CN115867056A

CN115867056A - Organic solar cell module and preparation method thereof

Info

Publication number: CN115867056A
Application number: CN202211196153.9A
Authority: CN
Inventors: 裘伟明; 杨曦
Original assignee: Guangzhou Zhuoguang Technology Co ltd
Current assignee: Guangzhou Zhuoguang Technology Co ltd
Priority date: 2022-09-29
Filing date: 2022-09-29
Publication date: 2023-03-28

Abstract

The invention relates to an organic solar cell module and a preparation method thereof. In the organic solar cell module, a conductive layer (1A, 1B) is additionally deposited on the first electrode layer, and a connecting channel (P2) and a blocking channel (P3) are etched on the conductive layer. Compared with the prior art, the invention has the following remarkable advantages: when the laser etches the connecting channel (P2) and the isolating channel (P3), the etching fault tolerance rate is improved, the first electrode layer is protected, all layers are completely etched, and the performance of the device is improved.

Description

Organic solar cell module and preparation method thereof

Technical Field

The invention belongs to the field of manufacturing of organic thin-film solar cells, and particularly relates to an organic solar cell module and a preparation method thereof.

Background

In recent years, pollution-free and renewable solar energy has become a hot spot for scientific research and commercial application. Among them, a solar cell based on the photovoltaic effect is particularly preferred because it can convert solar energy into electric energy safely and efficiently.

The solar energy technology is developed to the present, the first generation solar cell represented by monocrystalline silicon and polycrystalline silicon is relatively mature, but the preparation process is complex; the second generation inorganic thin film solar cell represented by gallium arsenide and copper indium gallium selenide is high in energy conversion efficiency, but is expensive, and potential safety hazards and pollution problems caused by heavy metals are difficult to avoid. At present, the third generation of new solar cell represented by organic semiconductor material is becoming a research focus. Compared with the traditional solar cell technology, the organic solar cell has more excellent photoelectric conversion performance under the conditions of weak light, indoor light and the like, and has wider application scenes. In addition, the organic solar cell has the advantages of flexibility, environmental protection, roll-to-roll printing and the like, and is one of important development and research directions of new energy technology.

In practical applications, researchers often need to prepare organic solar cell modules with series-connected sub-cells in order to reduce energy loss caused by the resistance of the transparent electrode of the organic solar cell and to obtain the required output voltage. At present, the construction of the series structure between the sub-batteries is mainly realized by patterning each functional layer by a laser etching method.

The literature: peter Kubis, ning Li, tobias Stubhan. Patterning of organic photovoltaic modules by ultra fast laser prog. Photovolt: res. Appl.2015; 23-238-246. The laser etching area P1 separates the first electrode, divides the sub-cell areas arranged in parallel, and realizes the electrical connection between the sub-cells through the second electrode at the laser etching area P2, while the laser etching area P3 separates the second electrode, thereby completing the series connection between the sub-cells. However, due to etching errors caused by etching precision, fluctuation of laser energy and other reasons, when the P2 and P3 processes are performed, the problem that the P2 etching is too shallow and the first electrode cannot be exposed, or the etching at the P2 and P3 is too deep and the first electrode layer is damaged easily occurs, so that the photoelectric conversion efficiency of the device is affected, and even the device does not work. In particular, in the case of using a conductive polymer as the first electrode material, since the electrode material is relatively similar to the organic functional layer material, it is easily damaged at the time of the P2 and P3 laser etching processes. Although this technical drawback can be improved to some extent by using a high-precision ultrafast laser (picosecond or femtosecond laser), it is expensive and increases the manufacturing cost. Therefore, how to solve the technical problem is very important to improve the efficiency of the organic solar cell module and the yield in the preparation process.

Disclosure of Invention

The invention aims to provide an organic solar cell module and a preparation method thereof, which are used for solving the problem of poor electrical series connection between sub-cells caused by inaccuracy of a laser etching process in the existing preparation process of the organic solar cell module, so that the photoelectric conversion efficiency and the yield of the organic solar cell module are improved.

In order to realize the purpose of the invention, the provided solution is as follows:

an organic solar cell module comprises a substrate (100) and a plurality of solar cells, wherein the solar cells are positioned on the substrate (100); the solar cell unit comprises a first electrode layer (101), a photovoltaic layer (102) and a second electrode layer (103) from bottom to top in sequence:

at least one insulation channel (P1) is etched on the first electrode layer (101), the insulation channel (P1) extends to the substrate, the first electrode layer is divided into a plurality of sub-electrodes which are insulated from each other, and the insulation channel (P1) is filled with the same material as the photovoltaic layer (102);

a conductive layer (1A, 1B) is provided on each sub-electron of the first electrode layer (101);

at least one connecting channel (P2) is etched on the photovoltaic layer (102), the connecting channel (P2) penetrates through the photovoltaic layer (102) to the conductive layer (1A, 1B) area, and the connecting channel (P2) is filled with the same material as the second electrode layer (103) so that the adjacent sub-electrodes are connected in series;

etching at least one isolation channel (P3) on the second electrode layer (103), wherein the isolation channel (P3) penetrates through the second electrode layer (103) and the photovoltaic layer (102) to the conductive layer (1A, 1B) area;

the connecting channel (P2) is located between the insulating channel (P1) and the separating channel (P3).

Further, the conductive layers (1A, 1B) do not overlap or partially overlap the insulation trench (P1).

In one embodiment, a substrate having excellent transparency, surface smoothness, ease of handling, and water resistance may be used as the substrate. Specifically, a glass substrate, a thin-film glass substrate, or a transparent plastic substrate may be used. The plastic substrate may include a film in a single layer or multi-layer form, such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyetheretherketone (PEEK), polyimide (PI), and the like, but is not limited thereto. Thus, the substrate may be rigid or flexible.

The first electrode layer may be made of a transparent or semitransparent conductive material, but is not limited thereto. The conductive material may be a conductive metal oxide such as indium oxide, zinc oxide, tin oxide, indium Tin Oxide (ITO), fluorine-doped tin oxide (FTO), gallium-doped zinc oxide (GZO), aluminum-doped zinc oxide (AZO), indium Zinc Oxide (IZO), and Indium Gallium Zinc Oxide (IGZO); conductive polymers such as poly (3, 4-ethylenedioxythiophene)/poly (4-styrenesulfonate) (PEDOT/PSS), polypyrrole, polyaniline, and the like; conductive carbon materials such as graphene, carbon nanotubes, and the like; nano conductive materials such as metal nanoparticles or nanowires, etc.; an ultra-thin metal layer capable of maintaining a certain light transmittance, and a composite laminate comprising the same, for example, a metal layer formed of a metal such as gold, platinum, silver, copper, cobalt, nickel, indium, or aluminum, or a film laminate comprising an alloy of any of these metals.

Further, the thickness of the first electrode layer is preferably 50 to 500nm.

The conductive layer may be made by a selective deposition process.

In one embodiment, the conductive layer material is selected from a metal, a carbon material, or a carbon/polymer composite. In a specific embodiment, the conductive layer material may be a carbon material layer having a structure made of, for example, aluminum, gold, platinum, silver, copper, indium, bismuth, lead, tin, zinc, iron, cobalt, nickel, titanium, zirconium, molybdenum, tungsten, chromium, or tantalum, or an alloy containing any of the above metals, or a carbon nanotube, graphene, or the like, or a composite material layer in which particles and fibers of the above metal material or carbon material are dispersed in a polymer material (a metal/polymer composite layer or a carbon/polymer composite layer). Preferably, the conductive layer material is selected from silver or silver nanomaterial, copper or copper nanomaterial, aluminum or aluminum nanomaterial.

In one embodiment, the width of the conductive layer is selected from 200-500um; the width of the conductive layer is smaller than that of the first electrode layer of the solar cell unit.

Further, the thickness is selected from 50-500nm;

furthermore, the distance between two adjacent conductive layers is 0.2-2cm.

Under the same laser etching condition, the power required for etching the conducting layer material is greater than that required for etching the first electrode layer material, so that the first electrode layer can be effectively prevented from being damaged when the connecting channel and the isolating channel are etched by laser etching.

Obtaining an insulation channel on the first electrode layer or the conducting layer through laser etching; preferably, the distance between two adjacent insulation channels is equal. Wherein the width of the isolation channel may be between 10-200um and separates the first electrode layer into sub-electrodes having a width of 0.5-2 cm.

In one embodiment, the isolation trench is located at an edge of the conductive layer.

In an embodiment, the photovoltaic layer may be a single layer selected from a photoactive layer; the photovoltaic layer may also be a plurality of layers, preferably three layers, and the device structure shown in fig. 2 includes a first charge transport layer, a photoactive layer, and a second charge transport layer in sequence from the first electrode layer.

When the photovoltaic layer is a single layer, the connecting channel is filled with an optical active layer material; when the photovoltaic layer is a multilayer, the connecting and communicating material is the first charge layer material.

The photoactive layer includes an electron donor material and an electron acceptor material. In photoactive layers, photons are absorbed by an electron donor material or an acceptor material to form strongly bound electron-hole pairs (excitons), and in order to efficiently convert light energy into electrical energy, the excitons must diffuse to the donor/acceptor material interface prior to recombination and achieve separation of the excitons through charge transfer, forming free electrons and holes, which are then collected by the cathode and anode, respectively, to achieve photoelectric conversion.

In one embodiment, the mass ratio of electron donor material to electron acceptor material in the photoactive layer can be 1. Further, the mass ratio of electron donor material to electron donor material may be 1; specifically, the mass ratio of the electron donor material to the electron donor material is 1:1.2-1:1.5.

in one embodiment, the photoactive layer comprises one donor material and one acceptor material; preferably, the donor material is selected from polymeric donor materials; the acceptor material is selected from small molecule organic materials.

In another embodiment, the photoactive material is selected from one donor material and two acceptor materials; preferably, the acceptor material is selected from a non-fullerene acceptor material and a fullerene acceptor material.

In one embodiment, the electron donor material may be polythiophene and its derivatives, polypyrrole and its derivatives, pyrazoline derivatives, arylamine derivatives, triphenyldiamine derivatives, oligothiophene and its derivatives, polyvinylcarbazole and its derivatives, polysilane and its derivatives, polysiloxane derivatives having arylamine on aromatic amine, polyaniline and its derivatives which may use side chain or main chain, phthalocyanine derivatives, porphyrin and its derivatives, polyphenylenevinylene and its derivatives, polythienylvinylene and its derivatives, and the like. More specifically, the donor material may be a polythiophene material system, such as P3AT, P3HT, P3OT, P3DDT, etc.; fluorene-containing polymeric material systems, such as PF8BT, and the like; the novel narrow-band-gap polymer material system with the structure is formed by copolymerizing benzothiadiazoles (BT, BBT), quinoxalines (QU, PQ), pyrazines (TP, PQ) and electron-rich groups (such as thiophene derivatives), such as PCDTBT, PCPDTBT, PFO-DBT, PTQ10, PTB7, PM6, J52 and the like. These donor materials may be used in combination, or a mixture or compound of any of these materials with another material may be used. The electron acceptor may be fullerene and its derivatives, such as C60 or C70 or its derivatives, and may be selected from PC ₆₁ BM、PC ₇₁ BM; or non-fullerene small molecule receptors such as BO-4Cl and derivatives thereof, Y6 and derivatives thereof, BTA and derivatives thereof, EH-IDTBR, TTPBT-IC, IEICO-4F, etc.; or a non-fullerene polymer acceptor material such as N2200 or the like. Like the donor materials, these acceptor materials may also be used in combination.

The first charge transport layer and the second charge transport layer are used in pairs, i.e. if the first charge transport layer is usedThe charge transport layer is an electron transport layer, and the second charge transport layer is a hole transport layer; conversely, if the first charge transport layer is a hole transport layer, then the second charge transport layer is an electron transport layer. The charge transport layer functions to efficiently selectively transport electrons and holes separated from the photoactive layer to the corresponding electrodes. Wherein the electron transport layer can efficiently transport electrons to the cathode, and the material can be metal oxide with low work function, fullerene derivative, polymer or compound thereof, such as titanium oxide (TiO) _x ) Zinc oxide (ZnO), tin oxide (SnO) ₂ ) Polyethenoxyethyleneimine (PEIE), polyetherimide (PEI), PFN-Br and ZnO-PEIE complexes, PEI-Zn, znO-PEI complexes, and the like, but are not limited thereto. The hole transport layer can efficiently transport holes to the anode, and the material thereof can be a high work function metal oxide such as molybdenum oxide (MoO) _x ) Vanadium oxide (V) ₂ O ₅ ) Nickel oxide (NiO), tungsten oxide (WO) _x ) Or polymer materials such as PEDOT, PSS, and polyaniline derivatives, but not limited thereto.

The thickness of the photovoltaic layer is preferably 100-500nm; more preferably 150-200nm.

And obtaining a connecting channel on the photovoltaic layer through laser etching, wherein the connecting channel is positioned on the upper part of the conductive layer region and penetrates through the photovoltaic layer to extend to the conductive layer region.

The width of the connecting channel is 40-200 um; preferably 50 to 100um.

The function of the connecting channel is as follows: and filling a second electrode layer material to connect the cathodes and the anodes of two adjacent sub-batteries to form a series circuit.

In an embodiment, the connecting channel is separated from the insulating channel by a first distance d1, d1 being selected from 20 to 100um, preferably 50 to 70um.

The reason why the connection channel is located on the upper portion of the conductive layer region is that: due to laser energy fluctuation or low precision, uneven film thickness and other reasons, the first electrode is damaged or the functional layer is not completely etched in the laser etching process engineering, so that the contact resistance at the P2 position in the subsequent preparation process is increased, and the photoelectric conversion efficiency of the organic solar cell module is influenced. According to the invention, the conductive layer is additionally deposited in the laser etching area, and the etching depth can be limited in the conductive layer by controlling the laser energy, so that the functional layer is ensured to be completely etched, the first electrode layer is not damaged, and the performance of the device is favorably improved.

The second electrode layer may be a translucent or opaque conductive material. The conductive material may be a metal such as gold, platinum, silver, copper, cobalt, nickel, indium or aluminum, or an alloy thereof; conductive metal oxides such as indium oxide, zinc oxide, tin oxide, indium Tin Oxide (ITO), fluorine-doped tin oxide (FTO), gallium-doped zinc oxide (GZO), aluminum-doped zinc oxide (AZO), indium Zinc Oxide (IZO), and Indium Gallium Zinc Oxide (IGZO); conductive polymers such as poly (3, 4-ethylenedioxythiophene)/poly (4-styrenesulfonate) (PEDOT/PSS), polypyrrole, polyaniline, and the like; conductive carbon materials such as graphene, carbon nanotubes, and the like; nano conductive materials such as metal nanoparticles or nanowires, etc.; or a composite of the above conductive materials, and the like.

And performing laser etching on the second conducting layer to obtain an isolation channel, wherein the isolation channel is positioned on the upper part of the conducting layer area, and the isolation channel penetrates through the second conducting layer and the photovoltaic layer and extends to the conducting layer area.

And separating the second electrode layer into a plurality of sub-cells by the isolation channels.

The width of the partition channel is 20-200 um; preferably 40 to 100um.

The partition channel is spaced from the connecting channel by a second distance d2, d2 being selected from 20 to 100um, preferably 50 to 70um.

The reason why the blocking trench is located at the upper portion of the conductive layer region is that: in the conventional method, that is, in the case of not adding a conductive layer, especially when the second conductive layer is a metal or a metal oxide, since the laser energy used for etching the second electrode layer is generally higher than the laser energy required for etching the functional layer, a situation often occurs in which the first electrode portion at the channel-blocking portion is even completely destroyed. On the other hand, if the energy of laser etching at the partition trench is reduced, it is often the case that the second electrode is not completely partitioned. After the conducting layer is deposited on the first electrode at the position of the channel, the first electrode can be effectively protected, and the normal work of the device is ensured.

The invention also provides a preparation method of the organic solar cell module, which comprises the following steps:

step 1, forming a first electrode layer (101) on a substrate (100);

step 2, depositing a conductive layer (1A, 1B) on the first electrode layer (101);

step 3, obtaining an insulation channel (P1) on the first electrode layer (101) or the conducting layers (1A, 1B) through a laser etching method, wherein the insulation channel (P1) extends to the substrate (100);

step 4, depositing a photovoltaic layer (102) on the first electrode layer (101), the conducting layers (1A, 1B) and the insulation channel (P1);

step 5, obtaining a connecting channel (P2) on the photovoltaic layer (102) through a laser etching method, wherein the connecting channel (P2) penetrates through the photovoltaic layer (102) and extends to the conducting layers (1A, 1B);

step 6, depositing a second electrode layer (103) on the photovoltaic layer (102) and the connecting channel (P2);

and 7, obtaining an isolation channel (P3) on the second conductive layer (103) through a laser etching method, wherein the isolation channel (P3) is adjacent to the connecting channel (P2) and penetrates through the second conductive layer (103) and the photovoltaic layer (102) to extend to the conductive layers (1A, 1B).

The laser used in the invention can be nanosecond, picosecond or femtosecond laser with infrared or visible light wave band. Preferably, the laser used is a nanosecond laser to reduce equipment cost.

In step 1, the first electrode may be prepared on the substrate by sputtering, electron beam deposition, thermal deposition, spin coating, inkjet printing, spray coating, blade coating, slit coating, and the like, but is not limited thereto.

In step 2, the conductive layer may be prepared on the substrate by ink-jet printing, screen printing, or vacuum evaporation, but is not limited to the above method.

In step 4, the preparation method of the photovoltaic layer may be completed by spin coating, inkjet printing, slit coating, blade coating, vacuum evaporation, and the like, but is not limited to the above method.

In step 6, the second electrode layer may be prepared by sputtering, e-beam deposition, vacuum evaporation, spin coating, inkjet printing, spray coating, blade coating, slit coating, and the like, but is not limited thereto.

The reason step 2 precedes step 3 is that: if an insulation channel is etched on the first electrode layer firstly, then a conducting layer is deposited on the edge of the insulation channel to be used as a protective layer for the first electrode when the channel is connected and isolated, certain deviation is easy to occur in positioning when the conducting layer is deposited, so that the conducting material is deposited in the groove of the insulation channel to cause the phenomenon that the first electrode layer is incompletely separated, and the device does not work. In addition, if the conductive layer is deposited away from P1, the dead zone of the organic solar cell module is increased, the effective area of photoelectric conversion of the organic solar cell module is reduced, and the photoelectric conversion efficiency is reduced.

Compared with the prior art, the invention has the following remarkable advantages:

1. according to the invention, the conducting layer is additionally deposited on the first electrode layer, when the laser is used for etching the connecting channel P2, the conducting layer is positioned on the conducting layer, and the etching depth is limited on the conducting layer by controlling the laser energy, so that the functional layer is ensured to be completely etched, the first electrode layer is not damaged, and the performance of the device is favorably improved;

2. when the laser is used for etching the isolation channel P3, the first electrode can be effectively protected due to the conductive layer, so that the situation that the first electrode part is even completely damaged or the second electrode is not completely isolated when the channel is etched and isolated is avoided;

3. according to the preparation method of the organic solar cell module, the conducting layer is prepared first, then laser etching is carried out to obtain the insulating channel, the conducting layer material can be prevented from entering the insulating region, and therefore two adjacent first electrode layers are not insulated, short circuit is caused, and meanwhile the conducting layer can also play a role in positioning when the insulating region is subjected to laser etching.

Drawings

Fig. 1A is a schematic diagram of step 1 in the method for manufacturing an organic solar cell module according to the present invention.

Fig. 1B is a schematic diagram of step 2 in the method for manufacturing an organic solar cell module according to the present invention.

Fig. 1C is a schematic diagram of step 3 in the method for manufacturing an organic solar cell module according to the present invention.

Fig. 1D is a schematic diagram of step 4 in the method for manufacturing an organic solar cell module according to the present invention.

Fig. 1E is a schematic diagram of step 5 in the method for manufacturing an organic solar cell module according to the present invention.

Fig. 1F is a schematic diagram of step 6 in the method for manufacturing an organic solar cell module according to the present invention.

Fig. 1G is a schematic diagram of step 7 in the method for manufacturing an organic solar cell module according to the present invention.

Fig. 2 is a schematic structural view of an organic solar cell unit provided by the present invention.

Fig. 3 is a schematic structural view of organic solar cell modules according to comparative examples 1, 2, and 3 of the present invention.

Fig. 4 is a schematic structural view of an organic solar cell module according to comparative example 4 of the present invention.

Fig. 5 is an optical micrograph of the organic photovoltaic module P1 or P2 of comparative example 1.

Fig. 6 is an optical micrograph of an object at an organic photovoltaic module P3 of comparative example 2.

Fig. 7 is an optical micrograph of the organic photovoltaic module P1 or P2 of comparative example 3.

Fig. 8 is an optical micrograph of an object at the organic photovoltaic module P3 of comparative example 4.

Wherein 100 is a substrate, 101 is a first electrode layer, 102 is a photovoltaic layer, 103 is a second electrode layer, 104 is a first charge transport layer, 105 is an optical active layer, 106 is a second charge transport layer, P1 is an insulating channel, P2 is a connecting channel, P3 is an isolating channel, 1A is a conductive layer, and 1B is a conductive layer.

Detailed Description

In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention.

Example 1

The preparation of the organic solar cell module comprises the following steps:

step 1, forming a first electrode layer 101 on a glass substrate in a sputtering mode, wherein the material is ITO and the thickness is 150nm.

And 2, printing the conductive paste containing the silver nanoparticles in an ink-jet printing mode, and drying to form a plurality of conductive layers with the thickness of about 100nm, wherein the width of each conductive layer is 300um, and the distance between the conductive layers is 0.5cm.

And 3, positioning the edge of the conducting layer by using a green laser etching system with the wavelength of 532nm and the power of 20W, and etching an insulating channel P1, wherein the laser parameters for etching are 28mA, the etching speed is 200mm/s, the Q frequency is 80kHz, the Q release is 5us, and the width of the finally obtained P1 is about 30 nm.

And 4, coating PEI-Zn on the first electrode 101 and the conductive layer in a blade coating mode to form a first charge transport layer 104.PEI-Zn precursor solutions were formulated as per the reference (Nature Communications,2020, 11, 4508) and annealed at 150 ℃ for 10 minutes after coating to give films of about 40nm thickness. The photoactive layer 105 was then drawn down on the first charge transport layer 104, where the polymer donor PM6 was mixed with the small molecule acceptor BO-4Cl at 1.2 and dissolved in toluene to a total concentration of 10mg/ml. After the coating is completed, the film is annealed at 100 ℃ for 10 minutes to obtain the photoactive layer 105 of about 100 nm. On top of this, vacuum evaporation (evaporation atmosphere 1 x 10) ^-5 Pa, evaporation rate of

) Method of depositing 10nm MoO ₃ As the second charge transport layer 106.

And 5, positioning by the same laser etching system and etching the connecting channel P2 in the area above the conductive layer, wherein the interval between the connecting channel P2 and the insulating channel P1 is about 50um. The laser parameters for etching are 23.4mA, the etching speed is 100mm/s, the Q frequency is 80kHz, the Q release is 5us, and the width of the P2 obtained by twice scribing is about 80 nm. A connecting channel extends through the second charge transport layer, the photoactive layer, the first charge transport layer, to the conductive layer.

Step 6, vacuum evaporation (evaporation environment is 1 × 10) ^-5 Pa, evaporation rate of

) The method of (3) deposits 120nm metallic silver as the second electrode layer 103.

And 7, positioning by the same laser system and etching and isolating a channel P3 in the area above the conductive layer, wherein the interval between P3 and P2 is 50um. The laser parameters for etching are current 24mA, etching speed is 120mm/s, Q frequency is 80kHz, Q release is 5us, and the width of the obtained P3 is about 40nm. The blocking channel penetrates through the second electrode layer, the second charge transport layer, the photoactive layer, the first charge transport layer to the conductive layer.

The size prepared by this example was 16cm ² The organic solar photovoltaic module is standard 100mW/cm ² Photoelectric conversion efficiency in the am1.5g solar simulator was 12.8%.

Example 2

The preparation of the organic solar cell module comprises the following steps:

step 1, coating 200nm high-conductivity PEDOT on a flexible PET substrate: first electrode layer 101 of PSS (PH 1000, heraeus).

Step 2, the same method as used in step 2 of example 1, but using a conductive ink containing copper nanoparticles.

Step 3, using the same green laser etching system to position the edge of the conductive layer and etch the insulating channel P1 as in embodiment 1, wherein the parameters used are different, specifically: wherein the parameters of the laser for etching are current 22.5mA, the etching speed is 100mm/s, the Q frequency is 80kHz, the Q release is 0.5us, and the width of the finally obtained P1 is about 40nm.

Step 4, the first charge transport layer 104 was prepared using the same method and material as in example 1. The photoactive layer 105 was drawn over the first charge transport layer 104, using materials which were different: the polymer donor PTQ10, the non-fullerene acceptor BO-4Cl and the fullerene acceptor PC60BM were mixed in toluene in a 1.2. After coating, the film is annealed at 100 ℃ for 10 minutes to obtain a photoactive layer of about 120 nm. A second charge transport layer 106 was then drawn over the active layer 105, the material being PEDOT: PSS (Clevios AI 4083, heraeus), wherein 0.1wt% of additives are added to reduce the surface tension of the capstone-30 (Dupont) to improve its wettability for coating on the surface of the photoactive layer. After coating was complete, the PEDOT: the PSS layer was annealed at 110 ℃ for 10 minutes to a final thickness of 40nm.

And 5, positioning by the same laser etching system and etching a connecting channel P2 in the area above the conducting layer, wherein the interval between the P2 and the P1 is about 50um. The laser parameters for etching are current 22mA, etching speed is 100mm/s, Q frequency is 80kHz, Q release is 0.2us, and the width of the connecting channel is about 80nm through twice scribing. A connecting channel extends through the second charge transport layer, the photoactive layer, the first charge transport layer, to the electrically conductive layer.

And 6, blade coating silver nanowire ink (with the diameter of 30nm and the length of 30-50um, XFINAN) to obtain the silver nanowire second electrode layer 103 with the diameter of 150nm.

And 7, positioning by the same laser system and etching an isolation channel in the area above the conductive layer, wherein the interval between the isolation channel and the connection channel is 50um. The laser parameters for etching are 23mA current, the etching speed is 100mm/s, the Q frequency is 80kHz, the Q release is 5us, and the width of the obtained P3 is about 40nm. The blocking channel penetrates through the second electrode layer, the second charge transport layer, the photoactive layer, the first charge transport layer to the conductive layer.

The size prepared by this example was 4cm ² The photoelectric conversion efficiency of the organic solar photovoltaic module is 18.1% under the irradiation of an LED lamp with the color temperature of 3000K and the light intensity of 1000 Lux.

Example 3:

the preparation of the organic solar cell module comprises the following steps:

step 1, coating 200nm high-conductivity PEDOT on a flexible PET substrate: a first electrode layer 101 of PSS (PH 1000, heraeus).

And 2, performing vacuum evaporation on 100nm metal aluminum serving as a conducting layer through a mask plate, wherein the single width of the conducting layer is 300um, and the interval is 0.5cm.

And 3, positioning the edge of the conductive layer by using a green laser etching system with the wavelength of 532nm and the power of 20W, and etching an insulating channel P1, wherein the parameters of the laser for etching are 23.4mA, the etching speed is 100mm/s, the Q frequency is 80kHz, the Q release is 5us, and the width of the finally obtained P1 is about 40nm.

And 4, coating PEI-Zn on the first electrode layer 101 and the conductive layer in a blade coating mode to serve as the first charge transport layer 104.PEI-Zn precursor solutions were formulated according to the reference (Nature Communications,2020, 11, 4508) and annealed at 150 ℃ for 10 minutes after coating to give films of approximately 40nm thickness. The photoactive layer 105 was then drawn down over the first charge transport layer 104, where the polymer donor PTQ10, the non-fullerene acceptor BO-4Cl, and the fullerene acceptor PC60BM were mixed in 1.2. After coating, the film was annealed at 100 ℃ for 10 minutes to obtain a photoactive layer 105 of about 120 nm. On top of this, vacuum evaporation (evaporation atmosphere 1 x 10) ^-5 Pa, evaporation rate of

) Method of depositing 10nm MoO ₃ As the second charge transport layer 106.

And 5, etching method and width of the connecting channel P2 are the same as those of the embodiment.

And 6, performing vacuum evaporation on the second charge transport layer 106 (the evaporation environment is 1 × 10) ^-5 Pa, evaporation rate of

) The method of (3) deposits 120nm metallic silver as the second electrode layer.

And 7, positioning by the same laser system and etching an isolation channel P3 in the area above the conductive layer, wherein the interval between the isolation channel and the connection channel is 50um. The laser parameters for etching are current 24mA, etching speed is 100mm/s, Q frequency is 80kHz, Q release is 5us, and the width of the obtained P3 is about 40nm. The blocking channel penetrates through the second electrode layer, the second charge transport layer, the photoactive layer, the first charge transport layer to the conductive layer.

The size prepared by this example was 4cm ² The photoelectric conversion efficiency of the organic solar photovoltaic module is 20.5% under the irradiation of an LED lamp with the color temperature of 3000K and the light intensity of 1000 Lux.

Comparative example 1:

preparation of organic solar cell module the organic photovoltaic module was fabricated in the same manner as in example 1, except that no conductive layer was deposited on the first electrode layer 101, and the module structure is as shown in fig. 3.

As shown in fig. 5, when the etching conditions for connecting the trenches and the partition trenches were the same as those of example, it was observed that ITO was scratched and holes were locally generated, which resulted in higher series resistance of comparative example 1 than that of example 1.

The comparative example was prepared to have a size of 16cm ² The organic solar photovoltaic module is standard at 100mW/cm ² The photoelectric conversion efficiency in the am1.5g solar simulator was 10.2%.

Comparative example 2:

the organic solar cell module is prepared in the same manner as in example 1 except that no conductive layer is deposited on the first electrode layer 101, and when the laser etching is performed to cut off the channel in step 7, the selected laser parameters are 23.5mA, the etching speed is 120mm/s, the Q frequency is 80khz, and the Q release is 5us, and the module structure is shown in fig. 3.

As shown in fig. 6, when the current used in laser etching at P3 is reduced, incomplete etching may occur, and particularly, there may be a case where the silver electrode cannot be completely separated at P3, resulting in the device not being operated.

Comparative example 3:

preparing an organic solar cell module:

preparation steps an organic solar cell module was fabricated in the same manner as in example 2, except that no conductive layer was deposited on the first electrode layer 101, and the module structure was as shown in fig. 3.

As shown in fig. 7, since the first electrode layer of the present example and the photovoltaic layer (including the first charge transport layer 104, the photoactive layer 105, and the second charge transport layer 106) are both organic, when the same laser etching conditions as those of example 2 are used, the electrode at the connection channel P2 is completely etched, and the series connection between the sub-cells at P2 is poor, so that the device does not work.

Similarly, because the first electrode and the photovoltaic layer are both organic matter, the depth of laser etching is difficult to be controlled exactly at the interface of the first electrode and the functional layer by adjusting etching parameters, which affects the repeatability and yield of device preparation.

Comparative example 4:

preparing an organic solar cell module:

the organic solar cell module was fabricated in the same manner as in example 3, except that the blocking trench P3 was located in the conductive layer region, and the device structure was as shown in fig. 4.

As shown in fig. 8, the device did not operate when illuminated by an LED lamp with a color temperature of 3000K and a light intensity of 1000 Lux. This is because when P3 is etched under the same laser etching conditions as those in example 3, the first electrode made of an organic material is seriously damaged or even completely removed during the etching process due to the large energy required for etching the silver electrode, so that the sub-cells cannot be connected in series, and the device does not work.

Comparative example 5:

preparing an organic solar cell module:

the preparation steps are the same as those in embodiment 1 except that the insulating trench P1 is etched on the first electrode layer 101, and then a conductive layer is deposited on the edge of P1 to serve as a protective layer for the first electrode during etching of P2 to P3. The device structure is as in fig. 1 (the difference is that step 2 is opposite to step 3).

The organic solar photovoltaic module passes the same test conditions as example 1 under the standard 100mW/cm ² And under the AM1.5G solar simulator, the device does not work. This is because the positioning is prone to some misalignment when depositing the conductive layer, and it has been observed that the deposition of conductive material into the P1 recess results in incomplete separation of the first electrode layer, and thus, the device does not operate.

Claims

1. An organic solar cell module comprises a substrate (100) and a plurality of solar cells, wherein the solar cells are positioned on the substrate (100); and the solar cell unit is first electrode layer (101), photovoltaic layer (102), second electrode layer (103) from bottom to top in proper order, its characterized in that:

etching a connecting channel (P2) on the photovoltaic layer (102), wherein the connecting channel (P2) penetrates through the photovoltaic layer (102) to the conductive layer (1A, 1B) area, and the connecting channel (P2) is filled with a material of the second electrode layer (103) so that adjacent sub-electrodes are connected in series;

etching an isolation trench (P3) in the second electrode layer (103), wherein the isolation trench (P3) penetrates through the second electrode layer (103) and the photovoltaic layer (102) to the conductive layer (1A, 1B) area;

2. The organic solar cell module according to claim 1, wherein: the material of the conductive layers (1A, 1B) is selected from a metallic material, a carbon material, a conductive polymer or a composite material.

3. The organic solar cell module according to claim 1, wherein: the material of the conductive layers (1A, 1B) is selected from metals of aluminium, gold, platinum, silver, copper, indium, bismuth, lead, tin, zinc, iron, cobalt, nickel, titanium, zirconium, molybdenum, tungsten, chromium or tantalum or alloys comprising any of the above metals.

4. The organic solar cell module according to claim 1, wherein: the first electrode layer (101) material is selected from a conductive metal oxide, a conductive polymer, a conductive carbon material or a nano-conductive material.

5. The organic solar cell module according to claim 1, wherein: the photovoltaic layer (102) comprises a first charge transport layer (104), a photoactive layer (105), a second charge transport layer (106); the insulating trench (P1) is filled with the same material (104) as the first charge transport layer.

6. The organic solar cell module according to claim 1, wherein: the separation channel (P3) is 20 to 100um away from the connection channel (P2).

7. The organic solar cell module according to claim 1, wherein: the material of the second electrode layer (103) is selected from a metal material, an alloy, a conductive metal oxide, a conductive polymer, a conductive carbon material or a nano conductive material.

8. The organic solar cell module according to claim 1, wherein: the connection channel (P1) is spaced apart from the insulation channel (P2) by 20 to 100um.

9. The organic solar cell module according to claim 1, wherein: the laser power required to etch the material of the conductive layers (1A, 1B) is greater than the power required to etch the material of the first electrode layer (101).

10. The method according to any of the preceding claims, wherein the method comprises:

step 1, forming a first electrode layer (101) on a substrate (100);