CN115868016A - 在狭缝阀通道中产生吹扫气体的气体帘幕的方法以及狭缝阀通道 - Google Patents

在狭缝阀通道中产生吹扫气体的气体帘幕的方法以及狭缝阀通道 Download PDF

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CN115868016A
CN115868016A CN202180048355.6A CN202180048355A CN115868016A CN 115868016 A CN115868016 A CN 115868016A CN 202180048355 A CN202180048355 A CN 202180048355A CN 115868016 A CN115868016 A CN 115868016A
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P·莫斯
M·费尔德曼
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Abstract

本发明涉及在用于处理半导体晶片的装置的狭缝阀通道中产生吹扫气体的气体帘幕的方法，其中所述吹扫气体被引导至槽道的两端，该槽道被配置在所述狭缝阀通道的顶部中，并且由可拆卸的盖覆盖，并且在半导体晶片被输送通过所述狭缝阀通道的顶部和底部之间的通孔时，所述吹扫气体以气体帘幕的形式被引导通过所述槽道的底部中的狭缝，到达所述狭缝阀通道的底部。

Description

在狭缝阀通道中产生吹扫气体的气体帘幕的方法以及狭缝阀 通道
本发明提供一种在用于处理半导体晶片的装置的狭缝阀通道中产生吹扫气体的气体帘幕的方法，该装置例如是用于热处理半导体晶片的装置，或者是用于在半导体晶片的上侧沉积层的装置。本发明还提供一种用于此种装置的狭缝阀通道。
现有技术/问题
在US 2010 0 190 343A1中，公开了一种用于处理半导体晶片的装置，其包括典型的模组，特别是处理室、转移室和装载锁定室(load lock)。待处理的半导体晶片以预定的顺序被输送到模组中。各模组通过埠分开。
在KR 10 1 875 305B1中，提出了使用狭缝阀通道作为埠，且当半导体晶片被输送通过该狭缝阀通道时，将吹扫气体引导至该半导体晶片上，以保护该半导体晶片不受颗粒污染。
在US 2015 0 083 330A1中，记载了一种狭缝阀通道，其中吹扫气体被引导从顶部到底部通过孔，以到达被输送通过通道的半导体晶片。
然而，仍存在进一步改进的需求，因为颗粒会在狭缝阀通道中积聚，并且随着时间的推移，狭缝阀通道本身会变成颗粒来源。
本发明的目的是在很大程度上消除当半导体晶片被输送通过狭缝阀通道时被颗粒污染的风险。
本发明的目的是通过一种用于在用于处理半导体晶片的装置的狭缝阀通道中产生吹扫气体的气体帘幕的方法来实现的，其中吹扫气体被引导至槽道的两端，该槽道被配置在狭缝阀通道的顶部中，并且由可拆卸的盖覆盖，并且在半导体晶片被输送通过狭缝阀通道的顶部和底部之间的通孔时，吹扫气体以气体帘幕的形式被引导通过槽道的底部中的狭缝，到达狭缝阀通道的底部。
在移动的方向为从顶部到底部时，气体帘幕优选以直角冲击在半导体晶片的表面上。
根据本发明的另一优选实施方案，槽道底部的狭缝由倾斜的壁侧向地界定，由此导向至狭缝阀通道底部的气体帘幕产生偏转，使得其以不等于90°的角度冲击半导体晶片的表面。优选地，如果半导体晶片从转移室输送到处理室或锁定室，则由于气体帘幕倾斜地冲击在半导体晶片的表面上，位于半导体晶片上的颗粒受到与半导体晶片的移动方向相反的移动推动力。以此方式，颗粒从半导体晶片的表面被清除，并且狭缝阀通道中的颗粒被移动以远离处理室。
本发明还提供一种用于处理半导体晶片的装置的狭缝阀通道，该狭缝阀通道包括顶部、底部以及位于顶部和底部之间的用于沿着输送路径输送半导体晶片通过狭缝阀通道的通孔，该通道包括：
位于顶部的上侧的凹槽；
用于覆盖凹槽的可拆卸的盖；
位于凹槽中的槽道，该槽道横向于输送路径延伸；
在槽道底部的用于通过吹扫气体的狭缝；
在顶部的用于将吹扫气体供给到槽道的两端的孔，由此，在供给气体时，形成取向为从狭缝阀通道的顶部到底部的气体帘幕。
通过将吹扫气体导向槽道的两端并通过槽道中的狭缝导向半导体晶片，形成均匀的气体帘幕，使得不管颗粒在半导体晶片上的任何位置，都可以以相同的效率将它们去除。因为可以通过可拆卸的盖接近槽道，所以因颗粒可积聚在其中且可能由于颗粒成为半导体晶片的污染源的关键区域可容易地接近以进行清洁措施。
该气体帘幕延伸一段距离，该距离大于被输送通过狭缝阀通道的通孔的半导体晶片的直径。根据一个实施方案，该距离的长度以及因此该槽道的长度大于300毫米，特别优选地为320毫米。根据一个实施方案，调节槽道底部的狭缝的宽度，以便实现气体帘幕的期望流速。
根据优选实施方案，槽道底部的狭缝具有侧向地界定该狭缝的垂直的壁，使得气体帘幕以90°的角度冲击在半导体晶片的表面上。
根据另一个优选实施方案，槽道底部的狭缝具有横向地界定所述狭缝并以倾斜方式布置的壁。气体帘幕通过壁被偏转，使得其以不等于90°的角度冲击半导体晶片的表面。
优选地，以预定间隔移除盖，例如在用于处理半导体晶片的装置的维护过程中移除，然后清洗和干燥盖、容纳盖的凹槽和槽道。清洗和干燥可以相对快速地进行，而不需要任何特别的努力。
盖填充凹槽，且可拆卸地固定至狭缝阀通道的顶部的上侧。根据一个实施方案，紧固装置为螺钉，优选为塑料材料或陶瓷的螺钉。根据一个实施方案，还存在密封件，其防止吹扫气体在盖与凹槽之间通过。
狭缝阀通道具有前侧和后侧。根据一个实施方案，前侧是与转移室相邻的一侧，后侧是与处理室或锁定室相邻的一侧。
在狭缝阀通道的顶部，设置有两个孔，用于将吹扫气体供给到槽道的两端。根据一个实施方案，孔位于狭缝阀通道的后侧，在后侧的两个圆形上角的区域中。
狭缝阀通道能够通过门关闭。根据一个实施方案，门关闭狭缝阀通道的前侧上的通孔。
狭缝阀通道是用于处理半导体晶片的装置的一部分。根据一个实施方案，该装置是用于在衬底晶片上沉积外延层的装置，优选地是用于在单晶硅的衬底晶片上沉积硅外延层的装置。根据另一个实施方案，其为用于热处理半导体晶片的装置，优选地为用于热处理单晶硅半导体晶片的装置。
下面将参考附图进一步描述本发明。
附图说明
图1以透视图的方式示出了狭缝阀通道的优选实施方案。
图2示出了根据图1的狭缝阀通道，其中盖被移除。
图3是根据图1的狭缝阀通道的后侧的视图，其具有活性气体帘幕。
图4是根据图1的狭缝阀通道从侧面看的示意图。
图5是根据图1的狭缝阀通道在优选实施方案中的截面图。
图6是根据图1的狭缝阀通道在另一个优选实施方案中的截面图。
所使用的的附图标记列表
1 狭缝阀通道
2 顶部
3 底部
4 通孔
5 后侧
6 盖
7 孔
8 凹槽
9 槽道
10 端部
11 气体帘幕
12 输送路径
13 壁
A模组
B模组
根据本发明的示例性实施方案的详细描述
图1以透视图的方式示出了狭缝阀通道1的优选实施方案。狭缝阀通道1包括顶部2、底部3和位于顶部与底部之间的通孔4。在该视图中，可以看到狭缝阀通道1的后侧5。可拆卸的盖6通过螺钉紧固到顶部的上侧。在狭缝阀通道1的后侧5的两个圆心的上角部的区域中，设置有两个孔7，吹扫气体通过该孔被引导至由盖6覆盖的槽道的两端。箭头表示吹扫气体的流动方向。
图2示出了根据图1的狭缝阀通道1，其中盖6被移除。在顶部2的上侧设置有凹槽8，盖6牢固地装配到该凹槽8中。具有两个端部10的槽道9结合在凹槽中，该槽道几乎延伸跨过通孔4的宽度，并且在底部处向狭缝开口(未示出)。
图3是根据图1的狭缝阀通道的后侧3的视图，其具有吹扫气体的活性气体帘幕11。
图4是根据图1的狭缝阀通道从侧面看的示意图，其中狭缝阀通道1的后侧5与用于处理半导体晶片的装置的模组A相邻，并且狭缝阀通道1的前侧与装置的模组B相邻。箭头表示用于关闭通孔4的门(未示出)的运动方向。例如，模组A是处理室或装载室，模组B是转移室。
图5是优选实施方案中的狭缝阀通道的截面图，其中槽道底部的狭缝由垂直的壁13界定。气体帘幕以90°的角度冲击在半导体晶片的表面上。
图6是另一优选实施方案中的狭缝阀通道的截面图，其中槽道底部的狭缝由倾斜的壁13界定。由于该壁，气体帘幕在箭头所指的方向上偏转。
示例性实施方案的上述描述应当被理解为是示例性的。由此作出的公开一方面使得本领域技术人员能够理解本发明及其相关优点，另一方面还包括对所描述的结构和方法的变化和修改，这些变化和修改在本领域技术人员的理解内是显而易见的。因此，所有这些变化和修改以及等同物都被权利要求的保护范围所覆盖。

Claims (7)

1.在用于处理半导体晶片的装置的狭缝阀通道中产生吹扫气体的气体帘幕的方法，其中
所述吹扫气体被引导至槽道的两端，该槽道被配置在所述狭缝阀通道的顶部中，并且由可拆卸的盖覆盖，并且在半导体晶片被输送通过所述狭缝阀通道的顶部和底部之间的通孔时，所述吹扫气体以气体帘幕的形式被引导通过所述槽道的底部中的狭缝，到达所述狭缝阀通道的底部。
2.根据权利要求1所述的方法，其中在产生所述气体帘幕之前或之后移除所述盖，并且清洁所述盖、容纳所述盖的凹槽以及所述槽道。
3.根据权利要求1或2所述的方法，其中被引导至所述狭缝阀通道的底部的气体帘幕以90°的角度冲击所述半导体晶片的表面。
4.根据权利要求1或2所述的方法，其中所述槽道的底部中的狭缝由倾斜的壁侧向地界定，由此导向至所述狭缝阀通道的底部的所述气体帘幕被偏转，使得其以不等于90°的角度冲击所述半导体晶片的表面。
5.用于处理半导体晶片的装置的狭缝阀通道，其包括顶部、底部以及位于所述顶部和所述底部之间的通孔，所述通孔用于沿着输送路径输送所述半导体晶片通过所述狭缝阀通道，包括：
位于所述顶部的上侧上的凹槽；
用于覆盖所述凹槽的可拆卸的盖；
位于所述凹槽中的槽道，该槽道横向于所述输送路径延伸；
在所述槽道的底部中的狭缝，用于吹扫气体的通过；
位于所述顶部中的孔，用于将所述吹扫气体供给到所述槽道的两端；
由此，在供应所述吹扫气体时，形成从所述狭缝阀通道的顶部至底部取向的气体帘幕。
6.根据权利要求5所述的狭缝阀通道，其特征在于所述垂直的壁侧向界定所述狭缝。
7.根据权利要求5所述的狭缝阀通道，其特征在于所述倾斜的壁侧向界定所述狭缝。
CN202180048355.6A 2020-07-06 2021-06-18 在狭缝阀通道中产生吹扫气体的气体帘幕的方法以及狭缝阀通道 Pending CN115868016A (zh)

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