CN115800189B - On-chip overcurrent protection circuit and protection method - Google Patents
On-chip overcurrent protection circuit and protection method Download PDFInfo
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- CN115800189B CN115800189B CN202310023182.3A CN202310023182A CN115800189B CN 115800189 B CN115800189 B CN 115800189B CN 202310023182 A CN202310023182 A CN 202310023182A CN 115800189 B CN115800189 B CN 115800189B
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Abstract
The invention discloses an on-chip overcurrent protection circuit and a protection method, which are used for protecting a power circuit of a chip and comprise the following steps: the current comparator, the detection device and the switch module; the current value output by the detection device is larger than the protection threshold, the output signal of the output end of the current comparator is low, the switch module is turned on, and the detection device and the power circuit are disconnected; the current value output by the detection device is smaller than the protection threshold, the output signal of the output end of the current comparator is high, the switch module is disconnected, the detection device is turned on, and the power circuit is enabled. In the invention, the current value passing through the detection device is directly compared with the protection threshold value, and the switch module, the detection device and the power device are controlled to be turned on and off according to the comparison result, so that the power circuit is subjected to overcurrent protection. The detected current value is directly compared with the protection threshold value, and a voltage comparator is not needed in the circuit, so that compared with the prior art, the protection circuit is simpler in structure and lower in design cost.
Description
Technical Field
The invention relates to the technical field of overcurrent protection, in particular to an on-chip overcurrent protection circuit and a protection method.
Background
On-chip PMUs or monolithic power chips often require over-current protection, but general over-current protection circuits are complex in design, require various comparators and delay circuits, and have large protection threshold variations with process, temperature and voltage.
In the prior art, an overcurrent protection circuit for an integrated circuit is related to the Chinese invention CN2015139010. X, wherein an additional voltage converter and a voltage comparator are needed in the circuit to convert an electric signal into a voltage, and then the obtained voltage is compared with a reference voltage; an overcurrent protection circuit according to chinese invention CN202010540422.3 requires not only current to voltage conversion but also a plurality of voltage comparators for setting the entry/exit hysteresis. The existing overcurrent protection circuit is complex in design.
Disclosure of Invention
The invention aims to provide an on-chip overcurrent protection circuit which can directly compare a detected current value with a protection threshold current, has a simple structure and is low in design cost.
The invention provides an on-chip overcurrent protection circuit, which is used for protecting a power circuit of a chip, and comprises: a protection circuit and a power circuit; the protection circuit includes: the current comparator, the detection device and the switch module; when the current value output by the detection device is larger than a protection threshold value, the output end of the current comparator outputs a low-level signal to control the switch module to be turned on so as to turn off the detection device and the power circuit; when the current value output by the detection device is smaller than the protection threshold value, the output end of the current comparator outputs a high-level signal to control the switch module to be closed so as to conduct the detection device and the power circuit.
Further, the current comparator comprises a first resistor, a second resistor, a first reference current source, a second reference current source, a first PMOS tube and a second PMOS tube; one ends of the first resistor and the second resistor are connected with a power supply voltage; the other end of the first resistor is connected with the source electrode of the first PMOS tube, the grid electrode of the first PMOS tube is connected with the first reference current source after being short-circuited with the drain electrode, and the grid electrode of the first PMOS tube is connected with the grid electrode of the second PMOS tube; the other end of the second resistor is connected with the source electrode of the second PMOS tube, and the drain electrode of the second PMOS tube is connected with a second reference current source.
Further, the current comparator further comprises a first capacitor and a hysteresis buffer; the input end of the hysteresis buffer is connected with the drain electrode of the second PMOS tube, and the output end of the hysteresis buffer is connected with the switch module; one end of the first capacitor is connected between the input end of the hysteresis buffer and the drain electrode of the second PMOS tube, and the other end of the first capacitor is grounded.
Furthermore, the detection device and the switch module are PMOS tubes.
Further, a source electrode of the detection device is connected with a source electrode of the second PMOS tube, a drain electrode of the detection device is connected with a power output port of the chip, and a grid electrode of the detection device is connected with a drain electrode of the switch module; the source electrode of the switch module is connected with the power supply voltage, and the grid electrode of the switch module is connected with the output end of the current comparator.
Further, the power circuit comprises a third resistor, a fourth resistor, a power device and an amplifier; the grid electrode of the power device is connected with the grid electrode of the detection device, the source electrode of the power device is powered by the power supply voltage, the drain electrode of the power device is connected with the third resistor and the fourth resistor in series and then grounded, and the power device is connected with a chip power output port; the positive input end of the amplifier is connected between the fourth resistor and the third resistor, the negative electrode of the amplifier is connected with a reference voltage, and the output end of the amplifier is connected with the grid electrode of the power device.
The present invention also provides a method of on-chip over-current protection using an on-chip over-current protection circuit as described above, the method comprising the steps of: when the power device works normally, the current value output by the detection device is smaller than the protection threshold value, the current comparator outputs a high-level signal to control the switch module to be turned off, the detection device is turned on, the power circuit normally provides power output, and the current of the detection device is the sampling of the output current of the power device; when overcurrent occurs, the current value output by the detection device is larger than the protection threshold value, the current comparator outputs a low-level signal to control the switch module to be turned on, the switch module controls the detection device to be turned off, the power circuit is turned off, no power output is provided, the current of the power device is zero, and the detection device does not have current output.
Further, the method for obtaining the protection threshold value comprises the following steps: during normal operation, the grid voltage of the first PMOS tube and the source grid voltage of the second PMOS tube are obtained; when the source voltages of the first PMOS tube and the second PMOS tube are the same, calculating the source current of the detection device, and taking the source current at the moment as a protection threshold.
Further, the current comparator further comprises a first capacitor and a hysteresis buffer; when the current on the second PMOS tube is smaller than the value of the second reference current source connected with the drain electrode of the second PMOS tube, the first capacitor starts to discharge, but the level on the first capacitor is still higher than the high input threshold value of the hysteresis buffer, and the hysteresis buffer still outputs a high-level signal; after a period of time, the first capacitor is discharged, and the hysteresis buffer works to output a low-level signal; when the current value of the detection device is reduced below a protection threshold, the second PMOS tube current is larger than the value of a second reference current source connected with the drain electrode of the second PMOS tube current, the first capacitor is charged, and when the first capacitor is charged to a level higher than the input high threshold of the hysteresis buffer, the hysteresis buffer works to output a high-level signal.
Further, the charge-discharge time range of the first capacitor is more than 100 μs.
Compared with the prior art, the invention has at least the following beneficial effects:
in the invention, the current value passing through the detection device is directly compared with the protection threshold value, and the switch module, the detection device and the power device are controlled to be turned on and off according to the comparison result, so that the power circuit is subjected to overcurrent protection. The detected current value is directly compared with the protection threshold value, and a voltage comparator is not needed in the circuit, so that compared with the prior art, the protection circuit is simpler in structure, lower in design cost and higher in overcurrent protection speed.
Furthermore, the current protection threshold is only related to the number ratio of devices in the circuit, so that the protection threshold is more stable, and the reliability of overcurrent protection is improved.
Drawings
Fig. 1 is a schematic diagram of an on-chip overcurrent protection circuit according to a first embodiment of the invention.
Detailed Description
An on-chip overcurrent protection circuit and method of the present invention will be described in more detail below with reference to the drawings, in which preferred embodiments of the invention are shown, it being understood that one skilled in the art can modify the invention described herein while still achieving the advantageous effects of the invention. Accordingly, the following description is to be construed as broadly known to those skilled in the art and not as limiting the invention.
The invention is more particularly described by way of example in the following paragraphs with reference to the drawings. Advantages and features of the invention will become more apparent from the following description and from the claims. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention.
Example 1
The embodiment provides an overcurrent protection circuit for protecting a detection circuit of a chip, the on-chip overcurrent protection circuit comprising: a protection circuit and a power circuit; the protection circuit comprises a current comparator, a detection device and a switch module; when the current value output by the detection device is larger than a protection threshold value, the output end of the current comparator outputs a low-level signal to control the switch module to be turned on so as to disconnect the detection device; when the current value output by the detection device is smaller than the protection threshold value, the output end of the current comparator outputs a high-level signal to control the switch module to be disconnected so as to conduct the detection device.
Specifically, referring to fig. 1, in the embodiment, the current comparator includes a first resistor R1, a second resistor R2, a first reference current source I0, a second reference current source I1, a first PMOS transistor MP1, and a second PMOS transistor MP2.
One end of the first resistor R1 and one end of the second resistor R2 are connected with a power supply voltage; the other end of the first resistor R1 is connected with the source electrode of the first PMOS tube MP1, the grid electrode and the drain electrode of the first PMOS tube MP1 are short-circuited and then connected with a first reference current source I0, and the grid electrode of the first PMOS tube MP1 is connected with the grid electrode of the second PMOS tube MP 2; the other end of the second resistor R2 is connected with the source electrode of the second PMOS tube MP2, and the drain electrode of the second PMOS tube MP2 is connected with a second reference current source I1.
Further, the current comparator also comprises a first capacitor C1 and a hysteresis buffer; the input end of the hysteresis buffer is connected with the drain electrode of the second PMOS tube MP2, and the output end of the hysteresis buffer is connected with the switch module MP5; one end of the first capacitor C1 is connected between the input end of the hysteresis buffer and the drain electrode of the second PMOS tube MP2, and the other end of the first capacitor C is grounded.
The detection device MP3 and the switch module MP5 are PMOS tubes. The source electrode of the detection device MP3 is connected with the source electrode of the second PMOS tube MP2, the drain electrode of the detection device MP3 is connected with a chip interface, and the grid electrode of the detection device MP3 is connected with the drain electrode of the switch module MP5; the source electrode of the switch module MP5 is connected with the power supply voltage, and the grid electrode of the switch module MP5 is connected with the output end of the current comparator.
Further, the on-chip overcurrent protection circuit further comprises a power circuit, and the power circuit comprises a third resistor R3, a fourth resistor R4, a power device MP4 and an amplifier.
The grid electrode of the power device MP4 is connected with the grid electrode of the detection device MP3, the source electrode of the power device MP4 is powered by the power supply voltage, and the drain electrode of the power device MP4 is connected with the third resistor R3 and the fourth resistor R4 in series and then grounded, and is connected with a chip power output port; the positive input end of the amplifier is connected between the fourth resistor R4 and the third resistor R3, the negative electrode of the amplifier is connected with a reference voltage, and the output end of the amplifier is connected with the grid electrode of the power device MP 4.
The detection device MP3 switch module MP5 detects the device MP3 power device MP4, and the amplifier in the power circuit can stably output an output voltage with a voltage value of Vref (1+r2/R3), so that the power output circuit has strong driving capability.
In this embodiment, the current value of the detection device MP3 is compared with the protection threshold, and different signals are output from the output end of the current comparator according to the comparison result, so as to control the switch module MP5, the detection device MP3 and the power device MP4 to be turned on and off, and if the current value of the detection device MP3 exceeds the protection threshold, the output end of the current comparator outputs a low level to turn on the switch module MP5, so as to control the detection device MP3 and the power device MP4 to be turned off, thereby performing overcurrent protection on the chip.
The current value detected by the detection device MP3 is directly compared with the protection threshold value, and a voltage comparator is not required to be arranged in the circuit, so that the on-chip overcurrent protection circuit is simpler in structure, lower in design cost and higher in overcurrent protection speed.
Example two
The present embodiment provides a method for protecting an overcurrent protection circuit, which adopts the on-chip overcurrent protection circuit as described in the first embodiment, and specifically includes the steps of:
when the power device works normally, the current value output by the detection device MP3 is smaller than the protection threshold value, the current passing through the second PMOS tube MP2 is far larger than the current of the second reference current source I1, at the moment, the current comparator outputs a high-level signal to control the switch module MP5 to be disconnected, the detection device MP3 is started, the power circuit works normally, and the current of the detection device MP3 is the sampling of the output current of the power device MP 4;
when overcurrent occurs, the current value output by the detection device MP3 is greater than the protection threshold, the current flowing through the second PMOS transistor MP2 is less than the current flowing through the second reference current source I1, the current comparator outputs a low-level signal to control the switch module MP5 to be turned on, the switch module MP5 controls the detection device MP3 to be turned off, the current flowing through the power device MP3 is zero, and the power circuit is turned off and no power output is provided.
Specifically, the protection threshold is calculated as follows:
referring to fig. 1, it is assumed that the number ratio of the detection device MP3, the power device MP4, and MP3 is K0, which is K0 x (W/L); where W represents the width of the device and L represents the length of the device.
Assuming that MP1, MP2, MP3 are identical in size and are both W and L, at this time, I '=i, r2=r, r1=k1=r2=k1×r, where I' is the current flowing through MP1, and i″ is the current flowing through MP2.
The source voltage of the first PMOS transistor MP1 is:
wherein VDD is the reference voltage to which the negative electrode of the amplifier is connected, and VTHP is the threshold voltage.
The source gate voltage of the second PMOS transistor MP2 is:
。
the source current value of the second PMOS MP2 is:
。
therefore, the current value Is flowing through the second PMOS MP2 Is far greater than the current value i″ flowing through the second reference current source I1 during normal operation, and at this time, the output terminal of the current comparator outputs a high level signal.
As the current value flowing through the detector MP3 increases, when the current flowing through the detector MP3 increases to make the source voltage of the second PMOS transistor MP2 equal to the source voltage of the first PMOS transistor MP1, this means:
calculating +.>
。
The calculation result shows that the threshold value of the overcurrent protection circuit is almost irrelevant to the parameters of the devices and is only related to the number proportion of the devices, so that the threshold value of the overcurrent protection circuit is more stable, and the reliability of the overcurrent protection is improved.
Further, the current comparator further comprises a first capacitor C1 and a hysteresis buffer.
The gate voltage device has low current, and is characterized in that
When the current flowing through the second PMOS tube is smaller than the current value I '' flowing through the second reference current source, the first capacitor C1 starts to discharge to the hysteresis buffer, the hysteresis buffer is maintained to work, and a high-level signal is output; after a period of time, the first capacitor C1 is completely discharged, and the hysteresis buffer works to output a low-level signal. That is, the hysteresis buffer will prevent over-current false triggers. Only when the capacitor gives out a certain charge value and the voltage drops to a certain threshold value, the hysteresis buffer can transmit an electric signal to the output end of the current comparator, so that the output end of the current comparator outputs a low-level signal.
Similarly, when the current value of the detection device MP3 decreases below the protection threshold, the second PMOS is turned on to charge the first capacitor C1, and when the charging of the first capacitor C1 is completed, the hysteresis buffer works to output a high-level signal.
In one embodiment, the voltage threshold for the output low level is 0.2 vdd, and the voltage threshold for the output high level is 0.8 vdd. The charge-discharge time range of the first capacitor C1 is more than 100 mu s.
By setting a hysteresis buffer, the phenomenon of over-current false triggering in the circuit is prevented. Compared with the prior art, the method has the advantages that the exiting or entering hysteresis can be completed by only one hysteresis buffer, and a plurality of voltage comparators are not required to be arranged, so that the circuit structure is simpler, and the design cost is further reduced.
In summary, the current value passing through the detection device MP3 is directly compared with the protection threshold, and the switch module MP5, the detection device MP3 and the power device MP4 are controlled to be turned on and off according to the comparison result, so that the chip is over-current protected. The detected current value is directly compared with the protection threshold value, and a voltage comparator is not needed in the circuit, so that compared with the prior art, the protection circuit is simpler in structure, lower in design cost and higher in overcurrent protection speed. In addition, the current protection threshold is only related to the number ratio of devices in the circuit, so that the protection threshold is more stable, and the reliability of overcurrent protection is improved.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (9)
1. An on-chip overcurrent protection circuit for protecting a power circuit of a chip, the on-chip overcurrent protection circuit comprising: a protection circuit and a power circuit; the protection circuit includes: the current comparator, the detection device and the switch module;
the current comparator comprises a first resistor, a second resistor, a first reference current source, a second reference current source, a first PMOS tube and a second PMOS tube;
one ends of the first resistor and the second resistor are connected with a power supply voltage; the other end of the first resistor is connected with the source electrode of the first PMOS tube, the grid electrode of the first PMOS tube is connected with the first reference current source after being short-circuited with the drain electrode, and the grid electrode of the first PMOS tube is connected with the grid electrode of the second PMOS tube; the other end of the second resistor is connected with the source electrode of the second PMOS tube, and the drain electrode of the second PMOS tube is connected with a second reference current source;
when the current value output by the detection device is larger than a protection threshold value, the output end of the current comparator outputs a low-level signal to control the switch module to be turned on so as to turn off the detection device and the power circuit;
when the current value output by the detection device is smaller than the protection threshold value, the output end of the current comparator outputs a high-level signal to control the switch module to be closed so as to conduct the detection device and the power circuit.
2. The on-chip over-current protection circuit of claim 1, wherein the current comparator further comprises a first capacitor and a hysteresis buffer;
the input end of the hysteresis buffer is connected with the drain electrode of the second PMOS tube, and the output end of the hysteresis buffer is connected with the switch module; one end of the first capacitor is connected between the input end of the hysteresis buffer and the drain electrode of the second PMOS tube, and the other end of the first capacitor is grounded.
3. The on-chip over-current protection circuit of claim 1, wherein the detection device and the switch module are PMOS transistors.
4. The on-chip over-current protection circuit of claim 3, wherein a source of the detection device is connected to a source of the second PMOS transistor, a drain of the detection device is connected to a chip power output port, and a gate of the detection device is connected to a drain of the switch module; the source electrode of the switch module is connected with the power supply voltage, and the grid electrode of the switch module is connected with the output end of the current comparator.
5. The on-chip over-current protection circuit of claim 3, wherein the power circuit comprises a third resistor, a fourth resistor, a power device, and an amplifier;
the grid electrode of the power device is connected with the grid electrode of the detection device, the source electrode of the power device is connected with the power supply voltage, and the drain electrode of the power device is connected with the third resistor and the fourth resistor in series and then grounded and is connected with the power output port of the chip; the positive input end of the amplifier is connected between the fourth resistor and the third resistor, the negative electrode of the amplifier is connected with a reference voltage, and the output end of the amplifier is connected with the grid electrode of the power device.
6. A method of on-chip over-current protection circuit using the on-chip over-current protection circuit of any of claims 1-5, the method comprising the steps of:
when the power device works normally, the current value output by the detection device is smaller than the protection threshold value, the current comparator outputs a high-level signal to control the switch module to be turned off, the detection device is turned on, the power circuit normally provides power output, and the current of the detection device is the sampling of the output current of the power device;
when overcurrent occurs, the current value output by the detection device is larger than the protection threshold value, the current comparator outputs a low-level signal to control the switch module to be turned on, the switch module controls the detection device to be turned off, the power circuit is turned off, no power output is provided, the current of the power device is zero, and the detection device does not have current output.
7. The method of on-chip over-current protection circuit of claim 6, wherein the method of obtaining the protection threshold comprises the steps of:
during normal operation, the grid voltage of the first PMOS tube and the source grid voltage of the second PMOS tube are obtained;
when the source voltages of the first PMOS tube and the second PMOS tube are the same, calculating the source current of the detection device, and taking the source current at the moment as a protection threshold.
8. The method of on-chip over-current protection circuit of claim 6, wherein the current comparator further comprises a first capacitor and a hysteresis buffer;
when the current on the second PMOS tube is smaller than the value of the second reference current source connected with the drain electrode of the second PMOS tube, the first capacitor starts to discharge, but the level on the first capacitor is still higher than the high input threshold value of the hysteresis buffer, and the hysteresis buffer still outputs high level;
after a period of time, the first capacitor is discharged, and the hysteresis buffer works to output a low-level signal;
when the current value of the detection device is reduced below a protection threshold, the second PMOS tube current is larger than the value of a second reference current source connected with the drain electrode of the second PMOS tube current, the first capacitor is charged, and when the first capacitor is charged, the hysteresis buffer works to output a high-level signal.
9. The method of on-chip over-current protection according to claim 8, wherein the charge-discharge time of the first capacitor is in a range of 100 μs or more.
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| KR100608112B1 (en) * | 2004-08-27 | 2006-08-02 | 삼성전자주식회사 | Power regulator having over-current protection circuit and method of over-current protection thereof |
| US8081410B1 (en) * | 2008-05-29 | 2011-12-20 | Vimicro Corporation | Overcurrent protection circuit |
| CN102170103A (en) * | 2011-03-24 | 2011-08-31 | 华为技术有限公司 | Electronic circuit breaker and processing method thereof |
| CN106774595A (en) * | 2017-01-09 | 2017-05-31 | 电子科技大学 | A kind of current foldback circuit for low pressure difference linear voltage regulator |
| CN106991988B (en) * | 2017-05-17 | 2019-07-02 | 深圳市华星光电技术有限公司 | The over-current protection system and method for GOA circuit |
| CN109962450B (en) * | 2017-12-22 | 2022-04-15 | 武汉杰开科技有限公司 | Short-circuit protection device |
| CN111740381B (en) * | 2020-07-10 | 2022-08-19 | 广东美芝制冷设备有限公司 | Switching power supply circuit, air conditioning equipment and refrigerator |
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