CN115863121B - Micro-well type detector and preparation method thereof - Google Patents
Micro-well type detector and preparation method thereof Download PDFInfo
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- CN115863121B CN115863121B CN202310139062.XA CN202310139062A CN115863121B CN 115863121 B CN115863121 B CN 115863121B CN 202310139062 A CN202310139062 A CN 202310139062A CN 115863121 B CN115863121 B CN 115863121B
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Abstract
The invention discloses a micro-well type detector and a preparation method thereof, and relates to the technical field of micro-structure gas detectors; carrying out laser drilling on the detector base material by adopting a laser cutting technology to obtain a microporous structure film; the surface of the read-out circuit board with the resistive electrode is pressed and connected on the solid glue layer of the microporous structure film to obtain a well-type electron multiplication structure; the drift electrode is arranged at the top end inside the gas box structure by taking the well-shaped electron multiplication structure as a base and taking the gas box structure as a shell. The invention adopts the laser cutting process to replace the etching method with serious pollution, and adopts the hot-pressing technology to press the microporous structure film with the solid glue layer and the read-out circuit board, thereby greatly simplifying the process equipment for manufacturing the detector and increasing the popularization of the micro-well type detector technology.
Description
Technical Field
The invention relates to the technical field of microstructure gas detectors, in particular to a micro-well type detector and a preparation method thereof.
Background
The microstructure gas detector (MPGD) has the excellent characteristics of high counting rate, radiation resistance, high precision, position sensitivity and the like, is the front direction of the current gas detector research, and has wide application requirements in the aspects of nuclear and particle physics experiment research, nuclear industry radiation detection, radiomedical imaging and the like. In recent years, research on a resistive micro-well type detector (mu-RWELL) has been advanced by benefiting from technical development of micro-nano technology, etching, novel resistive electrode and the like.
At present, the preparation method of the existing mu-RWELL detector adopts a preparation process of the GEM detector, and as the preparation process of the GEM detector uses a non-environment-friendly or even extremely toxic chemical solvent in the etching process, the preparation method of the existing mu-RWELL detector cannot meet the requirement of environment-friendly production. In addition, the key technology for preparing the existing mu-RWELL detector is to prepare a GEM film with single-sided copper coating by using an etching process, and attach the GEM film on a readout PCB by adopting a PCB lamination process to form a mu-RWELL core well-type electron multiplication structure, however, when the well-type electron multiplication structure is prepared by adopting a lamination method, large-scale professional lamination equipment is required, so that the preparation process of the detector is complex. Therefore, the preparation of the [ mu ] -RWELL detector is limited by the two aspects, so that the [ mu ] -RWELL technology is difficult to popularize and use.
Disclosure of Invention
The invention aims to provide a micro-well type detector which is pollution-free in the preparation process and simple in preparation process and a preparation method thereof.
In order to achieve the above object, the present invention provides the following solutions:
the preparation method of the micro-well type detector comprises the following steps:
step 1: laminating the solid glue layer on one side of the insulating layer in a film coating mode, and manufacturing a conductive cathode layer on the other side of the insulating layer in a film coating mode to obtain a detector substrate;
step 2: carrying out laser drilling on the detector base material by adopting a laser cutting technology to obtain a microporous structure film;
step 3: the surface of the read-out circuit board with the resistive electrode is pressed and connected to the solid glue layer of the microporous structure film to obtain a well-type electron multiplication structure; the reading circuit board comprises a resistive anode layer positioned on the surface of the printed circuit board and a signal collecting circuit positioned in the middle layer of the printed circuit board;
step 4: and the drift electrode is arranged at the top end inside the gas box structure by taking the well-type electron multiplication structure as a base and taking the gas box structure as a shell.
Optionally, the solid glue layer is one of a thermal bonding glue and a photosensitive curing glue.
Optionally, when the solid glue layer adopts thermal bonding type glue, the crimping is hot press joint, and when the solid glue layer adopts photosensitive curing glue, the crimping is carried out in cooperation with illumination.
Optionally, the conductive cathode layer is a low-resistance conductive material, and the resistivity is not higher than kiloohm cm.
Optionally, the insulating layer is an insulating film, and the temperature resistance of the insulating film is not lower than 100 ℃.
Optionally, the thickness of the conductive cathode layer is not higher than 10 μm, the thickness of the insulating layer is 20-300 μm, and the thickness of the solid glue layer is not more than 30 μm.
Optionally, the microporous structure of the microporous structure membrane is a symmetrical structure, and the edge of the microporous structure is smooth and has no edges and corners.
Optionally, the resistive anode layer is one of a screen printing resistive electronic paste film, a germanium film or a diamond-like carbon resistive film.
Optionally, the drift electrode is 3-20mm away from the readout circuit board.
The invention also provides a micro-well type detector, comprising: the electron multiplication device comprises a well-type electron multiplication structure, a gas box structure buckled on the well-type electron multiplication structure and a drift electrode arranged at the top end inside the gas box structure;
the well-type electron multiplication structure comprises a microporous structure membrane and a reading circuit board, wherein one surface of the reading circuit board with a resistive electrode layer is pressed on a solid glue layer of the microporous structure membrane; the reading circuit board comprises a resistive anode layer positioned on the surface of the printed circuit board and a signal collecting circuit positioned in the middle layer of the printed circuit board;
the microporous structure membrane is obtained by performing laser drilling on a detector substrate by adopting a laser cutting technology;
the detector substrate comprises a solid glue layer, an insulating layer and a conductive cathode layer, wherein the solid glue layer is attached to one side of the insulating layer in a film coating mode, and the conductive cathode layer is manufactured on the other side of the insulating layer in a film coating mode.
According to the specific embodiment provided by the invention, the following technical effects are disclosed: the invention provides a micro-well type detector and a preparation method thereof, wherein a solid glue layer is attached to one side of an insulating layer in a film coating mode, and a conductive cathode layer is manufactured on the other side of the insulating layer in a film coating mode to obtain a detector substrate; then, laser cutting technology is adopted to drill holes on the detector base material by laser, and a microporous structure film is obtained; then, one surface of the read-out circuit board with the resistive electrode is pressed and connected to the solid glue layer of the microporous structure film to obtain a well-type electron multiplication structure; the read-out circuit board comprises a resistive anode layer positioned on the surface of the printed circuit board and a signal collecting circuit positioned in the middle layer of the printed circuit board; and finally, taking the well-shaped electron multiplication structure as a base, taking the gas box structure as a shell, and arranging the drifting electrode at the top end inside the gas box structure. According to the invention, a laser cutting process is adopted to replace an etching method with serious pollution in the micro-RWELL, the connection of the microporous structure film and the readout circuit board is realized by adopting a crimping technology and matching with solid gel, the process equipment for manufacturing the detector is greatly simplified, and the popularization of the micro-RWELL technology is increased.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a method for manufacturing a micro-well type detector according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a substrate structure of a detector in accordance with an embodiment of the present invention;
FIG. 3 is a schematic view of a cylindrical microporous structure in an embodiment of the present invention;
FIG. 4 is a schematic view of a conical microporous structure according to an embodiment of the present invention;
FIG. 5 is a schematic view of a microporous structured membrane in an embodiment of the present invention;
fig. 6 is a schematic diagram of a rolling method for manufacturing a thermal bonding type solid glue layer according to an embodiment of the invention;
FIG. 7 is a schematic diagram of a detector according to an embodiment of the present invention;
symbol description:
the device comprises an insulating layer-1, a solid adhesive layer-2, a conductive cathode layer-3, a cylindrical micropore structure-4, a conical micropore structure-5, a micropore structure membrane-6, a read-out circuit board-7, a resistive anode layer-8, a signal collecting circuit-9, a drift electrode-10, a gas box structure-11 and a well-type electron multiplying structure-12.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention aims to provide a micro-well type detector which is pollution-free in the preparation process and simple in preparation process and a preparation method thereof.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
As shown in FIG. 1, the preparation method of the micro-well type detector comprises the following steps:
step 1: and (3) attaching the solid glue layer 2 to one side of the insulating layer 1 in a film coating mode, and manufacturing the conductive cathode layer 3 on the other side of the insulating layer 1 in a film coating mode to obtain the detector substrate.
Step 2: and (3) carrying out laser drilling on the detector base material by adopting a laser cutting technology to obtain the microporous structure membrane 6.
Step 3: the surface of the read-out circuit board 7 with the resistive electrode is pressed and connected on the solid glue layer 2 of the microporous structure film 6 to obtain a well-type electron multiplication structure 12; the readout circuit board 7 comprises a resistive anode layer 8 on the surface of the printed wiring board and a signal collection circuit 9 in the middle layer of the printed wiring board.
Step 4: the drift electrode 10 is arranged at the top end inside the gas box structure 11 by taking the well-type electron multiplying structure 12 as a base and the gas box structure 11 as a shell.
In some embodiments, step 1 may be specifically implemented by:
the material for preparing the detector substrate, as shown in fig. 2, is a thin film comprising a three-layer structure of a conductive electrode layer, an insulating layer and a solid glue layer 2.
The conductive electrode layer is specifically a conductive cathode layer 3, the constituent material is a low-resistance conductive material (such as metal and its compound), and the resistivity of the conductive cathode layer 3 is not higher than kiloohm cm. The insulating layer is an insulating film, and is usually a polyester film (PET, polyimide) with high insulating property and certain temperature resistance, polyether ether ketone resin (PEEK) and the like, wherein the thickness of the insulating film is 20-300 mu m, the thickness uniformity is better than 5%, and the temperature resistance is not lower than 100 ℃. The fixing adhesive layer is usually a hot-melt adhesive film, the thickness of which is not higher than 30 mu m, and the thermal bonding temperature is not lower than 50 ℃.
And carrying out ultrasonic cleaning and alcohol cleaning on the materials of the conductive cathode layer 3, the solid glue layer 2 and the insulating layer, and naturally airing.
And (5) attaching the dried material to obtain the detector base material. Wherein, the solid glue layer 2 is attached to one side of the insulating layer 1 by adopting a film coating mode, the conductive cathode layer 3 is manufactured on the other side of the insulating layer 1 by adopting a film coating mode (thermal evaporation or magnetron sputtering), and the thickness of an electrode manufactured by film coating is usually not more than 1 mu m.
In some embodiments, step 1 may be specifically implemented by:
a commercial film having copper thickness of not more than 10 μm and copper-clad on one side and a solid glue layer 2 were prepared.
Ultrasonic cleaning and alcohol cleaning are carried out on the commercial film with single-sided copper coating and the solid adhesive layer 2, natural airing is carried out, and the solid adhesive layer 2 is attached to one side of the commercial film with single-sided copper coating, which is not coated with copper, in a film coating mode, so that the detector substrate is obtained.
In some embodiments, step 2 may be specifically implemented by:
and (3) carrying out ultrasonic cleaning and alcohol cleaning on the obtained detector base material, naturally airing, and then adopting a high-precision pulse laser cutting method on the detector base material to manufacture a detector micropore structure, and cutting the detector base material into a micropore structure by setting fixed laser power.
As shown in fig. 3 and 4, the cut microporous structure presents a symmetrical structure such as a cylindrical microporous structure 4 or a conical microporous structure 5, and the edges are smooth and have no edges and corners so as to ensure that the electric field of the detector is uniform and has no distortion.
The top view of the microporous membrane 6 after laser cutting is shown in fig. 5, and the micropore diameter d (upper conductive layer) is typically between 0.5 and 1.5 times the sum of the thicknesses of the insulating layer and the solid glue layer in the substrate, and the pore pitch p is between 1.5 and 3 times the micropore diameter. For conical micropores, the diameter of the lower layer of micropores (solid glue layer) is between 0.5 and 1.5 times of that of the upper layer of micropores.
In some embodiments, step 3 may be specifically implemented by:
and (3) carrying out ultrasonic cleaning and alcohol cleaning on the prepared microporous structure film 6, and after naturally airing, attaching the microporous structure film 6 to the read-out circuit board 7.
As shown in fig. 6, the readout circuit board 7 and the microporous structure film 6 are heated and rolled by a heating roller shaft, and the solid glue layer of the microporous structure film 6 is bonded with the resistive anode side of the readout circuit board 7 into a whole after being heated and pressed, so that the preparation of the well-type electron multiplying structure 12 is realized.
Wherein, the read-out circuit board 7 is a printed circuit board with a resistive electrode on the surface and a signal collecting circuit 9 in the middle layer, and the resistive anode adopts screen printing resistive electronic paste or vacuum coating to manufacture a resistive film structure such as germanium film or diamond-like carbon.
In particular, when the solid glue layer 2 on the microporous membrane 6 is a photosensitive curing glue, the crimping method used for preparing the well-type electron multiplying structure 12 needs to be matched with illumination.
In some embodiments, step 4 may be specifically implemented by:
the prepared well-type electron multiplying structure 12 is taken as a base, the gas box structure 11 is taken as a shell, and the drift electrode 10 is arranged at the top end inside the gas box structure 11, so that the detector is assembled. Typically the drift electrode 10 is fixed 3-20mm above the readout plate of the detector.
The invention also provides a micro-well type detector, comprising:
a well-type electron multiplying structure 12, a gas box structure 11 buckled on the well-type electron multiplying structure 12, and a drifting electrode 10 arranged at the top end inside the gas box structure 11;
the well-type electron multiplication structure 12 comprises a microporous structure film 6 and a read-out circuit board 7, wherein one surface of the read-out circuit board 7 with a resistive electrode layer is pressed and connected on the solid glue layer 2 of the microporous structure film 6; the read-out circuit board 7 comprises a resistive anode layer 8 positioned on the surface of the printed circuit board and a signal collecting circuit 9 positioned in the middle layer of the printed circuit board;
the microporous structure membrane 6 is obtained by performing laser drilling on a detector substrate by adopting a laser cutting technology;
the detector substrate comprises a solid glue layer 2, an insulating layer 1 and a conductive cathode layer 3, wherein the solid glue layer 2 is attached to one side of the insulating layer 1 in a film coating mode, and the conductive cathode layer 3 is manufactured on the other side of the insulating layer 1 in a film coating mode.
In summary, the invention has the following advantages: the invention provides a Micro-WELL type detector (Micro-WELL) structure and a manufacturing method based on laser drilling and crimping technology, which replace an etching method with serious pollution in Micro-RWELL, and specially prepare a Micro-pore structure film 6 of a conductive cathode layer-insulating layer-solid glue layer, so that a WELL type electron multiplying structure 12 can be manufactured through crimping technology, replace a laminating method, greatly simplify the process equipment for manufacturing the detector, and the material and parameter selection of the detector are not limited by the etching and laminating methods any more, so that when facing different application requirements and scenes, the method provides a richer material selection and parameter optimization space for the development of the WELL type detector.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other. For the system disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to assist in understanding the methods of the present invention and the core ideas thereof; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In summary, the present description should not be construed as limiting the invention.
Claims (8)
1. The preparation method of the micro-well type detector is characterized by comprising the following steps of:
step 1: laminating the solid glue layer on one side of the insulating layer in a film coating mode, and manufacturing a conductive cathode layer on the other side of the insulating layer in a film coating mode to obtain a detector substrate;
step 2: carrying out laser drilling on the detector base material by adopting a laser cutting technology to obtain a microporous structure film; the microporous structure of the microporous structure membrane is a through hole; the micropore structure is a cylindrical micropore structure or a conical micropore structure;
step 3: the surface of the read-out circuit board with the resistive electrode is pressed and connected to the solid glue layer of the microporous structure film to obtain a well-type electron multiplication structure; the reading circuit board comprises a resistive anode layer positioned on the surface of the printed circuit board and a signal collecting circuit positioned in the middle layer of the printed circuit board;
wherein the solid glue layer is one of thermal bonding glue and photosensitive curing glue; when the solid glue layer adopts thermal bonding glue, the press connection is hot press connection, and when the solid glue layer adopts photosensitive curing glue, the press connection is matched with illumination;
step 4: the well-type electron multiplication structure is used as a base, the gas box structure is used as a shell, and the drifting electrode is arranged at the top end inside the gas box structure.
2. The method of claim 1, wherein the conductive cathode layer is a low resistance conductive material having a resistivity of no more than kiloohm cm.
3. The method for manufacturing a micro-well detector according to claim 1, wherein the insulating layer is an insulating film, and the insulating film has a temperature resistance of not less than 100 ℃.
4. The method for manufacturing a micro-well type detector according to claim 1, wherein the thickness of the conductive cathode layer is not higher than 10 μm, the thickness of the insulating layer is 20-300 μm, and the thickness of the solid glue layer is not more than 30 μm.
5. The method for manufacturing a micro-well type detector according to claim 1, wherein the micro-pore structure of the micro-pore structure membrane is a symmetrical structure, and the edges of the micro-pore structure are smooth and have no edges.
6. The method for manufacturing a micro-well type detector according to claim 1, wherein the resistive anode layer is one of a screen printing resistive electronic paste film, a germanium film or a diamond-like carbon resistive film.
7. The method of manufacturing a micro-well detector according to claim 1, wherein the drift electrode is 3-20mm from the readout circuit board.
8. A micro-well probe, comprising: the electron multiplication device comprises a well-type electron multiplication structure, a gas box structure buckled on the well-type electron multiplication structure and a drift electrode arranged at the top end inside the gas box structure;
the well-type electron multiplication structure comprises a microporous structure membrane and a reading circuit board, wherein one surface of the reading circuit board with a resistive electrode layer is pressed on a solid glue layer of the microporous structure membrane; the reading circuit board comprises a resistive anode layer positioned on the surface of the printed circuit board and a signal collecting circuit positioned in the middle layer of the printed circuit board;
the microporous structure membrane is obtained by performing laser drilling on a detector substrate by adopting a laser cutting technology; the holes of the microporous structure membrane are through holes; the micropore structure is a cylindrical micropore structure or a conical micropore structure;
the detector base material consists of a solid glue layer, an insulating layer and a conductive cathode layer, wherein the solid glue layer is attached to one side of the insulating layer in a film coating mode, and the conductive cathode layer is manufactured on the other side of the insulating layer in a film coating mode;
wherein the solid glue layer is one of thermal bonding glue and photosensitive curing glue; when the solid glue layer adopts thermal bonding type glue, the compression joint is hot press joint, and when the solid glue layer adopts photosensitive curing glue, the compression joint is matched with illumination.
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| JP5022611B2 (en) * | 2006-03-02 | 2012-09-12 | 独立行政法人理化学研究所 | Method for manufacturing gas electron amplification foil |
| CN105555044A (en) * | 2015-12-09 | 2016-05-04 | 中国科学院大学 | Well-type gas electron multiplier and manufacturing method and application thereof |
| CN109187663A (en) * | 2018-09-04 | 2019-01-11 | 中国科学院大学 | A kind of grid-type gas electronic multiplication detector |
| CN110112050B (en) * | 2019-04-23 | 2020-12-25 | 中国科学技术大学 | Self-quenching ignition amplification unit, preparation method thereof, detector and application |
| CN110137070B (en) * | 2019-04-23 | 2020-10-27 | 中国科学技术大学 | Multilayer thick gas electron multiplier for inhibiting charging effect and preparation method thereof |
| CN113539780A (en) * | 2020-04-10 | 2021-10-22 | 群创光电股份有限公司 | Gas electron multiplier composite membrane, gas electron multiplier comprising same and detection device |
| CN111564348B (en) * | 2020-04-23 | 2021-08-13 | 中国科学技术大学 | Preparation method of amplifying unit of high-counting-rate resistive micro-well type detector |
| CN113433580B (en) * | 2021-06-25 | 2023-03-10 | 中国科学技术大学 | Gas detector manufacturing method, gas detector and ray detection device |
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