CN115992343A - Sputtering film forming apparatus and sputtering film forming method - Google Patents
Sputtering film forming apparatus and sputtering film forming method Download PDFInfo
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- CN115992343A CN115992343A CN202211251480.XA CN202211251480A CN115992343A CN 115992343 A CN115992343 A CN 115992343A CN 202211251480 A CN202211251480 A CN 202211251480A CN 115992343 A CN115992343 A CN 115992343A
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- 230000015572 biosynthetic process Effects 0.000 claims description 28
- 230000005684 electric field Effects 0.000 claims description 19
- 150000002500 ions Chemical class 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 4
- 239000013077 target material Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 28
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 18
- 230000001965 increasing effect Effects 0.000 description 16
- 230000000694 effects Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
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- 229910052786 argon Inorganic materials 0.000 description 5
- 230000006698 induction Effects 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
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- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- -1 for example Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
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- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
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- 230000002093 peripheral effect Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- 229910045601 alloy Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3471—Introduction of auxiliary energy into the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
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Abstract
The invention provides a sputtering film forming device and a sputtering film forming method, which can efficiently sputter a target. The sputtering film forming apparatus comprises: a processing container having a stage for placing a substrate thereon; a metal window which is formed of a non-magnetic metal, has a first surface that forms a top surface of the processing container, and faces the mounting table; an inductively coupled antenna, which is disposed separately from a second surface of the metal window on the opposite side of the first surface of the metal window, for generating plasma in the processing container; a high frequency power supply connected to the inductively coupled antenna; any one of a direct current power supply, a direct current pulse power supply and an alternating current power supply which are connected with the metal window; and a gas supply unit configured to supply a process gas for generating the plasma into the process container.
Description
Technical Field
The present disclosure relates to a sputter film forming apparatus and a sputter film forming method.
Background
For example, the magnetron sputtering film forming apparatus of patent document 1 forms a high-density plasma by using a direct current electric field caused by a direct current voltage applied to a target and a magnetic field from a magnet located on the back surface of the target, and performs sputtering on the target, thereby forming a film.
For example, the sputter film forming apparatus of patent document 2 performs film formation by sputtering a target using inductively coupled plasma. The sputtering film forming apparatus includes an induction coil provided in correspondence with a dielectric plate, and a magnet provided on the back surface of the target, and when high-frequency power is introduced into the induction coil, an induction electric field is formed in the processing space through the dielectric plate.
Prior art literature
Patent literature
Patent document 1: international publication No. 2009/116430
Patent document 2: japanese patent application laid-open No. 2012-209483
Disclosure of Invention
Problems to be solved by the invention
The present disclosure provides a technique capable of efficiently sputtering a target.
Solution for solving the problem
According to one aspect of the present disclosure, there is provided a sputter film forming apparatus including: a processing container having a stage for placing a substrate thereon; a metal window which is formed of a non-magnetic metal, has a first surface that forms a top surface of the processing container, and faces the mounting table; an inductively coupled antenna, which is disposed separately from a second surface of the metal window on a side opposite to the first surface of the metal window, for generating plasma in the processing container; a high frequency power supply connected to the inductively coupled antenna; any one of a direct current power supply, a direct current pulse power supply and an alternating current power supply which are connected with the metal window; and a gas supply unit configured to supply a process gas for generating the plasma into the process container.
ADVANTAGEOUS EFFECTS OF INVENTION
According to one aspect, the target can be sputtered efficiently.
Drawings
Fig. 1 is a sectional view showing a sputtering film forming apparatus according to an embodiment.
Fig. 2 is a diagram for explaining generation of inductively coupled plasma using a metal window.
Fig. 3 is a top view of a metal window and an inductively coupled antenna according to an embodiment.
Fig. 4 is a top view of a metal window and an inductively coupled antenna according to an embodiment.
Fig. 5 is a diagram showing an example of the vertically wound rectangular coil antenna according to the embodiment.
Fig. 6 is a graph showing experimental results of source power dependency in sputter film formation according to the embodiment.
Fig. 7 is a diagram for explaining sputtering of a target according to the embodiment.
Fig. 8 is a graph showing experimental results of dc voltage dependence and plasma electron density in sputter film formation according to the embodiment.
Fig. 9 is a diagram for explaining a parallel magnetic field and sputtering in the sputtering film forming apparatus according to the embodiment.
Fig. 10 is a flowchart showing a sputtering film formation process according to the embodiment.
Detailed Description
The manner in which the present disclosure is implemented will be described below with reference to the accompanying drawings. The same reference numerals are given to the same structural parts in the drawings, and duplicate explanation may be omitted.
[ sputtering film Forming apparatus ]
First, a sputtering film forming apparatus 10 according to an embodiment will be described. Fig. 1 is a cross-sectional view showing a sputter film forming apparatus 10 according to an embodiment. The sputter film forming apparatus 10 shown in fig. 1 can be used when forming an aluminum oxide (AlO) film, an oxide semiconductor (IGZO) film, or the like on a rectangular substrate, for example, a glass substrate for an FPD (hereinafter, referred to as a substrate g.) using plasma. Here, examples of the FPD include a Liquid Crystal Display (LCD), an electroluminescence (Electro Luminescence; EL) display, and a Plasma Display Panel (PDP). However, the substrate is not limited to the glass substrate for FPD.
The sputter film forming apparatus 10 has a sealed main body container 1 having a square tubular shape and made of a conductive material, for example, aluminum whose inner wall surface is anodized. The main body container 1 is assembled so as to be detachable, and is electrically grounded via a grounding wire 1a.
The main body container 1 is divided into an antenna chamber 3 and a processing container 4 in the vertical direction by a rectangular metal window 2 formed to be insulated from the main body container 1. The metal window 2 forms the top wall of the process vessel 4. The metal window 2 is made of, for example, a non-magnetic material and a conductive metal such as aluminum or an aluminum-containing alloy.
A support plate 5 protruding toward the inside of the main body container 1 is provided between the side wall 3a of the antenna chamber 3 and the side wall 4a of the processing container 4. The support plate 5 is made of a conductive material, preferably a metal such as aluminum.
The metal window 2 is constituted by a plurality of divided windows 2a to 2d electrically insulated from each other by an insulating member 7. The divided windows 2a to 2d are supported by the support plate 5 via an insulating member 7. The metal window 2 is suspended from the top of the main body container 1 by a plurality of suspension rods (not shown). Fig. 1 is a diagram schematically showing a division method of the metal window 2, and is not a diagram showing an actual division method. Various ways of dividing the metal window 2 will be described later.
The support plate 5 has a plurality of gas supply holes 21a formed therein. The gas supply portion 20 is connected to a plurality of gas supply holes 21a via a gas supply pipe 21. The gas supply unit 20 supplies a process gas containing a source gas for generating plasma. The process gas is introduced into the process container 4 through the gas supply pipe 21 from the plurality of gas supply holes 21a. A gas space (not shown) may be provided inside the metal window 2 and connected to the gas supply pipe 21 to supply gas.
An antenna unit 40 is provided in the antenna chamber 3 above the metal window 2, and the antenna unit 40 has an inductively coupled antenna 13 disposed so as to face the metal window 2 and annularly surround the same. As will be described later, the inductively coupled antenna 13 is made of a conductive material such as copper, for example, and is disposed apart from the metal window 2 by a spacer (not shown) made of an insulating material.
The inductively coupled antenna 13 of the antenna unit 40 is connected to the first high-frequency power supply 18 via the feeder line 16 and the matcher 17. During the plasma process (sputter film forming process), high-frequency power (hereinafter, also referred to as source power) of, for example, 13.56MHz is supplied to the inductively coupled antenna 13 via the feeder line 16 extending from the first high-frequency power supply 18. The loop current is induced in the divided windows 2a to 2d of the metal window 2 by the induced electric field formed by the inductively coupled antenna 13. Thereby, an induced electric field is formed in the processing container 4 by the loop current caused by the divided windows 2a to 2d of the metal window 2. The inductive electric field is used to generate inductively coupled plasma by plasmatizing the process gas supplied from the gas supply hole 21a in the plasma generation space S located immediately below the metal window 2 in the process container 4.
The metal window 2 has a first face and a second face. The lower surface 22a of the metal window 2 is a first surface, and the upper surface 22b of the metal window 2, which is the surface opposite to the first surface, is a second surface. The first face constitutes the top face of the process vessel 4. On the second surface side, an inductively coupled antenna 13 is disposed separately from the metal window 2 for generating plasma in the processing container 4. The target T is bonded to the lower surface 22a of the metal window 2 by brazing with indium, or is fixed to the metal window 2 while maintaining electrical conduction between the target T and the metal window 2 by screwing or the like. Since the target T is a consumable item, when it is consumed to a thickness equal to or less than a certain threshold value, replacement is performed, and a new target T is joined to the lower surface 22a of the metal window 2 by brazing, or is fixed to the lower surface 22a of the metal window 2 by screw fixation or the like. The target T is composed of a material corresponding to the film to be formed. In the case of forming the AlO film and the AlN film, the target T may be composed of aluminum. In the formation of SiO 2 In the case of a film and a SiN film, the target T may be composed of silicon. In the case of forming an IGZO film, the target T may be composed of indium (In), gallium (Ga), zinc (Zn), and oxygen (O).
A mounting table 23 facing the first surface is fixed to the bottom of the processing container 4 via an insulating member 24. The mounting table 23 is made of a conductive material, for example, aluminum whose surface is anodized, and the substrate G is mounted on the mounting surface of the mounting table 23. The substrate G is held by an electrostatic chuck (not shown) provided on the mounting surface.
An insulating shield ring 25a is provided on the upper peripheral edge of the mounting table 23, and an insulating ring 25b is provided on the peripheral surface of the mounting table 23. The lift pins 26 used for carrying in and out the substrate G are inserted through the bottom wall of the main body container 1 and the insulating member 24, and pass through the mounting table 23. The lift pins 26 are driven to lift by a lift mechanism (not shown) provided outside the main body container 1, and transfer the substrate G when the substrate G is carried in and carried out.
In order to control the temperature of the substrate G, a temperature control mechanism including a heating unit such as a heater, a refrigerant flow path, and the like, and a temperature sensor (not shown) are provided in the mounting table 23. The piping and wiring for these mechanisms and members are led out of the main body container 1 through the bottom surface of the main body container 1 and the opening 1b provided in the insulating member 24.
A carry-in/carry-out port 27a for carrying in and carrying out the substrate G and a gate valve 27 for opening and closing the carry-in/carry-out port 27a are provided in the side wall 4a of the process container 4. The bottom of the processing container 4 is connected to an exhaust device 30 including a vacuum pump or the like via an exhaust pipe 31. The inside of the processing container 4 is exhausted by the exhaust device 30, and the inside of the processing container 4 is set and maintained in a predetermined vacuum environment (for example, 10mTorr (1.33 Pa)) during plasma processing.
A minute gap (not shown) functioning as a cooling space is formed on the back surface side of the substrate G placed on the stage 23, and a He gas flow path 32 for supplying a He gas of a fixed pressure as a heat transfer gas is provided. By supplying the heat transfer gas to the rear surface side of the substrate G in this manner, it is possible to suppress a temperature rise and a temperature change due to the sputtering film formation process of the substrate G under vacuum.
The sputter film forming apparatus 10 further includes a control unit 100. The control unit 100 is configured by a computer, and includes a CPU, an input device, an output device, a display device, and a storage device that control each component of the plasma processing apparatus. The storage device has a storage medium in which parameters of various processes performed by the plasma processing device and a process recipe, which is a program for controlling the processes performed by the sputtering film forming device 10, are stored. The CPU calls a predetermined processing procedure stored in the storage medium, and causes the plasma processing apparatus to execute a predetermined processing operation based on the processing procedure.
[ Metal Window ]
Next, the metal window 2 will be described in detail. The metal window 2 is connected to dc pulse power supplies 62a and 62b, and the dc pulse power supplies 62a and 62b (also collectively referred to as dc pulse power supplies 62) apply a dc voltage (hereinafter also referred to as dc pulse voltage) of a rectangular wave (pulse wave) of a predetermined Duty (Duty) to the metal window 2. The frequency of the DC pulse voltage may be 5kHz to 150kHz. The dc pulse voltage has two values constituting a rectangular wave, and the two values are controlled to be 0 or a negative dc voltage. Instead of the dc pulse power supply 62, the metal window 2 may be connected to a dc power supply or an ac power supply. When the metal window 2 is connected to a dc power supply, a negative dc voltage is applied to the metal window 2. When the metal window 2 is connected to an ac power source, the ac power source applies an ac voltage of a predetermined frequency (for example, 50 kHz) to the metal window 2. As described above, since the metal window 2 is electrically connected to any one of the dc power source, the dc pulse power source, and the ac power source, the metal window 2 is made of a conductive material. The metal window 2 is made of a nonmagnetic metal. The non-magnetic metal is, for example, aluminum. In the following description, increasing (increasing) the direct current voltage (direct current pulse voltage) applied to the metal window 2 means increasing (increasing) the absolute value of the direct current voltage (direct current pulse voltage).
A Low Pass Filter (LPF) 61 is provided between the metal window 2 and the dc pulse power supplies 62a and 62b so that the high frequency power from the first high frequency power supply 18 is not transmitted to the dc pulse power supplies 62a and 62b. According to this configuration, the high-density plasma is generated in the processing container 4 using the inductively coupled antenna 13 and the metal window 2, and ions in the high-density plasma are attracted to the metal window 2 by applying a dc pulse voltage to the metal window 2, so that reactive sputtering can be performed.
Fig. 2 is a diagram for explaining generation of inductively coupled plasma using the metal window 2. As shown in fig. 2By means of a high-frequency current I flowing through an inductively coupled antenna 13 RF To generate an induced current at the upper surface of the metal window 2. The induced current flows only in the surface portion of the metal window 2 due to the skin effect, but the metal window 2 is insulated from the support plate 5 and the main body container 1. Therefore, if the planar shape of the inductively coupled antenna 13 is linear, the induced current flowing through the upper surface of the metal window 2 flows to the side surface of the metal window 2, and then the induced current flowing through the side surface flows to the lower surface of the metal window 2, and returns to the upper surface of the metal window 2 again through the side surface of the metal window 2, thereby generating an eddy current I ED . By doing so, an eddy current I circulating from the upper surface to the lower surface is generated in the metal window 2 ED . Eddy current I of the cycle ED The current flowing through the lower surface of the metal window 2 generates an induced electric field I in the processing vessel 4 P By the induced electric field I P A plasma of the process gas is generated.
On the other hand, in the case where the inductively coupled antenna 13 is provided so as to circumferentially surround in the plane corresponding to the metal window 2, when a single pure plate is used as the metal window 2, eddy current does not flow on the lower surface of the metal window 2, and plasma is not generated. That is, eddy current I generated on the upper surface of metal window 2 by inductively coupled antenna 13 ED Only on the upper surface of the metal window 2, eddy current I ED Not to the lower surface of the metal window 2. Accordingly, the metal window 2 has various structures as described below, and eddy current is caused to flow to the lower surface of the metal window 2 to generate a desired induced electric field.
[ Structure of Metal Window ]
In the first embodiment, the metal window 2 is divided into a plurality of divided regions, and the divided regions are insulated from each other. Thereby, eddy current I ED Flows through the lower surface of the metal window 2. That is, by dividing the metal window 2 into a plurality of metal windows insulated from each other, the induced current that reaches the side surface flows through the upper surface of the divided metal window 2 (divided window), and a circulating eddy current I that flows from the side surface to the lower surface and flows again to the side surface and returns to the upper surface is generated ED . Therefore, the metal window 2 is divided into a plurality of divided windows. Next, the metal will be describedSeveral divided examples of the window 2 and an arrangement of the inductively coupled antennas 13.
Fig. 3 is a top view of the metal window 2 and the inductively coupled antenna 13 according to the embodiment. The metal window 2 has a rectangular shape having long sides and short sides corresponding to the substrate G. In fig. 3 (a), in the inductive coupling antenna 13, a plurality of antenna segments 131, 132, 133 each constituted by an annular rectangular coil antenna are provided so as to surround the metal window 2. Each of the annular rectangular coil antennas constituting the plurality of antenna segments 131, 132, 133 may be formed in a frame shape by spirally winding one antenna lead (not shown), or may be formed in a frame shape by spirally winding two or four antenna leads symmetrically with each other. Thus, in this example, the rectangular metal window 2 is divided substantially radially toward each corner of the metal window 2 so as to uniformly form an induced electric field along the lower surface 22a of the metal window 2. Thereby, the metal window 2 is divided into four divided windows 2a to 2d. Of the four divided windows 2a to 2d, the divided window on the long side is a trapezoid, and the divided window on the short side is a triangle. These trapezoids and triangles are constructed as: the height of the trapezoid with the long side as the base is the same as the height of the triangle with the short side as the base. The divided windows 2a to 2d are insulated from each other via an insulating member 7.
As an example of the inductively coupled antenna 13, a plurality of antenna segments each including a loop rectangular coil antenna are arranged.
In fig. 3 (b), as shown in fig. 1, two dc pulse power supplies 62a and 62b are provided. The dc pulse power supply 62a is connected to the divided windows 2a and 2b, and supplies a dc pulse voltage to the divided windows 2a and 2b. The dc pulse power supply 62b is connected to the divided windows 2c and 2d, and supplies dc pulse voltages to the divided windows 2c and 2d. In fig. 3 (b) and (c), the low-pass filter 61 is not shown.
In fig. 3 (c), the dc pulse power supply 62 is connected to the divided windows 2a to 2d, and supplies dc pulse voltages to the divided windows 2a to 2d. For example, when the outside plasma is weak, the in-plane distribution uniformity of the film formation can be achieved by making the duty ratio of the dc voltage applied to the divided windows 2c, 2d larger than the duty ratio of the dc voltage applied to the divided windows 2a, 2b (i.e., extending the time during which the negative dc voltage of the two values of the pulse voltage is applied). Therefore, the in-plane distribution of the attraction of ions in the plasma can be changed according to the area of the division window. In this case, one dc pulse power supply 62 may be provided, and the number of dc pulse power supplies can be reduced.
Fig. 4 is a top view of the metal window 2 and the inductively coupled antenna 13 according to the embodiment, and is another example of fig. 3. In this example, the metal window 2 is divided into six rectangular divided windows 2e to 2j. The division windows 2e to 2j are connected to any one of the dc pulse power supplies 62c, 62d, 62e via the low-pass filter 61. The dc pulse power supply 62c is connected to the divided windows 2e and 2f, and supplies dc pulse voltages to the divided windows 2e and 2 f. The dc pulse power supply 62d is connected to the divided windows 2g and 2h, and supplies dc pulse voltages to the divided windows 2g and 2 h. The dc pulse power supply 62e is connected to the divided windows 2i and 2j, and supplies dc pulse voltages to the divided windows 2i and 2j.
As shown in fig. 4, the inductively coupled antenna 13 may be constituted by only a parallel antenna. The parallel antenna generates an induced electric field that contributes to the generation of plasma, and has rectangular regions formed so as to face the metal window 2 and face the substrate G, and these rectangular regions are divided into linear or lattice-like plasma control regions. The antenna segments 134 forming a part of the rectangular region are arranged in the divided regions, and the multi-split parallel antenna is configured such that all of the antenna leads in the plurality of antenna segments 134 are parallel.
As shown in fig. 5, the antenna segment 134 of fig. 4 is constituted by a vertically wound rectangular coil antenna constituted by spirally winding an antenna wire 135 made of a conductive material, for example, copper or the like, in a vertical direction, which is a direction intersecting the substrate G (metal window 2), for example, in a direction orthogonal thereto. High-frequency power is supplied from the first high-frequency power source 18 to each of the vertically wound rectangular coil antennas.
In fig. 4, five antenna segments 134 are arranged across the two division windows 2e, 2f in the longitudinal direction of the division windows 2e, 2 f. Similarly, five antenna segments 134 are arranged across the two division windows 2g, 2h and five antenna segments 134 are arranged across the two division windows 2i, 2j.
The vertically wound rectangular coil antenna is not limited to the antenna segment 134 being arranged linearly in the longitudinal direction of each of the divided windows shown in fig. 4, and may be arranged in a lattice shape. For example, the antenna segment 134 may be divided into two 4 division types in the vertical and horizontal directions, three 9 division types in the vertical and horizontal directions, and five 25 division types in the vertical and horizontal directions or more, and the vertically wound rectangular coil antennas may be arranged in a lattice form in each division window.
The antenna segments 134 formed of the vertically wound rectangular coil antenna are arranged in a straight line or a lattice shape in this way, so that the directions of the induced electric fields (high-frequency currents) of the antenna segments 134 are all the same. Thus, there is no area where the induced electric fields cancel each other as in the case where the loop rectangular coil antennas are arranged in parallel. Therefore, the efficiency is high and the uniformity of plasma can be improved as compared with the case where the annular rectangular coil antennas are arranged in parallel.
In addition, in the region of the metal window 2 corresponding to the inductively coupled antenna 13, the relationship between the number of divisions of the metal window 2 and the number of divisions of the inductively coupled antenna 13 (the number of antenna segments) is arbitrary. However, when a bipolar dc pulse power source is used as the dc pulse power source, the number of divisions of the metal window needs to be made even.
According to the sputter film forming apparatus 10 described above, the metal window 2 functions as follows: the plasma is formed in the processing chamber 4 by the induction field caused by the inductively coupled antenna 13. In addition, the metal window 2 functions as follows: ions are attracted to a target T for performing a sputtering film formation process on a substrate G.
According to this structure, the high-density plasma is generated in the processing container 4 using the inductively coupled antenna 13 and the metal window 2, and ions are attracted by applying a dc pulse voltage to the metal window 2, so that reactive sputtering can be performed by using the high-density plasma. By depositing the sputtered particles that have escaped from the target T by sputtering on the substrate G, it is possible to form AlO film, alN film, siO film, siN film, tiN film, IGZO film, or the like.
The plasma is formed by an electromagnetic field generated by supplying source power to the inductively coupled antenna 13. Sputtering of the target is performed by applying a dc pulse voltage to the metal window 2 to which the target T is attached, thereby attracting ions. Thus, according to the sputter film forming device 10 of the present disclosure, the formation of plasma and the attraction of ions can be independently controlled. Further, the plasma density is increased by using the magnetic field and the dc electric field formed by the inductively coupled antenna 13, and the following advantages are obtained: since the magnetic field formed by the inductively coupled antenna 13 is an alternating magnetic field, the target can be uniformly sputtered without causing a shift in plasma generated when using a static magnetic field and a direct current electric field.
In addition, the metal window 2 itself may be used as a target. In addition, the dc voltage applied to the target is described by way of example in the present disclosure, but the present disclosure is not limited thereto, and the dc voltage may be a continuous dc voltage or an ac voltage. The inductively coupled antenna 13 may be configured such that a plurality of antenna segments formed by vertically wound rectangular coil antennas are arranged in a straight line or a lattice shape. The inductive coupling antenna 13 may be configured by concentrically arranging a plurality of loop rectangular coil antennas or may be configured by combining a vertically wound rectangular coil antenna and a loop rectangular coil antenna.
Next, four effects of the sputter film forming apparatus 10 of the present disclosure will be described in order. The four effects are: high film formation rate of high density plasma (effect 1), independent control of source power and dc voltage (effect 2), film formation of IGZO film with few defects (effect 3), and sputtering effect of parallel magnetic field (effect 4). The metal window 2 and the inductively coupled antenna 13 were evaluated according to the structure of fig. 3.
Effect 1: high film formation Rate of high Density plasma ]
By applying a dc pulse voltage to the metal window 2 to generate a dc electric field, a higher film formation rate can be obtained for plasma in which the alternating magnetic field and the dc electric field are densified by the inductive coupling antenna 13. Using the sputtering apparatus 10 of fig. 1, experiments were performed based on the following process conditions.
< process conditions >
Fig. 6 shows the result of forming a transparent AlO film by sputtering a target with a plasma of a mixed gas of argon and oxygen under the above conditions. Fig. 6 is a graph showing experimental results of source power dependency in sputter film formation according to the embodiment.
In fig. 6, the horizontal axis represents the source power from the first high-frequency power source 18, the vertical axis (left) represents the film formation rate (DR) of the AlO film, and the vertical axis (right) represents the Refractive Index (RI) of the AlO film. Accordingly, the film formation rate can be improved by supplying the source power to the inductively coupled antenna 13 and applying the dc pulse voltage to the metal window 2 to increase the plasma density.
In addition, when the source power is increased, plasma having a higher density can be generated, and the film formation rate (DR) and Refractive Index (RI) of the AlO film can be further improved. When the source powers were 1000W, 3000W, and 5000W, the ratios of the film thickness of the bottom portion to the film thickness of the side portion of the AlO film formed in the step portion on the substrate G were 1.00, and 0.95, respectively. That is, the coverage of the AlO film is good regardless of the magnitude of the source power. From the above, it can be seen that: according to the sputter film forming apparatus 10 of the present disclosure, the film forming rate and refractive index can be improved, and further a dense AlO film with good coverage can be formed by sputtering.
The reason why a film with good coverage can be formed by sputtering will be described with reference to fig. 7. Fig. 7 is a diagram for explaining sputtering of the target T in the sputter film forming device 10 according to the embodiment. When a negative dc voltage is applied to the metal window 2, ions in plasma formed from argon gas or the like, for example, argon ions (ar+) are attracted to the metal window 2 and collide with the target T, so that Al ions (al+) escape from the target T formed of aluminum as sputtered particles.
Further, oxidation and nitridation of the film can be promoted by high-density plasma generated by supplying source power, so that a dense AlO film can be formed. In the inductively coupled antenna 13 to which source power is supplied, a parallel magnetic field B is generated due to the shape of the antenna segments 131 to 134 shown in fig. 3 to 5. As a result, lorentz force (f=qv×b) is applied, and Al ions (al+) are emitted at a large angle. Thus, an AlO film with good coverage can be formed by sputtering.
Effect 2: independent control of Source Power and DC Voltage
In the sputter film forming apparatus 10, control of applying a dc pulse voltage to the metal window 2 and control of supplying a plasma source to the inductively coupled antenna 13 can be performed independently. Therefore, a film with few defects can be formed. Using the sputtering apparatus 10 of fig. 1, experiments were performed based on the following process conditions.
< process conditions >
Fig. 8 shows the result of forming an AlO film after sputtering the target T with a plasma of a mixed gas of argon and oxygen under the above conditions. Fig. 8 is a graph showing experimental results of dc voltage dependence and plasma electron density in sputter film formation according to the embodiment.
The horizontal axis of fig. 8 (a) represents the direct current pulse voltage (DC), the vertical axis (left) represents the film formation rate (DR) of the AlO film, and the vertical axis (right) represents the Refractive Index (RI) of the AlO film. Accordingly, when the dc pulse voltage applied to the metal window 2 is increased, the probability of collision of ions in the plasma, for example, argon ions, with the target T can be increased, and the sputtering force can be increased, and therefore the film formation rate (DR) can be increased. On the other hand, the Refractive Index (RI) can be maintained even if the dc pulse voltage is increased.
The horizontal axis of FIG. 8 (b) represents the source power, and the vertical axis represents the plasma electron density (Ne density [ in/cm ] 3 ]). Accordingly, when the line a in the case where the dc pulse voltage is 0V is compared with the line B in the case where the dc pulse voltage is-300V, the plasma electron density Ne is hardly affected by the value of the dc pulse voltage. That is, it can be seen that: plasma electricThe sub-density Ne depends on the source power and not on the dc pulse voltage.
From the above, it can be demonstrated that: by independently performing control of applying a dc pulse voltage to the metal window 2 and control of applying a plasma source to the inductively coupled antenna 13, it is possible to generate high-density plasma and form an insulating film or IGZO film with few defects.
Effect 3: film formation with few defects ]
For example, when the dc voltage applied to the metal window 2 is increased, ions in the plasma can be strongly attracted to the target T. Therefore, the amount of sputtered particles emitted from the target T can be increased, and the film formation rate can be improved. On the other hand, when the dc voltage applied to the metal window 2 is increased, the energy of the sputtered particles that have escaped is also increased, and the sputtered particles are forcefully bombarded into the film, which may cause defects in the film. In the sputter film forming apparatus 10 of the present disclosure, the direct current voltage and the source power can be independently controlled. Therefore, for example, the direct current voltage applied to the metal window 2 is reduced and the source power is increased to, for example, about 5000W, so that an IGZO film with few defects is formed. Thus, a high-density plasma is generated to increase the film formation rate, and the direct-current voltage is controlled to reduce the attraction of ions in the plasma, whereby an IGZO film with few defects can be formed.
Effect 4: sputtering Effect of parallel magnetic field
Fig. 9 is a diagram for explaining a parallel magnetic field and sputtering formed below the metal window 2 of the sputtering film forming apparatus 10 according to the embodiment. Fig. 9 (a) shows a parallel magnetic field B1 below the metal window 2 (target T) when sputtering is performed by the sputtering film forming apparatus 10 according to the embodiment, and fig. 9 (B) shows a magnetic field B2 below the metal window 2 (target T) when sputtering is performed by the magnetron sputtering apparatus according to the reference example.
In the magnetron sputtering film forming apparatus of the reference example shown in fig. 9 (B), a high-density plasma is formed by using a direct current electric field E caused by a direct current voltage applied to the target T and a magnetic field B2 formed by a magnet 91 located on the rear surface of the target T, and the target T is sputtered, thereby forming a film. In this sputter film formation, electrons in the plasma are surrounded by the magnetic field B2, thereby generating high-density plasma and improving the film formation rate (sputter rate). However, the sputtering region of the target T is offset by the magnetic field B2 between the magnets 91 of the N pole and the magnets 91 of the S pole, so that the target T between the magnets 91 is annularly shaved off. Thus, the target T between the magnets 91 is consumed more than the target T below the magnets 91. The replacement timing is advanced due to uneven use of the target T, and the utilization efficiency of the target T is poor. In addition, the portion of the target T under the magnet 91, which is not removed, may be prone to deposition of reaction by-products and other substances, which may become a source of particles.
In contrast, in the sputter film forming apparatus 10 of the present disclosure, the plurality of antenna segments of the inductively coupled antenna 13 are used, and the plurality of antenna segments of the inductively coupled antenna 13 are arranged so that the antenna leads facing the metal window 2 are parallel to the metal window 2 and in a loop shape, or so that the antenna leads facing the metal window 2 are all parallel.
As a result, as shown in fig. 9 (a), a parallel magnetic field B1 having a wide width is formed in the horizontal direction below the target T. Therefore, the sputter film forming apparatus 10 does not have a portion where the magnetic field is locally strengthened as in the reference example shown in fig. 9 (b). Therefore, the target T can be uniformly shaved off by the dc electric field E caused by the dc voltage applied to the metal window 2 and the parallel magnetic field B1 widely formed under the target T, and a film with a good coverage can be formed. Since the target T can be uniformly shaved off, the utilization efficiency of the target T increases, and the life of the target T can be prolonged.
[ sputtering film Forming method ]
Finally, a sputter film forming method performed in the sputter film forming apparatus 10 of the present disclosure will be described with reference to fig. 10. Fig. 10 is a flowchart showing a sputtering film formation process according to the embodiment. The sputter film forming process is controlled by the control unit 100 and is executed by the sputter film forming apparatus 10.
When the present process starts, in step S1, the control unit 100 opens the gate valve 27, and carries in the substrate G from the carry-in/out port 27a to place the substrate G on the stage 23. Thereby, the preparation of the substrate G is completed.
Next, in step S3, the control unit 100 supplies the process gas from the gas supply unit 20 into the process container 4. Next, in step S5, the control unit 100 supplies high-frequency power from the first high-frequency power supply 18 to the inductively coupled antenna 13 to generate plasma in the processing container 4.
Next, in step S7, the control unit 100 applies a dc pulse voltage from the dc pulse power supply 62 to the metal window 2 to attract ions toward the metal window 2. Next, in step S9, the target T is sputtered with ions, and sputtered particles that have escaped from the target T are deposited on the substrate G. Thus, a desired film such as an AlO film is formed on the substrate.
According to the above sputter film forming method, a desired film such as an AlO film can be formed by reactive sputtering by generating high-density plasma using the sputter film forming apparatus 10 of the present disclosure. Further, a desired film such as an IGZO film having high mobility and high reliability can be formed by independently controlling the source power supplied from the first high-frequency power supply 18 to the inductively coupled antenna 13 and the dc pulse voltage applied from the dc pulse power supply 62 to the metal window 2.
As described above, according to the sputter deposition apparatus and the sputter deposition method of the present embodiment, high-density plasma can be formed by the dc pulse voltage applied to the metal window, and the target T can be efficiently sputtered, thereby improving the deposition rate.
It should be understood that the sputter deposition apparatus and the sputter deposition method according to the embodiments disclosed herein are illustrative in all respects and not restrictive. The embodiments can be modified and improved in various ways without departing from the spirit of the appended claims. The matters described in the above-described embodiments can be structured otherwise within the range of no contradiction, and can be combined within the range of no contradiction.
Description of the reference numerals
10: a sputtering film forming device; 1: a main body container; 2: a metal window; 2a, 2b, 2c, 2d: a dividing window; 3: an antenna chamber; 4: a processing container; 13: an inductively coupled antenna; 18: a first high-frequency power supply; 20: a gas supply unit; 22a: the lower surface of the metal window; 22b: the upper surface of the metal window; 23: a mounting table; 62: a DC pulse power supply; t: and (3) a target material.
Claims (9)
1. A sputtering film forming apparatus includes:
a processing container having a stage for placing a substrate thereon;
a metal window which is formed of a non-magnetic metal, has a first surface that forms a top surface of the processing container, and faces the mounting table;
an inductively coupled antenna, which is disposed separately from a second surface of the metal window on the opposite side of the first surface of the metal window, for generating plasma in the processing container;
a high frequency power supply connected to the inductively coupled antenna;
any one of a direct current power supply, a direct current pulse power supply and an alternating current power supply which are connected with the metal window; and
and a gas supply unit configured to supply a process gas for generating the plasma into the process container.
2. The sputtering film forming apparatus according to claim 1, wherein,
the metal window has a function of forming the plasma in the processing container with an induced electric field caused by the inductively coupled antenna as a medium, and a function as a target for performing a sputtering process on the substrate.
3. A sputtering film forming apparatus includes:
a processing container having a stage for placing a substrate thereon;
a metal window which is formed of a non-magnetic metal, has a first surface that forms a top surface of the processing container, and faces the mounting table;
an inductively coupled antenna, which is disposed separately from a second surface of the metal window on the opposite side of the first surface of the metal window, for generating plasma in the processing container;
a target material arranged on the first surface;
a high frequency power supply connected to the inductively coupled antenna;
any one of a direct current power supply, a direct current pulse power supply and an alternating current power supply which are connected with the metal window; and
and a gas supply unit configured to supply a process gas for generating the plasma into the process container.
4. The sputtering film forming apparatus according to any one of claim 1 to 3, wherein,
the metal window is composed of a plurality of divided windows electrically insulated from each other.
5. The sputtering film formation apparatus according to any one of claims 1 to 4, wherein,
a plurality of antenna segments are disposed at the inductively coupled antenna.
6. The sputtering film forming apparatus according to claim 5, wherein,
in the inductively coupled antenna, a plurality of the antenna segments as an annular rectangular coil antenna are concentrically arranged.
7. The sputtering film forming apparatus according to claim 5, wherein,
in the inductively coupled antenna, a plurality of the antenna segments as the vertically wound rectangular coil antennas are arranged in a lattice or linear form, and antenna leads constituting bottoms of the vertically wound rectangular coil antennas of the plurality of the antenna segments are arranged in parallel with each other.
8. The sputtering film formation apparatus according to any one of claims 1 to 7, wherein,
the non-magnetic metal is aluminum.
9. A sputter film forming method, which is a sputter film forming method performed in the sputter film forming apparatus according to any one of claims 1 to 8, the sputter film forming method comprising the steps of:
placing a substrate on a placement table;
supplying a process gas from a gas supply unit into the process container;
supplying high-frequency power from a high-frequency power source to an inductively coupled antenna to generate plasma in the processing container;
applying a dc voltage, a dc pulse voltage, or an ac voltage from any one of a dc power supply, a dc pulse power supply, and an ac power supply connected to a metal window, thereby attracting ions from the plasma to the metal window; and
and depositing sputtering particles sputtered by the ions on the substrate.
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| JP2021171836A JP2023061729A (en) | 2021-10-20 | 2021-10-20 | Sputtering film deposition apparatus and sputtering film deposition method |
| JP2021-171836 | 2021-10-20 |
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| CN1934285A (en) * | 2004-03-26 | 2007-03-21 | 日新电机株式会社 | Silicon film forming equipment |
| KR20110028416A (en) * | 2009-09-12 | 2011-03-18 | 위순임 | Sputtering apparatus using icp |
| US20120247949A1 (en) * | 2011-03-30 | 2012-10-04 | Takashi Sakuma | Film forming method, resputtering method, and film forming apparatus |
| CN106715750A (en) * | 2014-09-26 | 2017-05-24 | 日新电机株式会社 | Deposition method and sputtering device |
| CN111430210A (en) * | 2019-01-10 | 2020-07-17 | 东京毅力科创株式会社 | Inductively coupled plasma processing apparatus |
| JP2021001375A (en) * | 2019-06-21 | 2021-01-07 | 日新電機株式会社 | Sputtering apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090116430A (en) | 2008-05-07 | 2009-11-11 | 김재길 | Book for studying english by principal of creation |
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- 2022-10-11 KR KR1020220129293A patent/KR20230056593A/en unknown
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1934285A (en) * | 2004-03-26 | 2007-03-21 | 日新电机株式会社 | Silicon film forming equipment |
| KR20110028416A (en) * | 2009-09-12 | 2011-03-18 | 위순임 | Sputtering apparatus using icp |
| US20120247949A1 (en) * | 2011-03-30 | 2012-10-04 | Takashi Sakuma | Film forming method, resputtering method, and film forming apparatus |
| CN106715750A (en) * | 2014-09-26 | 2017-05-24 | 日新电机株式会社 | Deposition method and sputtering device |
| CN111430210A (en) * | 2019-01-10 | 2020-07-17 | 东京毅力科创株式会社 | Inductively coupled plasma processing apparatus |
| JP2021001375A (en) * | 2019-06-21 | 2021-01-07 | 日新電機株式会社 | Sputtering apparatus |
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| KR20230056593A (en) | 2023-04-27 |
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