CN1158402C - Preparation Mn-Co film with low temperature coefficient of resistance - Google Patents
Preparation Mn-Co film with low temperature coefficient of resistance Download PDFInfo
- Publication number
- CN1158402C CN1158402C CNB011071605A CN01107160A CN1158402C CN 1158402 C CN1158402 C CN 1158402C CN B011071605 A CNB011071605 A CN B011071605A CN 01107160 A CN01107160 A CN 01107160A CN 1158402 C CN1158402 C CN 1158402C
- Authority
- CN
- China
- Prior art keywords
- film
- temperature
- resistance
- manganese
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to a preparation method of a manganese copper film with a low-resistance temperature coefficient. The manganese copper film is deposited by a magnetic control sputtering method or a radio-frequency sputtering method. The resistance temperature coefficient of the prepared manganese copper film can reach (+/-) 10*10<-6>/DEG C by controlling the temperature of a base board, the temperature of a manganese copper target and heat treatment temperature. The present invention achieves a level equivalent to that of bulk materials.
Description
The present invention is relevant with the method for deposition Mn-Co film on insulated substrate, and is especially relevant with the preparation method of Mn-Co film with low temperature coefficient of resistance power precision resistance film on the pressure transmitter.
Copper-manganese is a kind of ternary-alloy material, and major ingredient is manganese .10 ∽ 15%, nickel 0 ∽ 4%, and all the other are the impurity such as iron, silicon of copper and trace.This material is a kind of widely used precision electrical resistance alloy material, and its resistance temperature system is less than ± 10 * 10
-6/ ℃.But this material only with the form production of manganese-copper filament or copper-manganese sheet, along with the miniaturization of electronic devices and components, needs the corresponding Precise Alloy thin-film material of development at present.
On the other hand, mauganin also is a kind of pressure drag material, is mainly used in 10,000 hyperpressures more than the normal atmosphere of test with the transmitter of its making.Therefore such pressure is accompanied by transient high temperature usually, requires the temperature coefficient of resistance of sensitive material should be enough low, to overcome the influence of temperature to the pressure test precision.
The purpose of this invention is to provide a kind of method for preparing Mn-Co film with low temperature coefficient of resistance, so that prepared Mn-Co film can be used for making film type copper-manganese high pressure sensor, or as the precision resistance film.
The present invention is achieved in that
The preparation method of low resistance temperature system Mn-Co film of the present invention comprises with sputtering method or method of evaporation depositing Mn-Co film on substrate.
Sputtering method of the present invention is the shallow method of penetrating of magnetron sputtering method or radio frequency, and target adopts the mauganin material, and it is as follows to contain golden component: weight part.
Copper 84-87
Manganese 11-13
Nickel 2-3.
The temperature of copper-manganese target≤80 ℃ in the sputtering technology of the present invention.
The Heating temperature of insulated substrate is 15-250 ℃ in the sputtering technology of the present invention.
Carry out vacuum heat treatment in the sputtering technology of the present invention after the Mn-Co film deposition, thermal treatment temp is 375-425 ℃, and time 1-3 hour, vacuum tightness will be higher than 5 * 10
-3Pa.
In the sputtering technology of the present invention, base vacuum is less than 3 * 10
-3Pa.
In the sputtering technology of the present invention, adopt pure argon as working gas, argon pressure is 0.1-5Pa.
The present invention applies on the copper-manganese target-200 ∽-800V voltage.
Sputtering method of the present invention is the planar magnetic control sputtering method, and insulated substrate is a crystallite glass substrate, and substrate temperature is 200 ℃.Target mauganin component comprises Cu 86.03 wt%, Mn11.39wt%, and Ni 2.57wt%, base vacuum are 2.7 * 10
-3Pa, argon pressure are 0.4Pa, and the temperature of copper-manganese target is 50 ℃, and the Mn-Co film thermal treatment temp is 400 ℃, and 1 hour time, vacuum tightness is 3 * 10
-3Pa.
The vacuum system of deposition Mn-Co film preferably adopts no oil system, as the molecular pump system.If adopt diffusion pump as high-vacuum pump, should use liquid nitrogen cold trap.
Before the sputter, at first vacuum chamber is evacuated to 3 * 10
-3The high vacuum that Pa is above.Feed pure argon then as working gas, inflation pressure is 0.1 ∽ 5Pa.On the copper-manganese target, apply subsequently-200 ∽-voltage of 800V is so that argon gas ionization produces sputter.The processing parameter of sputter mainly will be controlled 2 points: first is the Heating temperature of insulated substrate, is advisable for 250 ℃ with 150 ∽.Temperature is low excessively, and thin film crystallization is bad, temperature coefficient of resistance TCR height.Otherwise temperature is too high, and the easy oxidation blackout of film equally also can increase TCR.Second is the temperature of copper-manganese target when controlling sputter, must carry out sufficient water-cooled to it, makes its temperature be not more than 80 ℃.The water-cooling system design of target is bad, or under the situation of line clogging, the TCR of the Mn-Co film that deposits is often up to 200 * 10
-6/ ℃.After adopting above-mentioned two steps measure, the TCR of Mn-Co film can be controlled in ± 15 ∽ 20 * 10
-6/ ℃.Final step technology is vacuum heat treatment, with Mn-Co film 5 * 10
-3Carry out vacuum annealing under the air pressure below the Pa, annealing temperature is 425 ℃ of 375 ∽, and the time is 1 ∽ 3 hours, the TCR of Mn-Co film can be reduced to ± 10 * 10
-6/ ℃.
The present invention has following advantage:
Analysis of components shows, cupric 85 ± 0.2wt% in the prepared Mn-Co film of worker of the present invention contains manganese 12.5 ± 0.3wt%, and nickeliferous 2.6 ± 0.2wt% has kept the composition with the target basically identical.X-ray diffraction is the result show, the Mn-Co film that TCR is low has only (111) diffraction peaks, and the high Mn-Co film of TCR also has (200) and (220) two small peaks except this diffraction peak.
Technology of the present invention is simple, processing ease, and the composition of prepared Mn-Co film has kept the standard component of mauganin, and its temperature coefficient of resistance is ± 10 * 10
-6/ ℃, reached the level suitable with bulk material.This index has guaranteed that Mn-Co film can be used as the sensitive material use of hyperpressure transmitter, or as the precision resistance material.
Following is embodiments of the invention:
Adopt planar magnetic control sputtering method deposition Mn-Co film on crystallite glass substrate, target is a mauganin, contains Cu 86.03wt%, Mn 11.39wt%, and Ni 2.57wt%, vacuum system adopts the turbo-molecular pump system, and base vacuum is evacuated to 2.7 * 10
-3Pa, argon pressure is 0.4Pa, and during sputter, the voltage on the target is-240V, and the space discharging current is 800mA, and substrate temperature is 200 ℃, 50 ℃ of the temperature of copper-manganese target.Sputtering time is 18 minutes, and film thickness is 3.6 μ m, and after sputter finished, 400 ℃ of vacuum heat treatment of having carried out 1 hour, vacuum tightness was 3 * 10 to Mn-Co film
-3Pa. the temperature coefficient of resistance of gained Mn-Co film is-5 * 10
-6/ ℃.
Claims (3)
1, a kind of preparation method of Mn-Co film with low temperature coefficient of resistance, system deposits Mn-Co film with sputtering method, it is characterized in that said sputtering method is magnetron sputtering or radio frequency sputtering method, target adopts the mauganin material, alloy compositions following (weight part): copper 84-87%, manganese 11-13%, nickel 2-3%, the temperature of copper-manganese target≤80 ℃ in the sputtering technology, the Heating temperature of insulated substrate is 150-250 ℃, and base vacuum is less than 3 * 10
-3Pa adopts pure argon as process gas, and argon pressure is 0.1-5Pa.
2, method according to claim 1 is characterized in that carrying out vacuum heat treatment in the sputtering technology after the Mn-Co film deposition, and thermal treatment temp is 375-425 ℃, and time 1-3 hour, vacuum tightness will be higher than 5 * 10
-3Pa.
3, method according to claim 1 is characterized in that in the sputtering technology, applies on the copper-manganese target-200 ∽-voltage of 800V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011071605A CN1158402C (en) | 2001-02-22 | 2001-02-22 | Preparation Mn-Co film with low temperature coefficient of resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011071605A CN1158402C (en) | 2001-02-22 | 2001-02-22 | Preparation Mn-Co film with low temperature coefficient of resistance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1312397A CN1312397A (en) | 2001-09-12 |
| CN1158402C true CN1158402C (en) | 2004-07-21 |
Family
ID=4656110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011071605A Expired - Fee Related CN1158402C (en) | 2001-02-22 | 2001-02-22 | Preparation Mn-Co film with low temperature coefficient of resistance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1158402C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9963777B2 (en) * | 2012-10-08 | 2018-05-08 | Analog Devices, Inc. | Methods of forming a thin film resistor |
| CN106205910B (en) * | 2016-07-26 | 2018-11-09 | 厦门火炬特种金属材料有限公司 | A kind of combined precision resistance band |
| CN113555495B (en) * | 2021-07-20 | 2024-03-19 | 广东工业大学 | Film pressure sensor and preparation method and application thereof |
-
2001
- 2001-02-22 CN CNB011071605A patent/CN1158402C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1312397A (en) | 2001-09-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7717987B2 (en) | Coating material based on a copper-indium-gallium alloy, in particular for the production of sputter targets, tubular cathodes and the like | |
| US8007693B2 (en) | Zinc oxide based transparent electric conductor, sputtering target for forming of the conductor and process for producing the target | |
| KR20160067198A (en) | Sputtering target for forming wiring film of flat panel display | |
| TW200533764A (en) | Textured-grain-powder metallurgy tantalum sputter target | |
| CN113913751B (en) | Cu-high-entropy alloy film and preparation method thereof | |
| EP2500447A1 (en) | Cu-in-ga-se quaternary alloy sputtering target | |
| US4063211A (en) | Method for manufacturing stable metal thin film resistors comprising sputtered alloy of tantalum and silicon and product resulting therefrom | |
| EP2277191A1 (en) | Molybdenum-niobium alloys, sputtering targets containing such alloys, methods of making such targets, thin films prepared therefrom and uses thereof | |
| CN100365160C (en) | Preparation method of low resistivity metal oxide lanthanum nickelate | |
| CN103108977B (en) | Cu-In-Ga-Se quaternary alloy sputtering target | |
| JPH0541694B2 (en) | ||
| CN1158402C (en) | Preparation Mn-Co film with low temperature coefficient of resistance | |
| JP4175071B2 (en) | Oxide sintered body and sputtering target | |
| JP2003243325A (en) | Sputtering target for forming copper alloy wiring film and copper alloy wiring film little affected by heat and formed by using the same | |
| CN115976478B (en) | Silver sulfide resistant alloy target and preparation method thereof | |
| JP5125112B2 (en) | Wiring and electrode for liquid crystal display device free from thermal defect and sputtering target for forming them | |
| CN113088902B (en) | Process method for preparing single-phase high manganese-silicon film under condition of raw material oxidation | |
| JP3288301B2 (en) | Thin film resistor, method of manufacturing the same, and wiring board incorporating the thin film resistor | |
| CN113151793B (en) | Preparation method of high-strength high-plasticity copper-aluminum nano metal multilayer film | |
| JP2741814B2 (en) | Method for producing tantalum metal thin film | |
| JP3431318B2 (en) | Method for producing chalcopyrite structure semiconductor thin film | |
| WO2022210428A1 (en) | Cr-si film | |
| CN115747744B (en) | Gallium indium oxide film and preparation method thereof | |
| JP2001125123A (en) | Electrode, wiring material and sputtering target for liquid crystal display | |
| CN1837401A (en) | Method for preparing barium strontium titanate ferroelectric film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |