CN115943187A - Composition for film encapsulation - Google Patents
Composition for film encapsulation Download PDFInfo
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- CN115943187A CN115943187A CN202180044408.7A CN202180044408A CN115943187A CN 115943187 A CN115943187 A CN 115943187A CN 202180044408 A CN202180044408 A CN 202180044408A CN 115943187 A CN115943187 A CN 115943187A
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- 239000000203 mixture Substances 0.000 title claims abstract description 56
- 238000005538 encapsulation Methods 0.000 title claims description 31
- 229920000734 polysilsesquioxane polymer Polymers 0.000 claims abstract description 62
- 125000000524 functional group Chemical group 0.000 claims abstract description 22
- -1 siloxane backbone Chemical group 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 100
- 239000000178 monomer Substances 0.000 claims description 46
- 239000010409 thin film Substances 0.000 claims description 33
- 238000007789 sealing Methods 0.000 claims description 20
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 19
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 claims description 13
- 125000001931 aliphatic group Chemical group 0.000 claims description 13
- 125000000217 alkyl group Chemical group 0.000 claims description 8
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 claims description 8
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 claims description 7
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 claims description 7
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 claims description 6
- 238000006068 polycondensation reaction Methods 0.000 claims description 5
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 claims description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 3
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 claims description 3
- RZVINYQDSSQUKO-UHFFFAOYSA-N 2-phenoxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC1=CC=CC=C1 RZVINYQDSSQUKO-UHFFFAOYSA-N 0.000 claims description 3
- OXYZDRAJMHGSMW-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCCl OXYZDRAJMHGSMW-UHFFFAOYSA-N 0.000 claims description 3
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 claims description 3
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 claims description 3
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 claims description 3
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 claims description 3
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 claims description 3
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 3
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 claims description 3
- KQAHMVLQCSALSX-UHFFFAOYSA-N decyl(trimethoxy)silane Chemical compound CCCCCCCCCC[Si](OC)(OC)OC KQAHMVLQCSALSX-UHFFFAOYSA-N 0.000 claims description 3
- SCPWMSBAGXEGPW-UHFFFAOYSA-N dodecyl(trimethoxy)silane Chemical compound CCCCCCCCCCCC[Si](OC)(OC)OC SCPWMSBAGXEGPW-UHFFFAOYSA-N 0.000 claims description 3
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 claims description 3
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 claims description 3
- NMEPHPOFYLLFTK-UHFFFAOYSA-N trimethoxy(octyl)silane Chemical compound CCCCCCCC[Si](OC)(OC)OC NMEPHPOFYLLFTK-UHFFFAOYSA-N 0.000 claims description 3
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 claims description 3
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 claims description 2
- 238000012643 polycondensation polymerization Methods 0.000 claims description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 19
- 239000002904 solvent Substances 0.000 description 17
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 15
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 12
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 11
- 238000005259 measurement Methods 0.000 description 11
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 8
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 8
- 238000005481 NMR spectroscopy Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000000016 photochemical curing Methods 0.000 description 7
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- 238000012790 confirmation Methods 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000002902 bimodal effect Effects 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 2
- 235000019341 magnesium sulphate Nutrition 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 239000013557 residual solvent Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F230/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
- C08F230/04—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
- C08F230/08—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F283/00—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G
- C08F283/12—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G on to polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F283/00—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G
- C08F283/12—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G on to polysiloxanes
- C08F283/124—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G on to polysiloxanes on to polysiloxanes having carbon-to-carbon double bonds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
- C08G77/18—Polysiloxanes containing silicon bound to oxygen-containing groups to alkoxy or aryloxy groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Paints Or Removers (AREA)
- Electroluminescent Light Sources (AREA)
- Sealing Material Composition (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Silicon Polymers (AREA)
Abstract
The present invention relates to a solvent-free film encapsulating composition comprising ladder-type polysilsesquioxane having a photocurable functional group attached to a siloxane backbone, and a film encapsulating layer prepared therefrom.
Description
Technical Field
The present invention relates to a solvent-free film encapsulating composition exhibiting low dielectric properties and a film encapsulating layer prepared using the same.
Background
With the development of the IT industry and the intelligent information society, the display field shows a dramatic growth. Recently, attention has been paid to a thin film encapsulation layer for protecting a Light Emitting layer applied to an Organic Light Emitting Diode (OLED) or a Quantum dot Light Emitting Diode (QLED) from moisture, oxygen, or the like.
In addition, a thin film transistor layer, a display panel including a light emitting layer, a thin film encapsulation layer, a touch panel, and a glass cover plate are sequentially assembled in a flexible display manufactured by using a flexible substrate, wherein the thin film encapsulation layer is formed of a very thin film, and the touch panel and the display panel are close enough to each other, so that electrical interference is generated between the touch panel and the display panel. Such interference is a cause of RC delay (RC delay) and there is a problem of greatly reducing the overall performance of the touch panel and the display.
On the other hand, a method of forming a multilayer encapsulation film is described in patent publication No. 2014-0130016, but the multilayer encapsulation film has disadvantages in that it requires continuous transfer and a large amount of time for depositing the film because deposition occurs in a separate apparatus.
Documents of the prior art
Patent document
Patent document 1: patent laid-open publication No. 2014-0130016
Disclosure of Invention
Technical problem
The present invention is directed to limit electrical interference generated in a display by imparting low dielectric properties to a thin film encapsulation layer using a solventless thin film encapsulation composition exhibiting low dielectric properties.
Means for solving the problems
In order to solve the above problems, the present inventors have invented a solvent-free film encapsulating composition exhibiting low dielectric properties by mixing ladder-type polysilsesquioxane in which a photocurable functional group is linked to a siloxane backbone to lower overall dielectric characteristics.
The photocurable functional group may be a (meth) acrylic group.
The ladder-shaped polysilsesquioxane may be formed by polycondensation of a trimethoxy silane monomer (a) not including a photocurable functional group and a trimethoxy silane monomer (B) including a photocurable functional group.
The monomer (A) may be at least one selected from methyltrimethoxysilane, propyltrimethoxysilane, hexyltrimethoxysilane, octyltrimethoxysilane, decyltrimethoxysilane, dodecyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-chloropropyltrimethoxysilane, vinyltrimethoxysilane, 3-aminopropyltrimethoxysilane and phenyltrimethoxysilane.
The above-mentioned monomer (A) may contain an aliphatic chain.
The monomer (B) may be at least one of propyl 3- (trimethoxysilyl) acrylate and propyl 3- (trimethoxysilyl) methacrylate.
The terminal group of the ladder-shaped polysilsesquioxane may be substituted with an alkyl group.
The monomer (a) and the monomer (B) may be in a range of 0:10 to 9:1, polycondensation.
The monomer (a) and the monomer (B) may be mixed in a ratio of 0:10 to 4:6 in a molar ratio.
The solvent-free film sealing composition may further include a monomer (C) containing a (meth) acrylic group, and the (meth) acrylic group of the monomer may be polymerized with the photocurable functional group by UV photopolymerization.
The monomer (C) may be one or more selected from 2-ethylhexyl acrylate, butyl acrylate, methyl methacrylate, methyl acrylate, ethyl acrylate, ethylene glycol phenyl ether acrylate, acrylic acid, 2-hydroxyethyl methacrylate and pentaerythritol triacrylate.
The content of the above monomer (C) may be 10 to 90% by weight with respect to the total composition.
The invention also relates to a film packaging layer prepared by using the solvent-free film packaging composition.
The dielectric constant of the thin film encapsulation layer can be less than 3.5.
ADVANTAGEOUS EFFECTS OF INVENTION
The solvent-free film packaging composition can endow the film packaging layer with low dielectric property, and can effectively block the electric interference generated between the touch panel and the display panel by using the film packaging layer.
Drawings
FIG. 1 shows an example of the synthesis of ladder-type polysilsesquioxane.
Fig. 2 shows an internal structure of a display including a film encapsulation layer prepared using the solvent-free film encapsulation composition.
FIG. 3 shows the measurement results of Fourier transform infrared spectroscopy (FT-IR spectroscopy) of example 1.
FIG. 4 shows the result of X-ray diffraction (XRD) analysis of example 1.
Fig. 5 illustrates a metal-insulator-metal (MIM) structured parallel plate capacitor.
Fig. 6 shows a schematic view of a process of forming a thin film encapsulation layer using a solventless thin film encapsulating composition and a solvent thin film encapsulating composition.
Fig. 7 shows the results of comparing the film morphology (morphology) of a solvent-free type film prepared using the solvent-free film encapsulating composition and a solvent type film prepared using the solvent film encapsulating composition.
FIG. 8 shows the measurement result of Fourier transform infrared spectroscopy (FT-IR spectroscopy) of example 3.
FIG. 9 shows the results of measurement of Nuclear Magnetic Resonance (NMR) in example 3.
Fig. 10 shows the lifetime results of the organic light emitting diode devices incorporating example 1 and example 3, respectively.
Detailed Description
The solvent-free film encapsulating composition of the present invention may comprise ladder-type polysilsesquioxane having a photocurable functional group attached to a siloxane backbone.
Herein, "solvent-free" means that an organic solvent is not used when a thin film encapsulation layer is prepared from the thin film encapsulation composition.
By not using an organic solvent, an increase in dielectric constant due to a trace amount of solvent remaining after coating of the composition can be prevented, and thus the dielectric constant of the film can be further reduced.
The solvent-type film prepared using the solvent-free film sealing composition has an advantage of no occurrence of cracks, while the solvent-free film prepared using the solvent-free film sealing composition has an advantage of no occurrence of cracks. The cracks reduce the film sealing property of the film by permeating external oxygen and moisture.
Fig. 6 shows a schematic view of a process of forming a thin film encapsulation layer using a solvent-free thin film encapsulation composition and a solvent thin film encapsulation composition. As shown in fig. 6, if the solvent film sealing composition is used, a step of drying the solvent after forming a film on the ITO glass substrate by the blade coater is additionally required, for example, a step of drying the solvent at a temperature of 80 ℃ for 1 minute is additionally required. That is, if the solvent-free film sealing composition is used, an additional drying process is not required, and thus the film sealing layer can be efficiently and economically prepared.
In one embodiment of the present invention, examples of the organic solvent may include ethyl acetate, tetrahydrofuran, dichloromethane, and the like.
The solvent-free film encapsulating composition of the present invention can exhibit low dielectric properties by regularly arranging the above-described ladder-shaped polysilsesquioxane. Also, the present invention is advantageous in that the photo-curing functional group of polysilsesquioxane is further reacted with an acrylic monomer to form a low dielectric film, and at the same time, the film becomes soft and has excellent film stability against film formation or external impact.
In one embodiment of the present invention, the photo-curable functional group may preferably be a (meth) acrylic group. Wherein the (meth) acrylic group means a methacryloyl group or an acrylic group. If a (meth) acrylic group is used as the photo-curing functional group, a variety of additional linking structures can be easily incorporated into the ladder-shaped polysilsesquioxane base structure.
In one embodiment of the present invention, the ladder polysilsesquioxane may comprise fatty chains. For example, the aliphatic chain may be a substituted or unsubstituted straight or branched aliphatic hydrocarbon chain having 6 to 20 carbon atoms, but is not limited thereto. For example, the linear aliphatic hydrocarbon chain may include an unsubstituted alkyl group having 6 to 20 carbon atoms, and the branched aliphatic hydrocarbon chain may include any one selected from the group consisting of a trimethoxy (2-methylpentyl) silyl group, a trimethoxy (2-methylheptyl) silyl group, a trimethoxy (2-methylnonyl) silyl group, and a trimethoxy (2-methylundecyl) silyl group.
In the case where the ladder polysilsesquioxane includes a fatty chain, the film may exhibit lower dielectric values due to the non-polarity of the fatty chain moiety. Also, since the aliphatic chain has high hydrophobicity, the lifetime of the device can be improved by effectively blocking external moisture. Therefore, a film encapsulation effect with improved performance can be obtained. The fatty chain may be derived from the fatty chain of the monomer (A) described below.
In the present invention, the ladder polysilsesquioxane may be formed by condensation polymerization of a trimethoxy silane monomer (a) not including a photocuring functional group and a trimethoxy silane monomer (B) including a photocuring functional group.
In one embodiment of the present invention, the monomer (A) may be one or more of methyltrimethoxysilane, propyltrimethoxysilane, hexyltrimethoxysilane, octyltrimethoxysilane, decyltrimethoxysilane, dodecyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-chloropropyltrimethoxysilane, vinyltrimethoxysilane, 3-aminopropyltrimethoxysilane and phenyltrimethoxysilane, but is not limited thereto.
In an embodiment of the present invention, the monomer (a) may include an aliphatic chain, but is not limited thereto. For example, the aliphatic chain may be a substituted or unsubstituted straight or branched aliphatic hydrocarbon chain having 6 to 20 carbon atoms, but is not limited thereto. For example, the linear aliphatic hydrocarbon chain may include an unsubstituted alkyl group having 6 to 20 carbon atoms, and the branched aliphatic hydrocarbon chain may include any one selected from the group consisting of a trimethoxy (2-methylpentyl) silyl group, a trimethoxy (2-methylheptyl) silyl group, a trimethoxy (2-methylnonyl) silyl group, and a trimethoxy (2-methylundecyl) silyl group.
In one embodiment of the present invention, the monomer (B) may be one or more of 3- (trimethoxysilyl) propyl acrylate and 3- (trimethoxysilyl) propyl methacrylate, but is not limited thereto.
FIG. 1 shows an example of the synthesis of ladder-type polysilsesquioxane. As shown in fig. 1, ladder polysilsesquioxane may be synthesized by polymerizing methyltrimethoxysilane corresponding to trimethoxysilane monomer (a) not including a photocuring functional group and trimethoxysilane monomer (B) including a photocuring functional group.
In one embodiment of the present invention, the monomer (a) and the monomer (B) may be present in a ratio of 0:10 to 9:1, preferably, may be polycondensed at a molar ratio of 0:10 to 4:6 by polycondensation. In the case where the molar ratio of the monomer (a) to the monomer (B) satisfies the above range, the dielectric constant and viscosity decrease, and thus it is advantageous to form a low dielectric film.
In one embodiment of the present invention, the solvent-free film sealing composition of the present invention may further comprise a (meth) acrylic group-containing monomer (C), and the (meth) acrylic group of the monomer may be polymerized with the photo-curing functional group by UV photopolymerization. In the case of additionally including the (meth) acrylic group-containing monomer (C), the film becomes soft and has excellent film stability in terms of film formation or external impact.
In an embodiment of the present invention, the monomer (C) may be one or more of 2-ethylhexyl acrylate, butyl acrylate, methyl methacrylate, methyl acrylate, ethyl acrylate, ethylene glycol phenyl ether acrylate, acrylic acid, 2-hydroxyethyl methacrylate, and pentaerythritol triacrylate, but is not limited thereto.
In one embodiment of the present invention, the content of the monomer (C) may be 10 to 90 weight percent, preferably, may be 10 to 50 weight percent, with respect to the total composition. When the content of the monomer (C) is within the above range, film characteristics of low dielectric constant and high flexibility can be obtained.
In one embodiment of the present invention, the terminal group of the ladder-shaped polysilsesquioxane may be substituted with an alkyl group. The alkyl group may be, for example, an alkyl group having 1 to 12 carbon atoms, but is not limited thereto. In the case where the terminal group of the ladder-type polysilsesquioxane is substituted with an alkyl group, the nonpolar and hydrophobic portions of the ladder-type polysilsesquioxane are increased, so that the film exhibits a lower dielectric constant value, and the lifetime of the device is increased, and thus a film encapsulation effect with improved performance can be obtained.
The solvent-free film encapsulating composition comprising ladder-type polysilsesquioxane of the present invention forms an internal network by UV light curing, so that a low dielectric property imparting film that can be used as a film encapsulating layer can be formed.
In an embodiment of the invention, the display may be sequentially configured with a transistor layer, a display panel including a light emitting layer, a thin film encapsulation layer, a touch panel, and a glass cover plate, as shown in fig. 2, the thin film encapsulation layer of the invention may be located between the display panel and the touch panel in the display.
Dielectric constant (dielectric constant) is a unit representing the magnitude of permittivity with vacuum as a standard, and is a measure representing the degree of charge polarization when an electric field is applied to an insulator from the outside. Therefore, the smaller the dielectric constant is, the more effectively the thin film encapsulation layer can block the electrical interaction between the display panel and the touch panel.
The dielectric constant of a thin film encapsulation layer prepared using the composition of the present invention may be less than 3.5. Under the condition that the dielectric constant is less than 3.5, the thin film packaging layer can effectively block the electrical interaction between the display panel and the touch panel. Preferably, the dielectric constant of the thin film encapsulation layer of the present invention may be less than 2.5, and more preferably, may be less than 2.0.
The present invention is not limited to the following examples.
Example 1
To a solvent in which 4.8g of Deionized water (Deionized water) and 16g of Tetrahydrofuran (THF) were mixed was added 0.04g of potassium carbonate (K) 2 CO 3 ) Thereafter, the mixture was stirred at 550rpm for 30 minutes at ordinary temperature. A mixed solution of 3.18g of Phenyltrimethoxysilane (PTMS) and 15.8g (molar ratio of 2) of propyl 3- (trimethoxysilyl) methacrylate was added to the above mixed solution at a rate of 2g/min per drop, and the mixed solution was stirred at a rotation speed of 550rpm for 5 days at normal temperature. After completion of the stirring, the synthesized substance was recovered by evaporating the solvent. Then, it was dissolved again in 100ml of Dichloromethane (DCM) and washed 3 times with deionized water through a separatory funnel to separate the non-synthesized particles in the recovered material. To the purified solution was added an excess of magnesium sulfate (MgSO) 4 ) Residual deionized water was removed and then dried in a vacuum oven at a temperature of 60 ℃ for 24 hours to prepare 2:8 ladder Polysilsesquioxane (PSSQ).
Confirmation of trapezoidal Polysilsesquioxane (PSSQ) Synthesis
Fourier transform-induced spectroscopy (FT-IR spectroscopy) was measured to confirm that 2: whether 8 trapezoidal PSSQ is synthesized.
FIG. 3 shows the measurement result of Fourier transform infrared spectroscopy (FT-IR spectroscopy) of example 1. As shown in FIG. 3, it can be seen from the measurement result of FT-IR that the measurement was carried out at 1035cm -1 To 1107cm -1 Typical bimodal absorption peaks of the trapezoidal structure where PSSQ can be identified arise due to stretching vibrations of the siloxane bonds in both the vertical (-Si-O-R-) and horizontal (-Si-O-Si-) directions of PSSQ. Further, C = O (1715 cm) corresponding to an acrylic group as a functional group of the trapezoidal PSSQ was observed -1 ) Peak and C = C (1636 cm) -1 ) Peak, si-Ph corresponding to phenyl group (1588 cm) -1 ) Peak(s).
Confirming the detailed Structure of ladder Polysilsesquioxane (PSSQ)
X-ray diffraction (XRD) analysis was performed to confirm that 2: detailed structure of 8 ladder PSSQ.
FIG. 4 shows the result of X-ray diffraction (XRD) analysis of example 1. As shown in FIG. 4, 6.2 ° (A) and 20.5 ° (B) in XRD mean the average distance between molecules and the average thickness of the main chain of the trapezoidal PSSQ in the vertical direction, and the values of the distances are expressed as
Confirmation of dielectric constant of film
The mixture of 2 of example 1: the composition of 8-trapezoidal PSSQ and IRGACURE 651 as a photoinitiator was applied to an Indium Tin Oxide (ITO) glass substrate to form a thin film, and then cured by exposure to 3J of energy using a UV irradiation device to prepare a thin film.
The composition for film formation was prepared by mixing 0.3g of Tetrahydrofuran (THF), 0.693g of 2: PSSQ 8 trapezoid and IRGACURE 651 0.007g were prepared and stirred at 600rpm for 3 hours at ambient temperature and then dried in a vacuum oven at 60 ℃ for 24 hours to remove the solvent Tetrahydrofuran (THF). The Tetrahydrofuran (THF) mentioned above is used to convert 2: the 8-trapezoidal PSSQ was prepared as a thin film and was removed by the above-described drying procedure.
By mixing Al (1 cm) 2 ) Deposited on the above 2: a parallel plate capacitor of metal-insulator-metal (MIM) structure as shown in fig. 5 was fabricated on the 8-trapezoidal PSSQ film to measure the permittivity and dielectric constant of the film. The thickness and capacitance of the film were measured, and the dielectric constant and dielectric constant were calculated from these values. The results are shown in table 1 below.
TABLE 1
| Thickness (μm) | Capacitors (F) | Dielectric constant (F/m) | Dielectric constant k | |
| Example 1 | 62 | 2.41×10 -11 | 1.50×10 -11 | 1.690 |
2: the 8-ladder PSSQ film exhibits a fairly low k value dielectric constant.
Example 2
The 2: the PSSQ with 8-trapezoid and IRG cure 651 as a photoinitiator were added to pentaerythritol triacrylate (PETA) as a monomer, and uniformly mixed, and the content of pentaerythritol triacrylate (PETA) was adjusted as shown in table 2 below.
Then, a film was prepared by the same method as example 1 except that the photoinitiator was added in an amount of 0.7 weight percent of the total composition to determine the dielectric constant and the dielectric constant of the prepared low dielectric film encapsulating composition.
The thickness and capacitance of the film were measured by preparing a parallel plate capacitor in the same manner as in example 1, and the dielectric constant and permittivity were calculated using these values to measure the permittivity and permittivity of the film of example 2.
The flexibility of the film was evaluated by performing a film bending test in the following manner.
Each of the prepared films was cut into test pieces having a length of 120mm, and the test pieces were repeatedly bent in accordance with ISO 8776/2-1988, and the number of repeated bending until the test pieces were broken was measured.
Very good: the number of bending times is more than 100
O: the number of bending times is 10 or more and less than 100
The results are shown in table 2 below.
TABLE 2
Compared to example 1, 2: the dielectric constant of the reference example of 8-ladder PSSQ is very large.
The smaller the PETA content, i.e. 2: the higher the content of 8-trapezoid PSSQ, the smaller the dielectric constant, and the larger the content of PETA, i.e. 2: the lower the PSSQ content of 8 trapezoid, the more excellent the flexibility of the film.
The films of example 2-1 and example 2-2, in which the contents of pentaerythritol triacrylate (PETA) were 90 wt% and 70 wt%, respectively, had a large dielectric constant, but the films were very soft.
In the case where the content of pentaerythritol triacrylate (PETA) of examples 2-3 to 2-5 is 50 to 90 wt%, it can be confirmed that the dielectric constant is maintained at a low level of less than 3.5 while the flexibility of the film is excellent.
Example 3
A trapezoidal PSSQ was prepared by the same method as example 1, except that Hexyltrimethoxysilane (HTMS) was used instead of Phenyltrimethoxysilane (PTMS), to prepare 2:8 trapezoidal hexyl PSSQ. The molar ratio of Hexyltrimethoxysilane (HTMS) to 3- (trimethoxysilyl) propyl methacrylate used was 2:8.
2g of prepared 2: after 5 weight percent of the trapezoidal hexyl PSSQ powder was dissolved in an anhydrous tetrahydrofuran solvent, 0.04mL of trimethylchlorosilane and 0.04mL of triethylamine were added together and stirred at a temperature of 40 ℃ for 4 hours to adjust the ratio of 2: the end of the 8 trapezoidal hexyl PSSQ is substituted with a methyl group. After completion of the stirring, the synthesized material was recovered by evaporating the solvent. Then, the non-synthesized particles were separated from the recovered material, re-dissolved in 100ml of Dichloromethane (DCM) and washed 3 times with deionized water through a separatory funnel. To the purified solution was added an excess of magnesium sulfate (MgSO) 4 ) Residual deionized water was removed and then dried in a vacuum oven at a temperature of 60 ℃ for 24 hours to prepare 2:8 trapezoidal hexyl PSSQ.
Confirmation of Synthesis of trapezoidal hexyl Polysilsesquioxane (PSSQ)
Fourier transform-induced spectroscopy (FT-IR spectroscopy) was measured to confirm that 2: whether 8 trapezoidal hexyl PSSQ was synthesized.
FIG. 8 shows the measurement result of Fourier transform infrared spectroscopy (FT-IR spectroscopy) of example 3. As shown in FIG. 8, it can be seen from the measurement result of FT-IR that the peak value was 1035cm -1 To 1107cm -1 Typical bimodal absorption peaks of the trapezoidal structure, which confirm PSSQ, arise from stretching shocks of siloxane bonds in the PSSQ vertical (-Si-O-R-) and horizontal (-Si-O-Si-) directions. Further, C = O (1716 cm) corresponding to an acrylic group as a functional group of the trapezoidal PSSQ was observed -1 ) Peak and C = C (1642 cm) -1 ) Peak, C-H equivalent to hexyl group (2949 cm) -1 ) And (4) peak.
And (3) confirmation 2: whether or not the terminal group of 8-ladder hexyl Polysilsesquioxane (PSSQ) is substituted
Nuclear Magnetic Resonance (NMR) analysis was performed to confirm that 2: whether the end group of 8 trapezoidal hexyl PSSQ is substituted.
FIG. 9 shows the results of measurement of Nuclear Magnetic Resonance (NMR) in example 3. As shown in FIG. 9, it was confirmed from the results of NMR measurement that Si- (CH) substituted at the PSSQ terminal group was observed at 0.08ppm 3 ) 3 Trapezoid 2: the end group of 8 hexyl PSSQ was substituted with methyl.
Confirmation of dielectric constant of film
The thickness and capacitance of the film were measured by preparing a parallel plate capacitor in the same manner as in example 1, and the permittivity and dielectric constant of the film of example 3 were measured by calculating the permittivity and dielectric constant from these values.
TABLE 3
| Thickness (μm) | Capacitor (F) | Dielectric constant (F/m) | Dielectric constant K | |
| Example 3 | 50 | 2.68×10 -11 | 1.34×10 -11 | 1.514 |
It was confirmed that example 3 exhibited a lower dielectric constant k than example 1 by introducing an aliphatic chain structure and substituting the terminal group with a methyl group.
Confirmation of film encapsulation layer Performance
The mixture of 2: a composition of 8 trapezoidal hexyl PSSQ and IRGACURE 651 as a photoinitiator was applied to an organic light emitting diode device to form a thin film, and then the resultant was irradiated with a UV irradiation device at 4J/cm 2 Is exposed to energy and cured to prepare the thin film package.
The luminance of the organic light emitting diode device was measured by a Transient EL measurement system (Transient EL measurement system) apparatus as a function of time to measure the lifetime of the organic light emitting diode device due to the image of the thin film encapsulation layer.
Fig. 10 shows the lifetime results of the organic light emitting diode devices incorporating example 1 and example 3, respectively. The time required for decreasing the initial luminance (100%) to half (50%) was defined as the half-life, and as shown in fig. 10, it was confirmed that example 3 exhibited a half-life increased by 14 to 15 times as compared with example 1.
Comparative example 1
0.182g of 2 prepared in example 1: the PSSQ of 8 trapezoid, 0.818g of ethyl acetate as solvent and 0.07g of IRGACURE 65 as photoinitiator were mixed, stirred at 600rpm for 3 hours at normal temperature to prepare a solvent composition, and after forming a thin film on an ITO glass substrate by a blade coater, dried at 80 ℃ for 1 minute.
Then, a film was prepared by curing by exposure to light of 3J using a UV irradiator by the same method as in example 1.
The thickness and capacitance of the thin film were measured by preparing a parallel plate capacitor in the same manner as in example 1, and the dielectric constant and permittivity were calculated using these values to measure the permittivity and permittivity of the thin film of comparative example 1. The results are shown in Table 4 below.
TABLE 4
| Thickness (μm) | Capacitor (F) | Dielectric constant (F/m) | Dielectric constant K | |
| Comparative example 1 | 21 | 7.80×10 -11 | 1.64×10 -11 | 1.851 |
With solvent-free 2 of example 1 above: 8 trapezoidal PSSQ film (Solvent-free type), solvent 2 of comparative example 1: the 8-trapezoidal PSSQ film exhibits a higher dielectric constant value.
In the case of comparative example 1, it is considered that the dielectric constant is lowered due to a trace amount of the residual solvent, but a defect of film cracking occurs due to natural evaporation of the trace amount of the residual solvent, and such cracking deteriorates the film sealing property of the film by permeation of external oxygen and moisture.
Fig. 7 shows the results of comparing the film morphology (morphology) of a solventless film prepared using the solventless film encapsulating composition and a solvent-based film prepared using the solvent film encapsulating composition.
As shown in fig. 7, cracks occurred in the solvent-type film prepared using the solvent-free film sealing composition, whereas cracks did not occur in the solvent-free film prepared using the solvent-free film sealing composition.
Claims (14)
1. A solvent-free film encapsulating composition comprising a ladder polysilsesquioxane having photocurable functional groups attached to a siloxane backbone.
2. The solvent-free film sealing composition according to claim 1, wherein the photocurable functional group is a (meth) acrylic group.
3. The solvent-free film sealing composition according to claim 1, wherein the ladder-type polysilsesquioxane is obtained by condensation polymerization of a trimethoxysilane monomer (A) having no photocurable functional group and a trimethoxysilane monomer (B) having a photocurable functional group.
4. The composition for solventless film encapsulation according to claim 3, wherein the monomer (A) is at least one selected from the group consisting of methyltrimethoxysilane, propyltrimethoxysilane, hexyltrimethoxysilane, octyltrimethoxysilane, decyltrimethoxysilane, dodecyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-chloropropyltrimethoxysilane, vinyltrimethoxysilane, 3-aminopropyltrimethoxysilane and phenyltrimethoxysilane.
5. The solvent-free film sealing composition according to claim 4, wherein the monomer (A) contains an aliphatic chain.
6. The solvent-free film sealing composition according to claim 3, wherein the monomer (B) is at least one of 3- (trimethoxysilyl) propyl acrylate and 3- (trimethoxysilyl) propyl methacrylate.
7. The solvent-free film sealing composition according to claim 3, wherein the terminal group of said ladder-type polysilsesquioxane is substituted with an alkyl group.
8. The solvent-free film sealing composition according to claim 3, wherein the ratio of the monomer (A) to the monomer (B) is 0:10 to 9:1, polycondensation.
9. The solvent-free film sealing composition according to claim 8, wherein the ratio of the monomer (A) to the monomer (B) is in the range of 0:10 to 4:6 by polycondensation.
10. The solvent-free film sealing composition according to claim 1, further comprising a monomer (C) having a (meth) acrylic group, wherein the (meth) acrylic group of the monomer (C) is polymerized with the photocurable functional group by UV photopolymerization.
11. The composition for solventless film encapsulation according to claim 10, wherein the monomer (C) is at least one selected from the group consisting of 2-ethylhexyl acrylate, butyl acrylate, methyl methacrylate, methyl acrylate, ethyl acrylate, ethylene glycol phenyl ether acrylate, acrylic acid, 2-hydroxyethyl methacrylate and pentaerythritol triacrylate.
12. The solvent-free film sealing composition according to claim 11, wherein the content of the monomer (C) is 10 to 90% by weight based on the total composition.
13. A film encapsulating layer prepared using the solvent-free film encapsulating composition according to any one of claims 1 to 12.
14. The thin film encapsulation layer of claim 13, wherein the dielectric constant of the thin film encapsulation layer is less than 3.5.
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| PCT/KR2021/007856 WO2021261900A1 (en) | 2020-06-23 | 2021-06-23 | Thin film encapsulating composition |
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| JP2023531739A (en) | 2023-07-25 |
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| WO2021261900A1 (en) | 2021-12-30 |
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