CN115876840B - Gas detection system, detection method and detection equipment integrating sensing and storage - Google Patents
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Abstract
The application provides a gas detection system, a detection method and detection equipment integrating sensing and storage, which relate to the technical field of gas detection and comprise the following steps: the gas sensor group, the analog front-end circuit and the RRAM integrated circuit are integrated; the gas sensor group is used for collecting environmental data to be detected; the analog front-end circuit is used for converting the environmental data to be detected into voltage distribution images and transmitting the voltage distribution images to the RRAM storage integrated circuit; the RRAM integrated circuit is used for obtaining a gas detection result according to the voltage distribution image. The application can improve the calculation speed and the energy efficiency of the gas detection system and reduce the system cost.
Description
Technical Field
The application relates to the technical field of gas detection, in particular to a gas detection system, a detection method and detection equipment integrating sensing and storage.
Background
Along with the improvement of the air quality requirements of people and the rapid development of the Internet of things, the application requirements of the gas detection in the Internet of things are increasing. The gas detection is widely applied to the fields of intelligent home, wearable equipment, smart city, intelligent medical treatment and the like, and is an important means for improving the life quality of people.
A conventional gas detection system, as shown in fig. 1 of the drawings of the specification, generally includes a gas sensor, an analog signal processor, an analog-to-digital converter, a memory, and a digital signal processor. The analog domain signal processing is performed by the gas sensor and the analog signal processor, the analog signal is converted into the digital signal by the analog-to-digital converter, and then the digital domain signal processing is performed by the memory and the digital signal processor, the digital signal processor of the traditional gas detection system is usually based on a von neumann architecture, and the memory and the arithmetic unit are separated, so that a great amount of energy consumption problems caused by data handling are generated in the calculation process of mass data of the sensor. In addition, the problems of signal transmission delay, quantization noise introduced in the analog-to-digital conversion process, high cost and the like exist in the process.
Therefore, it is an urgent need to solve the problem to provide a gas detection system with low energy consumption and high energy efficiency.
Disclosure of Invention
In view of the above, the present application aims to provide a gas detection system, a detection method and a detection device with integrated sensing and storage, which can solve the existing problems in a targeted manner.
Based on the above object, in a first aspect, the present application provides a gas detection system with integrated sensing and storage, comprising: the gas sensor group, the analog front-end circuit and the RRAM integrated circuit are integrated; the gas sensor group is used for collecting environmental data to be detected; the analog front-end circuit is used for converting the environmental data to be detected into voltage distribution images and transmitting the voltage distribution images to the RRAM storage integrated circuit; the RRAM integrated circuit is used for obtaining a gas detection result according to the voltage distribution image.
Optionally, the gas sensor group includes a plurality of sensor units, the RRAM computation block includes at least one RRAM computation array, each of which includes a plurality of RRAM computation units.
Alternatively, the sensor unit includes a sensor unit that detects a different gas species, or a sensor unit of a different structure that detects the same gas species.
Optionally, a resistor-to-voltage conversion circuit and an analog signal buffer; the input end of the resistance voltage conversion circuit is connected with the output end of the gas sensor group, the output end of the resistance voltage conversion circuit is connected with the input end of the analog signal buffer, and the output end of the analog signal buffer is connected with the input end of the RRAM storage and calculation integrated circuit.
Optionally, the RRAM memory integrated circuit further includes a signal post-processing module; the input end of the signal post-processing module is connected with the output end of the RRAM storage array, and the signal post-processing module is used for carrying out post-processing on the current value of the RRAM storage array to obtain the gas detection result; the method for post-processing the result calculated by the RRAM storage array comprises any one or more of quantization, threshold judgment, logic judgment and nonlinear activation of the current value of the RRAM storage array.
Optionally, the gas sensor group includes a first driving circuit, the RRAM integrated circuit includes a second driving circuit, and the first driving circuit and the second driving circuit are both word line and bit line driving circuits; the first driving circuit is used for driving each sensor unit in the gas sensor group to work, and the second driving circuit is used for driving each RRAM storage unit of the RRAM storage integrated circuit to perform read-write operation.
Optionally, the system further comprises a peripheral control circuit; the peripheral control circuit is used for controlling the operation of the gas sensor group, the analog front-end circuit and the RRAM integrated circuit, and comprises a power management module, a clock source, a clock tree and a controller.
In a second aspect, there is also provided a method of sensing a gas in a cell, the method being applied to a sensing gas detection system as defined in any one of the first aspects, the method comprising: acquiring a resistance value of the gas sensor group when the gas sensor group is in an environment to be detected; converting the resistance value into a voltage value to obtain a voltage value distribution image based on each sensor unit; taking the voltage value distribution image as input of an RRAM integrated circuit, and performing matrix operation on the voltage value distribution image through the RRAM integrated circuit to obtain a current value; and carrying out signal post-processing on the current value to obtain a gas detection result.
Optionally, each pixel point of the voltage value distribution image corresponds to a voltage value of each sensor unit, and the matrix operation is performed on the voltage value distribution image by the RRAM integrated circuit to obtain a current value, which includes: controlling the writing of each RRAM storage unit through a second driving circuit to obtain a weight matrix of the RRAM storage array; inputting the voltage value of each sensor unit to the RRAM storage array; and obtaining the current value according to the voltage value of each sensor unit and the multiply-accumulate operation of the weight matrix of the RRAM storage array.
In a third aspect, there is also provided a detection apparatus comprising a housing and a sensing and sensing integrated gas detection system according to any one of the first aspects.
Overall, the beneficial effects of the application are:
The utility model provides a sense and deposit integrative gas detection system, gather through gas sensor group and wait to detect environmental data, can respond to multiple gas characteristics simultaneously, wait to detect environmental data and change voltage distribution image through analog front end circuit, and transmit voltage distribution image to RRAM and deposit integrative circuit, can save the analog-to-digital converter in traditional gas detection system, save the system cost, improve transmission efficiency, the rethread RRAM deposits integrative circuit and obtains gas detection result according to voltage distribution image, RRAM deposits integrative circuit can also realize storage and calculation integration, solve the storage wall problem of traditional von neumann computing architecture, show the promotion energy efficiency.
Drawings
In the drawings, the same reference numerals refer to the same or similar parts or elements throughout the several views unless otherwise specified. The figures are not necessarily drawn to scale. It is appreciated that these drawings depict only some embodiments according to the disclosure and are not therefore to be considered limiting of its scope.
FIG. 1 is a schematic diagram of a prior art gas detection system;
FIG. 2 illustrates a configuration of a sense-in-compute gas detection system in accordance with an embodiment of the present application;
Fig. 3 is a schematic diagram showing the conversion of the resistance value of the gas sensor group into a voltage distribution image of the present embodiment;
FIG. 4 is a schematic diagram of a process for inputting RRAM memory arrays according to voltage distribution images according to an embodiment of the application;
FIG. 5 shows another configuration of a gas detection system of the present embodiment;
FIG. 6 shows a structural plan view of a gas sensor of the present embodiment;
Fig. 7 shows a structural cross-sectional view of a gas sensor of the present embodiment;
fig. 8 shows a schematic structural diagram of the RRAM of the present embodiment;
fig. 9 is a structural sectional view showing an RRAM memory cell of the present embodiment;
fig. 10 shows an equivalent circuit diagram of the RRAM memory cell of 1T1R of the present embodiment;
FIG. 11 shows a schematic structural diagram of an RRAM memory array consisting of RRAM memory cells of 1T 1R;
FIG. 12 is a flowchart showing the steps of a sensing and calculating integrated gas detection method according to the present embodiment;
fig. 13 shows a schematic diagram of a detection apparatus of the present embodiment.
Detailed Description
The application is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the application and are not limiting of the application. It should be noted that, for convenience of description, only the portions related to the present application are shown in the drawings.
It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other. The application will be described in detail below with reference to the drawings in connection with embodiments.
Fig. 1 shows a schematic diagram of a prior art gas detection system. As shown in fig. 1, the existing gas detection system includes two area modules of an analog domain and a digital domain, wherein a signal in the analog domain is converted into a digital signal by an analog-to-digital converter, and then the digital signal is processed by an operation in the digital domain, wherein the analog domain includes a gas sensor and an analog signal processor, and the digital domain includes a memory and a digital signal processor. As can be seen from fig. 1, the conventional gas detection system needs to convert the analog signal into the digital signal through the analog-to-digital converter, which increases the overall cost and power consumption of the system, and also causes problems of quantization noise and delay in signal transmission during the analog-to-digital conversion. In addition, digital signal processors are typically based on von neumann architecture, where the memory and the operator are separate, causing massive data of the sensor to create a lot of energy consumption problems due to data handling during the computation process.
Therefore, based on the above-mentioned problems, the embodiment of the application provides a sensing and calculating integrated gas detection system, which adopts a gas sensor group to collect environmental data, adopts a resistance change type memory (RESISTANCE RANDOM ACCESS MEMORY, RRAM) and calculating integrated circuit to directly process the analog signal, does not need an analog-to-digital converter to convert the analog signal into a digital signal, can save cost, avoids the problems of quantization noise and signal transfer delay in the analog-to-digital conversion process, and can improve the calculation speed and energy efficiency of the system. In addition, the RRAM memory array can be used for directly performing matrix multiplication and addition operation of an analog domain in a memory, and the memory and the calculation are integrated, so that the problem of a memory wall of a traditional von Neumann computing architecture is solved, and the energy efficiency of a system can be remarkably improved.
Fig. 2 shows a structure of a gas detection system of a sense and calculate integration, and referring to fig. 2, the gas detection system of a sense and calculate integration includes: the gas sensor group 01, the analog front end circuit 02 and the RRAM integrated circuit 03, wherein the output end of the gas sensor group 01 is connected with the input end of the analog front end circuit 02, the output end of the analog front end circuit 02 is connected with the input end of the RRAM integrated circuit 03, and the output end of the RRAM integrated circuit 03 is used for outputting a detection result.
In this embodiment, the gas sensor group 01 is used for collecting environmental data to be detected, the analog front-end circuit 02 is used for converting the environmental data to be detected into a voltage distribution image, and transmitting the voltage distribution image to the RRAM integrated circuit 03, and the RRAM integrated circuit 03 is used for obtaining a gas detection result according to the voltage distribution image.
As can be seen from this, in this embodiment, the sensing of the ambient gas is achieved through the gas sensor group 01, the calculation of the analog signal voltage distribution image is achieved through the RRAM integrated circuit 03, and the data storage is performed, so that the gas detection system integrating sensing, storage and calculation is obtained.
In this embodiment, the gas sensor group 01 includes a plurality of sensor units, referring to fig. 2, the gas sensor group 01 includes m×n sensor units, each sensor unit may be numbered, for example, a sensor unit (1, 1), a sensor unit (1, 2), a sensor unit (2, 1), a sensor unit (2, 2), a sensor unit (M, 1), a sensor unit (1, N), and a sensor unit (M, N), and the gas sensor group 01 is placed in an environment to be detected, and detection of gas in the environment is achieved through each sensor unit.
In this embodiment, the sensor unit includes sensor units that detect different gas species, or sensor units of different structures that detect the same gas species. When the sensor unit comprises a sensor unit for detecting different gas types, for example, the sensor unit may be a MOS gas sensor or a contact combustion type gas sensor, wherein the different sensor units may also have different sensing capabilities for different gases, for example, the gas sensor group 01 comprises a sensor unit a and a sensor unit B, wherein the sensor unit a has a stronger sensing capability for carbon monoxide and the sensor unit B has a stronger sensing capability for methane, thereby realizing the capability of the gas sensor group 01 to sense various gas characteristics and improving the sensing capability of the gas sensor group 01.
When the sensor units comprise sensor units with different structures for detecting the same gas type, the sensor units with different structures can be sensor units formed by structures with different structural parameters or different material compositions, the sensor units with different structures are adopted for detecting the same gas, sensing information of a plurality of angles can be obtained, the RRAM storage array can calculate better current values according to the sensing information of the plurality of angles, and therefore the detection result is more accurate.
As shown in fig. 2, the RRAM computationally integrated circuit includes at least one RRAM computational array 031, each of which RRAM computational array 031 includes a plurality of RRAM computational cells. In the case that the RRAM computationally integrated circuit 03 includes a plurality of RRAM computationally arrays 031, each RRAM computationally array 031 is sequentially overlapped to obtain a multi-level RRAM computationally array overlapped RRAM computational array, and the output of the RRAM computational array of the upper layer is used as the input of the RRAM computational array of the lower layer.
In this embodiment, each RRAM computing array 031 includes multiple RRAM computing units, referring to fig. 2, where the RRAM computing array includes m×n RRAM computing units, each RRAM computing unit may be numbered, such as RRAM computing unit (1, 1), RRAM computing unit (1, 2), RRAM computing unit (2, 1), RRAM computing unit (2, 2), RRAM computing unit (m, 1), RRAM computing unit (1, n), and RRAM computing unit (m, n).
It should be noted that, in this embodiment, the data of each sensor unit of the gas sensor group 01 may be formed into an array on the data representation in a marked form, so that on one hand, the transmission and processing of signals between the sensor group and the RRAM memory array may be facilitated, the speed and energy efficiency of signal transmission and processing may be improved, and on the other hand, the data of each sensor unit may be sent to the corresponding RRAM memory array to perform a comprehensive operation, so that the RRAM memory array ignores the process deviation between each sensor unit, and the problem of poor uniformity that may occur between the sensor units in the gas sensor group may be compensated.
In this embodiment, the analog front-end circuit 02 includes: the input end of the resistance voltage conversion circuit 021 is connected with the output end of the gas sensor group 01, the output end of the resistance voltage conversion circuit 021 is connected with the input end of the analog signal buffer 022, and the output end of the analog signal buffer 022 is connected with the input end of the RRAM storage integrated circuit 03. The resistance voltage conversion circuit 021 is used for converting the resistance value of the gas sensor group 01 into a voltage value and sending the voltage value to the analog signal buffer 022, wherein the analog signal buffer 022 stores the voltage value corresponding to each gas sensor unit, and outputs a voltage distribution image after the voltage values of all the gas sensors are acquired.
Specifically, the resistor-voltage conversion circuit 021 may connect the resistor Rsensor of the sensor unit and the reference resistor Rs in series, and convert the resistor Rsensor of the sensor unit into a voltage by voltage division, where the formula of the output voltage V out of the resistor-voltage conversion circuit 021 is:
Where Vout is the output voltage and Vref is the reference voltage.
The resistor-to-voltage conversion circuit 021 may further connect the resistor Rsensor and the reference resistor Rs of the sensor unit in series between the input and the output of the operational amplifier, where the formula of the output voltage V out of the resistor-to-voltage conversion circuit 021 is:
where Vout is the output voltage, vref is the reference voltage, and R2 is the fixed resistance.
Fig. 3 shows a schematic diagram of converting the resistance value of the gas sensor group 01 into a voltage distribution image, referring to fig. 3, each pixel point of the voltage distribution image represents a voltage value obtained by converting the resistance value of a sensor unit corresponding to a coordinate position, the color depth of the pixel point represents the magnitude of the voltage value, and the gas sensor group 01 is placed in different gas environments, so that different voltage distribution images can be obtained.
As shown in fig. 3, the sensor unit in the gas sensor group 01 is equivalent to a variable resistor, the gas sensor group 01 includes a plurality of resistors, such as R 11、R12、R21、R21, and the voltage distribution image is obtained after the resistance value is converted into the voltage by the resistor voltage conversion circuit 021, and the voltage values corresponding to R 11、R12、R21、R21 are V 11、V12、V21、V21 respectively.
FIG. 4 shows a schematic diagram of a process for inputting RRAM memory arrays according to voltage distribution images, wherein the RRAM memory array has a plurality of word line ends WL [1], WL [2] … … WL [ m ] corresponding to each column, a plurality of bit line ends BL [1], BL [2] … … BL [ n ] corresponding to each row, and a plurality of source line ends SL [1], SL [2] … … SL [ m ] corresponding to each row. The gating of the RRAM storage unit is controlled by controlling the switch of the transistor through the input voltage of the line ends WL [1], WL [2] … … WL [ m ], the reversible conversion of the RRAM storage unit between a high-resistance state and a low-resistance state can be realized through controlling the voltage of the bit line ends BL [1], BL [2] … … BL [ n ], the storage of the weight value in the gas classification recognition algorithm can be realized, and the corresponding current is output through the source line ends SL [1], SL [2] … … SL [ m ].
In this embodiment, the RRAM storage array performs calculation based on the gas classification recognition algorithm, where the RRAM conductance value corresponds to the weight value in the gas classification recognition algorithm, and the working principle of the RRAM storage array is as follows: the writing of each RRAM storage unit is controlled through a second driving circuit, the conductance of each RRAM storage unit is changed, so that the storage of the weight value in a gas classification recognition algorithm is realized, namely the storage of the weight value in the gas classification recognition algorithm corresponding to the RRAM conductance value is realized, a weight matrix is obtained, the voltage value corresponding to each pixel point of a voltage distribution image is input to the bit line end of the RRAM storage array, a current value is obtained according to the multiplication and accumulation operation of the voltage value of each sensor unit and the weight matrix of the RRAM storage array, and it can be understood that the current value is output through SL [ n ] according to the multiplication and accumulation operation of the voltage value of each sensor unit and the weight matrix of the RRAM storage array.
Specifically, in one example, the RRAM memory array may perform a fully connected neural network algorithm, each pixel point of the voltage distribution image is arranged into a voltage vector according to a certain sequence, the voltage vector is input to a bit line end of the first layer RRAM memory array, the voltage of each sensor unit is multiplied by the conductance of each RRAM unit, the current value of the RRAM unit may be obtained according to ohm's law, the current values of the RRAM units in each row may be added according to kirchhoff's law to obtain the current value of the row, the current value is output through SL [ n ], for example, the voltage input through BL [1], BL [2] … … BL [ n ] and the RRAM memory unit in the first row in the RRAM memory array are multiplied and accumulated to obtain the current of the first row, the current vector is output through SL [1], the current vector is obtained after each row is calculated, the current vector is converted into the voltage by the current-voltage conversion module, the current vector is obtained as the input of the second layer RRAM memory array, the current vector of the second layer RRAM memory array is obtained according to the kirchhoff's law, the current vector is calculated in the same manner as above, the current vector of the second layer memory array is obtained, the current vector is calculated, and finally, the current vector is obtained after the current vector is processed and finally, the result is processed, and finally, the current vector is obtained.
In this embodiment, the RRAM integrated circuit 03 further includes a signal post-processing module 032, where an input end of the signal post-processing module 032 is connected to an output end of the RRAM computing array 031, and is configured to receive a current value of the RRAM computing array 031, and the signal post-processing module is configured to post-process the current value of the RRAM computing array 031 to obtain a detection result. The manner of post-processing the result calculated by the RRAM memory array 031 includes any one or more of quantization, threshold judgment, logic judgment, and nonlinear activation of the current value of the RRAM memory array.
In this embodiment, the signal post-processing module 032 may include a quantizer and a nonlinear activation module, quantizes the current output by the RRAM memory array through the quantizer, uses the quantized line current data as the input of the nonlinear activation module, and obtains the detection result after the nonlinear activation of the quantized line current data through the nonlinear activation module.
The detection result may include the type and concentration of the gas, for example, the detection result is that the gas type is VOC (organic volatile gas), and the current environment contains H2S, CO, methane, hydrogen, carbon monoxide, hydrocarbon, oxynitride, and the like, and the concentration of each gas.
Fig. 5 shows another structure of a sense-all-in-one gas detection system of the present embodiment, and referring to fig. 5, in the present embodiment, a gas sensor group 01 includes a first driving circuit 05, an rram sense-all-in-one circuit 03 includes a second driving circuit 06, and the first driving circuit 05 and the second driving circuit 06 are both word line and bit line driving circuits.
The first driving circuit 05 is used for driving each sensor unit in the gas sensor group 01 to work, and each sensor unit has a corresponding address, so that the first driving circuit 05 can select addresses and select the working circuit of the sensor unit with the selected address, so that the sensor unit and the environmental gas are subjected to chemical reaction or component sensing, and the gas detection function of the sensor unit is further realized.
In this embodiment, the second driving circuit 06 is configured to drive each RRAM memory cell of the RRAM memory integrated circuit 03 to perform a read/write operation. Each RRAM storage unit has a corresponding address, and then the second driving circuit 06 is used for selecting addresses, selecting and conducting the data storage of the RRAM storage unit with the selected address, for example, realizing the storage of the weight value in the RRAM gas classification recognition algorithm corresponding to the conductance value, and selecting and conducting the working circuit of the RRAM storage unit with the selected address, so that the RRAM storage unit reads the column voltage, and conducting analog domain calculation.
In this embodiment, referring to fig. 5, the system of this embodiment further includes a peripheral control circuit 04, where the peripheral control circuit 04 is configured to control operations of the gas sensor group 01, the analog front end circuit 02, and the RRAM integrated circuit 03, and the peripheral control circuit 04 includes a power management module 041, a clock source 042, a clock tree 043, and a controller 044. The power management module 041 is used for managing power supply of the gas sensor group 01, the analog front-end circuit 02 and the RRAM integrated circuit 03, the clock source is used for providing square wave clock pulse signals with stable frequency and matched level for operation of the gas sensor group 01, the analog front-end circuit 02 and the RRAM integrated circuit 03, and the clock tree can ensure that the clock edge of the register tends to be minimum, so that good time sequence characteristics are ensured. The controller 044 is used for controlling the circuit operation logic of the gas sensor group 01, the analog front-end circuit 02 and the RRAM memory integrated circuit 03.
In one possible example, the sensor unit of the gas sensor group 01 employs a resistance type gas sensor, which may be a MOS (semiconductor) gas sensor or a contact combustion type gas sensor.
The sensor unit of this embodiment may be a gas sensor as shown in fig. 6 and 7, fig. 6 shows a structural top view of the gas sensor, where the gas sensor is a MEMS MOS with a suspended support film structure formed by a nano or micro processing technology, and includes a silicon substrate 100, a suspended micro-hotplate 110, a cavity 120, a suspended support beam 130, and a metal layer 140, where the suspended micro-hotplate 110 is a device reaction area, the cavity 120 serves as a heat insulation layer, and functions to concentrate heat in the cavity and reduce heat loss, the suspended support beam 130 serves to support the micro-hotplate, and the metal layer 140 serves to electrically connect the micro-hotplate with the outside.
Fig. 7 shows a structural cross-section of a gas sensor, the suspension micro-hotplate 110 includes a micro-hotplate supporting layer 220, a heating electrode 230, a micro-hotplate insulating layer 240, a test electrode 250, and a gas-sensitive film 260, wherein the supporting layer 220 may be any one of SiO2, siNx, a SiO2 composite film or a SiNx composite film, the heating electrode 230 may be one of polysilicon, pt, W, ni, the insulating layer 240 may be SiO2, the test electrode 250 may be any one of Au, cu, or Pt, and the gas-sensitive film 260 may be any one of or a combination of several metal oxides such as SnO2, WO3, in2O3, znO, etc. And the gas sensitive material of the gas sensitive film 260 can regulate and control the gas sensitive characteristic by means of doping, changing the specific surface area, surface modification and the like. An outer support layer 221 of the same material and thickness as the support layer 220 is also deposited on the periphery of the suspended micro-hotplate 110, and an outer insulation layer 241 of the same material and thickness as the support layer 240 is also deposited on the periphery of the suspended micro-hotplate 110.
In this embodiment, the RRAM is a nonvolatile memory, and can be embedded in a metal layer of a CMOS post process, so as to implement high integration with a logic circuit, and the preparation process has good compatibility with the CMOS process, which is beneficial to mass production, and meanwhile has excellent storage performances such as simple structure, high switching ratio, low operating voltage, low power consumption, high read-write speed, and the like, and can implement reversible conversion between a high-resistance state and a low-resistance state under the action of an external electric field, so as to implement storage of data.
Fig. 8 shows a schematic structural diagram of a RRAM, in a possible example, as shown in fig. 8, a RRAM nonvolatile memory 30 includes a bottom electrode 301, a resistive layer 302, and a top electrode 303, where the resistive layer 302 is sandwiched between the bottom electrode 301 and the top electrode 303, and the resistive layer 302 may be made of any material such as TaOx, hfO2, a dopant of Al2O3, tiOx, znO, znO, a metal oxide, and the like. The bottom electrode 301 and the top electrode 303 may be made of any one of titanium nitride TiN, taN, platinum, tungsten, palladium, and gold.
In this embodiment, the RRAM integrated memory cell may have a 1T1R structure, i.e., one transistor is connected to one RRAM, or nTmR, where n is greater than or equal to 2, and m is greater than or equal to 2, i.e., multiple transistors are connected to multiple RRAM cells.
Taking the 1T1R structure as an example of the RRAM memory cell in this embodiment, fig. 9 shows a structural cross-sectional view of the RRAM memory cell, where the RRAM memory cell includes a semiconductor substrate 401, a RRAM cell 30, and a transistor, and the transistor includes a source region 402, a drain region 403, a gate dielectric layer 405, and a gate 408. Referring to fig. 9, the first metal interconnection line 407, the gate electrode 408, and the second metal interconnection line 409 are first metal layers; the third metal interconnection line 412 and the fourth metal interconnection line 413 are second metal layers; the fifth metal interconnect line 415 is a third metal layer; the sixth metal interconnection line 417 is a fourth metal layer; the seventh metal interconnection line 419 is a fifth metal layer. The third metal interconnection line 412 and the source region 402 are connected by the first metal plug 404, the first metal interconnection line 407, and the third metal plug 410; the drain region 403 of the transistor and the RRAM lower electrode are connected by a second metal plug 406, a second metal interconnect 409, a fourth metal plug 411, a fourth metal interconnect 413, a fifth metal plug 414, a fifth metal interconnect 415, a sixth metal plug 416, and a sixth metal interconnect 417; the RRAM upper electrode is connected through a seventh metal plug 418 and a seventh metal interconnection line 419.
Fig. 10 shows an equivalent circuit diagram of the RRAM memory cell of 1T 1R. In fig. 10, BL is a bit line, WL is a word line, SL is a source line, corresponding to fig. 9, the third metal interconnect 412 is a source line SL, the seventh metal interconnect 419 is a bit line BL, and the gate 408 is a word line WL.
Fig. 11 is a schematic structural diagram of an RRAM memory array composed of RRAM memory cells of 1T1R, in which the gates of the transistors of each row of RRAM memory cells are connected together, the upper electrodes of the RRAM memory cells of each column are connected together, and the source terminals of the transistors of each row of RRAM memory cells are connected together, so that the RRAM memory array shown in fig. 11 can be formed.
The above is a gas detection system with integrated sensing and calculation provided in this embodiment, the environmental data to be detected is collected through the gas sensor resistor 01, multiple gas characteristics can be sensed simultaneously, the environmental data to be detected is converted into voltage distribution images through the analog front-end circuit 02, the voltage distribution images are transmitted to the RRAM integrated circuit 03, an analog-digital converter in the traditional gas detection system can be omitted, the system cost is saved, the transmission efficiency is improved, the detection result representing the gas type and concentration is obtained through the RRAM integrated circuit 03 according to the voltage distribution images, the RRAM integrated circuit 03 can also realize the integration of storage and calculation, the problem of a storage wall of a traditional von Neumann computing architecture is solved, and the energy efficiency is remarkably improved.
Fig. 12 shows a gas detection method of a sensing and calculating unit, which is applied to a gas detection system of a sensing and calculating unit according to the above system embodiment, and referring to fig. 12, the method includes the following steps S1201 to S1204:
and S1201, acquiring a resistance value of the gas sensor group when the gas sensor group is in the environment to be detected.
In this embodiment, the resistance value of the sensor unit of the gas sensor group may change after the sensor unit reacts with the gas, and by acquiring the resistance value of the detected gas sensor group 01 in the environment to be detected, different gases can be detected and judged according to different resistance value changes. The acquired resistance values are output in the form of a matrix, and as shown in fig. 3, the sensor units in the gas sensor group 01 are equivalent to variable resistors, and the gas sensor group 01 includes a plurality of resistors, such as R 11、R12、R21、R21 and the like.
And S1202, converting the resistance value into a voltage value, and obtaining a voltage value distribution image based on each sensor unit.
In this embodiment, after the resistance value is converted into the voltage by the resistance-voltage conversion circuit, a voltage distribution image is obtained, and as shown in fig. 3, the voltage values corresponding to R 11、R12、R21、R21 are V 11、V12、V21、V21 respectively. Each pixel point of the voltage distribution image represents a voltage value obtained by converting the resistance value of the corresponding sensor unit, and the color shade of the pixel point represents the size of the voltage value.
S1203, taking the voltage distribution image as an input of the RRAM integrated circuit, and performing matrix operation on the voltage distribution image by the RRAM integrated circuit to obtain a current value.
In this embodiment, each pixel point of the voltage value distribution image corresponds to a voltage value of each sensor unit, and the matrix operation is performed on the voltage value distribution image by the RRAM integrated circuit 03 to obtain a current value, which includes: controlling the writing of each RRAM storage unit through a second driving circuit to obtain a weight matrix of the RRAM storage array; inputting the voltage value of each sensor unit to the RRAM storage array; and obtaining the current value according to the voltage value of each sensor unit and the multiply-accumulate operation of the weight matrix of the RRAM storage array.
Referring to FIG. 4, wherein the RRAM memory array has a plurality of word line ends WL [1], WL [1] … … WL [ m ] corresponding to each column, a plurality of bit line ends BL [1], BL [1] … … BL [ n ] corresponding to each row, and a plurality of source line ends SL [1], SL [1] … … SL [ m ] corresponding to each row. The gating of the RRAM storage unit is controlled by controlling the switch of the transistor through the input voltage of the line ends WL [1], WL [1] … … WL [ m ], the reversible conversion of the RRAM storage unit between a high-resistance state and a low-resistance state can be realized through controlling the voltage of the bit line ends BL [1], BL [1] … … BL [ n ], the storage of the weight value in the gas classification recognition algorithm can be realized, and the corresponding current is output through the source line ends SL [1], SL [1] … … SL [ m ].
The working principle of the RRAM storage array is as follows: the writing of each RRAM storage unit is controlled to change the conductance of each RRAM storage unit so as to realize the storage of the weight value in the gas classification recognition algorithm, namely the storage of the weight value in the gas classification recognition algorithm corresponding to the RRAM conductance value is realized, a weight matrix is obtained, the voltage value corresponding to each pixel point of a voltage distribution image is input to the bit line end of the RRAM storage array, the current value is obtained according to the multiplication and accumulation operation of the voltage value of each sensor unit and the weight matrix of the RRAM storage array, and it can be understood that the current value is output through SL [ n ] according to the multiplication and accumulation operation of the voltage value of each sensor unit and the weight matrix of the RRAM storage array, namely the multiplication and accumulation operation of the voltage value of each sensor unit and the conductance matrix of the RRAM storage array.
And S1204, performing signal post-processing on the current value to obtain a gas detection result.
In this embodiment, the signal post-processing of the current value includes any one or more of quantization, threshold determination, logic determination, and nonlinear activation of the current value of the RRAM memory array.
For example, the quantized row current output by the RRAM storage array is quantized by a quantizer, quantized row current data is used as input of a nonlinear activation module, and a gas detection result is obtained after the nonlinear activation of the quantized row current data by the nonlinear activation module.
The gas detection result may include the type and concentration of the gas, for example, the detection result is that the gas type is VOC (organic volatile gas), and the current environment contains H2S, CO, methane, hydrogen, carbon monoxide, hydrocarbon, oxynitride, and the like, and the concentration of each gas.
The gas detection method with integrated sensing and calculating provided by the embodiment of the application has the same beneficial effects as the method adopted, operated or realized by the stored application program because of the same inventive concept with the gas detection system with integrated sensing and calculating provided by the embodiment of the application.
Fig. 13 illustrates a detection apparatus comprising a housing 1301 and a sense and compute integrated gas detection system 1302 as described in the system embodiments above. The specific structure of the integrated gas detection system 1302 is described in the above embodiments, and in order to avoid repetition, the description is omitted here.
The detection equipment can collect environmental data to be detected through the gas sensor group 01, can sense various gas characteristics simultaneously, converts the environmental data to be detected into voltage distribution images through the analog front-end circuit, and transmits the voltage distribution images to the RRAM integrative circuit 03, so that an analog-to-digital converter in a traditional gas detection system can be omitted, the system cost is saved, the transmission efficiency is improved, the detection result representing the gas type and concentration is obtained through the RRAM integrative circuit 03 according to the voltage distribution images, the RRAM integrative circuit can realize the integration of storage and calculation, the problem of a storage wall of a traditional von Neumann computing architecture is solved, and the energy efficiency is remarkably improved.
It should be noted that:
The algorithms and displays presented herein are not inherently related to any particular computer, virtual system, or other apparatus. Various general-purpose systems may also be used with the teachings herein. The required structure for a construction of such a system is apparent from the description above. In addition, the present application is not directed to any particular programming language. It will be appreciated that the teachings of the present application described herein may be implemented in a variety of programming languages, and the above description of specific languages is provided for disclosure of enablement and best mode of the present application.
In the description provided herein, numerous specific details are set forth. However, it is understood that embodiments of the application may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
Similarly, it should be appreciated that in the above description of exemplary embodiments of the application, various features of the application are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various inventive aspects. However, the disclosed method should not be construed as reflecting the intention that: i.e., the claimed application requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this application.
Those skilled in the art will appreciate that the modules in the apparatus of the embodiments may be adaptively changed and disposed in one or more apparatuses different from the embodiments. The modules or units or components of the embodiments may be combined into one module or unit or component and, furthermore, they may be divided into a plurality of sub-modules or sub-units or sub-components. Any combination of all features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or units of any method or apparatus so disclosed, may be used in combination, except insofar as at least some of such features and/or processes or units are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings), may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise.
Furthermore, those skilled in the art will appreciate that while some embodiments described herein include some features but not others included in other embodiments, combinations of features of different embodiments are meant to be within the scope of the application and form different embodiments. For example, in the following claims, any of the claimed embodiments can be used in any combination.
Various component embodiments of the application may be implemented in hardware, or in software modules running on one or more processors, or in a combination thereof. Those skilled in the art will appreciate that some or all of the functions of some or all of the components in a virtual machine creation system according to embodiments of the application may be implemented in practice using a microprocessor or Digital Signal Processor (DSP). The present application can also be implemented as an apparatus or system program (e.g., a computer program and a computer program product) for performing a portion or all of the methods described herein. Such a program embodying the present application may be stored on a computer readable medium, or may have the form of one or more signals. Such signals may be downloaded from an internet website, provided on a carrier signal, or provided in any other form.
It should be noted that the above-mentioned embodiments illustrate rather than limit the application, and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The application may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The use of the words first, second, third, etc. do not denote any order. These words may be interpreted as names.
The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any person skilled in the art will readily recognize that various changes and substitutions are possible within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A gas detection system of the sense and calculate integration, the system comprising: the gas sensor group, the analog front-end circuit and the RRAM integrated circuit are integrated;
The gas sensor group is used for collecting environmental data to be detected, and comprises a plurality of sensor units, wherein the sensor units comprise sensor units with different structures for detecting the same gas type;
The analog front-end circuit is used for converting the environmental data to be detected into voltage distribution images and transmitting the voltage distribution images to the RRAM storage integrated circuit;
the RRAM integrated circuit is used for obtaining a gas detection result according to the voltage distribution image.
2. The integrated gas detection system of claim 1, wherein,
The RRAM integrated circuit comprises at least one RRAM computing array, and each RRAM computing array comprises a plurality of RRAM computing units.
3. The integrated gas detection system of claim 1, wherein the plurality of sensor units includes sensor units that detect different gas species.
4. The integrated sensor gas detection system of claim 1, wherein the analog front-end circuit comprises: a resistor voltage conversion circuit and an analog signal buffer;
The input end of the resistance voltage conversion circuit is connected with the output end of the gas sensor group, the output end of the resistance voltage conversion circuit is connected with the input end of the analog signal buffer, and the output end of the analog signal buffer is connected with the input end of the RRAM storage and calculation integrated circuit.
5. The integrated sensor-in-gas detection system of claim 1, wherein the RRAM integrated sensor-in-gas circuit further comprises a signal post-processing module;
The input end of the signal post-processing module is connected with the output end of the RRAM storage array, and the signal post-processing module is used for carrying out post-processing on the current value of the RRAM storage array to obtain the gas detection result;
the method for post-processing the result calculated by the RRAM storage array comprises any one or more of quantization, threshold judgment, logic judgment and nonlinear activation of the current value of the RRAM storage array.
6. The integrated sensor-aware gas detection system of claim 1, wherein the gas sensor set comprises a first drive circuit and the RRAM integrated circuit comprises a second drive circuit, the first and second drive circuits being word line and bit line drive circuits;
The first driving circuit is used for driving each sensor unit in the gas sensor group to work, and the second driving circuit is used for driving each RRAM storage unit of the RRAM storage integrated circuit to perform read-write operation.
7. The integrated sensor gas detection system of claim 1, further comprising a peripheral control circuit;
the peripheral control circuit is used for controlling the operation of the gas sensor group, the analog front-end circuit and the RRAM integrated circuit, and comprises a power management module, a clock source, a clock tree and a controller.
8. A method of detecting a gas in a sensor-in-a-vessel, the method being applied to a gas detection system in a sensor-in-a-vessel as claimed in any one of claims 1 to 7, the method comprising:
Acquiring a resistance value of the gas sensor group when the gas sensor group is in an environment to be detected;
Converting the resistance value into a voltage value to obtain a voltage value distribution image based on each sensor unit;
taking the voltage value distribution image as input of an RRAM integrated circuit, and performing matrix operation on the voltage value distribution image through the RRAM integrated circuit to obtain a current value;
And carrying out signal post-processing on the current value to obtain a gas detection result.
9. The integrated gas detection method according to claim 8, wherein each pixel point of the voltage distribution image corresponds to a voltage value of each sensor unit, and performing matrix operation on the voltage distribution image by the RRAM integrated circuit to obtain a current value comprises:
controlling the writing of each RRAM storage unit through a second driving circuit to obtain a weight matrix of the RRAM storage array;
inputting the voltage value of each sensor unit to the RRAM storage array;
And obtaining the current value according to the voltage value of each sensor unit and the multiply-accumulate operation of the weight matrix of the RRAM storage array.
10. A detection apparatus comprising a housing and a sensing and sensing integrated gas detection system according to any one of claims 1 to 7.
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