CN115810680B - Local field enhanced photoconductive high-speed photoelectric detector - Google Patents
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Abstract
The invention discloses a high-speed photoelectric detector with a novel photoconductive structure based on surface plasmon enhancement and a preparation method thereof, wherein the device structure comprises the following components from bottom to top: a substrate disposed at the bottom; a lower metal electrode disposed over the substrate; the semiconductor material layer is arranged above the lower metal electrode and is used for generating photogenerated carriers and transporting photogenerated current to the electrodes at the two sides under the action of an externally applied electric field; a double-layer metal grating electrode arranged above the semiconductor material layer, comprising a lower-layer metal grating electrode and an upper-layer metal grating electrode; the double-layer metal grating electrode is electrically connected through the outer annular electrode; the double-layer metal grating electrode and the lower metal electrode respectively form an anode and a cathode of the detector and are used for externally biasing the detector. The invention provides a photoconductive high-speed photoelectric detector based on surface plasmon enhancement, which solves the problems of low response speed and low conversion efficiency of the traditional optical detector.
Description
Technical Field
The invention belongs to the technical field of semiconductor photoelectric devices, and mainly relates to a high-speed photoelectric detector and a preparation method thereof.
Background
High-speed photodetectors are critical devices for high-speed optoelectronic systems. For example, at the receiving end of the optical fiber communication system, the photodetector can convert the modulated optical signal into an electrical signal, which is a core device of the receiving end; in signal generation, a high frequency electrical signal output is obtained by beating a light beam on a photodetector.
The high-speed photodetectors reported so far are mainly Avalanche Photodetectors (APD), PIN photodetectors, and single-row carrier photodetectors (UTC-PD). APD is widely used in the fields of long-distance optical communication receiver, single photon detection, etc., but has poor high-speed performance due to long avalanche setup time; the PIN-PD has low hole mobility, so that the transit time of holes from the intrinsic layer to the P-type layer limits the bandwidth of the PIN-PD to be difficult to further improve; the response speed of the detector is difficult to increase due to the limitation of junction capacitance.
The photoconductive detector can respond to signals of terahertz frequency, and has the advantage of high speed. However, the semiconductor material has low light absorption efficiency and low photoelectric conversion efficiency, which are critical problems restricting the application.
The surface plasmon is a collective oscillation phenomenon of electrons on the surface of the metal structure induced by an external electromagnetic field, can break through diffraction limit restriction, and enhances interaction between light and a substance under the micro-nano scale. In recent years, with the development of micro-nano technology, micro-nano scale optical field control structures based on surface plasmons are continuously proposed. Through reasonable structural design, the surface plasmon structure can be used for local light field, and the light absorption of the semiconductor material is improved, so that the responsivity of the photoelectric detector is improved (chem. Soc. Rev.2021,50 (21): 12070-12097).
Disclosure of Invention
The invention mainly aims to provide a photoconductive novel-structure high-speed photoelectric detector based on surface plasmon enhancement, so as to solve the problems of low response speed and low conversion efficiency of the traditional photoelectric detector.
The design of the invention is mainly focused on the structure of the light absorption and carrier transport part of one of the important components of the detector.
The invention provides a vertical photoconductive high-speed detector structure, which comprises the following components from bottom to top:
a substrate arranged at the bottom, wherein the substrate can be one or a combination of a plurality of metal or semiconductor materials with higher heat conductivity such as Si, cu, SOI, ni, gaAs, inP and the like;
the lower metal electrode is arranged above the substrate and is used as a lower electrode of the electrode with the vertical structure, and further, the electrode material can be one or more of metal or metal oxide materials with high conductivity such as Au, ag, pt, ni, cr, ti, ge, cu and the like;
the semiconductor material layer is positioned above the lower metal electrode, and is used for generating photogenerated carriers and transporting photogenerated current to the electrodes at the two sides under the action of an externally applied electric field; optionally, the semiconductor material layer includes a lower semiconductor layer and an upper semiconductor grating, and further, the material of the semiconductor material layer may be an alloy of one or more of GaAs, alAs, inAs, inGaAs, alGaAs, inGaAsP and the like;
the double-layer metal grating electrode comprises a lower-layer metal grating electrode and an upper-layer metal grating electrode.
The lower metal grating electrode is positioned above the semiconductor material layer and between the upper semiconductor gratings;
the upper metal grating electrode is positioned at the top of the upper semiconductor grating structure;
the double-layer metal grating electrode and the semiconductor material layer form ohmic contact, when electromagnetic waves interact with a micro-nano-sized metal structure (comprising nano-sized particles, micro-structures and the like, and the double-layer metal grating electrode is used for the moment), electrons and electromagnetic fields are coupled to generate resonance effects, namely surface plasmon effects, which can generate strong absorption on incident light, and meanwhile, a strong electric field is generated inside an upper semiconductor grating between the double-layer metal grating electrodes.
The double-layer metal grating electrode is electrically connected through the outer annular electrode;
the double-layer metal grating electrode and the lower metal electrode respectively form an anode and a cathode of the detector and are used for externally biasing the detector;
the double-layer metal grating electrode and the lower metal electrode form a vertical structure electrode, and compared with electrodes arranged on the same side of a semiconductor, the vertical arrangement enables an electric field formed by external bias to be more uniformly distributed, and photon-generated carrier transportation can be shortened from a few micrometers to hundred nanometers, so that carrier transportation efficiency is improved;
the double-layer metal grating electrode and the lower metal electrode form an F-P resonant cavity, the cavity length is regulated and controlled according to the resonant cavity principle, the absorption of electromagnetic waves of a certain wave band in a semiconductor material layer can be enhanced, but the absorption is limited by the difficulty in precisely controlling the cavity length in a process. Therefore, the carrier transport efficiency can be improved while the light continuous receiving efficiency can be improved.
Optionally, the detector also comprises an anti-reflection layer, wherein the anti-reflection layer is positioned on the upper surface of the detector and is used for increasing the transmission of incident light; the anti-reflection layer material can be TiO 2 、SiN x 、SiO 2 Dielectric materials such as ITO and IZO which do not absorb incident light;
when the pumping light is incident to the surface of the detector, the anti-reflection layer can increase the light transmission, the double-layer metal grating electrode is optically coupled with the lower metal electrode, the local electric field intensity can be obviously enhanced, and the optical absorption of the semiconductor material layer is shown in fig. 4, wherein the wavelength of the incident light is 1550 nanometers as an example, the structural dimension can reach 80 percent through the design, and meanwhile, the absorption between 1500 nanometers and 1600 nanometers is kept above 60 percent.
The innovation point 1 of the structure is that the surface plasmon effect and the F-P resonant cavity are combined, the local field enhancement effect of the surface plasmon effect and the resonance enhancement effect of the F-P resonant cavity are coupled, stable and efficient light absorption efficiency can be achieved, and meanwhile, the field enhancement effect acts on an electric field between metal electrodes, so that the transport of carriers is further enhanced. The innovation point 2 is to provide a photoconductive detector with a vertical structure micro-nano electrode and a working principle thereof, wherein a double-layer metal grating electrode is used as an upper electrode, a lower metal electrode is used as a lower electrode, light absorption is increased, and meanwhile, current distribution uniformity is improved.
According to an embodiment of the invention, a preparation method of a photoconductive high-speed detector based on surface plasmons is provided, which comprises the following steps:
step one: growing an epitaxial layer on a temporary substrate by adopting a metal organic chemical vapor deposition or molecular beam epitaxy method, wherein the material of the epitaxial layer can be one or more of GaAs, alAs, inAs, inGaAs, alGaAs, inGaAsP and the like, forming a first metal layer on the epitaxial layer, and the thickness of the first metal layer is 100-400 nanometers, wherein the material of the first metal layer can be one or more of Au, ag, pt, ni, cr, ti, ge, cu and the like and is used for forming ohmic contact with the epitaxial layer, and an annealing process can be adopted for reducing the contact resistance of the first metal layer and the substrate by ohmic contact between the first metal layer and the substrate;
step two: photoetching and etching the structure to form a discrete structure, thereby obtaining a patterned semiconductor epitaxial layer on the temporary substrate, wherein the upper surface of the patterned semiconductor epitaxial layer is a patterned first metal layer;
step three: forming a patterned second metal layer on the final substrate, wherein the thickness of the second metal layer is 100-400 nanometers, and one or more materials such as Au, ag, pt, ni, cr, ti, ge, cu can be used as the material; the final substrate can be one or a combination of a plurality of metal or semiconductor materials with higher thermal conductivity such as Si, cu, SOI, ni, gaAs, inP and the like; optionally, forming an insulating layer on the final substrate; the area of the patterned second metal layer is larger than that of the first metal layer; optionally, the second metal layer is circular;
step four: bonding the patterned first metal layer and the patterned second metal layer together by alignment bonding, the bonded patterned first metal layer and second metal layer being used for the lower metal electrode 3 of the high-speed detector and simultaneously acting as a lower reflector of the FP cavity; etching to remove the temporary substrate, and transferring the patterned semiconductor epitaxial layer structure to a final substrate;
step five: optionally, a passivation protection layer is formed on the sidewall of the patterned semiconductor epitaxial layer structure, wherein the protection layer material can be SiO 2 、Al 2 O 3 Or Si (or) 3 N 4 Waiting for a failureA rim material;
step six: and forming a nano structure on the surface of the patterned semiconductor epitaxial layer. Wherein, optionally, the semiconductor nano structure is formed by utilizing focused ion beam etching; optionally, forming the semiconductor nanostructure by electron beam exposure in combination with etching; optionally, the semiconductor nanostructure is a one-dimensional semiconductor grating; optionally, the semiconductor nanostructure is a two-dimensional semiconductor grating;
step seven: evaporating metal vertically on the surface of the semiconductor nano structure to form a double-layer metal grating electrode, wherein the metal grating electrode material can be one or more of Au, ag, pt, ni, cr, ti, ge, cu and other materials;
step eight: and photoetching and evaporating metal to form a ring electrode which is in contact with the double-layer metal grating electrode to form electric connection, and simultaneously forming a coplanar waveguide electrode for subsequent packaging bonding wires. Optionally, photoetching and area electroplating are carried out to increase the thickness of the contact electrode; optionally, preparing an antireflection film, wherein the antireflection layer material can be TiO 2 、SiN x 、SiO 2 Dielectric materials such as ITO and IZO that do not absorb incident light.
The invention has the advantages that:
1. the invention provides a field local enhancement principle, and a high local field enhancement is formed by using mode coupling between a plasmon mode of a double-layer metal grating electrode and an F-P resonant cavity so as to improve the light absorption of a semiconductor material; meanwhile, the mode coupling between the plasmon mode of the double-layer metal grating electrode and the F-P resonant cavity reduces the sensitivity of the device to the thickness of the lower semiconductor layer and reduces the preparation difficulty of the device;
2. the invention provides a photoconductive detector structure capable of conducting electricity vertically, wherein a double-layer metal grating electrode above and a lower metal electrode form positive and negative electrodes of a vertical structure, and compared with electrodes arranged on the same side of a semiconductor, the vertical arrangement ensures that an electric field formed by external bias voltage is more uniformly distributed; the vertical structure enables carriers to be transported in the vertical direction, so that the transport distance of the carriers is greatly shortened, the transport efficiency of the carriers is improved, and the transport of photo-generated carriers can be shortened from a few micrometers to hundreds of nanometers, thereby improving the carrier transit time and further improving the response speed of the detector. The field local enhancement principle and the vertical conductive structure design of the invention improve the light absorption efficiency and the carrier transport efficiency at the same time, thereby improving the responsivity of the detector.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a schematic cut-away view of a photoconductive high-speed detector structure in accordance with an exemplary embodiment.
Fig. 2 is a schematic cross-sectional view of a unit structure in a photoconductive high-speed detector structure according to an exemplary embodiment.
Fig. 3 is a top view of a proposed photoconductive high-speed detector structure according to an exemplary embodiment.
Fig. 4 is a graph of optical power absorption of a semiconductor material layer of a cell structure in a photoconductive high-speed detector structure, in accordance with an exemplary embodiment.
Fig. 5 is a schematic view of the light reflectivity of a cell structure in a photoconductive high-speed detector structure according to an exemplary embodiment.
Fig. 6 is a schematic diagram of electric field enhancement of a cell structure in a photoconductive high-speed detector structure, in accordance with an exemplary embodiment.
Fig. 7 is a schematic view showing light absorption of unit structures in a photoconductive high-speed detector structure according to an exemplary embodiment in a wavelength band of 1200 nm to 2000 nm and different thicknesses of lower semiconductor layers.
The reference numerals in the figures are:
1: an antireflective layer of the photoconductive high-speed detector structure; 2: a lower semiconductor layer of the photoconductive high-speed detector structure; 3: a lower metal electrode of the photoconductive high-speed detector structure; 4: a substrate of the photoconductive high-speed detector structure; 5. 6: the double-layer metal grating electrode of the photoconductive high-speed detector structure is characterized in that 5 is an upper-layer metal grating electrode of the double-layer metal grating electrode, and 6 is a lower-layer metal grating electrode of the double-layer metal grating electrode; 7: the upper semiconductor grating of the photoconductive high-speed detector structure.
Detailed Description
For the purposes of promoting an understanding of the principles and advantages of the disclosure, reference will now be made to the embodiments illustrated in the drawings and specific language will be used to describe the same.
Certain embodiments of the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments are shown. Indeed, various embodiments of the disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements.
Fig. 1 is a schematic cut-away view of a photoconductive high-speed detector structure in accordance with an exemplary embodiment. Referring to fig. 1, an embodiment of the present invention provides a photoconductive high-speed detector structure including: the high-speed detector comprises an antireflection layer 1 of the photoconductive high-speed detector structure, a lower semiconductor layer 2 of the photoconductive high-speed detector structure, a lower metal electrode 3 of the photoconductive high-speed detector structure, a substrate 4 of the photoconductive high-speed detector structure, and double-layer metal grating electrodes 5 and 6 of the photoconductive high-speed detector structure. The anti-reflection layer 1 of the photoconductive high-speed detector structure is arranged on the double-layer metal grating electrodes 5 and 6 and is used for increasing the transmission of incident light and reducing reflection, the lower semiconductor layer 2 is arranged between the lower metal electrode 3 and the double-layer metal grating electrodes 5 and 6, the upper semiconductor grating 7 is arranged between the double-layer metal grating electrodes 5 and 6 and on the lower semiconductor layer 2, after the incident light is absorbed, photo-generated carriers are generated in the lower semiconductor layer 2 and the upper semiconductor grating 7, and the carriers drift under the action of an externally applied bias voltage so as to generate transient photocurrent. Fig. 2 is a schematic diagram of a unit structure in a photoconductive high-speed detector structure according to an exemplary embodiment. Fig. 4 is an optical power absorption graph of a substrate material in a cell structure of a photoconductive high-speed detector structure, proposed in accordance with an example embodiment. Fig. 5 is a graph of light reflectance in a cell structure of a photoconductive high-speed detector structure proposed in accordance with an example embodiment. Fig. 6 is a schematic diagram of the electric field enhancement inside the cell structure of the proposed photoconductive high-speed detector structure according to an exemplary embodiment. The photoconductive high-speed photodetector structure in the present disclosure is described with reference to fig. 1, 2, 3, 4, 5, 6 and 7.
According to the embodiment, the double-layer metal grating electrode structure based on the surface plasmon effect is combined with the F-P resonant cavities of the upper metal electrode and the lower metal electrode to design, so that the absorption of incident light and the enhancement of a local electric field are greatly improved, and the effect of improving the conversion efficiency of the detector is further achieved.
In this embodiment, indium gallium arsenide (InGaAs) and gallium arsenide (GaAs) are used as semiconductor materials, and according to the semiconductor theory, when photon energy injected into the semiconductor materials exceeds the forbidden band width, photo-generated carriers are generated, and drift movement is performed on the photo-generated carriers under the action of an externally applied bias voltage, so that high-speed photocurrent is formed. The semiconductor materials such as InGaAs and GaAs have the characteristics of good pressure resistance, high switching speed, high electron transfer rate, short service life of carriers and the like, and are used as the component parts of the photoconductive high-speed photoelectric detector, and the photoelectric detector has good stability and strong reliability.
In this embodiment, fig. 2 is a schematic diagram of a unit structure in a surface grating structure according to an exemplary embodiment.
Specifically, the response wavelength of the designed detector is around 1550 nm. The distance between two adjacent surface grating structures is a sub-wavelength scale, which may be a=200-800 nanometers, the substrate thickness b is generally greater than 50 micrometers, the lower electrode thickness may be c=100-400 nanometers, the thickness of the lower semiconductor layer may be d=200-2000 nanometers, the upper semiconductor grating height may be h1=80-300 nanometers, the width may be w=100-500 nanometers, the upper metal grating electrode height may be h2=20-100 nanometers, the lower metal grating electrode height may be p=20-100 nanometers, and the thickness of the antireflective layer may be g=250-650 nanometers.
Preferably, the semiconductor material is InGaAs, the electrode material is Au, the substrate material is Si, and the antireflection layer material is Si 3 N 4 A=450 nanometers, c=200 nanometers, d=400 nanometers, h1=100 nanometers, h2=50 nanometers, p=50 nanometers, g=300 nanometers, w=130 nanometers in the parameters, and simulation test wavelength selection lambda=1200-2000 nanometers.
Fig. 4 is an optical power absorption graph of a semiconductor material layer of a unit structure of a photoconductive type high-speed detector structure according to an exemplary embodiment. After the size of the unit structure and the wavelength of the incident light are determined, the light absorption of one unit structure of the photoconductive high-speed detector structure is simulated, the light absorption of the semiconductor material layer is shown as shown in fig. 4, the whole structure absorption is close to 100% near 1550 nanometer wave band, and the light absorption of the semiconductor material layer reaches about 80%, so that the device conversion efficiency can be greatly improved.
Fig. 5 is a schematic view of light reflectivity of a unit structure of a photoconductive type high-speed detector structure according to an exemplary embodiment. A monitor is arranged on the top of the structure to monitor the light reflectivity of the structure, the light reflection of the structure is about 5% smaller near 1550 nm band, most of light is limited in the structure, and the absorption of the detector to the incident light is greatly improved.
Fig. 6 is a schematic view of a tangential electric field enhancement of a unit structure of a photoconductive type high-speed detector structure according to an exemplary embodiment. In the structure, according to the surface plasmon theory, when light waves are incident on the interface between metal and dielectric medium, free electrons on the metal surface generate collective oscillation, near-field electromagnetic waves which are formed by coupling the free electrons on the metal surface and propagate along the metal surface generate resonance if the oscillation frequency of the electrons is consistent with the frequency of the incident light waves, the energy of the electromagnetic field is effectively converted into collective vibration energy of the free electrons on the metal surface in the resonance state, and the electromagnetic field is limited in a very small range of the metal surface and is enhanced. It can be seen from the figure that there is a significant electric field enhancement between the double layer metal grating electrodes.
Fig. 7 is a schematic view of light absorption between 1200 nm and 2000 nm wavelength bands of a unit structure of a photoconductive type high speed detector structure according to an exemplary embodiment under different thicknesses of a lower semiconductor layer. The F-P resonant cavity and the surface plasmon formed by the double-layer metal grating electrode are coupled, so that the light absorption of the structure can be concentrated near a specific wave band, the light absorption of the structure is basically concentrated near 1550 nanometer wave band, and after the thickness of the lower semiconductor layer reaches more than 200 nanometers, the influence of the thickness of the material on the light absorption efficiency of the structure is not obvious, and the sensitivity of the device structure to the thickness of the semiconductor material layer is obviously reduced.
After analysis of the light absorption curve graph, the section electric field enhancement schematic diagram and the light absorption schematic diagram of the structures with different semiconductor material layers, the designed structure can be seen from the results, so that the light absorption and the electric field enhancement effect are greatly improved, and the technical effect of improving the conversion efficiency of the detector is achieved.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure herein. This invention is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims. It is to be understood that the invention is not limited to the precise arrangements and instrumentalities shown in the drawings, which have been described above, and that various modifications and changes may be effected without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
Claims (5)
1. The preparation method of the photoconductive high-speed detector based on surface plasmon enhancement is characterized in that the photoconductive high-speed detector comprises the following steps:
the device comprises a substrate, a lower semiconductor layer, an anti-reflection layer, a lower metal electrode, a double-layer metal grating electrode and an upper semiconductor grating;
the lower semiconductor layer, the lower metal electrode, the double-layer metal grating electrode and the anti-reflection layer are arranged on the substrate, and the lower semiconductor layer is positioned between the lower metal electrode and the double-layer metal grating electrode;
the upper semiconductor grating is arranged between the lower semiconductor layer and the double-layer metal grating electrode;
the double-layer metal grating electrode and the lower metal electrode form an F-P type resonant cavity, and are coupled with a surface plasmon effect generated by the double-layer metal grating electrode to locally distribute fields in the semiconductor;
the preparation method of the photoconductive high-speed detector based on surface plasmon enhancement comprises the following process steps:
step one: growing an epitaxial layer on the temporary substrate by adopting a metal organic chemical vapor deposition or molecular beam epitaxy method; forming a first metal layer on the epitaxial layer, wherein the first metal layer is used for forming ohmic contact with the epitaxial layer;
step two: photoetching and etching the structure formed in the first step to form a discrete structure, so as to obtain a patterned semiconductor epitaxial layer on the temporary substrate, wherein the upper surface of the patterned semiconductor epitaxial layer is a patterned first metal layer;
step three: forming a patterned second metal layer on the final substrate, wherein the area of the patterned second metal layer is larger than that of the first metal layer; the shape of the patterned second metal layer is round;
step four: bonding the patterned first metal layer and the patterned second metal layer together by alignment bonding; etching to remove the temporary substrate, and transferring the patterned semiconductor epitaxial layer structure to a final substrate;
wherein the patterned first and second metal layers bonded together are used for the lower metal electrode of the high-speed detector while acting as the lower mirror of the FP cavity;
step five: forming a nano structure on the surface of the patterned semiconductor epitaxial layer; forming a semiconductor nano structure by utilizing focused ion beam etching; or forming a semiconductor nano structure by combining electron beam exposure and etching; the semiconductor nano structure is a one-dimensional semiconductor grating or a two-dimensional semiconductor grating;
step six: vertically evaporating metal on the surface of the semiconductor nano structure formed in the step five;
step seven: photoetching and evaporating metal to form a circular ring electrode which is in contact with the double-layer metal grating electrode to form electric connection; and forming a coplanar waveguide electrode for subsequent packaging bonding wires.
2. The method for preparing the photoconductive high-speed detector based on surface plasmon enhancement, as claimed in claim 1, wherein the method comprises the following steps:
the double-layer metal grating electrode forms ohmic contact with the lower semiconductor layer and the upper semiconductor grating, when the incident electromagnetic wave interacts with the double-layer metal grating electrode, a surface plasmon local field effect generated by metal generates an enhanced local electric field in the upper semiconductor grating, and the absorption efficiency of the semiconductor on the incident light is increased.
3. The method for preparing the photoconductive high-speed detector based on surface plasmon enhancement, as claimed in claim 1, wherein the method comprises the following steps:
the double-layer metal grating electrode is electrically connected through the outer annular electrode, and the double-layer metal grating electrode and the lower metal electrode respectively form an anode and a cathode of the detector and are used for externally biasing the detector.
4. The method for preparing the photoconductive high-speed detector based on surface plasmon enhancement, as claimed in claim 1, wherein the method comprises the following steps:
the lower semiconductor layer and the upper semiconductor grating are made of one or more of GaAs, alAs, inAs, inGaAs, alGaAs, inGaAsP alloy.
5. The method for preparing the photoconductive high-speed detector based on surface plasmon enhancement, as claimed in claim 1, wherein the method comprises the following steps: the anti-reflection layer is arranged on the double-layer metal grating electrode.
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| JP2006259064A (en) * | 2005-03-16 | 2006-09-28 | Fdk Corp | Method and device for intensifying electric field with surface plasmon |
| CN101563790A (en) * | 2006-12-20 | 2009-10-21 | 日本电气株式会社 | Photodiode, optical communication device, and optical interconnection module |
| CN103400872A (en) * | 2013-06-30 | 2013-11-20 | 北京工业大学 | Structure and preparation method of surface electric field enhanced PIN photoelectric detector |
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| WO2006030608A1 (en) * | 2004-09-13 | 2006-03-23 | Kyushu Institute Of Technology | Terahertz electromagnetic wave radiation element and its manufacturing method |
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| JP2006259064A (en) * | 2005-03-16 | 2006-09-28 | Fdk Corp | Method and device for intensifying electric field with surface plasmon |
| CN101563790A (en) * | 2006-12-20 | 2009-10-21 | 日本电气株式会社 | Photodiode, optical communication device, and optical interconnection module |
| CN103400872A (en) * | 2013-06-30 | 2013-11-20 | 北京工业大学 | Structure and preparation method of surface electric field enhanced PIN photoelectric detector |
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