CN116031127A - Temperature control assembly, method and system capable of changing heat conductivity and plasma processing device - Google Patents
Temperature control assembly, method and system capable of changing heat conductivity and plasma processing device Download PDFInfo
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- CN116031127A CN116031127A CN202111241180.9A CN202111241180A CN116031127A CN 116031127 A CN116031127 A CN 116031127A CN 202111241180 A CN202111241180 A CN 202111241180A CN 116031127 A CN116031127 A CN 116031127A
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Abstract
The invention provides a temperature control component with variable heat conductivity, which is used for a plasma processing device and is arranged between a first component and a second component, wherein the first component and the second component have temperature difference when the plasma processing device works, and the temperature control component is used for adjusting heat conduction between the first component and the second component and comprises the following components: a hermetic chamber comprising a first side opposite the first component and a second side opposite the second component; the support framework is arranged in the airtight cavity and is supported between the first side and the second side; and the airtight cavity is used for introducing or extracting heat conduction fluid so as to adjust the heat conductivity of the temperature control component. Correspondingly, a temperature control method, a temperature control system and a plasma processing device are also provided. The invention adjusts the heat conduction between two components with temperature difference by changing the heat conductivity of the temperature control component.
Description
Technical Field
The present invention relates to the field of semiconductor technology, and in particular, to a temperature control assembly, method, system and plasma processing apparatus with variable thermal conductivity.
Background
In recent years, with the development of semiconductor manufacturing processes, plasma processing processes have been widely used in the manufacture of semiconductor devices. Such processes, e.g., deposition, etching, etc., are typically performed in a plasma processing apparatus. In order to meet the process requirements, some structures in plasma processing apparatus need to be precisely temperature controlled, such as temperature controlled structures like electrostatic chucks (ESCs), gas showerheads (shower heads), etc. The temperature control structure is usually adopted, wherein a heater is arranged on a substrate with a refrigerant flow and a cooling function, and the temperature of the temperature control structure reaches the temperature balance at a required temperature point by controlling the heating power of the heater and the refrigerating power of the refrigerant.
Because the heat capacity value of the refrigerant, the length of the pipeline and the heat capacity limit of the refrigeration substrate of the temperature-controlled component are far slower than the change of the heating power of the heater, the temperature control mode is to selectively change the power of the heater to realize temperature control. However, in this case, a large portion of the heat generated by the heater is taken away by the refrigerant, so that the upper limit of temperature control is not high enough, and an insulating layer needs to be added between the heater and the cooling substrate to reduce the energy loss. But can make the cooling process become slow after installing the heat insulating layer additional, influence the accuse temperature rate when the accuse temperature point switches, therefore need a section can be according to the online structure of adjusting the thermal conductivity of demand, reduce the thermal conductivity and form the heat insulating layer when needs are at high temperature point accuse temperature, improve the thermal conductivity and accelerate heat transfer in order to realize quick cooling when needs are cooled.
Disclosure of Invention
The invention aims to provide a temperature control component, a method, a system and a plasma processing device with variable heat conductivity, which can change the heat conductivity according to requirements and adjust the heat conduction between two components with temperature difference.
In order to achieve the above object, the present invention is realized by the following technical scheme:
a temperature control assembly of variable thermal conductivity for a plasma processing apparatus disposed between a first assembly and a second assembly, the first assembly and the second assembly having a temperature differential during operation of the plasma processing apparatus, the temperature control assembly for adjusting thermal conductivity between the first assembly and the second assembly, comprising:
a hermetic chamber comprising a first side opposite the first component and a second side opposite the second component;
the support framework is arranged in the airtight cavity and is supported between the first side and the second side;
and the airtight cavity is used for introducing or extracting heat conduction fluid so as to adjust the heat conductivity of the temperature control component.
Further, the supporting framework is made of a material with the heat conductivity of 0.01-1W/m.K.
Further, the supporting framework is made of a high polymer material.
Further, the heat conducting fluid is a heat conducting gas or a heat conducting liquid.
Further, when the heat-conducting fluid is a heat-conducting gas, the heat conductivity of the temperature control component is changed by changing the pressure of the heat-conducting gas in the airtight cavity.
Further, the heat conducting gas is helium.
Further, when the heat conduction fluid is a heat conduction liquid, the heat conductivity of the temperature control assembly is changed by introducing or extracting the heat conduction liquid into or from the airtight cavity.
Further, the thickness of the temperature control component ranges from 200 micrometers to 2000 micrometers.
Further, the air-tight cavity is formed by the air-tight shell, and the air-tight shell is provided with a fluid inlet and a fluid outlet.
Further, the airtight cavity is formed between the first component and the second component, and the supporting framework is in contact with the first component and the second component.
Further, the number of the airtight cavities is multiple, and the airtight cavities are independently controlled to be filled with or extracted from heat conduction fluid so as to adjust the heat conductivity of the area where the different airtight cavities are located in the temperature control assembly.
Further, the plasma processing device comprises a base and an electrostatic chuck, wherein the electrostatic chuck is arranged on the base, a first heater is arranged below the electrostatic chuck and is used for providing heat for the electrostatic chuck, and a first cooling channel is arranged in the base and is used for cooling the electrostatic chuck by circulating cooling liquid;
one of the first component and the second component is the first heater, and the other is the base.
Further, the plasma processing device comprises a mounting seat and a gas spray header, wherein the gas spray header is arranged below the mounting seat, a second heater is arranged between the mounting seat and the gas spray header, or the second heater is arranged above the mounting seat and is used for providing heat for the gas spray header, and a second cooling channel is arranged in the mounting seat and is used for cooling the gas spray header by circulating cooling liquid;
one of the first component and the second component is the second heater, and the other is the mounting seat.
A temperature control method, comprising:
providing a temperature control assembly as described above;
and introducing or extracting heat conduction fluid into the airtight cavity to change the heat conductivity of the temperature control assembly.
Further, when the airtight cavity is in vacuum, the temperature control component is used as a heat insulation layer; when the airtight cavity is filled with the heat-conducting fluid, the temperature control component is used as a heat-conducting layer.
A temperature control system comprising a high temperature component, a low temperature component and a variable thermal conductivity temperature control component as described above, the temperature control component being disposed between the high temperature component and the low temperature component.
A plasma processing apparatus characterized by being provided with the temperature control system as described above.
Compared with the prior art, the invention has the following advantages:
the support framework is arranged in the airtight cavity of the temperature control assembly, so that the mechanical strength can be improved, and the heat conductivity of the heat conduction fluid can be changed by introducing or extracting the heat conduction fluid from the cavity; the temperature control component is integrated into the temperature control structure, and the temperature control dynamic range of the temperature control structure can be improved by adjusting the heat conductivity.
Drawings
For a clearer description of the technical solutions of the present invention, the drawings that are needed in the description will be briefly introduced below, it being obvious that the drawings in the following description are one embodiment of the present invention, and that, without inventive effort, other drawings can be obtained by those skilled in the art from these drawings:
FIG. 1 is a schematic diagram of a capacitively-coupled plasma processing apparatus;
FIG. 2 is a schematic structural diagram of a temperature control assembly with variable thermal conductivity according to a first embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a temperature control assembly with variable thermal conductivity according to a second embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a temperature control assembly with variable thermal conductivity according to a third embodiment of the present invention;
fig. 5 is a flow chart of a temperature control method according to an embodiment of the invention.
Detailed Description
The following provides a further detailed description of the proposed solution of the invention with reference to the accompanying drawings and detailed description. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for the purpose of facilitating and clearly aiding in the description of embodiments of the invention. For a better understanding of the invention with objects, features and advantages, refer to the drawings. It should be understood that the structures, proportions, sizes, etc. shown in the drawings are for illustration purposes only and should not be construed as limiting the invention to the extent that any modifications, changes in the proportions, or adjustments of the sizes of structures, proportions, or otherwise, used in the practice of the invention, are included in the spirit and scope of the invention which is otherwise, without departing from the spirit or essential characteristics thereof.
Fig. 1 shows a schematic structure of a capacitively-coupled plasma (CCP) processing apparatus, which is an apparatus for generating plasma in a reaction chamber by capacitive coupling from a radio frequency power source applied to a plate and for etching. The vacuum reaction chamber 100 comprises a vacuum reaction chamber 100, wherein the vacuum reaction chamber 100 comprises a generally cylindrical reaction chamber side wall 101 made of metal materials, and an opening 102 is arranged on the reaction chamber side wall for accommodating the wafer to enter and exit. A gas shower head 120 and a base 110 opposite to the gas shower head are disposed in the vacuum reaction chamber 100, the gas shower head 120 is connected with a gas supply device 125, and is used for delivering reaction gas to the vacuum reaction chamber 100, and meanwhile, is used as an upper electrode of the vacuum reaction chamber 100, an electrostatic chuck 112 is disposed above the base, and meanwhile, is used as a lower electrode of the vacuum reaction chamber 100, and a reaction area is formed between the upper electrode and the lower electrode. An electrostatic electrode 113 is disposed inside the electrostatic chuck 112 for generating electrostatic attraction force to support and fix the wafer W to be processed during the process. At least one rf power source 150 is applied to one of the upper electrode or the lower electrode through a matching network 152, and generates an rf electric field between the upper electrode and the lower electrode, so as to dissociate the reactive gas into a plasma, where the plasma contains a large amount of active particles such as electrons, ions, atoms in an excited state, molecules, free radicals, and the like, and the active particles can react with the surface of the wafer W to be processed in various physical and chemical ways, so that the morphology of the wafer surface is changed, and the etching process is completed.
Wherein the gas showerhead 120 and the electrostatic chuck 112 need to be precisely temperature controlled during processing. Taking the electrostatic chuck 112 as an example, a temperature control manner is described, a first heater 114 is disposed below the electrostatic chuck 112 and is used for providing heat to the electrostatic chuck 112, and a first cooling channel is disposed in the base 110 and is used for cooling the electrostatic chuck 112 by circulating a cooling liquid. The variable conductance temperature control assembly provided by the present invention can be used to adjust the thermal conductivity between the first heater 114 and the base 110 to achieve accurate temperature control of the electrostatic chuck 112. Taking the gas shower head 120 as an example for describing the temperature control manner, the gas shower head 120 is installed below the installation seat 122, a second heater may be disposed between the installation seat and the gas shower head 120, and generally, a second cooling channel is disposed in the installation seat 122, and a cooling fluid is introduced therein to control the temperature of the gas shower head 120 together with the second heater. In other embodiments, the second heater may also be disposed above the mounting base 122, and the temperature control component with variable thermal conductivity provided by the present invention is disposed between the mounting base 122 and the second heater.
Fig. 2 shows a variable thermal conductivity temperature control assembly 200 according to a first embodiment of the present invention, which can be used in a plasma processing apparatus, disposed between a first assembly and a second assembly having a temperature differential during operation of the plasma processing apparatus, the temperature control assembly 200 being configured to regulate thermal conductivity between the first assembly and the second assembly. Specifically, in the case of controlling the temperature of the electrostatic chuck 112 in the plasma processing apparatus shown in fig. 1, the first component is, for example, the first heater 114, and the second component is, for example, the susceptor 110. In other embodiments, when the temperature of the gas showerhead 120 in the plasma processing apparatus shown in fig. 1 is controlled, the first component is, for example, a second heater, and the second component is, correspondingly, a mounting base 122.
The temperature control assembly 200 includes: a hermetic chamber 210 including a first side opposite the first component and a second side opposite the second component; the supporting framework 220 is disposed in the airtight cavity 210, supported between the first side and the second side, and maintains the overall structure of the airtight cavity 210 not to collapse, so that the first side and the second side are in good contact with the first component and the second component, uneven heat transfer is avoided, and the electrostatic chuck has enough flatness for bearing the substrate; the airtight chamber 210 is used to introduce or withdraw a heat-conducting fluid to adjust the thermal conductivity of the temperature control assembly 200. That is, when the temperature of the electrostatic chuck 112 is controlled, the temperature control assembly 200 is installed between the first heater 114 and the base 110, the first side thereof is close to the first heater 114, the second side thereof is close to the base 110, and the airtight chamber 210 is filled with a heat transfer fluid, so that the heat transfer between the first heater 114 and the base 110 can be increased, and when the heat transfer fluid in the airtight chamber 210 is extracted, the heat transfer between the first heater 114 and the base 110 is reduced, thereby controlling the amount of the heat transfer fluid introduced or extracted into the airtight chamber 210 according to the actual process requirements, so as to adjust the heat transfer between the first heater 114 and the base 110. It can be seen that integrating the temperature control assembly 200 between the base 11 and the first heater 114 in the temperature control structure of the electrostatic chuck 112 can greatly improve the temperature control dynamic range of the temperature control structure to the electrostatic chuck 112 by adjusting the thermal conductivity thereof.
The thermally conductive fluid may be a thermally conductive gas, such as helium. There is a corresponding variation in the thermal conductivity and the air pressure of the gas, and the thermal conductivity of the temperature control assembly 200 is changed by changing the pressure of the thermally conductive gas in the airtight chamber 210. That is, when the airtight chamber 210 is filled with the heat-conducting gas, the heat conductivity of the temperature control assembly 200 increases with the increase of the gas pressure, and the heat transfer is accelerated, the temperature control assembly 200 can be used as a heat conducting layer, when the heat-conducting gas in the airtight chamber 210 is extracted, the heat conductivity of the temperature control assembly 200 is reduced, the heat transfer is reduced, and when the temperature is extracted to be close to vacuum, the temperature control assembly 200 can be used as a heat insulating layer.
It will be appreciated that the thermal conductivity of the temperature control assembly 200 is related to the support frame 220 when the airtight chamber 210 is near vacuum. The thermal conductivity reference values of the common materials are shown in table 1, and since the thermal conductivity of the solid materials is relatively fixed under the conditions of fixed structure and materials, in order to reduce the thermal conductivity of the supporting framework 220, the supporting framework 220 is made of a material with the thermal conductivity between 0.01 and 1W/m·k, for example, a polymer material such as Vespel, kapton polyimide, PTFE polytetrafluoroethylene, and the like.
TABLE 1
| Substance (B) | Thermal conductivity W/m.K |
| Copper (Cu) | 383 |
| Aluminum (Al) | 204 |
| Stainless steel | 17 |
| Vespel | 0.35 |
| Polyimide film (Kapton) | 0.25 |
| PTFE | 0.25 |
| Vacuum insulation panel (Vacuum Insulation Panel) | 0.004 |
| Vacuum | 0 (radiation thermal conductivity 5.67E-8W/m) 2 ·K 4 ) |
In addition, the thickness of the temperature control assembly 200 may be in the range of 200-2000 microns. The support frame 220 is disposed in the airtight chamber 210, and can be used to enhance the mechanical strength of the airtight chamber 210 when the vacuum is applied.
The heat-conducting fluid may also be a heat-conducting liquid, and by introducing or extracting the heat-conducting liquid into the airtight cavity 210, the heat conductivity of the temperature control assembly 200 is changed, so that the heat conductivity of the temperature control assembly 200 is switched between two heat conductivity coefficients, i.e. the presence and absence of the heat-conducting liquid: when the airtight chamber 210 is empty of the heat-conductive liquid, the temperature control assembly 200 acts as a heat insulation layer, reducing heat conduction; when the airtight chamber 210 is filled with the heat-conducting liquid, the temperature control assembly 200 acts as a heat-conducting layer to enhance heat conduction.
As shown in fig. 2, to ensure air tightness, the temperature control assembly 200 further includes an airtight housing 230 for forming the airtight cavity 210, wherein the airtight housing 230 encloses the supporting frame 220, and is provided with a fluid inlet and outlet 231, and a heat-conducting fluid is introduced into or extracted from the airtight cavity 220 through the fluid inlet and outlet 231. The airtight housing 230 may be made of the same or different materials as the supporting frame 220.
Fig. 3 shows a temperature control assembly 300 with variable thermal conductivity according to a second embodiment of the present invention, wherein the airtight cavity 310 is formed between the first assembly a and the second assembly B, and the supporting frame 320 is in contact with the first assembly a and the second assembly B. I.e. the heat conducting fluid within the gas tight cavity 310 may directly contact the first component a and the second component B.
The present embodiment differs from the first embodiment in that the temperature control assembly 300 does not include an airtight enclosure. For example, in controlling the temperature of the electrostatic chuck 112 in the plasma processing apparatus shown in fig. 1, the temperature control assembly 300 is disposed between the first heater 114 and the susceptor 110 as an intermediate layer, and the surfaces of the susceptor 110 and the first heater 114 may be directly used as airtight housings.
Fig. 4 shows a temperature control assembly 400 with variable thermal conductivity according to a third embodiment of the present invention, where the number of the airtight cavities 410 is plural, and the airtight cavities 410 are individually controlled to be filled with or extracted from a heat-conducting fluid, so as to adjust the thermal conductivity of the area of the temperature control assembly 400 where the different airtight cavities 410 are located. Thereby, the partition temperature control can be realized. Each airtight chamber 410 of the temperature control assembly 400 of the present embodiment may adopt the structure shown in the first embodiment or the second embodiment.
The difference between this embodiment and the first and second embodiments is that the temperature control assembly 400 is internally partitioned, so that the thermal conductivity is regulated and controlled in a partitioned manner. For example, in controlling the temperature of the electrostatic chuck 112 in the plasma processing apparatus shown in fig. 1, the temperature control assembly 400 may be stacked on the cooling temperature control of the susceptor 110 to realize the zonal control of the temperature of the electrostatic chuck 112, or used in combination with a dynamic electrostatic chuck temperature control design to control the heat transfer from the first heater 114 to the susceptor 110.
The temperature control assembly with variable thermal conductivity and the temperature control principle thereof according to the present invention are described in detail above by taking the electrostatic chuck 112 as an example. It will be appreciated by those skilled in the art that in other temperature control structures, such as the gas shower head 120, the arrangement and the temperature control principle of the temperature control component with variable thermal conductivity provided in the present invention are substantially similar, and will not be described herein.
Based on the same inventive concept, the invention also provides a temperature control system, which comprises a high temperature component, a low temperature component and a temperature control component with variable thermal conductivity, wherein the temperature control component is arranged between the high temperature component and the low temperature component and is used for adjusting the thermal conductivity between the high temperature component and the low temperature component. For example, the temperature control system may be used to control the temperature of an electrostatic chuck or a gas showerhead.
The invention also provides a plasma processing device, which is characterized in that the temperature control system is configured. The plasma processing apparatus may be a Capacitively Coupled Plasma (CCP) processing device as shown in fig. 1 or an Inductively Coupled Plasma (ICP) processing device.
The invention also provides a temperature control method, as shown in fig. 5, comprising the following steps:
step S100, providing the temperature control assembly;
and step 200, introducing or extracting heat conduction fluid into the airtight cavity to change the heat conductivity of the temperature control component.
Specifically, the temperature control assembly is arranged between the first assembly and the second assembly, and the first assembly and the second assembly have temperature differences when in operation.
When it is desired to reduce the heat transfer between the first and second components, such as when it is desired to increase the heating range of the heating component to the first component and reduce the cooling effect of the second component to the first component, a heat transfer fluid is drawn from the gas-tight chamber to a vacuum, reducing the thermal conductivity of the temperature control component, and a thermal insulation layer is formed between the first and second components. When the heat conduction between the first component and the second component needs to be quickened, for example, the cooling speed of the second component to the first component is enhanced, and when the temperature of the first component is quickly reduced, the airtight cavity is filled with heat conduction fluid, the heat conductivity of the temperature control component is improved, and the airtight cavity is used as a heat conduction layer between the first component and the second component to quicken heat transfer.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (17)
1. A temperature control assembly of variable thermal conductivity for a plasma processing apparatus disposed between a first assembly and a second assembly, the first assembly and the second assembly having a temperature differential during operation of the plasma processing apparatus, the temperature control assembly for adjusting thermal conductivity between the first assembly and the second assembly, comprising:
a hermetic chamber comprising a first side opposite the first component and a second side opposite the second component;
the support framework is arranged in the airtight cavity and is supported between the first side and the second side;
and the airtight cavity is used for introducing or extracting heat conduction fluid so as to adjust the heat conductivity of the temperature control component.
2. The variable thermal conductivity temperature control assembly of claim 1, wherein said support frame is comprised of a material having a thermal conductivity between 0.01 and 1W/m-K.
3. The temperature control assembly of claim 2, wherein the support frame is a polymeric material.
4. The variable thermal conductivity temperature control assembly of claim 1, wherein said thermally conductive fluid is a thermally conductive gas or a thermally conductive liquid.
5. The variable thermal conductivity temperature control assembly of claim 4, wherein when said thermally conductive fluid is a thermally conductive gas, the thermal conductivity of said temperature control assembly is varied by varying the pressure of said thermally conductive gas in said gas-tight chamber.
6. The variable conductance temperature-control assembly of claim 4, wherein said thermally conductive gas is helium.
7. The variable thermal conductivity temperature control assembly of claim 4, wherein when said thermally conductive fluid is a thermally conductive liquid, the thermal conductivity of said temperature control assembly is changed by passing or withdrawing said thermally conductive liquid in said hermetic chamber.
8. The variable thermal conductivity temperature control assembly of claim 1, wherein said temperature control assembly has a thickness in the range of 200-2000 microns.
9. The variable thermal conductivity temperature control assembly of claim 1, further comprising an airtight enclosure for forming said airtight cavity, said airtight enclosure being provided with a fluid access port.
10. The variable thermal conductivity temperature control assembly of claim 1, wherein said air-tight cavity is formed between said first assembly and said second assembly, said support frame being in contact with said first assembly and said second assembly.
11. A variable conductance temperature control assembly according to any one of claims 1 to 10, wherein the number of said airtight chambers is plural, and each of said airtight chambers is individually controlled to be fed or withdrawn with a heat transfer fluid to adjust the thermal conductivity of the region of said temperature control assembly where a different one of said airtight chambers is located.
12. The variable conductance temperature control assembly of claim 1, wherein said plasma processing apparatus comprises a base and an electrostatic chuck, said electrostatic chuck being disposed on said base, a first heater being disposed below said electrostatic chuck for providing heat to said electrostatic chuck, a first cooling channel being disposed in said base for circulating a cooling fluid to cool said electrostatic chuck;
one of the first component and the second component is the first heater, and the other is the base.
13. The variable conductance temperature control assembly of claim 1, wherein said plasma processing apparatus comprises a mounting base and a gas shower head, said gas shower head being disposed below said mounting base, a second heater being disposed between said mounting base and said gas shower head, or said second heater being disposed above said mounting base for providing heat to said gas shower head, a second cooling channel being disposed in said mounting base for circulating a coolant to cool said gas shower head;
one of the first component and the second component is the second heater, and the other is the mounting seat.
14. A method of controlling temperature, comprising:
providing a temperature control assembly according to any one of claims 1 to 13;
and introducing or extracting heat conduction fluid into the airtight cavity to change the heat conductivity of the temperature control assembly.
15. The method of claim 14, wherein the temperature control assembly acts as a thermal insulation layer when the airtight chamber is vacuum; when the airtight cavity is filled with the heat-conducting fluid, the temperature control component is used as a heat-conducting layer.
16. A temperature control system comprising a high temperature component, a low temperature component, and a variable conductance temperature control component according to any one of claims 1 to 13, the temperature control component being disposed between the high temperature component and the low temperature component.
17. A plasma processing apparatus, wherein the temperature control system according to claim 16 is provided.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111241180.9A CN116031127A (en) | 2021-10-25 | 2021-10-25 | Temperature control assembly, method and system capable of changing heat conductivity and plasma processing device |
| TW111127085A TWI817617B (en) | 2021-10-25 | 2022-07-19 | Variable thermal conductivity temperature control components, methods, systems and plasma processing devices |
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| CN202111241180.9A CN116031127A (en) | 2021-10-25 | 2021-10-25 | Temperature control assembly, method and system capable of changing heat conductivity and plasma processing device |
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| CN106548917B (en) * | 2015-09-21 | 2018-07-27 | 中微半导体设备(上海)有限公司 | Adjust the device and its temperature control method of device temperature in plasma etch chamber |
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