primary inductive element 730 may be at least about 1.5 times the frequency applied to the secondary inductive element 730. In a specific example, the frequency applied to the primary inductive element 730 may be about 13.56MHz and the frequency applied to the secondary inductive element 740 may be in the range of about 1.75MHz to about 2.15 MHz. Other suitable frequencies may also be used, for example, about 400kHz, about 4MHz, and about 27MHz. Although embodiments of the present disclosure are discussed with reference to primary inductive element 730 operating at a higher frequency relative to secondary inductive element 740, those skilled in the art, using the disclosure provided herein, will appreciate that secondary inductive element 740 may be operated at a higher frequency without departing from the scope of the present disclosure.
In some alternative embodiments, secondary inductive element 740 may include a planar coil 742 and a magnetic flux concentrator 744. The magnetic flux concentrator 744 may be made of ferrite material. The use of a magnetic flux concentrator with an appropriate coil may provide the secondary inductive element 740 with a higher plasma coupling and good energy transfer efficiency, and may significantly reduce its coupling with the metallic shield 752. The use of a lower frequency (e.g., about 2 MHz) on the secondary inductive element 740 may increase the skin layer, which also improves plasma heating efficiency.
In some alternative embodiments, primary inductive element 730 and secondary inductive element 740 may carry different functions. For example, the primary inductive element 730 may be used to perform the basic function of plasma generation during ignition and provide adequate actuation (Priming) of the secondary inductive element 740. The primary inductive element 730 may have a coupling to both the plasma and the ground shield to stabilize the plasma potential. The first faraday shield 754 associated with the primary inductive element 730 avoids window sputtering and can be used to provide coupling to a ground shield.
The additional coil may be operated in the presence of good plasma initiation provided by the primary inductive element 730, and therefore, preferably has good plasma coupling to the plasma and good energy transfer efficiency. The secondary inductive element 740 including the magnetic flux concentrator 744 provides both good magnetic flux transfer to the plasma volume and good decoupling of the secondary inductive element 740 from the surrounding metallic shield 752. The symmetrical driving of the magnetic flux concentrator 744 and secondary inductive element 740 further reduces the voltage amplitude between the coil end and the surrounding grounded element. This may reduce sputtering of the dome but at the same time may bring some small capacitive coupling to the plasma, which may be used to assist ignition. In some alternative embodiments, a second faraday shield may be used in conjunction with the secondary inductive element 740 to reduce capacitive coupling of the secondary inductive element 740.
In some alternative embodiments, plasma etcher 700 may include an RF bias electrode 760 disposed within a process chamber 701. The plasma etcher 700 may further include a ground plane 770 disposed within the processing chamber 701 such that the ground plane 770 is spaced apart from the RF bias electrode 760 along the vertical direction V. In some alternative embodiments, as shown in fig. 7, an RF bias electrode 760 and a ground plane 770 may be disposed within the base 704.
In some alternative embodiments, RF bias electrode 760 may be coupled to RF source power generator 780 via a suitable matching network 782. When RF source power generator 780 provides RF energy to RF bias electrode 760, a plasma may be generated from the mixture in process chamber 701 for direct exposure to substrate 706. In some alternative embodiments, the RF bias electrode 760 may define an RF region 762 extending along the lateral direction L between a first end 764 of the RF bias electrode 760 and a second end 766 of the RF bias electrode 760. For example, in some alternative embodiments, the RF region 762 may span from the first end 764 of the RF bias electrode 760 to the second end 766 of the RF bias electrode 760 along the lateral direction L. The RF region 762 may further extend along the vertical direction V between the RF bias electrode 760 and the dielectric window 710.
It should be appreciated that the length of the ground plane 770 along the lateral direction L is greater than the length of the RF bias electrode 760 along the lateral direction L. In this way, the ground plane 770 may direct RF energy emitted by the RF bias electrode 760 toward the substrate 706.
It should be noted that in the description of plasma etcher 700, the term "about" in combination with a numerical value is intended to be within ten percent (10%) of the indicated value.
Here, the structure shown in fig. 7 is merely exemplary, and in practical applications, the plasma etcher 700 may further include other functional components, etc. based on practical requirements, which are not limited by the embodiments of the present disclosure.
The embodiment of the disclosure also provides a semiconductor device, which comprises a target workpiece obtained by the workpiece processing method, wherein the target workpiece comprises SiO 2 Layer and SiO 2 SiOxNy layer formed in at least partial region of layer, siO 2 The depth of doping nitrogen of the layer is about
To about->
In the target workpiece included in the semiconductor device provided by the embodiment of the disclosure, the nitrogen doping depth of the SiOxNy layer is low, so that the requirement of the advanced process is met, namely, the SiOxNy layer is formed on SiO 2 The layer is doped with N element having a sufficient concentration and the doping depth of N element is low.
The semiconductor device may be a logic processor, a memory, or the like.
It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps recited in the present disclosure may be performed in parallel, sequentially, or in a different order, provided that the desired results of the disclosed aspects are achieved, and are not limited herein.
The above detailed description should not be taken as limiting the scope of the present disclosure. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present disclosure are intended to be included within the scope of the present disclosure.
Claims (24)
1. A method of processing a workpiece, comprising:
placing a target workpiece on a support in a chamber, the target workpiece having a silicon oxide layer formed thereon;
generating one or more plasmas using a process gas comprising nitrogen to obtain a mixture; the mixture at least comprises charged particles;
During the nitridation reaction, utilizing a faraday shield layer disposed in the chamber to provide the charged particles with a first energy within a predetermined range;
the target workpiece is exposed to the mixture of charged particles having a first energy to form a silicon oxynitride layer in at least a partial region of the silicon oxide layer.
2. The method of claim 1, wherein the first energy is less than the second energy; the second energy is the energy of charged particles in the resulting mixture without the faraday shield being provided in the chamber.
3. The method of claim 2, wherein the density of charged particles having a first energy is less than the density of charged particles having a second energy.
4. A method according to any one of claims 1 to 3, wherein after the nitridation reaction is completed, the silicon oxynitride layer is formed to a first depth of doping nitrogen; the first depth is smaller than the second depth, and the second depth is the nitrogen doping depth of the formed silicon oxynitride layer after the nitridation reaction is completed under the condition that the chamber is not provided with the Faraday shielding layer.
5. The method of claim 4, wherein the first gas content corresponding to the first depth is a first content and the second gas content corresponding to the second depth is a second content; the difference between the first content and the second content is smaller than a preset threshold, the first content is the total content of nitrogen injected into the chamber under the condition that the Faraday shielding layer is arranged on the chamber, and the second content is the total content of nitrogen injected into the chamber under the condition that the Faraday shielding layer is not arranged on the chamber.
6. The method of claim 4, further comprising:
the first depth decreases from a first value to a second value with the faraday shield adjusted from a first structural feature to a second structural feature; the first radio frequency passing rate corresponding to the first structural feature is smaller than the second radio frequency passing rate corresponding to the second structural feature.
7. The method of claim 4, wherein the first depth ranges from about 3 angstroms to about 10 angstroms.
8. The method of claim 1, wherein the process gas further comprises an inert gas.
9. The method of claim 8, wherein the inert gas comprises argon and/or helium.
10. The method of claim 8, wherein the process gas comprises the following components in the volume ratio:
the nitrogen gas: about 60% to about 80%;
the inert gas: about 20% to about 40%.
11. The method of claim 1, wherein the processing parameters of the chamber include one or more of:
pressure: about 5 mtorr to about 40 mtorr;
radio frequency source power: about 1400 watts to about 2200 watts;
temperature: about 30 degrees celsius to about 50 degrees celsius;
flow rate of the process gas: about 50 standard cubic centimeters per minute to about 400 standard cubic centimeters per minute;
workpiece processing time: about 60 seconds to about 180 seconds.
12. A workpiece handling apparatus, comprising:
a plasma chamber for receiving a process gas;
a processing chamber provided with a support for supporting a target workpiece on which a silicon oxide layer is formed;
an inductive element for inducing the generation of a plasma in the plasma chamber;
a bias source for providing a radio frequency power supply to the inductive element;
a controller for controlling the bias source and the inductive element to perform a workpiece processing process, the workpiece processing process comprising operations of:
Providing radio frequency energy to the inductive element by controlling the bias source to generate one or more plasmas using a process gas comprising nitrogen to obtain a mixture; the mixture at least comprises charged particles;
during the nitridation reaction, utilizing a faraday shield layer disposed in the plasma chamber to provide the charged particles with a first energy within a predetermined range;
the target workpiece is exposed to the mixture of charged particles having a first energy to form a silicon oxynitride layer in at least a partial region of the silicon oxide layer.
13. The apparatus of claim 12, wherein the plasma chamber and the processing chamber are the same chamber.
14. The apparatus of claim 12, wherein the first energy is less than the second energy; the second energy is energy of charged particles in the obtained mixture when the faraday shield is not provided in the plasma chamber.
15. The apparatus of claim 14, wherein the density of charged particles having a first energy is less than the density of charged particles having a second energy.
16. The apparatus of any of claims 12-15, wherein a nitrogen doping depth of the silicon oxynitride layer formed after the nitridation reaction is completed is a first depth; the first depth is smaller than the second depth, and the second depth is the nitrogen doping depth of the formed silicon oxynitride layer after the nitridation reaction is completed under the condition that the plasma chamber is not provided with the Faraday shielding layer.
17. The apparatus of claim 16, wherein a first gas content corresponding to the first depth is a first content and a second gas content corresponding to the second depth is a second content; the difference between the first content and the second content is smaller than a preset threshold, the first content is the total content of nitrogen injected into the plasma chamber when the Faraday shielding layer is arranged on the plasma chamber, and the second content is the total content of nitrogen injected into the plasma chamber when the Faraday shielding layer is not arranged on the plasma chamber.
18. The apparatus of claim 16, the workpiece handling process further comprising:
the first depth decreases from a first value to a second value with the faraday shield adjusted from a first structural feature to a second structural feature; the first radio frequency passing rate corresponding to the first structural feature is smaller than the second radio frequency passing rate corresponding to the second structural feature.
19. The apparatus of claim 16, wherein the first depth ranges from about 3 angstroms to about 10 angstroms.
20. The apparatus of claim 12, wherein the process gas further comprises an inert gas.
21. The apparatus of claim 20, wherein the inert gas comprises argon and/or helium.
22. The apparatus of claim 20 wherein the process gas comprises the following components in the volume ratio:
the nitrogen gas: about 60% to about 80%;
the inert gas: about 20% to about 40%.
23. The apparatus of claim 13, wherein the processing parameters of the chamber include one or more of:
pressure: about 5 mtorr to about 40 mtorr;
radio frequency source power: about 1400 watts to about 2200 watts;
temperature: about 30 degrees celsius to about 50 degrees celsius;
flow rate of the process gas: about 50 standard cubic centimeters per minute to about 400 standard cubic centimeters per minute;
workpiece processing time: about 60 seconds to about 180 seconds.
24. A semiconductor device comprising a target workpiece obtained by the method of any of claims 1-11, the target workpiece comprising a silicon oxide layer thereon, and a silicon oxynitride layer formed in at least a portion of the silicon oxide layer, the silicon oxynitride layer having a nitrogen doping depth in the range of about 3 angstroms to about 10 angstroms.
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