CN115980892A - Antireflection film and manufacturing method thereof - Google Patents
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Abstract
The invention provides an antireflection film, which comprises low-refractive-index film layers and high-refractive-index film layers which are alternately stacked, wherein the top layer of the antireflection film is the low-refractive-index film layer, the refractive index of the low-refractive-index film layer is lower than that of the high-refractive-index film layer, the low-refractive-index film layer is a SIALON film layer, and the high-refractive-index film layer is a SI film layer 3 N 4 And the hardness of the antireflection film is more than 11GPa. The invention also provides a method for preparing the antireflection film. The invention can improve the hardness of the film layer and has scratch resistance.
Description
Technical Field
The invention relates to the technical field of optical product coating, in particular to an antireflection film and a manufacturing method thereof.
Background
Currently, in application fields such as camera lenses, mobile phone screens, vehicle-mounted and industrial touch display screen protective cover plates, antireflection films with high hardness and high wear resistance are generally required. Traditional film material SiO 2 And Si 3 N 4 Limited hardness, single layer, can be achieved under magnetron sputtering conditionsSiO 2 The nano indentation hardness of the film layer is below 10GPa, and the single-layer Si 3 N 4 The nano indentation hardness is about 20GPa, and SiO is used on the surface of the lens 2 And Si 3 N 4 In which the outermost layer of the antireflective film is SiO 2 The hardness of the entire film layer is not high enough and scratch resistance is not achieved.
Disclosure of Invention
Aiming at the technical problem, the technical scheme adopted by the invention is as follows:
the embodiment of the invention provides an antireflection film, which comprises low-refractive-index film layers and high-refractive-index film layers which are alternately stacked, wherein the top layer of the antireflection film is the low-refractive-index film layer, the refractive index of the low-refractive-index film layer is lower than that of the high-refractive-index film layer, the low-refractive-index film layer is a SIALON film layer, and the high-refractive-index film layer is a SI film layer 3 N 4 The film layer, the hardness of the antireflection film is more than 11GPa.
Another embodiment of the present invention provides a method for manufacturing an antireflection film, which is used to manufacture the antireflection film, and the method includes the following steps:
s100, plating a low-refractive-index film layer on the surface of a substrate; executing S110;
s110, setting C = C +1, and if C is less than C1, executing S120; if C = C1, the coating control program is exited, and the initial value of C is 0; c1 is a preset odd number;
s120, if the outermost layer of the current substrate is a high-refractive-index film layer, plating a low-refractive-index film layer on the high-refractive-index film layer by adopting an SI target and an AL target under the assistance of PBS source ions introduced with nitrogen and oxygen, and executing S110; if the outermost layer of the current substrate is the low-refractive-index film layer, plating a high-refractive-index film layer on the low-refractive-index film layer by adopting an SI target under the assistance of nitrogen-introduced PBS source ions, and executing S110;
alternatively, the method comprises the steps of:
s200, plating a high-refractive-index film layer on the surface of the substrate; executing S210;
s210, setting C = C +1, if C < C2, executing S220; if C = C2, quitting the coating control program; c2 is a preset even number;
s220, if the outermost layer of the current substrate is a high-refractive-index film layer, plating a low-refractive-index film layer on the high-refractive-index film layer, and executing S210; if the outermost layer of the current substrate is the low-refractive-index film layer, plating a high-refractive-index film layer on the low-refractive-index film layer, and executing S210;
wherein the low refractive index film layer and the high refractive index film layer are plated at the vacuum normal temperature.
The invention has at least the following beneficial effects:
in the embodiment of the invention, when the low-refractive-index SIO2 film layer is plated at normal temperature and high vacuum, nitrogen and oxygen are introduced into the PBS source by doping the aluminum material with a certain proportion, and the nitrogen is oxidized into the mixed SIALON low-refractive-index material, so that the low-refractive-index SIO film is relatively higher than the traditional low-refractive-index SIO film 2 The film layer can improve the hardness, further can improve the hardness of a film system formed by overlapping high-refractive index materials and low-refractive index materials, and synchronously improves the scratch resistance effect.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an antireflection film according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of a method for manufacturing an antireflection film according to an embodiment of the present invention.
Fig. 3 is a schematic view of a method for manufacturing an antireflection film according to another embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
The embodiment of the invention provides an antireflection film, which comprises low-refractive-index film layers and high-refractive-index film layers which are alternately stacked, wherein the top layer of the antireflection film is the low-refractive-index film layer, the refractive index of the low-refractive-index film layer is lower than that of the high-refractive-index film layer, the low-refractive-index film layer is a SIALON film layer, and the high-refractive-index film layer is an SI film layer 3 N 4 And the hardness of the antireflection film is more than 11GPa.
In the embodiment of the present invention, siALON denotes a mixed oxynitride of silicon oxynitride SION based on silicon oxynitride and aluminum oxynitride SiALON. The hardness and the refractive index are directly influenced by the ALON content in the SIALON material, if the ALON content is high, the hardness of the obtained SIALON material is high, the refractive index is high, if the ALON content is low, the hardness is opposite, but the ALON material is not in a linear relation, and preferably, the ALON content in the SIALON is 4% -6%. More preferably, the content of ALON in SIALON is 5%, which enables the hardness of the antireflection film to be as high as possible. In a specific example, when ALON is contained in SIALON in an amount of 5%, the hardness of the antireflection film may be up to 14GPa.
Further, in the embodiment of the present invention, the film layer of the antireflection film is 5 to 7 layers. Preferably, the film layer of the antireflection film is 7 layers. Specifically, as shown in fig. 1, the antireflection film may include a first low refractive index film layer 101, a first high refractive index film layer 201, a second low refractive index film layer 102, a second high refractive index film layer 202, a third low refractive index film layer 103, a third high refractive index film layer 203, and a fourth low refractive index film layer 104, which are alternately stacked, where the first low refractive index film layer is a bottom layer of the antireflection film, and the fourth low refractive index film layer is a top layer of the antireflection film.
Wherein the thickness of the first low refractive index film layer is 55 to 65nm, preferably 60nm. The thickness of the first high refractive index film layer is 8 to 15nm, preferably 10nm. The thickness of the second low refractive index film layer is 50 to 60nm, preferably 52.4nm. The thickness of the second high refractive index film layer is 30 to 40nm, preferably 40nm. The thickness of the third low refractive index film layer is 10 to 20nm, preferably 16nm. The thickness of the third high refractive index film layer is 60 to 70nm, preferably 65nm. The thickness of the fourth low refractive index film layer is 90 to 95nm, preferably 90.15nm.
In the embodiment of the present invention, the refractive index of the low refractive index film layer is 1.5. The refractive index of the high-refractive-index film layer is 2.03-2.06.
According to the antireflection film provided by the embodiment of the invention, the low-refractive-index film layer comprises the ALON material, the ALON material belongs to a ceramic material with high hardness and medium and high refractive index, the hardness is about 4 times that of quartz, the refractive index is 1.79-2.03, the antireflection film has high optical transmission performance from visible light to middle infrared, and the antireflection film has high optical transmission performance in SIO 2 A small amount of ALON is added in the composition, so that the hardness of the film layer can be effectively improved.
Another embodiment of the present invention provides an antireflection film manufacturing method for manufacturing the antireflection film of the foregoing embodiment based on a magnetron sputtering coating apparatus, as shown in fig. 1, the method may include the following steps:
s100, plating a low-refractive-index film layer on the surface of a substrate; s110 is performed.
In this embodiment, the substrate is a pretreated substrate, and specifically, the substrate may be subjected to a substrate ion cleaning process using an existing process. The preheating temperature of the substrate may be 65 to 75 deg..
S100 may specifically include:
under the high vacuum condition at normal temperature (25 ℃), double groups of SI target and AL target atoms are introduced with nitrogen N 2 And oxygen O 2 The PBS source ions are used for preparing the low-refractive-index film layer SIALON.
Wherein, in the process of plating the low refractive index film layer, the vacuum pressure in the magnetron sputtering coating equipment can be 1.0 multiplied by 10 -3 mbar～6.0×10 -4 mbar。N 2 The flow rate of (b) can be 300sccm to 500sccm, preferably 310sccm. O is 2 The flow rate of (b) can be 400sccm to 500sccm, preferably 465sccm. N is a radical of 2 ：O 2 =1:1.5. the power of the SI target is 15-20 kw, the voltage is 700-720v, and the current is 20-22A. The power of the AL target is 2.5-5 KW, the voltage is 220-260V, and the current is 8-11A. The power of the PBS ion source is 6-7 kw, preferably 6.5kw. Introducing oxygen and nitrogen into the PBS ion source for nitrogen oxidationThe SI target and the AL target sputter SI/AL atoms to form a SIALON film. The low refractive index film layer may have a refractive index of 1.5.
S110, setting C = C +1, if C is less than C1, indicating that the number of film layers on the substrate does not reach the number of film layers to be plated, and executing S120; if C = C1, the number of the film layers on the substrate reaches the number of the film layers needing to be plated, the film plating control program is exited, and the initial value of C is 0; c1 is a preset odd number.
In the embodiment of the present invention, C1 may be set based on actual needs, and preferably, C1=5 or C1=7. More preferably, C1=7.
S120, if the outermost layer of the current substrate is a high-refractive-index film layer, plating a low-refractive-index film layer on the high-refractive-index film layer by adopting an SI target and an AL target under the assistance of PBS source ions introduced with nitrogen and oxygen, and executing S110; if the outermost layer of the current substrate is the low-refractive-index film layer, a high-refractive-index film layer is plated on the low-refractive-index film layer by adopting an SI target under the assistance of nitrogen-introduced PBS source ions, and S110 is executed.
In this step, the plating conditions of the low refractive index film layer are the same as S100. The plating conditions of the high-refractive-index film layer can be as follows: under normal temperature and high vacuum, the high refractive index film layer SI is prepared by double groups of SI target atoms under the assistance of nitrogen-introduced PBS source ions 3 N 4 。
Wherein, during the coating process of the high refractive index film layer, the vacuum pressure in the magnetron sputtering coating equipment can be 1.0 multiplied by 10 -3 mbar～6.0×10 -4 mbar。O 2 The flow rate of (2) can be 400sccm to 500sccm, preferably 465sccm. The power of the SI target is 15-20 kw, the voltage is 700-720v, and the current is 20-22A. The power of the PBS ion source is 6-7 kw, preferably 6.5kw. Introducing oxygen into PBS ion source for nitridizing SI target to sputter SI atoms to form SI 3 N 4 And (5) film layer. The refractive index of the high refractive index film layer may be 2.03 to 2.06.
In an embodiment of the present invention, in a case where C1=7, the antireflection film formed on the substrate may include a first low refractive index film layer, a first high refractive index film layer, a second low refractive index film layer, a second high refractive index film layer, a third low refractive index film layer, a third high refractive index film layer, and a fourth low refractive index film layer, which are alternately stacked, where the first low refractive index film layer is a bottom layer of the antireflection film, and the fourth low refractive index film layer is a top layer of the antireflection film. Wherein the first low refractive index film layer deposited on the substrate has a thickness of 55 to 65nm, preferably 60nm, and the deposition time may be 200s. The first high refractive index film layer deposited on the substrate has a thickness of 8 to 15nm, preferably 10nm, and the deposition time may be 47s. The second low refractive index film layer is deposited on the substrate to a thickness of 50 to 60nm, preferably 52.4nm, for a deposition time of 175s. The thickness of the second high refractive index film layer deposited on the substrate is 30 to 40nm, preferably 40nm, and the deposition time may be 190s. The thickness of the third low refractive index film layer deposited on the substrate is 10 to 20nm, preferably 16nm, and the deposition time may be 53s. The thickness of the third high refractive index film layer deposited on the substrate is 60 to 70nm, preferably 65nm, and the deposition time may be 309s. The thickness of the fourth low refractive index film layer deposited on the substrate is 90 to 95nm, preferably 90.15nm, and the deposition time can be 300s.
In another embodiment of the present invention, as shown in fig. 2, a method for manufacturing an antireflection film is provided, which includes the steps of:
s200, plating a high-refractive-index film layer on the surface of a substrate; s210 is performed.
In this embodiment, the substrate is a pretreated substrate, and specifically, the substrate may be subjected to a substrate ion cleaning process using an existing process.
S200 may specifically include:
under normal temperature and high vacuum, the high refractive index film layer SI is prepared by double groups of SI target atoms under the assistance of nitrogen-introduced PBS source ions 3 N 4 。
Wherein, during the coating process of the high refractive index film layer, the vacuum pressure in the magnetron sputtering coating equipment can be 1.0 multiplied by 10 -3 mbar～6.0×10 -4 mbar。O 2 The flow rate of (b) can be 400sccm to 500sccm, preferably 465sccm. The power of the SI target is 15-20 kw. The power of the PBS ion source is 6-7 kw, preferably 6.5kw. Introducing oxygen into PBS ion source for nitridizing SI target to sputter SI atoms to form SI 3 N 4 And (5) film layer. The refractive index of the high refractive index film layer may be 2.03 to 2.06.
S210, setting C = C +1, if C < C2, executing S220; if C = C2, quitting the coating control program; c2 is a preset even number.
C2 may be set based on actual needs. Preferably, C2=4 or C2=6, more preferably, C2=6.
S220, if the outermost layer of the current substrate is a high-refractive-index film layer, plating a low-refractive-index film layer on the high-refractive-index film layer, and executing S210; if the outermost layer of the current substrate is the low-refractive-index film layer, plating a high-refractive-index film layer on the low-refractive-index film layer, and executing S210.
In this step, the plating conditions of the low refractive index film layer may be the same as S100 described above. The plating conditions of the high refractive index film layer may be the same as S200 described above.
In an embodiment of the present invention, in a case where C2=6, the antireflection film formed on the substrate may include a first high refractive index film layer, a first low refractive index film layer, a second high refractive index film layer, a second low refractive index film layer, a third high refractive index film layer, and a third low refractive index film layer, which are alternately stacked, where the first high refractive index film layer is a bottom layer of the antireflection film, and the third low refractive index film layer is a top layer of the antireflection film. The first high refractive index film layer deposited on the substrate has a thickness of 8 to 15nm, preferably 10nm, and the deposition time may be 47s. The first low refractive index film layer deposited on the substrate has a thickness of 50 to 60nm, preferably 52.4nm, and the deposition time may be 175s. The second high refractive index film layer is deposited on the substrate to a thickness of 30 to 40nm, preferably, 40nm, and the deposition time may be 190s. The second low refractive index film layer is deposited on the substrate to a thickness of 10 to 20nm, preferably 16nm, and the deposition time may be 53s. The thickness of the third high refractive index film layer deposited on the substrate is 60 to 70nm, preferably 65nm, and the deposition time may be 309s. The thickness of the third low refractive index film layer deposited on the substrate is 90 to 95nm, preferably 90.15nm, and the deposition time may be 300s.
Example 1
Step 1: putting the substrate into a vacuum chamber for vacuum pumpingAnd preheating under vacuum pressure of 8.0X 10 -6 mbar～2.0×10 -5 mbar, preheating temperature of 65-75 ℃, and pretreating the substrate to activate the surface of the substrate;
step 2: depositing a first low-refractive-index film layer, connecting an SI target and an AL target to a pulse direct-current power supply, introducing oxygen and nitrogen, wherein the flow rate of the nitrogen is 465sccm, the flow rate of the oxygen is 465sccm, the power of the SI target is 15kw, the power of the AL is 2.5kw, the power of a PBS ion source is 6.5kw, the deposition time is 200s, and the thickness of the deposited first low-refractive-index film layer is about 60nm;
and step 3: depositing a first high-refractive-index film layer, connecting an SI target with a pulse direct-current power supply, introducing oxygen, wherein the flow rate of nitrogen is 465sccm, the flow rate of oxygen is 465sccm, the power of the SI target is 15kw, the power of a PBS ion source is 6.5kw, the deposition time is 47s, and the thickness of the deposited first high-refractive-index film layer is about 10nm;
and 4, step 4: depositing a second low-refractive-index film layer, connecting an SI target and an AL target to a pulse direct-current power supply, introducing oxygen and nitrogen, wherein the flow rate of the nitrogen is 465sccm, the flow rate of the oxygen is 465sccm, the power of the SI target is 15kw, the power of the AL is 2.5kw, the power of a PBS ion source is 6.5kw, the deposition time is 175s, and the thickness of the deposited first low-refractive-index film layer is about 52.4nm;
and 5: depositing a second high-refractive-index film layer, connecting an SI target with a pulse direct-current power supply, introducing oxygen, wherein the flow rate of nitrogen is 465sccm, the flow rate of oxygen is 465sccm, the power of the SI target is 15kw, the power of a PBS ion source is 6.5kw, the deposition time is 190s, and the thickness of the deposited second high-refractive-index film layer is about 40nm;
and 6: depositing a third low-refractive-index film layer, connecting an SI target and an AL target to a pulse direct-current power supply, introducing oxygen and nitrogen, wherein the flow rate of the nitrogen is 465sccm, the flow rate of the oxygen is 465sccm, the power of the SI target is 15kw, the power of the AL is 2.5kw, the power of a PBS ion source is 6.5kw, the deposition time is 53s, and the thickness of the deposited third low-refractive-index film layer is about 16nm;
and 7: depositing a third high-refractive-index film layer, connecting an SI target with a pulse direct-current power supply, introducing oxygen, wherein the flow rate of nitrogen is 465sccm, the flow rate of oxygen is 465sccm, the power of the SI target is 15kw, the power of a PBS ion source is 6.5kw, the deposition time is 309s, and the thickness of the deposited third high-refractive-index film layer is about 65nm;
and 7: depositing a fourth low-refractive-index film layer, connecting an SI target and an AL target to a pulse direct-current power supply, introducing oxygen and nitrogen, wherein the flow rate of the nitrogen is 465sccm, the flow rate of the oxygen is 465sccm, the power of the SI target is 15kw, the power of the AL is 2.5kw, the power of a PBS ion source is 6.5kw, the deposition time is 300s, and the thickness of the deposited third low-refractive-index film layer is about 90.15nm.
Example 2
This example is essentially the same as example 1, except that the AL target power is 3.5kw.
Example 3
This example is substantially the same as example 1 except that the flow rate of nitrogen gas was 310sccm.
Example 4
This example is essentially the same as example 2, except that the flow rate of nitrogen was 310sccm.
Comparative example
The comparative example is different from example 1 in that when a low refractive index film layer is deposited, no AL target is used, no nitrogen gas is introduced, only oxygen gas is introduced, and the flow rate of oxygen gas is 930sccm.
The refractive index, nanoindentation hardness, and mohs hardness of the optical dielectric films obtained in the above examples and comparative examples were measured, and the results of the measurements are shown in table 1 below:
TABLE 1
As can be seen from the above table:
1) Comparative example SiO, a traditionally plated low index material 2 The hardness of the film layer of the comparative mixture SIALON is obviously lower;
2) Example 1 and example 3: the proportion of the introduced nitrogen and the introduced oxygen has obvious deviation on the hardness; the main low refractive index material SiAlON can be regarded as being prepared by mixing SiON and AlON, wherein the equivalent dielectric constants of SiON and AlON are respectively theoretically calculated by taking SiO2 and Al2O3 as main materials and Si3N4 and AlN as dispersed particles. To produce 1mol Si3N4 requires 3mol Si and 2mol N2, while to react completely with the same amount of Si to produce SiO2 requires 3mol O2, 1.5 times the amount of N2 required. When the ratio of the introduced nitrogen to the introduced oxygen is 1: the ratio is preferably 1.5.
3) Example 4 compared to example 3, the nano-hardness is slightly higher than 0.2Gpa, and there is almost no difference in Mohs hardness of AR + AR; but the corresponding SIALON refractive index is relatively higher; the reason is that the proportion of Al content influences the proportion of mixed oxides to change the material characteristics, and meanwhile, the film is more compact when plated under a high-power PBS source, so that the hardness of a single-layer film is improved, and the film system formed by alternately stacking low-refractive-index films and high-refractive-index films is improved.
4) The refractive index of the low refractive index film layers obtained in embodiments 1 to 4 is about 1.5, and the film system design requirements of general antireflection films of optical lenses and window protective glass can be met.
5) Example 4 gives the highest hardness, and therefore, an AL target power of 3.5kw, i.e., ALON at a SIALON fraction of about 5%, enables the resulting antireflection film to have the most optimum hardness.
In the embodiment of the invention, the hardness is measured by the following method: a nano indenter with a test depth of 40nm; the scratch resistance adopts a test method as follows: dura mater pen test instrument
According to the preparation method of the antireflection film provided by the embodiment of the invention, SIO with low refractive index is plated at normal temperature and under high vacuum 2 During film layer formation, a certain proportion of aluminum material is doped, nitrogen and oxygen are introduced into the PBS source, and the mixed SIALON low-refractive-index material is formed through nitrogen oxidation, so that compared with the traditional SIO2 with low refractive index, the hardness can be improved, the hardness of a film system formed by overlapping high-refractive-index materials and low-refractive-index materials can be further improved, and the scratch-resistant effect is synchronously improved.
Although some specific embodiments of the present invention have been described in detail by way of example, it should be understood by those skilled in the art that the above examples are for illustration only and are not intended to limit the scope of the invention. It will also be appreciated by those skilled in the art that various modifications may be made to the embodiments without departing from the scope and spirit of the invention. The scope of the present disclosure is defined by the appended claims.
Claims (10)
1. The antireflection film is characterized by comprising a low-refractive-index film layer and a high-refractive-index film layer which are alternately stacked, wherein the top layer of the antireflection film is the low-refractive-index film layer, the refractive index of the low-refractive-index film layer is lower than that of the high-refractive-index film layer, the low-refractive-index film layer is a SIALON film layer, and the high-refractive-index film layer is a SI film layer 3 N 4 The film layer, the hardness of the antireflection film is more than 11GPa.
2. The antireflection film of claim 1 wherein ALON is present in a range of 4% to 6% in SIALON.
3. The antireflection film of claim 1 wherein the film layer comprises 5 to 7 layers.
4. The antireflection film of claim 3 wherein the film layer of the antireflection film is 7 layers.
5. The antireflection film according to claim 4, wherein the antireflection film comprises a first low-refractive-index film layer, a first high-refractive-index film layer, a second low-refractive-index film layer, a second high-refractive-index film layer, a third low-refractive-index film layer, a third high-refractive-index film layer and a fourth low-refractive-index film layer which are alternately stacked, the first low-refractive-index film layer is a bottom layer of the antireflection film, and the fourth low-refractive-index film layer is a top layer of the antireflection film;
the thickness of the first low-refractive-index film layer is 55-65 nm, the thickness of the first high-refractive-index film layer is 8-15 nm, the thickness of the second low-refractive-index film layer is 50-60 nm, the thickness of the second high-refractive-index film layer is 30-40 nm, the thickness of the third low-refractive-index film layer is 10-20 nm, the thickness of the third high-refractive-index film layer is 60-70 nm, and the thickness of the fourth low-refractive-index film layer is 90-95 nm.
6. The antireflection film of claim 1 wherein the low refractive index film layer has a refractive index of 1.5.
7. The antireflection film of claim 1 wherein the refractive index of the high refractive index film layer is 2.03 to 2.06.
8. An antireflection film production method for producing an antireflection film according to any one of claims 1 to 7, characterized by comprising the steps of:
s100, plating a low-refractive-index film layer on the surface of a substrate; executing S110;
s110, setting C = C +1, and if C is less than C1, executing S120; if C = C1, exiting the coating control program, wherein the initial value of C is 0; c1 is a preset odd number;
s120, if the outermost layer of the current substrate is a high-refractive-index film layer, plating a low-refractive-index film layer on the high-refractive-index film layer by adopting an SI target and an AL target under the assistance of PBS source ions introduced with nitrogen and oxygen, and executing S110; if the outermost layer of the current substrate is the low-refractive-index film layer, plating a high-refractive-index film layer on the low-refractive-index film layer by adopting an SI target under the assistance of nitrogen-introduced PBS source ions, and executing S110;
alternatively, the method comprises the steps of:
s200, plating a high-refractive-index film layer on the surface of a substrate; executing S210;
s210, setting C = C +1, if C < C2, executing S220; if C = C2, quitting the coating control program; c2 is a preset even number;
s220, if the outermost layer of the current substrate is a high-refractive-index film layer, plating a low-refractive-index film layer on the high-refractive-index film layer, and executing S210; if the outermost layer of the current substrate is the low-refractive-index film layer, plating a high-refractive-index film layer on the low-refractive-index film layer, and executing S210;
wherein the low refractive index film layer and the high refractive index film layer are plated at vacuum and normal temperature.
9. The method of claim 8, wherein the power of the SI target is 15-20kw and the power of the AL target is 2.5-5 kw.
10. The method of claim 9, wherein the power of the AL target is 3.5kw.
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