CN115986567A - Double-end-face light-emitting laser and preparation method thereof - Google Patents
Double-end-face light-emitting laser and preparation method thereof Download PDFInfo
- Publication number
- CN115986567A CN115986567A CN202111207058.XA CN202111207058A CN115986567A CN 115986567 A CN115986567 A CN 115986567A CN 202111207058 A CN202111207058 A CN 202111207058A CN 115986567 A CN115986567 A CN 115986567A
- Authority
- CN
- China
- Prior art keywords
- waveguide layer
- layer
- sio
- grating
- upper waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The invention provides a double-end-face light-emitting laser and a preparation method thereof, wherein the double-end-face light-emitting laser comprises: a substrate; the back grating area is formed on the substrate, and a phase area, a gain area, a front grating area and a modulator area are symmetrically distributed on two sides of the back grating area from near to far in sequence; the back grating area and the front grating area are composed of grating layers, and the grating layers of the back grating area and the front grating area are provided with gratings. The invention realizes the effect of doubling the speed and wavelength tuning performance of the laser and provides a new solution of the light emitting chip for the optical communication system.
Description
Technical Field
The invention relates to the field of semiconductor photoelectron integrated devices, relates to a laser, and particularly relates to a double-end-face light-emitting laser and a preparation method thereof.
Background
With the rapid development of 5G networks, optical fiber communication systems put higher demands on the performance of optical transmitting chips, wherein high speed and multi-wavelength coverage are two important development directions to meet the needs of the internet. The speed of the light emitting chip is restricted by physical mechanism and process precision, so that the speed is more and more difficult to improve, and in order to solve the speed improvement, a bandwidth expansion technology, an external modulation technology and the like are often adopted; the multi-wavelength coverage is to fully utilize the optical fiber resources of the existing network and meet different application scenes of the internet, and the existing multi-wavelength scheme is realized by connecting a plurality of fixed wavelength lasers in parallel or by adopting a wavelength tunable laser. The use of these techniques presents a number of problems: the integration degree of the chip becomes large, the size becomes large, the power consumption becomes high, the cost increases, and the like.
Disclosure of Invention
Technical problem to be solved
In view of the above, the present invention provides a dual-ended light-emitting laser, and a method for manufacturing the dual-ended light-emitting laser, which are used to solve at least some of the above problems.
(II) technical scheme
One aspect of the present invention provides a dual-end-surface light emitting laser, including: a substrate; the back grating area is formed on the substrate, and a phase area, a gain area, a front grating area and a modulator area are symmetrically distributed on two sides of the back grating area from near to far in sequence; the grating layers of the back grating area and the front grating area are provided with gratings.
Optionally, the modulator region is 10-100 nm shorter than the bandgap wavelength of the gain region.
Optionally, the back grating region, the front grating region and the phase region are shorter than the band gap wavelength of the gain region by 90-200 nm.
Optionally, the double-ended light emitting laser further includes: the gain region is composed of a first lower waveguide layer, a first multiple quantum well active region and a first upper waveguide layer which are sequentially overlapped on the substrate; the modulator region consists of a second lower waveguide layer, a second multi-quantum well active region and a second upper waveguide layer which are sequentially stacked on the substrate; the inverted-platform shallow ridge waveguide is formed on the first upper waveguide layer, the second upper waveguide layer and the grating layer and comprises a cladding layer and an electric contact layer from bottom to top; the P electrode is formed on the surface of the inverted shallow ridge waveguide; and the N electrode is formed at the bottom of the substrate.
Optionally, the grating layer thickness is a total thickness of the first lower waveguide layer, the first multiple quantum well active region, and the first upper waveguide layer.
The invention also provides a preparation method of the double-end-face light-emitting laser, which comprises the following steps: sequentially forming a first lower waveguide layer, a first multiple quantum well active region and a first upper waveguide layer on a substrate; preparing first SiO on the first upper waveguide layer 2 A strip structure; etching away the first SiO 2 The first lower waveguide layer, the first multiple quantum well active region and the first upper waveguide layer which are covered by the strip-shaped structure are in butt joint growth with the second lower waveguide layer, the second multiple quantum well active region and the second upper waveguide layer; removing the first SiO 2 The strip structure is used for preparing second SiO on the first upper waveguide layer and the second upper waveguide layer 2 A strip structure; etching away the second SiO 2 The first lower waveguide layer, the first multiple quantum well active region, the first upper waveguide layer, the second lower waveguide layer, the second multiple quantum well active region and the second upper waveguide layer are covered by the strip-shaped structure and are butted with the growth grating layer; preparing a grating on the surface of the grating layer; forming a cladding and an electric contact layer on the surfaces of the first upper waveguide layer, the second upper waveguide layer and the grating layer, and preparing a layer of inverted shallow ridge waveguide by using the cladding and the electric contact layer; photoetching the electric contact layer and carrying out ion implantation; and preparing a P electrode on the inverted shallow ridge waveguide and manufacturing an N electrode at the bottom of the substrate.
Optionally, preparing a first SiO in the first upper waveguide layer 2 The bar structure includes: growing SiO on the first upper waveguide layer 2 A layer;
preparing first SiO in gain region and gain region by photoetching and wet etching 2 A strip-shaped structure.
Optionally, removing the first SiO 2 The strip structure is used for preparing second SiO on the first upper waveguide layer and the second upper waveguide layer 2 The bar structures include: etching to remove the first SiO 2 A strip structure; growing SiO on the second upper waveguide layer and the first upper waveguide layer 2 A layer; by usingPhotoetching and wet etching to prepare the second SiO in modulator region, gain region and gain region 2 A strip-shaped structure.
Optionally, the first SiO is etched away 2 A first lower waveguide layer, a first multiple quantum well active region and a first upper waveguide layer covered by the stripe structure, and etching to remove the second SiO 2 The first lower waveguide layer, first multiple quantum well active area, first upper waveguide layer, second lower waveguide layer, second multiple quantum well active area and the second upper waveguide layer that the stripe structure covers include: by the use of CH 4 And H 2 Performing RIE etching; after etching, cleaning the substrate by respectively adopting trichloroethylene, acetone and ethanol; by means of H 2 SiO 4 And H 2 O 2 And corroding and etching the defects.
Optionally, the performing the photolithography and the ion implantation on the electrical contact layer comprises: photoetching an isolation trench pattern on the electric contact layer; and etching the electric isolation groove and performing He ion implantation.
(III) advantageous effects
The invention integrates two wavelength tunable electric absorption lasers back to back, shares the distributed Bragg grating area, and emits laser from two end faces, thereby realizing the effect of doubling the speed and wavelength tuning performance, reducing the power consumption of the Bragg grating area, and providing a new solution of a light emitting chip for an optical communication system.
Drawings
Fig. 1 schematically shows a flow chart of a method for manufacturing a double-ended light-emitting laser provided by the present invention;
fig. 2 schematically shows a schematic diagram of step S1 of the method for preparing a double-ended light-emitting laser provided by the present invention;
fig. 3 schematically shows a top view of step S2 of the method for preparing a double-ended light-emitting laser provided by the present invention;
fig. 4 and 5 schematically show a schematic diagram of step S3 of the method for preparing a double-ended light-emitting laser according to the present invention;
fig. 6 schematically illustrates a schematic diagram of step S4 of the method for preparing a double-ended light-emitting laser provided by the present invention;
fig. 7 and 8 schematically show a schematic diagram of step S5 of the method for preparing a double-ended light-emitting laser according to the present invention;
fig. 9 is a schematic diagram schematically illustrating step S6 of the method for preparing a double-ended light-emitting laser according to the present invention;
fig. 10 is a schematic diagram schematically illustrating step S7 of the method for preparing a double-ended light-emitting laser according to the present invention;
fig. 11 is a schematic diagram schematically illustrating step S8 of the method for preparing a double-ended light-emitting laser according to the present invention;
fig. 12 schematically shows a schematic diagram of step S9 of the method for preparing a double-ended light-emitting laser according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments and the accompanying drawings.
Referring to fig. 12, fig. 12 schematically illustrates a structural schematic diagram of a double-ended light-emitting laser provided by the present invention, and the present invention provides a double-ended light-emitting laser, including: a substrate; the back grating area is formed on the substrate, and a phase area, a gain area, a front grating area and a modulator area are symmetrically distributed on two sides of the back grating area from near to far in sequence; the grating layers of the back grating area and the front grating area are provided with gratings; the phase region is made of the same material as the grating layer; the gain region is composed of a first lower waveguide layer, a first multiple quantum well active region and a first upper waveguide layer which are sequentially overlapped on the substrate; the modulator region is composed of a second lower waveguide layer, a second multiple quantum well active region and a second upper waveguide layer which are sequentially stacked on the substrate. As shown in fig. 12, regions 1 and 5 are modulator regions, regions 2 and 6 are rear grating regions, regions 3 and 7 are laser gain regions, regions 4 and 8 are phase regions, and region 9 is a rear grating region, and the regions are distinguished by dotted lines. The thicknesses of the first lower waveguide layer, the first multi-quantum well active region, the first upper waveguide layer, the second lower waveguide layer, the second multi-quantum well active region and the second upper waveguide layer are respectively and independently optimized according to performance; the thickness of the grating layer is the total thickness of the first lower waveguide layer, the first multiple quantum well active region and the first upper waveguide layer.
The double-end-face light-emitting laser integrates two wavelength tunable electric absorption lasers together, shares a distributed Bragg grating area, emits laser from two end faces, and achieves the effect of doubling the speed and wavelength tuning performance.
In one embodiment of the invention, the modulator region is 10-100 nm shorter than the bandgap wavelength of the gain region. The band gap wavelength of the back grating area, the front grating area and the phase area is shorter than that of the gain area by 90-200 nm. The wavelength of the band gap of the modulator is short, reverse bias voltage is applied during working, the red shift of the absorption spectrum is realized, and laser generated by a laser is absorbed; the grating area and the phase area have short band gap wavelength, and laser generated by the laser passes through the areas and is not absorbed.
In another embodiment of the present invention, the double-ended light-emitting laser further includes: the inverted-platform shallow ridge waveguide is formed on the first upper waveguide layer, the second upper waveguide layer and the grating layer and comprises a cladding layer and an electric contact layer from bottom to top; the P electrode is formed on the surface of the inverted shallow ridge waveguide; and the N electrode is formed at the bottom of the substrate.
Referring to fig. 1, fig. 1 schematically shows a flowchart of a method for manufacturing a dual-end-surface light-emitting laser according to another aspect of the present invention, including:
s1, sequentially forming a first lower waveguide layer 11, a first multiple quantum well active region 12 and a first upper waveguide layer 13 on a substrate 10;
s2, preparing first SiO on the first upper waveguide layer 13 2 A strip-shaped structure 14;
s3, etching off the first SiO 2 The first lower waveguide layer 11, the first multiple quantum well active region 12 and the first upper waveguide layer 13 covered by the stripe structure 14 are in butt joint growth with a second lower waveguide layer 15, a second multiple quantum well active region 16 and a second upper waveguide layer 17;
s4, removing the first SiO 2 Stripe structures 14 and second SiO deposited on the first upper waveguide layer 13 and the second upper waveguide layer 17 2 A strip-shaped structure 18;
S5etching to remove the second SiO 2 The first lower waveguide layer 11, the first multiple quantum well active region 12, the first upper waveguide layer 13, the second lower waveguide layer 15, the second multiple quantum well active region 16 and the second upper waveguide layer 17 which are covered by the stripe structure 18 are butted with a growth grating layer 19;
s6, preparing a grating 20 on the surface of the grating layer 19;
s7, forming a cladding layer 21 and an electric contact layer 22 on the surfaces of the first upper waveguide layer 13, the second upper waveguide layer 17 and the grating layer 19, and preparing a layer-inverted shallow ridge waveguide by using the cladding layer 21 and the electric contact layer 22;
s8, photoetching is carried out on the electric contact layer 22, and ion implantation is carried out;
s9, preparing a P electrode 24 on the inverted shallow ridge waveguide and manufacturing an N electrode 25 at the bottom of the substrate 10.
Wherein, step S2 includes: growing SiO on the first upper waveguide layer 13 2 A layer; preparing first SiO in gain region 3 and gain region 7 by photoetching and wet etching 2 The strip-shaped structures 14.
Step S4 comprises the following steps: etching to remove the first SiO 2 A bar-shaped structure 14; growing SiO on the second upper waveguide layer 17 and the first upper waveguide layer 13 2 A layer; preparing second SiO in modulator region 1, modulator region 5, gain region 3 and gain region 7 by photolithography and wet etching 2 A strip-shaped structure 18.
The steps S3 and S5 include: by CH 4 And H 2 Performing RIE etching; after etching, cleaning the substrate 10 by respectively adopting trichloroethylene, acetone and ethanol; by the use of H 2 SiO 4 And H 2 O 2 And etching the etched defect.
Step S8 includes: photoetching an isolation trench pattern on the electric contact layer 22; and etching the electric isolation groove and performing He ion implantation.
The following description will be given with reference to specific examples.
S1, selecting an N-type indium phosphide substrate 10, and growing an InGaAsP lower waveguide layer 11 (the band gap wavelength is 1200 nm), a multi-quantum well active region 12 (the band gap wavelength is 1550 nm) and an upper waveguide layer 13 (the band gap wavelength is 1200 nm) on the substrate in sequence by utilizing Metal Organic Chemical Vapor Deposition (MOCVD). The growth temperature is 680 ℃, the growth pressure is 100mbar, the thicknesses of the upper waveguide layer and the lower waveguide layer are both 90nm,5 compressive strain well layers are provided, each thickness is 5nm,6 tensile strain barrier layers are provided, each thickness is 9nm, and the multi-quantum well active region 12 is sandwiched by the lower waveguide layer 11 and the upper waveguide layer 13 to form a sandwich structure. As shown in fig. 2.
S2, growing SiO with the thickness of 150nm on the upper waveguide layer 13 2 The growth temperature is 300 ℃, and the growth pressure is 100Pa; and etching to obtain a first SiO 30 μm wide by using a 1 μm thick photoresist mask and a Buffered Oxide Etchant (BOE) 2 The stripe structure 14 is used to protect the laser gain region, and the top view is shown in fig. 3.
S3, etching to remove the InGaAsP material outside the mask of the laser gain area (3 and 7 areas) by adopting an RIE method, wherein the reactive etching pressure is 0.067mbar, the power is 150W, and the reactive gas is CH 4: H 2 = 18: 45, and the etching time was 5 minutes, as shown in fig. 4. Cleaning the substrate 10 with trichloroethylene, acetone, ethanol, respectively, and washing with H 2 SiO 4 And H 2 O 2 Etching off the residual InGaAsP material etched by RIE, spin-drying the substrate, and concentrating in H 2 SiO 4 Soaking in the solution for 20 seconds to perform surface passivation; then washing with deionized water and spin-drying; the InGaAsP lower waveguide layer 15 (the band gap wavelength is 1200 nm), the multiple quantum well active region 16 (the band gap wavelength is 1500 nm) and the upper waveguide layer 17 (the band gap wavelength is 1200 nm) are sequentially grown by MOCVD. The growth temperature is 680 ℃, the growth pressure is 100mbar, the thicknesses of the upper waveguide layer and the lower waveguide layer are both 90nm,5 compressive strain well layers are provided, each layer is 9nm,6 tensile strain barrier layers are provided, and each layer is 5nm, as shown in fig. 5.
S4, etching to remove the first SiO 2 Stripe structures 14, regrowing SiO 2 Layer, etching by photolithography and wet etching a second SiO 20 μm wide in the gain and modulator regions of the laser 2 A bar structure 18, as shown in fig. 6.
S5, etching to remove the second SiO by adopting an RIE method 2 InGaAsP material outside the strip-shaped structure 18, the reactive etching pressure is 0.067mbar, the power is 150W, and the reactive gas is CH 4 ∶H 2 = 18: 45, etch time 5 minutes, as shown in fig. 7. By using trichloro-benzene separatelyCleaning of the substrate 10 with ethylene, acetone, ethanol, H 2 SiO 4 And H 2 O 2 Etching off the residual InGaAsP material etched by RIE, spin-drying the substrate 10, and concentrating in H 2 SiO 4 Soaking in the solution for 20 seconds to perform surface passivation; then washing the mixture by deionized water and spin-drying the mixture; grating regions (2, 6 and 9 regions) and phase regions (4 and 8 regions) grating layers 19 before and after the growth are butt-jointed by MOCVD, inGaAsP material is adopted, the growth temperature is 630 ℃, the growth pressure is 100mbar, and the band gap wavelength (1400 nm) is smaller than the light-emitting wavelength of the laser, as shown in figure 8.
And S6, manufacturing a grating 20 on the surface of the grating layer 19 of the front grating area and the back grating area (2, 6 and 9 areas), as shown in FIG. 9.
S7, growing a P-type Zn-doped InP cladding layer 21 (1500 nm thick) and an InGaAs electric contact layer 22 (200 nm thick) on the surfaces of the first upper waveguide layer 13, the second upper waveguide layer 17 and the grating layer 19 by MOCVD, wherein the growth temperature is 630 ℃, and the growth pressure is 100mbar. Photoetching a 3-micron strip-shaped mask on the cladding 21 and the electric contact layer 22 by using 1-micron photoresist, and sequentially adopting corrosive liquid Br 2 ∶HBr∶H 2 O = 1: 25: 80 (corrosion time 40 seconds) and HCl: H 2 O = 9: 1 (etching time 3 minutes) to fabricate an inverted shallow ridge waveguide structure, and a cross-sectional view is shown in fig. 10.
S8, photoetching an isolation groove pattern on the electric contact layer 22 by using photoresist with the thickness of 3 mu m, and etching by using etching solution H 2 SiO 4 ∶H 2 O 2 ∶H 2 Etching for 10 seconds with O = 3: 1 to etch the electric isolation trench (width 50 μm) between the regions, and performing He ion implantation 23 with implantation energy of 200KeV and implantation dosage of 10 14 cm -2 Electrical isolation is achieved between the functional regions, as shown in fig. 11.
S9, a P-side electrode 24 is formed on the electrode contact layer 22, and an N-side electrode 25 is formed on the bottom of the thinned substrate 10, as shown in fig. 11.
The above embodiments are provided to further explain the objects, technical solutions and advantages of the present invention in detail, it should be understood that the above embodiments are only examples of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A dual-ended light emitting laser, comprising:
a substrate (10);
the rear grating area (9) is formed on the substrate, and phase areas (4, 8), gain areas (3, 7), front grating areas (2, 6) and modulator areas (1, 5) are symmetrically distributed on two sides of the rear grating area (9) from near to far in sequence;
the rear grating area (9) and the front grating areas (2 and 6) are formed by grating layers (19), and gratings (20) are arranged on the surfaces of the grating layers (19).
2. The double-ended light-emitting laser according to claim 1, characterized in that the modulator region (1, 5) is 10-100 nm shorter than the bandgap wavelength of the gain region (3, 7).
3. The double-ended light-emitting laser according to claim 1, wherein the back grating region (9), the front grating regions (2, 6) and the phase regions (4, 8) are shorter by 90-200 nm compared to the bandgap wavelength of the gain regions (3, 7).
4. The two-sided light-emitting laser of claim 1, further comprising:
the gain regions (3 and 7) are composed of a first lower waveguide layer (11), a first multiple quantum well active region (12) and a first upper waveguide layer (13) which are sequentially overlapped on the substrate (10);
the modulator regions (1 and 5) are composed of a second lower waveguide layer (15), a second multi-quantum well active region (16) and a second upper waveguide layer (17) which are sequentially overlapped on the substrate (10);
the inverted-mesa shallow ridge waveguide is formed on the first upper waveguide layer (13), the second upper waveguide layer (17) and the grating layer (19), and comprises a cladding layer (21) and an electric contact layer (22) from bottom to top;
a P electrode (24) formed on the surface of the inverted shallow ridge waveguide;
and the N electrode (25) is formed at the bottom of the substrate (10).
5. The double-ended light-emitting laser according to claim 4, wherein the grating layer (19) has a thickness of the total thickness of the first lower waveguide layer (11), the first multiple quantum well active region (12) and the first upper waveguide layer (13).
6. A method for preparing the double-ended light-emitting laser according to any one of claims 1 to 5, comprising:
sequentially forming a first lower waveguide layer (11), a first multiple quantum well active region (12) and a first upper waveguide layer (13) on a substrate (10);
preparing a first SiO layer on the first upper waveguide layer (13) 2 A strip-shaped structure (14);
etching away the first SiO 2 The first lower waveguide layer (11), the first multiple quantum well active region (12) and the first upper waveguide layer (13) are covered by the stripe structure (14), and a second lower waveguide layer (15), a second multiple quantum well active region (16) and a second upper waveguide layer (17) are grown in an abutting joint mode;
removing the first SiO 2 Stripe structures (14) and preparing a second SiO in said first upper waveguide layer (13) and said second upper waveguide layer (17) 2 A strip-shaped structure (18);
etching away the second SiO 2 The first lower waveguide layer (11), the first multiple quantum well active region (12), the first upper waveguide layer (13), the second lower waveguide layer (15), the second multiple quantum well active region (16) and the second upper waveguide layer (17) which are covered by the stripe structure (18) are butted with each other to grow a grating layer (19);
preparing a grating (20) on the surface of the grating layer (19);
forming a cladding layer (21) and an electric contact layer (22) on the surfaces of the first upper waveguide layer (13), the second upper waveguide layer (17) and the grating layer (19), and preparing a layer-inverted shallow ridge waveguide by using the cladding layer (21) and the electric contact layer (22);
carrying out photoetching and ion implantation on the electric contact layer (22);
and preparing a P electrode (24) on the inverted shallow ridge waveguide and manufacturing an N electrode (25) at the bottom of the substrate (10).
7. A method for producing as claimed in claim 6, characterized in that a first SiO is produced in the first upper waveguide layer (13) 2 The bar-shaped structure (14) comprises:
growing SiO on the first upper waveguide layer (13) 2 A layer;
preparing first SiO in the gain region (3) and the gain region (7) by photoetching and wet etching 2 A bar structure (14).
8. The method of claim 6, wherein the removing the first SiO 2 Stripe structures (14) and preparing a second SiO in said first upper waveguide layer (13) and said second upper waveguide layer (17) 2 The bar-shaped structure (18) comprises:
etching to remove the first SiO 2 A strip-shaped structure (14);
growing SiO on the second upper waveguide layer (17) and the first upper waveguide layer (13) 2 A layer;
preparing a second SiO in the modulator region (1), the modulator region (5), the gain region (3) and the gain region (7) by photolithography and wet etching 2 A strip-shaped structure (18).
9. The method of claim 6, wherein the etching removes the first SiO 2 The first lower waveguide layer (11), the first multi-quantum well active region (12) and the first upper waveguide layer (13) are covered by the stripe structures (14), and the second SiO is removed by etching 2 The first lower waveguide layer (11), the first multiple quantum well active region (12), the first upper waveguide layer (13), the second lower waveguide layer (15), the second multiple quantum well active region (16) and the second upper waveguide layer (17) which are covered by the stripe structure (18) comprise:
by CH 4 And H 2 Performing RIE etching;
after the etching, cleaning the substrate (10) by respectively adopting trichloroethylene, acetone and ethanol;
by means of H 2 SiO 4 And H 2 O 2 And corroding the etched defects.
10. The method of manufacturing according to claim 6, wherein the lithographically implanting the electrical contact layer (22) comprises:
photoetching an isolation groove pattern on the electric contact layer (22);
and etching the electric isolation groove and performing He ion implantation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111207058.XA CN115986567A (en) | 2021-10-15 | 2021-10-15 | Double-end-face light-emitting laser and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111207058.XA CN115986567A (en) | 2021-10-15 | 2021-10-15 | Double-end-face light-emitting laser and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115986567A true CN115986567A (en) | 2023-04-18 |
Family
ID=85965268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111207058.XA Pending CN115986567A (en) | 2021-10-15 | 2021-10-15 | Double-end-face light-emitting laser and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115986567A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116387974A (en) * | 2023-06-05 | 2023-07-04 | 福建慧芯激光科技有限公司 | Preparation method of edge-emitting laser based on butt-joint growth process |
| CN116387976A (en) * | 2023-06-05 | 2023-07-04 | 福建慧芯激光科技有限公司 | Preparation method of edge-emitting laser with embedded multi-order grating |
| CN116387975A (en) * | 2023-06-05 | 2023-07-04 | 福建慧芯激光科技有限公司 | Stable wavelength edge-emitting laser with adjustable lasing direction |
-
2021
- 2021-10-15 CN CN202111207058.XA patent/CN115986567A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116387974A (en) * | 2023-06-05 | 2023-07-04 | 福建慧芯激光科技有限公司 | Preparation method of edge-emitting laser based on butt-joint growth process |
| CN116387976A (en) * | 2023-06-05 | 2023-07-04 | 福建慧芯激光科技有限公司 | Preparation method of edge-emitting laser with embedded multi-order grating |
| CN116387975A (en) * | 2023-06-05 | 2023-07-04 | 福建慧芯激光科技有限公司 | Stable wavelength edge-emitting laser with adjustable lasing direction |
| CN116387976B (en) * | 2023-06-05 | 2023-12-29 | 福建慧芯激光科技有限公司 | Preparation method of edge-emitting laser with embedded multi-order grating |
| CN116387975B (en) * | 2023-06-05 | 2023-12-29 | 福建慧芯激光科技有限公司 | Stable wavelength edge-emitting laser with adjustable lasing direction |
| CN116387974B (en) * | 2023-06-05 | 2023-12-29 | 福建慧芯激光科技有限公司 | Preparation method of edge-emitting laser based on butt-joint growth process |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN115986567A (en) | Double-end-face light-emitting laser and preparation method thereof | |
| CN107508143B (en) | Tunable laser and preparation method thereof | |
| JP2010263153A (en) | Semiconductor integrated optical device, and method of making the same | |
| JP2007324474A (en) | Optical integrated element and manufacturing method therefor | |
| KR100912564B1 (en) | Semiconductor optical device and manufacturing method therefor | |
| CN112259649B (en) | Super-radiation light emitting diode and manufacturing method thereof | |
| CN112670820B (en) | Method for realizing electric isolation of functional areas of electric absorption modulation laser | |
| JP5314435B2 (en) | Integrated optical device and manufacturing method thereof | |
| JPH10321958A (en) | Optical semiconductor device and manufacture thereof | |
| CN108400523B (en) | High-speed integrated DFB semiconductor laser chip and preparation method thereof | |
| JP3914350B2 (en) | Semiconductor laser device | |
| CN115051239A (en) | Tunable electroabsorption modulation laser and preparation method thereof | |
| CN115149399A (en) | Grating laser and preparation method | |
| US20030017662A1 (en) | High power single mode laser and method of fabrication | |
| CN111755948B (en) | GePb laser with ridge waveguide structure and forming method thereof | |
| JP2002217446A (en) | Optical semiconductor integrated device and method of manufacturing the same | |
| KR100576776B1 (en) | Method for fabricating semiconductor optical device | |
| CN116488001A (en) | Double-end-face tunable laser and preparation method thereof | |
| JP2542570B2 (en) | Method for manufacturing optical integrated device | |
| JPH07111361A (en) | Buried type semiconductor laser device and manufacture thereof | |
| JPH08330665A (en) | Manufacture of optical semiconductor laser | |
| CN114899697B (en) | Dual-wavelength cascade semiconductor laser and preparation method thereof | |
| KR102452494B1 (en) | Photonic crystal semiconductor laser device and its manufacturing method | |
| CN116137412A (en) | Integrated device and preparation method thereof | |
| JPS609186A (en) | Semiconductor light-emitting device and manufacture thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |