CN115826854A

CN115826854A - Storage method, device, equipment and storage medium

Info

Publication number: CN115826854A
Application number: CN202211397268.4A
Authority: CN
Inventors: 古兆强
Original assignee: Fibocom Wireless Inc
Current assignee: Fibocom Wireless Inc
Priority date: 2022-11-09
Filing date: 2022-11-09
Publication date: 2023-03-21
Also published as: WO2024098936A1

Abstract

The embodiment of the application provides a storage method, a storage device, storage equipment and a storage medium. According to the method, by configuring part of the storage partitions in the storage medium into the storage partitions with low storage density and storing the key data in the storage partitions with low storage density, the stability of the storage partitions with low storage density in a high-temperature environment is utilized, so that the key data can be prevented from being damaged in the surface mounting process of the intelligent module where the storage medium is located by a user, and the safety of the data is improved.

Description

Storage method, device, equipment and storage medium

Technical Field

The present application relates to the field of data storage, and in particular, to a storage method, apparatus, device, and storage medium.

Background

Electronic devices such as mobile phones and POS devices generally have their own motherboard. At the time of production and manufacture of the motherboard, the production provider will store critical data such as calibration parameters, IMEI, etc. in the storage medium in the motherboard. Later, when a downstream manufacturer uses the motherboards for two times of production, the motherboards are often required to be subjected to surface mounting again, and then specific test software is stored in a storage medium of the motherboards according to product types to test and deliver the finally molded products.

It should be understood that critical data such as calibration parameters, IMEI, etc. need to be stored in the motherboard all the time to ensure that the motherboard can function properly in the subsequent electronic products. However, the data storage capacity of the large-capacity storage medium used in the current motherboard is poor at high temperature, and when a downstream manufacturer carries out surface mounting on the motherboard, the high-temperature environment generated during the surface mounting may cause the key data originally stored in the motherboard to be damaged. Therefore, new storage methods need to be studied.

Disclosure of Invention

The embodiment of the application discloses a storage method, a storage device, storage equipment and a storage medium. According to the method, by configuring part of the storage partitions in the storage medium into the storage partitions with low storage density and storing the key data in the storage partitions with low storage density, the stability of the storage partitions with low storage density in a high-temperature environment is utilized, so that the key data can be prevented from being damaged in the surface mounting process of the intelligent module where the storage medium is located by a user, and the safety of the data is improved.

In a first aspect, the present application provides a storage method, where the method is applied to an intelligent module, and the method includes: configuring a storage density of a first storage partition in a storage medium to a first storage density and a storage density of a second storage partition to a second storage density, the first storage density being less than the second storage density; the first storage partition and the second storage partition are two independent partitions in the storage medium, and the stability of the data in the first storage partition under the high-temperature environment is better than that of the data in the second storage partition under the high-temperature environment; and storing target data into the first storage partition, wherein the target data is used for performing performance maintenance on the intelligent module.

In the method, the storage medium may be a flash memory chip with a large capacity, such as an embedded multimedia card (EMMC) or a Universal Flash Storage (UFS), and the storage medium is deployed or integrated in the smart module. Specifically, the smart module may be a motherboard in a mobile device such as a mobile phone or a POS device, and a manufacturer may perform secondary assembly and production based on the smart module to obtain the mobile device such as the mobile phone or the POS device.

It is to be understood that during the production of the smart module, the supplier will store critical data (i.e. the target data) such as calibration parameters, international mobile equipment identity, etc. in the storage medium. The calibration parameters may include radio frequency calibration parameters, power calibration parameters, and sensitivity calibration parameters. When the mobile device is obtained by using the intelligent module for production, because the mobile device includes a plurality of devices and there are differences between the devices, the mobile device needs to be calibrated by using the calibration parameters during production, so as to ensure that the intelligent module and the mobile device can normally perform the functions provided by the mobile device, and the parameters can be used for maintaining the performance of the mobile device in the aspects of radio frequency, power, communication and the like during the use process of a user. The International Mobile Equipment Identity (IMEI) is composed of a model approval number (TAC), a final assembly number (FAC), a Serial Number (SNR), and a check code (SP), and can be read from and written to a memory (i.e., the storage medium). It is "archives" and "identification card number" of intelligent module in the manufacturer can be used for discerning the mobile device marks the global uniqueness of this equipment. In addition, the IMEI can also be identified by a signal transmission tower, which can help security agencies locate the location of the handset and its user, and also help find store information that sells the mobile device. Therefore, the target data, which needs to be always stably stored in the storage medium, cannot be destroyed.

However, after the smart module is produced, downstream manufacturers use the smart module for secondary production. In secondary production, the intelligent module often needs to be subjected to surface mounting again, and then specific test software is stored in the storage medium of the intelligent module according to the product type to test and deliver the finally formed product. However, since the mass production cost of semiconductor chips is substantially proportional to the area of silicon chip occupied, the large-capacity storage medium used in the current intelligent module is basically stored in the high-storage-density storage technology in order to pursue the storage density and reduce the cost of the flash memory. The obvious disadvantage is poor data storage capacity at high temperature.

Taking TLC (Tripple Level Cell) technology as an example, the TLC technology is a storage method with high storage density property commonly used in current storage media, and 3 bits of data are stored in 1 memory storage unit. It should be understood that the data stored in the memory cell is represented by the value of each bit in the memory cell, and the value of each bit is determined by the amount of charge stored in the MOS floating gate. When the amount of charge changes, the value of each bit in the memory cell changes, and the stored data content changes. When 3-bit data is stored in one memory cell, 8 values represented by 000, 001, 010, 011, 100, 101, 110 and 111 exist, and the data contents corresponding to the values are different. Similarly, the TCL technique needs to divide the charge amount into 8 levels (i.e. 8 different voltage ranges) to correspond to the 8 different data contents. However, in order to ensure the data writing speed, the threshold between the lowest voltage state and the highest voltage state is generally small, and the length of the section (or the voltage difference) corresponding to each voltage range needs to be set smaller as the charge amount needs to be divided into more levels. For example, if the lowest voltage state is 1.50V and the highest voltage state is 2.30V, the difference between them is 0.8V, and the threshold of 0.8V is divided into 8 different voltage ranges, and the interval length of each range is 0.1V, that is, the bit value corresponding to 1.50V-1.60V is 000, the bit value corresponding to 1.60V-1.70V is 001, the bit value corresponding to 1.70V-1.80V is 010, \\ 8230 \\ 8230, and so on. When a downstream manufacturer carries out surface mounting on the mainboard, electrons in the storage unit can easily run out of the floating gate of the MOS to be limited by the high-temperature environment generated in the surface mounting process, so that the stored charges of the MOS floating gate are changed, and the voltage state is also changed. If the interval length of the voltage range corresponding to each state is not large enough, the content of data is easily changed due to the change of the voltage state (for example, the voltage value is changed from 1.52V to 1.65V, the stored data may be changed from 000 to 001), and the critical data originally stored in the storage medium is destroyed.

Therefore, in order to overcome the above-mentioned drawbacks, in the present method, the storage partition of the storage medium for storing the target data may be configured as a storage partition with a low storage density. The memory partition storing the target data may be configured, for example, by SLC technology. SLC technology will only store 1bit of data in one memory cell, which corresponds to values with only two states, namely 0 and 1. As can be seen from the above description, the interval length of the voltage range corresponding to these two states can be set to be large; for example, if the lowest voltage state is 1.50V and the highest voltage state is 2.30V, and the difference between them is 0.8V, the SLC only needs to divide the threshold of 0.8V into 2 different voltage ranges, and it can be known that the interval length of each range is 0.4V, that is, the bit value corresponding to 1.50V-1.90V is 0, and the bit value corresponding to 1.90V-2.30V is 1. Therefore, even if the voltage value of the MOS floating gate is changed from 1.52V to 1.65V in a high-temperature environment, the corresponding voltage is still between 1.50V and 1.70V, the stored data is 0, and the data security can be improved.

In a possible implementation manner of the first aspect, a ratio of the capacity of the first storage partition to the total capacity of the storage medium is smaller than a first threshold.

It should be appreciated that the storage capacity of a low density storage partition is generally small, which is precisely the trade-off of capacity for data security stored therein. However, if most of the storage partitions in the storage medium are configured as low-density storage partitions, the storage capacity of the storage medium is greatly reduced. In addition, some data in the storage medium is not critical data, and the security of the data does not need to be considered too much. Therefore, in this embodiment, only a small part of the storage partitions in the storage medium may be configured as a storage partition with a low storage density, and the total capacity of the part of the storage partitions is less than the total capacity of the storage medium, for example, one percent or one thousandth. For example, in a storage medium with a total capacity of several tens to hundreds GB, a part of the storage partitions may be configured as SLC partitions, and assuming that the total capacity of the configured SLC partitions is 100MB, although originally, the storage partitions may be configured as TLC partitions, the total capacity may be increased by 200MB, but considering data security and storage capacity comprehensively, this embodiment may still configure the part of the storage partitions as SLC partitions, and although the storage capacity of 200MB needs to be sacrificed, the storage capacity of the storage medium may be substantially ignored with respect to a device with a total capacity of several tens to hundreds GB, and the storage capacity of the storage medium may not be greatly reduced, and key data may be effectively protected.

In a possible implementation manner of the first aspect, the storage density of the first storage partition is 1 bit/storage unit, and the storage density of the second storage partition is 3 bit/storage unit; or the storage density of the first storage partition is 1 bit/storage unit, and the storage density of the second storage partition is 2 bit/storage unit; or the storage density of the first storage partition is 2 bits/storage unit, and the storage density of the second storage partition is 3 bits/storage unit.

Flash memory is classified into three types according to the memory principle, namely SLC, TLC and MLC (Multi-Level Cell) mentioned in the foregoing description, where MLC, i.e. 1 memory Cell can store 2 bits of data, and there are 4 bit values represented by 00, 01, 10, 11. As can be seen from the above description, the smaller the storage density of the storage partition is, the smaller the storage capacity is, but the data stability and security are higher. Therefore, in this embodiment, the first storage partition may be configured as a storage partition having a lower storage density than the second storage partition according to the storage density of the second storage partition and the combined requirements for capacity and data security. For example, when the second memory partition in the storage medium is configured as a TLC partition, the first memory partition may be configured as an SLC partition or an MLC partition, which is not limited in this application.

In a possible implementation manner of the first aspect, the smart module is applied to a mobile device, and the target data includes at least one of a performance calibration parameter of the mobile device and an international mobile equipment identity of the mobile device.

Specifically, the calibration parameters may include radio frequency calibration parameters, power calibration parameters, and sensitivity calibration parameters, and these parameters are used to maintain the performance of the intelligent module in the aspects of radio frequency, power, communication, and the like. The IMEI is an international mobile equipment identity code, is a 'file' and an 'identity card number' of the intelligent module in a manufacturer, and can be used for identifying the mobile equipment.

In a possible implementation manner of the first aspect, after the configuring the storage density of the second storage partition to the second storage density, the method further includes: storing test software into the second memory partition; and testing the performance of the intelligent module based on the test software to obtain test data.

It should be understood that after the intelligent module is produced, a manufacturer needs to test the intelligent module, and therefore needs to download a set of test software in the intelligent module. The test software needs to be downloaded and installed in the storage medium, but the test software is only used for testing the intelligent module, and unlike the calibration parameters and the IMEI, the relevant data of the test software does not need to be reused in the secondary production process of the intelligent module. Thus, in this embodiment, data relating to the test software may be stored in the second memory partition, so that the first memory partition has more capacity to store critical data, such as calibration parameters and IMEI, that need to be used in subsequent processes.

In a possible implementation manner of the first aspect, after obtaining the test data, the method further includes: erasing the test data from the second memory partition.

After the smart module is subsequently produced for the second time to obtain mobile devices such as mobile phones and POS machines, downstream manufacturers often need to download another set of test software to test the produced mobile devices. Furthermore, as can be seen from the foregoing description, the data related to the test software does not need to be reused in the secondary production process of the intelligent module. Therefore, in this embodiment, after the test data is obtained, the test data can be erased from the second memory partition, thereby further saving the storage capacity of the storage medium.

In a possible implementation manner of the first aspect, before the configuring the storage density of the first storage partition in the storage medium to the first storage density and the configuring the storage density of the second storage partition to the second storage density, the method further includes: acquiring target capacity, wherein the target capacity represents the size of a storage space occupied by the target data; and determining the capacity of the first storage partition according to the target capacity, wherein the capacity of the first storage partition is larger than or equal to the target capacity.

As can be seen from the foregoing description, the storage capacity of a low-density storage partition is generally small, which is achieved by sacrificing capacity in exchange for the security of the data stored therein. The storage capacity of the low-density storage partition is reasonably designed, the reduction range of the storage capacity of the storage medium can be reduced as far as possible, and the key data can be effectively protected. Therefore, in the present embodiment, the storage capacity of the storage medium can be further secured by determining the capacity of the first storage partition by calculating the size of the storage space that needs to be occupied by the target data.

In a second aspect, the present application provides a storage apparatus, the apparatus comprising: a configuration unit, configured to configure a storage density of a first storage partition in the storage medium to a first storage density, and configure a storage density of a second storage partition to a second storage density, the first storage density being smaller than the second storage density; the first storage partition and the second storage partition are two independent partitions in the storage medium, and the stability of the data in the first storage partition under the high-temperature environment is better than that of the data in the second storage partition under the high-temperature environment; and the storage unit is used for storing target data into the first storage partition, and the target data is used for maintaining the performance of the intelligent module.

In one possible embodiment of the second aspect, a ratio of the capacity of the first storage partition to the total capacity of the storage medium is smaller than a first threshold.

In a possible implementation manner of the second aspect, the storage density of the first storage partition is 1 bit/storage unit, and the storage density of the second storage partition is 3 bit/storage unit; or the storage density of the first storage partition is 1 bit/storage unit, and the storage density of the second storage partition is 2 bit/storage unit; or the storage density of the first storage partition is 2 bits/storage unit, and the storage density of the second storage partition is 3 bits/storage unit.

In a possible embodiment of the second aspect, the apparatus is applied to an intelligent module applied to a mobile device, and the target data includes at least one of a performance calibration parameter of the mobile device and an international mobile equipment identity of the mobile device.

In a possible embodiment of the second aspect, the apparatus further includes a test unit, and the storage unit is further configured to store test software into the second memory partition; the test unit is used for testing the performance of the intelligent module based on the test software to obtain test data.

In a possible embodiment of the second aspect, the apparatus further comprises an erasing unit configured to erase the test data from the second memory partition.

In a possible implementation manner of the second aspect, the apparatus further includes an obtaining unit and a determining unit, where the obtaining unit is configured to obtain a target capacity, and the target capacity represents a size of a storage space occupied by the target data; the determining unit is used for determining the capacity of the first storage partition according to the target capacity, and the capacity of the first storage partition is larger than or equal to the target capacity.

In a third aspect, the present application provides an electronic device, where the device includes a processor, a memory, and a communication interface, where the processor, the memory, and the communication interface are connected to each other, where the communication interface is configured to receive and transmit data, the memory is configured to store program codes, and the processor is configured to call the program codes to perform a method according to the first aspect and any possible implementation manner of the first aspect.

In a fourth aspect, the present application provides a computer-readable storage medium storing a computer program for execution by a processor to perform the method as in the first aspect and any possible implementation manner of the first aspect.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments or the background art of the present application, the drawings used in the embodiments or the background art of the present application will be briefly described below.

Fig. 1A is a schematic diagram of a TLC type storage unit provided in the present application;

fig. 1B is a schematic diagram illustrating a process of voltage status and data change of a TLC type memory cell according to an embodiment of the present application;

fig. 2 is a flowchart of a storage method according to an embodiment of the present disclosure;

FIG. 3A is a diagram of an SLC memory cell according to an embodiment of the present application;

FIG. 3B is a schematic diagram illustrating the voltage state and data change of an SLC memory cell according to an embodiment of the present invention;

fig. 4 is a schematic structural diagram of a memory device according to an embodiment of the present disclosure;

fig. 5 is a schematic structural diagram of an electronic device according to an embodiment of the present application.

Detailed Description

In order to make the objects, technical solutions and advantages of the present application more clear, the present application will be further described with reference to the accompanying drawings.

The terms "first" and "second," and the like in the description, claims, and drawings of the present application are used solely to distinguish between different objects and not to describe a particular order. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion. Such as a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements listed, but may alternatively include other steps or elements not listed, or inherent to such process, method, article, or apparatus.

Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those skilled in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.

In this application, "at least one" means one or more, "a plurality" means two or more, "at least two" means two or three and three or more, "and/or" for describing an association relationship of associated objects, which means that there may be three relationships, for example, "a and/or B" may mean: only A, only B and both A and B are present, wherein A and B may be singular or plural. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship. "at least one item(s) below" or similar expressions refer to any combination of these items. For example, at least one (one) of a, b, or c, may represent: a, b, c, "a and b," a and c, "" b and c, "or" a and b and c.

In order to describe the scheme of the present invention more clearly, some knowledge related to the storage method, apparatus, device and storage medium provided in the embodiments of the present application is introduced below.

(1) Storage density

The storage density refers to the number of bit data stored in each unit storing data (for example, floating Gate inside MOSFET) belonging to a Non-volatile Memory Device (Non-volatile Memory Device).

Non-volatile memory devices can be classified into three types according to memory density, i.e., SLC (Single Level Cell), MLC (Multi-Level Cell), TLC (Tripple Level Cell). Wherein, SLC represents that 1 memory storage unit can store 1bit data, and only two charging values of 0 and 1 exist; MLC represents that 1 memory storage unit can store 2 bits of data, and 4 values represented by 00, 01, 10 and 11 exist; TLC indicates that 1 memory cell can hold 3 bits of data, and there are 8 charge values indicated by 000, 001, 010, 011, 100, 101, 110, 111.

The storage media with higher storage density have larger storage capacity, but have shorter service life, and have poorer reliability and data security.

(2) Storage principle of NAND flash memory

The NAND memory stores data through an insulating layer according to a physical structure of the NAND flash memory. When data is to be written, a voltage is applied and an electric field is formed so that electrons can enter the memory cell through the insulator, thereby completing writing of data. If the memory cell (data) is to be erased, a voltage is applied again to allow electrons to pass through the insulating layer and leave the memory cell. Therefore, the NAND flash memory must erase the original data before rewriting the new data.

Since 1 memory cell of TLC can store 3 bits of data, different voltages must be used for differentiation. In addition to the realization of the same results as SLC, 000 (TLC) =0 (SLC) and 111 (TLC) =1 (SLC), six other data formats must be distinguished by using different voltages to allow different numbers of electrons to enter the memory cell, so as to realize different data expressions. Thus, the purpose of storing more data in the unit memory cell than the SLC and MLC can be realized by TLC. Since eight different voltage states are required for data writing into the TLC, the application of different voltage states, in particular relatively high voltages, takes longer to achieve (a process of increasing voltage, which is not completed until a suitable voltage value is found). Therefore, the required access time for data is longer in TLC, and thus the transmission speed is slower. And since eight different voltage states are required to represent eight different data values in the TLC, the range of each voltage state in the TLC also needs to be set to be relatively small, so that when the charge is unstable, the data stored in the TLC is easily damaged due to the change of the voltage state.

Electronic devices such as mobile phones and POS devices generally have their own motherboard. When a motherboard is manufactured, a production provider stores critical data such as calibration parameters, IMEI, etc. in a storage medium in the motherboard. Later, when a downstream manufacturer uses the motherboards for two times of production, the motherboards are often required to be subjected to surface mounting again, and then specific test software is stored in a storage medium of the motherboards according to product types to test and deliver the finally molded products.

It should be understood that critical data such as calibration parameters, IMEI, etc. need to be stored in the motherboard all the time to ensure that the motherboard can function properly in the subsequent electronic products. However, the storage density of the large-capacity storage medium used in the current motherboard is high, and the data storage capability of the storage medium at high temperature is poor, and when a downstream manufacturer carries out surface mounting on the motherboard, the high-temperature environment generated during the surface mounting may cause the key data originally stored in the motherboard to be damaged.

Fig. 1A is a schematic diagram of a TLC type storage unit provided in the application embodiment. As shown in fig. 1A, the memory cell 10 is a memory cell in a NAND flash memory, which is configured as a TLC type memory cell. As is clear from the above description, the memory unit 10 stores 3 bits of data. The bit 10A is data of 1bit contained in the 3-bit data, and the corresponding bit value may be 0 or 1. It is inferred that the data that the memory unit 10 may store can be represented by any one of 8 values of 000, 001, 010, 011, 100, 101, 110, 111.

According to the physical structure of the NAND flash memory, in order to distinguish the above 8 values, it is necessary to write the corresponding values into the memory cell 10 using 8 voltages of different ranges. It is to be understood that the value of each bit in the memory cell 10 is determined by how much charge the MOS floating gate stores. In order to ensure the writing speed of data, the threshold between the lowest voltage state and the highest voltage state is usually small, and as the charge amount needs to be divided into more levels, the section length (or voltage difference) corresponding to each voltage range needs to be set smaller. For example, as shown in fig. 1A, assuming that the lowest writing voltage state of the memory cell 10 is 1.50V and the highest writing voltage state is 2.30V, the difference between them is 0.8V, and the threshold of 0.8V is divided into 8 different voltage ranges, and it can be known that the interval length of each range is 0.1V. Then the bit value corresponding to the voltage range of 1.50V-1.60V can be set to 000, the bit value corresponding to the voltage range of 1.60V-1.70V can be set to 001, the bit value corresponding to the voltage range of 1.70V-1.80V can be set to 010, \ 8230 \\ 8230, and so on. It is easy to calculate that the interval length of each voltage range is very small, and is only 0.1V.

When a downstream manufacturer carries out surface mounting on the mainboard, electrons in the storage unit can easily run out of the floating gate of the MOS to be limited by the high-temperature environment generated in the surface mounting process, so that the stored charges of the MOS floating gate are changed, and the voltage state is also changed. When the voltage state changes, the value of each bit in the memory cell 10 changes, and the content of the stored data changes. As shown in fig. 1B, assuming that the voltage value of the charge originally stored in the MOS floating gate of the memory cell 10 is 1.55V, the data (i.e., the bit value of the three-bit data) stored in the memory cell is 000 in correspondence to each voltage range described above. If the electronic activity in the memory cell 10 is increased due to the high temperature environment, and the charge stored in the MOS floating gate is further changed, and the voltage state is changed to 1.65V, it can be seen from the voltage ranges described above, and at this time, the data stored in the memory cell (i.e., the bit value of the three-bit data) is changed from 000 to 001, and the data originally stored in the memory cell 10 is destroyed. If the storage unit 10 stores critical data such as calibration parameters, international mobile equipment identity codes, etc., then the storage medium in which the storage unit 10 is located may not provide normal use functions and function properly when the storage medium is manufactured to obtain a specific mobile equipment.

In view of the foregoing drawbacks, an embodiment of the present application provides a storage method. According to the method, by configuring part of the storage partitions in the storage medium into the storage partitions with low storage density and storing the key data in the storage partitions with low storage density, the stability of the storage partitions with low storage density in a high-temperature environment is utilized, so that the key data can be prevented from being damaged in the surface mounting process of the intelligent module where the storage medium is located by a user, and the data safety is improved. As shown in fig. 2, the method may include the steps of:

201. the storage density of a first storage partition in the storage medium is configured to a first storage density and the storage density of a second storage partition is configured to a second storage density, the first storage density being less than the second storage density.

The electronic device configures a storage density of a first storage partition in the storage medium to a first storage density and configures a storage density of a second storage partition in the storage medium to a second storage density, the first storage density being less than the second storage density. The first storage partition and the second storage partition are two independent partitions in the storage medium, and the stability of the data in the first storage partition under the high-temperature environment is better than the stability of the data in the second storage partition under the high-temperature environment.

Specifically, the electronic device may be a mobile phone (mobile phone), a tablet computer (pad), a computer with a data transceiving function (such as a notebook computer, a palm computer, etc.), a Mobile Internet Device (MID), a terminal in industrial control (industrial control), a terminal in a 5G network, or a terminal in a Public Land Mobile Network (PLMN) for future evolution, etc.; it is understood that the present application is not limited to the specific form of the electronic device.

The storage medium may be a large-capacity flash memory chip such as an embedded multimedia card or a universal flash memory, and the storage medium is disposed or integrated in the smart module. Specifically, the smart module may be a motherboard in a mobile device such as a mobile phone or a POS device, and a manufacturer may perform secondary assembly and production based on the smart module to obtain the mobile device such as the mobile phone or the POS device.

Flash memory chips can be classified into three types according to memory density, i.e., SLC, TLC and MLC as mentioned in the foregoing description. Wherein, SLC represents that 1 memory storage unit can store 1bit of data, MLC represents that 1 memory storage unit can store 2bit of data, TLC represents that 1 memory storage unit can store 3bit of data. As can be seen from the above description, the smaller the storage density of the storage partition is, the smaller the storage capacity is, but the data stability and security are higher.

The description will be made by taking fig. 3A and 3B as an example. FIG. 3A is a schematic diagram of an SLC memory cell according to an embodiment of the present application. As shown in fig. 3A, the memory cell 30 is a memory cell in a NAND flash memory, which is configured as an SLC type memory cell. As can be seen from the above description, only 1bit of data is stored in the storage unit 30. The bit 10A is data of 1bit contained in the 3-bit data, and the corresponding bit value may be 0 or 1. It is inferred that the data that the storage unit 30 may store can only be represented as 0 or 1.

In order to distinguish the above 2 values according to the physical structure of the NAND flash memory, it is necessary to write the corresponding values into the memory cell 30 using 2 voltages of different ranges. For comparison with the memory cell 10 in fig. 1A, if the lowest write voltage state of the memory cell 30 is 1.50V and the highest write voltage state is 2.30V, the difference between them is 0.8V, and the threshold of 0.8V is divided into 2 different voltage ranges, so that the interval length of each range is 0.4V. Then the bit value for the voltage range of 1.50V-1.90V may be set to 0 and the bit value for the voltage range of 1.90V-2.30V may be set to 1. It is easy to calculate that the interval length of each voltage range is relatively large and has 0.4V.

Therefore, only when the voltage variation is large, the value of each bit in the memory cell 30 will change accordingly, and the stored data content will be destroyed in nordic. As shown in fig. 3B, assuming that the voltage value generated by the charges stored in the MOS floating gate of the memory cell 30 is 1.55V, the data 0 stored in the memory cell is known in correspondence with each voltage range described above. If the electronic activity in the memory cell 30 is increased due to the high temperature environment, and the charge stored in the MOS floating gate is further changed, and the voltage state is changed to 1.65V, it can be seen from the above description that the data stored in the memory cell is still 0, and the data originally stored in the memory cell 30 is not destroyed.

It can be inferred from the foregoing description that the smaller the storage density, the smaller the storage capacity of the storage partition, but the stability and the security of the data in the high-temperature environment are higher. Therefore, in an optional embodiment, therefore, the storage density of the first storage partition may be 1 bit/storage unit, and the storage density of the second storage partition may be 3 bit/storage unit; or, the storage density of the first storage partition may be 1 bit/storage unit, and the storage density of the second storage partition may be 2 bit/storage unit; or the storage density of the first storage partition can be 2 bits/storage unit, and the storage density of the second storage partition can be 3 bits/storage unit. The storage density of the two partitions may be determined specifically according to the storage density of the second storage partition and the comprehensive requirements on capacity and data security, which is not limited in the present application, and only the first storage partition needs to be configured as a storage partition with a lower storage density than the second storage partition.

202. And storing the target data into the first storage partition.

And the electronic equipment stores the target data into the first storage partition.

The target data includes at least one of a performance calibration parameter of the mobile device and an international mobile equipment identity of the mobile device. Specifically, the calibration parameters may include a radio frequency calibration parameter, a power calibration parameter, and a sensitivity calibration parameter, and these parameters are used to maintain the performance of the intelligent module in the aspects of radio frequency, power, communication, and the like. The IMEI is an international mobile equipment identity code, is a 'file' and an 'identity card number' of the intelligent module in a manufacturer, and can be used for identifying the mobile equipment.

It should be understood that, during the production process of the intelligent module, the supplier stores the key data (i.e. the target data) such as the calibration parameters, the international mobile equipment identity code, etc. in the storage medium. The calibration parameters may include radio frequency calibration parameters, power calibration parameters, and sensitivity calibration parameters. When the mobile device is obtained by using the intelligent module, because the mobile device includes a plurality of devices and there are differences between the devices, the mobile device needs to be calibrated by using the calibration parameters during production, so as to ensure that the intelligent module and the mobile device can normally perform the functions provided by the mobile device, and the parameters can be used for maintaining the performance of the mobile device in the aspects of radio frequency, power, communication and the like during the use process of a user. The international mobile equipment identity code consists of four parts, namely a model approval number, a final assembly number, a serial number and a check code, and can be read and written in a memory (namely the storage medium). It is "archives" and "identification card number" of above-mentioned intelligent module in the producer, can be used for discerning above-mentioned mobile device, marks the global uniqueness of this equipment. In addition, the IMEI can be identified by the signal transmission tower, which can help the security agency locate the location of the mobile phone and its user, and also help to find the store information for selling the mobile device. Therefore, the target data needs to be stored stably in the storage medium at all times and cannot be destroyed. Therefore, the data are stored in the first storage partition, and the safety of the data in the subsequent secondary patching process can be improved.

In one possible embodiment, a ratio of the capacity of the first storage partition to the total capacity of the storage medium is smaller than a first threshold. It should be appreciated that the storage capacity of a low density storage partition is generally small, which is precisely the trade-off of capacity for data security stored therein. However, if most of the storage partitions in the storage medium are configured as low-density storage partitions, the storage capacity of the storage medium is greatly reduced. In addition, some data in the storage medium is not critical data, and the security of the data does not need to be considered too much. Therefore, in this embodiment, only a small part of the storage partitions in the storage medium may be configured as a storage partition with a low storage density, and the total capacity of the part of the storage partitions is less than the total capacity of the storage medium, for example, one percent or one thousandth. For example, in a storage medium with a total capacity of several tens to hundreds GB, a part of the storage partitions may be configured as SLC partitions, and assuming that the total capacity of the configured SLC partitions is 100MB, although originally, the storage partitions may be configured as TLC partitions, the total capacity may be increased by 200MB, but considering data security and storage capacity comprehensively, this embodiment may still configure the part of the storage partitions as SLC partitions, and although the storage capacity of 200MB needs to be sacrificed, the storage capacity of the storage medium may be substantially ignored with respect to a device with a total capacity of several tens to hundreds GB, and the storage capacity of the storage medium may not be greatly reduced, and key data may be effectively protected.

It should be understood that after the intelligent module is produced, the manufacturer needs to test the intelligent module, and therefore needs to download a set of test software in the intelligent module. The test software is required to be downloaded and installed in the storage medium, however, the test software is only used for testing the intelligent module, and unlike the calibration parameters and the IMEI, the relevant data of the test software is not required to be reused in the secondary production process of the intelligent module. Therefore, in a possible implementation, after configuring the storage density of the second memory partition to be the second storage density, the electronic device may further store the test software into the second memory partition; the testing software tests the performance of the intelligent module to obtain testing data. Thus, the first memory partition has more capacity to store critical data such as calibration parameters and IMEI that need to be used in subsequent processes.

Further, after obtaining the test data, the electronic device may erase the test data from the second memory partition. As can be seen from the foregoing description, after the smart module is secondarily produced to obtain a mobile device such as a mobile phone and a POS, a downstream manufacturer often needs to download another set of test software to test the produced mobile device. In addition, as can be seen from the above description, the data related to the test software does not need to be reused in the secondary production process of the intelligent module. Therefore, after the test data is obtained, the test data can be erased from the second memory partition, thereby further saving the storage capacity of the storage medium.

It is to be appreciated that the storage capacity of low density storage partitions is generally small, by sacrificing capacity in exchange for the security of the data stored therein. The storage capacity of the low-density storage partition is reasonably designed, the reduction range of the storage capacity of the storage medium can be reduced as far as possible, and the key data can be effectively protected. Therefore, in a possible implementation manner, the electronic device may further obtain a size of a storage space occupied by the target data, and determine the capacity of the first storage partition according to the size of the storage space occupied by the target data. Specifically, the capacity of the first memory partition is greater than or equal to the target capacity. The capacity of the first storage partition is reasonably planned by calculating the size of the storage space occupied by the target data, so that the storage capacity of the storage medium can be further ensured.

A schematic structural diagram of a positioning device provided in an embodiment of the present application is described below, please refer to fig. 4. As shown in fig. 4, the storage apparatus in fig. 4 may execute the flow of the storage method in fig. 2, and the apparatus includes:

a configuration unit 401, configured to configure a storage density of a first storage partition in a storage medium to a first storage density and configure a storage density of a second storage partition in the storage medium to a second storage density, where the first storage density is smaller than the second storage density; the first memory partition and the second memory partition are two independent partitions in the storage medium, and the stability of the data in the first memory partition in a high temperature environment is better than the stability of the data in the second memory partition in the high temperature environment; a storage unit 402, configured to store target data into the first storage partition, where the target data is data used for performing performance maintenance on the intelligent module.

In one possible embodiment, a ratio of the capacity of the first storage partition to the total capacity of the storage medium is smaller than a first threshold.

In a possible embodiment, the storage density of the first storage partition is 1 bit/storage unit, and the storage density of the second storage partition is 3 bit/storage unit; or, the storage density of the first storage partition is 1 bit/storage unit, and the storage density of the second storage partition is 2 bit/storage unit; or the storage density of the first storage partition is 2 bits/storage unit, and the storage density of the second storage partition is 3 bits/storage unit.

In a possible embodiment, the apparatus is applied to an intelligent module, the intelligent module is applied to a mobile device, and the target data includes at least one of a performance calibration parameter of the mobile device and an international mobile equipment identity of the mobile device.

In a possible embodiment, the apparatus further includes a testing unit 403, and the storing unit 402 is further configured to store the testing software into the second memory partition; the test unit 403 is configured to test the performance of the intelligent module based on the test software, so as to obtain test data.

In a possible implementation manner, the apparatus further includes an erasing unit 404, configured to erase the test data from the second memory partition.

In a possible implementation manner, the apparatus further includes an obtaining unit 405 and a determining unit 406, where the obtaining unit 405 is configured to obtain a target capacity, and the target capacity represents a size of a storage space occupied by the target data; the determining unit 406 is configured to determine the capacity of the first memory partition according to the target capacity, where the capacity of the first memory partition is greater than or equal to the target capacity.

It should be understood that the above division of the units of the positioning device is only a division of logical functions, and the actual implementation may be wholly or partially integrated into one physical entity, or may be physically separated. For example, the above units may be processing elements which are set up separately, or may be implemented by integrating the same chip, or may be stored in a storage unit of the controller in the form of program codes, and a certain processing element of the processor calls and executes the functions of the above units. In addition, the units can be integrated together or can be independently realized. The processing element may be an integrated circuit chip having signal processing capabilities. In implementation, the steps of the method or the units above may be implemented by integrated logic circuits of hardware or instructions in the form of software in a processor element. The processing element may be a general purpose processor, such as a CPU, or one or more integrated circuits configured to implement the above method, such as: one or more application-specific integrated circuits (ASICs), or one or more microprocessors (DSPs), or one or more field-programmable gate arrays (FPGAs), among others.

Fig. 5 is a schematic structural diagram of an electronic device according to an embodiment of the present application. As shown in fig. 5, the electronics 50 include a processor 501, a memory 502, and a communication interface 503; the processor 501, the memory 502, and the communication interface 503 are connected to each other by a bus 504. Specifically, the electronic device 50 may be the electronic device in the foregoing description.

The memory 502 includes, but is not limited to, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM), or a compact read-only memory (CDROM), and the memory 702 is used for related instructions and data. The communication interface 503 is used to receive and transmit data. In particular, the communication interface 503 may implement the functionality of the acquisition unit 405 in fig. 4.

The processor 501 may be one or more Central Processing Units (CPUs), and in the case that the processor 501 is one CPU, the CPU may be a single-core CPU or a multi-core CPU. In particular, the processor 501 may implement the functions of the configuration unit 401, the logging unit 402, the testing unit 403, the erasing unit 404, and the determining unit 406 in fig. 4.

In an embodiment of the present application, there is provided another computer-readable storage medium storing a computer program which, when executed by a processor, implements: configuring a storage density of a first storage partition in a storage medium to a first storage density and a storage density of a second storage partition in the storage medium to a second storage density, the first storage density being less than the second storage density; the first memory partition and the second memory partition are two independent partitions in the storage medium, and the stability of the data in the first memory partition in a high-temperature environment is better than the stability of the data in the second memory partition in the high-temperature environment; and storing target data into the first storage partition, wherein the target data is used for performing performance maintenance on the intelligent module.

The embodiment of the present application further provides a computer program product containing instructions, which when run on a computer, causes the computer to execute the storage method provided by the foregoing embodiment.

As will be appreciated by one skilled in the art, embodiments of the present invention may provide a method, apparatus, or computer program product. Accordingly, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.

The present invention is described in terms of flowcharts and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.

These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.

These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.

While the invention has been described with reference to specific embodiments, the scope of the invention is not limited thereto, and those skilled in the art can easily conceive various equivalent modifications or substitutions within the technical scope of the invention. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A storage method is applied to an intelligent module and is characterized by comprising the following steps:

configuring a storage density of a first storage partition in a storage medium to a first storage density and a storage density of a second storage partition to a second storage density, the first storage density being less than the second storage density; the first storage partition and the second storage partition are two independent partitions in the storage medium, and the stability of the data in the first storage partition under the high-temperature environment is better than that of the data in the second storage partition under the high-temperature environment;

and storing target data into the first storage partition, wherein the target data is used for performing performance maintenance on the intelligent module.

2. The method of claim 1, wherein a ratio of the capacity of the first storage partition to the total capacity of the storage medium is less than a first threshold.

3. The method according to claim 1 or 2,

the storage density of the first storage partition is 1 bit/storage unit, and the storage density of the second storage partition is 3 bit/storage unit; or the storage density of the first storage partition is 1 bit/storage unit, and the storage density of the second storage partition is 2 bit/storage unit; or the storage density of the first storage partition is 2 bits/storage unit, and the storage density of the second storage partition is 3 bits/storage unit.

4. The method according to claim 1 or 2, wherein the smart module is applied to a mobile device, and the target data comprises at least one of a performance calibration parameter of the mobile device and an international mobile equipment identity of the mobile device.

5. The method of claim 4, wherein after said configuring the storage density of the second storage partition to a second storage density, the method further comprises:

storing test software into the second memory partition;

and testing the performance of the intelligent module based on the test software to obtain test data.

6. The method of claim 5, wherein after said obtaining test data, said method further comprises:

erasing the test data from the second memory partition.

7. The method of claim 1 or 2, wherein prior to configuring the storage density of the first storage partition in the storage medium to the first storage density and the storage density of the second storage partition to the second storage density, the method further comprises:

acquiring target capacity, wherein the target capacity represents the size of a storage space occupied by the target data;

and determining the capacity of the first storage partition according to the target capacity, wherein the capacity of the first storage partition is larger than or equal to the target capacity.

8. A memory device, comprising:

a configuration unit, configured to configure a storage density of a first storage partition in the storage medium to a first storage density, and configure a storage density of a second storage partition to a second storage density, the first storage density being smaller than the second storage density; the first storage partition and the second storage partition are two independent partitions in the storage medium, and the stability of the data in the first storage partition under the high-temperature environment is better than that of the data in the second storage partition under the high-temperature environment;

and the storage unit is used for storing target data into the first storage partition, and the target data is used for maintaining the performance of the intelligent module.

9. An electronic device comprising a processor, a memory and a communication interface, the processor, the memory and the communication interface being interconnected, wherein the communication interface is configured to receive and transmit data, the memory is configured to store program code, and the processor is configured to invoke the program code to perform the method of any of claims 1 to 7.

10. A computer-readable storage medium, characterized in that the computer-readable storage medium stores a computer program which is executed by a processor to implement the method of any one of claims 1 to 7.