CN115954399A - Carbon-based inorganic perovskite solar cell modified by buried additive and preparation method - Google Patents
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Abstract
The invention discloses a carbon-based inorganic perovskite solar cell modified by a buried additive and a preparation method thereof, wherein the solar cell comprises the following components: the transparent conductive substrate, the electron transmission layer, the inorganic perovskite light absorption layer and the carbon electrode are sequentially arranged from bottom to top and connected; the electron transport layer is ZnO doped with a burying bottom additive, and the burying bottom additive is one of cesium acetate (CsAc), cesium fluoride (CsF) and cesium trifluoroacetate (CsTFA). Any one of CsAc, csF and CsTFA is used as a bottom-buried additive of the ZnO electron transport layer, so that the film quality of the ZnO electron transport layer and the inorganic perovskite light absorption layer is improved, the interface energy level difference between the ZnO electron transport layer and the inorganic perovskite light absorption layer is reduced, the bottom interface contact is improved, the non-radiative recombination of charges is inhibited, and the electron extraction and transport are promoted. Finally, the photoelectric conversion efficiency and the stability of the solar cell are improved.
Description
Technical Field
The invention relates to the technical field of novel solar cells, in particular to a preparation method of a carbon-based inorganic perovskite solar cell modified by a buried additive.
Background
In recent years, organic-inorganic hybrid perovskite solar cells have received much attention, and their certified Photoelectric Conversion Efficiency (PCE) has reached 25.7%. However, the volatile and thermal degradation properties of organic cations severely compromise the stability of the device. In contrast, csPbX 3 (X = I, br or mixed halide) inorganic perovskites have better thermal stability and thus show great promise. Wherein the mixed halide CsPbI 2 Br inorganic perovskites can achieve a balance between band gap and phase stability, and are considered to be the most promising light absorbing layers. At present, csPbI based on organic hole transport layer and noble metal electrode 2 The PCE of Br inorganic perovskite solar cells has exceeded 17%. Unfortunately, chlorobenzene is often used as a solvent for preparing organic hole transport layer precursor solutions, which is harmful to soil, water, and the atmosphere. The additives in the organic hole transport layer have hygroscopic and deliquescent properties, which will accelerate device degradation. In addition to high cost, noble metal electrodes are extremely sensitive to halogen ion migration from the interior of the perovskite. This detrimental migration of halogen ions will lead to phase separation and irreversible degradation, thereby destroying the stability of the device. Carbon electrodes are cheap and hydrophobic and inert to halogen ion migration. Based on the above considerations, carbon-based CsPbI without organic hole transport layer and noble metal electrode 2 Br inorganic perovskite solar cells should be an ideal choice for commercial applications, with the advantages of low cost, simple structure and high stability.
Currently, most efficient carbon-based inorganic perovskite solar cells are made of TiO 2 Electron transport layer. However, tiO 2 High temperature (450 ℃ C.) annealing is often required and the process is complex, which is both energy consuming and incompatible with flexible devices. To solve the above problems, many low temperature electron transport layers, such as SnO, have been developed 2 ZnO and Nb 2 O 5 And the like. ZnO is considered the most promising electron transport layer for carbon-based inorganic perovskite solar cells due to its higher electron mobility, more appropriate energy level alignment, and better uv light stability. Surprisingly, in the early years, znO has received little attention from researchers working with carbon-based inorganic perovskite solar cells。
Developing from 2019 to date, znO-based carbon-based inorganic perovskite solar cells achieved PCEs of up to 12.39%. However, due to the presence of a large number of buried interface defects (about 100 times higher than those in perovskite thin films), the PCE is well below its theoretical limit (20.1%).
Therefore, there is a need for a carbon-based inorganic perovskite solar cell with improved buried interface defects and a method for manufacturing the same.
Disclosure of Invention
The invention aims to provide a preparation method of a carbon-based inorganic perovskite solar cell modified by a burial additive, wherein any one of cesium acetate (CsAc), cesium fluoride (CsF) and cesium trifluoroacetate (CsTFA) is used as the burial additive of a ZnO electron transport layer, so that the film quality of the ZnO electron transport layer and the light absorption layer of the inorganic perovskite is improved, the interface energy level difference between the ZnO electron transport layer and the inorganic perovskite is reduced, the bottom interface contact is improved, the non-radiative recombination of charges is inhibited, and the extraction and transmission of electrons are promoted. And finally, the PCE and the stability of the carbon-based inorganic perovskite solar cell are improved.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect of the invention, there is provided a buried additive modified carbon-based inorganic perovskite solar cell comprising: the transparent conductive substrate, the electron transmission layer, the inorganic perovskite light absorption layer and the carbon electrode are sequentially arranged from bottom to top and connected; the electron transport layer is ZnO doped with a bottom-burying additive, and the bottom-burying additive is one of CsAc, csF and CsTFA.
Further, the thickness of the electron transport layer is 25-50 nm.
Further, the transparent conductive substrate is ITO conductive glass, and the thickness of the transparent conductive substrate is 1-1.1 mm.
Further, the inorganic perovskite light absorption layer is CsPbI 2 Br, and the thickness of the inorganic perovskite light absorption layer is 350-450 nm.
Further, the thickness of the carbon electrode is 10 to 25 μm.
In a second aspect of the invention, there is provided a method for preparing a carbon-based inorganic perovskite solar cell modified with the under-cladding additive, the method comprising:
s1, cleaning, drying and ultraviolet ozone treating a transparent conductive substrate to obtain a cleaned transparent conductive substrate;
s2, preparing a ZnO electron transport layer precursor solution, and adding the bottom-burying additive with the concentration of 1.0-4.0 mg/ml to obtain a ZnO electron transport layer precursor solution doped with the bottom-burying additive; then, spin-coating the ZnO electron transport layer precursor solution doped with the bottom-burying additive on the surface of the cleaned transparent conductive substrate, and performing first annealing to obtain the ZnO electron transport layer doped with the bottom-burying additive;
s3, preparing a precursor solution of the inorganic perovskite light absorption layer, spin-coating the precursor solution on the surface of the ZnO electron transport layer doped with the bottom-buried additive, and performing second annealing to obtain the inorganic perovskite light absorption layer;
s4, coating conductive carbon slurry on the surface of the light absorption layer of the inorganic perovskite, and performing third annealing to form a carbon electrode, so as to obtain the carbon-based inorganic perovskite solar cell modified by the buried additive.
Further, the conditions of the first annealing include: annealing at 40-150 deg.c for 30-60 min.
Further, the conditions of the second annealing include: annealing at 40-60 deg.c for 2-5 min and then at 160-180 deg.c for 10-30 min.
Further, the third annealing conditions include: annealing at 90-120 deg.c for 10-30 min.
Further, the steps S1 and S2 are completed in an air environment; said steps S3 and S4 are at N 2 And finishing in a glove box.
One or more technical solutions in the embodiments of the present invention have at least the following technical effects or advantages:
according to the carbon-based inorganic perovskite solar cell modified by the burial additive and the preparation method, any one of CsAc, csF and CsTFA is used as the burial additive of the ZnO electron transport layer, so that the carbon-based inorganic perovskite solar cell modified by the burial additive obtains the PCE of 14.25% at most. The preparation method not only improves the film quality of the ZnO electron transmission layer and the inorganic perovskite light absorption layer, but also reduces the interface energy level difference between the ZnO electron transmission layer and the inorganic perovskite light absorption layer, thereby improving bottom interface contact, inhibiting non-radiative recombination of charges and promoting electron extraction and transmission. Meanwhile, the stability of the device is also improved. The preparation process is simple, efficient, low in cost and suitable for commercial production.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
FIG. 1 is a schematic diagram of the device structure of carbon-based inorganic perovskite solar cells prepared in examples 1-3 and comparative example; wherein, 1-transparent conductive substrate; 2-an electron transport layer; 3-an inorganic perovskite light-absorbing layer; a 4-carbon electrode;
FIG. 2 is an X-ray photoelectron spectroscopy (XPS) O1 s fitted spectrum of the electron transport layer in examples 1 to 3 and a comparative example;
FIG. 3 is an Atomic Force Microscope (AFM) image of the electron transport layer of examples 1-3 and comparative example;
FIG. 4 is a graph showing the contact angle of dimethyl sulfoxide (DMSO)/Dimethylformamide (DMF) solvents of the electron transport layers of examples 1 to 3 and comparative example;
FIG. 5 (a) is a Ultraviolet Photoelectron Spectroscopy (UPS) spectrum of the electron transport layer of examples 1-3 and comparative example; FIG. 5 (b) is a schematic diagram of the energy level structure of the materials used in the carbon-based inorganic perovskite solar cells prepared in examples 1-3 and comparative example;
FIGS. 6 (a-d) are surface Scanning Electron Microscope (SEM) images of light absorbing layers of inorganic perovskites of examples 1-3 and comparative examples; FIG. 6 (e-h) is a cross-sectional SEM image of inorganic perovskite light absorbing layers in examples 1-3 and comparative examples;
FIG. 7 is a graph of steady state Photoluminescence (PL) for the inorganic perovskite light absorbing layers of examples 1-3 and the comparative example;
FIG. 8 is a current density voltage (J-V) characteristic curve for carbon-based inorganic perovskite solar cells of examples 1-3 and comparative examples;
fig. 9 is a graph of the humidity stability of carbon-based inorganic perovskite solar cells of examples 1-3 and comparative examples.
Detailed Description
The present invention will be specifically explained below in conjunction with specific embodiments and examples, and the advantages and various effects of the present invention will be more clearly presented thereby. It will be understood by those skilled in the art that these specific embodiments and examples are for the purpose of illustrating the invention and are not to be construed as limiting the invention.
Throughout the specification, unless otherwise specifically noted, terms used herein should be understood as having meanings as commonly used in the art. Accordingly, unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. If there is a conflict, the present specification will control.
Unless otherwise specifically stated, various raw materials, reagents, instruments, equipment and the like used in the present invention are commercially available or can be obtained by an existing method.
According to an exemplary embodiment of the embodiments of the present invention, there is provided a carbon-based inorganic perovskite solar cell modified with a buried additive, including: the transparent conductive substrate, the electron transmission layer, the inorganic perovskite light absorption layer and the carbon electrode are sequentially arranged from bottom to top and connected; the electron transport layer is ZnO doped with a bottom burying additive, and the bottom burying additive is one of CsAc, csF and CsTFA.
In the technical proposal, the device comprises a base,
the thickness of the electron transmission layer is 25-50 nm. If the thickness of the electron transport layer is less than 25nm, the adverse effect of uneven coverage is caused; if the particle size is larger than 50nm, the adverse effect of blocking electron transmission is caused;
the transparent conductive substrate is made of ITO conductive glass, and the thickness of the transparent conductive substrate is 1-1.1 mm.
The light absorption layer of the inorganic perovskite is CsPbI 2 Br, and the thickness of the inorganic perovskite light absorption layer is 350-450 nm. If the thickness of the electric transparent conductive substrate is less than 350nm, the adverse effect of insufficient light absorption is caused; if it is more than 450nm, there is an adverse effect of inhibiting charge transport;
the thickness of the carbon electrode is 10-25 μm. If the thickness of the carbon electrode is less than 10 mu m, the adverse effect of uneven coverage is caused; if it exceeds 25 μm, the conductivity is not good;
according to another exemplary embodiment of the embodiments of the present invention, there is provided a method for preparing a carbon-based inorganic perovskite solar cell modified by a buried additive, the method including:
s1, cleaning, drying and ultraviolet ozone treatment of a transparent conductive substrate to obtain a cleaned transparent conductive substrate;
as an optional embodiment, the transparent conductive substrate is made of ITO conductive glass;
as a specific embodiment, the specific operation method of step S1 is as follows: sequentially placing the ITO conductive glass in a detergent, deionized water, acetone, isopropanol and absolute ethyl alcohol, and ultrasonically cleaning for 15-30 min respectively; using N 2 Drying the ITO conductive glass, and then carrying out ultraviolet ozone treatment on the surface of the ITO conductive glass for 10-20 min.
S2, preparing a ZnO electron transport layer precursor solution, and adding the bottom-burying additive with the concentration of 1.0-4.0 mg/ml to obtain a ZnO electron transport layer precursor solution doped with the bottom-burying additive; then spin-coating the ZnO electron transport layer precursor solution doped with the bottom-burying additive on the surface of the cleaned transparent conductive substrate, and performing first annealing to obtain the ZnO electron transport layer doped with the bottom-burying additive;
as a specific embodiment, the preparation method of the ZnO electron transport layer precursor solution is as follows: adding zinc acetate dihydrate (Zn (Ac) 2 ·2H 2 O) to a volume ratio of 2.75:100 of ethanolamine (C) 2 H 7 NO) and ethylene glycol monomethyl ether (C) 3 H 8 O 2 ) In the mixed solvent of (2), stirring to completeDissolving to obtain the solution with the concentration of 80-120 mg ml 1 The ZnO electron transport layer precursor solution.
Adding any one of the bottom-burying additives CsAc, csF and CsTFA into the precursor solution, wherein the concentration of the additive is 1.0-4.0 mg ml -1 Stirring until the mixture is completely dissolved to obtain a ZnO electron transport layer precursor solution doped with the bottom-buried additive; and spin-coating a ZnO electron transport layer precursor solution doped with the bottom-burying additive on the surface of the cleaned ITO conductive glass, rotating at 300-500 rpm for 3-5 s and at 3000-4000 rpm for 30-40 s, and then performing first annealing (annealing at 40-150 ℃ for 30-60 min) to obtain the ZnO electron transport layer doped with the bottom-burying additive.
The thickness of the electron transmission layer is 25-50 nm.
The steps S1 and S2 are completed in an air environment;
s3, preparing a precursor solution of the inorganic perovskite light absorption layer, spin-coating the precursor solution on the surface of the ZnO electron transport layer doped with the bottom-buried additive, and performing second annealing to obtain the inorganic perovskite light absorption layer;
the light absorption layer of the inorganic perovskite is CsPbI 2 Br, the preparation method of the precursor solution of the inorganic perovskite light absorption layer comprises the following steps: mixing CsI and PbI at a molar ratio of 2 2 And PbBr 2 Adding the mixture into a mixed solvent of DMF and DMSO with the volume ratio of 6 2 Br inorganic perovskite light-absorbing layer precursor solution;
the conditions of the second annealing include: annealing at 40-60 deg.c for 2-5 min and then at 160-180 deg.c for 10-30 min. Spin coating CsPbI on the surface of ZnO electron transport layer doped with buried additive 2 The precursor solution of Br inorganic perovskite light absorption layer is rotated at 500-1000 rpm for 5-15s, rotated at 2000-4000 rpm for 20-35s, annealed at 40-60 ℃ for 2-5min, and annealed at 160-180 ℃ for 10-30 min to obtain CsPbI 2 A light absorbing layer of inorganic perovskite Br.
S4, coating conductive carbon slurry on the surface of the light absorption layer of the inorganic perovskite, and performing third annealing to form a carbon electrode, so as to obtain the carbon-based inorganic perovskite solar cell modified by the buried additive.
The third annealing conditions include: annealing at 90-120 deg.c for 10-30 min.
Said steps S3 and S4 are at N 2 And finishing in a glove box.
The carbon-based inorganic perovskite solar cell modified by the buried additive and the preparation method of the carbon-based inorganic perovskite solar cell modified by the buried additive are described in detail in the following by combining examples, comparative examples and experimental data.
Example 1
The carbon-based inorganic perovskite solar cell modified by the CsAc buried additive is prepared by the embodiment, and the preparation method comprises the following steps:
s1: sequentially placing the ITO conductive glass in a detergent, deionized water, acetone, isopropanol and absolute ethyl alcohol, and ultrasonically cleaning for 15min respectively; using N 2 And drying the ITO conductive glass, and then carrying out ultraviolet ozone treatment on the surface of the ITO conductive glass for 15min.
S2: zn (Ac) 2 ·2H 2 O to C in a volume ratio of 2.75 2 H 7 NO and C 3 H 8 O 2 Is stirred until the mixture is completely dissolved to obtain a solution with a concentration of 100mg ml 1 The ZnO electron transport layer precursor solution; adding a bottom-burying additive CsAc into the precursor solution, wherein the concentration is 2.0mg ml 1 Stirring until the precursor is completely dissolved to obtain a CsAc-doped ZnO electron transport layer precursor solution; and spin-coating a CsAc-doped ZnO electron transport layer precursor solution on the surface of the cleaned ITO conductive glass, rotating at 500rpm for 3s, rotating at 4000rpm for 40s, and annealing at 150 ℃ for 30min to obtain the CsAc-doped ZnO electron transport layer.
S3: mixing CsI and PbI at a molar ratio of 2 2 And PbBr 2 Added to a mixed solvent of DMF and DMSO at a volume ratio of 6 2 Br inorganic perovskite light-absorbing layer precursor solution; spin coating CsPbI on the surface of CsAc doped ZnO electron transport layer 2 Obtaining CsPbI by rotating a Br inorganic perovskite light absorption layer precursor solution at 1000rpm for 5s, rotating at 3000rpm for 30s, annealing at 40 ℃ for 3min and annealing at 160 ℃ for 10min 2 A light absorbing layer of inorganic perovskite Br.
S4: in CsPbI 2 And (3) coating conductive carbon slurry on the surface of the Br inorganic perovskite light absorption layer, and annealing at 120 ℃ for 20min to obtain the carbon electrode.
The sample prepared in example 1 was labeled: znO-CsAc.
Example 2
This example prepares a CsF underfill additive modified carbon-based inorganic perovskite solar cell according to the procedure of example 1, except that: adjusting the bottom-burying additive CsAc in the step S2 into CsF; concentration 2.0mg mL -1 Adjusted to 1.0mg mL -1 (ii) a The other steps are unchanged.
The sample prepared in example 2 was labeled: znO-CsF.
Example 3
This example prepares a CsTFA buried additive modified carbon-based inorganic perovskite solar cell according to the procedure of example 1, except that: adjusting the bottom-burying additive CsAc of the step S2 into CsTFA; concentration 2.0mg mL -1 Adjusted to 4.0mg mL -1 (ii) a The other steps are unchanged.
The sample prepared in example 3 was labeled: znO-CsTFA.
Comparative example 1
This comparative example a carbon-based inorganic perovskite solar cell was prepared according to the procedure of example 1, with the difference that: no bottom-burying additive is added in the step S2; the other steps are unchanged. The samples prepared for the comparative examples are labeled: znO.
Experimental example 1
The above examples and comparative examples are tested and analyzed, and the device structure of the carbon-based inorganic perovskite solar cell prepared in examples 1-3 and comparative examples is schematically shown in fig. 1.
1. XPS O1 s fitting spectra of electron transport layers
XPS O1 s fitting spectra of the electron transport layers of examples 1-3 and comparative example are shown in FIG. 2; lattice oxygen (O) in ZnO electron transport layer L ) And oxygen deficiency (O) V +O OH ) The ratios of (A) to (B) are shown in Table 1.
Table 1 shows XPS O1 s fitting spectra O in FIG. 2 L And O V +O OH The occupied area ratio.
As can be seen from FIG. 2 and Table 1, the O in the ZnO electron transport layer is modified by the buried additive L Increased proportion of (A), (B) and (C) V +O OH The ratio of (c) is decreased. The result shows that the bottom-buried additive can passivate the oxygen defect of the ZnO film, and further improve the film quality of the ZnO electron transport layer.
2. AFM patterning of electron transport layers
AFM images of the electron transport layers of examples 1-3 and comparative example are shown in FIG. 3.
As can be seen from fig. 3, the Roughness (RMS) of the ZnO electron transport layer was reduced by the modification with the under-burying additive.
3. DMSO/DMF solvent contact angle of electron transport layer
The DMSO/DMF solvent contact angle of the electron transport layers of examples 1-3 and comparative example is shown in FIG. 4.
As can be seen from fig. 4, the contact angle of the ZnO electron transport layer was reduced by the modification with the buried additive.
As can be seen from FIGS. 3 and 4, the reduced RMS and contact angle contribute to CsPbI 2 And (4) nucleating and crystallizing the light-absorbing layer of the Br inorganic perovskite.
4. In order to characterize the effect of the buried additive on the ZnO level structure, UPS spectra of the electron transport layers of examples 1-3 and comparative example were tested and the results are shown in fig. 5 (a).
The energy level structure of the materials used in the carbon-based inorganic perovskite solar cells prepared in examples 1 to 3 and comparative example 1 is schematically shown in fig. 5 (b).
As can be seen from FIG. 5, the ZnO and CsPbI modified by the buried additive 2 The difference in interface energy levels between Br is reduced, which helps to suppress non-radiative recombination of charges, thereby facilitating electron extraction and transport.
5. Surface and cross-sectional SEM images of inorganic perovskite light-absorbing layer
Surface SEM images of the inorganic perovskite light-absorbing layers of examples 1-3 and comparative examples are shown in fig. 6 (a-d), and it can be seen from fig. 6 (a-d) that the inorganic perovskite light-absorbing layers exhibit a more uniform and smooth film morphology through modification with the underfill additive.
Cross-sectional SEM images of the inorganic perovskite light absorbing layers of examples 1 to 3 and comparative examples are shown in fig. 6 (e-h), and fig. 6 (e-h) demonstrates that the bedding-in additive can effectively reduce interfacial defects between the electron transport layer and the inorganic perovskite light absorbing layer, improving interfacial contact conditions, which facilitates electron transport and extraction.
6. Steady-state PL diagram of inorganic perovskite light-absorbing layer
The steady state PL profiles of the inorganic perovskite light absorbing layers of examples 1-3 and comparative examples are shown in fig. 7.
Fig. 7 the structure of the test sample is: ITO/ZnO/CsPbI 2 Br (comparative); ITO/ZnO-CsAc/CsPbI 2 Br (example 1); ITO/ZnO-CsF/CsPbI 2 Br (example 2); ITO/ZnO-CsTFA/CsPbI 2 Br (example 3);
as can be seen from the curve of FIG. 7, csPbI is modified by the buried additive 2 The light-absorbing layer of the Br inorganic perovskite shows faster PL extraction, which shows that the bottom-burying additive improves ZnO and CsPbI 2 The extraction and transport capability of electrons between Br interfaces, which is advantageous for suppressing charge non-radiative recombination.
7. J-V characteristic curve of carbon-based inorganic perovskite solar cell
J-V characteristic curves of the carbon-based inorganic perovskite solar cells of examples 1-3 and comparative example are shown in FIG. 8, and the test condition of FIG. 8 is standard simulated sunlight AM 1.5 (100 mW cm) -2 ) The temperature was 25 ℃ and the Relative Humidity (RH) was 20%. The effective device area of the carbon-based inorganic perovskite solar cell in fig. 8 is: 0.09cm 2 . Table 2 summarizes the optoelectronic performance parameters corresponding to the J V characteristic curve in fig. 8, including: open circuit voltage (V) oc ) Short circuit current density (J) sc ) A Fill Factor (FF), and a PCE.
Table 2 shows the photoelectric performance parameters corresponding to the J V characteristic curve of FIG. 8
| Solar cell | V oc (V) | J sc (mA cm -2 ) | FF | PCE(％) |
| ZnO | 1.201 | 14.71 | 0.669 | 11.82 |
| ZnO-CsAc | 1.253 | 14.86 | 0.736 | 13.70 |
| ZnO-CsF | 1.259 | 14.92 | 0.743 | 13.96 |
| ZnO-CsTFA | 1.269 | 14.95 | 0.751 | 14.25 |
As can be seen from fig. 8 and table 2, the PCE of the carbon-based inorganic perovskite solar cell modified with the under-fill additive is improved. In particular, devices based on a ZnO-CsTFA electron transport layer have a PCE as high as 14.25%, far exceeding that of devices based on a ZnO electron transport layer (11.82%). As can be seen in FIG. 8 and Table 2, the improved PCE is primarily due to V oc 、J sc And simultaneous improvement of FF.
8. Humidity stability of carbon-based inorganic perovskite solar cells
The humidity stability graphs of the carbon-based inorganic perovskite solar cells in examples 1-3 and the comparative example are shown in fig. 9, and it can be seen from fig. 9 that the humidity stability of the carbon-based inorganic perovskite solar cells is improved through modification by the under-filling additive, which is attributed to the improvement of the quality of the ZnO electron transport layer and the inorganic perovskite light absorption layer thin films.
Finally, it should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A substrate-embedded additive modified carbon-based inorganic perovskite solar cell, comprising: the transparent conductive substrate, the electron transmission layer, the inorganic perovskite light absorption layer and the carbon electrode are sequentially arranged from bottom to top and connected; the electron transport layer is ZnO doped with a burying bottom additive, and the burying bottom additive is one of cesium acetate (CsAc), cesium fluoride (CsF) and cesium trifluoroacetate (CsTFA).
2. The carbon-based inorganic perovskite solar cell modified by the buried additive according to claim 1, wherein the thickness of the electron transport layer is 25-50 nm.
3. The carbon-based inorganic perovskite solar cell modified by the burial additive as claimed in claim 1, wherein the transparent conductive substrate is ITO conductive glass, and the thickness of the transparent conductive substrate is 1-1.1 mm.
4. The substrate-embedded additive modified carbon-based inorganic perovskite solar cell as claimed in claim 1, wherein the inorganic perovskite light absorption layer is CsPbI 2 Br, and the thickness of the inorganic perovskite light absorption layer is 350-450 nm.
5. The carbon-based inorganic perovskite solar cell modified by the burial additive as claimed in claim 1, wherein the thickness of the carbon electrode is 10-25 μm.
6. A method for preparing a carbon-based inorganic perovskite solar cell modified with a burial additive according to any one of claims 1-5, wherein the method comprises the following steps:
s1, cleaning, drying and ultraviolet ozone treating a transparent conductive substrate to obtain a cleaned transparent conductive substrate;
s2, preparing a ZnO electron transport layer precursor solution, and adding the bottom-burying additive with the concentration of 1.0-4.0 mg/ml to obtain a ZnO electron transport layer precursor solution doped with the bottom-burying additive; then, spin-coating the ZnO electron transport layer precursor solution doped with the bottom-burying additive on the surface of the cleaned transparent conductive substrate, and performing first annealing to obtain the ZnO electron transport layer doped with the bottom-burying additive;
s3, preparing a precursor solution of the inorganic perovskite light absorption layer, spin-coating the precursor solution on the surface of the ZnO electron transport layer doped with the bottom-buried additive, and performing second annealing to obtain the inorganic perovskite light absorption layer;
s4, coating conductive carbon slurry on the surface of the light absorption layer of the inorganic perovskite, and performing third annealing to form a carbon electrode, so as to obtain the carbon-based inorganic perovskite solar cell modified by the buried additive.
7. The method of claim 6, wherein the conditions of the first anneal comprise: annealing at 40-150 deg.c for 30-60 min.
8. The method of claim 6, wherein the second annealing conditions comprise: annealing at 40-60 deg.c for 2-5 min and then at 160-180 deg.c for 10-30 min.
9. The method of claim 6, wherein the third annealing conditions comprise: annealing at 90-120 deg.c for 10-30 min.
10. The method according to claim 6, characterized in that said steps S1 and S2 are carried out in an air environment; said steps S3 and S4 are at N 2 And finishing in a glove box.
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