CN115769389A - Lighting module and lighting device - Google Patents
Lighting module and lighting device Download PDFInfo
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- CN115769389A CN115769389A CN202180022855.2A CN202180022855A CN115769389A CN 115769389 A CN115769389 A CN 115769389A CN 202180022855 A CN202180022855 A CN 202180022855A CN 115769389 A CN115769389 A CN 115769389A
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Classifications
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/69—Details of refractors forming part of the light source
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/68—Details of reflectors forming part of the light source
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S43/00—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights
- F21S43/10—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by the light source
- F21S43/19—Attachment of light sources or lamp holders
- F21S43/195—Details of lamp holders, terminals or connectors
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S43/00—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights
- F21S43/20—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by refractors, transparent cover plates, light guides or filters
- F21S43/26—Refractors, transparent cover plates, light guides or filters not provided in groups F21S43/235 - F21S43/255
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S43/00—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights
- F21S43/40—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by the combination of reflectors and refractors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
- F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
- F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
- F21S41/141—Light emitting diodes [LED]
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S43/00—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights
- F21S43/10—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by the light source
- F21S43/13—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by the light source characterised by the type of light source
- F21S43/14—Light emitting diodes [LED]
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S43/00—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights
- F21S43/10—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by the light source
- F21S43/13—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by the light source characterised by the type of light source
- F21S43/15—Strips of light sources
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S43/00—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights
- F21S43/30—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by reflectors
- F21S43/33—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by reflectors characterised by their material, surface treatment or coatings
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Planar Illumination Modules (AREA)
- Led Device Packages (AREA)
Abstract
An illumination apparatus disclosed in an embodiment of the present invention includes: a substrate; a reflective layer disposed on the substrate; a light source passing through the reflective layer and disposed on the substrate; a resin layer disposed on the reflective layer; and an optical pattern disposed on the resin layer, wherein the light source includes a first light emitting device and a second light emitting device spaced apart from the first light emitting device, the optical pattern includes a first optical pattern disposed over the first light emitting device and a second optical pattern disposed over the second light emitting device, and the first and second optical patterns may have different areas.
Description
Technical Field
Embodiments of the present invention relate to a lighting module having a plurality of light sources and a lighting apparatus having the same. Embodiments of the present invention relate to a lighting module having at least one of a plurality of LEDs of different sizes and a lighting apparatus having the same.
Background
Lighting applications include automotive lights and backlights for displays and signage. Light emitting devices such as Light Emitting Diodes (LEDs) have advantages such as low power consumption, semi-permanent life, fast response speed, safety, and environmental protection, compared to conventional light sources such as fluorescent lamps and incandescent lamps. These light emitting diodes are applied to various display devices and various illumination devices such as, for example, indoor lamps or outdoor lamps. Recently, as a light source for vehicles, a lamp using a light emitting diode has been proposed. Light emitting diodes have the advantage of low power consumption compared to incandescent lamps. However, since the direction angle of light emitted from the light emitting diode is small, there is a demand for increasing the light emitting area of a lamp using the light emitting diode in the case where the light emitting diode is used as a vehicle lamp. The design freedom of the lamp can be increased due to the smaller light emitting diodes and it is economical due to its semi-permanent lifetime.
Disclosure of Invention
Technical problem
Embodiments of the present invention may provide a lighting module and a lighting apparatus in which a light source is sealed in a resin layer, and at least one of light emitting devices of the light source has a size different from that of another light emitting device. Embodiments of the present invention may provide a lighting module and a lighting apparatus in which a light source is sealed in a resin layer, and at least one of light emitting devices of the light source has a size smaller than that of another light emitting device. Embodiments of the present invention may provide a lighting module and a lighting apparatus in which light sources are sealed in a resin layer, and optical patterns are respectively disposed on light emitting devices of the light sources, wherein an area of at least one of the optical patterns is different from an area of another optical pattern. Embodiments of the present invention may provide a lighting module and a lighting apparatus in which at least one of optical patterns respectively disposed on light emitting devices has an area smaller than that of the other light emitting devices. Embodiments of the present invention may provide a lighting module and a lighting apparatus in which at least two light emitting devices have different lengths in one direction and have different numbers of LED chips.
Technical scheme
An illumination device according to an embodiment of the present invention includes: a substrate; a reflective layer disposed on the substrate; a light source passing through the reflective layer and disposed on the substrate; a resin layer disposed on the reflective layer; and an optical pattern disposed on the resin layer, wherein the light source includes a first light emitting device and a second light emitting device spaced apart from the first light emitting device, wherein the optical pattern includes a first optical pattern disposed on an upper portion of the first light emitting device and a second optical pattern disposed on an upper portion of the second light emitting device, and wherein the first optical pattern and the second optical pattern may have different areas.
According to an embodiment of the present invention, the first and second optical patterns may have a plurality of unit pattern layers having different areas and overlapping each other. An area of the unit pattern layer disposed at the uppermost side of the first optical pattern may be greater than an area of the unit pattern layer disposed at the uppermost side of the second optical pattern. An area of an uppermost unit pattern layer among the plurality of unit pattern layers disposed in the first optical pattern may be greater than an area of a lowermost unit pattern layer thereof. According to an embodiment of the present invention, the reflective layer may include a first hole in which the first light emitting device is disposed and a second hole in which the second light emitting device is disposed, and the first hole may be larger than the second hole. The length of the first hole in the long axis direction may be greater than the length of the second hole in the long axis direction. According to an embodiment of the present invention, the maximum length of the first optical pattern may be in a range of 2.4 times to 2.6 times based on the length of the long axis of the first light emitting device, and the length of the long axis of the second optical pattern may be in a range of 3.6 times to 3.8 times based on the length of the long axis of the second light emitting device. An illumination device according to an embodiment of the present invention includes: a substrate; a reflective layer disposed on the substrate; a light source passing through the reflective layer and disposed on the substrate; a resin layer disposed on the reflective layer; and an optical pattern disposed on the resin layer, wherein the light source includes a first light emitting device and a second light emitting device spaced apart from the first light emitting device, wherein the first and second light emitting devices may include a different number of LED chips, and a length in a long axis direction of the first light emitting device may be different from a length in a long axis direction of the second light emitting device.
According to an embodiment of the present invention, the first light emitting device includes a first lead frame, a second lead frame, and a third lead frame, which are disposed at both sides of the first lead frame and have the same area as each other. The second light emitting device may include a fourth lead frame and a fifth lead frame, an area of the fifth lead frame being different from an area of the fourth lead frame. According to an embodiment of the present invention, a first light emitting device includes: a body in which the first, second, and third lead frames are bonded to a bottom of the cavity; and a plurality of LED chips on a first lead frame disposed in the first cavity, wherein the cavity is disposed on a front surface of the body, the body includes a first side facing the substrate, and each of the first, second, and third lead frames may include a bonding portion bent toward the first side of the body. According to an embodiment of the present invention, the second light emitting device may include: a second body, wherein a fourth lead frame and a fifth lead frame are disposed at the bottom of the second cavity; at least one LED chip arranged on a fourth lead frame arranged on the bottom of the second cavity; a bonding member bonded between the fourth lead frame and the LED chip; and a first wiring having both ends connected between the bonding member and the fourth lead frame. According to an embodiment of the present invention, a second wiring connecting the fifth lead frame with the LED chip of the second light emitting device is included, wherein the second wiring includes a sub-wiring having multi-level contacts on an upper surface of the fifth lead frame.
An illumination device according to an embodiment of the present invention includes: a substrate; a reflective layer disposed on the substrate; a light source passing through the reflective layer and disposed on the substrate; a resin layer disposed on the reflective layer; and an optical pattern disposed on the resin layer, wherein the light source includes M first light emitting devices and N second light emitting devices spaced apart from the M first light emitting devices, wherein M is a natural number greater than N, wherein a length of a long axis of the first light emitting device is greater than a length of a long axis of the second light emitting device, and a maximum width of the resin layer overlapping in a direction of the long axis of the second light emitting device passing through a center of the second light emitting device may be in a range of 2 times to 2.2 times the length of the long axis of the first light emitting device.
According to an embodiment of the present invention, the resin layer may include: a first region having a minimum first width, in which a plurality of first light emitting devices are arranged; and a second region having a maximum second width in which at least one second light emitting device is disposed, wherein the second width is smaller than the first width and larger than a length of the second light emitting device in a long axis direction, wherein the second width is smaller than 2.2 times the length of the long axis of the second light emitting device, and the second region has the second width and may extend from the second light emitting device to a length more than 5 times the width of a short axis of the second light emitting device in a light exit direction of the second light emitting device. According to the embodiment of the present invention, the second light emitting device may be disposed at a position closest to the side surface of the resin layer among the first light emitting device and the second light emitting device. According to an embodiment of the present invention, the optical pattern may include: a first optical pattern overlapping a portion of each of the first light emitting devices in a vertical direction; and a second optical pattern overlapping a portion of the second light emitting device in a vertical direction, wherein the second optical pattern may be disposed closest to a side surface of the resin layer among the first and second optical patterns.
Technical effects
According to the embodiments of the present invention, it is possible to illuminate an edge area having a relatively narrow width with an illumination module having a uniform light distribution. According to an embodiment of the present invention, by providing the light emitting devices having a relatively small length in the edge region having a relatively narrow width in the lighting module, it is possible to provide uniform surface illumination for regions having different widths.
According to the embodiments of the present invention, it is possible to provide uniform surface illumination over the entire area of the resin layer by using the light emitting device having the light sources of different lengths. According to the embodiments of the present invention, by providing optical patterns of different areas on light emitting devices having light sources of different sizes, hot spots over the entire area of the resin layer can be suppressed. According to the embodiments of the present invention, the reliability of the lighting module and the lighting apparatus having various shapes can be improved.
Drawings
Fig. 1 and 2 are examples of plan views of a lighting device according to an embodiment of the present invention.
Fig. 3 is a partially enlarged view of the lighting device of fig. 1.
Fig. 4 (a) and 4 (B) are examples of a plan view and a cross-sectional side view of the first optical pattern of fig. 3.
Fig. 5 (a) and 5 (B) are examples of a plan view and a cross-sectional side view of the second optical pattern of fig. 3.
Fig. 6 is a side sectional view taken along line A1-A2 of the lighting device of fig. 3.
Fig. 7 is a partial enlarged view of the lighting module of fig. 6.
Fig. 8 is an example of a front view of a first light emitting device of a lighting apparatus according to an embodiment of the present invention.
Fig. 9 is an example of a cross-sectional view taken along line B1-B2 of the first light emitting device of fig. 8.
Fig. 10 is an example of a bottom view of the first light emitting device of fig. 8.
Fig. 11 is an example of a front view of a second light emitting device of the lighting apparatus according to the embodiment of the present invention.
Fig. 12 is an example of a sectional view taken along line C-C of the second light emitting device of fig. 11.
Fig. 13 is an example of a bottom view of the second light emitting device of fig. 11.
Fig. 14 is a partially enlarged view of the second light emitting device of fig. 11.
Fig. 15 is a view comparing a first light emitting device and a second light emitting device of a substrate according to an embodiment of the present invention.
Fig. 16 is a view showing an example of a plan view of a vehicle having the lighting device of the present invention.
Fig. 17 is an example of a tail lamp of a vehicle to which the lighting device of fig. 16 is applied.
Detailed Description
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
The technical idea of the present invention is not limited to certain embodiments to be described, but may be implemented in various other forms, and one or more components may be selectively combined and used instead within the scope of the technical idea of the present invention. Furthermore, terms (including technical terms and scientific terms) used in the embodiments of the present invention may be interpreted in a meaning that is generally understood by those of ordinary skill in the art to which the present invention belongs, and terms (such as terms defined in a dictionary) that are generally used should be able to be interpreted in consideration of the meaning of the context of the related art, except as specifically defined and explicitly described. In addition, terms used in the embodiments of the present invention are used to explain the embodiments and are not intended to limit the present invention. In this specification, the singular form may also include the plural form unless otherwise specifically stated in the wording, and in the case where at least one (one or more) of a and B, C is stated, it may include one or more of all combinations that may be combined with a, B and C. In describing the components of embodiments of the present invention, terms such as first, second, a, B, (a), and (B) may be used. Such terms are only used to distinguish one component from another component, and do not define the attributes, sequences, steps, or the like of the corresponding constituent elements by the terms. Also, when one element is described as being "connected," "coupled" or "coupled" to another element, the description may include not only direct connection, coupling or coupling to the other element but also connection, coupling or coupling through another element between the element and the other element. Further, in the case where it is described that each component is formed or disposed "above (upper)" or "below (lower)", the description may include not only two components directly contacting each other but also one or more other components formed or disposed between the two components. Further, when described as "above (upper)" or "below (lower)", it may refer to a downward direction and an upward direction with respect to one element. The lighting device according to the present invention can be applied to various lamp devices requiring illumination, such as a vehicle lamp, a home lighting device, or an industrial lighting device. For example, when applied to a vehicle lamp, it may be applied to a head lamp, a side lamp, a fog lamp, a tail lamp, a brake lamp, a daytime running lamp, an interior lamp, a door contour (door lamps), a rear combination lamp, a back-up lamp, and the like. The lighting device of the present invention can be applied to indoor advertising devices, outdoor advertising devices, display devices, and various electric vehicle fields, and furthermore, it can be applied to all lighting-related fields or advertising-related fields that are currently developed or commercialized or that can be implemented according to future technical developments.
Fig. 1 and 2 are examples of plan views of an illumination apparatus according to an embodiment of the present invention, fig. 3 is a partially enlarged view of the illumination apparatus of fig. 1, fig. 4 (a) and 4 (B) are examples of plan views and sectional side views of a first optical pattern of fig. 3, fig. 5 (a) and 5 (B) are examples of plan views and sectional side views of a second optical pattern of fig. 3, fig. 6 is a side sectional view taken along line A1-A2 of the illumination apparatus of fig. 3, fig. 7 is a partially enlarged view of an illumination module of fig. 6, fig. 8 is an example of a front view of a first light emitting device of the illumination apparatus according to an embodiment of the present invention, fig. 9 is an example of a sectional view taken along line B1-B2 of the first light emitting device of fig. 8, fig. 10 is an example of a bottom view of the first light emitting device of fig. 8, fig. 11 is an example of a front view of a second light emitting device of the illumination apparatus according to an embodiment of the present invention, fig. 12 is an example of a second light emitting device of fig. 11 is an example of a bottom view of a second light emitting device of the illumination apparatus according to an embodiment of the present invention, fig. 11 is an enlarged view of the second light emitting device of the present invention, fig. 13 is an example of the present invention, and fig. 15 is a second light emitting device is a comparison drawing with fig. 11, and fig. 15, fig. 11 is a second light emitting device of the second light emitting device.
Referring to fig. 1 to 7, a lighting apparatus 400 according to an embodiment of the present invention may include a light source having a plurality of light emitting devices 100 and 102. At least one of the light emitting devices 100 and 102 may have a length different from that of the other light emitting devices. At least one of the light emitting devices 100 and 102 may have a size or volume smaller than that of the other light emitting devices. The area of the light emitting surface of at least one of the light emitting devices 100 and 102 may be different from the area of the light emitting surface of the other light emitting device. The area of the light emitting surface of at least one of the light emitting devices 100 and 102 may be smaller than the area of the light emitting surface of the other light emitting device.
As shown in fig. 1, in the lighting apparatus 400, the diffusion layer 430 is disposed at an upper portion, the plurality of first light emitting devices 100 are arranged in the first region R1, and at least one of the second light emitting devices 102 may be disposed in the second region R2 as a corner region. The first light emitting devices 100 may emit light in the same direction or in at least one different direction. The second light emitting device 102 may be disposed at a position closest to the outer side surface S1 or at a distance closest to the first and second light emitting devices 100 and 102. As shown in fig. 3, the minimum distance G1 between the second light emitting device 102 and the outer side surface S1 may be in a range of 2 times or less (e.g., 0.5 times to 1.5 times) the length D11 of the second light emitting device 102.
As shown in fig. 2 and 3, in the lighting apparatus 400A, the diffusion layer 430 is disposed at an upper portion, or the resin layer 420 (refer to fig. 5) is disposed at a lower portion, and the plurality of first light emitting devices 100 are arranged in the first region R1, the width of the first region R1 is greater than or equal to the first width W1, and the plurality of second light emitting devices 102 may be arranged in the second region R2 having the thin second width W2. The second region R2 may extend to a third width W3, the third width W3 being smaller than the second width W2 in the light emitting side direction of the second light emitting device 102. One or more engaging grooves 430 may be disposed to surround the lighting device 400A, and a through hole 405 may be disposed in the lighting device 400A, the through hole 405 being larger than the interval between the plurality of first light emitting devices 100.
As shown in fig. 1 and 2, when viewed from a top view of the illumination apparatuses 400 and 400A, the first light emitting device 100 is disposed in a first region R1, the first region R1 having a length of at least the first width W1 or more. The second light emitting device 102 may be disposed in the second region R2, the second region R2 having a maximum length of the second width W2. The first width W1 may be a width of the substrate 401 or the resin layer 402 on the substrate 401 disposed in the first region R1, and the second width W2 may be a width of the substrate 401 or the resin layer 402 on the substrate 401 disposed in the second region R2. The first width W1 may be more than three times the length D1 of the first light emitting device 100 in the first region R1. The second width W2 may be 2.2 times or less (e.g., in a range of 2 to 2.2 times) the length D1 of the second light emitting device 102 in the second region R2. The second region R2 has a maximum width W2 overlapping in a long axis direction of the second light emitting device 102 passing through the center of the second light emitting device 102 on the resin layer 402, and the maximum width W2 of the second region R2 may be 2.2 times or less (e.g., in a range of 2 times to 2.2 times) the length of the long axis of the first light emitting device 100. The first and second regions R1 and R2 may be regions where the substrate 401 and/or the resin layer 420 have the second width W2. The lengths D1 and D11 of the first and second light emitting devices 100 and 102 may be lengths in the long axis direction.
In the light emitting devices 400 and 400A, even though the width of the edge portion having the second region R2 is narrow in various shapes of lamp structures, one or more second light emitting devices 102 may be provided and the distribution of the surface light over the entire region of the light emitting devices 400 and 400A may be uniformly provided. Here, the length in the direction in which light is emitted from the second light emitting devices 102 in the second region R2 may have a longer length of five times or more the width H01 (refer to fig. 12) of the short axis of the second light emitting device 102, and at least one second light emitting device 102 may be disposed along the second region R2. Here, the first light emitting areas 100 may be arranged in at least one row on the substrate 401 in the second direction Y, or may be arranged in two or more rows, and the first light emitting devices 100 arranged in one or more rows or two or more rows may be disposed in the first direction X of the substrate 401, or may be disposed in different directions. The first light emitting devices 100 may be arranged in an m × n matrix, and m, n may be integers of 2 or more.
As shown in fig. 3 and 6, the lighting apparatus 400 may include a light source having a plurality of light emitting devices 100 and 102 and a resin layer 420 covering the light source. The lighting apparatus 400 may include a substrate 401 supporting the light emitting devices 100 and 102 and a resin layer 420. The lighting device 400 may include at least one of a diffusion layer 430, optical patterns 425, 426, and/or a light emitting layer on the resin layer 420. The lighting device 400 may include a reflective layer 410 disposed between the substrate 401 and the resin layer 420. The lighting device 400 according to the embodiment of the present invention may emit light emitted from the light emitting devices 100 and 102 as surface light. The lighting device 400 may be defined as a light emitting unit or a light source module. The light source may include a plurality of arranged first light emitting devices 100 and at least one second light emitting device 102. The light source includes M first light emitting devices 100 and N second light emitting devices 102 spaced apart from the M first light emitting devices 100, where M and N are natural numbers and may have the following relationship: m > N. The second light emitting device 102 may have a length D11, and the length D11 is less than the length D1 of each of the first light emitting devices 100. The upper surface area of the second light emitting device 102 may be smaller than that of each of the first light emitting devices 100. The area of the light emitting surface 8A of the second light emitting device 102 may be smaller than the area of the light emitting surface 81 of each first light emitting device 100. The light emitting intensity of the light emitted from the second light emitting device 102 may be lower than the light emitting intensity of the light emitted from each of the first light emitting devices 100. The number of the LED chips 3 (refer to fig. 11) in the second light emitting device 102 may be different from the number of the LED chips 71 and 72 disposed on at least one first light emitting device 100, and may be, for example, smaller than the number of the LED chips 71 and 72 of the first light emitting device 100.
Hereinafter, each configuration of the lighting apparatus 400 will be described with reference to fig. 7 and 8.
< substrate 401>
Referring to fig. 6 and 7, the substrate 401 may include a Printed Circuit Board (PCB). For example, the substrate 410 may include at least one of a resin-based Printed Circuit Board (PCB), a PCB having a metal core, a flexible PCB, a ceramic PCB, or an FR-4 substrate. When the substrate 410 is provided as a metal core PCB having a metal layer disposed at the bottom, the heat dissipation efficiency of the light emitting devices 100 and 102 may be improved. The substrate 401 may be electrically connected to the light emitting devices 100 and 102. A wiring layer (not shown) is included on the substrate 401, and the wiring layer may be electrically connected to the light emitting devices 100 and 102. When the plurality of light emitting devices 100 and 102 are arranged on the substrate 401, the plurality of light emitting devices 100 and 102 may be connected in series, in parallel, or in series and parallel through the wiring layer. The substrate 401 may serve as a base layer or a support member disposed under the light emitting devices 100 and 102 and the resin layer 420. Here, the first and second light emitting devices 100 and 102 may be driven independently of each other. The upper surface of substrate 401 may have an X-Y plane. The upper surface of substrate 401 may be flat or have a curved surface. The thickness of the substrate 401 may be a height in the vertical direction or the Z direction. Here, in the X-Y plane, the X direction may be a first direction, and the Y direction may be a second direction. The Z direction may be a direction orthogonal to the first direction X and the second direction Y. The plurality of first light emitting devices 100 may be arranged to have a constant pitch in a direction in which light is emitted on the substrate 401, without being limited thereto. The substrate 401 may be provided in a straight bar shape or a curved bar shape along the longer length direction. The substrate 401 may include a light transmitting material through which light is transmitted through the upper and lower surfaces. The light transmitting material may include at least one of polyethylene terephthalate (PET), polystyrene (PS), and Polyimide (PI). For example, the substrate 401 may include a reflective layer 410. The reflective layer 410 may be an insulating layer or a layer of a reflective material that protects a circuit pattern having pads provided on the substrate 401.
< light emitting devices 100 and 102>
Referring to fig. 1 to 5, the light emitting devices 100 and 102 are disposed on a substrate 401 and emit light in a first direction X. The light emitting devices 100 and 102 emit light having the highest intensity through the emission surfaces 81 and 8A. The light emitting devices 100 and 102 may have emission surfaces 81 and 8A through which light is emitted, and the emission surfaces 81 and 8A are disposed in the third direction Z or the vertical direction with respect to the horizontal upper surface of the substrate 401, for example. The emitting surfaces 81 and 8A may be vertical planes, or may include a concave surface or a convex surface. As shown in fig. 15, for example, the first light emitting device 100 may be bonded to the first and second pads 453 and 454 provided on the substrate 401 using the bonding member 250, and the second light emitting device 102 may be bonded to the third and fourth pads 455 and 456 using the bonding member 250. The first and second light emitting devices 100 and 102 may be electrically connected to the substrate 401. The coupling member 250 is a conductive material, and may be a soldering material or a metal material. The light emitting devices 100 and 102 may emit at least one of blue, red, green, ultraviolet (UV) and infrared rays, and the light emitting devices 100 and 102 may include LED chips emitting at least one of white, blue, red, green and infrared rays. The light emitting devices 100 and 102 may be a side view type having a bottom electrically connected to the substrate 401, without being limited thereto. As another example, the light emitting devices 100 and 102 may be LED chips or top-down type packages. Some of the light emitted through the emission surfaces 81 and 8A of the light emitting devices 100 and 102 may travel in a direction parallel to the upper surface of the substrate 401, be reflected by the reflective layer 410, or travel in a direction of the upper surface of the resin layer 420.
As shown in fig. 8 and 9, a length D1 of the first light emitting device 100 in the second direction Y may be greater than a width H0 in the first direction Y. For example, in the first light emitting device 100, the length D1 may be at least twice (e.g., between 3 times and 4.2 times) the width H0. Since the first light emitting device 100 has a longer length in the second direction Y, the light emitting surface of the light emitting device 100 in the first direction X orthogonal to the second direction Y may have a larger area and may irradiate a larger area.
As shown in fig. 11 and 12, the length D11 of the second light emitting device 102 in the second direction Y may be greater than the width H01 in the first direction X. For example, in the second light emitting device 102, the length D11 may be less than or equal to twice the width H01 (e.g., in a range of 1.4 times to 2 times). The width H01 of the second light emitting device 102 is set to be greater than or equal to a certain level and the longer length D11 in the second direction Y is set to be less than the length D1 of the first light emitting device 100, so that a region having a narrower width can be irradiated.
As shown in fig. 8 and 11, for example, the thicknesses T1 and T2 of the light emitting devices 100 and 102 may be 3mm or less (e.g., in the range of 0.8mm to 2 mm). The thickness T1 of the first light emitting device 100 may be in a range of 1.3mm to 1.5mm, and the thickness T2 of the second light emitting device 102 may be formed to be equal to or greater than the thickness T1 of the first light emitting device 100 (e.g., may be in a range of 1.4mm to 1.5 mm). The thickness T1 of the first light emitting device 100 and the thickness T2 of the second light emitting device 102 are vertical heights, and a difference between the thickness T1 and the thickness T2 may be in a range of 0.5mm to 0.9 mm. Since the size of the second light emitting device 102 is relatively small, a thicker body 1 can be provided and the body 1 is stably joined to the lead frames 5 and 6. The length D1 of the first light emitting device 100 in the second direction Y may be 3 times or more (e.g., in a range of 3 times to 5 times) the thickness T1 of the first light emitting device 100. The length D11 of the second light emitting device 102 in the second direction Y may be three times or less (e.g., in a range of 2 to 3 times) the thickness T2 of the second light emitting device 102.
< reflective layer 410>
As shown in fig. 6 and 7, the reflective layer 410 may be a layer separately provided on the substrate 401 or a layer protecting the upper portion of the substrate 401. For example, the reflective layer 410 may be disposed between the substrate 401 and the resin layer 420. The reflective layer 410 may be provided in the form of a film having a metallic material or a non-metallic material. The reflective layer 410 may be adhered to the upper surface of the substrate 401. The reflective layer 410 may have an area smaller than the upper surface area of the substrate 401. The reflective layer 410 may be spaced apart from the edge of the substrate 401, and the resin layer 420 may be adhered to the substrate 401 in the spaced-apart region. In this case, the edge portion of the reflective layer 410 can be prevented from peeling off. The reflective layer 410 may include holes 417 and 417A, and lower portions of the light emitting devices 100 and 102 are disposed in the holes 417 and 417A. In the holes 417 and 417A of the reflective layer 410, the upper surface of the substrate 401 is exposed and a portion to be bonded with the lower portions of the light emitting devices 100 and 102 may be provided. The sizes of the holes 417 and 417A may be the same as or larger than the sizes of the light emitting devices 100 and 102, without being limited thereto. The first hole 417 provided with the first light emitting device 100 may be larger than the second hole 417A provided with the second light emitting device 102, and for example, the area of the first hole 417 may be 1.5 times or more (e.g., in the range of 1.5 times to 2.2 times) the area of the second hole 417A. The length of the first hole 417 in the long axis direction may be 2.4 times or more (for example, in a range of 2.4 times to 2.6 times) the length of the second hole 417A in the long axis direction. Due to the difference in length or area, the first and second light emitting devices 100 and 102 may be easily received in the respective holes 417 and 417A, and a problem of exposing the bonding member 250 to the outside may be reduced.
The reflective layer 410 may be in contact with the upper surface of the substrate 401, or may be adhered between the resin layer 420 and the substrate 401, without being limited thereto. Here, when a highly reflective material is coated on the upper surface of the substrate 401, the reflective layer 410 may be removed. The reflective layer 410 may be formed to have a thickness less than that of the light emitting devices 100 and 102. The thickness of the reflective layer 410 may include a range of 0.2mm ± 0.02 mm. The lower portions of the light emitting devices 100 and 102 may pass through the holes 417 and 417A of the reflective layer 410, and the upper portions of the light emitting devices 100 and 102 may protrude. The emission surfaces 81 and 8A of the light emitting devices 100 and 102 may be disposed in a direction perpendicular to the upper surface of the reflective layer 410.
The reflective layer 410 may include a metallic material or a non-metallic material. The metal material may include a metal such as aluminum, silver, or gold. The non-metallic material may comprise a plastics material or a resin material. The resin material may include a reflective material, such as a metal oxide (e.g., tiO) in a silicone or epoxy resin 2 、Al 2 O 3 、SiO 2 ). The reflective layer 410 may be implemented as a single layer or a plurality of layers, and light reflection efficiency may be improved by such a layer structure. The reflective layer 410 according to an embodiment of the present invention reflects incident light to increase the amount of light such that the light is emitted with uniform distribution. As another example of the illumination apparatus, the reflective layer 410 may be removed from the substrate 401. For example, the resin layer 420 may be disposed on the substrate 401 without the reflection layer 410, and the resin layer 420 may be in contact with the upper surface of the substrate 401.
< resin layer 420>
The resin layer 420 may be disposed on the substrate 401. The resin layer 420 may face or be adhered to the substrate 401. The resin layer 420 may be disposed on all or a portion of the upper surface of the substrate 401. The lower surface area of the resin layer 420 may be equal to or less than the upper surface area of the substrate 401. The resin layer 420 may be formed of a transparent material and may guide or diffuse light. The resin layer 420 may be formed of a resin-based material, and may include a resin material such as a silicone resin or an epoxy resin, or a UV-curable resin material. Such a resin material can be used instead of a light guide plate, and facilitates adjustment of the refractive index and adjustment of the thickness. Further, the resin layer 420 uses the above oligomer as a main material, and IBOA, a diluent monomer, and GMA are mixed to control hardness, heat resistance, light transmittance, inhibit adhesion, and prevent oxidation. The resin layer 420 may contain a photoinitiator and a light stabilizer to control curing and inhibit discoloration.
Since the resin layer 420 is provided as a layer for guiding light as a resin, it may be provided to have a thickness thinner than that of glass and may be provided as a flexible board. The resin layer 420 may emit a point light source emitted from the light emitting devices 100 and 102 in the form of a line light source or surface light. Beads (not shown) may be included in the resin layer 420, and the beads may diffuse and reflect incident light to increase the amount of light. The beads may be arranged in an amount of 0.01% to 0.3% based on the weight of the resin layer 420. The beads may be made of a material selected from the group consisting of silicon, silica, glass bubbles, polymethylmethacrylate (PMMA), polyurethane, zn, zr, al 2 O 3 And acrylic acid, and the particle size of the beads may be in the range of about 1 μm to about 20 μm, without being limited thereto. Since the resin layer 420 is disposed on the light emitting devices 100 and 102, it is possible to protect the light emitting devices 100 and 102 and reduce loss of light emitted from the light emitting devices 100 and 102. The light emitting devices 100 and 102 may be buried under the resin layer 420.
The resin layer 420 may be in contact with the surfaces of the light emitting devices 100 and 102, and may be in contact with the emission surfaces 81 and 8A of the light emitting devices 100 and 102. A portion of the resin layer 420 may be disposed in the holes 417 and 417A of the reflective layer 410. A portion of the resin layer 420 may contact the upper surface of the substrate 401 through the holes 417 and 417A of the reflective layer 410. Accordingly, a portion of the resin layer 420 is in contact with the substrate 401, thereby fixing the reflective layer 410 between the resin layer 420 and the substrate 401.
Referring to fig. 7, the thickness Z1 of the resin layer 420 may be 1.8mm or more (e.g., in the range of 1.8 to 2.5 mm). When the thickness Z1 of the resin layer 420 is thicker than the above range, the luminous intensity may be decreased, and it may be difficult to provide a flexible module due to an increase in the thickness of the module. When the thickness Z1 of the resin layer 420 is less than the above range, it is difficult to provide surface light having uniform luminous intensity. A length of the resin layer 420 in the first direction X may be the same as a length of the substrate 401 in the first direction X, and a width of the resin layer 420 in the second direction Y may be equal to a width Y1 of the substrate 401 in the second direction Y. Accordingly, each side surface of the resin layer 420 may be disposed on the same plane as each side surface of the substrate 401. The resin layer 420 may be provided to cover the size of the plurality of light emitting devices 100 and 102 or may be connected to each other. The resin layer 420 may be divided into a size to cover each of the light emitting devices 100 and 102. The upper surface of the resin layer 420 may have a first adhesive force. The upper surface of the resin layer 420 may have a first adhesive force and may be adhered to the light transmission layer 415.
< light transmission layer 415>
The light transmissive layer 415 may be an adhesive material such as silicone or epoxy, or may include a diffusive material. The diffusing material may include at least one of Polyester (PET), polymethylmethacrylate (PMMA), and Polycarbonate (PC). The light transmissive layer 415 may include adhesive regions adhered to the upper surface of the resin layer 420 and non-adhesive regions that are not adhered to the upper surface of the resin layer 420 or spaced apart from the upper surface of the resin layer 420. The light transmissive layer 415 is disposed at 60% or more (e.g., 80% or more) of the upper surface area of the resin layer 420 so that the diffusing layer 430 is in close contact with the resin layer 420, or when a lower diffusing layer (not shown) is disposed between the light transmissive layer 415 and the resin layer 420, the diffusing layer 430 may be in close contact with the lower diffusing layer (not shown).
< optical patterns 425 and 426>
The optical patterns 425 and 426 may face the upper surface of the resin layer 420. The optical patterns 425 and 426 may overlap each of the light emitting devices 100 and 102 in a vertical direction or a third direction Z. Each of the plurality of optical patterns 425 and 426 may vertically overlap each of the plurality of light emitting devices 100 and 102. The optical patterns 425 and 426 may be disposed between the resin layer 420 and the diffusion layer 430. When the diffusion layer 430 is provided in plurality, the optical patterns 425 and 426 may be provided on the lower surfaces of the plurality of diffusion layers or between the plurality of diffusion layers. The optical patterns 425 and 426 may be disposed in the light transmissive layer 415. The optical patterns 425 and 426 may penetrate the light transmission layer 415 and may be in contact with at least one of the resin layer 420 and the diffusion layer 430. The optical patterns 425 and 426 may include gap portions 427 and 427A spaced apart from the inner surface of the light transmissive layer 415 and/or the upper surface of the resin layer 420. The gap portions 427 and 427A may be set to have a different refractive index from the optical patterns 425 and 426, thereby improving light diffusion efficiency. For example, the lower surfaces S13 of the optical patterns 425 and 426 may be spaced apart from the upper surface of the resin layer 420, or may be in contact with the upper surface of the resin layer 420. The gap portions 427 and 427A may be air regions or vacuum regions.
As shown in fig. 3, 6, and 7, a distance between adjacent first optical patterns 425 may be smaller than a distance between adjacent first light emitting devices 100. A distance between the different first and second optical patterns 425 and 426 may be smaller than a distance between the different first and second light emitting devices 100 and 102. The optical patterns 425 and 426 may be spaced apart from the outer side surface S1 (refer to fig. 3) of the resin layer 420. The optical patterns 425 and 426 may have the same shape as each other. The optical patterns 425 and 426 may be disposed on the first and second light emitting devices 100 and 102, respectively. The first optical pattern 425 may overlap each of the first light emitting devices 100 in a vertical direction. The second optical pattern 426 may vertically overlap the second light emitting device 102. The second optical pattern 426 may be disposed at the closest distance from the side surface of the resin layer 420 or the side surface closest to the resin layer 420 among the first and second optical patterns 425 and 426. The optical patterns 425 and 426 may be disposed higher than the upper surface of the resin layer 420. Each of the optical patterns 425 and 426 may be 50% or more of the upper surface area of each of the light emitting devices 100 and 102 or may be in the range of 50% to 800%. The optical patterns 425 and 426 may be areas printed with white material. For example, a composition comprising TiO may be used 2 、Al 2 O 3 、CaCO 3 、BaSO 4 And reflective ink of either silicon to print optical patterns 425 and 426. Optical patterns 425 and 426 reflect light throughThe light emitted through the emission surfaces 81 and 8A of the light emitting devices 100 and 102, thereby reducing the occurrence of hot spots on each of the light emitting devices 100 and 102. The optical patterns 425 and 426 may be printed by the light blocking pattern using a light blocking ink. The optical patterns 425 and 426 may be formed by printing on the lower surface of the diffusion layer 430. The optical patterns 425 and 426 are made of a material that does not block 100% of the amount of incident light, have a transmittance lower than a reflectance, and may function as a light blocking and diffusing function. The optical patterns 425 and 426 may be formed in a single layer or a plurality of layers, and may have the same pattern shape or different pattern shapes. The optical patterns 425 and 426 may have the same thickness as each other. The optical patterns 425 and 426 may have different thicknesses according to regions. The thickness of the optical patterns 425 and 426 may be thickest in the central region and thinner in the edge regions than in the central region. The optical patterns 425 and 426 may have a thickness proportional to the intensity of incident light.
The lower surface area of the optical patterns 425 and 426 is arranged to be more than 50% (e.g., in the range of 50% to 800% or in the range of 200% to 700%) of the upper surface area of the light emitting devices 100 and 102 to block incident light. Accordingly, the problem of making the light emitting devices 100 and 102 visible from the outside can be reduced, and hot spots on the areas of the light emitting devices 100 and 102 can be reduced, thereby providing uniform light distribution over the entire areas. The optical patterns 425 and 426 may be arranged in a hemispherical shape, an elliptical shape, or a circular shape based on the light emitting devices 100 and 102.
As shown in fig. 4 (a), the first optical pattern 425 covers an emission-side region of the upper surface of the first light emitting device 100, and may have a length C3 longer than a length D1 of the first light emitting device 100. The maximum length C3 of the first optical pattern 425 is a maximum length in a direction perpendicular to the light emission direction, and may be 8mm or more (for example, in a range of 8mm to 20mm, or in a range of 12mm to 18 mm). The maximum width B3 of the first optical pattern 425 is the maximum length in the light emission direction, and may be set in a range of 6mm or more (for example, in a range of 6mm to 15mm or in a range of 8mm to 13 mm). The maximum length C3 of the first optical pattern 425 may be less than the maximum width B3, for example, the maximum length C3 may be more than 1.2 times (e.g., in a range of 1.2 times to 1.7 times) the maximum width B3. Accordingly, the first optical pattern 425 disposed on the region where the light of the first light emitting device 100 is emitted may suppress the hot spot by blocking or reflecting the light. The area of the first optical pattern 425 may vary according to the distribution of the orientation angles of the first light emitting device 100.
As shown in fig. 5 (a), the second optical pattern 426 covers an emission-side region of the upper surface of the second light emitting device 102, and may have a length C31 longer than a length D11 of the second light emitting device 102. The length C31 of the second optical pattern 426 is a maximum length in a direction perpendicular to the light emission direction, and may be 6mm or more (e.g., in a range of 6mm to 15mm or in a range of 6mm to 12 mm). The width B31 of the second optical pattern 426 is the maximum length in the light emission direction, and may be set in a range of 8mm or more (for example, in a range of 8mm to 18mm or in a range of 8mm to 15 mm). The length C31 of the second optical pattern 426 may be smaller than the width B31, for example, the length C31 may be formed in a range of 1.2 times or more (e.g., in a range of 1.2 times to 1.7 times) the width B31.
As shown in fig. 4 (a), the maximum length C3 of the first optical pattern 425 may be 2.6 times or less (e.g., in a range of 2.4 times to 2.6 times) the length D1 of the first light emitting device 100 in the long axis direction Y. The maximum length C31 of the second optical pattern 426 may be 3.6 times or more (e.g., in a range of 3.6 times to 3.8 times) the length D11 of the second light emitting device 102 in the long axis direction Y. Accordingly, the second optical pattern 426 disposed on the region emitting the light of the second light emitting device 102 may suppress the hot spot by blocking or reflecting the light. The area of the second optical pattern 426 may vary according to the distribution of the orientation angles of the second light emitting devices 102. The length C31 of the second optical pattern 426 may be less than the length C3 of the first optical pattern 425, and for example, may be in a range of 0.9 times or less (e.g., in a range of 0.7 times to 0.9 times) the length C3. The width B31 of the second optical pattern 426 may be less than the length B3 of the first optical pattern 425, and may be, for example, 0.85 times or less (e.g., in the range of 0.68 to 0.82 times) the length B3.
As shown in fig. 4 (a), 4 (B), 5 (a), and 5 (B), the first and second optical patterns 425 and 426 may be stacked as a plurality of unit pattern layers M1, M2, and M3, and may include the same stacked structure. A portion of the first optical pattern 425 may be disposed on the first light emitting device 100, and a portion of the second optical pattern 426 may be disposed on the second light emitting device 102. For example, the first and second optical patterns 425 and 426 may be stacked in the order of the first unit pattern layer M1, the second unit pattern layer M2, and the third unit pattern layer M3 from top to bottom. The area of the second unit pattern layer M2 is smaller than that of the first unit pattern layer M1, and the area of the third unit pattern layer M3 or the lowermost pattern layer may be smaller than that of the second unit pattern layer M2. The first, second, and third unit pattern layers M1, M2, and M3 may overlap on the first and second light emitting devices 100 and 102, respectively, and may be disposed to have a gradually decreasing number of layers or a gradually thinner thickness as it goes toward an emission side or a region farther from the first and second light emitting devices 100 and 102. The first, second, and third unit pattern layers M1, M2, and M3 have different pattern shapes and/or different areas from each other, and may overlap in a vertical direction. The size of the reflection pattern Ma of the first unit pattern layer M1 is smaller than the size of the reflection pattern Mb of the second unit pattern layer M2, and may be arranged at a pitch smaller than the pitch of the reflection pattern Mb of the second unit pattern layer M2. The size of the reflection pattern Mb of the second unit pattern layer M2 is smaller than the size of the reflection pattern Mc of the third unit pattern layer M3, and may be arranged at a pitch smaller than the pitch of the reflection pattern Mc of the third unit pattern layer M3. Here, the area of the first unit pattern layer M1 disposed at the uppermost side of the first optical pattern 425 may be greater than the area of the first unit pattern layer M1 disposed at the uppermost side of the second optical pattern 426. An adhesive material M0 such as silicone or epoxy may be filled in the reflection patterns Ma, mb, mc of the first, second, and third unit pattern layers M1, M2, and M3 of the first and second optical patterns 425 and 426. Since the first and second optical patterns 425 and 426 are stacked on the light emitting devices 100 and 102 as the unit pattern layers M1, M2, and M3 having the multi-layered reflection patterns Ma, mb, and Mc, there is an effect of blocking light incident to the first and second optical patterns 425 and 426. Further, the first and second optical patterns 425 and 426 are disposed to have a thinner thickness as being adjacent to the light emitting devices 100 and 102, and a region distant from the light emitting devices 101 and 102 is disposed to have the thickest thickness, so that a difference in luminous intensity caused by a distance difference can be improved to a uniform luminous intensity.
As shown in fig. 7, the thickness Z3 of the optical patterns 425 and 426 may be 0.1 times or less (e.g., 0.05 times to 0.1 times) the thickness Z1 of the resin layer 420. The thickness Z3 of the optical patterns 425 and 426 may be 100 μm or more (e.g., in the range of 100 μm to 200 μm). When the thickness Z3 of the optical patterns 425 and 426 is less than the above range, there is a limit to reduce the hot spot, and when the thickness Z3 is greater than the above range, optical uniformity may be deteriorated. A distance Z4 between the upper surfaces of the light emitting devices 100 and 102 and the lower surfaces of the optical patterns 425 and 426 may be 0.4mm or more (e.g., in a range of 0.4mm to 0.6 mm). The distance Z0 between the upper surfaces of the light emitting devices 100 and 102 and the upper surface of the reflective layer 410 may be 0.8mm or more (e.g., in the range of 0.8mm to 1.4 mm). Regions of the optical patterns 425 and 426 may not vertically overlap regions of the light transmissive layer 415.
The optical patterns 425 and 426 may be disposed on each of the light emitting devices 100 and 102 with a size or area sufficient to prevent hot spots caused by light emitted in the emission direction of the light emitting devices 100 and 102. In addition, since the light emitting devices 100 and 102 emit light in a lateral direction (i.e., in the first direction X), the optical patterns 425 and 426 cover an area capable of improving light blocking efficiency due to the distribution of light pointing angles of the light emitting devices 100 and 102 and the reflection characteristics of light.
Here, the distance between the first light emitting devices 100 or the distance between the first and second light emitting devices 100 and 102 may be 25mm or more (e.g., in a range of 25mm to 30 mm), and may vary according to the characteristics of the light emitting devices 100 and 102.
As another example, the optical patterns 425 and 426 may be air regions of a concave portion formed by an etching process of the upper surface of the resin layer 420, or may include a light shielding layer provided with a light shielding material. The etched region may cover the emission surfaces of the light emitting devices 100 and 102, similar to the region of the optical pattern, and may have a range of 50% to 800% of the upper surface area of the light emitting devices 100 and 102.
< diffusion layer 430>
The diffusion layer 430 may be disposed on the resin layer 420. The lower surface of the diffusion layer 430 may include a first region S11 in which the light transmission layer 415 is disposed and a second region S12 in which the optical patterns 425 and 426 are disposed. The diffusion layer 430 may have optical patterns 425 and 426 printed thereon, and may be fixed to the resin layer 420 through the light transmission layer 415.
Here, when the lower diffusion layer (not shown) is disposed between the light transmission layer 415 and the resin layer 420, the lower diffusion layer may be adhered to the resin layer 420, for example, the upper surface of the resin layer 420 may be adhered to the lower diffusion layer by the first adhesion having the cilia. In this case, the diffusion layer 430 and/or the lower diffusion layer may be attached to the resin layer 420 by applying a predetermined pressure or pressure/heat.
The diffusion layer 430 may include at least one of a Polyester (PET) film, a Polymethylmethacrylate (PMMA) material, or Polycarbonate (PC). The diffusion layer 430 may be provided as a film made of a resin material such as silicone or epoxy. The diffusion layer 430 may include a single layer or a plurality of layers.
The thickness Z2 of the diffusion layer 430 is 25 μm or more, and may be, for example, in the range of 25 μm to 250 μm or in the range of 100 μm to 250 μm. The diffusion layer 430 may have the above thickness range and may set incident light to uniform surface light. The diffusion layer 430 and/or the lower diffusion layer may include at least one or more of a diffusing agent such as beads, a phosphor, and ink particles. For example, the phosphor may include at least one of a red phosphor, an amber phosphor, a yellow phosphor, a green phosphor, and a white phosphor. The ink particles may include at least one of a metallic ink, a UV ink, and a cured ink. The ink particles may be smaller in size than the phosphor. The surface color of the ink particles may be any one of green, red, yellow, and blue. The ink type can be selectively applied in PVC (polyvinyl chloride) ink, PC (polycarbonate) ink, ABS (acrylonitrile-butadiene-styrene copolymer) ink, UV resin ink, epoxy resin ink, silicone resin ink, PP (polypropylene) ink, water-based ink, plastic ink, PMMA (polymethyl methacrylate) ink, and PS (polystyrene) ink. The ink particles may include at least one of a metallic ink, a UV ink, and a cured ink.
In an embodiment of the present invention, the light diffused by the resin layer 420 may be transmitted through the light transmission layer 415 and may be emitted as surface light through the diffusion layer 430. In this case, the optical patterns 425 and 426 may prevent hot spots caused by incident light. In another example of the present invention, a layer of a reflective material or an upper substrate may be disposed on the resin layer 420. The layer of the reflective material or the upper substrate may face the upper surface of the resin layer 420, the light emitting devices 100 and 102 are arranged in at least one row or column, and each emission surface 81 and 8A of the light emitting devices 100 and 102 may be disposed at the same distance as one side of the resin layer 420 and may emit light through the one side of the resin layer 420.
Hereinafter, detailed structures of the first and second light emitting devices 100 and 102 will be described with reference to fig. 8 to 14. Referring to fig. 8 to 10, the first light emitting device 100 includes a body 10 having a cavity 15A, a plurality of lead frames 20, 30, and 40 in the cavity 15A, and a plurality of LED chips 71 and 72 disposed on at least one of the lead frames 20, 30, and 40. The first light emitting device 100 may be implemented as a side view type package, and may be applied to a mobile phone, a portable computer, various illumination fields, a vehicle lamp, or an indication apparatus. The length D2 of the body 10 in the first direction may be 4mm or more (e.g., in the range of 4mm to 7mm or in the range of 4.5mm to 6.5 mm). Since the body 10 provides a longer length D2 in the first direction, the emission side area or the light emitting area of the cavity 15A may be increased. The thickness T1 of the first light emitting device 100 may be 1.5mm or less (e.g., in the range of 0.6mm to 1.5 mm). The first light emitting device 100 may provide a relatively thin thickness T1, thereby reducing the thickness of a lighting module or lamp having the first light emitting device 100.
The body 10 may be bonded to the lead frames 20, 30, and 40. The body 10 may be formed of an insulating material. The body 10 may be formed of a resin-based insulating material, such as polyphthalamide (PPA), a silicone resin base, an epoxy resin base, or a thermosetting resin including a plastic material or a highly heat-resistant and light-resistant material. The body 10 may include a reflective material, for example, a resin material added with a metal oxide, and the metal oxide may include TiO 2 、SiO 2 And Al 2 O 3 At least one of (a). To illustrate the sides of the body 10, the body 10 may include first and second side portions 11 and 12 disposed at opposite sides in a thickness direction, and third and fourth side portions 13 and 14 disposed at opposite sides in a longitudinal direction. The first side 11 may be a bottom or bottom surface of the main body 10, and the second side 12 may be an upper surface of the main body 10. The front portion 15 of the body 10 may be a surface provided with the cavity 15A, and may be a surface emitting light. The rear side opposite to the front portion 15 may be a rear side surface of the first and second side portions 11 and 12. The body 10 may include a first body 10A provided with a cavity 15A and a second body 10B at a rear side of the first body 10A. The first body 10A may be disposed on the front 15 instead of the lead frames 20, 30, and 40 and around the cavity 15A. The second body 10B may be a portion supporting the lead frames 20, 30, and 40 and supporting the package.
The cavity 15A includes first to fourth inner side surfaces 11A, 12A, 13A and 14A opposite to the first to fourth sides 11, 12, 13 and 14, respectively, and the first to fourth inner side surfaces 11A, 12A, 13A and 14A may be disposed to be inclined with respect to the bottom of the cavity 15A. As shown in fig. 9, the depth H11 of the cavity 15A is a distance from the front 15 of the body 10 to the bottom of the cavity 15A, and may be, for example, in the range of 0.3mm ± 0.05 mm. When the depth H11 of the cavity 15A is smaller than the above range, it is difficult to control the beam angle, and when the depth H11 exceeds the range, there is a problem that the beam angle becomes narrow.
The plurality of lead frames 20, 30, and 40 may be disposed at the bottom of the cavity 15A, and a portion may be bent to extend to the first side 11 of the body 10. The plurality of lead frames 20, 30, and 40 may include a first lead frame 20 and second and third lead frames 30 and 40 spaced apart from the first lead frame 20. The first lead frame 20 may be disposed between the second lead frame 30 and the third lead frame 40.
The first lead frame 20 may include a first frame portion 21 disposed at the bottom center of the cavity 15A and a first joint portion 22 extending from the first frame portion 21 to the first side portion 11. The second lead frame 30 may include a second frame portion 31 disposed at one side of the bottom of the cavity 15A and a second engaging portion 32 extending from the second frame portion 31 in the direction of the first side portion 11. The third lead frame 40 may include a third frame portion 41 disposed at the other side of the bottom of the cavity 15A and a second engaging portion 32 extending from the third frame portion 41 in the direction of the first side portion 11.
A plurality of LED chips 71 and 72 are disposed on the first frame portion 21 of the first lead frame 20, and may be connected to the second frame portion 31 and the third frame portion 41 through wires 75 and 76, respectively. As shown in fig. 8, the first LED chip 71 may be connected to the first frame unit 21 through a bonding member 78, and may be connected to the second frame unit 31 through a wiring 75. The second LED chip 72 may be connected to the first frame portion 21 through a joint member 79, and may be connected to the third frame portion 41 through a wiring 76. The first and second LED chips 71 and 72 may be vertical chips. For example, the LED chips 71 and 72 may be selected from a red LED chip, a blue LED chip, a green LED chip, and a yellow-green LED chip. For example, the LED chips 71 and 72 may emit a red peak wavelength. The LED chips 71 and 72 may include at least one of II-VI compounds and III-V compounds. For example, the LED chips 71 and 72 may be formed of a compound selected from the group consisting of GaN, alGaN, inGaN, alInGaN, gaP, alN, gaAs, alGaAs, inP, and a mixture thereof. As another example, the first and second LED chips 71 and 72 may be arranged as flip chips on the first, second, and third frame portions 21, 31, and 41. At the bottom of the cavity 15A, separating portions 18 and 19 may be disposed between the first frame portion 21 and the second frame portion 31 and between the first frame portion 21 and the third frame portion 41, respectively. The separation portions 18 and 19 may be arranged parallel to or inclined to each other.
As shown in fig. 8 and 10, the first engaging part 22 may be provided at the first side part 11 of the body 10, i.e., it may be provided on the bottom surface of the second body 10B. In the first engaging portion 22, the first frame portion 21 may protrude toward the first side portion 11 of the main body 10 and be bent toward the rear. The first lead frame 20 may include a plurality of connection parts 25, 26, and 27 and a plurality of coupling holes H1 and H2 disposed between the plurality of connection parts 25, 26, and 27. The protrusions P1 and P2 of the body may be exposed through the coupling holes H1 and H2. The second engagement portion 32 of the second lead frame 30 is disposed on the first side portion 11 of the body 10 and may be bent toward the rear. The third engaging portion 42 is provided on the first side portion 11 of the main body 10 and may be bent toward the rear. The second coupling portion 32 includes the first extension portion 33 to increase a heat dissipation area, and the first extension portion 33 may be bent toward the third side 13 of the main body 10. The third coupling part 42 may include a second extension part 43 to increase a heat dissipation area, and the second extension part 43 may be bent toward the fourth side 14 of the body 10.
Here, the areas of the second lead frame 30 and the third lead frame 40 may be the same as each other. Alternatively, the areas of the second joining part 32 and the third joining part 42 may be the same as each other.
As shown in fig. 2, among the thicknesses of the main body 10, the thickness of the regions adjacent to the third and fourth side portions 13 and 14 may be thinner than the thickness of the central region of the main body 10. This means that the first side portion 11 of the body 10 may include a region 16, the region 16 protruding with respect to the recess regions 11B and 11C adjacent to the third and fourth side portions 13 and 14, and the second bonding portion 32 of the second lead frame 30 and the third bonding portion 42 of the third lead frame 40 may be disposed in the recess regions 11B and 11C. The length of the protruding area 16 in the first direction may be less than the length of the first frame 21. Further, in the first frame 21 of the first lead frame 20, the distance C4 between the LED chips 71 and 72 and the first inner side surface 11A is narrower than the distance C3 between the LED chips 71 and 72 and the second inner side surface 12A. Therefore, the LED chips 71 and 72 can transfer heat more effectively through the first bonding parts 22 extending in the direction of the first inner side surface 11A. The LED chips 71 and 72 may be disposed closer to the first side portion 11 than the second side portion 12. The length Y1 of the LED chips 71 and 72 in the third direction Z may be arranged in a range of 40% or more (e.g., in a range of 40% to 60%) of the width C1 of the bottom of the cavity 15A. Since the LED chips 71 and 72 are disposed in a large area having a long length in the first and second directions, heat dissipation efficiency can be improved and light efficiency can be improved. The width C1 of the first frame 21 exposed to the bottom of the cavity 15A in the third direction may be greater than the width C2 of the second frame 31. The difference C5 between the width C1 of the first frame 21 and the width C2 of the second frame 31 may be 0.1mm or more at maximum (for example, in the range of 0.1mm to 0.25 mm). This is to provide a narrower area when extending from the area where the first frame 21 is provided to the area where the second frame 31 and the third frame 41 are provided on the first inner side surface 11A. The narrower region may correspond to one corner of the LED chips 71 and 72. Therefore, it is possible to reduce loss of light emitted from each corner of the LED chips 71 and 72 in the outer region of the first side surface 11A adjacent to the third and fourth inner side surfaces 13A and 14A. The third side 13 and the third side 14 of the main body 10 may have concave portions 13B and 14B depressed inward, and the concave portions 13B and 14B are formed in the injection process of the main body 10 and may be inserted with the fingers of the support main body 10. The molding member 80 is disposed in the cavity 15A of the body 10, and the molding member 80 includes a light-transmitting resin such as a silicone resin or an epoxy resin, and may be formed in a single layer or a plurality of layers. When the LED chips 71 and 72 are red LED chips, impurities such as phosphors may not be contained in the molding member 80. As another example, a phosphor for changing the wavelength of emitted light may be included on the molding member 80 or disposed on the LED chips 71 and 72, and the phosphor excites some of the light emitted from the LED chips 71 and 72 to emit light of a different wavelength. The phosphor may be selectively formed of quantum dots, YAG, TAG, silicate, nitride, and oxynitride based materials. The phosphor may include at least one of a red phosphor, a yellow phosphor, and a green phosphor, without being limited thereto. The surface of the molding member 80 may be formed in a planar shape, a concave shape, a convex shape, etc., without being limited thereto. As another example, a light-transmitting film having a phosphor may be disposed on the cavity 15A, but the present disclosure is not limited thereto. A gate groove 16B may be formed at the rear side of the body 10. The upper portion of the body 10 may also form a lens, which may include a structure of a concave lens and/or a convex lens, and may adjust light distribution of light emitted by the first light emitting device 100. A semiconductor device such as a light receiving device or a protection device may be mounted on the body 10 or any one of the lead frames, and the protection device may be implemented as a thyristor, a zener diode, or a TVS (transient voltage suppression), and the zener diode protects the LED chips 71 and 72 from electrostatic discharge (ESD).
Referring to fig. 11 to 14, the second light emitting device 102 includes a body 1 having a cavity 1A, lead frames 5 and 6 disposed at the bottom of the cavity 1A of the body 1, and a third LED chip 3 disposed on a fourth frame portion 5A of a fourth lead frame 5.
The third LED chip 3 may be electrically connected to the fourth and fifth lead frames 5 and 6. The third LED chip 3 may be bonded to the fourth frame 5A of the fourth lead frame 5 by a bonding member 3D, and may be connected to the fifth frame portion 6A of the fifth lead frame 6 by a fourth wiring 3B. The areas of the fourth and fifth lead frames 5 and 6 may be different from each other. For example, the area of the fourth lead frame 5 may be larger than that of the fifth lead frame 6, thereby preventing the heat dissipation efficiency of the third LED chip 3 from being reduced in a small package. The fifth lead frame 5 may include a fifth bonding part 5B and a fifth extension part 5C extending to one side of the first side part S21 of the body 1. The sixth lead frame 6 may include a sixth engagement portion 6B and a sixth extension portion 6C extending to the other side of the first side portion S21 of the body 1.
Here, the bottom area of the fifth joining portion 5B may be larger than that of the sixth joining portion 6B. The bottom shape of the fifth engaging portion 5B may be different from the bottom shape of the sixth engaging portion 6B. The length K1 of the first portion 5B1 of the fifth joint 5B may be greater than the length K2 of the first portion 6B1 of the sixth joint 6B (e.g., the length K1 may be at least 1.5 times the length K2). The length K3 of the second portion 5B2 of the fifth joint 5B and its outside bend may be the same as the length K4 of the second portion 6B2 of the sixth joint 6B and its outside bend. Therefore, the area of the lower surface of the fifth bonding portion 5B of the fifth lead frame 5, on which the third LED chip 3 is disposed, is further increased, thereby increasing the heat dissipation area and the bonding area. The width K5 of the fifth and sixth extensions 5C and 6C may be 0.8 times or less (e.g., in the range of 0.4 to 0.8 times the lengths K3 and K4).
As shown in fig. 14, the third LED chip 3 may be connected to a bonding member 3D bonded to the third LED chip 3 through a third wiring 3A for double connection. One end of the third wiring 3A may be joined to the joining member 3D, and the other end may be joined to the fourth block 5A. Therefore, when the engaging member 3D is lifted from the fourth block 5A, the fourth block 5A can be connected to the third LED chip 3 through the third wiring 3A. Alternatively, when the third wiring 3A becomes hot, the fourth frame portion 5A may be connected to the third LED chip 3 through the bonding member 3D. Here, the portion 3D1 of the joining member 3D may protrude in the direction of the other end of the third wiring 3A, thereby providing a wide joining area for the one end of the third wiring 3A. The fourth wire 3B has multi-stage contacts with the fifth frame portion 6A, and may further include, for example, a sub-wiring 3C in which contacts jump to be spaced apart or extend in different directions.
Referring to fig. 9 and 11, the bottom width T3 of the cavity 15A of the first light emitting device 100 may be the same as the bottom width T4 of the cavity 1A of the second light emitting device 102. The heights H11 of the cavities 15A and 1A of the first and second light emitting devices 100 and 102 may be the same as each other. In the bottom lengths D3 and D31 of the cavities 15A and 1A of the first and second light emitting devices 100 and 102, the bottom length D31 may be 0.7 times or less (e.g., in a range of 0.4 to 0.7 times) the bottom length D3. The first, second, and third LED chips 71, 72, and 73 emit light of the same color wavelength and may have the same size. The first and second light emitting devices 100 and 102 may have the same widths H0 and H01 in the second direction. Here, the body 10 of the first light emitting device 100 may be defined as a first body, and the body 1 of the second light emitting device 102 may be defined as a second body. Further, the cavity 15A of the first light emitting device 100 may be defined as a first cavity, and the cavity 1A of the second light emitting device 102 may be defined as a second cavity. Here, the length D11 of the second light emitting device 102 is arranged in a range of 2.5 times or less (e.g., 1.5 times to 2.5 times) the thickness T2 such that the reduction of the thickness T2 of the body 1 is minimized and only the length D11 of the body 1 is reduced, which may be applied to the second region R2 (fig. 1) having a thinner width.
As shown in fig. 15, in the first light emitting device 100, each of the first, second, and third lead frames 20, 30, and 40 may be bonded to the plurality of pads 452, 453, and 454 of the substrate 401 and the bonding member 250. In the second light emitting device 102, each of the fourth and fifth lead frames 5 and 6 may be bonded to the plurality of pads 455 and 456 of the substrate 401 by the bonding members 250. The first and second light emitting devices 100 and 102 are disposed on the substrate 401, and the first and second light emitting devices 100 and 102 may have different numbers of LED chips 71, 72, and 73. The first and second light emitting devices 100 and 102 may have different lengths. For example, the length of the second light emitting device 102 may be shorter than the length of the first light emitting device 100.
Fig. 16 is a plan view of a vehicle to which a lamp of a lighting device according to an embodiment of the present invention is applied, and fig. 17 shows a view of an example of a tail lamp of the vehicle of fig. 16.
Referring to fig. 16 and 17, a moving object or a headlight 850 in a vehicle 900 may include more than one lighting module and individually control driving timings of the lighting modules to be used as a typical headlight, and may provide additional functions such as a welcome lamp or a celebratory effect when a driver turns on a door. The lamp can be applied to daytime running lamps, high beam lamps, dipped headlights, fog lamps or turn signal lamps. In vehicle 900, tail light 800 may be arranged with a plurality of light units 810, 812, 814 and 816 supported by housing 801. For example, the lamp units 810, 812, 814, and 816 may include a first lamp unit 810 disposed at an outer side, a second lamp unit 814 disposed around an inner circumference of the first lamp unit 810, and a third lamp unit 814 and a fourth lamp unit 816 respectively disposed at an inner side of the second lamp unit 814. The first lamp unit 810, the second lamp unit 812, the third lamp unit 814, and the fourth lamp unit 816 may selectively apply the lighting device disclosed in the embodiments, and may place a red lens cover or a white lens cover for lighting characteristics of the lamp units 810, 812, 814, and 816 outside the lighting device. The lighting devices disclosed in the embodiments applied to the lamp units 810, 812, 814 and 816 can emit uniformly distributed surface light. The first and second lamp units 810 and 812 may be provided in at least one of a curved shape, a straight shape, an angular shape, an inclined shape, and a planar shape, or a hybrid structure thereof. One or more of the first lamp unit 810 and the second lamp unit 812 may be provided in the respective rear lamps. The first lamp unit 810 may be provided as a tail lamp, the second lamp unit 812 may be provided as a brake lamp, the third lamp unit 814 may be provided as a backup lamp, and the fourth lamp unit 816 may be provided as a turn signal lamp. The configuration and location of these lights can vary.
The features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like shown in the embodiments can be combined or modified for other embodiments by a person having ordinary skill in the art to which the embodiments belong. Therefore, the matters relating to these combinations and modifications should be construed as being included in the scope of the present invention. Further, although the embodiments have been described above, it is only an example and does not limit the present invention, and those skilled in the art to which the present invention pertains exemplify the above-described contents within a scope not departing from the essential features of the present embodiments. It will be apparent that various modifications and applications are possible which have not yet been made. For example, each component specifically illustrated in the embodiments may be implemented by modification. And differences associated with these modifications and applications should be construed as being included in the scope of the present invention as defined in the appended claims.
Claims (17)
1. An illumination device, comprising:
a substrate;
a reflective layer disposed on the substrate;
a light source passing through the reflective layer and disposed on the substrate;
a resin layer disposed on the reflective layer; and
an optical pattern disposed on the resin layer,
wherein the light source includes a first light emitting device and a second light emitting device spaced apart from the first light emitting device,
wherein the optical pattern includes a first optical pattern disposed on the first light emitting device and a second optical pattern disposed on the second light emitting device, and
wherein the first optical pattern and the second optical pattern have different areas.
2. The illumination apparatus according to claim 1, wherein the first and second optical patterns have a plurality of unit pattern layers having different areas and overlapping each other.
3. The illumination apparatus according to claim 1, wherein an area of the unit pattern layer disposed at the uppermost side of the first optical pattern is greater than an area of the unit pattern layer disposed at the uppermost side of the second optical pattern.
4. The illumination apparatus according to claim 2, wherein an area of an uppermost unit pattern layer among the plurality of unit pattern layers of the first optical pattern is greater than an area of a lowermost unit pattern layer.
5. The lighting device according to any one of claims 1 to 4, wherein the reflective layer comprises a first aperture in which the first light emitting device is disposed and a second aperture in which the second light emitting device is disposed, and
wherein the first aperture is larger than the second aperture.
6. The illumination device of claim 5, wherein a length of the first aperture in a long axis direction is greater than a length of the second aperture in the long axis direction.
7. The illumination device according to any one of claims 1 to 4, wherein a maximum length of the first optical pattern is in a range of 2.4 times to 2.6 times with reference to a long axis length of the first light emitting device, and
wherein a maximum length of the second optical pattern is in a range of 3.6 times to 3.8 times based on a long axis length of the second light emitting device.
8. An illumination device, comprising:
a substrate;
a reflective layer disposed on the substrate;
a light source passing through the reflective layer and disposed on the substrate;
a resin layer disposed on the reflective layer; and
an optical pattern disposed on the resin layer,
wherein the light source includes a first light emitting device and a second light emitting device spaced apart from the first light emitting device,
wherein the first and second light emitting devices include different numbers of LED chips, and
wherein a length of the first light emitting device in a long axis direction and a length of the second light emitting device in the long axis direction are different from each other.
9. The lighting apparatus according to claim 8, wherein the first light emitting device comprises a first lead frame, a second lead frame, and a third lead frame, the second and third lead frames being disposed at both sides of the first lead frame and having the same area as each other, and
wherein the second light emitting device includes a fourth lead frame and a fifth lead frame, and an area of the fifth lead frame is different from an area of the fourth lead frame.
10. The lighting device of claim 9, wherein the first light emitting device comprises: a first body in which the first, second, and third lead frames are bonded to a bottom of the first cavity; and a plurality of LED chips on the first lead frame disposed in the first cavity,
wherein the first cavity is disposed on a front surface of the first body,
wherein the first body includes a first side facing the substrate, and
wherein each of the first, second, and third lead frames includes a bent portion bent toward the first side portion of the first body.
11. The lighting device of claim 9, wherein the second light emitting means comprises: the second body, the fourth lead frame and the fifth lead frame are arranged at the bottom of the second cavity in the second body; at least one LED chip disposed on the fourth lead frame disposed on the bottom of the second cavity; a bonding member bonded between the fourth lead frame and the LED chip; and a first wiring having both ends connected between the bonding member and the fourth lead frame.
12. The lighting device according to claim 11, comprising a second wiring connecting the fifth lead frame with the LED chip of the second light-emitting device, and
wherein the second wiring includes a sub-wiring having multi-level contacts on an upper surface of the fifth lead frame.
13. An illumination device, comprising:
a substrate;
a reflective layer disposed on the substrate;
a light source passing through the reflective layer and disposed on the substrate;
a resin layer disposed on the reflective layer; and
an optical pattern disposed on the resin layer,
wherein the light source includes M first light emitting devices and N second light emitting devices spaced apart from the M first light emitting devices, wherein M is a natural number greater than N,
wherein a length of the first light emitting device in a long axis direction is greater than a length of the second light emitting device in the long axis direction, and
wherein a maximum width of the resin layer overlapped in a long axis direction of the second light emitting device passing through a center of the second light emitting device is in a range of 2 to 2.2 times a length of the first light emitting device in the long axis direction.
14. The lighting apparatus according to claim 13, wherein a maximum width of the resin layer on an upper portion of the second light-emitting device is 2.2 times or less a length of the first light-emitting device in the long axis direction.
15. The lighting device according to claim 13 or 14, wherein the resin layer comprises: a first region having a minimum first width and arranged with a plurality of the first light emitting devices; and a second region having a maximum second width and provided with at least one second light emitting device,
wherein the second width is smaller than the first width, is larger than a length of the second light emitting device in the long axis direction, and is 2.2 times or less a length of the second light emitting device in the long axis direction, and
wherein the second region has the second width and extends from the second light emitting device to a length of at least 5 times a width of a minor axis of the second light emitting device along a light emitting direction of the second light emitting device.
16. The lighting apparatus according to claim 13 or 14, wherein the second light-emitting device is provided at a position closest to a side surface of the resin layer among the first light-emitting device and the second light-emitting device.
17. The illumination device of claim 16, wherein the optical pattern comprises: a first optical pattern overlapping a portion of each of the first light emitting devices in a vertical direction; and a second optical pattern overlapping a portion of the second light emitting device in the vertical direction and
wherein the second optical pattern is disposed closest to a side surface of the resin layer among the first optical pattern and the second optical pattern.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2020-0034332 | 2020-03-20 | ||
| KR1020200034332A KR20210117726A (en) | 2020-03-20 | 2020-03-20 | Ligith emitting moudle and lighting device having thereof |
| PCT/KR2021/003185 WO2021187843A1 (en) | 2020-03-20 | 2021-03-15 | Lighting module and lighting apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115769389A true CN115769389A (en) | 2023-03-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180022855.2A Pending CN115769389A (en) | 2020-03-20 | 2021-03-15 | Lighting module and lighting device |
Country Status (6)
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| US (1) | US20230135095A1 (en) |
| EP (1) | EP4123731A4 (en) |
| JP (1) | JP2023520635A (en) |
| KR (1) | KR20210117726A (en) |
| CN (1) | CN115769389A (en) |
| WO (1) | WO2021187843A1 (en) |
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| JP2004071409A (en) * | 2002-08-07 | 2004-03-04 | Denso Corp | Vehicular lighting fixture and light distribution control method for same |
| US8367945B2 (en) * | 2006-08-16 | 2013-02-05 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
| CN102472914A (en) * | 2009-08-27 | 2012-05-23 | Lg电子株式会社 | Optical assembly, backlight unit and display apparatus thereof |
| EP2470952B1 (en) * | 2009-08-27 | 2016-02-10 | LG Electronics Inc. | Backlight unit and display device |
| KR101148102B1 (en) * | 2010-03-16 | 2012-05-22 | 엘지이노텍 주식회사 | Back light umit within resin layer for light-guide and LCD using the same |
| DK177579B1 (en) * | 2010-04-23 | 2013-10-28 | Martin Professional As | Led light fixture with background lighting |
| KR101692509B1 (en) * | 2010-11-02 | 2017-01-03 | 엘지이노텍 주식회사 | Display Apparatus |
| KR101287493B1 (en) * | 2010-12-23 | 2013-07-18 | 엘지이노텍 주식회사 | Back light umit within resin layer for light-guide and LCD using the same |
| KR101823506B1 (en) * | 2011-06-29 | 2018-01-30 | 엘지이노텍 주식회사 | Light emitting device and light unit having thereof |
| US8858025B2 (en) * | 2012-03-07 | 2014-10-14 | Lg Innotek Co., Ltd. | Lighting device |
| KR101871374B1 (en) * | 2012-04-09 | 2018-06-27 | 엘지이노텍 주식회사 | A light emitting lamp |
| KR101908656B1 (en) * | 2012-04-09 | 2018-10-16 | 엘지이노텍 주식회사 | A light emitting device package |
| KR102005529B1 (en) * | 2012-12-17 | 2019-07-30 | 엘지이노텍 주식회사 | Automobile lamp |
| EP2904603A4 (en) * | 2013-11-04 | 2016-01-20 | Shenzhen Yunyinggu Technology Co Ltd | Subpixel arrangements of displays and method for rendering the same |
| US9184149B2 (en) * | 2014-02-12 | 2015-11-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor device with an interlocking wire bond |
| CN204127877U (en) * | 2014-09-30 | 2015-01-28 | 京东方科技集团股份有限公司 | A kind of reflector plate, backlight module and display unit |
| KR102486035B1 (en) * | 2016-01-28 | 2023-01-06 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | Light emitting device package and light emitting apparatus having the same |
| US10957825B2 (en) * | 2017-09-25 | 2021-03-23 | Lg Innotek Co., Ltd. | Lighting module and lighting apparatus having thereof |
| WO2020098665A1 (en) * | 2018-11-14 | 2020-05-22 | 上海延锋金桥汽车饰件***有限公司 | Vehicle interior trim piece |
-
2020
- 2020-03-20 KR KR1020200034332A patent/KR20210117726A/en unknown
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2021
- 2021-03-15 EP EP21770952.6A patent/EP4123731A4/en active Pending
- 2021-03-15 US US17/912,144 patent/US20230135095A1/en active Pending
- 2021-03-15 JP JP2022555859A patent/JP2023520635A/en active Pending
- 2021-03-15 WO PCT/KR2021/003185 patent/WO2021187843A1/en active Application Filing
- 2021-03-15 CN CN202180022855.2A patent/CN115769389A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2023520635A (en) | 2023-05-18 |
| KR20210117726A (en) | 2021-09-29 |
| US20230135095A1 (en) | 2023-05-04 |
| EP4123731A1 (en) | 2023-01-25 |
| WO2021187843A1 (en) | 2021-09-23 |
| EP4123731A4 (en) | 2024-04-03 |
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