CN115799027A - Method for improving cleaning efficiency in CCP reaction cavity - Google Patents
Method for improving cleaning efficiency in CCP reaction cavity Download PDFInfo
- Publication number
- CN115799027A CN115799027A CN202111055390.9A CN202111055390A CN115799027A CN 115799027 A CN115799027 A CN 115799027A CN 202111055390 A CN202111055390 A CN 202111055390A CN 115799027 A CN115799027 A CN 115799027A
- Authority
- CN
- China
- Prior art keywords
- base
- auxiliary assembly
- reaction cavity
- area
- dome
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a method for improving the cleaning efficiency in a CCP reaction cavity, which comprises the following steps: providing a reaction cavity, wherein a base is arranged in the reaction cavity; providing an auxiliary assembly, wherein the upper surface area of the auxiliary assembly is larger than that of the base; placing the auxiliary assembly on the base, and enabling the lower surface of the auxiliary assembly to be in contact with the upper surface of the base; and introducing cleaning gas to form plasma, and removing the polymer deposited in the reaction cavity. The method provided by the invention can enhance the bombardment of plasma on the earth pole in the cleaning process and improve the cleaning efficiency of the earth pole without opening a cavity to wipe the high polymer deposited on the surface of the earth pole.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a plasma cleaning process.
Background
In the CCP etching process, in order to make the etching rate of the etching gas to the process layer greater than that to the mask layer and ensure a sufficiently high etching selectivity, a method of depositing a high polymer gas is generally adopted to protect the sidewalls of the etched aperture. The high polymer can be deposited on the surface of the wafer and can also be deposited on the inner wall of the cavity to pollute the environment in the cavity, so that the environment of each wafer is different, and the difference of etching results is caused; the deposited polymer also carries the risk of electrical discharge and sparking between different components under the action of the radio frequency field.
O is usually introduced into the chamber 2 、CF 4 Or Ar plasma to clean the high polymer. However, high polymers are not easily cleaned, limited by the specific configuration of the plasma chamber, for example, in a 12 inch chamber, the area ratio of the ground to the cathode is about 3. When the same chamber is used to etch an 8 inch wafer, the area ratio of the ground to the cathode is about 6. Due to the characteristic of plasma electrical neutrality, the ion flux of the plasma to the ground pole and the cathode is equivalent, when the area of the ground pole and the cathode on the two sides of the plasma is larger, the ion bombardment energy on the ground pole is much less than that of the cathode, so that the cleaning efficiency of the existing cleaning process on the high polymer deposited on the ground pole is not high, and the cavity is often required to be opened for manual cleaning.
Disclosure of Invention
The invention aims to reduce the area ratio of the ground pole to the cathode through the auxiliary assembly, enhance the bombardment of plasma to the ground pole in the cleaning process and improve the cleaning efficiency of the ground pole.
To achieve the above objects, the present invention provides a method for improving cleaning efficiency in a CCP reaction chamber, comprising:
providing a reaction cavity, wherein a base is arranged in the reaction cavity;
providing an auxiliary assembly, wherein the upper surface area of the auxiliary assembly is larger than that of the base;
placing the auxiliary assembly on the base so that the lower surface of the auxiliary assembly is in contact with the upper surface of the base;
and introducing cleaning gas to form plasma, and removing the polymer deposited in the reaction cavity.
Optionally, the auxiliary component comprises a round bottom with an area equal to or larger than the area of the upper surface of the base and a dome with an area larger than the area of the round bottom; and placing the auxiliary assembly on the base, wherein the auxiliary assembly is fixed after the lower surface of the round bottom is contacted with the upper surface of the base.
Optionally, direct current is introduced into the base to generate electrostatic attraction to the round bottom so as to fix the auxiliary assembly.
Optionally, the auxiliary assembly is mechanically fixed.
Optionally, an upper electrode opposite to the base is disposed in the reaction chamber, the auxiliary assembly is placed on the base, and the dome is parallel to the upper electrode.
Optionally, an upper grounding ring and a moving ring surrounding the upper electrode are further arranged in the reaction chamber, and the auxiliary assembly is used for improving the cleaning efficiency of the polymer on the upper electrode, the upper grounding ring and the moving ring.
Optionally, the round bottom is shaped the same as the wafer to be processed by the susceptor, and the dome is shaped the same as a wafer larger than the area of the susceptor.
Optionally, the dome and the round bottom are integrally formed.
Optionally, the dome and the round bottom are formed by bonding two different wafers together.
Optionally, the auxiliary component is a semiconductor material.
Optionally, after the cleaning gas is introduced, a source radio frequency is applied to excite the plasma, and a bias radio frequency is applied to enhance the bombardment intensity of the plasma.
Optionally, the source rf is applied to the pedestal or the upper electrode and the bias rf is applied to the pedestal.
Optionally, the frequency of the source radio frequency is greater than 40MHz, and the frequency of the bias radio frequency is less than 20MHz.
Optionally, the cleaning gas comprises a fluorocarbon gas, an oxidizing gas, and a shielding gas.
Optionally, the auxiliary assembly is conveyed into the reaction cavity through a conveying mechanism and placed on the base; and after cleaning is finished, the auxiliary assembly is moved out of the reaction cavity through the conveying mechanism.
Compared with the prior art, the invention has the beneficial effects that:
according to the method for improving the cleaning efficiency in the CCP reaction cavity, under the condition that a reaction cavity originally designed for etching a wafer with a larger area is used for etching the wafer with a smaller area, the cavity does not need to be opened to wipe the high polymer deposited on the surface of the earth pole, and the auxiliary assembly consisting of the round bottom and the dome is arranged on the base, so that the bombardment of plasma on the earth pole in the cleaning process is enhanced, the cleaning efficiency on the earth pole is improved, and the operability of the method for improving the utilization rate of the reaction cavity is enhanced.
Drawings
FIG. 1 is a flow chart of a method for improving the efficiency of cleaning within a CCP reaction chamber provided by the present invention.
FIG. 2 is a schematic diagram of a CCP reaction chamber according to the present invention.
Fig. 3 is a schematic structural diagram of an auxiliary assembly provided by the present invention.
In the figure, 1-reaction chamber, 2-base, 3-confinement ring, 4-gas shower head, 5-upper grounding ring, 6-moving ring, 7-auxiliary component, 71-round bottom, 72-dome, 8-high polymer.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it is to be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be a mechanical connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in a specific case to those of ordinary skill in the art.
A Capacitively Coupled Plasma (CCP) etching apparatus is an apparatus for generating plasma in a reaction chamber by capacitively coupling a radio frequency power applied to a plate and etching the plasma.
Aiming at the etching process with high etching selection ratio, in order to protect the side wall of the etched hole, high polymer is deposited in the reaction cavity, so that the high polymer is deposited on the surface of the etched wafer, and the high polymer is also deposited on the inner wall of the reaction cavity. Then, introducing O 2 、CF 4 Or Ar plasma to clean the high polymer.
In some process flows, there are situations where the ground to cathode area ratio has to be increased, for example, to increase the utilization of CCP etching equipment, a reaction chamber originally designed for etching a larger area of a wafer can be used to etch a smaller area of the wafer. The reaction cavity originally designed for etching 12-inch wafers can be directly used for etching 8-inch wafers under the condition of not changing the ground pole of the reaction cavity, so that only the cathode is changed to adapt to small-size wafers, at the moment, the area ratio of the ground pole to the cathode is increased because the area of the cathode is reduced, and further the cleaning effect of the cavity is poor. For another example, in the high aspect ratio etching process, the bombardment on the wafer needs to be enhanced, so that the area ratio of the ground to the cathode is increased, and in such a process, because the process gas for protecting the sidewalls of the deep holes on the wafer and the mask is used, more high polymer is deposited, and the cleaning difficulty is further increased.
In summary, due to the problem of poor cleaning effect caused by the increase of the area ratio of the grounding electrode to the cathode due to the original design scheme or the later modification scheme of the chamber, in order to maintain the process cleanliness of the chamber, the reaction cavity needs to be opened for manual cleaning, the vacuum needs to be broken and then the chamber needs to be vacuumized after being opened, and the processes greatly delay the normal production process and reduce the production efficiency of the semiconductor device.
In view of the above problems, the present invention provides a method for improving the cleaning efficiency in a CCP reaction chamber.
As shown in fig. 1, the method provided by the present invention comprises:
s1, providing a reaction cavity, wherein a base is arranged in the reaction cavity.
As shown in fig. 2, a susceptor 2 for placing a wafer is disposed in a reaction chamber 1 of the CCP etching apparatus, and serves as a lower electrode of the reaction chamber 1, and a gas shower head 4 disposed parallel to and opposite to the susceptor 2 and serves as an upper electrode of the reaction chamber 1, where the gas shower head 4 is used to deliver a reaction gas to the reaction chamber 1. A reaction region is formed between the upper electrode and the lower electrode.
The confinement ring 3 is arranged around the base 2, and the exhaust passage is arranged on the confinement ring 3, so that the plasma can be confined in the reaction area between the upper electrode and the lower electrode, and the plasma is prevented from entering the air pump through the reaction area.
An upper ground ring 5 and a moving ring 6 are provided around the gas shower head 4. The upper grounding ring 5 can improve the etching uniformity, increase the area of a grounding electrode, enhance the bombardment of the plasma on the wafer and improve the etching efficiency of the plasma on the wafer. A gap for the wafer to enter and exit is arranged on the side wall of the reaction cavity 1, the wafer is sent into the reaction cavity 1 through the gap, the moving of the moving ring 6 is controlled to shield the gap, and radio frequency is applied to the base 2 and/or the gas spray header 4 to form plasma.
In the reaction cavity 1, at least a restraint ring 3, a gas spray header 4, an upper grounding ring 5 and a moving ring 6 form the inner wall of the reaction cavity 1, and the restraint ring 3, the gas spray header 4, the upper grounding ring 5 and the moving ring 6 are all grounded. During plasma etching, the polymer 8 formed by reaction is deposited on the surface of the grounded component, and excessive polymer 8 deposition risks falling off and causing surface defects on the wafer, so that the wafer needs to be cleaned regularly.
And S2, providing an auxiliary assembly, wherein the upper surface area of the auxiliary assembly is larger than that of the base.
The auxiliary components are shown in fig. 2 and 3. The auxiliary component 7 is a semiconductor material, such as monocrystalline silicon, silicon carbide, silicon germanium, and the like. The auxiliary assembly 7 is composed of a round bottom 71 and a dome 72, the area of the round bottom 71 is larger than or equal to the upper surface area of the base 2, and the area of the dome 72 is larger than the upper surface area of the base 2. In other embodiments, the auxiliary component may have other shapes for the bottom and top surfaces. The area ratio of the dome 72 to the round bottom 71 is (1-3): 1, area ratio of dome 72 to round bottom 71 does not take 1. The dome 72 having an area larger than that of the upper surface of the base 2 is stacked on the round bottom 71, so that the area of the lower electrode is enlarged from the upper surface of the base 2 to the area of the dome 72, thereby reducing the area ratio of the ground to the cathode without changing the area of the ground. Rounded bottom 71 may be attached to the upper surface of base 2 by electrostatic attraction and rounded bottom 71 has a thickness that may accommodate the configuration of the surrounding components of the base so that dome 72 may be unobstructed.
In a preferred embodiment, rounded bottom 71 and rounded top 72 are the same shape as a standard wafer, and rounded bottom 71 is the same shape as a wafer to be processed by current process pedestal 2, and rounded top 72 is the same shape as a wafer larger than rounded bottom 71. The round bottom 71 and the dome 72 are fixedly connected in parallel, and can be integrally formed, for example, a wafer with the thickness larger than or equal to that of the auxiliary component 7 and the area larger than or equal to that of the dome 72 is polished and engraved to obtain the auxiliary component 7; the auxiliary component 7 can also be formed by bonding two wafers together, for example, using teflon adhesive, directly bonding the wafers meeting the size and shape requirements of the round bottom 71 and the round top 72 together; if the auxiliary component 7 formed by the bonding mode still does not meet the requirement, the component can be further processed by a grinding and carving mode until the design requirement is met.
And S3, placing the auxiliary assembly on the base, and enabling the lower surface of the auxiliary assembly to be in contact with the upper surface of the base.
After the sub-assembly 7 is placed on the susceptor 2, the rounded bottom 71 faces the upper surface of the susceptor 2, and the dome 72 faces the gas shower head 4 and is relatively parallel to the gas shower head 4. After the round bottom 71 of the auxiliary member 7 contacts the base 2, the step of fixing the auxiliary member 7 to the base 2 may be further included. Because the auxiliary component 7 is made of semiconductor material, direct current can be introduced into the base 2, and the auxiliary component 7 is fixed through the electrostatic adsorption round bottom 71; or to fix the auxiliary assembly 7 by mechanical means.
And S4, introducing cleaning gas to form plasma, and removing the polymer deposited in the reaction cavity.
The cleaning gas is excited into a plasma by applying a source radio frequency. The source rf may be applied to the susceptor 2 as a lower electrode and may also be applied to the gas shower head 4 as an upper electrode. The source radio frequency has a frequency greater than 40MHz. Further, a bias radio frequency is applied to enhance the bombardment intensity of the plasma, and the bias radio frequency may be applied to the susceptor 2 as a lower electrode. The frequency of the bias radio frequency is less than 20MHz.
The cleaning gas includes fluorocarbon gas, oxidizing gas, and shielding gas. The fluorocarbon gas at least comprises carbon tetrafluoride; the oxidizing gas comprises at least oxygen; the protective gas is an inert gas, preferably argon.
Even if the area of the ground and the area of the pedestal 2 are designed for etching wafers with different sizes, the auxiliary assembly 7 arranged on the pedestal 2 enlarges the area of the cathode, namely, reduces the area ratio of the ground to the cathode, and at the moment, the plasma is excited to clean the high polymer 8 deposited on the ground, so that the cleaning efficiency of the high polymer 8 deposited on the ground can be obviously improved.
In some embodiments, the moving ring 6 is controlled to expose a gap on the sidewall of the reaction chamber 1, the auxiliary component 7 is fed into the reaction chamber 1 through the conveying mechanism, and is placed on the susceptor 2, and the moving ring 6 is controlled to close the gap; after cleaning, the moving ring 6 is controlled again to open the gap, and the auxiliary assembly 7 is moved out of the reaction chamber 1 through the conveying mechanism.
Take a reaction chamber originally designed for etching a 12-inch wafer as an example, for etching an 8-inch wafer without increasing the ground level and only replacing the susceptor. When the reaction chamber etches a 12-inch wafer, the area ratio of the ground to the cathode is about 3; when the reaction chamber was modified to etch an 8 inch wafer, the area ratio of the ground to the cathode was 6.
S1, providing a reaction cavity, wherein a base is arranged in the reaction cavity.
A base used for placing 8-inch wafers and used as a lower electrode of the reaction cavity; and the gas spray header is arranged in parallel and opposite to the base and is used as an upper electrode of the reaction cavity for conveying reaction gas to the reaction cavity. A restraining ring is arranged around the base; an upper grounding ring and a moving ring are arranged around the gas spray header. The confinement ring, the gas spray header, the upper grounding ring and the moving ring form the inner wall of the reaction cavity, and the confinement ring, the gas spray header, the upper grounding ring and the moving ring are all grounded. The polymer to be cleaned is deposited on the grounded component surface.
And S2, providing an auxiliary assembly, wherein the upper surface area of the auxiliary assembly is larger than that of the base.
The secondary assembly includes a rounded bottom and a dome. A wafer with a round bottom of 8 inches and a wafer with a dome of 12 inches. And (3) bonding the round bottom and the dome together by using a polytetrafluoroethylene adhesive, and fixedly connecting the round bottom and the dome in parallel to form an auxiliary assembly. The reaction chamber is embodied for etching an 8 inch wafer, the area of the rounded bottom is equal to the upper surface area of the susceptor, and the area of the dome is greater than the upper surface area of the susceptor. The upper surface area of the susceptor is enlarged to the area of the dome, and the ground pole of the reaction chamber is designed for etching a 12-inch wafer, so that the ratio of the upper surface area of the susceptor to the area of the ground pole of the reaction chamber is restored from 6.
And S3, placing the auxiliary assembly on the base, and enabling the lower surface of the auxiliary assembly to be in contact with the upper surface of the base.
The moving ring is controlled to expose the gap on the side wall of the reaction cavity, and the gap is sealed after the auxiliary assembly is sent into the reaction cavity through the conveying mechanism. The round bottom of the auxiliary assembly is placed towards the base, the dome is towards the gas spray header, and the dome is parallel to the gas spray header. And introducing direct current to the base, and fixing the auxiliary assembly on the base in an electrostatic adsorption mode.
And S4, introducing cleaning gas to form plasma, and removing the polymer deposited in the reaction cavity.
Introducing oxygen into the reaction cavity 2 ，CF 4 And Ar. A source RF at 60MHz is applied to the showerhead to excite the cleaning gas into a plasma, which erodes the polymer deposited on the surface of the earth and the upper surface of the auxiliary components. And applying bias radio frequency with the frequency of 2MHz to the base to accelerate positive ions in the plasma, so as to provide activation energy for the plasma to erode the high polymer and accelerate the cleaning process of the high polymer. After cleaning, the movable ring is controlled to open the gap, and the auxiliary assembly is moved out of the reaction cavity through the conveying mechanism.
In summary, the present invention provides a method for improving the cleaning efficiency in the CCP reaction chamber, which enhances the bombardment of plasma on the ground in the cleaning process by placing an auxiliary assembly composed of a round bottom and a dome on the base, so as to improve the cleaning efficiency on the ground, and in the case of etching a wafer with a smaller area by using the reaction chamber originally designed for etching a wafer with a larger area, the chamber does not need to be opened to wipe off the high polymer deposited on the surface of the ground, thereby enhancing the operability of the method for improving the utilization rate of the reaction chamber.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (15)
1. A method for improving cleaning efficiency within a CCP reaction chamber, comprising:
providing a reaction cavity, wherein a base is arranged in the reaction cavity;
providing an auxiliary assembly, wherein the upper surface area of the auxiliary assembly is larger than that of the base;
placing the auxiliary assembly on the base so that the lower surface of the auxiliary assembly is in contact with the upper surface of the base;
and introducing cleaning gas to form plasma and remove the polymer deposited in the reaction cavity.
2. The method of claim 1, wherein the sub-assembly includes a rounded bottom having an area equal to or greater than an upper surface area of the base and a dome having an area greater than an area of the rounded bottom; and placing the auxiliary assembly on the base, wherein the auxiliary assembly is fixed after the lower surface of the round bottom is contacted with the upper surface of the base.
3. The method of claim 2, wherein a direct current is applied to the base to create an electrostatic attraction with the rounded bottom to secure the auxiliary assembly.
4. The method of claim 2, wherein the auxiliary component is secured mechanically.
5. The method of claim 2, wherein an upper electrode is disposed in the reaction chamber opposite the susceptor, and the auxiliary assembly is placed on the susceptor with the dome in opposing parallel relation to the upper electrode.
6. The method of claim 5, wherein an upper grounding ring and a moving ring surrounding the upper electrode are further provided in the reaction chamber, and the auxiliary assembly is used to improve the cleaning efficiency of the polymer on the upper electrode, the upper grounding ring and the moving ring.
7. The method of claim 2, wherein the rounded bottom is shaped to conform to a wafer to be processed by the susceptor, and wherein the dome conforms to a wafer having an area greater than the susceptor.
8. The method of claim 2, wherein the dome and the rounded bottom are integrally formed.
9. The method of claim 2 wherein the dome and round bottom are formed by bonding two different wafers together.
10. The method of claim 1, wherein the auxiliary component is a semiconductor material.
11. The method of claim 5, wherein after the cleaning gas is introduced, a source RF is applied to excite the plasma, and a bias RF is applied to enhance the bombardment intensity of the plasma.
12. The method of claim 11, wherein the source radio frequency is applied to the pedestal or the upper electrode and the bias radio frequency is applied to the pedestal.
13. The method of claim 11, wherein the source radio frequency has a frequency greater than 40MHz and the bias radio frequency has a frequency less than 20MHz.
14. The method of claim 1, wherein the cleaning gas comprises a fluorocarbon gas, an oxidizing gas, and a shielding gas.
15. The method of claim 1, wherein the auxiliary assembly is fed into the reaction chamber by a transfer mechanism and placed on the susceptor; and after cleaning is finished, the auxiliary assembly is moved out of the reaction cavity through the conveying mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111055390.9A CN115799027A (en) | 2021-09-09 | 2021-09-09 | Method for improving cleaning efficiency in CCP reaction cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111055390.9A CN115799027A (en) | 2021-09-09 | 2021-09-09 | Method for improving cleaning efficiency in CCP reaction cavity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115799027A true CN115799027A (en) | 2023-03-14 |
Family
ID=85473187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111055390.9A Pending CN115799027A (en) | 2021-09-09 | 2021-09-09 | Method for improving cleaning efficiency in CCP reaction cavity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115799027A (en) |
-
2021
- 2021-09-09 CN CN202111055390.9A patent/CN115799027A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1269529B1 (en) | Method for improving uniformity and reducing etch rate variation of etching polysilicon | |
| KR101369131B1 (en) | Apparatus and methods to remove films on bevel edge and backside of wafer | |
| US20060043066A1 (en) | Processes for pre-tapering silicon or silicon-germanium prior to etching shallow trenches | |
| US10037909B2 (en) | Plasma processing apparatus | |
| TWI611457B (en) | Plasma processing equipment, cleaning system thereof and control method | |
| TW200908136A (en) | Apparatus for plasma processing and method for plasma processing | |
| US20110011534A1 (en) | Apparatus for adjusting an edge ring potential during substrate processing | |
| CN101584031B (en) | Methods and apparatus for wafer edge processing | |
| JP2006523382A (en) | Method and apparatus for reducing substrate backside deposition during processing. | |
| CN214279906U (en) | Cleaning wafer and plasma processing device | |
| JPWO2002058125A1 (en) | Plasma processing apparatus and plasma processing method | |
| CN213660344U (en) | Plasma processing device | |
| WO2000031787A1 (en) | Dry etching device and dry etching method | |
| JP2007115839A (en) | Manufacturing method of semiconductor device and plasma processor | |
| CN115799027A (en) | Method for improving cleaning efficiency in CCP reaction cavity | |
| TWI758939B (en) | Inductively coupled plasma apparatus and method for operating the same | |
| KR101333521B1 (en) | Apparatus for plasma treatment | |
| JP2005079416A (en) | Plasma processing device | |
| JPH09306896A (en) | Plasma processor and plasma processing method | |
| TWI810825B (en) | A cleaning wafer, plasma processing device and processing method | |
| KR100346524B1 (en) | Apparatus for cleaning semiconductor wafer by means of plasma | |
| KR101362815B1 (en) | Method for plasma-treatment | |
| TWI837534B (en) | Plasma processing device and processing method | |
| WO2022249964A1 (en) | Cleaning method and plasma treatment method | |
| KR100576430B1 (en) | Method for etching polysilicon layer on the plasma etching system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |